CN104201443B - A kind of bifrequency Terahertz bandpass filter and preparation method thereof - Google Patents
A kind of bifrequency Terahertz bandpass filter and preparation method thereof Download PDFInfo
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- CN104201443B CN104201443B CN201410401306.8A CN201410401306A CN104201443B CN 104201443 B CN104201443 B CN 104201443B CN 201410401306 A CN201410401306 A CN 201410401306A CN 104201443 B CN104201443 B CN 104201443B
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Abstract
A kind of bifrequency Terahertz bandpass filter of the present invention and preparation method thereof, a kind of design and fabrication of the bifrequency Terahertz bandpass filter based on semi-insulating GaAs surface using the complementary type split ring resonator unit of hollow out is referred specifically to, is related to Terahertz Technology and semiconductor microactuator processing technique field.The present invention uses the operation principle of complementary type split ring resonating member, by adjusting C SRR internal diameters, external diameter, A/F, periodic structure, realize the resonance of surface plasmon polariton, mode enhanced with two kinds of exception transmissions of inductance capacitance (LC) resonance, obtains low frequency and high-frequency resonance.Energy is changed between two resonant frequencies are realized in the electromagnetic interaction resonated using above two, so that reaching the Terahertz output of identical intensity in transmission on two wave bands.The present invention has preparation process is simple, easy to operate, can greatly reduce cost of manufacture with precise control complementary type split ring resonator micro-structural machining area.
Description
Technical field
The present invention relates to Terahertz Technology and semiconductor microactuator processing technique field, refer specifically to a kind of based on semi-insulating GaAs
(SI-GaAs) surface uses bifrequency Terahertz (THz) bandpass filtering of complementary type split ring resonator unit (C-SRR) of hollow out
The design and fabrication of device.
Background technology
THz wave (Terahertz, abbreviation THz) refers to that between microwave and infrared spectrum, frequency range is 0.1THz
To the electromagnetic wave (1THz=10 of 10THz12Hz), ultrahigh-frequency microwave to the spy between far infrared radiation is located on electromagnetic spectrum
Different region.For ultrasonic wave, X-ray, the mid and far infrared common compared to people, THz ripples have unionized and coherence, no
The internal structure and intrinsic attribute of detected material can be destroyed.Common paper, plastics, desiccated wood, connects to THz electromagnetic radiation
Near-transparent, and metal or conductance object very high can effectively reflect THz ripples.Thus, can be used extensively using the imaging of THz ripples
In the safety monitoring in the place such as airport, customs, such as hiding firearms, explosive, drugs etc. are detected, without being caused to human body
Injury；Industrially can be also used for detecting the damage of integrated circuit welding, for the means of quality control.THz as can be seen here
To China's national security, medical diagnosis, the field such as quality testing has great importance technology.
To realize the extensive use of THz technologies, except it is effective produce and detection THz ripples in addition to, also include how to
The THz ripples propagated in space are manipulated.In actual applications, limitation for being needed due to applied environment noise and application etc.,
Unwanted frequency scope and noise need to be filtered, the performance of system is improved, such as：Many baroque polymer chemistry product, it is raw
Thing medical articles, have the characteristic spectral line of finger-print type in some specific bands, when material composition to be checked is complicated, THz ripples are absorbed
, it is necessary to dispel unwanted impurity signal with THz wave filters in the case that intensity differs.Thus THz wave filters turn into and realize
The extensive use critical elements of THz technologies.
At present, as the research of terahertz filter deepens continuously, following different THz filtering was proposed successively in the last few years
Device：
(1) the terahertz filter structure based on photonic crystal
Its structure is two One Dimension Periodic structure --- Prague minute surfaces for occurring in pairs, in two Bragg mirrors
Between insert warm luminescent material, so as to introduce defect in 1-D photon crystal structure, the presence of defect mode causes original structure
Occurs a very narrow passband in the forbidden band of formation, the optical signal that frequency falls in narrow free transmission range can be passed in said structure
It is defeated, realize filter function.
(2) terahertz filter based on artificial cycle structure
Layer of metal film is plated in dielectric surface, then when electromagnetic wave incident is to metal and dielectric interfaces, is entered
Penetrate field to be transmitted along dielectric surface, surface plasma (Surface Plasmon, abbreviation SP) is formed on surface.If in metal
Periodic structure is stamped on film just can form SP, have transmission system very high to the incident THz ripples in a certain frequency range
Number, realizes the THz wave filters of regulable center frequency.
Above-mentioned first kind scheme, mainly realizes adjustability by adjusting the temperature of dielectric substance, but working frequency is fixed,
The regulation of working frequency can only be realized by changing structural parameters, and effective frequency is general between 0.1THz to 1THz, nothing
Method meets whole THz wave bands, and high processing costs, device volume are big.Above-mentioned Equations of The Second Kind scheme, by the shape for changing metallic film
Shape can change the working frequency of wave filter, and transmitance is very high between 0.1THz to 10THz, and structure processing and fabricating is simple,
Use cost is low.The structure of the terahertz filter of conventional surface plasma periodic structure is by femtosecond pulse processing method
Hole of different shapes is stamped on metallic film, such as：Rectangle, circular, ellipse etc. is realized.In recent years, Meta Materials
(Metamaterial) appearance, introduce split ring resonator unit (Split-Ring Resonantor, abbreviation SRR) this
New construction.For a common metal annulus in perpendicular variation magnetic field, induction field, but and anharmonic can be produced
The system shaken.In order to produce resonance to strengthen magnetic response, it is necessary to introduce electric capacity.Because inductance and electric capacity could form resonance electricity together
Road (metal ring can be considered inductance).A breach is added on becket for this, electric capacity is formed, electric charge can be accumulated at two ends
It is poly-.This split ring resonator is just analogous to a LC resonance circuit with electric capacity.Physical dimension, metal when split ring resonator
After material, the physical parameter of the three of dielectric substrate are mutually matched, LC resonance will occur to the THz ripples of CF, from
And obtain THz bandstop filters very high.
Above two THz wave filters are substantially all THz ripples response only to CF, such as：Sub-wavelength period metal
The interference effect mutually long of surface plasma (SP) resonance in structure, the LC resonant frequencies of the split ring resonator of Meta Materials depend on
In ring openings of sizes and ring inner and outer diameter.This causes that above-mentioned design is only sensitive to single-frequency.How can be high in retainer member
Under conditions of degree is integrated, expanding the frequency response range of THz wave filters turns into one of problem of current THz wave filters research.
The content of the invention
It is an object of the invention to the technical limitation and the market demand that are directed to existing for existing Terahertz bandpass filter,
The Terahertz filter element of a kind of binary channels, height output, and its preparation method simple and easy to apply, with low cost are provided.
The present invention can realize that SP resonates by a kind of new construction, and can result in LC resonance simultaneously, it becomes possible in original
The characteristics of bifrequency being reached in reason and resonates.And SP resonance caused by general sub-wavelength small structure, CF THz ripples can be produced
Raw abnormal transmission, so as to realize band-pass filtering function；And LC resonance caused by the distinctive opening resonance loop structure of Meta Materials, to spy
Determine frequency THz ripples and produce absorption, so as to realize bandreject filtering function.But if simply both are merged be cannot be real
Existing bifrequency band-pass filtering function.Accordingly, it is further proposed that the geometry of sub-wavelength period aperture is humorous according to opening
The structure of ring of shaking is designed, equal to the hole of the split ring resonator shape that hollow out is formed in metal-coated films dielectric surface.In thing
In reason, SP resonance is can be realized as simply by the presence of periodicity sub-wavelength array of orifices, and if aperture is presented split ring resonator shape
Shape, then according to the symmetry principle in physics, the originally inductance zone of action is changed into the electric capacity zone of action, and the electric capacity zone of action
It is changed into the inductance zone of action, realizes the complementation with common split ring resonator function, and LC resonance causes absorption to become abnormal saturating
Penetrate enhancing.As long as SP resonant frequencies are different with LC resonant frequencies, it becomes possible to realize the function of bifrequency THz bandpass filterings.Using
The operation principle of complementary type split ring resonating member, by adjusting C-SRR internal diameters, external diameter, A/F, periodic structure, realizes
The resonance of surface plasmon polariton, and inductor-capacitor (LC) resonates the enhanced mode of two kinds of abnormal transmissions, obtain low frequency and
High-frequency resonance.Then, energy is changed between two resonant frequencies are realized in the electromagnetic interaction resonated using above two, so that
Export the Terahertz that identical intensity in transmission is reached on two wave bands.
According to above-mentioned thinking and principle, the present invention is semi-insulating in 0.6mm thickness using standard semiconductor device micro fabrication
GaAs (SI-GaAs) surface, manufacturing cycle complementary type split ring resonator unit (C-SRR) causes surface plasma to polarize
Excimer is excited and inductor-capacitor (LC) two kinds of physical process collective effects of resonance, the on a different frequency abnormal transmission enhancing of generation
To realize bifrequency THz band-pass filtering functions.
Bifrequency Terahertz (THz) bandpass filter, its feature is, the periodicity complementary type split ring resonator
Unit (C-SRR), cellular construction is the band breach for realizing hollow out by semiconductor microactuator processing technology on a smooth metal face
Ring-type periodic structure, between the external diameter and internal diameter of its periodicity complementary type split ring resonator (C-SRR), except interval with outside
It is all hollow out to divide.
A kind of specific design of bifrequency Terahertz bandpass filter of the present invention includes with specific preparation flow：To swash
SI-GaAs substrates after light processing are put into deionized water, are cleaned 1 minute under ultrasonic state, and the cycle is presented on surface after drying
Property structure side spin coating photoresist, according to positive adhesive process, develop by exposure in 65 seconds and 45 seconds, the SRR figures that will be designed turn
Move on on the thick SI-GaAs substrates of 0.6mm.And then sample is put into evaporation chamber, then and passes through thermal evaporation process by 5nm
Titanium and 50nm gold evaporations arrive substrate surface, and the vacuum in evaporation process maintains 10-4Mbar, evaporation thickness is carried by system
Film thickness monitoring device when survey.After metallization, after sample is put into acetone soln immersion 12 hours, sample is clamped using ceramic pincette
Product, slowly rock in acetone soln, peel off extra metal level after acetone corrosion photoresist, and are containing periodically micro- knot
Structure side forms the complementary type split ring resonator (C-SRR) of the hollow out consistent with layout, and holding electrode and semiconductor table
The ohmic contact characteristic in face.
The layout of above-mentioned bifrequency Terahertz bandpass filter, its feature is, the complementary type split ring resonator
(C-SRR) structure is as follows：R=16 μm of external diameter, r=12 μm of internal diameter, interval width g are respectively 2 μm, 5 μm, 10 μm, C-SRR's
The unit cycle is 40 μm, and the region area that the C-SRR of device surface is covered is 100mm2Rectangular area (10mm × 10mm).
The structure of above-mentioned bifrequency Terahertz bandpass filter metal level, its feature is that 5nm thickness titaniums are bonded
Layer, 50nm thickness gold does electrode material.The electrode meets Ohmic contact condition, without being made annealing treatment after evaporation.
The performance of above-mentioned bifrequency Terahertz bandpass filter, its feature is, when g=2 μm, low frequency (fl=
0.63THz) transmission potential is less than high frequency (fh=1.94THz) transmission potential, when g=5 μm, low frequency (fl=0.72THz) transmission
Energy and high frequency (fh=1.96THz) transmission potential approximately equal, when g=10 μm, low frequency (fl=0.78THz) transmission potential
Higher than high frequency (fh=1.99THz) transmission potential.
Product prepared by the present invention carries out performance characterization by the following means：Seminar is defended certainly using Chinese Academy of Sciences Zhao Hong
The terahertz time-domain spectroscopy measurement making devices built.The system includes：Spectra-Physics Mai Tai SP type high-energy
Ultra-short pulse laser, 2 pairs of diameter 100mm, the gold-plated off axis paraboloidal mirrors of focal length 100mm are used for focusing on the terahertz in free space
Hereby radiate, by by one piece of 200 μ m-thick<110>The ZnTe crystal of crystal orientation, quarter wave plate, the electric light of Wollastom prisms composition
Sampling system symbolizes the terahertz sources impulse waveform of device.
The present invention compared with prior art, with advantages below and prominent effect：Work is processed using existing semiconductor microactuator
Skill, it is preparation process is simple, easy to operate, can be substantially reduced with precise control complementary type split ring resonator micro-structural machining area
Cost.It is simple using Au/Ti electrode compositions, can both obtain good ohmic contact, the reliability of the device of raising without annealing
And integration.
Brief description of the drawings
Fig. 1 is that the surface complementarity type split ring resonator micro-structural of bifrequency Terahertz bandpass filter of the present invention is cutd open with device
Face (black portions are metal level in figure, and blank parts are the complementary type split ring resonator microstructure unit of hollow out)；
Fig. 2 is the transmission time domain beamformer of bifrequency Terahertz bandpass filter of the present invention；
Fig. 3 is that the transmission spectrum figure of bifrequency Terahertz bandpass filter of the present invention (is carried out soon by data shown in Fig. 3
Fast Fourier transform Fast Fourier Transform are obtained)；
Fig. 4 is the bifrequency Terahertz bandpass filter that the present invention implements accompanying drawing 3 in 0.1THz to 2.5THz wave bands
Filtering characteristic figure (g=2 μm of where the dotted line signifies that, solid line represents g=5 μm, and dotted line represents g=10 μm, in the case of filtered spectrum
Characteristic).
Specific embodiment
Further detailed, clear, complete explanation is done to the present invention with reference to the accompanying drawings and examples
The embodiment of the present invention.A kind of described bifrequency Terahertz bandpass filter (as shown in the top half of accompanying drawing 1), knot
Black portions are metal level in composition, and white portion is the resonant element of bifrequency Terahertz bandpass filter, and the region is to engrave
Empty complementary type split ring resonator microstructure unit.Wherein, net region represents SI-GaAs linings the, black side part represents soon
50nm gold, Gray Square partly represents 5nm titaniums soon (as shown in the latter half of accompanying drawing 1).Its feature is, the periodicity complementary type
The two-dimensional structure of split ring resonating member, the unit cycle is 40 μm, external diameter is 16 μm, internal diameter is 12 μm, interval width g is at 2 μm
Change in the range of to 10 μm, be capable of achieving the function of bifrequency Terahertz bandpass filter.Wherein, the unit cycle refers to two
The distance between complementary type split ring resonating member center of adjacent hollow out.Interval refers to the complementary type split ring resonance of hollow out
The spacing (as shown in Figure 1) at unit split shed two ends.
Further, a kind of described bifrequency Terahertz bandpass filter, its feature is that the periodicity is complementary
The metal-layer structure of type split ring resonating member, tack coat is done using 5nm thickness titaniums, and the thick gold materials of 50nm do electrode, partly lead
Body substrate uses semi-insulating GaAs.
The making of complementary type split ring resonator (C-SRR) structure of bifrequency Terahertz bandpass filter of the present invention, wherein,
Complementary type split ring resonator (C-SRR) structure of designed bifrequency Terahertz bandpass filter is as follows：R=16 μm of external diameter,
R=12 μm of internal diameter, interval width g are respectively 2 μm, 5 μm, 10 μm, and the unit cycle of C-SRR is 40 μm, the C- of device surface
The region area that SRR is covered is 100mm2Rectangular area (10mm × 10mm).Photomask board is ordered according to the structure pattern,
Then using positive adhesive process by the pattern transfer of complementary type split ring resonating member to SI-GaAs, idiographic flow is as follows：
The first step：Just SI-GaAs substrates are placed in deionized water, and are cleaned in the ultrasound environments of 10kHz frequencies, are gone
Except remained on surface particulate matter.Then surface is dried up with high pressure nitrogen.
Second step：Dried sample is placed on spin coating platform, AZ1500 type photoresists are dropped in into week under the conditions of gold-tinted
Phase property micro-structure surface, and spin coating carried out with the slow-speed of revolution of 600r/min immediately, after maintaining 10s, rotating speed directly brings up to
The rotating speed high of 3000r/min carries out whirl coating, maintains 60s so that glue is thick<1.5μm.
3rd step：Sample after gluing is placed on the drying glue platform with 110 DEG C the baking for carrying out 60s, solidifies photoresist.
4th step：The sample that photoresist will be scribbled is transferred on URE-2000/35 type ultraviolet photolithographic machines, is exposed in sample surfaces
After light 60s, by the pattern transfer of photomask board complementary type split ring resonating member to sample, then develop in developer solution
45s, and be transferred in deionized water mortise and clean 60s, dry up sample surfaces with compressed nitrogen immediately after taking-up.
5th step：Dried sample is placed on thermal evaporation plated film instrument sample holder, purity then will be filled respectively is
The tungsten boat at bronze end of 99.999% titanium powder with 99.999% is connected in two groups of different electrodes, after closing evaporation chamber
Start vavuum pump, chamber inner pressure is reduced to 10 from standard atmospheric pressure by force-4Mbar, is then turned on connecting the power supply of titanium, and
Current strength is improved, untill film thickness detector display thickness increases, with the evaporation rate of 0.1nm/s, continues the company of cut-out after 50s
The power supply of logical titanium, and the power supply containing golden tungsten boat is connected, and current strength is improved, until film thickness detector display thickness increases
Untill, with the evaporation rate of 0.2nm/s, cut off the electricity supply after continuing 250s, vavuum pump is closed step by step after cooling 600s, wait chamber inner pressure
Evaporation cavity is opened after strong recurrence standard atmospheric pressure, sample is taken out.
6th step：Sample after metallization is immersed in preprepared 99.999% purity acetone solvent, is utilized
Photoresist after acetone infiltration solidification, by the metal-stripping SI-GaAs surfaces in glue surface, without the metal portion of photoresist protection
Fractionation is on SI-GaAs, so as to obtain the complementary type split ring resonator (C-SRR) of hollow out.
A kind of metal level of bifrequency Terahertz bandpass filter electrode of the present invention, its feature is that 5nm thickness titaniums do
Tack coat, the thick gold of 50nm, can form Ohmic contact, without being made annealing treatment again with SI-GaAs.
A kind of performance of complementary type split ring resonator (C-SRR) structure of bifrequency Terahertz bandpass filter of the present invention.
Its feature is, when g=2 μm, low frequency (fl=0.63THz) transmission potential be less than high frequency (fh=1.94THz) transmission potential,
When g=5 μm, low frequency (fl=0.72THz) transmission potential and high frequency (fh=1.96THz) transmission potential approximately equal, work as g=
At 10 μm, low frequency (fl=0.78THz) transmission potential be higher than high frequency (fh=1.99THz) transmission potential.It is in terahertz time-domain light
The pulse transmission characteristic (as shown in Figure 2) of spectrum detecting system (THz-TDS), corresponding spectral characteristic (as shown in Figure 3) is deducted
After SI-GaAs substrates absorb, device is in the overall filtering performance (as shown in Figure 4) of 0.1THz to 2.5THz wave bands.
In sum, the present invention has and utilizes existing semiconductor microactuator processing technology, preparation process is simple, easy to operate,
Cost can be greatly reduced with precise control complementary type split ring resonator micro-structural machining area.Using the letter of Au/Ti electrode compositions
Singly, the characteristics of can both having obtained good ohmic contact, the reliability and integration of the device of raising without annealing.
In view of can be widely used for the safety monitoring in the place such as airport, customs using the imaging of THz ripples, such as detect hiding rifle
Tool, explosive, drugs etc., without being damaged to human body；Industrially can be also used for detecting the damage of integrated circuit welding
Wound, for the means etc. of quality control.Thus, the present invention is to China's national security, medical diagnosis, the application of the field such as quality testing
There is provided solid technology material base.
Claims (5)
1. a kind of bifrequency Terahertz bandpass filter, it is characterised in that on 0.6mm thickness semi-insulating GaAs surface, using mark
Quasi- semiconductor devices micro fabrication, causes surface plasmon polariton to excite and inductor-capacitor two kinds of physical processes of resonance
Collective effect, produces abnormal transmission enhancing to realize that the unit cycle of bifrequency THz band-pass filtering functions is 40 μ on a different frequency
M, external diameter are 16 μm, internal diameter is 12 μm, interval refer to hollow out complementary type split ring resonating member split shed two ends spacing it is wide
The periodicity complementary type split ring resonating member of the two-dimensional structure that degree g changes in the range of 2 μm to 10 μm.
2. a kind of bifrequency Terahertz bandpass filter as claimed in claim 1, it is characterised in that the periodicity complementary type
Split ring resonating member, the band that cellular construction realizes hollow out on a smooth metal face, by semiconductor microactuator processing technology lacks
The ring-type periodic structure of mouth, between the external diameter and internal diameter of its periodicity complementary type split ring resonating member, except interval is with outside
It is all hollow out to divide.
3. a kind of bifrequency Terahertz bandpass filter as claimed in claim 1, it is characterised in that the periodicity complementary type
The metal-layer structure of split ring resonating member, tack coat is done using 5nm thickness titaniums, and the thick gold materials of 50nm do electrode, semiconductor
Substrate uses semi-insulating GaAs.
4. a kind of bifrequency Terahertz bandpass filter as described in claim 1 or 3, it is characterised in that the bifrequency is too
The complementary type opening resonance loop structure of hertz bandpass filter, external diameter is 16 μm, internal diameter is 12 μm, interval width g is respectively 2 μ
M, 5 μm, 10 μm, unit cycle of C-SRR is 40 μm, the rectangular area 10mm that the C-SRR of device surface is covered × 10mm, face
Product is 100mm2。
5. a kind of making of bifrequency Terahertz bandpass filter, it is characterised in that use standard semiconductor device micro Process work
Skill：Photomask board, positive adhesive process are ordered according to structure pattern, heat steams technique, and stripping technology makes metal level, and idiographic flow is such as
Under：
The first step：SI-GaAs substrates are placed in deionized water, and are cleaned in the ultrasound environments of 10kHz frequencies, remove surface
Residual particles, are then dried up surface with high pressure nitrogen；
Second step：Dried sample is placed on spin coating platform, AZ1500 type photoresists is dropped in periodically under the conditions of gold-tinted
Micro-structure surface, and spin coating carried out with the slow-speed of revolution of 600r/min immediately, after maintaining 10s, rotating speed directly brings up to 3000r/min
Rotating speed high carry out whirl coating, maintain 60s so that 1.5 μm of glue thickness ＜；
3rd step：Sample after gluing is placed on 110 DEG C of drying glue platform the baking for carrying out 60s, solidifies photoresist；
4th step：The sample that photoresist will be scribbled is transferred on URE-2000/35 type ultraviolet photolithographic machines, in sample surfaces exposure
After 60s, by the pattern transfer of photomask board complementary type split ring resonating member to sample, then develop 45s in developer solution,
And be transferred in deionized water mortise and clean 60s, dry up sample surfaces with compressed nitrogen immediately after taking-up；
5th step：Dried sample is placed on thermal evaporation plated film instrument sample holder, purity then will be filled respectively is
The tungsten boat at bronze end of 99.999% titanium powder with 99.999% is connected in two groups of different electrodes, after closing evaporation chamber
Start vavuum pump, chamber inner pressure is reduced to 10 from standard atmospheric pressure by force-4Mbar, is then turned on connecting the power supply of titanium, and
Current strength is improved, untill film thickness detector display thickness increases, with the evaporation rate of 0.1nm/s, is cut off after continuing 200s
The power supply of titanium is connected, and connects the power supply containing golden tungsten boat, and improve current strength, until film thickness detector display thickness increases
Add as stopping, with the evaporation rate of 0.2nm/s, cut off the electricity supply after continuing 500s, vavuum pump is closed step by step after cooling 600s, wait in chamber
Pressure opens evaporation cavity after returning standard atmospheric pressure, takes out sample；
6th step：Stripping technology includes step：Sample after metallization is immersed in 99.999% purity acetone solvent, is utilized
Photoresist after acetone infiltration solidification, by the metal-stripping semi-insulating GaAs surface in glue surface, and the gold of non-photoresist protection
Category is partially left on semi-insulating GaAs, as periodicity complementary type split ring resonating member.
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| Dynamical Electric and Magnetic Metamaterial Response at Terahertz Frequencies;W. J. Padilla et al.;《PHYSICAL REVIEW LETTERS》;20060317;第96卷;全文 * |
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