CN104201271A - Led灯丝 - Google Patents

Led灯丝 Download PDF

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CN104201271A
CN104201271A CN201410255603.6A CN201410255603A CN104201271A CN 104201271 A CN104201271 A CN 104201271A CN 201410255603 A CN201410255603 A CN 201410255603A CN 104201271 A CN104201271 A CN 104201271A
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substrate
described substrate
insulator
electrode pin
led
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CN104201271B (zh
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张永林
孙业民
刘泽
陈文菁
潘武灵
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DONGGUAN ZHIHAO PHOTOELECTRIC TECHNOLOGY Co.,Ltd.
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Guangdong Evenwin Precision Technology Co Ltd
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

一种LED灯丝，呈长条状结构，包括采用金属材质的基板、与所述基板一体成型的采用透明材质的绝缘体、封装于所述基板上的LED芯片、及第一、第二电极引脚，所述基板上有若干间隔设置的透光孔，所述相邻的每两个透光孔之间形成用于封装所述LED芯片的固晶部，所述绝缘体包括包覆所述基板的基部、自所述基部边缘向上延伸形成侧壁、及形成于所述基板上方的收容腔，所述绝缘体贯穿所述基板的透光孔形成透光结构，所述基板的固晶部的背面露出于所述绝缘体外，所述LED芯片发出的光线通过所述透光结构散发至所述基板的背面一侧；本发明的LED灯丝结构牢固、散热性好、能360度传播光线。

Description

LED灯丝
技术领域
本发明涉及LED照明领域，尤指一种LED灯丝。
背景技术
近几年来，LED照明领域发展迅速，各种各样的LED灯具开始融入人们的生活之中。但LED灯与传统白炽灯、荧光灯的原理结构等完全不同，LED灯是通过LED芯片来发光的，需要将LED芯片整合入灯具之内。而部分消费者需要依托原有的灯头等结构来实现LED照明的可能性，也有部分消费者希望LED照明灯具能够不改变原有结构方式，如，球泡灯等，LED灯丝能够解决球泡灯的问题。
中国201310239213.5号专利资料揭示了一种LED灯丝，包括基板、两个电极引脚、固晶于基板上的LED芯片，所述基板采用透明陶瓷材料制成，如此，可解决LED芯片四面透光性的问题，但是陶瓷材料价格较贵、且制造加工工艺复杂、同时对LED芯片的散热型解决不够好，容易造成产品寿命较短等问题。
发明内容
本发明的目的在于提供一种结构牢固、散热性好、且可四面透光的LED灯丝。
为此，本发明提供了一种LED灯丝，呈长条状结构，包括采用金属材质的基板、与所述基板一体成型的采用透明材质的绝缘体、封装于所述基板上的LED芯片、及第一、第二电极引脚，所述基板上有若干间隔设置的透光孔，所述相邻的每两个透光孔之间形成用于封装所述LED芯片的固晶部，所述绝缘体包括包覆所述基板的基部、自所述基部边缘向上延伸形成侧壁、及形成于所述基板上方的收容腔，所述绝缘体贯穿所述基板的透光孔形成透光结构，所述基板的固晶部的背面露出于所述绝缘体外，所述LED芯片发出的光线通过所述透光结构散发至所述基板的背面一侧。
所述第一、第二电极引脚位于所述基板的条状方向两端，其中所述第一电极引脚与所述基板之间隔断，所述第二电极引脚与所述基板一体连接。
所述第一电极引脚与所述基板的相邻部位分别在条状方向两侧延伸出一体的料带将所述第一电极引脚与所述基板连接为一体。
所述料带呈矩形结构并将所述基板与所述第一电极引脚之间的隔断部围设于内。
所述基板与条状方向垂直的两侧部位完全包覆于所述绝缘体内。
所述绝缘体在所述基板的固晶部背面形成凹槽使所述固晶部背面露出于所述绝缘体外。
所述贯穿所述透光孔的绝缘体底面向下低于所述基板固晶部的背面。
所述基板在与条状方向垂直的两侧延伸出若干料带，所述第一、第二电极引脚的端部连接有料带。
所述若干LED芯片以串联的方式封装于所述基板的固晶部上并最终与所述第一、第二电极引脚连接。
所述基板采用金属铜材料制成。
相较于现有技术，本发明LED灯丝在所述基板上设置若干相互间隔的透光孔，并采用透明的塑胶材质注射成型贯穿所述透光孔构成所述绝缘体，使所述LED芯片散发的光线能够扩散至LED灯丝的背面，实现光源的360度传播。而采用金属材质的所述基板的若干透光孔之间则形成背面露出于所述透明材质的绝缘体外的固晶部，使封装于所述基板的固晶部上的LED芯片能够实现良好的散热性能，提高LED灯丝使用寿命。而所述绝缘体将所述条状基板的两侧部位完全包覆，使所述绝缘体与所述基板之间具有更好的结合性。所述与基板隔断的第一电极引脚与所述基板的外侧均延伸出一体的料带，使所述第一电极引脚能够与所述基板一体冲压形成并极大地方便了后续的制造流程。
附图说明
图1为本发明LED灯丝的正面侧视图及其局部放大图。
图2为本发明LED灯丝的背面视图及其局部放大图。
图3为本发明LED灯丝的基板的正面视图。
图4为本发明LED灯丝的基板连接有料带时的正面视图及其局部放大图。
图5为本发明LED灯丝沿图1所示A-A虚线的剖视图。
图6为本发明LED灯丝沿图1所示B-B虚线的剖视图。
具体实施方式
请参阅图1所示，本发明LED灯丝包括基板10、与所述基板10一体成型的绝缘体20、封装于所述基板10上的LED芯片40、及第一、第二电极引脚31,32。
请参阅图4、图5所示，所述基板10采用金属材质并呈长条状结构设计，所述基板10在条状方向上设置有若干相互间隔的透光孔11，所述若干透光孔11之间形成若干固晶部13，所述基板10在条状方向两侧设有若干料带连接部12。所述基板10两端分别设有第一、第二电极引脚31,32，其中第二电极引脚32与所述基板10为一体连接结构，所述第一电极引脚31与基板10隔离断开。所述基板10在条状方向两侧沿垂直所述条状方向延伸出料带52，所述第一、第二电极引脚31，32末端也连接有料带54,51。所述与基板10断开的第一电极引脚31与所述基板10在相邻处分别向外延伸形成将所述第一电极引脚31与所述基板10连接为一体的料带53，如此，使所述基板10与所述第一电极引脚31通过料带53连接为一体便于后续的一体成型工艺。所述料带53呈矩形结构将所述基板10与第一电极引脚31之间的隔断部（未标号）围设于内。所述基板10材料的优选方式为铜材。
请参阅图1、图2、图5、及图6所示，所述绝缘体20与所述基板10、第一、第二电极引脚31,32一体成型，所述绝缘体20采用透明塑胶材料制成以便于透光性。所述绝缘体20包括有固持所述基板10的基部21、自所述基部21边缘部分向上延伸形成的侧壁22、及由所述基部21、侧壁22围设成的芯片收容腔23。
所述LED芯片40封装于所述基板10的若干固晶部13上，并通过串联的方式连接于所述第一、第二电极引脚31,32上，每个LED芯片40之间间隔着所述基板10的透光孔11。
所述绝缘体20一体成型时于所述基板10上时，所述塑胶材质透过所述基板10上的若干透光孔11进入基板10的另一侧，同时将所述基板10的条状方向的两侧部位15完全包覆于所述绝缘体20内以加强固持。所述基板10的固晶部13的背面14则露出于所述绝缘体20外，如此，可以使封装于所述固晶部13上的LED芯片40获得良好的散热性能，而所述金属材质的基板10也具有良好的导热、散热性能。所述绝缘体20在背面的固晶部13上形成有凹槽24，而所述凹槽24之间则为所述透明塑胶贯穿所述透光孔11形成透光结构，如此，所述LED芯片40散发的光线能够通过所述透光结构散发至LED灯丝的背面，使所述LED芯片40的光线从四面扩散。
所述料带结构51,52,53,54在所述绝缘体20一体成型后切除。
本发明的LED灯丝在所述基板10上设置若干相互间隔的透光孔11，并采用透明的塑胶材质注射成型贯穿所述透光孔11构成所述绝缘体20，使所述LED芯片散发的光线能够扩散至LED灯丝的背面，实现光源的360度传播。而采用金属材质的所述基板10的若干透光孔11之间则形成背面露出于所述透明材质的绝缘体20外的固晶部13，使封装于所述基板10的固晶部13上的LED芯片40能够实现良好的散热性能，提高LED灯丝使用寿命。而所述绝缘体20将所述条状基板10的两侧部位完全包覆，使所述绝缘体20与所述基板10之间具有更好的结合性。所述与基板10隔断的第一电极引脚31与所述基板10的外侧均延伸出一体的料带53，使所述第一电极引脚31能够与所述基板10一体冲压形成并极大地方便了后续的制造流程。

Claims (10)

1.一种LED灯丝，呈长条状结构，其特征在于：包括采用金属材质的基板、与所述基板一体成型的采用透明材质的绝缘体、封装于所述基板上的LED芯片、及第一、第二电极引脚，所述基板上有若干间隔设置的透光孔，所述相邻的每两个透光孔之间形成用于封装所述LED芯片的固晶部，所述绝缘体包括包覆所述基板的基部、自所述基部边缘向上延伸形成侧壁、及形成于所述基板上方的收容腔，所述绝缘体贯穿所述基板的透光孔形成透光结构，所述基板的固晶部的背面露出于所述绝缘体外，所述LED芯片发出的光线通过所述透光结构散发至所述基板的背面一侧。
2.如权利要求1所述的LED灯丝，其特征在于：所述第一、第二电极引脚位于所述基板的条状方向两端，其中所述第一电极引脚与所述基板之间隔断，所述第二电极引脚与所述基板一体连接。
3. 如权利要求2所述的LED灯丝，其特征在于：所述第一电极引脚与所述基板的相邻部位分别在条状方向两侧延伸出一体的料带将所述第一电极引脚与所述基板连接为一体。
4. 如权利要求3所述的LED灯丝，其特征在于：所述料带呈矩形结构并将所述基板与所述第一电极引脚之间的隔断部围设于内。
5. 如权利要求1所述的LED灯丝，其特征在于：所述基板与条状方向垂直的两侧部位完全包覆于所述绝缘体内。
6. 如权利要求5所述的LED灯丝，其特征在于：所述绝缘体在所述基板的固晶部背面形成凹槽使所述固晶部背面露出于所述绝缘体外。
7. 如权利要求6所述的LED灯丝，其特征在于：所述贯穿所述透光孔的绝缘体底面向下低于所述基板固晶部的背面。
8. 如权利要求1所述的LED灯丝，其特征在于：所述基板在与条状方向垂直的两侧延伸出若干料带，所述第一、第二电极引脚的端部连接有料带。
9. 如权利要求1所述的LED灯丝，其特征在于：所述若干LED芯片以串联的方式封装于所述基板的固晶部上并最终与所述第一、第二电极引脚连接。
10. 如权利要求1所述的LED灯丝，其特征在于：所述基板采用金属铜材料制成。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600174A (zh) * 2014-12-17 2015-05-06 东莞市日为电子有限公司 一种led灯丝及其制作方法
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CN104600174A (zh) * 2014-12-17 2015-05-06 东莞市日为电子有限公司 一种led灯丝及其制作方法
CN104600174B (zh) * 2014-12-17 2017-05-24 东莞市日为电子有限公司 一种led灯丝及其制作方法
CN105098032A (zh) * 2015-07-17 2015-11-25 开发晶照明（厦门）有限公司 Led灯丝及具有该led灯丝的led灯泡
CN105098032B (zh) * 2015-07-17 2018-10-16 开发晶照明（厦门）有限公司 Led灯丝及具有该led灯丝的led灯泡
CN109838702A (zh) * 2017-11-29 2019-06-04 东莞市恩瑞精密电子有限公司 立体光源及线性光源的制作方法
CN109838702B (zh) * 2017-11-29 2020-10-20 东莞市恩瑞精密电子有限公司 立体光源及线性光源的制作方法
WO2023185101A1 (zh) * 2022-03-27 2023-10-05 深圳市美矽微半导体有限公司 一种 led 载板及其显示设备

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