CN104183657A - Crystalline silicon solar cell alternate metal front electrode and preparation method thereof - Google Patents
Crystalline silicon solar cell alternate metal front electrode and preparation method thereof Download PDFInfo
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- CN104183657A CN104183657A CN201410447527.9A CN201410447527A CN104183657A CN 104183657 A CN104183657 A CN 104183657A CN 201410447527 A CN201410447527 A CN 201410447527A CN 104183657 A CN104183657 A CN 104183657A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 127
- 239000004332 silver Substances 0.000 claims abstract description 127
- 229910052709 silver Inorganic materials 0.000 claims abstract description 127
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 239000002002 slurry Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a crystalline silicon solar cell alternate metal front electrode and a preparation method of the crystalline silicon solar cell alternate metal front electrode. The crystalline silicon solar cell alternate metal front electrode comprises multiple columns of main grids and multiple rows of fine grids, the fine grids are connected with the main grids, and each row of fine grids comprise multiple connecting non-silver electrodes and multiple local area silver electrodes, wherein the connecting non-silver electrodes and the local area silver electrodes are distributed alternately. The local area silver electrodes penetrate through an anti-reflection passivation film and then make ohmic contact with p-n junctions, the connecting non-silver electrodes are arranged on the upper surface of the anti-reflection passivation film, the two ends of each connecting non-silver electrode in each row of fine grids make ohmic contact with the local area silver electrodes adjacent to the connecting non-silver electrode. The crystalline silicon solar cell alternate metal front electrode has the advantages that contact recombination loss caused by damage to the anti-reflection passivation film can be reduced, and consumption of silver paste in the production process can be reduced as well.
Description
Technical field
The present invention relates to front electrode of a kind of crystal silicon solar energy battery alternative expression metal and preparation method thereof, belong to technical field of solar batteries.
Background technology
At present, commercialization crystal-silicon solar cell generally adopts the front electrode of silk screen printing silver slurry preparation, and in high-temperature sintering process, metal oxide and silicon nitride generation chemical reaction in silver slurry, by silicon nitride etch, make silver and silicon formation ohmic contact.The technology of preparing of this front electrode is stable ripe, is widely used by industry.But, in solar cell front electrode, for charge carrier is derived by electrode, silver must be carved and wear reduced passivation resisting film, has introduced defect level at silicon face, and a large amount of charge carriers is undertaken compound by defect level, form contact compound, affected open circuit voltage and the conversion efficiency of solar cell.
Meanwhile, along with the production-scale rapid expansion of crystal silicon cell, photovoltaic industry use silver accounted for the more than 0.5% of global silver-colored annual production, according to the photovoltaic industry speed of development estimate, at the year two thousand twenty photovoltaic industry by the industry that is silver consuming amount maximum.Under the basicly stable condition of the silver-colored exploitation rate in the whole world, will make silver-colored valency rise violently with silver on a large scale, cause solar cell manufacturing cost to rise.
Summary of the invention
Technical problem to be solved by this invention is the defect that overcomes prior art, provide a kind of crystal silicon solar energy battery alternative expression metal front electrode, it not only can reduce the contact recombination losses causing because reduced passivation resisting film is destroyed, and can reduce the consumption of the silver paste in production process.
In order to solve the problems of the technologies described above, technical scheme of the present invention is: electrode before a kind of crystal silicon solar energy battery alternative expression metal, comprise the thin grid of multiple row main grid and multirow, thin grid are connected with main grid, and multiple row main grid is parallel longitudinal setting, the thin grid of multirow are perpendicular to laterally the be arrangeding in parallel of main grid, and the thin grid of every row comprise and are the distributed non-silver electrode of multiple connections being arranged alternately and multiple local silver electrode; Wherein, local silver electrode forms ohmic contact with p-n junction after running through reduced passivation resisting film, connect on the upper surface that non-silver electrode is arranged on reduced passivation resisting film, and in the thin grid of every row, connect the two ends of non-silver electrode and adjacent local silver electrode and form ohmic contact, connect non-silver electrode and not exclusively cover local silver electrode, in every thin grid, connect non-silver electrode and the local silver electrode mode that is distributed in distance.
Further, the width of described main grid in the direction that is parallel to thin grid is 0.1～10mm.
Further, the composition of described main grid can be silver, and in order to reduce better the consumption of silver slurry, the composition of main grid can also be at least one material in copper, aluminium, tin, nickel certainly.
Further, described local silver electrode is short-term distributed arrangement, and in the direction of the thin grid perpendicular to described, the spacing of adjacent local silver electrode is 0.1～10mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of adjacent local silver electrode is 0.01～10mm, and the length of local silver electrode is 0.1～50mm.
Further, the non-silver electrode of described connection is short-term distributed arrangement, and in the direction of the thin grid perpendicular to described, the spacing of the adjacent non-silver electrode of connection is 0.1～10mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of the adjacent non-silver electrode of connection is 0.1～10mm, and the length that connects non-silver electrode is 0.01～50mm.
Further, described local silver electrode is made up of silver-colored material.
Further, in order significantly to reduce the consumption of production a slice battery silver paste, can significantly save the metallized production cost of front surface, the non-silver electrode of described connection can adopt at least one material in copper, aluminium, tin, nickel simultaneously.
The present invention also provides the preparation method of the front electrode of a kind of crystal silicon solar energy battery alternative expression metal, and the step of the method is as follows:
(a) provide a first finished product at least with silicon base, n type diffused layer and reduced passivation resisting film, and reduced passivation resisting film, n type diffused layer and silicon base arrange from top to bottom, n type diffused layer and silicon base form p-n junction;
(b) silver paste that is distributed setting is set on the upper surface of reduced passivation resisting film;
(c) carry out after sintering processes makes silver paste run through reduced passivation resisting film forming ohmic contact with p-n junction, thereby form local silver electrode;
(d) on reduced passivation resisting film, preparation connects non-silver electrode and main grid again, guarantees that the two ends that connect non-silver electrode connect corresponding adjacent local silver electrode, form thin grid;
(e) annealing in process makes to connect non-silver electrode and forms ohmic contact with corresponding local silver electrode, thereby completes the preparation of the front electrode of crystal silicon solar energy battery alternative expression metal.
Further, in described step (b), the formation method that forms the silver paste of local silver electrode is silk screen printing or the printing of steel version or composite halftone printing or ink jet printing or shower nozzle extruding.
Further, in described step (d), the formation method that connects non-silver electrode is silk screen printing or the printing of steel version or composite halftone printing.
Adopt after technique scheme, compared with the thin grid of long line continuous with conventional batteries, thin grid of the present invention are mainly made up of the local silver electrode that connects non-silver electrode and be isolated distribution, reduce like this area of silver-colored covering, adopt other metal pastes as the connecting electrode connecting between local silver electrode, significantly reduce the consumption of every production a slice battery silver paste, simultaneously, due to other metal pastes, as copper slurry or nickel slurry, because the price of copper or nickel is far below silver-colored price, therefore can significantly save the metallized production cost of front surface, this local silver electrode plays the effect that charge carrier is derived from silicon base, simultaneously, it is the non-silver electrode of connection of distributed arrangement equally that the present invention adopts, the non-silver electrode of this connection does not contact with silicon, therefore do not destroy reduced passivation resisting film, its effect is to connect isolated local silver electrode, the conduct current main grid that isolated local silver electrode is collected, compare with conventional batteries, the destroyed area that has reduced reduced passivation resisting film, effectively reduces contact recombination losses, has significantly reduced the consumption of the silver paste of every battery simultaneously.
Brief description of the drawings
Fig. 1 is the flowage structure schematic diagram one of the preparation method of electrode before crystal silicon solar energy battery alternative expression metal of the present invention;
Fig. 2 is the flowage structure schematic diagram two of the preparation method of electrode before crystal silicon solar energy battery alternative expression metal of the present invention;
Fig. 3 is the flowage structure schematic diagram three of the preparation method of electrode before crystal silicon solar energy battery alternative expression metal of the present invention;
Fig. 4 is the vertical view of Fig. 3.
Embodiment
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation below.
Embodiment mono-
The present embodiment provides a kind of crystal silicon solar energy battery alternative expression metal front electrode, as shown in Figure 1, adopt the p-type silicon chip of 156mm × 156mm to prepare solar cell as silicon base 1, wherein, the n type diffused layer 2 that is provided with phosphorus diffusion at the front surface of silicon base 1, sheet resistance is 90 Ω/.Above n type diffused layer 2, adopt SiNx:H that the about 70nm of PECVD deposition one deck is thick as surperficial reduced passivation resisting film 3, this reduced passivation resisting film 3 passivation n type diffused layer 2 effectively, before not depositing reduced passivation resisting film 3, recombination-rate surface is 1 × 10
6cm/s magnitude, after transpassivation, recombination-rate surface reduces to 1 × 10
4cm/s magnitude adopts silk screen printing silver slurry on reduced passivation resisting film 3, is with the difference of conventional batteries, silver slurry is distributed short-term, and in high-temperature sintering process, silver slurry burns reduced passivation resisting film 3, form good ohmic contact with n type diffused layer 2, form local silver electrode 4, as shown in Figure 2.In the present embodiment, in the direction of the thin grid perpendicular to described, the spacing of adjacent local silver electrode 4 is 0.15mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of adjacent local silver electrode 4 is 0.1mm, the length of local silver electrode 4 is 1mm, but at interface, contact zone, owing to having destroyed reduced passivation resisting film 3, local silver electrode 4 exists serious interface compound with n type diffused layer 2, and recombination-rate surface can reach 1 × 10
7cm/s magnitude.But with respect to conventional batteries, local silver electrode 4 has reduced shared area, only accounts for 3.6% of the gross area, silver slurry consumption is only 80mg, has reduced by 46.7% than conventional batteries, and recombination current density is 36fA/cm
2, reduced by 48% than conventional batteries.The mode print copper slurry that adopts subsequently silk screen printing, forms and connects non-silver electrode 5, as shown in Figure 3,4.Connect non-silver electrode 5 and be also distributed short-term, connect isolated local silver electrode 4, in the direction of the thin grid perpendicular to described, the spacing of the non-silver electrode 5 of adjacent connection is 0.15mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of the non-silver electrode 5 of adjacent connection is 1mm, and the length that connects non-silver electrode 5 is 0.1mm.In annealing process subsequently, the non-silver electrode 5 of the connection of copper forms good ohmic contact with silver-colored localizing electrode 4, and as shown in Figure 4, in the present embodiment, main grid 6 also covers for connecting non-silver electrode 5 overall vertical view.Do not carve and wear reduced passivation resisting film 3 owing to connecting non-silver electrode 5, the region surface recombination rate that copper covers is still 1 × 10
4cm/s magnitude, the open circuit voltage 1.3mV of the battery of raising and efficiency absolute value 0.04%.Effectively reduce the consumption of silver-colored slurry, because copper slurry relative price is low, reduced the production cost of solar cell.
Embodiment bis-
The present embodiment provides a kind of crystal silicon solar energy battery alternative expression metal front electrode, as shown in Figure 1, adopt the p-type silicon chip of 156mm × 156mm to prepare solar cell as silicon base 1, wherein, the n type diffused layer 2 that is provided with phosphorus diffusion at the front surface of silicon base 1, sheet resistance is 95 Ω/.Above n type diffused layer 2, adopt SiNx:H that the about 702nm of PECVD deposition one deck is thick as surperficial reduced passivation resisting film 3, this reduced passivation resisting film 3 passivation n type diffused layer 2 effectively, before not depositing reduced passivation resisting film 3, recombination-rate surface is 1 × 10
6cm/s magnitude, after transpassivation, recombination-rate surface reduces to 1 × 10
4cm/s magnitude adopts silk screen printing silver slurry on reduced passivation resisting film 3, is with the difference of conventional batteries, silver slurry is distributed short-term, and in high-temperature sintering process, silver slurry burns reduced passivation resisting film 3, form good ohmic contact with n type diffused layer 2, form local silver electrode 4, as shown in Figure 2.In the present embodiment, in the direction of the thin grid perpendicular to described, the spacing of adjacent local silver electrode 4 is 0.14mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of adjacent local silver electrode 4 is 0.2mm, the length of local silver electrode 4 is 0.8mm, but at interface, contact zone, owing to having destroyed reduced passivation resisting film 3, local silver electrode 4 exists serious interface compound with n type diffused layer 2, and recombination-rate surface can reach 1 × 10
7cm/s magnitude.But with respect to conventional batteries, local silver electrode 4 has reduced shared area, only accounts for 3.4% of the gross area, silver slurry consumption is only 75mg, has reduced by 50% than conventional batteries, and recombination current density is 35fA/cm
2, reduced by 50% than conventional batteries.Adopt subsequently the mode of silk screen printing to print nickel slurry, form and connect non-silver electrode 5, as shown in Figure 3,4.Connect non-silver electrode 5 and be also distributed short-term, connect isolated local silver electrode 4, in the direction of the thin grid perpendicular to described, the spacing of the non-silver electrode 5 of adjacent connection is 0.15mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of the non-silver electrode 5 of adjacent connection is 0.14mm, and the length that connects non-silver electrode 5 is 0.8mm.In annealing process subsequently, the non-silver electrode 5 of the connection of nickel forms good ohmic contact with silver-colored localizing electrode 4, and as shown in Figure 4, in the present embodiment, main grid 6 also covers for connecting non-silver electrode 5 overall vertical view.Do not carve and wear reduced passivation resisting film 3 owing to connecting non-silver electrode 5, the region surface recombination rate that nickel covers is still 1 × 10
4cm/s magnitude, the open circuit voltage 1.4mV of the battery of raising and efficiency absolute value 0.07%.Effectively reduce the consumption of silver-colored slurry, because copper slurry relative price is low, reduced the production cost of solar cell.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the present invention is solved further describe; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. electrode before a crystal silicon solar energy battery alternative expression metal, comprise multiple row main grid (6) and the thin grid of multirow, thin grid are connected with main grid (6), it is characterized in that: the thin grid of every row comprise and are the distributed non-silver electrode of multiple connections (5) being arranged alternately and multiple local silver electrode (4); Wherein, local silver electrode (4) runs through reduced passivation resisting film (3) afterwards and p-n junction forms ohmic contact, connecting non-silver electrode (5) is arranged on the upper surface of reduced passivation resisting film (3), and in the thin grid of every row, connect the two ends of non-silver electrode (5) and adjacent local silver electrode (4) and form ohmic contact.
2. electrode before crystal silicon solar energy battery alternative expression metal according to claim 1, is characterized in that: the width of described main grid (6) in the direction that is parallel to thin grid is 0.1～10mm.
3. electrode before crystal silicon solar energy battery alternative expression metal according to claim 1 and 2, is characterized in that: the composition of described main grid (6) is at least one material in silver, copper, aluminium, tin, nickel.
4. electrode before crystal silicon solar energy battery alternative expression metal according to claim 1, it is characterized in that: described local silver electrode (4) is short-term distributed arrangement, in the direction of the thin grid perpendicular to described, the spacing of adjacent local silver electrode (4) is 0.1～10mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of adjacent local silver electrode (4) is 0.01～10mm, and the length of local silver electrode (4) is 0.1～50mm.
5. electrode before crystal silicon solar energy battery alternative expression metal according to claim 1, it is characterized in that: the non-silver electrode of described connection (5) is short-term distributed arrangement, in the direction of the thin grid perpendicular to described, the spacing of the non-silver electrode of adjacent connection (5) is 0.1～10mm; Be parallel in the direction of described thin grid, the Distances Between Neighboring Edge Points of the non-silver electrode of adjacent connection (5) is 0.1～10mm, and the length that connects non-silver electrode (5) is 0.01～50mm.
6. electrode before crystal silicon solar energy battery alternative expression metal according to claim 1, is characterized in that: the composition of the non-silver electrode of described connection (5) is at least one material in copper, aluminium, tin, nickel.
7. a preparation method for electrode before the crystal silicon solar energy battery alternative expression metal as described in any one in claim 1 to 6, is characterized in that the step of the method is as follows:
(a) provide a first finished product at least with silicon base (1), n type diffused layer (2) and reduced passivation resisting film (3), and reduced passivation resisting film (3), n type diffused layer (2) and silicon base (1) from top to bottom arrange, n type diffused layer (2) and silicon base (1) form p-n junction;
(b) silver paste that is distributed setting is set on the upper surface of reduced passivation resisting film (3);
(c) carry out sintering processes and make silver paste run through reduced passivation resisting film (3) afterwards and p-n junction formation ohmic contact, thereby form local silver electrode (4);
(d) connect non-silver electrode (5) and main grid (6) in the upper preparation of reduced passivation resisting film (3) again, guarantee that the two ends that connect non-silver electrode (5) connect corresponding adjacent local silver electrode (4), form thin grid;
(e) annealing in process makes to connect non-silver electrode (5) and forms ohmic contact with corresponding local silver electrode (4), thereby completes the preparation of the front electrode of crystal silicon solar energy battery alternative expression metal.
8. the preparation method of electrode before a kind of crystal silicon solar energy battery alternative expression metal according to claim 7, it is characterized in that: in described step (b), the formation method that forms the silver paste of local silver electrode (4) is silk screen printing or the printing of steel version or composite halftone printing or ink jet printing or shower nozzle extruding.
9. the preparation method of electrode before a kind of crystal silicon solar energy battery alternative expression metal according to claim 7, it is characterized in that: in described step (d), the formation method that connects non-silver electrode (5) is silk screen printing or the printing of steel version or composite halftone printing.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328731A (en) * | 2016-11-08 | 2017-01-11 | 刘锋 | Solar cell with high conversion efficiency |
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| US20140038339A1 (en) * | 2012-08-06 | 2014-02-06 | Atomic Energy Council-Institute Of Nuclear Energy Research | Process of manufacturing crystalline silicon solar cell |
| CN103594564A (en) * | 2013-12-03 | 2014-02-19 | 常州天合光能有限公司 | Full back electrode solar cell and preparation method thereof |
| CN103811566A (en) * | 2014-02-21 | 2014-05-21 | 陕西众森电能科技有限公司 | Solar cell with front point contact structure and novel front electrode |
| CN204067377U (en) * | 2014-09-03 | 2014-12-31 | 常州天合光能有限公司 | Electrode before crystal silicon solar energy battery alternative expression metal |
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2014
- 2014-09-03 CN CN201410447527.9A patent/CN104183657A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140038339A1 (en) * | 2012-08-06 | 2014-02-06 | Atomic Energy Council-Institute Of Nuclear Energy Research | Process of manufacturing crystalline silicon solar cell |
| CN103594564A (en) * | 2013-12-03 | 2014-02-19 | 常州天合光能有限公司 | Full back electrode solar cell and preparation method thereof |
| CN103811566A (en) * | 2014-02-21 | 2014-05-21 | 陕西众森电能科技有限公司 | Solar cell with front point contact structure and novel front electrode |
| CN204067377U (en) * | 2014-09-03 | 2014-12-31 | 常州天合光能有限公司 | Electrode before crystal silicon solar energy battery alternative expression metal |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328731A (en) * | 2016-11-08 | 2017-01-11 | 刘锋 | Solar cell with high conversion efficiency |
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Application publication date: 20141203 |
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| RJ01 | Rejection of invention patent application after publication |