CN107123581A - A kind of device and preparation method based on two-dimensional layer material - Google Patents
A kind of device and preparation method based on two-dimensional layer material Download PDFInfo
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- CN107123581A CN107123581A CN201710224057.3A CN201710224057A CN107123581A CN 107123581 A CN107123581 A CN 107123581A CN 201710224057 A CN201710224057 A CN 201710224057A CN 107123581 A CN107123581 A CN 107123581A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 11
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- 239000007769 metal material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
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- 239000003960 organic solvent Substances 0.000 claims description 7
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- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
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- 239000010931 gold Substances 0.000 claims description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- KVXHGSVIPDOLBC-UHFFFAOYSA-N selanylidenetungsten Chemical class [Se].[W] KVXHGSVIPDOLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
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- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052797 bismuth Inorganic materials 0.000 claims description 2
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- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 2
- CFJRPNFOLVDFMJ-UHFFFAOYSA-N titanium disulfide Chemical compound S=[Ti]=S CFJRPNFOLVDFMJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000003944 tolyl group Chemical group 0.000 claims description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The present invention discloses a kind of device based on two-dimensional layer material and preparation method thereof, and device is made up of electrode one and electrode two；The electrode one is two-dimensional layer material；The electrode one is supported by accessory, is vacantly put；Gap one is formed between electrode one and electrode two top；The apex area of electrode two is less than the area of the overhanging portion of electrode one；Gap two is formed between the side of the electrode two and the side of accessory；Apply voltage between electrode one and electrode two when device works；The device can realize the low pressure Field Electron Emission of two-dimensional layer material plane end face, can be applied to the micro-nano vacuum triode or photodetector worked under the conditions of low-voltage driving, low vacuum.
Description
Technical field
The present invention relates to electronics and optoelectronic device technology field, two-dimensional layer material is based in particular to one kind
Device and preparation method.
Background technology
Two-dimensional layer material（For example：Graphene, molybdenum disulfide, two tungsten selenides etc.）It is the new Field Electron Emission of a class
Material.Typically lack layer two-dimensional layer material（The atom number of plies is 2-10）Thickness be less than 10nm, its sharp keen edge has strong
Electric-field enhancing effect, is conducive to obtaining low pressure Field Electron Emission.Therefore, the document majority reported utilizes two-dimensional layer material
Sharpened edge realize low pressure Field Electron Emission, and carried out as electron source using attempting.However, two-dimensional layer material side
The crystal structure of edge and the uniformity of characteristic electron are difficult to control to, and the upright two-dimensional layer material stiffness of few layer is poor, and pattern is poor
It is different larger, it is unfavorable for the making of micro-nano vacuum electron device, especially limits it in micro-nano vacuum diode, the pole of micro-nano vacuum three
Application in pipe is attempted.
If low pressure Field Electron Emission effectively can be realized using the planar end of two-dimensional layer material, it would be possible to solve
Above-mentioned problem, promotes application of the two-dimensional layer material in micro-nano vacuum electron device.But, the planar ends of two-dimensional layer material
Face does not possess obvious electric-field enhancing effect；Most of two-dimensional layer material has higher work function or electron affinity, example
Work function such as graphene is that 4.5 eV, the electron affinity of molybdenum disulfide are that 4.2 eV, the electron affinity of two tungsten selenides are
4.06 eV, the electron affinity of black phosphorus are 4.4 eV.Above mentioned problem causes two-dimensional layer material plane end face Field Electron Emission
Efficiency is low, it is difficult to realize low-voltage driving.There is researcher to propose to strengthen scattering in the face of two-dimensional layer material electronicses by internal electric field,
Generation phonon aids in Flied emission；Or thermoelectron concentration in two-dimensional layer material face is increased by Joule heat, induce thermionic emission.
Above two mode significantly reduces the Field Electron Emission cut-in voltage of two-dimensional layer material plane end face；However, interior
The introducing of electric field and Joule heat increases device power consumption.
The content of the invention
Present invention seek to address that two-dimensional layer material plane end face Field Electron Emission characteristic is poor in the prior art, it is difficult to
The problem of being applied in micro-nano device can realize the device of two-dimensional layer material plane end face low pressure Field Electron Emission there is provided a kind of
Part.
Another mesh of the present invention is to provide the preparation method of the above-mentioned device based on two-dimensional layer material.
The above-mentioned purpose of the present invention is achieved by the following technical programs：
A kind of device based on two-dimensional layer material, device is made up of electrode one and electrode two；The electrode one is two-dimensional layer
Material；The electrode one is supported by accessory, is vacantly put；Gap one is formed between electrode one and electrode two top；
The apex area of electrode two is less than the area of the overhanging portion of electrode one；The side of the electrode two and the side of accessory it
Between formed gap two；Apply voltage between electrode one and electrode two when device works.
The width in the gap one between electrode one and electrode two top is 1-100nm；The overhanging portion of electrode one
Area be more than 3 times of the apex area of electrode two；Gap two between the side of the electrode two and the side of accessory
Width be 10-5000 nm.
When device based on two-dimensional layer material is applied to the micro-nano vacuum triode of low-voltage driving, the electrode two applies
Voltage be higher than the electrode one apply voltage；The apex area of electrode two is less than the area of the overhanging portion of electrode one, institute
State between the side of electrode two and the side of accessory formation gap two, make electrode two just to two-dimensional layer material electrodes one
Electron energy level pinning effect is weakened in local positions；Under the induction of the electric field of electrode two, the electronics in electrode one is filled into higher
Energy level simultaneously produces Field Electron Emission；Nanometer gap between electrode one and electrode two top helps to reduce device drive
Voltage, realizes application of the device in the micro-nano vacuum triode of low-voltage driving.
When device based on two-dimensional layer material is applied to photodetector, the voltage that the electrode two applies is higher than described
The voltage that electrode one applies；The apex area of electrode two is less than the area of the overhanging portion of electrode one, the side of the electrode two
Between the side of accessory formed gap two, make electrode two just to the local positions of two-dimensional layer material electrodes one in electronics
Energy level effect is weakened；Under the induction of the electric field of electrode two, the electronics in electrode one is filled into higher energy level；The irradiation of laser
The energy for making the electronics acquisition for being located at high level enough is crossed surface potential barrier and is transmitted into vacuum, and the electronics of transmitting is received by electrode two
Collection forms photoelectric current, realizes the detection to optical signal；Due to smaller positioned at the photon energy needed for the electron emission of high level, make
The cutoff wavelength of the absorption spectrum of two-dimensional layer material electrodes one is elongated, and response wave length scope broadens.
The micro-nano vacuum triode or photoelectricity that device based on two-dimensional layer material is applied to work under the conditions of low vacuum are visited
When surveying device, because the gap one between electrode one and the top of electrode two is 1-100 nm, with the average freedom of electronics in an atmosphere
Journey is suitable, and gas molecule collides to ionize with electronics in device operation causes the probability of device breakdown smaller, makes device
It can be worked under the conditions of low vacuum.
When the voltage that the electrode two applies is higher than the voltage that electrode one applies, two-dimensional layer material electrodes one are can induce
Planar end launching electronics.
Preferably, the two-dimensional layer material electrodes one are graphene, molybdenum disulfide, two tungsten selenides, black phosphorus, graphite oxide
One or more combinations in alkene, silene, tungsten disulfide, titanium disulfide, two selenizing molybdenums, bismuth telluride, antimony telluride, boron nitride
Body.
Preferably, the electrode two is metal material or semi-conducting material；It is described constitute electrode two metal material for molybdenum,
One or more alloys in chromium, copper, gold, titanium, aluminium, nickel；It is described constitute electrode two semi-conducting material for silicon, carborundum,
One or more assemblys in germanium, boron, diamond, zinc oxide, titanium oxide, cupric oxide, tungsten oxide, aluminium nitride, gallium nitride.
Preferably, the accessory is metal material or semi-conducting material or insulating materials；The composition accessory
Metal material be molybdenum, chromium, copper, gold, titanium, aluminium, nickel in one or more alloys；The semiconductor for constituting accessory
Material is one in silicon, carborundum, germanium, boron, diamond, zinc oxide, titanium oxide, cupric oxide, tungsten oxide, aluminium nitride, gallium nitride
Plant or a variety of assemblys；The insulating materials for constituting accessory is silica, silicon nitride, aluminum oxide, ceramics, cloud
One or more assemblys in female, glass.
A kind of preparation method of the device based on two-dimensional layer material, comprises the following steps：
SI. electrode two is made；The radius of curvature or radius at the top of electrode two are 1-25 nm；
SII. the accessory played a supportive role in the outside of the electrode two collection paired electrode one, obtains the first assembly；It is described
The upper surface of accessory is 1-100 nm with the difference in height on the top of electrode two；The side of the electrode two and the side of accessory
The width in the gap two between side is 10-5000 nm；
SIII. two-dimensional layer material is prepared, and in the upper surface adhesive gel band of the two-dimensional layer material, obtains two-dimensional layer material
Material --- adhesive tape combination body；
SIV. by the two-dimensional layer material --- adhesive tape combination body is connected with the top of accessory in first assembly
Connect, two-dimensional layer material is departed from adhesive tape, two-dimensional layer material shelf is on accessory and is suspended on above electrode two, gained
Assembly is the device.
In above-mentioned steps SII, by adjusting the upper surface of the accessory and the difference in height on the top of electrode two, regulation
Scope is 1-100nm；So as to adjust the distance between electrode one and the top of electrode two in the device, adjustable range is 1-
100nm。
In above-mentioned steps SIII, the two-dimensional layer material is by mechanically pulling off, liquid phase is peeled off or chemical vapor deposition
Method be prepared from；In the two-dimensional layer material --- in adhesive tape combination body, the thickness of the two-dimensional layer material is
0.3-50 nm。
Above-mentioned steps SIII is carried out by the following method：
S1. the two-dimensional layer material is positioned on the first substrate；
S2. polystyrene solution is coated in two-dimensional layer material upper surface obtained by S1, natural air drying obtains two-dimensional layer material
Material --- polystyrene assembly；
S3. in two-dimensional layer material obtained by S2 --- the adhesive tape of adherent zone hole on the polystyrene layer of polystyrene assembly,
Using adhesive tape by two-dimensional layer material --- polystyrene assembly departs from the first substrate, obtains the two-dimensional layer material ---
Adhesive tape combination body.
In above-mentioned steps S1, the material for constituting the first substrate is silicon, silica, silicon nitride, aluminum oxide, stone
One or more assemblys in English, copper, iron, stainless steel.
Above-mentioned steps SIV is carried out by the following method：
S11. in two-dimensional layer material obtained by S3 --- polydimethylsiloxanefilm film is adhered in the hole of adhesive tape combination body adhesive tape,
Tear adhesive tape off, obtain the first combination thin slice；The area of polydimethylsiloxanefilm film of the size of described hole with adhering to is suitable；
S12. slide is adhered in the upper surface of the first combination thin slice polydimethylsiloxanefilm film obtained by S11, obtains second group
Close thin slice；Accessory by the two-dimensional layer material of the described second combination thin slice with supporting electrode one in first assembly
Top is connected, and obtains the second assembly；
S13. the second assembly obtained by S12 is heated, departs from slide and polydimethylsiloxanefilm film, and remove polyphenyl second
Alkene, obtained assembly is the device.
Preferably, in the step S13, the polystyrene is dissolved by organic solvent, annealed or plasma quarter
The method of erosion is removed.
When the polystyrene is dissolved by organic solvent, the organic solvent is toluene, ethanol, acetic acid or acetone.
When the polystyrene is removed by annealing, anneal in pressure 10-4Carried out under conditions of Pa, 450 DEG C of temperature,
Annealing time is 90-120min.
Compared with prior art, above-mentioned technical proposal has the advantages that：
The device employs two-dimensional layer material as electrode one, by vacantly putting electrode one, sets electrode one and electrode two
Interval between top, limits the ratio between area and the apex area of electrode two of the overhanging portion of electrode one, and set the side of electrode two
Interval between side and accessory side, improves the Field Electron Emission characteristic of two-dimensional layer material in device, realizes device
Two-dimensional layer material plane end face low pressure Field Electron Emission in part；The device architecture is simple, can be applied to low-voltage driving, low true
The micro-nano vacuum triode or photodetector worked under empty condition.
Brief description of the drawings
Fig. 1 is the structural representation of the device based on two-dimensional layer material described in technical solution of the present invention；
Fig. 2 is the scanning electron microscopy shape appearance figure of the device described in technical solution of the present invention embodiment 1；
Fig. 3 is the preparation flow figure of the device described in technical solution of the present invention embodiment 1；
Fig. 4 is the Field Electron Emission current-voltage characteristic curve of the device described in technical solution of the present invention embodiment 1；
Fig. 5 is Field Electron Emission of the device under 325 nm laser irradiation conditions described in technical solution of the present invention embodiment 2
Current-voltage characteristic curve a and the comparison diagram that lower Field Electron Emission current-voltage characteristic curve b is irradiated without laser；
Wherein, 1- electrodes one, 2- accessories, 3- gaps one, 4- gaps two, 5- electrodes two, 6- insulating barriers, 7- silicon conductive liners
Bottom, 8- silicon substrates, 9- polystyrene layers, 10- adhesive tapes, 11- holes, 12- polydimethylsiloxanefilm films, 13- slides, 14-
Quick heating plate.
Embodiment
Accompanying drawing being given for example only property explanation, it is impossible to be interpreted as the limitation to this patent；It is attached in order to more preferably illustrate the present embodiment
Scheme some parts to have omission, zoom in or out, do not represent the size of practical devices；To those skilled in the art,
Some known features and its explanation may be omitted and will be understood by accompanying drawing.Being given for example only property of position relationship described in accompanying drawing
Explanation, it is impossible to be interpreted as the limitation to this patent.
Embodiment 1
As shown in Figure 1, Figure 2 and Fig. 3（ix）Illustrate a kind of device based on two-dimensional layer material, including electrode 1 and electrode 25；
The electrode 1 is two-dimensional layer material molybdenum disulfide；The electrode 1 is supported by accessory 2, is vacantly put, described auxiliary
Part 2 is helped to be made by chromium material；The accessory 2 is supported by insulating barrier 6；The electrode 25 is bored for silicon tip, with silicon conductive liner
Bottom 7 is integrated, and its top radius of curvature is 1-25 nm, in the present embodiment specially 10nm；The suspending part of electrode 1
Point area be more than 3 times of the apex area of electrode 25, in the present embodiment specially 104Times；The side of electrode 25
The width of gap 24 formed between side and the side of accessory 2 is 10-5000 nm, in the present embodiment specially 1000 nm；
Gap 1 is formed between the electrode 1 and electrode 22, the width in gap 1 is 1-100 nm, in the present embodiment specifically
For 30nm；Apply voltage between electrode 1 and silicon tip cone electrode 22 when device works.Above-mentioned device architecture can realize two-dimensional layer
The low pressure Field Electron Emission of shape material plane end face, can be applied to the micro-nano vacuum worked under low-voltage driving, low vacuum environment
Triode or photodetector.
The above-mentioned device based on two-dimensional layer material is in the micro-nano vacuum triode applied to low-voltage driving, the electrode
25 voltages applied are higher than the voltage that the electrode 1 applies；The area of the overhanging portion of electrode 1 is the electrode 25
The 10 of apex area4Times, the width of gap 24 of the side of electrode 25 and the side of accessory 2 is 1000 nm, makes electrode two
5 just to the local positions of electrode 1 in electron energy level pinning effect weaken；Under the induction of the electric field of electrode 25, in electrode 1
Electronics is filled into higher energy level and produces efficient Field Electron Emission；Seam between the top of electrode 1 and electrode 25
Gap 1 helps to reduce the Field Electron Emission driving voltage of the planar end of electrode 1.
The above-mentioned device based on two-dimensional layer material is when applied to photodetector, the voltage that the electrode 25 applies
The voltage applied higher than the electrode 1；The area of the overhanging portion of electrode 1 is the 10 of the apex area of electrode 254
Times, the width of gap 24 of the side of electrode 25 and the side of accessory 2 is 1000 nm, make electrode 25 just to electrode one
Electron energy level pinning effect is weakened in 1 local positions；Under the induction of the electric field of electrode 25, the electronics in electrode 1 is filled into higher
Energy level；The energy that the irradiation of laser makes the electronics acquisition for being located at high level enough is crossed surface potential barrier and is transmitted into vacuum, sends out
The electronics penetrated is collected by electrode 25 and forms photoelectric current, realizes the detection to optical signal；By the electron emission institute positioned at high level
The photon energy needed is smaller, makes that the cutoff wavelength of electrode 1 is elongated, and response wave length scope broadens.
The above-mentioned device based on two-dimensional layer material is applied to the micro-nano vacuum triode or light worked under the conditions of low vacuum
During electric explorer, due to the gap 1 between electrode 1 and the top of electrode 25 width and electronics in an atmosphere it is average from
Suitable by journey, gas molecule collides to ionize with electronics in device operation causes the probability of device breakdown smaller, makes device
Part can be operated under the conditions of low vacuum.
As shown in figure 3, the above-mentioned device based on two-dimensional layer material is prepared by the following method and formed：
Si. such as Fig. 3（i）It is shown, silicon tip cone is prepared in silicon conductive substrates 7 by the use of micro-nano technology technique and is used as electrode 25；It is described
Silicon tip cone height is 100-1000nm, and top radius of curvature is 1-25nm；In the present embodiment, the silicon tip cone height is specially
1000 nm, top radius of curvature is specially 10 nm；
Sii. such as Fig. 3（ii）It is shown, prepared using micro-nano technology technique in the silicon conductive substrates 7 in the outside of electrode described in Si 25
Insulating barrier 6, prepares accessory 2 on insulating barrier 6, obtains the first assembly；The upper surface of accessory 2 and electrode 25
The difference in height on top is 1-100nm；In the present embodiment, the difference in height is specially 30 nm；The side of electrode 25 with it is auxiliary
The width of gap 24 for helping the side of part 2 is 10-5000 nm；In the present embodiment, the width of gap 24 is specially 1000
nm；
Siii. such as Fig. 3（iii）It is shown, two-dimensional layer material molybdenum disulfide electrode 1 is prepared using the method for mechanical stripping and put down
It is laid on silicon substrate 8；The thickness of the electrode 1 is 0.3-50nm；In the present embodiment, the thickness of the electrode 1 is specific
For 2.55nm；Above-mentioned electrode 1 can also be peeled off by liquid phase or the method for chemical vapor deposition is prepared from；Above-mentioned silicon substrate 8
Surface is covered with 300 nm silicon dioxide layers；Above-mentioned silicon substrate 8 also can select silica, silicon nitride, aluminum oxide, quartz, copper,
Iron, stainless steel or glass are substituted；
Siv. such as Fig. 3（iv）It is shown, coat polystyrene solution 9, natural air drying on the surface of silicon substrate 8 for being attached with electrode 1
35-45s；The solvent of the polystyrene solution 9 is toluene, and the ratio between solute and solvent quality are 1:10；
Sv. such as Fig. 3（v）It is shown, using the adhesive tape 10 with hole 11 by the polystyrene layer 9 and electrode 1 from silicon substrate 8
Sur-face peeling；The adhesive tape 10 adheres to the surface of polystyrene layer 9, obtains electrode 1 --- the assembly of adhesive tape 10；
Svi. such as Fig. 3（vi）It is shown, in the electrode 1 --- adhere to polydimethylsiloxanes in the hole 11 of the assembly of adhesive tape 10
Alkane film 12, tears adhesive tape 10 off, obtains the first combination thin slice；The size of described hole 11 and the dimethyl silicone polymer adhered to are thin
Film 12 is suitable；
Svii. such as Fig. 3（vii）It is shown, quick heating plate 14 is placed on optical microscope stage surface, described first is combined
Body is fixed in quick heating plate 14；Described first polydimethylsiloxanefilm film 12 combined on thin slice is fixed on micron step
Enter on the slide 13 of device, by adjusting micron step device and optical microscope stage, make the aligning electrodes two of electrode 1
5；The position of slide 13 is moved down, electrode 1 is connected with the top of accessory 2, obtains the second assembly；
Sviii. such as Fig. 3（viii）With（ix）It is shown, second assembly is heated to 120 DEG C using quick heating plate 14, and protect
Constant temperature 2min is held, polystyrene layer 9 softens；Slide 13 is raised by the micron step device, slide is attached to
Polydimethylsiloxanefilm film 12 on 13 is separated with polystyrene layer 9；Polystyrene layer 9, gained are removed using toluene dissolving
Assembly is the device.
In above-mentioned steps Sii, by adjusting the difference in height of the upper surface of accessory 2 and the top of electrode 25, regulation
Scope is 1-100nm；So as to adjust the distance between electrode 1 and the top of electrode 25 in the device, adjustable range is 1-
100nm；In the present embodiment, the difference in height of the upper surface of accessory 2 and the top of electrode 25 is specially 30 nm, so that solid
It is 30 nm to determine the distance between electrode 1 described in device and the top of electrode 25.
In above-mentioned steps Sviii, the organic solvent that the dissolving removes polystyrene layer 9 can also select ethanol, second
Acid or acetone.
Except being dissolved by organic solvent, above-mentioned polystyrene layer 9 also can be using annealing or the method for plasma etching
Remove；When the polystyrene is removed by annealing, anneal in pressure 10-4Carry out, move back under conditions of Pa, 450 DEG C of temperature
The fiery time is 90-120min.
Embodiment 2
In addition to the method for preparing the vacuum electron device is different, other conditions be the same as Example 1；
The vacuum electron device, which is prepared by the following method, to be formed：
S1. silicon tip cone is prepared in silicon conductive substrates 7 by the use of micro-nano technology technique and is used as electrode 25；The silicon tip cone height is
100-1000nm, top radius of curvature is 1-25nm；In the present embodiment, the silicon tip cone height is specially 1000 nm, top
Radius of curvature is specially 10 nm；
S2. insulating barrier 6 is prepared in the silicon conductive substrates 7 in the above-mentioned outside of electrode 25 using micro-nano technology technique, in insulating barrier 6
Top prepares accessory 2, obtains the first assembly；The difference in height on the upper surface of accessory 2 and the top of electrode 25 is 1-
100nm；In the present embodiment, the difference in height is specially 30 nm；The gap of the side of electrode 25 and the side of accessory 2
24 width are 10-5000 nm；In the present embodiment, the width of gap 24 is specially 1000 nm；
S3. molybdenum disulfide thin slice is prepared using chemical gaseous phase depositing process, the thickness of the molybdenum disulfide thin slice is 100-300 μ
m；
S4. peeled off using 10 pairs of molybdenum disulfide thin slices of adhesive tape, obtain electrode 1 --- the assembly of adhesive tape 10；Institute
State electrode 1 --- in the assembly of adhesive tape 10, the thickness of the electrode 1 is 0.3 nm-50 nm；In the present embodiment, it is described
The thickness of electrode 1 is specially 50 nm；
S5. by the electrode 1 --- the assembly of adhesive tape 10 is directed at the electrode 25 in the first assembly, adheres to the first combination
The top of accessory 2 of body；Stripping tape, electrode 1 is connected with the top of accessory 2, and gained assembly is the device.
Experiment
The Field Electron Emission characteristic of device described in testing example 1, draws current-voltage characteristic curve as shown in Figure 4；
Test result shows that, when the voltage between electrode 25 and electrode 1 is 6 V, the emission current of electrode 1 is 25 pA；Work as electricity
When voltage between pole 25 and electrode 1 is 7.5 V, the emission current of electrode 1 is 50 pA；When electrode 25 and electrode 1 it
Between voltage be 9 V when, the emission current of electrode 1 be 100 pA；Illustrate that the device can realize low-voltage driving.
Using the device described in embodiment 2, tested being irradiated without laser with the laser irradiation conditions that wavelength is 325 nm
Its Field Electron Emission characteristic, draws current-voltage characteristic curve as shown in Figure 5, as illustrated, a lines be device in 325nm
Laser irradiation conditions under test device obtained by Field Electron Emission current-voltage characteristic curve, b lines be device without swash
The Field Electron Emission current-voltage characteristic curve tested under light radiation parameter obtained by device, from fig. 5, it can be seen that when electricity
When voltage between pole 25 and electrode 1 is 12 V, under without laser irradiation conditions, the emission current of electrode 1 is 100 pA,
In wavelength under 325 nm laser irradiation, the emission current of electrode 1 is 120 pA, and emission current gain is 20%, illustrates this
Device generates obvious optical response signal, can be applied to the photodetector of low-voltage driving.
Comparative example 1
Preparation method be the same as Example 1, unlike：The radius of curvature on the top of electrode 25 is 100 nm；The electrode 1
The area of overhanging portion is 2 times of the apex area of electrode 25.It is prepared for being based on two-dimensional layer material using the method for this comparative example
The vacuum electron device of molybdenum disulfide.
The Field Electron Emission characteristic of the device of this comparative example preparation is tested, is as a result shown, when electrode 25 and electrode 1
Between voltage be 50 V when, the emission current of electrode 1 be 25 pA；The device prepared with embodiment 1 is compared, and obtains identical
Emission current 25pA, the driving voltage needed for device prepared by this comparative example has been higher by 44 V than device prepared by embodiment 1, says
Device prepared by bright comparative example can not realize the low pressure Field Electron Emission of two-dimensional layer material molybdenum disulfide plane.
Claims (10)
1. a kind of device based on two-dimensional layer material, device is made up of electrode one and electrode two；The electrode one is two-dimensional layer
Shape material；The electrode one is supported by accessory, is vacantly put；Gap is formed between electrode one and electrode two top
One；The apex area of electrode two is less than the area of the overhanging portion of electrode one；The side of the electrode two and the side of accessory
Gap two is formed between side；Apply voltage between electrode one and electrode two when device works.
2. the device according to claim 1 based on two-dimensional layer material, it is characterised in that the electrode one and electrode two
The width in the gap one between top is 1-100nm.
3. the device according to claim 1 based on two-dimensional layer material, it is characterised in that the overhanging portion of electrode one
Area be more than 3 times of the apex area of electrode two.
4. the device according to claim 1 based on two-dimensional layer material, it is characterised in that the side of the electrode two with
The width in the gap two between the side of accessory is 10-5000 nm.
5. the device according to claim 1 based on two-dimensional layer material, it is characterised in that the two-dimensional layer material is thick
Spend for 0.3-50 nm.
6. the device according to claim 1 based on two-dimensional layer material, it is characterised in that the two-dimensional layer material is
Graphene, molybdenum disulfide, two tungsten selenides, black phosphorus, graphene oxide, silene, tungsten disulfide, titanium disulfide, two selenizing molybdenums, telluride
One or more assemblys in bismuth, antimony telluride, boron nitride；
The electrode two is metal material or semi-conducting material；Constitute electrode two metal material for molybdenum, chromium, copper, gold, titanium, aluminium,
One or more assemblys in nickel；The semi-conducting material for constituting electrode two is silicon, carborundum, germanium, boron, diamond, oxidation
One or more assemblys in zinc, titanium oxide, cupric oxide, tungsten oxide, aluminium nitride, gallium nitride；
The accessory is metal material or semi-conducting material or insulating materials；Constitute accessory metal material for molybdenum,
One or more assemblys in chromium, copper, gold, titanium, aluminium, nickel；Constitute accessory semi-conducting material for silicon, carborundum,
One or more assemblys in germanium, boron, diamond, zinc oxide, titanium oxide, cupric oxide, tungsten oxide, aluminium nitride, gallium nitride；
The insulating materials of composition accessory is one or more in silica, silicon nitride, aluminum oxide, ceramics, mica, glass
Assembly.
7. a kind of preparation method of the device based on two-dimensional layer material, it is characterised in that comprise the following steps：
SI. electrode two is made；The radius of curvature or radius on the top of electrode two are 1-25 nm；
SII. the accessory played a supportive role in the outside of the electrode two collection paired electrode one, obtains the first assembly；It is described
The upper surface of accessory is 1-100 nm with the difference in height on the top of electrode two；The side of the electrode two and the side of accessory
The width in the gap two between side is 10-5000 nm；
SIII. two-dimensional layer material is prepared, and in the upper surface adhesive gel band of the two-dimensional layer material, obtains two-dimensional layer material
Material --- adhesive tape combination body；In the two-dimensional layer material --- in adhesive tape combination body, the thickness of the two-dimensional layer material is
0.3-50 nm；
SIV. by the two-dimensional layer material --- adhesive tape combination body is connected with the top of accessory in first assembly
Connect, two-dimensional layer material is departed from adhesive tape, two-dimensional layer material shelf is on accessory and is suspended on above electrode two, gained
Assembly is the device.
8. the preparation method of device according to claim 7, it is characterised in that：The step SIII also comprises the following steps：
S1. the two-dimensional layer material is positioned on the first substrate；
S2. polystyrene solution is coated in two-dimensional layer material upper surface obtained by S1, natural air drying obtains two-dimensional layer material
Material --- polystyrene assembly；
S3. in two-dimensional layer material obtained by S2 --- the adhesive tape of adherent zone hole on the polystyrene layer of polystyrene assembly,
Using adhesive tape by two-dimensional layer material --- polystyrene assembly departs from the first substrate, obtains the two-dimensional layer material ---
Adhesive tape combination body.
9. the preparation method of device according to claim 7, it is characterised in that：The step SIV also comprises the following steps：
S11. in two-dimensional layer material obtained by S3 --- polydimethylsiloxanefilm film is adhered in the hole of adhesive tape combination body adhesive tape,
After tear adhesive tape off, obtain the first combination thin slice；
S12. slide is adhered in the upper surface of the polydimethylsiloxanefilm film of the first combination thin slice obtained by S11, obtains second
Combine thin slice；The accessory top of electrode one will be supported in the two-dimensional layer material and the first assembly of described second combination thin slice
Portion is connected, and obtains the second assembly；
S13. the second assembly obtained by S12 is heated, departs from slide and polydimethylsiloxanefilm film, and remove polyphenyl second
Alkene, gained assembly is the device.
10. the preparation method of device according to claim 9, it is characterised in that：In the step S13, the polyphenyl
Ethene dissolved by organic solvent, anneal or the method for plasma etching is removed；The organic solvent is toluene, ethanol, second
Acid or acetone；The annealing is in pressure 10-4Carried out under conditions of Pa, 450 DEG C of temperature, annealing time is 90-120min.
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