CN104183896B - It is applicable to four port devices test structures of Terahertz frequency range - Google Patents
It is applicable to four port devices test structures of Terahertz frequency range Download PDFInfo
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Abstract
The invention discloses a kind of four port devices test devices being applicable to Terahertz frequency range.It includes Terahertz branch-waveguide power splitter, the waveguide cavity of described Terahertz branch-waveguide power splitter includes main waveguide cavity and complementary wave guide cavity, described main waveguide cavity and complementary wave guide cavity are parallel to each other and all in rectangular structure, also having the N number of branch-waveguide chamber in rectangular structure between described main waveguide cavity and complementary wave guide cavity, described waveguide cavity specifically includes straight coupling measurement structured waveguide chamber, parallel coupling test structured waveguide chamber and test structured waveguide chamber, three kinds of isolation degree test structured waveguide chamber.The invention has the beneficial effects as follows: each test port straight wave guide length of the present invention significantly shortens, device tends to miniaturization, efficiently solves straight wave guide long and bring the problem of huge loss, has filter with low insertion loss, the features such as power capacity is big, what is more important is prone to test device performance.
Description
Technical field
The invention belongs to Terahertz frequency range device detection technical field, particularly relate to a kind of Terahertz frequency range that is applicable to
Four port devices test structures.
Background technology
Within THz wave frequency range is in 300GHz-3000GHz scope, it is positioned at microwave and infrared waves in electromagnetic spectrum
Between Duan.Terahertz science is an interdisciplinary science between electronics and optics, and the research of long wave direction is main
Electronics to be relied on science and technology, shortwave direction research mainly photonic propulsion science and technology.Owing to it is residing special
Position, THz wave can show many and be different from the unique property of other kind electromagnetic radiation, and these characteristics are certainly
Determine THz wave, in a lot of fields, there is the best application prospect.The output of Terahertz system is directly determined
The operating radius of system, capacity of resisting disturbance and communication quality are determined.In order to improve the output of Terahertz system,
The method generally used is power synthetic technique.This technology be by individual devices export power by power distribute/
Synthesis network concentrates output, thus increases the output of system, and power synthetic technique is to improve Terahertz at present
Commonly using and effective method of system output power.Meanwhile, power divider can be that system provides same signal
The multiple-channel output in source, meets the use demand of system.Up to the present, merit divides/and synthesizer structure type is numerous,
Wherein the multiple-limb rectangular waveguide bridge structure of four ports because having each port match, isolation is high, insertion loss is little
Power capacity advantages of higher and be widely used.In microwave and millimeter wave frequency range, the vector network frequently with dual-port divides
Four port power divider are tested by analyzer, need to use the matched load with standard flange with non-during test
Test port is connected to ensure being normally carried out of test, it means that device each port straight waveguide sections needs suitably to prolong
Long to ensure that device has sufficiently large size to make a kind of power divider test structure can carry out all properties
Test.At terahertz wave band, owing to the size of device constantly reduces along with the rising of frequency, and Kelvin effect
And relevant loss causes device that internal roughness is had the harshest requirement, apply traditional machining skill
Art makes, and is extremely difficult to requirement on machining accuracy, even cannot process.And deep anti-in existing Micrometer-Nanometer Processing Technology
Answering ion etching (DRIE) technology can be competent at for the processing of terahertz waveguide transmission apparatus, machining accuracy exists
Micron dimension.DRIE technology is a kind of each diversity high aspect ratio technology, belongs to dry etching, is also advanced person
Etch techniques, is typically based on inductively coupled plasma and silicon is carried out Deep processing pedagogy.Micro-with the body of other silicon add
Work is compared, and DRIE technology does not relies on Substrate orientation, has bigger processing free space.Typical etch mask
For silicon dioxide or photoresist, etching selection ratio is relevant with specific technological parameter.DRIE technology is used to process
The silicon structure of high-aspect-ratio, these silicon structures are as the mould of generation metal structure, or deposit metal on silicon structure
Thin film is directly used as device.The straight of DRIE technology processing and manufacturing is used within 325GHz-500GHz band limits
The loss of waveguide is about 0.4dB/mm, it means that waveguide loss be can not ignore, and tests the straight ripple of device interface extension
Lead length the shortest more good.In Terahertz frequency range, owing to measured device size is far smaller than test system standard flange
Size, causes the method for testing of four port devices that microwave and millimeter wave frequency range can not be used conventional to be tested, the most non-
The all properties of measured device is tested by the mode that test port cannot use termination matching to load.Except this it
Outward, screw and the length of pin of interconnection function is played relative to test system due to the distance between the tested port of device
Spend shorter, cause connecting normally during test there will be the phenomenon contradicted each other.Test for us is brought by these
Difficulty, even cannot test device.
Summary of the invention
In order to solve the problems referred to above, the present invention proposes a set of four port devices test structures being applicable to Terahertz frequency range.
The technical scheme is that the four port devices test structures being applicable to Terahertz frequency range, including Terahertz branch ripple
Leading power splitter, the waveguide cavity of described Terahertz branch-waveguide power splitter includes main waveguide cavity and complementary wave guide cavity, described main waveguide
Chamber and complementary wave guide cavity are parallel to each other and all in rectangular structure, also have between described main waveguide cavity and complementary wave guide cavity in
N number of branch-waveguide chamber of rectangular structure;Described main waveguide cavity one end is that waveguide inputs section, and the other end is that waveguide is straight
Logical deferent segment, described complementary wave guide cavity one end is waveguide distance piece, and the other end is that waveguide couples deferent segment, described main ripple
The waveguide input section of guide cavity is positioned at the same side in N number of branch-waveguide chamber, main waveguide with the waveguide distance piece of complementary wave guide cavity
The waveguide in chamber is led directly to deferent segment and is coupled deferent segment with the waveguide of complementary wave guide cavity and be positioned at the opposite side in N number of branch-waveguide chamber;
Described waveguide cavity specifically includes straight coupling measurement structured waveguide chamber, parallel coupling test structured waveguide chamber and isolation degree test
Test structured waveguide chamber, three kinds of structured waveguide chamber;Described waveguide cavity uses the structure arranging perpendicular corners at particular port, surveys
Examination port is positioned at same level alignment line, and non-test port turns fills in absorbing material to side, and described absorbing material uses point
Splitting structure, tip inserts in non-test end waveguide mouth.
Further, the complementary wave guide cavity two ends in above-mentioned straight coupling measurement structured waveguide chamber are respectively provided with perpendicular corners and edge
The most main waveguide cavity side extends;First one end, branch-waveguide chamber inputs section with the waveguide of main waveguide cavity and is connected, separately
One end is connected with the waveguide distance piece of complementary wave guide cavity perpendicular corners, one end, N branch-waveguide chamber and main waveguide cavity
Waveguide is led directly to deferent segment and is connected, and the other end couples deferent segment with the waveguide of complementary wave guide cavity perpendicular corners and is connected.
Further, the waveguide of main waveguide cavity in above-mentioned parallel coupling test structured waveguide chamber is led directly to deferent segment and is had vertical
Straight turning and complementary wave guide cavity side dorsad, edge extend;The waveguide distance piece of described complementary wave guide cavity has perpendicular corners and the back of the body
Extending to main waveguide cavity side, described waveguide coupling deferent segment is through twice perpendicular corners and along same with waveguide input section
Horizontal alignment line direction extends;First one end, branch-waveguide chamber inputs section with the waveguide of main waveguide cavity and is connected, another
End is connected with the waveguide distance piece of complementary wave guide cavity perpendicular corners, and one end, N branch-waveguide chamber is vertical with main waveguide cavity
The waveguide at turning is led directly to deferent segment and is connected, and the other end couples deferent segment with the waveguide of complementary wave guide cavity perpendicular corners and is connected
Connect.
Further, the main waveguide cavity two ends in above-mentioned isolation degree test structured waveguide chamber are respectively provided with perpendicular corners and edge
Complementary wave guide cavity side extends dorsad;Described complementary wave guide cavity two ends are respectively provided with perpendicular corners and along the most main waveguide cavity one
Side extends;Described waveguide is led directly to deferent segment and is coupled deferent segment with waveguide and be positioned at same level alignment line, and described waveguide is defeated
The section of entering and waveguide distance piece are positioned at same level alignment line;First one end, branch-waveguide chamber and main waveguide cavity perpendicular corners
Waveguide input section be connected, the other end is connected with the waveguide distance piece of complementary wave guide cavity perpendicular corners, N branch
Waveguide cavity one end leads directly to deferent segment with the waveguide of main waveguide cavity perpendicular corners and is connected, and the other end is vertical with complementary wave guide cavity
The waveguide coupling deferent segment at turning is connected.
The invention has the beneficial effects as follows: existing power splitter branch bridge structure is used multi-form vertical by the present invention
The mode process at turning forms three kinds of test structures, jointly completes the performance test to power divider, tests structure
Middle two ports by test are placed on a horizontal alignment line, and it is right to reduce that non-test port fills in absorbing material
The impact of two test port performances.A set of test structure of this conceptual design can make each test compared to existing structure
Port straight wave guide length significantly shortens, and device tends to miniaturization, efficiently solves straight wave guide long and bring huge damage
The problem of consumption, has filter with low insertion loss, and the features such as power capacity is big, what is more important is prone to survey device performance
Examination.
Accompanying drawing explanation
Fig. 1 is the terahertz waveguide power splitter internal structure top view of the present invention.
Fig. 2 is the terahertz waveguide power splitter straight coupling measurement structural upright structural representation of the present invention.
Fig. 3 is the terahertz waveguide power splitter straight coupling measurement structure upper cavity structure top view of the present invention.
Fig. 4 is the terahertz waveguide power splitter straight coupling measurement structure lower chamber structure top view of the present invention.
Fig. 5 is the survey under 325~440GHz frequency ranges of the terahertz waveguide power splitter straight coupling measurement structure of the present invention
Examination curve.
Fig. 6 is the terahertz waveguide power splitter parallel coupling test structural upright structural representation of the present invention.
Fig. 7 is the terahertz waveguide power splitter parallel coupling test structure upper cavity structure top view of the present invention.
Fig. 8 is the terahertz waveguide power splitter parallel coupling test structure lower chamber structure top view of the present invention.
Fig. 9 is that the terahertz waveguide power splitter parallel coupling test structure of the present invention is under 325~440GHz frequency ranges
Test curve.
Figure 10 is the terahertz waveguide power splitter isolation degree test structural upright structural representation of the present invention.
Figure 11 is the terahertz waveguide power splitter isolation degree test structure upper cavity structure top view of the present invention.
Figure 12 is the terahertz waveguide power splitter isolation degree test structure lower chamber structure top view of the present invention.
Figure 13 is that the terahertz waveguide power splitter isolation degree test structure of the present invention is under 325~440GHz frequency ranges
Test curve.
Wherein, 1, upper cavity;2, lower chamber;3, waveguide cavity;3.1, straight coupling measurement structured waveguide chamber;3.2、
Parallel coupling test structured waveguide chamber;3.3, isolation degree test structured waveguide chamber;4, main waveguide cavity;5, complementary wave
Guide cavity;6, waveguide input section;7, deferent segment is led directly in waveguide;8, waveguide coupling deferent segment;9, waveguide distance piece;
10, the first branch-waveguide chamber;11, the second branch-waveguide chamber;12, the 3rd branch-waveguide chamber;13, the 4th branch
Waveguide cavity;14, quintafurcation waveguide cavity;15, perpendicular corners;16, boss.
Detailed description of the invention
In 325~500GHz frequency ranges, the loss of the straight wave guide of DRIE technology processing and manufacturing is used to be about
0.4dB/mm.For reducing loss, straight wave guide length need to shorten to suitable length, but this adds difficulty for test.
Between this, inventor has invented three kinds of test structures and has jointly completed the performance test to power splitter, and this invention is too
It is applicable to the performance test of other Terahertz four port devices.
It is illustrated in figure 1 the core inner structure top view of terahertz waveguide power splitter.Expand on this basis as this
Three kinds of test structures of the terahertz waveguide power splitter that patent application provides, as shown in Fig. 2, Fig. 6, Figure 10, by
Superposed upper cavity 1 (as shown in Fig. 3, Fig. 7, Figure 11) and be positioned at bottom lower chamber 2 (as Fig. 4,
Shown in Fig. 8, Figure 12) stacking composition.Upper cavity 1 is sealed on lower chamber 2, by DRIE technology to upper cavity
The lower surface of 1 and the upper surface of lower chamber 2 close the engraved structure waveguide cavity 3 required for being formed after performing etching.
Waveguide cavity 3 is divided into three kinds of different structures, the most straight coupling measurement structured waveguide chamber 3.1, parallel coupling test knot
Structure waveguide cavity 3.2 and isolation degree test structured waveguide chamber 3.3, three kinds of structures are respectively in order to test the insertion of straight coupled end
Loss, parallel coupling end insertion loss and isolation.Waveguide cavity 3 with air as filled media, upper cavity 1 He
Lower chamber 2 is silica-based gold-plated material, is i.e. processed respectively by etching on the silicon substrate that two panels thickness is 0.5mm
Go out the part-structure of waveguide cavity, then by sputtering craft of gilding plating Gold plated Layer in waveguide cavity structure, Gold plated Layer
Thickness is preferably 2.5~3.5 μm, and metallized for two panels wafer bonding is finally formed the entirety of waveguide cavity together
Structure.
Above-mentioned straight coupling measurement structured waveguide chamber 3.1 includes main waveguide cavity 4 and complementary wave guide cavity 5, main waveguide cavity 4 He
The 10, the second branch-waveguide chamber, the first branch-waveguide chamber in cuboid from left to right it is followed successively by between complementary wave guide cavity 5
11, the 3rd branch-waveguide chamber 13, branch-waveguide chamber the 12, the 4th and quintafurcation waveguide cavity 14 are (such as Fig. 3, Fig. 4
Shown in), signal can be coupled to complementary wave guide cavity 5 from main waveguide cavity 4 by five branch-waveguide chambeies.First branch-waveguide chamber
10, the second branch-waveguide chamber the 11, the 3rd branch-waveguide chamber the 12, the 4th branch-waveguide chamber 13 and quintafurcation waveguide
Boss 16 it is respectively provided with between chamber 14.Main waveguide cavity 4 one end is that waveguide inputs section 6, and the other end is that waveguide is led directly to
Deferent segment 7;Complementary wave guide cavity 5 one end is waveguide distance piece 9, and the other end is that waveguide couples deferent segment 8, complementary wave guide cavity
5 two ends are respectively provided with perpendicular corners 15 and extend along the most main waveguide cavity 4 side.Two port waveguides of test are defeated
The section of entering 6 and waveguide are led directly to deferent segment 7 and are positioned on same level alignment line, non-test port waveguide coupling deferent segment 8
With waveguide distance piece 9, there is perpendicular corners 15 and extend to side and fill in the volume of absorbing material replacement termination relatively
Big matched load.First one end, branch-waveguide chamber 10 inputs section 6 with the waveguide of main waveguide cavity 4 and is connected, separately
One end is connected with the waveguide distance piece 9 of complementary wave guide cavity;Quintafurcation waveguide cavity 14 one end and the ripple of main waveguide cavity
Leading straight-through deferent segment 7 to be connected, the other end couples deferent segment 8 with the waveguide of complementary wave guide cavity and is connected.Waveguide inputs
Section 6, waveguide lead directly to deferent segment 7, waveguide couples deferent segment 8, waveguide distance piece 9 is standard WR2.2 rectangular waveguide,
The size wide, high of cross section is respectively 560 μm ± 5 μm, 280 μm ± 5 μm.On a horizontal alignment line
Distance between two test ports is 6mm, it is seen that straight wave guide length significantly shortens, and it is unnecessary to effectively reduce
Loss.The centrage that the planar structure of waveguide cavity may be designed as being relatively orthogonal to signal transmission direction is symmetrical, as relatively
Centrage A-A ' in Fig. 3, Fig. 4 is symmetrical, and test result is as shown in Figure 5.
Above-mentioned parallel coupling test structured waveguide chamber 3.2 includes main waveguide cavity 4 and complementary wave guide cavity 5, main waveguide cavity 4
And between complementary wave guide cavity 5, from left to right it is followed successively by the 10, the second branch-waveguide chamber, the first branch-waveguide chamber in cuboid
11, the 3rd branch-waveguide chamber 13, branch-waveguide chamber the 12, the 4th and quintafurcation waveguide cavity 14 are (such as Fig. 7, Fig. 8
Shown in), signal can be coupled to complementary wave guide cavity 5 from main waveguide cavity 4 by five branch-waveguide chambeies.First branch-waveguide chamber
10, the second branch-waveguide chamber the 11, the 3rd branch-waveguide chamber the 12, the 4th branch-waveguide chamber 13 and quintafurcation waveguide
Boss 16 it is respectively provided with between chamber 14.Main waveguide cavity 4 one end is that waveguide inputs section 6, and the other end is that waveguide is led directly to
Deferent segment 7.Waveguide is led directly to deferent segment 7 and is had perpendicular corners 15 and lead 5 sides extensions along complementary wave dorsad;Complementary wave is led
One end, chamber 5 is waveguide distance piece 9, and the other end is that waveguide couples deferent segment 8;Waveguide distance piece 9 has and vertically turns
The most main waveguide cavity 4 side in angle 15 and edge extends;Waveguide coupling deferent segment 8 through twice perpendicular corners 15 and along with
Waveguide input section 6 same level alignment line direction extends.Two port waveguide input sections 6 of test and waveguide coupling
Deferent segment 8 is positioned on same level alignment line;Deferent segment 7 is led directly in non-test port waveguide and waveguide distance piece 9 has
There is perpendicular corners 15 and extend to side and fill in the matched load that absorbing material replacement volume is bigger.First branch
The waveguide of waveguide cavity 10 one end and main waveguide cavity 4 inputs section 6 and is connected, the waveguide of the other end and complementary wave guide cavity every
It is connected from section 9;Quintafurcation waveguide cavity 14 one end leads directly to deferent segment 7 with the waveguide of main waveguide cavity and is connected,
The other end couples deferent segment 8 with the waveguide of complementary wave guide cavity and is connected.Waveguide inputs section 6, deferent segment 7 is led directly in waveguide,
Waveguide coupling deferent segment 8, waveguide distance piece 9 are standard WR2.2 rectangular waveguide, and the size wide, high of cross section is divided
It is not 560 μm ± 5 μm, 280 μm ± 5 μm.Between on a horizontal alignment line two test ports away from
From for 7mm, it is seen that straight wave guide significantly shortens, and effectively reduces unnecessary loss, and test result is as shown in Figure 9.
Above-mentioned isolation degree test structured waveguide chamber 3.3 includes main waveguide cavity 4 and complementary wave guide cavity 5, main waveguide cavity 4 He
The 10, the second branch-waveguide chamber, the first branch-waveguide chamber in cuboid from left to right it is followed successively by between complementary wave guide cavity 5
11, the 3rd branch-waveguide chamber 13, branch-waveguide chamber the 12, the 4th and quintafurcation waveguide cavity 14 are (such as Figure 11, figure
12), signal can be coupled to complementary wave guide cavity 5 from main waveguide cavity 4 by five branch-waveguide chambeies.First branch-waveguide chamber
10, the second branch-waveguide chamber the 11, the 3rd branch-waveguide chamber the 12, the 4th branch-waveguide chamber 13 and quintafurcation waveguide
Boss 16 it is respectively provided with between chamber 14.Main waveguide cavity 4 one end is that waveguide inputs section 6, and the other end is that waveguide is led directly to
Deferent segment 7, main waveguide cavity 4 two ends are respectively provided with perpendicular corners 15 and lead 5 sides extensions along complementary wave dorsad;Complementary wave
Guide cavity 5 one end is waveguide distance piece 9, and the other end is that waveguide couples deferent segment 8, and complementary wave guide cavity 5 two ends have respectively
There is perpendicular corners 15 and extend along the most main waveguide cavity 4 side.Deferent segment 7 and waveguide are led directly in test port waveguide
Coupling deferent segment 8 is on same level alignment line, and non-test port waveguide input section 6 and waveguide distance piece 9 are same
On one horizontal alignment line and fill in absorbing material and replace the bigger matched load of volume.First branch-waveguide chamber 10 1
Holding the waveguide with main waveguide cavity 4 to input section 6 to be connected, the other end is connected with the waveguide distance piece 9 of complementary wave guide cavity 5
Connect;Quintafurcation waveguide cavity 14 one end leads directly to deferent segment 7 with the waveguide of main waveguide cavity 4 and is connected, the other end with
The waveguide coupling deferent segment 8 of complementary wave guide cavity 5 is connected. and deferent segment 7, waveguide coupling are led directly in waveguide input section 6, waveguide
Close deferent segment 8, waveguide distance piece 9 is standard WR2.2 rectangular waveguide, and the size wide, high of cross section is respectively 560
μm±5μm、280μm±5μm.The distance between two test ports on a horizontal alignment line is 7mm,
Visible straight wave guide significantly shortens, and effectively reduces unnecessary loss.The planar structure of waveguide cavity may be designed as relatively
The centrage being parallel to signal transmission direction is symmetrical, as the centrage B-B ' in relative Figure 11, Figure 12 is symmetrical,
Test result is as shown in figure 13.
In order to the purpose of the present invention is better achieved, the present invention takes non-test port to fill in the method generation of absorbing material
For the matched load that volume is bigger, absorbing material uses wedge shape structure, tip need to insert power splitter non-test end to be measured
In waveguide mouth.Understood absorbing material absorbing property by Fig. 5, Fig. 9, Figure 13 good, reach the desired effect of expection
Really.
DRIE processing technique in above-mentioned Micrometer-Nanometer Processing Technology, its technological process approximately as: (a) prepares etching and covers
Film: silicon wafer thickness is 500um, forms oxide layer on silicon substrate surface;(b) photoetching: by the way of photoetching
Generating figure on mask layer, figure is positioned at the correspondence position on the silicon substrate component masking layer needing corrosion, and
The mask layer of this part is removed, expose under silicon substrate;C () ICP etches silicon: etch prescribed depth
With the rectangular channel of shape, etching depth is 280um;D () removes mask: removed by the mask of residual after etching;(e)
Gold-plated: by sputtering Au, to make the surface metalation of silicon structure;F () is bonded: use Au-Au bonding techniques by two
The most enantiomorphous wafer bonding of block, completes flow processing, obtains designed Terahertz finally by scribing
Device example.
Using vector network analyzer system to combine frequency expansion module to test, test result shows, center frequency
Point the insertion loss of the E face rectangular waveguide straight coupled end of branch line electric bridge power splitter of 380GHz at 350GHz~
Being about about 2dB (deduction 3dB inherent loss) in 410GHz broadband, in band, amplitude fluctuation is little, reflection coefficient of port
Loss is superior to 15dB.The insertion loss of parallel coupling end is about 1.5dB in 350GHz~410GHz broadband
Left and right (deduction 3dB inherent loss), in band, amplitude fluctuation is little, and reflection coefficient of port loss is superior to 20dB.Isolation
It is superior to 30dB in 350GHz~410GHz broadband, the most excellent in 375GHz~385GHz, 10GHz bandwidth
In 40dB.This means that the four port devices test devices of the present invention are at Terahertz low side (325GHz~500GHz)
Can realize relatively low insertion loss, solve the loss of Terahertz frequency range four port power divider excessive, inconvenience is surveyed
A difficult problem for examination.
What the present invention provided is applicable to four port devices test devices of Terahertz frequency range, uses WR2.2 standard rectangular ripple
The advantages such as waveguide interface, has operating frequency high, be lost little, it is easy to manufacture, highly versatile, in Terahertz system
Have a good application prospect.
Those of ordinary skill in the art is it will be appreciated that embodiment described here is to aid in the reader understanding present invention's
Principle, it should be understood that protection scope of the present invention is not limited to such special statement and embodiment.This area common
It is various specifically that technical staff can make various other without departing from essence of the present invention according to these technology disclosed by the invention enlightenment
Deformation and combination, these deformation and combination are the most within the scope of the present invention.
Claims (4)
1. the four port devices test devices being applicable to Terahertz frequency range, it is characterised in that: include Terahertz branch-waveguide
Power splitter, the waveguide cavity (3) of described Terahertz branch-waveguide power splitter includes main waveguide cavity (4) and complementary wave guide cavity (5),
Described main waveguide cavity (4) and complementary wave guide cavity (5) are parallel to each other and all in rectangular structure, described main waveguide cavity (4)
And also there is between complementary wave guide cavity (5) the N number of branch-waveguide chamber in rectangular structure;Described main waveguide cavity (4)
One end is waveguide input section (6), and the other end is that deferent segment (7), described complementary wave guide cavity (5) one end are led directly in waveguide
For waveguide distance piece (9), the other end is waveguide coupling deferent segment (8), and the waveguide of described main waveguide cavity (4) is defeated
The waveguide distance piece (9) of the section of entering (6) and complementary wave guide cavity (5) is positioned at the same side in N number of branch-waveguide chamber, main
The waveguide of waveguide cavity (4) is led directly to deferent segment (7) and is coupled deferent segment (8) with the waveguide of complementary wave guide cavity (5) and be positioned at
The opposite side in N number of branch-waveguide chamber;Described waveguide cavity (3) specifically include straight coupling measurement structured waveguide chamber (3.1),
Parallel coupling test structured waveguide chamber (3.2) and (3.3) three kinds of isolation degree test structured waveguide chamber test structure ripple
Guide cavity;Described three kinds of test structured waveguide chambeies all ends to the waveguide input section of the waveguide cavity of Terahertz branch-waveguide power splitter
Mouthful, waveguide lead directly to the port of deferent segment, the port of waveguide distance piece, waveguide coupling deferent segment port carry out turning round of waveguide
With prolongation so that the test port in three kinds of test structures is positioned at same level alignment line, non-test port turns to be filled in side
Entering absorbing material, described absorbing material uses Wedge structure, and tip inserts in non-test end waveguide mouth.
It is applicable to four port devices test devices of Terahertz frequency range the most as claimed in claim 1, it is characterised in that: institute
Complementary wave guide cavity (5) two ends stating straight coupling measurement structured waveguide chamber (3.1) are respectively provided with perpendicular corners and along dorsad
Main waveguide cavity (4) side extends;First branch-waveguide chamber (10) one end inputs with the waveguide of main waveguide cavity (4)
Section (6) is connected, and the other end is connected with the waveguide distance piece (9) of complementary wave guide cavity (5) perpendicular corners, N
One end, branch-waveguide chamber leads directly to deferent segment (7) with the waveguide of main waveguide cavity (4) and is connected, and the other end is led with complementary wave
Waveguide coupling deferent segment (8) of chamber (5) perpendicular corners is connected.
It is applicable to four port devices test devices of Terahertz frequency range the most as claimed in claim 1, it is characterised in that: institute
The waveguide of the main waveguide cavity (4) stating parallel coupling test structured waveguide chamber (3.2) is led directly to deferent segment (7) and is had
Perpendicular corners and complementary wave guide cavity (5) side dorsad, edge extend;The waveguide distance piece (9) of described complementary wave guide cavity (5)
Having perpendicular corners and the most main waveguide cavity (4) side extends, described waveguide coupling deferent segment (8) is hung down through twice
Straight turning and edge extend with waveguide input section (6) same level alignment line direction;First branch-waveguide chamber (10)
One end inputs section (6) with the waveguide of main waveguide cavity (4) and is connected, and the other end is vertical with complementary wave guide cavity (5) to turn
The waveguide distance piece (9) at angle is connected, one end, N branch-waveguide chamber and the ripple of main waveguide cavity (4) perpendicular corners
Leading straight-through deferent segment (7) to be connected, the other end couples deferent segment (8) with the waveguide of complementary wave guide cavity (5) perpendicular corners
It is connected.
It is applicable to four port devices test devices of Terahertz frequency range the most as claimed in claim 1, it is characterised in that: institute
Main waveguide cavity (4) two ends stating isolation degree test structured waveguide chamber (3.3) are respectively provided with perpendicular corners and along dorsad
Complementary wave guide cavity (5) side extends;Described complementary wave guide cavity (5) two ends are respectively provided with perpendicular corners and along the most main ripple
Guide cavity (4) side extends;Described waveguide is led directly to deferent segment (7) and is coupled deferent segment (8) with waveguide and be positioned at same
Horizontal alignment line, described waveguide input section (6) and waveguide distance piece (9) are positioned at same level alignment line;First
Branch-waveguide chamber (10) one end inputs section (6) with the waveguide of main waveguide cavity (4) perpendicular corners and is connected, another
End is connected with the waveguide distance piece (9) of complementary wave guide cavity (5) perpendicular corners, one end, N branch-waveguide chamber and master
The waveguide of waveguide cavity (4) perpendicular corners is led directly to deferent segment (7) and is connected, and the other end hangs down with complementary wave guide cavity (5)
Waveguide coupling deferent segment (8) at straight turning is connected.
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CN114725644B (en) * | 2022-05-09 | 2023-01-31 | 电子科技大学 | E-surface branch waveguide directional coupler with ultralow amplitude unevenness |
CN115173015B (en) * | 2022-06-15 | 2023-11-07 | 电子科技大学长三角研究院(湖州) | Novel full-band high-isolation waveguide two-path power divider |
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CN103117438A (en) * | 2013-03-04 | 2013-05-22 | 电子科技大学 | Terahertz waveguide cavity filter |
CN103457009A (en) * | 2013-08-16 | 2013-12-18 | 上海理工大学 | Terahertz low-loss bent waveguide |
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