CN104199135A - Long-focus deep-sector partition photon sieve for laser direct writing - Google Patents
Long-focus deep-sector partition photon sieve for laser direct writing Download PDFInfo
- Publication number
- CN104199135A CN104199135A CN201410478006.XA CN201410478006A CN104199135A CN 104199135 A CN104199135 A CN 104199135A CN 201410478006 A CN201410478006 A CN 201410478006A CN 104199135 A CN104199135 A CN 104199135A
- Authority
- CN
- China
- Prior art keywords
- sector
- focal length
- photon screen
- focus
- photon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a kind of Diode laser fanned partition photon screens for laser direct-writing. The photon sieve structure includes light-transmissive substrates and the opaque metallic film that is plated in the light-transmissive substrates, multiple light transmission circular holes are distributed on the opaque metallic film, the light transmission circular hole is distributed in ring-band shape, and formula rmn2=2nfmn λ+n2 λ 2 is pressed in distribution, and wherein rmn is girdle radius; N is the number of rings of annulus where circular hole; Fmn is focal length corresponding to the n-th ring in the sector m; λ is wavelength. The diameter of loophole on corresponding rmn is
Wherein wmn is annulus width; λ is wavelength; Fmn is focal length corresponding to the n-th ring in the sector m; Rmn is girdle radius. The present invention breaks through the thought of original fixed-focus design, is directed in the case where not influencing resolving power, is designed using photon screen fanned partition, realizes that multifocal partly overlaps, and effective increasing depth of focus lays the foundation for the functionization of photon screen direct-write photoetching.
Description
Technical field
The present invention relates to optical element design field, relate in particular to a kind of photon screen structure, utilize fanned partition to realize the method for the long depth of focus of photon screen.
Background technology
At present traditional optical projection type photoetching technique due to expensive mask costs, lack the transmission material, the wavelength that are applied to shorter optical maser wavelength and further shorten the impact of the factors such as a series of technical barriers of bringing, be faced with huge cost and technological challenge.
Photon screen, as the novel diffraction optical element of one, is to be proposed on the basis of conventional wave strap by people such as L Kip..It is with the endless belt that is distributed in a series of printing opacity apertures on zone plate endless belt and replaces zone plates, aperture be centered close to zone plate printing opacity endless belt center and stochastic distribution, its diameter changes with respective rings bandwidth.Light beam arrives diffraction focus after by each aperture, and their optical path difference is identical or differ the integral multiple of wavelength, through the relevant superposition of diffraction, forms the focus that high-resolution focuses on.
Based on this feature of photon screen, various countries scholar is devoted to about the structural design of photon screen and applied research, and has obtained a series of theory and experimental result.2003, the people such as the Rajesh Menon of Massachusetts Institute Technology published an article, and have provided the concrete application example of photon screen in etching system.Within 2005, Microelectronics Institute of the Chinese Academy of Sciences carries out photon screen Study on focusing characteristic, and within 2008, Photoelectric Technology Inst., Chinese Academy of Sciences has proposed photon screen application in laser direct-write photoetching system as diffraction concentrating element.
Photon screen is for laser direct-writing, and Resolution and focal depth is crucial, and from photolithography resolution formula, high resolution must cause reducing of effective depth of focus, therefore, and under the condition of superelevation photolithography resolution, how increasing depth of focus, has become the key issue of this photoetching method.
The present invention proposes a kind of photon screen structure, utilize fanned partition to realize the method for the long depth of focus of photon screen, this photon screen is applied to laser direct-writing, laser direct writing equipment is there is simultaneously to the advantages such as high resolution, low cost, high efficiency, therefore will there is significant advantage in Next Generation Lithography competition, the capability of independent innovation that promotes China's technical field of lithography research will be had to strategic importance.Meanwhile, can greatly shorten the gap of China's microelectronic industry and advanced country, China's microelectronic industry was reached advanced world standards and established solid theory and experiment basis in 21st century.
Summary of the invention
The technical issues that need to address of the present invention are just to provide a kind of long depth of focus fanned partition photon screen for laser direct-writing, in the situation that photon screen focusing resolving power is certain, obtain larger depth of focus.
For addressing the above problem, the present invention adopts following technical scheme:
A kind of long depth of focus fanned partition photon screen for laser direct-writing, this photon screen is transparent substrate of glass, in this transparent substrate of glass, plate light tight metallic film, on light tight metallic film, there are multiple printing opacity small sircle holes, this printing opacity small sircle hole is ring-band shape and distributes, and described a kind of long depth of focus fanned partition photon screen design process for laser direct-writing is as follows:
(1) this photon screen adopts fanned partition structure, according to certain subtended angle
photon screen is divided into Max sector, and area principle is
wherein Max is total sector number;
for the subtended angle of photon screen fanned partition;
choose and should be able to ensure that Max is integer.Sector indicates according to polar mode to be determined, and subtended angle is
sector be No. 1 sector, subtended angle is
sector be No. 2 sectors, until subtended angle is
sector be Max sector.
(2) each sector correspondence focal distance f separately
1, f
2... f
2mf
max, m is more than or equal to 1 and be less than or equal to the integer of Max, adopts the traditional design method of photon screen according to each sector, obtains the size and location of photon screen aperture in each sector.Endless belt meets formula r
m,n 2=2nf
m,nλ+n
2λ
2wherein r
m, nfor girdle radius; N is the number of rings of circular hole place endless belt, and innermost ring is the 1st ring; f
m, nbe that in m sector, n encircles corresponding focal length; λ is wavelength.Corresponding r
mnon the diameter of light hole be d
m, wherein d
m, nrepresent that n in m sector encircles the diameter of corresponding light hole; w
mnfor endless belt width; λ is wavelength; f
m, nbe that in m sector, n encircles corresponding focal length; r
m, nfor girdle radius.
(3) each sector correspondence focal length separately, for ensure long depth of focus and focusing quality simultaneously, the focal length value of setting an interval d sector equates, i.e. f
m, n=f
(m+d), n, f
m, nbe that in m sector, n encircles corresponding focal length, f
(m+d), nbe that in m+d sector, n encircles corresponding focal length.
(4) focal length value corresponding to each sector is to repeat in the cycle according to d, but focal length value is equal difference ascending series, i.e. △=f within the single cycle
2-f
1=f
3-f
2=...=f
d-f
d-1, △ is focal length increment size; f
dbe the corresponding focal length value in d sector, d is design designated value.
(5) focal length increment size △=DOF/K, wherein DOF is photon screen depth of focus; K is the focal-depth expanding factor, the basis of design actual needs of numerical value K.
Compared with existing method for designing, the beneficial effect that technical solution of the present invention produces is:
In the situation that not reducing photon screen resolving power and improving difficulty of processing, the design's method, effectively increasing depth of focus, for the enforcement of photon screen direct-write photoetching lays the foundation.
Brief description of the drawings
Fig. 1 is the structural representation of photon screen of the present invention fanned partition;
Fig. 2 be photon screen of the present invention fanned partition pass through aperture design diagram;
Fig. 3 is photon screen schematic diagram of the present invention.
Embodiment
What the present invention described is a kind of fanned partition method that adopts, thereby realize a kind of long depth of focus photon screen for laser direct-writing, the method has universality, but for making the object, technical solutions and advantages of the present invention clearer, below in conjunction with instantiation and special case, and with reference to accompanying drawing, the present invention is described in more detail.
Photon screen structure provided by the invention, comprises light-transmissive substrates and is plated in the light tight metallic film in this light-transmissive substrates, is distributed with multiple printing opacity circular holes on described light tight metallic film, and this printing opacity circular hole is ring-band shape and distributes.The material of light-transmissive substrates can be the light transmissive materials such as simple glass or organic glass, and the material of light tight metallic film can be the light tight metals such as gold, aluminium or copper.
As shown in Figure 1, be the structural representation of photon screen of the present invention fanned partition, for convenience, the present invention sets subtended angle
according to area principle
photon screen is divided into 12 sectors.Sector indicates according to polar mode to be determined, and the sector that subtended angle is (0 °～30 °) is No. 1 sector, the sector that subtended angle is (30 °～60 °) is No. 2 sectors, the sector that subtended angle is (60 °～90 °) is No. 3 sectors, the sector that subtended angle is (90 °～120 °) is No. 4 sectors, the sector that subtended angle is (120 °～150 °) is No. 5 sectors, the sector that subtended angle is (150 °～180 °) is No. 6 sectors, the sector that subtended angle is (180 °～210 °) is No. 7 sectors, the sector that subtended angle is (210 °～240 °) is No. 8 sectors, the sector that subtended angle is (240 °～270 °) is No. 9 sectors, the sector that subtended angle is (270 °～300 °) is No. 10 sectors, the sector that subtended angle is (300 °～330 °) is No. 11 sectors, the sector that subtended angle is (330 °～360 °) is No. 12 sectors.
As shown in Figure 2, each sector correspondence focal distance f separately
1, f
2, f
3, f
4, f
5, f
6, f
7, f
8, f
9, f
10, f
11, f
12adopt the traditional design method of photon screen according to each sector, obtain the size and location of photon screen aperture in each sector.Endless belt meets formula r
m,n 2=2nf
m,nλ+n
2λ
2wherein r
m, nfor girdle radius; N is the number of rings of circular hole place endless belt; f
m, nbe that in m sector, n encircles corresponding focal length; λ is wavelength.Corresponding r
m, non the diameter of light hole be
wherein d
m, nrepresent that n in m sector encircles the diameter of corresponding light hole; w
m, nfor endless belt width; λ is wavelength; f
m, nbe that in m sector, n encircles corresponding focal length; r
m, nfor girdle radius.Each sector correspondence focal length separately, for ensure long depth of focus and focusing quality simultaneously, the focal length value of setting an interval d sector equates, sets d=3 here, i.e. f
1=f
4=f
7=f
10; f
2=f
5=f
8=f
11; f
3=f
6=f
9=f
12.As shown in Figure 2, focal length value corresponding to each sector repeated taking 3 as cycle, but focal length value is equal difference ascending series, i.e. △=f within the single cycle
2-f
1=f
3-f
2.△ is focal length increment size.From formula △=DOF/K, △ is determined by photon screen depth of focus DOF; K is the focal-depth expanding factor, and the present embodiment is set K=2.
Fig. 3 is photon screen structural representation of the present invention, and wherein white hole is printing opacity circular hole 2; Black region is light tight region 1, i.e. lighttight crome metal film.Some printing opacity circular holes 2 distribute on described lighttight crome metal film 1; Described circular hole is ring-band shape and distributes.
Emulation and experiment that the present invention carries out according to above design show, reasonably design focal length increment △, can, in the situation that not affecting resolving power, obtain great increasing depth of focus.
The content that the present invention does not elaborate is those skilled in the art's public general knowledge.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these amendments are also considered as protection scope of the present invention.
Claims (5)
1. for a long depth of focus fanned partition photon screen for laser direct-writing, it is characterized in that: described photon screen adopts fanned partition structure, according to certain subtended angle
photon screen is divided into Max sector, and area principle is
wherein Max is total sector number;
for the subtended angle of photon screen fanned partition;
choose and should be able to ensure that Max is integer, sector indicates according to polar mode to be determined, subtended angle is
sector be No. 1 sector, subtended angle is
sector be No. 2 sectors, until subtended angle is
sector be Max sector.
2. a kind of long depth of focus fanned partition photon screen for laser direct-writing according to claim 1, is characterized in that: each sector correspondence focal distance f separately
1, f
2... f
2mf
max, m is more than or equal to 1 and be less than or equal to the integer of Max, adopts the method for designing of photon screen according to each sector, obtains the size and location of photon screen aperture in each sector; Endless belt meets formula r
m,n 2=2nf
m,nλ+n
2λ
2wherein r
m, nfor girdle radius; N is the number of rings of circular hole place endless belt, and innermost ring is the 1st ring; f
m,n is that in m sector, n encircles corresponding focal length; λ is wavelength; Corresponding r
m, non the diameter of light hole be
wherein w
m, nfor endless belt width; λ is wavelength; f
m, nbe that in m sector, n encircles corresponding focal length; r
m, nfor girdle radius.
3. a kind of long depth of focus fanned partition photon screen for laser direct-writing according to claim 2, is characterized in that: each sector correspondence focal length separately, for ensure long depth of focus and focusing quality simultaneously, the focal length value of setting an interval d sector equates, i.e. f
m, n=f
(m+d), n, f
m, nbe that in m sector, n encircles corresponding focal length, f
(m+d), nbe that in m+d sector, n encircles corresponding focal length.
4. a kind of long depth of focus fanned partition photon screen for laser direct-writing according to claim 3, is characterized in that: focal length value corresponding to each sector is to repeat in the cycle according to d, but focal length value is equal difference ascending series, i.e. △=f within the single cycle
2-f
1=f
3-f
2=...=f
d-f
d-1, △ is focal length increment size; f
dbe the corresponding focal length value in d sector, d is design designated value.
5. a kind of long depth of focus fanned partition photon screen for laser direct-writing according to claim 4, is characterized in that: focal length increment size △=DOF/K, and wherein DOF is photon screen depth of focus; K is the focal-depth expanding factor, the basis of design actual needs of numerical value K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410478006.XA CN104199135B (en) | 2014-09-18 | 2014-09-18 | A kind of Diode laser fanned partition photon screen for laser direct-writing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410478006.XA CN104199135B (en) | 2014-09-18 | 2014-09-18 | A kind of Diode laser fanned partition photon screen for laser direct-writing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104199135A true CN104199135A (en) | 2014-12-10 |
| CN104199135B CN104199135B (en) | 2016-09-21 |
Family
ID=52084445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410478006.XA Expired - Fee Related CN104199135B (en) | 2014-09-18 | 2014-09-18 | A kind of Diode laser fanned partition photon screen for laser direct-writing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104199135B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104656174A (en) * | 2015-03-10 | 2015-05-27 | 西华大学 | Subwavelength photon sieve fly-eye |
| CN106054297A (en) * | 2016-08-01 | 2016-10-26 | 苏州大学 | Large field diffraction photon sieve |
| CN108761606A (en) * | 2018-05-30 | 2018-11-06 | 苏州大学 | A kind of production method of splicing large-diameter photon sieve |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050046944A1 (en) * | 2003-08-29 | 2005-03-03 | Shenderova Olga Alexander | Imaging devices and methods |
| CN102004276A (en) * | 2010-08-25 | 2011-04-06 | 中国科学院深圳先进技术研究院 | Photon sieve phase contrast objective lens, manufacturing method and imaging method |
| CN102053294A (en) * | 2011-01-20 | 2011-05-11 | 中国科学院光电技术研究所 | Interlaced type photon sieve |
| CN102053295A (en) * | 2011-01-20 | 2011-05-11 | 中国科学院光电技术研究所 | Compound type photon sieve |
-
2014
- 2014-09-18 CN CN201410478006.XA patent/CN104199135B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050046944A1 (en) * | 2003-08-29 | 2005-03-03 | Shenderova Olga Alexander | Imaging devices and methods |
| CN102004276A (en) * | 2010-08-25 | 2011-04-06 | 中国科学院深圳先进技术研究院 | Photon sieve phase contrast objective lens, manufacturing method and imaging method |
| CN102053294A (en) * | 2011-01-20 | 2011-05-11 | 中国科学院光电技术研究所 | Interlaced type photon sieve |
| CN102053295A (en) * | 2011-01-20 | 2011-05-11 | 中国科学院光电技术研究所 | Compound type photon sieve |
Non-Patent Citations (4)
| Title |
|---|
| CHONGXI ZHOU ET.AL: "Experimental study of a multivavelength photon sieve designed……", 《APPLIED OPTICS》 * |
| 何渝等: "光子筛成像技术研究进展", 《激光与光电子学进展》 * |
| 唐燕等: "大数值孔径光子筛偏振特性研究", 《光学学报》 * |
| 蒋文波等: "基于矢量衍射理论的振幅型光子筛设计与分析", 《光学学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104656174A (en) * | 2015-03-10 | 2015-05-27 | 西华大学 | Subwavelength photon sieve fly-eye |
| CN106054297A (en) * | 2016-08-01 | 2016-10-26 | 苏州大学 | Large field diffraction photon sieve |
| CN108761606A (en) * | 2018-05-30 | 2018-11-06 | 苏州大学 | A kind of production method of splicing large-diameter photon sieve |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104199135B (en) | 2016-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104898195B (en) | Generalized Fibonacci zone plate | |
| US20160085104A1 (en) | Mask, spacer produced by using the mask and method for producing spacer using the mask | |
| CN104199135A (en) | Long-focus deep-sector partition photon sieve for laser direct writing | |
| CN101986206B (en) | Method for utilizing functional mask board to manufacture mask substrate for solidifying sealing glue | |
| WO2013023357A1 (en) | Composite photon sieve projection lithography system | |
| JP2012234135A (en) | Liquid crystal lens | |
| EP2818925A1 (en) | Mask | |
| CN107765513A (en) | A kind of ultraviolet LED exposure system for liquid crystal panel manufacture | |
| CN102289157B (en) | Projection photoetching system with composite photon sieve | |
| US20150362833A1 (en) | Mask plate and method of patterning using the mask plate | |
| CN104199136B (en) | A kind of Diode laser photon screen | |
| CN104237984A (en) | Production method for high-precision multistep microlens array | |
| CN104765088A (en) | Linear variable-area wave zone plate with feature of long focal length | |
| CN101881844B (en) | Girdle photon sieve and manufacturing method thereof | |
| CN103293677B (en) | Light uniforming device and preparation method thereof | |
| CN102053295B (en) | Compound type photon sieve | |
| CN102497738A (en) | Method for manufacturing inner core plate by using outer semi-automatic exposure machine | |
| CN104779306B (en) | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure | |
| CN102681059A (en) | Photon sieve structure | |
| CN102053294B (en) | Interlaced type photon sieve | |
| CN204374608U (en) | A kind of mask plate | |
| CN103955092A (en) | Backlight module and display panel | |
| CN103091749A (en) | High-transmittance photon sieve | |
| CN106405700B (en) | A kind of multiple zone structural phase-type zone plate | |
| CN102073084A (en) | Square hole photon screen and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160921 Termination date: 20210918 |