CN104205352A - 太阳能电池、太阳能电池组件和太阳能电池的制造方法 - Google Patents
太阳能电池、太阳能电池组件和太阳能电池的制造方法 Download PDFInfo
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- CN104205352A CN104205352A CN201280071740.3A CN201280071740A CN104205352A CN 104205352 A CN104205352 A CN 104205352A CN 201280071740 A CN201280071740 A CN 201280071740A CN 104205352 A CN104205352 A CN 104205352A
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- conducting material
- electric conducting
- solar cell
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004020 conductor Substances 0.000 claims abstract description 141
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 24
- 239000002002 slurry Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000006255 coating slurry Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 electronics Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
Claims (8)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/057481 WO2013140597A1 (ja) | 2012-03-23 | 2012-03-23 | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104205352A true CN104205352A (zh) | 2014-12-10 |
Family
ID=49222091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280071740.3A Pending CN104205352A (zh) | 2012-03-23 | 2012-03-23 | 太阳能电池、太阳能电池组件和太阳能电池的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140352780A1 (zh) |
EP (1) | EP2830099B1 (zh) |
CN (1) | CN104205352A (zh) |
WO (1) | WO2013140597A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111698942A (zh) * | 2018-02-16 | 2020-09-22 | 索尼公司 | 电极和传感器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076398A (ja) * | 2000-08-29 | 2002-03-15 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2004140087A (ja) * | 2002-10-16 | 2004-05-13 | Canon Inc | 太陽電池用多結晶シリコン基板とその製造法、及びこの基板を用いた太陽電池の製造法 |
JP2010087131A (ja) * | 2008-09-30 | 2010-04-15 | Mitsubishi Materials Corp | 導電性インク組成物及び該組成物を用いて形成された太陽電池モジュール |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009146578A (ja) * | 2007-12-11 | 2009-07-02 | Noritake Co Ltd | 太陽電池および太陽電池用アルミニウムペースト |
JP5656380B2 (ja) * | 2008-09-30 | 2015-01-21 | 三菱マテリアル株式会社 | 導電性インク組成物及び該組成物を用いた太陽電池セル及び太陽電池モジュールの製造方法 |
JP2011054837A (ja) * | 2009-09-03 | 2011-03-17 | Kaneka Corp | 結晶シリコン系太陽電池 |
-
2012
- 2012-03-23 EP EP12871702.2A patent/EP2830099B1/en active Active
- 2012-03-23 WO PCT/JP2012/057481 patent/WO2013140597A1/ja active Application Filing
- 2012-03-23 CN CN201280071740.3A patent/CN104205352A/zh active Pending
-
2014
- 2014-08-14 US US14/459,369 patent/US20140352780A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076398A (ja) * | 2000-08-29 | 2002-03-15 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2004140087A (ja) * | 2002-10-16 | 2004-05-13 | Canon Inc | 太陽電池用多結晶シリコン基板とその製造法、及びこの基板を用いた太陽電池の製造法 |
JP2010087131A (ja) * | 2008-09-30 | 2010-04-15 | Mitsubishi Materials Corp | 導電性インク組成物及び該組成物を用いて形成された太陽電池モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20140352780A1 (en) | 2014-12-04 |
EP2830099A1 (en) | 2015-01-28 |
WO2013140597A1 (ja) | 2013-09-26 |
EP2830099B1 (en) | 2019-06-05 |
EP2830099A4 (en) | 2015-12-09 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160219 Address after: Osaka Japan Applicant after: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. Effective date of registration: 20160219 Address after: Osaka Japan Applicant after: Matsushita Electric Industrial Co.,Ltd. Address before: Osaka Japan Applicant before: Sanyo Electric Co.,Ltd. |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141210 |