CN104218892A - Multiple-frequency crystal oscillation circuit - Google Patents
Multiple-frequency crystal oscillation circuit Download PDFInfo
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- CN104218892A CN104218892A CN201310223317.7A CN201310223317A CN104218892A CN 104218892 A CN104218892 A CN 104218892A CN 201310223317 A CN201310223317 A CN 201310223317A CN 104218892 A CN104218892 A CN 104218892A
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- pass transistor
- nmos pass
- control circuit
- circuit
- digital control
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Abstract
The invention discloses a multiple-frequency crystal oscillation circuit comprising a numerical control circuit, an amplitude control circuit, an oscillating circuit and an amplifying circuit. The numerical control circuit is used for switching crystal oscillation parameters to meet the requirements of crystal oscillation with different frequencies; the amplitude control circuit is connected to the numerical control circuit and is used for limiting the voltage amplitude of two ends of a crystal; the oscillating circuit is connected to the numerical control circuit and the amplitude control circuit and is used for producing crystal oscillation; the amplifying circuit is connected to the oscillating circuit, is used for allowing the output voltage to implement full swing amplitude oscillation and has the duty ratio meeting the design requirements. The system power consumption can be reduced effectively, and the multiple-frequency crystal oscillation circuit can be reused.
Description
Technical field
The present invention relates to a kind of low-power consumption multi-frequency crystal oscillating circuit.
Background technology
Real-time clock is widely used in many electronic systems, real-time clock as the time reference of system, the requirement of demand fulfillment frequency stability and low-power consumption.
In the time of decades in the past, the geneogenous advantage that crystal oscillator has because of it is widely used in reference clock source.In today that science and technology is developed by leaps and bounds, electronic system is progressively at the future development to portable, low-power consumption, high stability.Traditional crystal oscillating circuit can not meet the requirement of electronic system now due to shortcomings such as area are large, power consumption is large, reusability is low, therefore how to design low-power consumption, high stability, reusable crystal oscillating circuit are the basic problem that high-performance electric subsystem needs to solve.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of multi-frequency crystal oscillating circuit, effectively can reduce the power consumption of system, and oscillating circuit reusable.
For solving the problems of the technologies described above, multi-frequency crystal oscillating circuit of the present invention, comprising:
One digital control circuit, for switching the parameter of crystal oscillation, meets the requirement of different frequency crystal oscillation;
One amplitude control circuit, is connected with described digital control circuit, for limiting the voltage swing at crystal two ends;
One oscillating circuit, is connected with amplitude control circuit with described digital control circuit, produces vibration for making crystal;
One amplifying circuit, is connected with described crystal oscillating circuit, for making output voltage reach the vibration of the full amplitude of oscillation, and has the duty ratio met design requirement.
The present invention adopts negative feedback structure to limit the oscillating circuit both end voltage amplitude of oscillation, effectively reduces the power consumption of system, and has ensured the insensitivity of circuital current to mains voltage variations simultaneously, and then achieve the design object of high-performance crystal oscillating circuit.
Crystal oscillating circuit of the present invention adopts digital control, by making oscillating circuit meet the requirement of different frequency of oscillation to circuit parameter to the switching of control end low and high level, achieves the durability of oscillating circuit; Effectively can reduce area and the cost of the on-chip integration system using multi-frequency crystal oscillating circuit.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is Pierce oscillator circuit and equivalent circuit diagram thereof;
Fig. 2 is amplitude detecting schematic diagram;
Fig. 3 is described multi-frequency crystal oscillating circuit theory diagram;
Fig. 4 is described multi-frequency crystal oscillating circuit one embodiment schematic diagram.
Embodiment
Fig. 1 a is depicted as Pierce oscillator circuit structure chart, and MOS transistor M0 is wherein as amplifying unit, and Fig. 1 b is its ac equivalent circuit figure.Described multi-frequency crystal oscillating circuit adopts Pierce oscillator circuit structure.Condition according to the known circuit oscillation of Barkhausen criterion should meet:
Z
C+Z
M=0 （1）
Solve further and can obtain critical mutual conductance:
G
m=(C
1+C2)
2*(ωC
T)
2/C
1C
2 （2）
Wherein, " * " represents multiplication sign, C
t=C
0+ C
1c
2/ (C
1+ C
2), because circuit will meet the requirement of extremely low power dissipation, so require that devices function is in sub-threshold region, now drain terminal electric current and each terminal voltage have following relation:
I
d=sI
s0e
vg/nVT(e
-VS/VT-e
-VD/VT) （3）
Wherein V
g, V
dand V
sfor the voltage between each end points of MOS transistor M0 and substrate, s is the breadth length ratio of device, I
s0be technique relevant parameter with n, V
t=kT/q.Be not difficult thus to extrapolate mutual conductance:
g
m=I
d/nV
T （4）
Can find out subthreshold region mutual conductance and bias current linear, convolution 2 can calculate critical current very easily.
Through doing Fig. 1 circuit to analyze further, can find out that the drain-source current of MOS transistor M0 includes harmonic component because there is nonlinear effect; Because the Q value of crystal is very large, the feedback voltage of Q1 point, namely the gate voltage of MOS transistor M0 can be similar to and regard sinusoidal wave as, namely
V
G=V
0+V
1COS(ωt)。
Amplitude V
1with critical current I
d0with bias current I
dbthere is following relation:
Wherein, I
b0(x), I
b1(x) be respectively zeroth order and single order correction type Bessel function (modified Bessel function).
Shown in Figure 3, described multi-frequency crystal oscillating circuit, comprising:
One digital control circuit, for switching the parameter of crystal oscillation, meets the requirement of different frequency crystal oscillation.The parameter switching of crystal oscillation completes under the control of outside logic control signal.
One amplitude control circuit, is connected with described digital control circuit, for limiting the voltage swing at crystal two ends; Described amplitude control circuit, by introducing the voltage of crystal one end, produces and controls electric current, forms negative feedback loop the limits crystal both end voltage amplitude of oscillation with this.
One oscillating circuit, is connected with amplitude control circuit with described digital control circuit, produces vibration for making crystal; This oscillating circuit adopts Pierce oscillator circuit structure to make crystal oscillation, and crystal two ends receive grid and the drain electrode of a nmos pass transistor respectively, suitably adjust nmos pass transistor, can make the primary condition meeting vibration.
One amplifying circuit, is connected with described crystal oscillating circuit, for making output voltage reach the vibration of the full amplitude of oscillation, and has the duty ratio met design requirement; By one end of crystal being connected to the input of amplifier, above-mentioned functions can be realized.
The amplitude detecting circuit (this amplitude detecting circuit is arranged in described oscillating circuit) that described multi-frequency crystal oscillating circuit adopts, as shown in Figure 2.
This amplitude detecting circuit comprises a nmos pass transistor M1, the drain electrode of this nmos pass transistor M1 and a current source I
bone end, resistance R1 one end be connected with one end of electric capacity C9.Described current source I
bthe other end connect power voltage terminal.The other end of resistance R1 is connected with one end of electric capacity C8 and as the input Vin of amplitude detecting circuit, the other end of electric capacity C8 is connected with the grid of nmos pass transistor M1, the source electrode of nmos pass transistor M1 and the other end ground connection of electric capacity C9.
The principle of amplitude detecting is the height size of oscillation amplitude being changed into direct voltage.Wherein, large resistance R1 one end is connected to the drain electrode of MOS transistor M1, and the other end is connected with one end of electric capacity C8, and the other end of electric capacity C8 is connected with the grid of MOS transistor M1, makes the quiescent voltage of A, B 2 identical.Oscillator signal, from the input of Vin end, receives the gate terminal of MOS transistor M1 after straight through electric capacity C8.The relation analyzed between the voltage of A, B 2 and amplitude has:
Id=sI
0e
VG/nVT （6）
Because B point does not have other DC channel except MOS transistor M1, therefore the average current of MOS transistor M1 just equals bias current I
bif, VA=V
0+ V
1cOS (ω t), has following formula to set up:
Above formula indicates the direct voltage V of A point
0with amplitude V
1between relation.Because bias current is constant, so when amplitude increases, direct voltage reduces; When amplitude reduces, direct voltage raises.
Consider the voltage of B point again.Because the average current flowing through resistance R1 is zero, and resistance is linear element device, therefore the voltage of B point is exactly the direct voltage V of A point
0.By above analysis, A point voltage changes with the changes in amplitude of input signal, and the voltage detecting A point just can determine the amplitude size of oscillator signal.
The operating current of described oscillating circuit is provided by amplitude control circuit, and the size of operating current is by described amplitude control circuit, hinders (composition graphs 4, see resistance R3) and oscillating circuit determines jointly with its crosstalk.
The basic functional principle of described multi-frequency crystal oscillating circuit is: the frequency according to selected crystal selects suitable gear at digital control circuit, circuit starts to power on, now oscillating circuit exports is zero, and therefore amplitude control circuit exports larger electric current, the rapid starting of oscillation of oscillating circuit.Amplitude increases gradually, and amplitude control circuit decreases output current, and when amplitude reaches set point, the output current of amplitude control circuit no longer reduces, and circuit maintains this state, and amplitude preservation is constant, exports through amplifying circuit.Control amplitude by operating current, the working point of circuit is more stable on the one hand, and after another aspect amplitude is limited, nonlinear impact reduces, and therefore frequency stability is improved.Meanwhile, the stable of working point also makes operating current little with the change of voltage, effectively reduces energy consumption.Utilize amplitude to the feedback mechanism of electric current in addition, circuit can regulate working point automatically according to the change of the parameter of crystal and technique.
Described multi-frequency crystal oscillating circuit is for two kinds of conventional crystal oscillator frequencies: 32.768KHz, 2MHz have done the design of physical circuit, particular circuit configurations as shown in Figure 4, digital control end signal gear1, gear2(external logic control signal) be responsible for choosing of frequency, the concrete respective frequencies of digital control end signal is as shown in table 1.
| gear1 | gear2 | Crystal oscillator frequency |
| 0 | 1 | 32.768KHz |
| 1 | 0 | 2MHz |
Table 1
Described digital control circuit is made up of nmos pass transistor M8, M9, M11, M13, M14 and M15.
The grid of nmos pass transistor M8 is connected with the input of digital control end signal gear1, and the grid of nmos pass transistor M15 is connected with the input of digital control end signal gear2.The drain electrode of nmos pass transistor M8 is connected with the drain electrode of nmos pass transistor M15.
The grid of nmos pass transistor M9 is connected with the input of digital control end signal gear1, and the grid of nmos pass transistor M11 is connected with the input of digital control end signal gear2.The drain electrode of nmos pass transistor M9 is connected with the drain electrode of nmos pass transistor M11.
The grid of nmos pass transistor M13 is connected with the control end gear1b of the signal of digital control end signal gear1 after the first inverter D1 is anti-phase, and the grid of nmos pass transistor M14 is connected with the control end gear2b of the signal of digital control end signal gear2 after the second inverter D2 is anti-phase.The drain electrode of nmos pass transistor M13 is connected with power voltage terminal with the drain electrode of nmos pass transistor M14.
Described amplitude control circuit is made up of nmos pass transistor M3, M4, M10.The grid of nmos pass transistor M3 with M10 is connected with one end of electric capacity C3 with one end of resistance R2.The other end ground connection of electric capacity C3.The other end of resistance R2 is connected with the voltage input end XIN of crystal.The source electrode of nmos pass transistor M3 with M10 is connected with one end of resistance R3, the other end ground connection of resistance R3.
The grid of nmos pass transistor M4 is connected with the drain electrode of nmos pass transistor M11 with the nmos pass transistor M9 in described digital control circuit with source electrode.
Described oscillating circuit is made up of nmos pass transistor M16, M2, M7, M12.
Nmos pass transistor M16 is connected with the voltage input end XIN of crystal with the grid of nmos pass transistor M7.The source ground of nmos pass transistor M7 and nmos pass transistor M16.The drain electrode of nmos pass transistor M7 is connected with the source electrode of the nmos pass transistor M8 in described digital control circuit; The drain electrode of nmos pass transistor M16 is connected with the source electrode of the nmos pass transistor M15 in described digital control circuit.
Nmos pass transistor M12 is connected with the drain electrode of the grid of nmos pass transistor M2 with nmos pass transistor M9, the M11 in described digital control circuit.Nmos pass transistor M12 is connected with the drain electrode of nmos pass transistor M15 with the nmos pass transistor M8 in described digital control circuit with the source electrode of nmos pass transistor M2.The drain electrode of nmos pass transistor M12 is connected with the source electrode of the nmos pass transistor M13 in described digital control circuit.The drain electrode of nmos pass transistor M2 is connected with the source electrode of the nmos pass transistor M14 in described digital control circuit.
Described amplifying circuit is made up of nmos pass transistor M5 and nmos pass transistor M6.
The grid of nmos pass transistor M5 is connected with the drain electrode of nmos pass transistor M11 with the nmos pass transistor M9 in described digital control circuit.The drain electrode of nmos pass transistor M5 is connected with power voltage terminal.The source electrode of nmos pass transistor M5 is connected with the drain electrode of nmos pass transistor M6, and the node of this connection is as the voltage output end CK of described multi-frequency crystal oscillating circuit.The grid of nmos pass transistor M6 is connected with the voltage input end XIN of crystal, the source ground of nmos pass transistor M6.
A resistance R4 is connected between the voltage input end XIN of crystal and voltage output end XOUT.The voltage input end XIN of crystal be connected an electric capacity C5 between ground.The voltage output end XOUT of crystal be connected an electric capacity C4 between ground.
Under two kinds of frequencies of oscillation, electric capacity C5, C4 all choose 10PF.First carefully state for 32.768KHz crystal frequency.Choosing operating voltage is 3.3V, and current-limiting resistance R3 gets 400K Ω, and digital control end signal gear2 is set high level, and digital control end signal gear1 sets low level.Consider that 32.768KHz frequency is lower, power consumption is also relatively little, and the present embodiment gets nmos pass transistor M2 and M4 same ratio size, and the size of nmos pass transistor M3 and M1 should suitably be chosen.If S3/S1(S represents the breadth length ratio of MOS transistor, the sequence number of MOS transistor in " S " numeral Fig. 4 below) too little, the crystal both end voltage amplitude of oscillation may be caused too small, and noise immunity is not enough to external world; If S3/S1 is too large, then the crystal both end voltage amplitude of oscillation can be caused too large, cause the loss in power consumption, also can shorten the crystal life-span itself.So considering that the present embodiment chooses S3/S1 through compromise is 4/1, obtain the crystal both end voltage amplitude of oscillation about about 0.4V.Crystal input terminal voltage can obtain full amplitude of oscillation square-wave signal through the amplification of nmos pass transistor M5.
According to the about used time 400ms of simulation result crystal Induction Peried, why Induction Peried relatively length be that described multi-frequency crystal oscillating circuit only has the electric current of 100nA, that is the about 0.33 μ w of power consumption because Current Control smaller.The amplitude of oscillation of crystal both end voltage is greatly about 0.35V, and voltage output end CK is also rail-to-rail output, duty ratio about 50%.Waveform is steadily smooth, can be used as the supplying party of high precision clock completely.
In order to there be further comparative illustration, do the adjustment in parameter when emulating 2MHz crystal, so that the importance of parameter to crystal oscillator frequency to be described.First digital control end signal gear1 is transferred to high level, digital control end signal gear2 is transferred to low level, the ratio of nmos pass transistor M12 and nmos pass transistor M4 pipe is adjusted to S12/S4 and equals 4/1, increases start-oscillation circuit electric current.Be 4 times of nmos pass transistor M16 pipe simultaneously by the adjusted size of nmos pass transistor M7, make the mutual conductance increase of oscillating tube to meet starting condition for oscillation like this.Can find out that Induction Peried shortens greatly through the post-layout simulation results exhibit that powers on, about used time 100ms, and now the electric current of whole circuit also only has less than 4 μ A, the about 13 μ w of power consumption.The about 0.4V of crystal both end voltage, voltage output end CK export the full amplitude of oscillation of square wave, and duty ratio is also more gratifying.
As can be seen from above simulation result, described multi-frequency crystal oscillating circuit has obvious advantage, is exactly more multi-frequency module integration, in a circuit, effectively can be reduced chip area by digital control extraction the most practical; And due to the effect of amplitude control circuit in circuit, oscillating circuit both end voltage is controlled, make the power consumption of multi-frequency crystal oscillating circuit integrated circuit smaller.
The present invention is applicable to real time clock circuit and other needs the system of high precision reference clock signal.
Above by embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (5)
1. a multi-frequency crystal oscillating circuit, is characterized in that, comprising:
One digital control circuit, for switching the parameter of crystal oscillation, meets the requirement of different frequency crystal oscillation;
One amplitude control circuit, is connected with described digital control circuit, for limiting the voltage swing at crystal two ends;
One oscillating circuit, is connected with amplitude control circuit with described digital control circuit, produces vibration for making crystal;
One amplifying circuit, is connected with described oscillating circuit, for making output voltage reach the vibration of the full amplitude of oscillation, and has the duty ratio met design requirement.
2. multi-frequency crystal oscillating circuit as claimed in claim 1, it is characterized in that: the operating current of described oscillating circuit is provided by amplitude control circuit, and the size of operating current is by described amplitude control circuit, jointly determine with its crosstalk resistance and oscillating circuit.
3. multi-frequency crystal oscillating circuit as claimed in claim 1, it is characterized in that: described multi-frequency crystal oscillating circuit selects suitable gear according to the frequency of selected crystal at digital control circuit, after starting to power on, it is zero that described oscillating circuit exports, amplitude control circuit exports the maximum current of setting, the rapid starting of oscillation of oscillating circuit; Along with amplitude increases gradually, amplitude control circuit decreases output current, when amplitude reaches set point, the output current of amplitude control circuit no longer reduces, described multi-frequency crystal oscillating circuit maintains this state, and amplitude preservation is constant, outputs signal and exports after amplifying circuit amplifies.
4. multi-frequency crystal oscillating circuit as claimed in claim 1, is characterized in that: described oscillating circuit has an amplitude detecting circuit; This amplitude detecting circuit comprises the first nmos pass transistor, and the drain electrode of this first nmos pass transistor is connected with one end of the 9th electric capacity with one end of one end of a current source, the first resistance; The other end of described current source connects power voltage terminal; The other end of the first resistance is connected with one end of the 8th electric capacity and as the input of amplitude detecting circuit, the other end of the 8th electric capacity is connected with the grid of the first nmos pass transistor, the source electrode of the first nmos pass transistor and the other end ground connection of the 9th electric capacity.
5. multi-frequency crystal oscillating circuit as claimed in claim 1, is characterized in that:
Described digital control circuit is made up of the 8th nmos pass transistor, the 9th nmos pass transistor, the 11 nmos pass transistor, the 13 nmos pass transistor, the 14 nmos pass transistor and the 15 nmos pass transistor.
The grid of the 8th nmos pass transistor is connected with the first digital control end, and the grid of the 15 nmos pass transistor is connected with the second digital control end; The drain electrode of the 8th nmos pass transistor is connected with the drain electrode of the 15 nmos pass transistor;
The grid of the 9th nmos pass transistor is connected with the first digital control end, and the grid of the 11 nmos pass transistor is connected with the second digital control end; The drain electrode of the 9th nmos pass transistor is connected with the drain electrode of the 11 nmos pass transistor;
First digital control end is connected with the input of the first inverter, and the grid of the 13 nmos pass transistor M13 is connected with the reversed-phase output of the first inverter; Second digital control end is connected with the input of the second inverter, and the grid of the 14 nmos pass transistor is connected with the reversed-phase output of the second inverter; The drain electrode of the 13 nmos pass transistor is connected with power voltage terminal with the drain electrode of the 14 nmos pass transistor;
Described amplitude control circuit is made up of the 3rd nmos pass transistor, the 4th nmos pass transistor and the tenth nmos pass transistor;
3rd nmos pass transistor is connected with one end with the 3rd electric capacity, one end of the second resistance with the grid of the tenth nmos pass transistor, the other end ground connection of the 3rd electric capacity; The other end of the second resistance is connected with the voltage input end of crystal; 3rd nmos pass transistor is connected with one end of the 3rd resistance with the source electrode of the tenth nmos pass transistor, the other end ground connection of the 3rd resistance;
The grid of the 4th nmos pass transistor is connected with the drain electrode of the 11 nmos pass transistor with the 9th nmos pass transistor in described digital control circuit with source electrode;
Described oscillating circuit is made up of the 16 nmos pass transistor, the second nmos pass transistor, the 7th nmos pass transistor M7 and the tenth bi-NMOS transistor;
16 nmos pass transistor is connected with the voltage input end of crystal with the grid of the 7th nmos pass transistor; The source ground of the 7th nmos pass transistor and the 16 nmos pass transistor; The drain electrode of the 7th nmos pass transistor is connected with the source electrode of the 8th nmos pass transistor in described digital control circuit; The drain electrode of the 16 nmos pass transistor is connected with the source electrode of the 15 nmos pass transistor in described digital control circuit;
Tenth bi-NMOS transistor is connected with the drain electrode of the 11 nmos pass transistor with the 9th nmos pass transistor in described digital control circuit with the grid of the second nmos pass transistor; Tenth bi-NMOS transistor is connected with the drain electrode of the 15 nmos pass transistor with the 8th nmos pass transistor in described digital control circuit with the source electrode of the second nmos pass transistor; The drain electrode of the tenth bi-NMOS transistor is connected with the source electrode of the 13 nmos pass transistor in described digital control circuit; The drain electrode of the second nmos pass transistor is connected with the source electrode of the 14 nmos pass transistor in described digital control circuit;
Described amplifying circuit is made up of the 5th nmos pass transistor and the 6th nmos pass transistor;
The grid of the 5th nmos pass transistor is connected with the drain electrode of the 11 nmos pass transistor with the 9th nmos pass transistor in described digital control circuit; The drain electrode of the 5th nmos pass transistor is connected with power voltage terminal; The source electrode of the 5th nmos pass transistor is connected with the drain electrode of the 6th nmos pass transistor, and the node of this connection is as the voltage output end of described multi-frequency crystal oscillating circuit; The grid of the 6th nmos pass transistor is connected with the voltage input end of crystal, the source ground of the 6th nmos pass transistor;
One the 4th resistance is connected between the voltage input end of crystal and voltage output end; The voltage input end of crystal be connected one the 5th electric capacity between ground; The voltage output end of crystal be connected one the 4th electric capacity between ground.
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|---|---|---|---|
| CN201310223317.7A CN104218892B (en) | 2013-06-05 | 2013-06-05 | Multi-frequency crystal oscillating circuit |
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|---|---|---|---|
| CN201310223317.7A CN104218892B (en) | 2013-06-05 | 2013-06-05 | Multi-frequency crystal oscillating circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374870A (en) * | 2016-08-31 | 2017-02-01 | 兆讯恒达微电子技术(北京)有限公司 | Crystal oscillator |
| CN111130534A (en) * | 2019-12-20 | 2020-05-08 | 钜泉光电科技(上海)股份有限公司 | Buffer circuit and crystal oscillator circuit |
| CN111786634A (en) * | 2020-07-11 | 2020-10-16 | 重庆百瑞互联电子技术有限公司 | Crystal oscillator, oscillation signal generation method, storage medium and equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1698262A (en) * | 2003-03-06 | 2005-11-16 | 松下电器产业株式会社 | Quartz oscillation circuit |
| CN201403090Y (en) * | 2009-01-16 | 2010-02-10 | 环旭电子股份有限公司 | Radio frequency circuit with different switchable oscillation frequencies |
| CN103066942A (en) * | 2012-12-20 | 2013-04-24 | 无锡中科微电子工业技术研究院有限责任公司 | Quick-start crystal oscillator circuit with ultra-low power consumption |
| CN103117725A (en) * | 2012-11-13 | 2013-05-22 | 长沙景嘉微电子股份有限公司 | Crystal oscillator oscillation-starting circuit suitable for multi-frequency crystals |
-
2013
- 2013-06-05 CN CN201310223317.7A patent/CN104218892B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1698262A (en) * | 2003-03-06 | 2005-11-16 | 松下电器产业株式会社 | Quartz oscillation circuit |
| CN201403090Y (en) * | 2009-01-16 | 2010-02-10 | 环旭电子股份有限公司 | Radio frequency circuit with different switchable oscillation frequencies |
| CN103117725A (en) * | 2012-11-13 | 2013-05-22 | 长沙景嘉微电子股份有限公司 | Crystal oscillator oscillation-starting circuit suitable for multi-frequency crystals |
| CN103066942A (en) * | 2012-12-20 | 2013-04-24 | 无锡中科微电子工业技术研究院有限责任公司 | Quick-start crystal oscillator circuit with ultra-low power consumption |
Non-Patent Citations (2)
| Title |
|---|
| 向延钊: "一种带振幅调节的晶体振荡器", 《电子设计工程》 * |
| 雷金监铭: "高精度高性能晶体振荡器电路", 《华中科技大学学报（自然科学版）》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374870A (en) * | 2016-08-31 | 2017-02-01 | 兆讯恒达微电子技术(北京)有限公司 | Crystal oscillator |
| CN106374870B (en) * | 2016-08-31 | 2019-03-05 | 兆讯恒达微电子技术(北京)有限公司 | Crystal oscillator |
| CN111130534A (en) * | 2019-12-20 | 2020-05-08 | 钜泉光电科技(上海)股份有限公司 | Buffer circuit and crystal oscillator circuit |
| CN111130534B (en) * | 2019-12-20 | 2024-03-01 | 钜泉光电科技(上海)股份有限公司 | Buffer circuit and crystal oscillator circuit |
| CN111786634A (en) * | 2020-07-11 | 2020-10-16 | 重庆百瑞互联电子技术有限公司 | Crystal oscillator, oscillation signal generation method, storage medium and equipment |
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| Publication number | Publication date |
|---|---|
| CN104218892B (en) | 2017-06-06 |
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