CN104184422A - Driving amplifier circuit of crystal oscillator and corresponding crystal oscillator circuit - Google Patents
Driving amplifier circuit of crystal oscillator and corresponding crystal oscillator circuit Download PDFInfo
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- CN104184422A CN104184422A CN201310191321.XA CN201310191321A CN104184422A CN 104184422 A CN104184422 A CN 104184422A CN 201310191321 A CN201310191321 A CN 201310191321A CN 104184422 A CN104184422 A CN 104184422A
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Abstract
The invention relates to a driving amplifier circuit of a crystal oscillator. A grid electrode of an MOS (Metal Oxide Semiconductor) tube (201) is connected with an input end (OSCI (Oscillation Input)) of the amplifier circuit; a drain electrode of the MOS tube (201) is connected with an output end (OSCO(Oscillation Output)) of the amplifier circuit; a source electrode and a substrate of the MOS tube (201) are earthed; a feedback resistance module (100) is connected between the grid electrode and the drain electrode of the MOS tube (201) in a bridging mode; the drain electrode of the MOS tube (201) is connected with a power supply (VDD) through a current source (260). By adopting the structures of the driving amplifier circuit of the crystal oscillator and the corresponding crystal oscillator circuit, the range of the operating voltage is wide and the service life of batteries of battery power supply products is prolonged; lower power supply voltage is adopted, and the power consumption of the circuit system is reduced; when the power supply voltage is high, the resonance of the oscillator can be prevented from being positioned on high-order resonant frequency of an external resonator of the circuit, and the reliability of the circuit system is enhanced; the structure is simple and practical, and the application range is wider.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, particularly crystal-oscillator circuit technical field, specifically refers to a kind of crystal oscillator driving amplifier circuit and corresponding crystal-oscillator circuit.
Background technology
In existing CMOS integrated circuit, crystal oscillator or ceramic resonator drive circuit adopt CMOS structural design more, adopt the structure for amplifying of the CMOS complementary circuit structures such as inverter, NOR gate or NAND gate as crystal oscillator, specifically refer to shown in Fig. 1 a～1d.Wherein, mostly adopt CMOS structure for amplifying to drive crystal or ceramic resonator, the feature of this CMOS structure for amplifying is that vibration input port is connected with NMOS tube grid with the PMOS pipe in CMOS structure for amplifying simultaneously, this structure causes the minimum working power voltage of circuit can not be lower than the cut-in voltage sum of PMOS and NMOS, when supply voltage is lower than the cut-in voltage sum of PMOS pipe and NMOS pipe, the blocking of oscillator, circuit quits work.
The distinct disadvantage of such circuit structure is that starting of oscillation voltage and failure of oscillation voltage are obviously higher, and can cause excessively by force occurring self-excitation due to driving force in the time that supply voltage is high, and the frequency of oscillation of pierce circuit is the integral multiple of external resonant frequency of a crystal.Such as the starting of oscillation operating voltage of circuit on typical 0.5 μ m CMOS technique platform is 1.8V left and right, make circuit can not be operated in lower voltage; Become 5.1MHz and the frequency of oscillation of self-excited circuit may occur the external ceramic resonator that resonance frequency is 455kHz after supply voltage exceedes 3.5V, cause circuit function entanglement.
Existing CMOS amplification circuit structure DC point raises and linear rising with supply voltage, the minimum operating voltage of the complementary oscillator of CMOS is about the threshold voltage sum of NMOS pipe and PMOS pipe, be VTHP+VTHN, typical PMOS pipe threshold voltage is 0.7V～0.9V, the threshold voltage of typical NMOS pipe is 0.6V～0.8V, thereby the minimum operating voltage of the amplifier of CMOS structure is about 1.3V～1.7V.As a knowledge, the saturation current of metal-oxide-semiconductor is
overdrive voltage (the V of the drive current in the amplifying circuit of structure and metal-oxide-semiconductor
gs-V
th) square be directly proportional, along with supply voltage raises, drive current increases rapidly, very easily drives external resonator works in higher order resonances frequency, causes circuit function entanglement.
Summary of the invention
The object of the invention is to have overcome above-mentioned shortcoming of the prior art, a kind of operating voltage range that can obviously widen CMOS integrated circuit is provided, can extends the useful life of battery, oscillator generation resonance causes circuit function entanglement, simple and practical, stable and reliable working performance, scope of application crystal oscillator driving amplifier circuit and corresponding crystal oscillator circuit structure comparatively widely while avoiding high-pressure work.
In order to realize above-mentioned object, crystal oscillator driving amplifier circuit of the present invention and corresponding crystal oscillator circuit structure are as follows:
This crystal oscillator driving amplifier circuit, wherein, described amplifier circuit comprises metal-oxide-semiconductor, feedback resistance module and current source, the grid of described metal-oxide-semiconductor is connected with the input of this amplifier circuit, the drain electrode of this metal-oxide-semiconductor is connected with the output of this amplifier circuit, the equal ground connection of the source electrode of this metal-oxide-semiconductor and substrate, described feedback resistance module is connected across between the grid and drain electrode of described metal-oxide-semiconductor, and the drain electrode of this metal-oxide-semiconductor is connected with power vd D by described current source.
In an embodiment of the present invention, the feedback resistance module in this crystal oscillator driving amplifier circuit comprises a P channel MOS tube and the first N-channel MOS pipe.
In an embodiment of the present invention, the grounded-grid of a described P channel MOS tube, the source electrode of the one P channel MOS tube is connected with the input of described amplifier circuit, and the drain electrode of a P channel MOS tube is connected with the output of described amplifier circuit, the substrate of a described P channel MOS tube is connected with power vd D.
In an embodiment of the present invention, the grid of the first described N-channel MOS pipe is connected with power vd D, the source electrode of this first N-channel MOS pipe is connected with the input of described amplifier circuit, and the drain electrode of this first N-channel MOS pipe is connected with the output of described amplifier circuit, the substrate ground connection of the first described N-channel MOS pipe.
In an embodiment of the present invention, current source in this crystal oscillator driving amplifier circuit comprises the 2nd P channel MOS tube, the 3rd P channel MOS tube, the 4th P channel MOS tube, the second N-channel MOS pipe, the 3rd N-channel MOS pipe and resistance, the source electrode of the 2nd described P channel MOS tube is all connected with described power vd D with substrate, the grid of the 2nd P channel MOS tube is all connected with the drain electrode of described the second N-channel MOS pipe with drain electrode, and the grid of the 2nd P channel MOS tube respectively with the grid of described the 3rd P channel MOS tube, the grid of the 4th P channel MOS tube is all connected, the source electrode of the 3rd described P channel MOS tube is all connected with described power vd D with substrate, and the drain electrode of the 3rd P channel MOS tube is all connected with the drain and gate of described the 3rd N-channel MOS pipe respectively, the source electrode of the 4th described P channel MOS tube is all connected with described power vd D with substrate, and the drain electrode of the 4th P channel MOS tube is connected with the drain electrode of described metal-oxide-semiconductor, the substrate ground connection of the second described N-channel MOS pipe, the source electrode of this second N-channel MOS pipe is by described grounding through resistance, and the grid of this second N-channel MOS pipe is connected with the grid of the 3rd described N-channel MOS pipe, the source electrode of the 3rd described N-channel MOS pipe and the equal ground connection of substrate.
In another embodiment of the present invention, this has the crystal-oscillator circuit of above-mentioned amplifier circuit, wherein, also comprises frequency-selecting resonant circuit in described circuit, and described frequency-selecting resonant circuit is connected across between the input and output of described amplifier circuit.
In another embodiment of the present invention, frequency-selecting resonant circuit in this crystal oscillator circuit structure comprises resonator, the first electric capacity and the second electric capacity, described resonator is connected across between the input and output of described amplifier circuit, and the input of this amplifier circuit is by the first described capacity earth, and the output of this amplifier circuit is by the second described capacity earth.
In another embodiment of the present invention, the resonator in this crystal oscillator circuit structure can be crystal resonator or ceramic resonator.
Crystal oscillator driving amplifier circuit and the corresponding crystal-oscillator circuit of this invention are adopted, the form that adopts single tube to amplify due to the amplifying circuit in oscillator wherein, the direct current biasing level point of amplifying circuit is reduced to the threshold V T HN that is about a NMOS pipe, the saturation voltage drop of current source only needs 0.2V in theory, the minimum operating voltage of circuit is only VTHN+0.2V, thereby minimum operating voltage is about 0.8V～1.0V, significantly reduce minimum operating voltage; In the time that supply voltage uprises, wherein the load current of single-valve amplification circuit remains unchanged, DC point does not raise with the rising of supply voltage, therefore there is the wide feature of more existing CMOS structure amplifying circuit operating voltage range, extend the battery of powered battery product, adopt lower power supply voltage, reduced the power consumption of Circuits System; When supply voltage is high, can avoid oscillator resonance in the higher order resonances frequency of the external resonator of circuit, the reliability of intensifier circuit system, simple and practical, the scope of application is comparatively extensive.
Brief description of the drawings
Fig. 1 a, 1b, 1c and 1d are respectively the CMOS amplifying circuit schematic diagram of employing inverter of the prior art, NOR gate, NAND gate and tristate inverter.
Fig. 2 is crystal oscillator driving amplifier circuit theory diagrams of the present invention.
Fig. 3 is the circuit theory diagrams of the embodiment of Fig. 2.
Fig. 4 is crystal oscillator circuit structure schematic diagram of the present invention.
Embodiment
In order more clearly to understand technology contents of the present invention, describe in detail especially exemplified by following examples.
Refer to shown in Fig. 2 and Fig. 3, this crystal oscillator driving amplifier circuit, comprising metal-oxide-semiconductor 201, feedback resistance module 100 and current source 260, the grid of described metal-oxide-semiconductor 201 is connected with the input OSCI of this amplifier circuit, the drain electrode of this metal-oxide-semiconductor 201 is connected with the output OSCO of this amplifier circuit, the equal ground connection of the source electrode of this metal-oxide-semiconductor 201 and substrate, described feedback resistance module 100 is connected across between the grid and drain electrode of described metal-oxide-semiconductor 201, and the drain electrode of this metal-oxide-semiconductor 201 is connected with power vd D by described current source 260.
Wherein, described feedback resistance module 100 comprises a P channel MOS tube 101 and the first N-channel MOS pipe 102, the grounded-grid of a described P channel MOS tube 101, the source electrode of the one P channel MOS tube 101 is connected with the input OSCI of described amplifier circuit, and the drain electrode of a P channel MOS tube 101 is connected with the output OSCO of described amplifier circuit, and the substrate of a described P channel MOS tube 101 is connected with power vd D; The grid of the first described N-channel MOS pipe 102 is connected with power vd D, the source electrode of this first N-channel MOS pipe 102 is connected with the input OSCI of described amplifier circuit, and the drain electrode of this first N-channel MOS pipe 102 is connected with the output OSCO of described amplifier circuit, the substrate ground connection of the first described N-channel MOS pipe 102.
Simultaneously, described current source 260 comprises the 2nd P channel MOS tube 261, the 3rd P channel MOS tube 262, the 4th P channel MOS tube 263, the second N-channel MOS pipe 264, the 3rd N-channel MOS pipe 265 and resistance 266, the source electrode of the 2nd described P channel MOS tube 261 is all connected with described power vd D with substrate, the grid of the 2nd P channel MOS tube 261 is all connected with the drain electrode of described the second N-channel MOS pipe 264 with drain electrode, and the grid of the 2nd P channel MOS tube 261 respectively with the grid of described the 3rd P channel MOS tube 262, the grid of the 4th P channel MOS tube 263 is all connected, the source electrode of the 3rd described P channel MOS tube 262 is all connected with described power vd D with substrate, and the drain electrode of the 3rd P channel MOS tube 262 is all connected with the drain and gate of described the 3rd N-channel MOS pipe 265 respectively, the source electrode of the 4th described P channel MOS tube 263 is all connected with described power vd D with substrate, and the drain electrode of the 4th P channel MOS tube 263 is connected with the drain electrode of described metal-oxide-semiconductor 201, the substrate ground connection of the second described N-channel MOS pipe 264, the source electrode of this second N-channel MOS pipe 264 is by described resistance 266 ground connection, and the grid of this second N-channel MOS pipe 264 is connected with the grid of the 3rd described N-channel MOS pipe 265, the source electrode of the 3rd described N-channel MOS pipe 265 and the equal ground connection of substrate.
Refer to shown in Fig. 4, this has the crystal-oscillator circuit of above-mentioned amplifier circuit again, wherein also comprises frequency-selecting resonant circuit, and described frequency-selecting resonant circuit is connected across between the input OSCI and output OSCO of described amplifier circuit 200.
Wherein the frequency-selecting resonant circuit in this crystal oscillator circuit structure comprises resonator 300, the first electric capacity 400 and the second electric capacity 500, described resonator 300 is connected across between the input OSCI and output OSCO of described amplifier circuit 200, and the input OSCI of this amplifier circuit 200 is by the first described electric capacity 400 ground connection, the output OSCO of this amplifier circuit 200 is by the second described electric capacity 500 ground connection, meanwhile, this resonator 300 can be crystal resonator or ceramic resonator.
In the middle of reality is used, one embodiment of the invention adopts following structure:
This crystal-oscillator circuit comprises an amplifier circuit 200, the input OSCI of described amplifier connects electric capacity 400, the output OSCO of described amplifier connects electric capacity 500, between described input OSCI and output OSCO, connect feedback resistance module 100 resonator 300, described resonator is crystal resonator or ceramic resonator.
Wherein, described crystal oscillator driving amplifier circuit is made up of a metal-oxide-semiconductor N0 and a current source I0, also comprises feedback resistance module 100 simultaneously, thereby plays signal feedback effect.The drain electrode of described metal-oxide-semiconductor is connected with the output of described current source, and described power supply is as the active load of MOS; Described metal-oxide-semiconductor is NMOS pipe, described NMOS pipe source electrode and substrate ground connection, and described NMOS tube grid is amplifier in, the drain electrode of described NMOS pipe is amplifier out.
Further embodiment of this invention also relates to the wide pierce circuit of a kind of operating voltage range, comprises amplifying circuit, feedback resistance module and the frequency-selecting resonant circuit of crystal oscillator.Due to the form of the amplifying circuit employing single tube amplification in oscillator in the present invention, the direct current biasing level point of amplifying circuit is reduced to the threshold V T HN that is about a NMOS pipe, the saturation voltage drop of current source only needs 0.2V in theory, the minimum operating voltage of circuit is only VTHN+0.2V, and the minimum operating voltage of the complementary oscillator of existing CMOS is about the threshold voltage sum of NMOS pipe and PMOS pipe, be VTHP+VTHN, typical PMOS pipe threshold voltage is 0.7V～0.9V, the threshold voltage of typical NMOS pipe is 0.6V～0.8V, therefore minimum operating voltage of the present invention is about 0.8V～1.0V, and the minimum operating voltage of the amplifier of existing CMOS structure is about 1.3V～1.7V, visible the present invention has significantly reduced minimum operating voltage.In the time that supply voltage uprises, in the present invention, the load current of single-valve amplification circuit remains unchanged, and DC point does not raise with the rising of supply voltage.
The circuit structure of a kind of concrete enforcement of the present invention refers to shown in Fig. 2 and Fig. 3, and the present invention is made up of metal-oxide-semiconductor 201, feedback resistance module 100 and current source 260.
Wherein the grid of metal-oxide-semiconductor 201 is input OSCI of amplifier, and metal-oxide-semiconductor 201 drain electrodes are output OSCO of amplifier, the source electrode of metal-oxide-semiconductor 201 and substrate ground connection.
Wherein feedback resistance module 100 two ends are connected on respectively grid and the drain electrode of metal-oxide-semiconductor 201, and current source 260 two ends are connected on respectively the drain electrode of power vd D and metal-oxide-semiconductor 201.
Described feedback resistance module 100 is made up of a P channel MOS tube 101 and the first N-channel MOS pipe 102, the grounded-grid of a described P channel MOS tube 101, the source electrode of a described P channel MOS tube 101 and drain electrode meet respectively amplifier in OSCI and amplifier out OSCO, and the substrate of a described P channel MOS tube 101 meets power vd D.Described the first N-channel MOS pipe 102 grids meet power vd D, and described the first N-channel MOS pipe 102 source electrodes and drain electrode meet respectively amplifier in OSCI and amplifier out OSCO, described the first N-channel MOS pipe substrate ground connection.
Described current source 260 is made up of the 2nd P channel MOS tube 261, the 3rd P channel MOS tube 262, the 4th P channel MOS tube 263, the second N-channel MOS pipe 264, the 3rd N-channel MOS pipe 265 and resistance 266.
Described the 2nd P channel MOS tube 261 source electrodes and substrate are connected to power vd D, the 2nd described P channel MOS tube 261 grids are connected with drain electrode, the 2nd described P channel MOS tube 261 grids are connected with the grid of the 3rd described P channel MOS tube 262, the 2nd described P channel MOS tube 261 grids are connected with the grid of the 4th described P channel MOS tube 263, and the 2nd described P channel MOS tube 261 grids are connected with the drain electrode of the second described N-channel MOS pipe 264.
Described the 3rd P channel MOS tube 262 source electrodes and substrate are connected to power vd D, and the 3rd described P channel MOS tube 262 drain electrodes are connected with the 3rd described N-channel MOS pipe 265 drain electrodes; Described the 4th P channel MOS tube 263 source electrodes and substrate are connected to power vd D, and the 4th described P channel MOS tube 263 drain electrodes are connected with described N-channel MOS pipe 201 drain electrodes; The second described N-channel MOS pipe 264 substrates are connected to ground, the second described N-channel MOS pipe 264 source electrode connecting resistances 266, the second described N-channel MOS pipe 264 grids connect the grid of the 3rd described N-channel MOS pipe 265, and the second described N-channel MOS pipe 264 drain electrodes connect the drain electrode of the 2nd described P channel MOS tube 261; The 3rd described N-channel MOS pipe 265 source electrodes and substrate are connected to ground, and the 3rd described N-channel MOS pipe 265 grids are connected with drain electrode, and the 3rd described N-channel MOS pipe 265 drain electrodes are connected with the drain electrode of the 3rd described P channel MOS tube 262.
Therefore, amplifying circuit set forth in the present invention has the wide feature of more existing CMOS structure amplifying circuit operating voltage range, can make to adopt CMOS integrated circuit operating voltage range of the present invention wider, extend the battery of powered battery product, can adopt lower power supply voltage, reduce the power consumption of Circuits System; When supply voltage is high simultaneously, can avoid oscillator resonance in the higher order resonances frequency of the external resonator of circuit, the reliability of intensifier circuit system.
Confirm through test flow checking: on identical technique platform, the minimum operating voltage of oscillator set forth in the present invention is than more than adopting the low 0.7V of oscillator of CMOS structure amplifying circuit, and the minimum operating voltage of oscillator set forth in the present invention significantly reduces.While surveying the external 455kHz resonator of oscillator set forth in the present invention when high-frequency resonant does not occur during up to 4V supply voltage.
| Resonant frequency | Failure of oscillation voltage (V) | Starting of oscillation voltage (V) |
| 4MHz | 1.563 | 1.653 |
| 455KHz | 1.563 | 1.653 |
Table 1 is failure of oscillation and the starting of oscillation voltage that adopts the oscillator of CMOS structure amplifying circuit
Table 2 is failure of oscillation and starting of oscillation voltage and resonance situations of oscillator set forth in the present invention
Can find out that from above table 1 and table 2 the present invention can significantly reduce pierce circuit operating voltage.Simultaneously, due to the active load that adopts current source as amplifier tube, limit the driving intensity of amplifying circuit, quartz-crystal resonator or ceramic resonator generation high-frequency resonant while preventing that supply voltage is higher.
Meanwhile, main thought of the present invention is to adopt single metal-oxide-semiconductor as the signal amplification component in pierce circuit; The load of this metal-oxide-semiconductor is a current source.Because PMOS pipe and NMOS pipe in cmos circuit are the original papers of a specific character complementation; adopt thought of the present invention; substitute NMOS with PMOS and do amplifier tube, can complete equally object of the present invention with NMOS tube current source replacement pmos current source, therefore also belong to protection scope of the present invention.
Above-mentioned crystal oscillator driving amplifier circuit and corresponding crystal oscillator circuit structure are adopted, the form that adopts single tube to amplify due to the amplifying circuit in oscillator wherein, the direct current biasing level point of amplifying circuit is reduced to the threshold V T HN that is about a NMOS pipe, the saturation voltage drop of current source only needs 0.2V in theory, the minimum operating voltage of circuit is only VTHN+0.2V, thereby minimum operating voltage is about 0.8V～1.0V, significantly reduce minimum operating voltage; In the time that supply voltage uprises, wherein the load current of single-valve amplification circuit remains unchanged, DC point does not raise with the rising of supply voltage, therefore there is the wide feature of more existing CMOS structure amplifying circuit operating voltage range, extend the battery of powered battery product, adopt lower power supply voltage, reduced the power consumption of Circuits System; When supply voltage is high, can avoid oscillator resonance in the higher order resonances frequency of the external resonator of circuit, the reliability of intensifier circuit system, simple and practical, the scope of application is comparatively extensive.
In this specification, the present invention is described with reference to its specific embodiment.But, still can make various amendments and conversion obviously and not deviate from the spirit and scope of the present invention.Therefore, specification and accompanying drawing are regarded in an illustrative, rather than a restrictive.
Claims (8)
1. a crystal oscillator driving amplifier circuit, it is characterized in that, described amplifier circuit comprises metal-oxide-semiconductor (201), feedback resistance module (100) and current source (260), the grid of described metal-oxide-semiconductor (201) is connected with the input (OSCI) of this amplifier circuit, the drain electrode of this metal-oxide-semiconductor (201) is connected with the output (OSCO) of this amplifier circuit, the source electrode of this metal-oxide-semiconductor (201) and the equal ground connection of substrate, described feedback resistance module (100) is connected across between the grid and drain electrode of described metal-oxide-semiconductor (201), the drain electrode of described metal-oxide-semiconductor (201) is connected with power supply (VDD) by described current source (260).
2. crystal oscillator driving amplifier circuit according to claim 1, is characterized in that, described feedback resistance module (100) comprises a P channel MOS tube (101) and the first N-channel MOS pipe (102).
3. crystal oscillator driving amplifier circuit according to claim 2, it is characterized in that, the grounded-grid of a described P channel MOS tube (101), the source electrode of the one P channel MOS tube (101) is connected with the input (OSCI) of described amplifier circuit, and the drain electrode of a P channel MOS tube (101) is connected with the output (OSCO) of described amplifier circuit, and the substrate of a described P channel MOS tube (101) is connected with power supply (VDD).
4. crystal oscillator driving amplifier circuit according to claim 2, it is characterized in that, the grid of described the first N-channel MOS pipe (102) is connected with power supply (VDD), the source electrode of this first N-channel MOS pipe (102) is connected with the input (OSCI) of described amplifier circuit, and the drain electrode of this first N-channel MOS pipe (102) is connected with the output (OSCO) of described amplifier circuit, the substrate ground connection of described the first N-channel MOS pipe (102).
5. crystal oscillator driving amplifier circuit according to claim 1, it is characterized in that, described current source (260) comprises the 2nd P channel MOS tube (261), the 3rd P channel MOS tube (262), the 4th P channel MOS tube (263), the second N-channel MOS pipe (264), the 3rd N-channel MOS pipe (265) and resistance (266), the source electrode of described the 2nd P channel MOS tube (261) is all connected with described power supply (VDD) with substrate, the grid of the 2nd P channel MOS tube (261) is all connected with the drain electrode of described the second N-channel MOS pipe (264) with drain electrode, and the grid of the 2nd P channel MOS tube (261) respectively with the grid of described the 3rd P channel MOS tube (262), the grid of the 4th P channel MOS tube (263) is all connected, the source electrode of described the 3rd P channel MOS tube (262) is all connected with described power supply (VDD) with substrate, and the drain electrode of the 3rd P channel MOS tube (262) is all connected with the drain and gate of described the 3rd N-channel MOS pipe (265) respectively, the source electrode of described the 4th P channel MOS tube (263) is all connected with described power supply (VDD) with substrate, and the drain electrode of the 4th P channel MOS tube (263) is connected with the drain electrode of described metal-oxide-semiconductor (201), the substrate ground connection of described the second N-channel MOS pipe (264), the source electrode of this second N-channel MOS pipe (264) is by described resistance (266) ground connection, and the grid of this second N-channel MOS pipe (264) is connected with the grid of described the 3rd N-channel MOS pipe (265), the source electrode of described the 3rd N-channel MOS pipe (265) and the equal ground connection of substrate.
6. one kind has the crystal-oscillator circuit of amplifier circuit described in claim 1, it is characterized in that, in described circuit, also comprise frequency-selecting resonant circuit, described frequency-selecting resonant circuit is connected across between the input (OSCI) and output (OSCO) of described amplifier circuit (200).
7. crystal-oscillator circuit according to claim 6, it is characterized in that, described frequency-selecting resonant circuit comprises resonator (300), the first electric capacity (400) and the second electric capacity (500), described resonator (300) is connected across between the input (OSCI) and output (OSCO) of described amplifier circuit (200), and the input (OSCI) of this amplifier circuit (200) is by described the first electric capacity (400) ground connection, and the output (OSCO) of this amplifier circuit (200) is by described the second electric capacity (500) ground connection.
8. crystal-oscillator circuit according to claim 7, is characterized in that, described resonator (300) is crystal resonator or ceramic resonator.
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| CN201310191321.XA CN104184422A (en) | 2013-05-21 | 2013-05-21 | Driving amplifier circuit of crystal oscillator and corresponding crystal oscillator circuit |
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| CN201310191321.XA CN104184422A (en) | 2013-05-21 | 2013-05-21 | Driving amplifier circuit of crystal oscillator and corresponding crystal oscillator circuit |
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| CN111279570A (en) * | 2017-11-03 | 2020-06-12 | 大陆-特韦斯贸易合伙股份公司及两合公司 | Reverse polarity protection device, method for operating a reverse polarity protection device and corresponding use |
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| CN111279570A (en) * | 2017-11-03 | 2020-06-12 | 大陆-特韦斯贸易合伙股份公司及两合公司 | Reverse polarity protection device, method for operating a reverse polarity protection device and corresponding use |
| CN111279570B (en) * | 2017-11-03 | 2022-11-25 | 大陆-特韦斯贸易合伙股份公司及两合公司 | Reverse polarity protection device, method for operating a reverse polarity protection device and corresponding use |
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Application publication date: 20141203 |