CN106328731A - Solar cell with high conversion efficiency - Google Patents
Solar cell with high conversion efficiency Download PDFInfo
- Publication number
- CN106328731A CN106328731A CN201610980281.0A CN201610980281A CN106328731A CN 106328731 A CN106328731 A CN 106328731A CN 201610980281 A CN201610980281 A CN 201610980281A CN 106328731 A CN106328731 A CN 106328731A
- Authority
- CN
- China
- Prior art keywords
- low
- anelectrode
- silicon chip
- sections
- conversion efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell with high conversion efficiency. The solar cell comprises a silicon wafer, a PN knot, an antireflection film, positive electrodes and negative electrodes, the light interception surface of the silicon wafer is a rough surface formed by directional alignment of multiple cone structures, the PN knot and the antireflection film are sequentially laminated on the light interception surface, the negative electrodes penetrate the antireflection film and the PN knot to be fixed on the light interception film, the positive electrodes form on the reverse side of the light interception surface of the silicon wafer, the positive electrodes array on the reverse side of the reverse side along the first direction and include four low-resistivity sections and three high-resistivity sections, the low-resistivity sections are arranged along the second direction perpendicular to the first direction at intervals, and the length of the two low-resistivity sections close to the edge of the silicon wafer is smaller than that of the two low-resistivity located in the middle. By the above mode, cost of the solar cell can be lowered.
Description
Technical field
The present invention relates to photovoltaic art, particularly relate to the solaode of a kind of high conversion efficiency.
Background technology
In the case of current energy shortage, solaode, as a kind of Renewable resource, attracts wide attention.Separately
Outward, owing to solaode will not cause environmental pollution, therefore various places, solaode industry alive boundary are by big great pass
Note.
In the prior art, solar cell design is that front side of silicon wafer (sensitive surface) prints negative electrode, back up positive electricity
Pole, the anelectrode at the back side is typically to be arranged on silicon chip with the form of a whole piece, but is produced to effectively collect silicon chip
Electric current, it will usually select the relatively low material of resistance value as bus-bar, the conductive material such as such as silver slurry, but low due to silver slurry etc.
The conductive material cost intensive of resistance, hence in so that the cost of solaode increases.
Summary of the invention
The technical problem that present invention mainly solves is to provide the solaode of a kind of high conversion efficiency, it is possible to reduce the sun
The cost of energy battery.
For solving above-mentioned technical problem, the technical scheme that the present invention uses is: provide a kind of high conversion efficiency too
Sun energy battery, including silicon chip, PN junction, antireflective coating, anelectrode and negative electrode, the sensitive surface of described silicon chip is for be tied by multiple vertebral bodys
The rough surface that structure aligns, described PN junction and described antireflective coating are sequentially laminated on described sensitive surface, described negative
Electrode is fixed on described sensitive surface through described antireflective coating and described PN junction, and described anelectrode is formed at described silicon chip light
The back side that face is relative, described anelectrode is arranged in the described back side in the first direction, and described anelectrode includes four low-resistance sections and three
The second direction interval that individual high resistant section, described four low-resistance sections edge and described first direction are vertical is arranged, and near described silicon chip
The length being shorter in length than two the low-resistance sections being positioned at centre of two low-resistance sections at edge.
Wherein, the thickness of described anelectrode is 30～40 microns.
The invention has the beneficial effects as follows: be different from the situation of prior art, the solar-electricity of the high conversion efficiency of the present invention
Pond arranges anelectrode on the back side of silicon chip, and anelectrode is to be made up of low-resistance section and high resistant section, by high resistant section part energy
Enough reduce the cost of solaode.
Accompanying drawing explanation
Fig. 1 is the structural representation of the solaode of embodiment of the present invention high conversion efficiency.
Fig. 2 be the solaode of the high conversion efficiency shown in Fig. 1 look up structural representation.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
See also Fig. 1 and Fig. 2, the solaode of the high conversion efficiency of the embodiment of the present invention include P-type silicon sheet 1,
PN junction 2, antireflective coating 3, anelectrode 4 and negative electrode 5, the sensitive surface of silicon chip 1 is to be aligned by multiple vertebral body structures
Rough surface, PN junction 2 and antireflective coating 3 are sequentially laminated on sensitive surface, and negative electrode 5 is fixed on through antireflective coating 3 and PN junction 2
On sensitive surface, anelectrode 4 is formed at the back side that silicon chip 1 sensitive surface is relative, and anelectrode 4 is arranged in the back side, positive electricity in the first direction
Pole 4 includes four low-resistance sections 41a, 41b, 41c, 41d and three high resistant sections 42a, 42b, 42c, four low-resistance sections 41a, 41b,
41c, 41d along and the vertical second direction interval of first direction arrange, and near two low-resistance sections 41a, the 41d at silicon chip 1 edge
Be shorter in length than be positioned at centre length 41b of two low-resistance sections, 41c.In the present embodiment, the thickness of anelectrode 4 be 30～
40 microns.Three high resistant sections 42a, the length of 42b, 42c both can be the same or different.
By the way, the solaode of the high conversion efficiency of the present invention arranges anelectrode on the back side of silicon chip,
And anelectrode is to be made up of low-resistance section and high resistant section, the cost of solaode can be reduced by high resistant section part.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
Equivalent structure or equivalence flow process that bright description and accompanying drawing content are made convert, or are directly or indirectly used in other relevant skills
Art field, is the most in like manner included in the scope of patent protection of the present invention.
Claims (2)
1. the solaode of a high conversion efficiency, it is characterised in that include silicon chip, PN junction, antireflective coating, anelectrode and bear
Electrode, the sensitive surface of described silicon chip is the rough surface aligned by multiple vertebral body structures, described PN junction and described subtract
Reflectance coating is sequentially laminated on described sensitive surface, described negative electrode through described antireflective coating and described PN junction be fixed on described in be subject to
On bright finish, described anelectrode is formed at the back side that described silicon chip sensitive surface is relative, and described anelectrode is arranged in institute in the first direction
Stating the back side, described anelectrode includes that four low-resistance sections and three high resistant sections, described four low-resistance sections are hung down along with described first direction
Straight second direction interval is arranged, and near described silicon chip edge two low-resistance sections be shorter in length than that to be positioned at two of centre low
The length of resistance section.
The solaode of high conversion efficiency the most according to claim 1, it is characterised in that the thickness of described anelectrode is
30～40 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610980281.0A CN106328731A (en) | 2016-11-08 | 2016-11-08 | Solar cell with high conversion efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610980281.0A CN106328731A (en) | 2016-11-08 | 2016-11-08 | Solar cell with high conversion efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328731A true CN106328731A (en) | 2017-01-11 |
Family
ID=57816693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610980281.0A Pending CN106328731A (en) | 2016-11-08 | 2016-11-08 | Solar cell with high conversion efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328731A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5928438A (en) * | 1995-10-05 | 1999-07-27 | Ebara Solar, Inc. | Structure and fabrication process for self-aligned locally deep-diffused emitter (SALDE) solar cell |
| CN104183657A (en) * | 2014-09-03 | 2014-12-03 | 常州天合光能有限公司 | Crystalline silicon solar cell alternate metal front electrode and preparation method thereof |
| CN105118874A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Crystalline silicon solar cell and manufacture method thereof |
-
2016
- 2016-11-08 CN CN201610980281.0A patent/CN106328731A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5928438A (en) * | 1995-10-05 | 1999-07-27 | Ebara Solar, Inc. | Structure and fabrication process for self-aligned locally deep-diffused emitter (SALDE) solar cell |
| CN104183657A (en) * | 2014-09-03 | 2014-12-03 | 常州天合光能有限公司 | Crystalline silicon solar cell alternate metal front electrode and preparation method thereof |
| CN105118874A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Crystalline silicon solar cell and manufacture method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170111 |