CN1042149C - Forming mould for platinum film deposition by ion beam and its technology - Google Patents
Forming mould for platinum film deposition by ion beam and its technology Download PDFInfo
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- CN1042149C CN1042149C CN 93112441 CN93112441A CN1042149C CN 1042149 C CN1042149 C CN 1042149C CN 93112441 CN93112441 CN 93112441 CN 93112441 A CN93112441 A CN 93112441A CN 1042149 C CN1042149 C CN 1042149C
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Abstract
The present invention relates to a forming mould for a platinum film formed by ion beam auxiliary deposition and technology thereof, which belongs to the technical field of forming material coating of vacuum evaporation, sputtering and ion implantation films. The present invention is characterized in that a platinum film of 3 micrometers to 20 micrometers is formed by ion beam auxiliary deposition on a basal body of the forming mould; nitrogen or is used as discharge gas for cleaning and bombarding an ion source, and the inert gas is also used as the discharge gas for sputtering the ion source. By the technology of the present invention, a forming mould which has the advantages of favorable resistance to high temperature oxidation and favorable resistance to corrosion of fused glass, the service life of the forming mould is extended, the production cost is reduced, and the stable production can be ensured; besides, the quality of products can be greatly improved.
Description
The forming mould of platinum film deposition by ion beam of the present invention, be particularly related to raising glass or quartzy hot-drawn or the high temperature oxidation resisting of heat pressing and molding mold and the forming mould of the platinum film deposition by ion beam of anti-molten glass or quartz attack performance, belong to the technical field of the coating of vacuum-evaporation, sputter, ion implantation rete formation material.
In industrial production such as electrovacuum industry and glass, plastics, rubber, use various hot pressing and hot-drawn forming mould in a large number, die matrix is high temperature steel or refractory alloy normally.Special in the production of electric light source and injection bottle, because melten glass or quartzy high temperature erosion and oxidation not only influence the performance and the life-span of mould, and can make product internal surfaces such as fluorescent tube or injection bottle produce striped or become coarse, reduce transparency, directly influence quality product.Therefore, there is the whole bag of tricks to handle die surface, to improve the resistance to high temperature oxidation and the erosive ability of mould.(SU876767 GBI604604), improves mold performance with chemistry and physical method at die surface evaporation resistance to high temperature oxidation coating (spy opens clear 57-071829) and other nitridation treatment method at die surface coated high temperature resistance material in early days.In recent years, also form silicon nitride film (CN85105267) at die surface and reach the purpose of improving mold performance with sputter and ion beam bombardment method.But the anti-melten glass of these coating or quartzy erosion performance all are not so good as platinum.Platinum has high-melting-point (1772 ℃) and fabulous chemical stability, and therefore, at present general glass or quartzy forming mould remain the mode of parcel platinum foil on mould.Yet platinum costs an arm and a leg, and production cost is improved, and enterprise is difficult to bear.Also have and attempt to improve the die matrix material, but facts have proved, produce little effect.The forming mould that uses often needs to change at present, produces to be difficult to continue carry out, and not only increases cost, and is difficult to guarantee quality product.
The objective of the invention is to deficiency at above-mentioned prior art, a kind of good resistance to high temperature oxidation of platinode and erosion performance of both having made full use of proposed, the consumption that significantly reduces platinum again to be reducing cost, and is improved the new mould structure and the manufacturing process thereof in the work-ing life of mould.It is to use the ion beam assisted depositing method, generates on the die matrix surface and combines firmly, has the excellent resistance to high temperature oxidation and the platinum thin layer of anti-melten glass or quartz attack with die matrix, forms the forming mould of platinum film deposition by ion beam.
Forming mould of the present invention comprises high temperature steel or refractory alloy die matrix, it is characterized in that having on the matrix platinum film of one deck ion beam assisted depositing, and platinum film thickness is the 3-20 micron, and the value of best platinum film thickness is the 5-10 micron.
This platinum film adopts following step deposition:
A, die matrix and the platinum target that matting is good are inserted the working spaces of ion beam assisted depositing device, vacuumize to make working spaces's base vacuum less than 1 * 10
-3Handkerchief,
B, with nitrogen or rare gas element as cleaning ionogenic discharge gas, under ion bombardment, peel off the die matrix surface, make and expose unsalted surface,
C, deposited by electron beam evaporation deposition platinum film or with the discharge gas sputtering sedimentation platinum film of rare gas element as the plasma sputter source, in evaporation or sputter, with nitrogen or rare gas element as bombardment from the discharge gas in source, bombarding ion with the energy of 10-100Kev bombards sedimentary platinum film, and the base vacuum in bombarding ion source is less than 4 * 10
-4Handkerchief.
D, close vacuum, take out the mould that has deposited platinum film.
The cover thickness in b step is the 20-50 nanometer in the above-mentioned technology.
Above-mentioned technology C is in the step, and the sedimentation rate of electron beam evaporation is the 15-50 nm/min, and the sedimentation rate of ion beam sputtering is the 5-15 nm/min.
The bombarding ion energy in above-mentioned technology C step is preferably 10-50KeV, beam current density 10-20 microampere/flat centimetre.
Can prepare the forming mould of the platinum film deposition by ion beam of deposition 3-20 micron with technology of the present invention, die surface is smooth, and the geometrical dimension of mould is almost constant before and after the deposition.Use mould of the present invention to improve the high temperature oxidation resistance of mould and the erosion performance of anti-melten glass or quartz greatly, prolonged the life-span of mould.The present invention makes platinum film combine firmly with die matrix by ion beam assisted depositing, but life-time service, the quality product and steady in a long-term production that have guaranteed to use forming mould.
Below by the ion beam sputter depositing platinum film and further specify technology of the present invention with the embodiment of ion beam bombardment deposition platinum film simultaneously.
1. ion beam assisted depositing device
Fig. 1 represents the ion beam assisted depositing device that present embodiment is used.It is a kind of wide beam Ion Mixing device.This device is made up of three ion sources and corresponding lead division, sputtering target, working spaces and worktable, the power supply, the Controlling System that comprise vacuum system, sputtering target and worktable cooling system, ion source airing system and complete machine in addition, except that vacuum system, do not draw among the figure.1 is that bombarding ion source (high-pressure ion source), 2 is for cleaning ion source among the figure.3 is main vacuum system, and 4 is worktable, the 5th, and plasma sputter source, the 6th, sputtering target, the 7th, assisted vacuum system, the 8th, pending workpiece.
Three ion sources 1,2,5 all adopt Kaufman type double grid porous deriving structure.Bombarding ion source 1 is used for the ion bombardment of moderate energy, ion energy can be in the 3-100kev range, adopt nothing to focus on, do not have the deriving structure of analysis, short light path, to reach high current, bundle transmission efficiently, make in the area of a circle of φ 200mm in work top, the line distribution consistency degree is better than 20%.The work capacity in plasma sputter source 5 is usually more than 2kev, and beam intensity 100-150mA, sputter bundle are focus state improving sputter rate, general sputter rate in the several nanometers of per minute between the hundreds of nanometer.Cleaning the ion energy of ion source 2 can regulate in 300-1000ev, maximum beam 50mA, sputtering target 6 is by centering on transverse axis, and three targets of the 120 ° of layouts of being separated by are formed, can the sputter differing materials to be in workpiece surface in turn under the condition of not destroying vacuum, the present invention only uses the platinum target.Be provided with water-cooling system in the sputtering target target stand.Worktable 4 places in the working spaces, workpiece 8 (pending die matrix) can be made multiple mode with worktable and move on worktable, clean the homogeneity of spatter film forming and ion beam bombardment, the consistence of assurance die matrix surface platinum film deposit thickness and performance to improve the workpiece surface ionic fluid.Also be provided with water-cooling system in the worktable.Main vacuum system 3 guarantees that the base vacuum of working spaces is less than 1 * 10
-3Handkerchief, the assisted vacuum system makes the base vacuum in bombarding ion source be less than 4 * 10
-4Behind the handkerchief, start and clean ion source 2 with ionic fluid cleaning die matrix, clean ionogenic discharge gas and use argon, ion energy 950ev makes die surface peel off the 20-50 nanometer, to expose unsalted surface.
3. start sputter and bombarding ion source, the discharge gas in plasma sputter source is an argon, and the discharge gas in bombarding ion source adopts nitrogen, and work simultaneously in sputter and bombarding ion source, plasma sputter energy 2-2.5KeV, line 90-130mAAr
+, sputter deposition rate 10-15 nm/min, the bombarding ion energy is at 50-100KeV, and beam current density is 10-20 microampere/square centimeter, and sputter and bombardment time are decided on needing sedimentary platinum film thickness.
Can obtain the forming mould of platinum film deposition by ion beam of the present invention with the technology of present embodiment, platinum film thickness is the 5-10 micron.
The forming mould of present embodiment is proof on probation in the power saving fluorescent lamps production process, and the mould single cycle on probation that has deposited platinum film has surpassed nine times of original mould life-span.After unloading, can be contained in again and continue on the production line to use, its cost is significantly less than the forming mould with the platinum film parcel.Use mould of the present invention, guaranteed the quality of power saving fluorescent lamps, also realized production steady in a long-term, reduce the loss that stops production, thereby improved productivity effect greatly.
In the foregoing description, increase an apparatus for electron beam evaporation (or plasma sputter source apparatus of alternative the foregoing description) again as the ion beam assisted depositing device, then can electron beam evaporation platinum film substitutional ion beam sputtering platinum film, in evaporation, with the bombarding ion bombardment, also can obtain the forming mould of platinum film deposition by ion beam too.The sedimentation rate of deposited by electron beam evaporation deposition platinum film is the 15-50 nm/min.
Claims (5)
1, a kind of mould with platinum film deposition by ion beam comprises high temperature steel or refractory alloy die matrix, it is characterized in that on matrix with ion beam assisted depositing process deposits thickness being the platinum film of 3-20 micron, and this platinum film adopts following step deposition:
A, die matrix and the platinum target that matting is good are inserted the working spaces of ion beam assisted depositing device, vacuumize to make working spaces's base vacuum less than 1 * 10
-3Handkerchief,
B. with nitrogen or rare gas element as cleaning ionogenic discharge gas, under ion bombardment, peel off the die matrix surface, make and expose unsalted surface, the thickness of die matrix sur-face peeling is the 20-50 nanometer,
C makes the discharge gas sputtering sedimentation platinum film in plasma sputter source or with conventional electrical beam evaporation deposition platinum film with rare gas element, and in the deposition platinum film, with nitrogen or rare gas element discharge gas as the bombarding ion source, in vacuum less than 4 * 10
-4Under the handkerchief condition, with the 10-100Kev energy bombard while depositing the deposition in platinum film,
D. close vacuum, take out the mould of deposition platinum film.
2. the mould with platinum film deposition by ion beam according to claim 1, the thickness that it is characterized in that platinum film deposition by ion beam is the 5-10 micron.
3. the mould with platinum film deposition by ion beam according to claim 1 is characterized in that bombardment is a nitrogen from the discharge gas in the source from being argon in the cleaning ion source of bundle platinum film deposition and the discharge gas in plasma sputter source.
4. according to claim 1 or 3 described moulds with platinum film deposition by ion beam, the sedimentation rate that it is characterized in that ion beam sputter depositing platinum film or electron-beam evaporation platinum film is the 15-50 nm/min.
5. according to claim 1 or 3 described moulds with platinum film deposition by ion beam, the energy that it is characterized in that bombarding ion is 10-50Kev.Beam current density is 10-20 microampere/square centimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93112441 CN1042149C (en) | 1993-05-21 | 1993-05-21 | Forming mould for platinum film deposition by ion beam and its technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93112441 CN1042149C (en) | 1993-05-21 | 1993-05-21 | Forming mould for platinum film deposition by ion beam and its technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1095428A CN1095428A (en) | 1994-11-23 |
| CN1042149C true CN1042149C (en) | 1999-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93112441 Expired - Fee Related CN1042149C (en) | 1993-05-21 | 1993-05-21 | Forming mould for platinum film deposition by ion beam and its technology |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1332062C (en) * | 2004-05-14 | 2007-08-15 | 中国科学院半导体研究所 | Method for depositing thin oxide coating through oxygen ion beam in low energy and auxiliary impulse laser |
| CN110541153A (en) * | 2018-05-29 | 2019-12-06 | 李紫茵 | Method for preparing film by deposition and film coating machine |
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1993
- 1993-05-21 CN CN 93112441 patent/CN1042149C/en not_active Expired - Fee Related
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| CN1095428A (en) | 1994-11-23 |
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