CN104217919A - Field emission light-emitting device and method thereof - Google Patents
Field emission light-emitting device and method thereof Download PDFInfo
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- CN104217919A CN104217919A CN201410459825.XA CN201410459825A CN104217919A CN 104217919 A CN104217919 A CN 104217919A CN 201410459825 A CN201410459825 A CN 201410459825A CN 104217919 A CN104217919 A CN 104217919A
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- field emission
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- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 30
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000002189 fluorescence spectrum Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- Cold Cathode And The Manufacture (AREA)
- Electron Tubes For Measurement (AREA)
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Abstract
The invention discloses a field emission light-emitting device, which comprises a first substrate, a second substrate, a microchannel plate, a grid layer, an anode layer and a fluorescent layer. The second substrate is arranged opposite to the first substrate. The microchannel plate is arranged between the first substrate and the second substrate. The grid layer is arranged between the first substrate and the micro-channel plate and is provided with a graphene field emission assembly. The anode layer is arranged between the second substrate and the microchannel plate. The fluorescent layer is arranged between the microchannel plate and the anode layer. The graphene is used as a field emission source, so that the initial voltage of a field emission device is reduced; furthermore, by using the microchannel plate as an electron multiplier, the axial electric field of the microchannel plate will cause electrons to collide multiple times with the channel wall as they pass through the microchannel plate, thereby multiplying the number of electrons.
Description
Technical field
The present invention relates to a kind of field emission light-emitting devices and methods therefor, particularly relates to a kind ofly take Graphene as field emission source, and by microchannel plate, increases the field emission light-emitting devices and methods therefor of electric current.
Background technology
Existing electron emission form mainly can be divided into electronic field emission (Electron field emission), thermionic emission (Electron thermionic emission), photoelectron emissions (Photo electron emission) and secondary (Secondary electron emission), and wherein the principle of electronic field emission is comparatively different from other threes.
Wherein, the principle of thermionic emission, photoelectron emissions and secondary all needs to make the internal electron of launching object to obtain heat energy, photon energy and secondary electron energy, it is excited and obtains afterwards larger kinetic energy, to overcome the surperficial energy barrier between object and vacuum.
And, the principle of electronic field emission is to see through extra electric field to change the surperficial energy barrier between object and vacuum, when extra electric field is enough large, can change the distribution of body surface vacuum-energy band, make that it highly reduces, narrowed width, thereby form a thinner surperficial energy barrier, now, the electronics of interior of articles does not just need other energy excitation, just can promote electrons tunnel surface energy barrier, and reach the probability in vacuum.
But, though an emitting module reaction speed is fast, and has advantages of that power consumption is little, but still need could drive by high pressure, therefore, existing emitting module also has the space that needs improvement.
Summary of the invention
Because the problem that above-mentioned prior art exists, object of the present invention is just to provide a kind of field emission light-emitting devices and methods therefor, with solve existing field emission light-emitting device problem to be improved.
According to one of object of the present invention, be to propose a kind of field emission light-emitting device, it comprises first substrate, second substrate, microchannel plate, grid layer, anode layer and fluorescence coating.The relative first substrate configuration of second substrate.Microchannel plate is located between first substrate and second substrate, and has a plurality of electronics channels.Grid layer is located between first substrate and microchannel plate, and has at least one perforate with accommodating Graphene field emitting module.Anode layer is located between second substrate and microchannel plate.Fluorescence coating is located between microchannel plate and anode layer.
Preferably, within a plurality of electronics channels of microchannel plate, wall can metallizing or semi-conducting material.
Preferably, anode layer can be indium-tin oxide electrode layer or indium-zinc oxide electrode layer.
Preferably, fluorescence coating can be applied to fluorescent material on anode layer and form by spin-coating method or thermal transfer.
According to two of object of the present invention, be to propose a kind of field emission light-emitting method, it comprises the following step: provide voltage to give grid layer and anode layer, so that electronics dissociates out from the emitting module of Graphene field; Provide a plurality of electronics channels that electronics is passed through; Via electronics, repeatedly collide a plurality of electronics channels, so that electron amount multiplication; By the continuous impact fluroescence layer of electronics of multiplication, so that fluorescence coating is luminous.
Preferably, field emission light-emitting method also can comprise the following step: metallizing or semi-conducting material are in the inwall of a plurality of electronics channels.
Preferably, anode layer can be indium-tin oxide electrode layer or indium-zinc oxide electrode layer.
Preferably, field emission light-emitting method also can comprise the following step: by spin-coating method or thermal transfer, fluorescent material is applied on anode layer to form fluorescence coating.
In sum, the field emission light-emitting devices and methods therefor that the present invention proposes can be used Graphene as field emission source, to reduce the starting voltage of field emission apparatus; And as electron multiplier, when electronics passes through micro-channel board, the axial electric field of micro-channel board will make electronics multiple impacts channel wall by micro-channel board, and then make electron amount multiplication.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the field emission light-emitting device that proposes of the present invention;
Fig. 2 is the flow chart of the field emission light-emitting method that proposes of the present invention;
Fig. 3 is graphite Raman spectrogram of the present invention;
Fig. 4 is of the present invention emission current figure;
Fig. 5 is Fowler-Nordheim of the present invention (Fu Le-Nuo Dehan) figure;
Fig. 6 is fluorescence spectrum figure of the present invention.
Embodiment
For ease of the effect of understanding technical characterictic of the present invention, content, advantage and reaching; as follows to the detailed description of the invention below in conjunction with drawings and Examples; the accompanying drawing that wherein used is only signal and aid illustration, can not limit the scope of the claims in the present invention protection.
Refer to Fig. 1, it is the schematic diagram of the field emission light-emitting device of the present invention's proposition.As shown in Figure 1, the field emission light-emitting device that the present invention proposes comprises first substrate 11, second substrate 12, microchannel plate 13, grid layer 14, anode layer 15 and fluorescence coating 16.The corresponding first substrate 11 of second substrate 12 configures relatively.Microchannel plate 13 is located between first substrate 11 and second substrate 12, and has a plurality of electronics channels 131.Grid layer 14 is located between first substrate 11 and microchannel plate 13, and has at least one perforate 141 with accommodating Graphene field emitting module 140.Anode layer 15 is located between second substrate 12 and microchannel plate 13.Fluorescence coating 16 is located between microchannel plate 13 and anode layer 15.
Continuous speech, the present invention is usingd Graphene as field emission source, and Graphene itself has the characteristics such as high thermal conductivity coefficient (thermal conductivity), high penetration (transmittance), low-resistivity (Resistivity) and high electron mobility (electron mobility); In addition, in field emission source application, Graphene has larger depth-to-width ratio (aspect ratio) compared to other materials, and therefore, Graphene field emitting module 140 can reduce starting voltage.
Microchannel plate 13 is a kind of special optical fiber modules, is also a kind of electron multiplier, and it has, and volume is little, lightweight, gain advantages of higher; Further, it can make metal or the semi-conducting material of electronics high-speed impact on inwall (passage), and electronic energy is multiplied, and more very it, can reach ten thousand times of above electronics incremental.
More carefully say, on each inwall of microchannel plate 13, scribble a kind of metal that can launch secondary electron or semi-conducting material (as nickel, but not as limit), when microchannel plate 13 has added after certain voltage, will in each passage, produce uniform axial electric field, therefore, can make to enter the low-energy electron of axial electric field and the inwall of micro-channel board 13 collides and produces secondary electron; Then, the secondary electron of generation continues to accelerate and collide inwall by axial electric field, to produce more new secondary electron.Have this known, when transmitting one incident electron is to after in micro-channel board 13, the output of microchannel plate 13 will produce many electronics; In other words, each micro-channel is exactly an electron multiplier.
It is worth mentioning that, anode layer 15 can be indium-tin oxide electrode layer or indium-zinc oxide electrode layer.And fluorescence coating 16 can be applied to fluorescent material on anode layer 15 and form by spin-coating method or thermal transfer.
Although in the process of the aforementioned field emission light-emitting device proposing in explanation the present invention, the concept of field emission light-emitting method of the present invention is also described simultaneously, for ask clear for the purpose of, below separately illustrate flow chart detailed description.
Refer to Fig. 2, it is the flow chart of the field emission light-emitting method that proposes of the present invention.As shown in Figure 2, the field emission light-emitting method that the present invention proposes comprises the following step:
Step S21: metallizing or semi-conducting material are in the inwall of a plurality of electronics channels;
Step S22: fluorescent material is applied on anode layer to form fluorescence coating by spin-coating method or thermal transfer;
Step S23: provide voltage to give grid layer and anode layer, so that electronics dissociates out from the emitting module of Graphene field;
Step S24: provide a plurality of electronics channels that electronics is passed through;
Step S25: repeatedly collide a plurality of electronics channels via electronics, so that electron amount multiplication;
Step S26: by the continuous impact fluroescence layer of electronics of multiplication, so that fluorescence coating is luminous.
Refer to Fig. 3, it is graphite Raman spectrogram of the present invention.As shown in Figure 3, the Raman shift of single-layer graphene and double-layer graphite alkene (Raman shift) is greatly about 1580 cm
1and 2700 cm
1, it is expressed as the crest of G and 2D, and G crest is mainly judgement carbonization structure characteristic, and 2D crest is mainly the number of plies of judgement Graphene, calculates, with I with crest and the G peak intensity of 2D
2D/ I
gresult of calculation as the foundation of the judgement Graphene number of plies.
Refer to Fig. 4 and Fig. 5.Fig. 4 is of the present invention emission current figure; Fig. 5 is Fowler-Nordheim of the present invention (Fu Le-Nuo Dehan) figure.In Fig. 5, Fowler-Nordheim (Fu Le-Nuo Dehan) equation of take verify its measurement to electric current whether be an emission current, and if on the figure of corresponding its result line segment linearity be an emission current, but not leakage current.
Refer to Fig. 6, it is fluorescence spectrum figure of the present invention.As shown in Figure 6, fluorescence spectrum be take green glow as example in the present embodiment, and then, green light fluorescent powder spin coating or heat are needed on glass substrate, while making the fluorescence coating 16 of its formation be subject to electronic impact, produce green fluorescence.
In sum, the field emission light-emitting devices and methods therefor that the present invention proposes can be by Graphene as field emission source, to reduce the starting voltage of field emission apparatus; By micro-channel board, as electron multiplier, when electronics passes through micro-channel board, the axial electric field of micro-channel board will make electronics multiple impacts channel wall, and then make electron amount multiplication.
Take a broad view of above-mentioned, the field emission light-emitting devices and methods therefor that the present invention proposes be for prior art institute can not and, really reached the effect of enhancement, and also the easy full of beard of non-those skilled in the art and, meet the application important document of patent statute, therefore propose patent application in accordance with the law.
Claims (8)
1. a field emission light-emitting device, is characterized in that, described device comprises:
First substrate;
Second substrate, configure relative with described first substrate;
Microchannel plate, is located between described first substrate and described second substrate, and has a plurality of electronics channels;
Grid layer, is located between described first substrate and described microchannel plate, and has at least one perforate with accommodating Graphene field emitting module;
Anode layer, is located between described second substrate and described microchannel plate; And
Fluorescence coating, is located between described microchannel plate and described anode layer.
2. field emission light-emitting device as claimed in claim 1, is characterized in that: described in
Inwall metallizing or the semi-conducting material of described a plurality of electronics channels of micro-channel board.
3. field emission light-emitting device as claimed in claim 1, is characterized in that: described in
Anode layer is indium-tin oxide electrode layer or indium-zinc oxide electrode layer.
4. field emission light-emitting device as claimed in claim 1, is characterized in that: described in
Fluorescence coating is applied to fluorescent material on described anode layer and forms by spin-coating method or thermal transfer.
5. a field emission light-emitting method, is characterized in that, the method comprises the following step:
Step S23, provides voltage to give grid layer and anode layer, so that electronics dissociates out from the emitting module of Graphene field;
Step S24, provides a plurality of electronics channels that electronics is passed through;
Step S25, collides described a plurality of electronics channel repeatedly via electronics, so that electron amount multiplication;
Step S26, by the continuous impact fluroescence layer of electronics of multiplication, so that described fluorescence coating is luminous.
6. field emission light-emitting method as claimed in claim 5, is characterized in that, in step
Before rapid S23, also comprise step S21, metallizing or semi-conducting material are in the inwall of described a plurality of electronics channels.
7. field emission light-emitting method as claimed in claim 5, is characterized in that: described in
Anode layer is indium-tin oxide electrode layer or indium-zinc oxide electrode layer.
8. field emission light-emitting method as claimed in claim 5, is characterized in that, in step
Between rapid S21 and step S23, also comprise step S22, by spin-coating method or thermal transfer, fluorescent material is applied on described anode layer to form described fluorescence coating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103119770 | 2014-06-06 | ||
| TW103119770A TW201546859A (en) | 2014-06-06 | 2014-06-06 | Field emission device and method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104217919A true CN104217919A (en) | 2014-12-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410459825.XA Pending CN104217919A (en) | 2014-06-06 | 2014-09-11 | Field emission light-emitting device and method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN104217919A (en) |
| TW (1) | TW201546859A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409647A (en) * | 2016-12-06 | 2017-02-15 | 北京大学东莞光电研究院 | Ultraviolet cathode ray light source |
| CN107123581A (en) * | 2017-04-07 | 2017-09-01 | 中山大学 | A kind of device and preparation method based on two-dimensional layer material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577133A (en) * | 1983-10-27 | 1986-03-18 | Wilson Ronald E | Flat panel display and method of manufacture |
| US5729244A (en) * | 1995-04-04 | 1998-03-17 | Lockwood; Harry F. | Field emission device with microchannel gain element |
| CN1630015A (en) * | 2003-11-29 | 2005-06-22 | 三星Sdi株式会社 | Electron emission device and method of manufacturing the same |
| US20070131849A1 (en) * | 2005-09-16 | 2007-06-14 | Arradiance, Inc. | Microchannel amplifier with tailored pore resistance |
| CN102929039A (en) * | 2012-11-05 | 2013-02-13 | 福州大学 | Liquid crystal display-field emission display (LCD-FED) double-screen structure high-dynamic display system |
-
2014
- 2014-06-06 TW TW103119770A patent/TW201546859A/en unknown
- 2014-09-11 CN CN201410459825.XA patent/CN104217919A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577133A (en) * | 1983-10-27 | 1986-03-18 | Wilson Ronald E | Flat panel display and method of manufacture |
| US5729244A (en) * | 1995-04-04 | 1998-03-17 | Lockwood; Harry F. | Field emission device with microchannel gain element |
| CN1630015A (en) * | 2003-11-29 | 2005-06-22 | 三星Sdi株式会社 | Electron emission device and method of manufacturing the same |
| US20070131849A1 (en) * | 2005-09-16 | 2007-06-14 | Arradiance, Inc. | Microchannel amplifier with tailored pore resistance |
| CN102929039A (en) * | 2012-11-05 | 2013-02-13 | 福州大学 | Liquid crystal display-field emission display (LCD-FED) double-screen structure high-dynamic display system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409647A (en) * | 2016-12-06 | 2017-02-15 | 北京大学东莞光电研究院 | Ultraviolet cathode ray light source |
| CN107123581A (en) * | 2017-04-07 | 2017-09-01 | 中山大学 | A kind of device and preparation method based on two-dimensional layer material |
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| Publication number | Publication date |
|---|---|
| TW201546859A (en) | 2015-12-16 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141217 |