CN104195576A - Dry etching cleaning and stripping protective liquid - Google Patents
Dry etching cleaning and stripping protective liquid Download PDFInfo
- Publication number
- CN104195576A CN104195576A CN201410457140.1A CN201410457140A CN104195576A CN 104195576 A CN104195576 A CN 104195576A CN 201410457140 A CN201410457140 A CN 201410457140A CN 104195576 A CN104195576 A CN 104195576A
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- CN
- China
- Prior art keywords
- dry etching
- protective liquid
- stripping protective
- clean stripping
- organic solvent
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to dry etching cleaning and stripping protective liquid which mainly consists of ethanol amine, amino acids and an organic solvent, wherein a ratio of ethanol amine to amino acids to the organic solvent is 20-30:0.1-10:65-75. The dry etching cleaning and stripping protective liquid disclosed by the invention has the beneficial effects that corrosion to aluminum metal can be simply eliminated or reduced in a dry etching cleaning agent or stripping fluid, an adverse effect to the environment is avoided; the dry etching cleaning and stripping protective liquid is simple in formula, easy to mix and low in cost; and the use temperature of the dry etching cleaning and stripping protective liquid is easy to control. According to the test, the dry etching cleaning and stripping protective liquid is safe and non-toxic, can prevent or reduce corrosion to the aluminum metal in the dry etching process and meet the environment-friendly requirement and is simple in formula, easy to mix and low in cost; and the use temperature of the dry etching cleaning and stripping protective liquid is easy to control.
Description
Technical field
The present invention relates to dry etching field, specifically dry etching clean stripping protective liquid.
Background technology
Metal etch (etching) is by materials'use chemical reaction or physical shock effect and the technology removing.Metal etch technology can be divided into wet etching (wet etching) and dry etching (dry etching) two classes.
Conventionally indication metal etch also claims photochemistry metal etch (photochemical etching); after referring to make a plate, develop by exposure; protective membrane that will metal etch region is removed; in the time of metal etch, contact chemical solution; reach the effect of dissolved corrosion, form effect concavo-convex or hollow out moulding.Can be used to the earliest manufacture the printing such as copperplate, photo zincography embossing plate, be also used in widely weight reduction (Weight Reduction) instrument panelling, nameplate and traditional processing method are difficult to the processing of the thin type workpiece of processing etc.; Develop through constantly improvement and processing unit, can also be used for the processing of aviation, machinery, chemical industry electronics sheet parts precision metallic etching products, especially on manufacture of semiconductor, metal etch indispensable technology especially.
Technical in aluminum metal dry etching, the surface distress of aluminum metal is a serious problem, the industrial corrosion that has now several modes to prevent or reduce aluminum metal, the one, make protective agent with gentle material, but by cannot thoroughly removing residual substance, the 2nd, with anti-corruption dose, but the anti-corruption agent material passing through is virose, the 3rd, in clean stripping process, add PH and control material and reduce extent of corrosion, but like this degree for the treatment of will more complicated.At present also there is no a kind of natural chemical products, can reach and prevent or reduce the corrosion of aluminum metal in dry etch process, all fairly simple Protection Products of the special composition of dry etching clean stripping that again can meet the requirement of environmental protection, production technique.
Summary of the invention
The present invention is just for above technical problem, a kind of natural chemical products is provided, can reach and prevent or reduce the corrosion of aluminum metal in dry etch process, all fairly simple Protection Products of the special composition of dry etching clean stripping that again can meet the requirement of environmental protection, production technique.
Dry etching clean stripping protective liquid, is mainly made up of thanomin, amino acid, organic solvent, and wherein, the ratio between each component is thanomin: amino acid: organic solvent=20～30:0.1～10:65～75.Organic solvent forms for one or both organic solvents mix.Organic solvent is dimethyl sulfoxide (DMSO).Organic solvent is Diethylene Glycol butyl ether.Amino acid is oleic acid.The use temperature of dry etching clean stripping protective liquid is 50 DEG C～90 DEG C.
The present invention also provides the preparation method of dry etching clean stripping protective liquid, comprises the following steps: 1, prepare mixed solvent, by one or two kind of solvent put into tempering tank; 2, add thanomin, in the mixed solvent in step 1, ventilation stirring limit, limit adds thanomin; 3, add amino acid, in the mixing solutions in step 2, add amino acid, continue to ventilate and stir 30 minutes; 4, the mixing solutions in step 2 is filtered through 0.2 μ m.
The beneficial effect of dry etching clean stripping protective liquid of the present invention mainly contains: in dry etching clean-out system or stripping liquid, can eliminate very simply or reduce the corrosion of aluminum metal, and can not cause detrimentally affect to environment, formula is simple simultaneously, easily mix, and with low cost, use temperature is easily controlled.
Through evidence, other organic acids of some is had-COOH functional group replace amino acid of the present invention, although also can reach part requirement, but due to its source and and metal between many-sided reason such as combination, over-all properties is slightly poorer than adopting amino acid of the present invention, therefore, the present invention selects amino acid as protective liquid main component.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment
By methyl sulfoxide: Diethylene Glycol butyl ether: thanomin: oleic acid is ready in the ratio of 45:28:25:2, first methyl sulfoxide and Diethylene Glycol butyl ether are prepared into mixed solvent, in the nonmetal single material tempering tank with ventilation installation, fully mix, then thanomin is added in the mixed solvent in tempering tank in the situation that ventilating stirring, finally oleic acid is added in the situation that ventilating stirring to tempering tank, continue to ventilate and stir after 30 minutes, packed for standby use after 0.2 μ m filters.
Through test, this dry etching clean stripping protective liquid safety non-toxic, can reach and prevent or reduce the corrosion of aluminum metal in dry etch process, again can meet the requirement of environmental protection, and formula is simple simultaneously, easily mix, and also with low cost, use temperature is easily controlled.
Claims (8)
1. dry etching clean stripping protective liquid, is mainly made up of thanomin, amino acid, organic solvent, and wherein, the ratio between each component is thanomin: amino acid: organic solvent=20～30:0.1～10:65～75.
2. dry etching clean stripping protective liquid according to claim 1, is characterized in that described organic solvent mixes composition for one or both organic solvents.
3. dry etching clean stripping protective liquid according to claim 1, is characterized in that described organic solvent is dimethyl sulfoxide (DMSO).
4. dry etching clean stripping protective liquid according to claim 1, is characterized in that described organic solvent is Diethylene Glycol butyl ether.
5. dry etching clean stripping protective liquid according to claim 1, is characterized in that described amino acid is oleic acid.
6. according to dry etching clean stripping protective liquid described in claim 1, the use temperature that it is characterized in that described dry etching clean stripping protective liquid is 50 DEG C～90 DEG C.
7. the preparation method of dry etching clean stripping protective liquid, comprises the following steps: 1, prepare mixed solvent, by one or two kind of solvent put into tempering tank; 2, add thanomin, in the mixed solvent in step 1, ventilation stirring limit, limit adds thanomin; 3, add amino acid, in the mixing solutions in step 2, add amino acid, continue to ventilate and stir 30 minutes; 4, the mixing solutions in step 2 is filtered through 0.2 μ m.
8. the preparation method of dry etching clean stripping protective liquid according to claim 7, is characterized in that described step 1, step 2, step 3 all carry out in the tempering tank of nonmetal single material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410457140.1A CN104195576A (en) | 2014-09-10 | 2014-09-10 | Dry etching cleaning and stripping protective liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410457140.1A CN104195576A (en) | 2014-09-10 | 2014-09-10 | Dry etching cleaning and stripping protective liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104195576A true CN104195576A (en) | 2014-12-10 |
Family
ID=52080935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410457140.1A Pending CN104195576A (en) | 2014-09-10 | 2014-09-10 | Dry etching cleaning and stripping protective liquid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104195576A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637270A (en) * | 2016-12-27 | 2017-05-10 | 昆山欣谷微电子材料有限公司 | Dry etching-cleaning and stripping protection liquid |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743965A (en) * | 2005-09-30 | 2006-03-08 | 石深泉 | Environmental-protection type regenerative PS plate ink and photoresists stripping agent and its preparing method |
| CN102827707A (en) * | 2011-06-16 | 2012-12-19 | 安集微电子科技(上海)有限公司 | Plasma etching residue cleaning fluid |
| US20140213498A1 (en) * | 2002-12-20 | 2014-07-31 | Advanced Technology Materials, Inc. | Photoresist removal |
-
2014
- 2014-09-10 CN CN201410457140.1A patent/CN104195576A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140213498A1 (en) * | 2002-12-20 | 2014-07-31 | Advanced Technology Materials, Inc. | Photoresist removal |
| CN1743965A (en) * | 2005-09-30 | 2006-03-08 | 石深泉 | Environmental-protection type regenerative PS plate ink and photoresists stripping agent and its preparing method |
| CN102827707A (en) * | 2011-06-16 | 2012-12-19 | 安集微电子科技(上海)有限公司 | Plasma etching residue cleaning fluid |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637270A (en) * | 2016-12-27 | 2017-05-10 | 昆山欣谷微电子材料有限公司 | Dry etching-cleaning and stripping protection liquid |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141210 |
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| RJ01 | Rejection of invention patent application after publication |