CN104215326B - Luminous power measurement method of parameters based on crystal resonator and device - Google Patents
Luminous power measurement method of parameters based on crystal resonator and device Download PDFInfo
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- CN104215326B CN104215326B CN201310217262.9A CN201310217262A CN104215326B CN 104215326 B CN104215326 B CN 104215326B CN 201310217262 A CN201310217262 A CN 201310217262A CN 104215326 B CN104215326 B CN 104215326B
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Abstract
The invention discloses a kind of luminous power measurement method of parameters based on crystal resonator and device, including crystal resonator, start-oscillation circuit and frequency measurement unit, the input of start-oscillation circuit is connected with the electrode of crystal resonator, the outfan of start-oscillation circuit electrically connects with frequency measurement unit, and light beam to be measured is incident on the work surface of crystal resonator；Incident laser height is reflected by the measuring method of the present invention and device in the application, reduce the requirement that measurement system is born laser irradiation ability, can be used for going out superlaser parameter measurement under optical condition for a long time, in force the power of laser is converted to frequency measurement, utilize certainty of measurement and resolution high that modem frequency measurement technology has, make it can meet the measurement of laser parameter under the conditions of different capacity, the suitability is strong, dynamic range Datong District time there is the features such as compact conformation, through engineering approaches are simple.
Description
Technical field
The present invention relates to measuring method and the device of a kind of luminous power parameter, particularly relate to a kind of base
Superlaser power parameter measuring method and device in crystal resonator.
Background technology
High-energy laser refers to that mean power is more than myriawatt, and the persistent period reaches the several seconds more than,
Output energy laser instrument more than tens thousand of joules, before having important industry and Military Application
Scape.The measuring method of superlaser power is mainly photodetection method at present, is existed by laser light incident
The attenuation units such as integrating sphere, optical attenuation sheet are incident to photodetection after carrying out big multiple light intensity attenuation
Device surface, by measuring output signal and attenuation factor value, obtains the performance number of laser.This
Method there is problems of, and needs to carry out big multiple light intensity for high energy and high power laser light and declines
Subtract, it is therefore desirable to the attenuation quotient of attenuator is carried out Accurate Calibration, has resulted in bigger
Uncertainty of measurement.
The method measuring energy measurement of high energy laser parameter based on optical pressure principle disclosed in August, 2011
With device (Application No. 201110233271.8), disclose one and utilize light pressure measurement laser
The method of power, by laser light incident to the reflecting mirror fixed by deformed rod, is existed by reflecting mirror
Multiple measurement point displacements of light pressure, are calculated power and the energy parameter of laser.The method
That to there is the displacement signal that optical pressure causes in the application weak, thus to the precision of displacement transducer and
Resolution proposes higher requirement, limits the application of the method.
Summary of the invention
Instant invention overcomes and photoelectric method laser parameter measurement needs laser power carries out big times
Number decay, and requirement high-precision to displacement transducer in light platen press laser parameter measurement, carry
Measuring method and device for a kind of luminous power parameter based on crystal resonator.
The solution technical scheme of the present invention is:
A kind of luminous power measurement method of parameters based on crystal resonator, comprises the following steps:
[1] crystal resonator starting of oscillation, measures resonant frequency background values f0；
[2] the demarcation light beam of the stable output that power is p1 is incident to crystal resonator work
Face, measures the peak value f1 obtaining resonant frequency；
[3] light beam to be measured is incident to the work surface of crystal resonator, measures and obtains resonant frequency
The peak value f of value；
[4] luminous power of light beam to be measured is:
P=p1 (f-f0)/(f1-f0), wherein p is the luminous power of light beam to be measured.
A kind of luminous power parameter measuring apparatus based on crystal resonator, including crystal resonator,
Start-oscillation circuit and frequency measurement unit, the electrode phase of the input of start-oscillation circuit and crystal resonator
Even, the outfan of start-oscillation circuit electrically connects with frequency measurement unit, and light beam to be measured is incident on crystalline substance
The work surface of body resonator.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, the work of crystal resonator
The Dielectric High Reflective Films treating the reflection of measuring beam height it is coated with as face.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, Dielectric High Reflective Films
Reflectance is more than 99%.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, crystal resonator is stone
English crystal oscillator.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, the resonance of quartz crystal oscillator
Frequency is 1～20MHz.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, quartz crystal oscillator work surface
Yardstick be 5～50mm.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, quartz crystal oscillator is AT
Cut type.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, the electricity of crystal resonator
The junction point of extremely anchor type electrode, described electrode and start-oscillation circuit is arranged on the back side of work surface.
In above-mentioned luminous power parameter measuring apparatus based on crystal resonator, light beam is that power is more than
The laser beam of 10mW.
The device have the advantages that as follows:
1, incident laser height is reflected by measuring method and the device of the present invention in the application, reduces
Measurement system is born the requirement of laser irradiation ability, can be used for going out for a long time under optical condition high
Can laser parameter measurement；
2, measuring method and the device of the present invention can realize to laser beam on-line monitoring simultaneously,
Less to elementary beam disturbance, follow-up light beam can continue on for other laser parameter measurements and effect is real
Test, improve experiment efficiency-cost ratio；
3, the power of laser is converted to frequency measurement by measuring method and the device of the present invention, utilizes
Modem frequency measures certainty of measurement and the resolution high that technology has so that it is can meet difference
The measurement of laser parameter under power condition, the suitability is strong, dynamic range Datong District time have compact conformation,
The features such as through engineering approaches is simple；
4, the present invention is coated with the reflection of measuring beam height at the work surface of conventional crystal resonator
Dielectric High Reflective Films, further increases improve of system and bears laser irradiation ability；
5, except measuring in addition to luminous power, the present invention measures system and can also measure when obtaining light
Between, thus it is calculated the energy value of light beam.
Accompanying drawing explanation
Fig. 1 is present invention luminous power based on crystal resonator parameter measuring apparatus schematic diagram；
Fig. 2 is the Mao Xing electrode lay-out schematic diagram at the quartz-crystal resonator back side；
Fig. 3 is frequency change amplitude (the plated film crystalline substance of crystal resonator under different capacity Laser shock loading
Shake)；
Fig. 4 is the laser power and crystal oscillator frequency corresponding relation (plated film obtained according to Fig. 3 result
Crystal oscillator)；
Fig. 5 is corresponding relation (the plated film crystalline substance of Laser shock loading duration and crystal oscillator frequency impulse waveform
Shake)；
Fig. 6 is crystal oscillator frequency change waveform (non-plated film crystal oscillator) obtained under Laser shock loading.
Wherein 1-light source；2-light beam；3-crystal resonator；4-start-oscillation circuit；5-frequency is surveyed
Amount unit；21-work surface；22-quartz crystal；The electrode connection points of 23-work surface；
The electrode connection points at the 24-back side；The circular central region of 25-backplate.
Detailed description of the invention
Below as a example by common quartz-crystal resonator, introduce the measuring principle of the present invention.
Quartz-crystal resonator is called for short crystal oscillator, is coated with by quartz wafer with at front wafer surface, the back side
Electrode forms, and electrode uses the material such as gold, silver, copper, and its diameter thickness ratio is more than under normal circumstances
40, so can greatly suppress the coupling of non-ground state pattern, improve the job stability of system,
The diameter 25.4mm of the most common crystal oscillator, thickness is only 0.3mm.
When wafer is applied compression stress or tensile force, due to piezoelectric effect, crystal deforms upon pole
Change and on electrode, produce the positive and negative electric charge of equivalent；If crystal being accessed stable from exciting
Swinging in circuit so that it is constitute frequency-selecting element, the frequency of oscillation of circuit is equal to the resonant frequency of crystal,
By measuring the change of resonant frequency, then can reflect the amplitude of applied external force on crystal.
Quartz crystal includes X-axis, Y-axis and Z axis according to crystal structure, wherein during X-axis stress,
Piezoelectric effect is the most obvious, therefore X-axis claims electric axis；When X axis is by External Electrical Field, Y-axis
Deformation be that its inverse piezoelectric effect is the most obvious, therefore Y-axis is referred to as mechanical axis；Z axis is then optical axis.
The working method of quartz-crystal resonator mainly has thickness direction scissoring vibration, bending scissoring vibration
Extensional vibration etc. along its length, and measured physical parameter is converted to the frequency of crystal
Rate, is widely used in the parameter measurements such as stress, strain, acceleration, micro-quality.
In quartz crystal inverse piezoelectric effect measures physical parameter, the cut type of crystal and temperature are to shaking
The resonant frequency swinging device has large effect, therefore needs to select suitable cut type in the application, will
Quartz crystal cuts into required having and determines that the wafer in orientation, common quartzy cut type have
AT cuts, BT cuts, FC cuts and cuts with SC.Apply wider micro-mass balance QCM(Quartz at present
Crystal microbalance) it is namely based on thickness-shear vibration model, cut frequently with AT
Type so that it is within the scope of wider temperature, frequency of oscillation minimum with the skew of temperature.Theoretical meter
Calculate show the quartz crystal oscillator of AT cut type in the range of room temperature, ambient temperature often changes 1 DEG C, brilliant
The resonant frequency of body is changed to the 0.41 × 10 of fundamental frequency-9Times, the most negligible.
When high power light beam is loaded onto crystal oscillator surface, although the electrode of plane of crystal is by major part
Light beam reflects, but still having a small amount of light is heat, owing to wafer is the thinnest, thermal capacitance by sorption enhanced
The least, i.e. the inside of wafer produce transient thermal effect, cause the density of crystal, dielectric constant,
The isoparametric change of coefficient of elasticity, causes the dynamic change of crystals stress field, therefore is similar to
Crystal is applied with external force, thus causes the change of resonant frequency of a crystal.And by us
Experiment, find that the change of this frequency and the luminous power loaded and time keep good linear pass
System, thus by measure resonant frequency of crystal oscillator change, it is possible to achieve the measurement of luminous power parameter and
Characterize.
The present invention proposes a kind of luminous power measurement method of parameters based on crystal resonator, including
Following steps:
[1] crystal resonator starting of oscillation, measures resonant frequency background values f0.
[2] the demarcation light beam that stable output is p1 is incident to crystal resonator work
Face, measures the peak value f1 obtaining resonant frequency.
[3] light beam to be measured is incident to the work surface of crystal resonator, measures and obtains resonant frequency
Peak value f.
[4] luminous power p=p1 (f-f0)/(f1-f0) of light beam to be measured is calculated according to formula.
So utilize the linear relationship of the change of luminous power and resonant frequency of crystal oscillator, can be by mark
The measurement system reserved, measures the light beam power value obtaining unknown parameter.
As it is shown in figure 1, the luminous power parameter measuring apparatus bag based on crystal resonator of the present invention
Include crystal resonator 3, start-oscillation circuit 4 and frequency measurement unit 5, the input of start-oscillation circuit 4
End is connected with the electrode of crystal resonator 3, the outfan of start-oscillation circuit 4 and frequency measurement unit
5 electrical connections, light beam 2 to be measured is incident on the work surface 21 of crystal resonator 3, by measuring
Crystal resonator 3 is the change of frequency before and after light beam loads, and is calculated the value of luminous power.Quilt
The preferred power of light beam the measured laser beam more than 10mW.Wherein preferred crystal resonator 3 is
The quartz crystal oscillator of AT cut type, resonant frequency is 1～20MHz.
Quartz crystal oscillator is generally made up of circular quartz crystal 22 and electrode, and electrode is arranged in
Two faces of quartz crystal 22, and realize crystalline substance by the start-oscillation circuit 4 being connected with electrode
The resonance of body.The size of the work surface 21 bearing laser irradiation in quartz crystal oscillator of the present invention is
Φ 5～50mm, whole work surface is fully electroplated with metal electrode, and the back side of work surface is disposed with
Anchor type electrode, as shown in Figure 2.In figure, circular central region 25 is resonant operational district, with work
The electrode making face 21 produces resonance together.The junction point 23,24 of start-oscillation circuit is arranged at
The back side of crystal oscillator, wherein the electrode of work surface 21 is also introduced into the back side by the side of wafer
Electrode connection points 23, and be connected with start-oscillation circuit 4, so it is carried in work surface when laser beam
When 21, circuit connection does not affect measurement.
In order to improve the scope that can measure power further, the work surface 21 of crystal resonator plates
Having the Dielectric High Reflective Films treating the reflection of measuring beam height, the reflectance of Dielectric High Reflective Films is general
More than 99%.
Apparatus of the present invention are given below for the experimental result that laser power parameters is measured, by known
The wavelength of power is that the high power laser of 1064nm is incident to measurement apparatus as shown in Figure 1,
The frequency change of record crystal oscillator, and compare analysis with performance number.
Wherein crystal oscillator is AT cut type quartz crystal, and resonant frequency is 5MHz, crystal oscillator diameter
25.4mm, thickness is 0.3mm, and the front of wafer being coated with to 1064nm reflectance is 99.5%
Dielectric High Reflective Films.
Fig. 3 give identical go out under light duration, the frequency of crystal oscillator under different capacity Laser shock loading
Amplitude, the result of Fig. 3 is processed by Fig. 4, obtains different crystal oscillator corresponding to laser power
Frequency change peak value, it can be seen that laser power and crystal oscillator frequency change keep good linear
Relation, illustrates can indirectly obtain the performance number of laser by measuring frequency change；Fig. 5 is given
Under identical power conditions, the corresponding relation of Laser shock loading duration and crystal oscillator frequency impulse waveform,
Moment corresponding between can be seen that is corresponding with Laser shock loading duration consistent, illustrates by measuring
Frequency change peak value and corresponding rising edge starting point and trailing edge starting point, it is also possible to be calculated sharp
The energy value of light.
For further confirmatory experiment result, the wafer using routine not plate reflectance coating is carried out
Experiments of measuring, laser is directly carried on the gold electrode of wafer, has obtained knot as shown in Figure 6
Really, illustrate for conventional wafer, it is also possible to produce the change of crystal oscillator frequency, further real
Test and show, for the luminous power of 10mW level, also can produce the change of distinguishable frequency.
Owing to modern frequency measurement has the high spy of technology maturation, Measurement Resolution and precision
Point, the measurement apparatus of the present invention can meet the measurement of laser parameter under the conditions of different capacity, dynamically
Wide ranges, the suitability are strong, have the features such as compact conformation, through engineering approaches are simple, for light beam simultaneously
Parameter measurement provides a kind of new technological means.The invention is not limited in Quartz crystal resonant
Device, the resonator made for other materials is equally applicable, equally at the protection model of the present invention
In enclosing.
Claims (8)
1. a luminous power parameter measuring apparatus based on crystal resonator, it is characterised in that:
Including crystal resonator (3), start-oscillation circuit (4) and frequency measurement unit (5), described
The input of start-oscillation circuit (4) is connected with the electrode of crystal resonator (3), described starting of oscillation
The outfan of circuit (4) electrically connects with frequency measurement unit (5), light beam to be measured (2)
It is incident on the work surface (21) of crystal resonator (3)；Described frequency measurement unit obtains institute
State the peak change of resonant frequency of crystal resonator (3) before and after light beam to be measured loads,
And it is calculated optical power value；Described light beam to be measured is high energy laser beam, described high energy
Laser is the laser that power is more than 10mW；The work surface (21) of described crystal resonator (3)
It is coated with the Dielectric High Reflective Films to the reflection of described light beam height to be measured.
Luminous power parameter measurement based on crystal resonator the most according to claim 1 fills
Put, it is characterised in that: the reflectance of described Dielectric High Reflective Films is more than 99%.
Luminous power parameter measurement based on crystal resonator the most according to claim 1 fills
Put, it is characterised in that: described crystal resonator (3) is quartz crystal oscillator.
Luminous power parameter measurement based on crystal resonator the most according to claim 3 fills
Put, it is characterised in that: the resonant frequency of described quartz crystal oscillator is 1～20MHz.
5. survey according to the luminous power parameter based on crystal resonator described in claim 3 or 4
Amount device, it is characterised in that: the yardstick of described quartz crystal oscillator work surface is 5～50mm.
6. survey according to the luminous power parameter based on crystal resonator described in claim 3 or 4
Amount device, it is characterised in that: described quartz crystal oscillator is AT cut type.
Luminous power parameter measurement based on crystal resonator the most according to claim 1 fills
Put, it is characterised in that: the electrode of described crystal resonator (3) is anchor type electrode, described crystalline substance
Body resonator (3) has the junction point that the input with described start-oscillation circuit (4) is connected, institute
State electrode and described junction point and be arranged on the back side of work surface.
8. the luminous power parameter based on crystal resonator that a kind utilizes described in claim 1 is surveyed
The measuring method of amount device, it is characterised in that comprise the following steps:
[1] crystal resonator starting of oscillation, measures resonant frequency background values f0；
[2] the demarcation light beam of the stable output that power is p1 is incident to crystal resonator work
Face, measures the peak value f1 obtaining resonant frequency；
[3] light beam to be measured is incident to the work surface of crystal resonator, measures and obtains resonant frequency
Peak value f；
[4] luminous power of light beam to be measured is:
P=p1 (f-f0)/(f1-f0), wherein p is the luminous power of light beam to be measured.
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| CN201310217262.9A CN104215326B (en) | 2013-06-03 | 2013-06-03 | Luminous power measurement method of parameters based on crystal resonator and device |
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| CN113091963B (en) * | 2021-03-10 | 2022-08-05 | 电子科技大学 | Optical pressure measuring device |
| CN112985593B (en) * | 2021-03-10 | 2022-02-11 | 电子科技大学 | Frequency type photoelectric converter, device and method |
| CN113098477B (en) * | 2021-03-10 | 2022-12-27 | 电子科技大学 | Current type photoelectric converter, device and method |
| CN113098479B (en) * | 2021-03-10 | 2022-12-27 | 电子科技大学 | Voltage type photoelectric converter, device and method |
| CN112985594B (en) * | 2021-03-10 | 2022-02-11 | 电子科技大学 | Frequency type photoelectric converter, device and method |
| CN113098478B (en) * | 2021-03-10 | 2022-12-27 | 电子科技大学 | Voltage type photoelectric converter, device and method |
| CN112985474B (en) * | 2021-03-10 | 2022-11-01 | 电子科技大学 | Current type photoelectric converter, device and method |
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