CN104183516B - The evaluating apparatus of semiconductor device - Google Patents
The evaluating apparatus of semiconductor device Download PDFInfo
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- CN104183516B CN104183516B CN201410174467.8A CN201410174467A CN104183516B CN 104183516 B CN104183516 B CN 104183516B CN 201410174467 A CN201410174467 A CN 201410174467A CN 104183516 B CN104183516 B CN 104183516B
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- semiconductor substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A kind of evaluating apparatus of semiconductor device, it is electrically evaluated to the semiconductor device being formed in Semiconductor substrate (100), and the evaluating apparatus of this semiconductor device have：Maintaining part (2), Semiconductor substrate (100) is maintained on surface (2A) for it；And test section (3), the concavo-convex detection on its surface (2A) to maintaining part (2).Maintaining part (2) comprises multiple groove portions (20) on surface (2A), multiple groove portions (20) are formed as, when Semiconductor substrate (100) is maintained on surface (2A), overlap with the periphery of Semiconductor substrate (100), and, a part is compared with the periphery of Semiconductor substrate (100) positioned at outside.
Description
Technical field
The present invention relates to a kind of evaluating apparatus of semiconductor device, especially, be related to a kind of can be to semiconductor device
The evaluating apparatus of the semiconductor device that position is detected.
Background technology
In the manufacturing process of semiconductor device, the shape before Semiconductor substrate is cut into each semiconductor device sometimes
Under state, the electrical characteristic of the semiconductor device being formed on a semiconductor substrate is evaluated.Semiconductor device in the case of being somebody's turn to do
Evaluating apparatus, generally have：Workbench (maintaining part), it keeps Semiconductor substrate in evaluation；And probe, its with formed
The welding disk electrical connection of semiconductor device on a semiconductor substrate.When evaluating, in advance by the center of Semiconductor substrate
Configuration is at the reference position of workbench.By arranging in the manner described above such that it is able to will be formed in Semiconductor substrate
Multiple semiconductor devices disposably carry out para-position with respect to workbench, and probe and workbench can be made after para-position to carry out
Relative movement, evaluates to each semiconductor device respectively.Working as by the center configuration of Semiconductor substrate
Method at the reference position of platform, the method with the outer circumference end using Semiconductor substrate.
In Japanese Unexamined Patent Publication 6-302676 publication, disclose a kind of wafer foreign body detecting device, it is by wafer
When putting on the table, the outer peripheral portion of the wafer stretching out to outer peripheral side compared with workbench is irradiated to grow and penetrates light, using with
The rear side of this outer peripheral portion is adjacent and mirror that be arranged on the downside of wafer makes to fall to penetrating light reflection, thus collecting the week of wafer
The image of edge.
But, because the outer peripheral portion of Semiconductor substrate is formed with rounded corner in a thickness direction, or tilt, because
This, be difficult to simple after being observed in the form of image and accurately the peripheral end of Semiconductor substrate detected.
Further, since have passed through each operation of the manufacture method of semiconductor device, because in the face in each operation fluctuation etc. and
The face shaping making the peripheral part of Semiconductor substrate becomes inconsistent, so, carry out observing in the form of image and basis should
Image is simple and accurately the peripheral end of Semiconductor substrate is carried out detecting that this way is more difficult.Therefore, partly leading
In the evaluating apparatus of body device, with high accuracy, to configuration, Semiconductor substrate on the table carries out location confirmation is difficult.
Content of the invention
The present invention proposes to solve the above problems.Present invention is primarily targeted at providing a kind of quasiconductor
The evaluating apparatus of device, it can be when by Semiconductor substrate configuration in maintaining part, with high accuracy to partly leading in maintaining part
The position of body substrate is detected.
The evaluating apparatus of semiconductor device involved in the present invention, enter to the semiconductor device being formed on a semiconductor substrate
Row is electrically evaluated, and wherein, the evaluating apparatus of this semiconductor device have：Maintaining part, Semiconductor substrate is kept from the teeth outwards by it；
And test section, it detects to the concavo-convex of surface of maintaining part.Maintaining part comprises multiple groove portions, multiple groove portions from the teeth outwards
Be formed as, when keeping from the teeth outwards Semiconductor substrate, overlap with the periphery of Semiconductor substrate, and, a part of with partly lead
The periphery of body substrate is compared positioned at outside.
According to the present invention, provide a kind of evaluating apparatus of semiconductor device, it can be with high accuracy to half in maintaining part
The position of conductor substrate is detected.
The above-mentioned and other purpose of the present invention, feature, scheme and advantage, by be associated with accompanying drawing understood with regard to
The present invention's is described further below, can be made apparent from.
Brief description
Fig. 1 is the figure of the evaluating apparatus for the semiconductor device involved by embodiment 1 is described.
Fig. 2 is the figure for the contact probe head involved by embodiment 1 is described.
Fig. 3 is the top view of the maintaining part 2 of the evaluating apparatus of the semiconductor device involved by embodiment 1.
Fig. 4 is profile when line segment IV- line segment IV from Fig. 3 is observed and represents the figure measuring example.
Fig. 5 is the top view of the variation representing the maintaining part involved by embodiment 1.
Fig. 6 is the figure for the maintaining part involved by embodiment 2 is described.
Fig. 7 is the top view of the maintaining part 2 of the evaluating apparatus of the semiconductor device involved by embodiment 2.
Fig. 8 is profile when line segment VIII- line segment VIII from Fig. 7 is observed and represents the figure measuring example.
Fig. 9 is the top view of the variation representing the maintaining part involved by embodiment 2.
Specific embodiment
Below, based on accompanying drawing, embodiments of the present invention are illustrated.Additionally, in figures in the following, to identical or
Considerable part marks identical reference number, and the description thereof will be omitted.
(embodiment 1)
With reference to Fig. 1, the evaluating apparatus 1 of the semiconductor device involved by embodiment 1 are illustrated.Semiconductor device
Evaluating apparatus 1 are the evaluations to the semiconductor device that the semiconductor device being formed on a semiconductor substrate 100 is electrically evaluated
Device.In the present embodiment, Semiconductor substrate 100 is formed with arbitrary quasiconductor dress on the surface 100A with flatness
Put.This semiconductor device can be for example partly the leading of longitudinal type flowing super-high-current on the thickness direction of Semiconductor substrate 100
Body device.The evaluating apparatus 1 of the semiconductor device involved by present embodiment have maintaining part 2 and test section 3.Additionally, at this
In embodiment, using the face parallel with the surface 2A of maintaining part 2 as x/y plane.
Maintaining part 2 is configured to Semiconductor substrate 100 is maintained on the 2A of surface.Now, the surface 2A of maintaining part 2
Profile arranges larger compared with the profile of the surface 100A of Semiconductor substrate 100.That is, Semiconductor substrate 100 is being maintained at
When on the surface 2A of maintaining part 2, maintaining part 2 is formed as, and a part is compared with the periphery of Semiconductor substrate 100 positioned at outside.
The surface 2A of maintaining part 2 is provided with vacuum adsorption mechanism, to be configured with Semiconductor substrate 100 on the 2A of this surface
When, can adsorb and keep Semiconductor substrate 100.There is reference position 2C in the surface 2A regulation of maintaining part 2.The base of maintaining part 2
It is when being maintained at Semiconductor substrate 100 on the 2A of surface that level puts 2C, on the surface 2A of maintaining part 2 should be with Semiconductor substrate
The position that 100 center 100C overlaps.
The surface 2A of maintaining part 2 is set to, can with the electrode of the semiconductor device as longitudinal type and quasiconductor lining
Electrode pad 101 (with reference to Fig. 2) electrical connection that the back side at bottom 100 is formed.Surface 2A is via on the side being arranged on maintaining part 2
Connecting portion 4 and the holding wire 6 that is arranged on this connecting portion 4 and electrically connect with control unit 5.
Test section 3 can detect to the concavo-convex of surface 2A of maintaining part 2.Test section 3 is the Distance-sensing of optical profile type
Device, it is set to, by irradiation light and detect this reflected light such that it is able to measure the distance of test section 3 and reflecting surface (below,
It is also referred to as the height of reflecting surface).Specifically it is configured to, in the table of the surface 2A with respect to maintaining part 2 and Semiconductor substrate 100
Face 100A, when with their generally perpendicular direction irradiation lights, can examine to the reflected light from above-mentioned surface 2A, 100A
Survey.As long as the resolution of test section 3 is less than or equal to the thickness of Semiconductor substrate 100, for example, can be 0.5mm.
Test section 3 is fixed on probe matrix 10.Probe matrix 10 by test section 3, contact probe head 30, to test section 3 and
The insulating properties matrix 8 that contact probe head 30 is kept is constituted.Probe matrix 10 is set to, using be connected with insulating properties matrix 8
Mobile arm 9, can carry out relative movement with respect to maintaining part 2.
With reference to Fig. 2, contact probe head 30 is set to, by with the electrode as semiconductor device and in Semiconductor substrate 100
Surface 100A on formed electrode pad 101 contact such that it is able to electrically connect with semiconductor device.In semiconductor devices,
Electrode pad 101 be formed with multiple in the case of, contact probe head 30 can be can abut with multiple electrodes pad 101 respectively
Mode and be formed with multiple.Contact probe head 30 is made up of following part：Contact site 31, its be formed at Semiconductor substrate 100
On the electrode pad 101 of semiconductor device mechanically and electrically contact；Leading section 32, it has this contact site 31；Press-in portion
33, it enables this leading section 32 to enter line slip with respect to probe matrix；Setting unit 34, it is fixed on probe matrix；And
Electrical connection section 35, it is electrically connected with contact site 31, becomes to outside lead-out terminal.It is incorporated with spring inside press-in portion 33
Part, press-in portion 33 is passed through to connect leading section 32 and setting unit 34 via this spring members, is thus configured to make leading section
32 enter line slip with respect to probe matrix.The material constituting contact probe head 30 can be using any materials with electric conductivity, example
If using copper (Cu), tungsten (W), the such metal material of tungsten-rhenium alloy.In addition, contact site 31 improves and durable from electric conductivity
Property the viewpoint such as improve and set out, for example can be formed the surface of above-mentioned metal material by golden (Au), palladium, tantalum (Ta), platinum (Pt) etc.
The structure being covered.Contact probe head 30 via metallic plate (not shown) being arranged in insulating properties matrix 8 etc. with connecting portion 7
Electrical connection, and electrically connect with control unit 5 via the holding wire 6 being arranged on this connecting portion 7.Probe matrix is set to, energy
Enough carry out relative movement using mobile arm 9 with respect to maintaining part 2.
With reference to Fig. 3,4 groove portions 20 are provided with maintaining part 2.Fig. 3 is to maintain Semiconductor substrate 100 on the 2A of surface
When maintaining part 2 top view.4 groove portions 20 are all with outside from side (inner circumferential side) residing for the 2C of reference position in maintaining part 2
The mode that the week side of boss extends is formed.That is, 4 groove portions 20 are formed respectively in the way of the radial direction along maintaining part 2.In addition, 4 groove portions 20
It is set to, and the distance between the reference position 2C of maintaining part 2 all same, and, adjacent 2 groove portions 20 and reference position 2C
The central angle being formed is 90 °.That is, be formed as, 2 groove portions are relative to each other across reference position 2C, and, with by above-mentioned 2
On the orthogonal line segment of line segment that individual groove portion links, other 2 groove portions 20 are relative to each other across reference position 2C.In addition, if
For from different angles, then it is that multiple groove portions 20 equally spaced configure in the circumferential.Now, it is set to, across benchmark position
Put 2C and between relative 2 groove portions, the distance between end of inner circumferential side is shorter than the external diameter of Semiconductor substrate 100, outer circumferential side
The distance between end than Semiconductor substrate 100 outer path length.In other words, overlapped with center 100C with reference position 2C
When Semiconductor substrate 100 is maintained on the surface 2A of maintaining part 2 mode, a part for groove portion 20 is set to and Semiconductor substrate
100 periphery is compared and is exposed to outside.Here, by Semiconductor substrate 100 in the way of reference position 2C is overlapped with center 100C
It is maintained on the surface 2A of maintaining part 2 and refers not only to reference position 2C and the on all four situation of center 100C, be also included in base
There is the situation of the position deviation under the degree that can be allowed between the 100C of level Zhi2CYu center.
Groove portion 20 is for example formed by the processing that maintaining part 2 is carried out cutting etc., and the bottom surface 20A shown in Fig. 4 (a) is carried out
Mirror finish.Thus, bottom surface 20A is formed as the high reflecting surface of reflectance.
With the radial direction along Semiconductor substrate 100, the depth counted from the surface 2A of maintaining part 2 is or not the bottom surface 20A of groove portion 20
With mode and be formed as step-like.Specifically, it is formed with from surface 2A the depth phase to the 20A of bottom surface in groove portion 20
To shallower region (top 21) with from the relatively deep region of depth to the 20A of bottom surface for the surface 2A (bottom 22).In groove
In portion 20, top 21 is formed at the reference position 2C side of maintaining part 2, and bottom 22 is formed at the outer circumferential side of maintaining part 2.Now, on
The upper face of portion 21 and bottom 22 is abreast arranged with surface 2A.In addition, in 4 groove portions 20, with top 21 and bottom 22
Boundary portion (the periphery side end on the top 21) mode all equal with the distance of reference position 2C formed.
Across reference position 2C between relative 2 groove portions 20, between the boundary portion of top 21 and bottom 22 away from
Arrange longer from compared with the external diameter of Semiconductor substrate 100.At this point it is possible to be set to, this distance and Semiconductor substrate 100
1/2 of length difference between external diameter, becomes the feasible value of the position deviation of reference position 2C and center 100C.If groove portion 20
Depth (depth of top 21 and bottom 22) and top 21 and the depth difference of bottom 22, are used for the optical profile type of test section 3 use
The resolution that has of range sensor big, then can arbitrarily be selected, for example as with the depth on top 21, top
The order of magnitude of the same degree such as the thickness of the depth difference between 21 and bottom 22 and Semiconductor substrate 100, is set to 1mm
?.
With reference to Fig. 3 and Fig. 4 (a), be formed as, by Semiconductor substrate in the way of being overlapped with center 100C by reference position 2C
100 when being maintained on the surface 2A of maintaining part 2, and each groove portion 20 is overlapped with the periphery of Semiconductor substrate 100, and, a part with
The periphery of Semiconductor substrate 100 is compared positioned at outside.That is, on the surface 2A that Semiconductor substrate 100 is maintained at maintaining part 2
When, it is formed at maintaining part 2 compared with the periphery of Semiconductor substrate 100 in the region of the part in the region in outside
On the bottom surface 20A of groove portion 20 expose, other regions are exposed the surface 2A of maintaining part 2.
Below, with reference to Fig. 1～Fig. 4, to realized using the evaluating apparatus of the semiconductor device involved by present embodiment
The evaluation methodology of semiconductor device illustrates.In the present embodiment, Semiconductor substrate 100 in its periphery from having flatness
Region to end 110 for the surface 100A in, be formed with the inclined plane 120 tilting with respect to surface 100A.That is, inclined plane
120 tilt with respect to the surface 2A and bottom surface 20A of maintaining part 2.
First, configuring semiconductor substrate 100 (operation (S10)) on the surface 2A of maintaining part 2.Now, Semiconductor substrate
100 configurations are at the position that the whole semiconductor devices as measure object can be measured by probe matrix 10, and are subject to vacuum
Absorption.Now, expose the table of Semiconductor substrate 100 compared with the periphery of Semiconductor substrate 100 in the region of inner side
Face 100A and inclined plane 120.On the other hand, expose in the region in outside compared with the periphery of Semiconductor substrate 100
The surface 2A of maintaining part 2 and a part for 4 groove portions 20.Additionally, in the case of the temperature characterisitic evaluating semiconductor device, making
With having the maintaining part 2 of heating arrangements, in the case, before this operation (S10), 2 liters of maintaining part can be made in advance
Temperature is to set point of temperature.
Then, test section 3 is made to carry out relative movement with respect at least 3 groove portions 20, while by test section 3 to guarantor
The concavo-convex of surface 2A holding portion 2 is detected (operation (S20)).Now, if surface 2A is set to x/y plane, do not make detection
Portion 3 moves along the z-axis direction, only moves in x/y plane.Thus, it is located at the surface of Semiconductor substrate 100 in test section 3
When on 100A, the light irradiating from test section 3 is reflected using surface 100A and detected portion 3 detects, determines detection
The height h1 with respect to surface 100A for the portion 3.In addition, be located at the inclined plane being formed at Semiconductor substrate 100 periphery in test section 3
When on 120, because inclined plane 120 there occurs inclination with respect to the direct of travel of the light irradiating from test section 3, therefore, that is,
So that the light irradiating from test section 3 is reflected by inclined plane 120, also will not reach test section 3 it is impossible to obtain test section 3 phase
Measurement result for the height of inclined plane 120.And, when test section 3 is located on the surface 2A of maintaining part 2, from test section 3
The light irradiating is reflected using surface 2A and detected portion 3 detects, determines the height that test section 3 is with respect to surface 2A
h2.When test section 3 is located on the top 21 of groove portion 20, the light irradiating from test section 3 utilizes top 21 top surface (bottom surface 20A
Top) reflected and detected portion 3 detects, determine the height h3 that test section 3 is with respect to top 21 top surface.In test section
When on 3 bottoms 22 being located at groove portion 20, the light irradiating from test section 3 is carried out using bottom 22 top surface (bottom of bottom surface 20A)
Simultaneously detected portion 3 detects for reflection, determines the height h4 that test section 3 is with respect to bottom 22 top surface.
When making test section 3 carry out relative movement with respect to maintaining part 2 using mobile arm 9, moving direction is in x/y plane
Interior can be any direction, for example, make test section 3 along from the reference position 2C of maintaining part 2 towards direction (Fig. 4 (a) of groove portion 20
Shown arrow A) mobile.Fig. 4 (b) illustrates mensure example now.It is located at the surface 100A of Semiconductor substrate 100 in test section 3
When upper, surface 100A is detected with the height h1 detected portion 3 of test section 3.Then, if test section 3 reaches in inclined plane 120,
Then test section 3 cannot catch the reflected light from inclined plane 120, and test section 3 cannot measure with respect to the height of inclined plane 120.
Then, if test section 3 reaches in groove portion 20, first, the bottom surface that test section 3 is with respect to top 21 is detected by test section 3
The height h3 of 20A, then, detects, by test section 3, the height h4 that test section 3 is with respect to the bottom surface 20A of bottom 22.Then, such as
Fruit test section 3 reaches on the 2A of surface, then detect the height h2 that test section 3 is with respect to surface 2A.Now, test section 3 with respect to
The actual height (can not measure) of the inclined plane 120 of Semiconductor substrate 100 and end 110 and test section 3 push up with respect to top 21
Difference in height between the height h3 in face (top of bottom surface 20A) be h3-h1 about (being at least greater than or equal to h3-h2), with half
Thickness h 2-h1 of conductor substrate 100 is compared and is arranged larger.As a result, can using test section 3 with high accuracy to from partly leading
The distance on the top 21 that the outer circumferential side of body substrate 100 exposes, i.e. in the radially detection of maintaining part 2 (or Semiconductor substrate 100)
Distance (L2 in Fig. 4 (b)) to height h3 is measured.
In this operation (S20), by maintaining part 2 radially to make test section 3 move across by way of each groove portion 20
Dynamic such that it is able to the boundary portion determining top 21 and bottom 22 and the top 21 exposed from the periphery of Semiconductor substrate 100 away from
From L2.Thereby, it is possible to judge Semiconductor substrate 100 periphery end 110 with respect to this boundary portion to be located at apart from L2
Reference position 2C side.Similarly, by being also carried out similarly measuring such that it is able to derive maintaining part 2 for other groove portions 20
Surface 2A on Semiconductor substrate 100 position, i.e. the center 100C of Semiconductor substrate 100 is with respect to the benchmark of maintaining part 2
The position of position 2C.
Below, with respect to the Semiconductor substrate after carrying out location confirmation using test section 3 in operation (S20) before
The electrode pad 101 of the semiconductor device being constituted on 100, is positioned (operation (S30)) to contact probe head 30.Specifically come
Say, with reference to Fig. 2 (a), first, contact probe head 30 is configured directly over the z-axis direction of electrode pad 101.Then, with reference to Fig. 2
B (), makes contact probe head 30 decline towards electrode pad 101, so that contact site 31 is contacted with electrode pad 101.With reference to Fig. 2 (c), lead to
Cross the distance making contact probe head 30 decline regulation further, thus, press-in portion 33 makes the spring members of inside shrink, on one side
It is press-fit in setting unit 34.Thereby, it is possible to make the contact pressure between contact site 31 and electrode pad 101 fully increase.
Additionally, being formed with multiple contact probe heads 30 on probe matrix 10, and make the situation that it is abutted respectively with multiple electrodes pad 101
Under, preferably make the depth of parallelism of contact site 31 in contact probe head 30 consistent before this operation (S30) in advance.
Then, (operation (S40)) is measured to electrical characteristic of semiconductor device etc..For example, it is judged as after measuring
Bad semiconductor device removes in operation below.
As described above, the evaluating apparatus of the semiconductor device involved by present embodiment, shape on the surface 2A of maintaining part 2
Become to have multiple groove portions 20, this groove portion 20 multiple are formed as, when being maintained at Semiconductor substrate 100 on the 2A of surface, with quasiconductor
The periphery of substrate 100 overlaps, and, a part compared with the periphery of Semiconductor substrate 100 positioned at outside.Therefore, for partly leading
The end 110 of the periphery of body substrate 100, the region inside the periphery positioned at Semiconductor substrate 100 and be located at Semiconductor substrate
Periphery outside region between, the difference (difference of height) with test section distance can be increased to more than or equal to half
Thickness h 2-h1 of conductor substrate 100.Therefore, compared with the situation that groove portion 20 is not formed on the surface 2A of maintaining part 2, energy
Enough improve the accuracy of detection that the end 110 of the periphery to Semiconductor substrate 100 is detected using test section 3.And, due to
Top 21 and bottom 22 are provided with groove portion 20, therefore, it is possible to the difference of top 21 and bottom 22 and the distance of test section (highly
Difference) detected.Thus, even if the end of outer circumferential side there occurs the situation of defect equivalent damage, in this end in groove portion 20
On be attached with foreign body etc. in the case of it is also possible to high accuracy to the boundary portion of top 21 and bottom 22, with respect to quasiconductor lining
Being detected apart from L2 of bottom peripheral end.As a result, the location confirmation of the Semiconductor substrate 100 in maintaining part 2 can be improved
Precision.
In embodiment 1, groove portion 20 is arranged at 4 positions, but is not limited to this.In addition, each groove portion
20 are set to, and the distance between the reference position 2C of maintaining part 2 all same, and adjacent 2 groove portions 20 and reference position 2C
The central angle being formed is 90 °, but is not limited to this.For example, referring to Fig. 5,8 groove portions 20 can be used as the base with maintaining part 2
Level puts different 2 groups of distance of 2C, and is separately positioned on 4 positions.Now, the groove portion 20 being for example included in each group is permissible
It is configured in the way of each groove portion 20 is misaligned with the line segment that reference position 2C links.Thus, even for having difference
External diameter Semiconductor substrate 100 it is also possible to the location confirmation with respect to maintaining part 2 is carried out on same maintaining part 2, because
This, not necessarily correspond to the external diameter of Semiconductor substrate 100 and newly prepare maintaining part 2.
(embodiment 2)
Below, with reference to Fig. 6～Fig. 8, the evaluating apparatus 1 of the semiconductor device involved by embodiment 2 are illustrated.Real
Apply the evaluating apparatus 1 of the semiconductor device involved by mode 2, substantially have and the semiconductor device involved by embodiment 1
Evaluating apparatus 1 identical structure, but its difference is, maintaining part 2, on the 2A of its surface, is becoming Semiconductor substrate 100
In the region (peripheral part of surface 2A) of outer circumferential side, there is recess, groove portion 20 is formed in recess.
Recess is arranged at the reference position 2C of maintaining part 2 at a certain distance detached position.Specifically, recess with
Following manner is constituted, i.e. with respect to the top bar 23 of the toroidal being set on the 2A of surface centered on the 2C of reference position,
Its outer circumferential side is provided with the way of surrounding top bar 23 gets out of a predicament or an embarrassing situation 24.
Groove portion 20 is formed as, and overlaps with the heavy section specifying Semiconductor substrate periphery, and, a part and quasiconductor lining
The periphery at bottom is compared positioned at outside.That is, groove portion 20 be arranged on get out of a predicament or an embarrassing situation 24 surface on.The end of the reference position 2C side of groove portion 20
Portion is arranged on top bar 23 and get out of a predicament or an embarrassing situation 24 boundary portion or the vicinity of boundary portion.The end of the outer circumferential side of groove portion 20 and top 21
It is set to the boundary portion of bottom 22, the distance with respect to reference position 2C and the center from Semiconductor substrate are to periphery
Distance is compared longer.
By forming said structure, it is the thinner wall section 130 that central side has thinner thickness in Semiconductor substrate 100, thin-walled
The outer circumferential side in portion 130 has the thickness heavy section 140 thicker than thinner wall section 130, i.e. the so-called Semiconductor substrate with frame side
In the case of 100 it is also possible to by the diameter of top bar 23 is set smaller than or be equal to thinner wall section 130 diameter, thus will
Semiconductor substrate 100 with frame side configures in maintaining part 2, further, it is possible to obtain the effect same with embodiment 1.
In embodiment 1 and 2, groove portion 20 internally forms top 21 and bottom 22 and constitutes step-like, but does not limit
Due to this.The bottom surface 20A of groove portion 20 could be arranged to a plane, without step.Even if formation said structure, it is being located at half
Region inside the periphery of conductor substrate 100 and being located between the region outside the periphery of Semiconductor substrate 100, can by with
The difference (difference of height) of test section distance increases to the thickness (h2-h1) more than or equal to Semiconductor substrate 100.Cause
This, at end (end of the groove portion 20 of the outer circumferential side of the maintaining part) place of the outer circumferential side of groove portion 20, do not have defect or indentation etc. to damage
In the case of hindering and also not adhering to foreign body etc., can obtain and the same effect of embodiment 1 and 2.
In addition, in embodiment 1 and 2, the distance on the top 21 exposed using the outer circumferential side from Semiconductor substrate 100
L2, is detected to the position of the Semiconductor substrate 100 in maintaining part 2, but is not limited to this.For example, it is possible to be judged as
In maintaining part 2 radially, the end 110 of the periphery of Semiconductor substrate 100 is with respect to the bottom 22 of groove portion 20 and surface 2A
Boundary portion is located at reference position 2C side the total of height h4 and height h3 is detected apart from L1.Even if formation said structure,
At end (boundary portion of the bottom 22 and surface 2A) place of the outer circumferential side of groove portion 20, there is no defect or indentation equivalent damage and do not have yet
In the case of having attachment foreign body etc., can obtain and the same effect of embodiment 1 and 2.
In addition, in embodiment 1 and 2, the boundary portion of top 21 and bottom 22 is formed as with the distance of reference position 2C,
Multiple groove portions 20 are equal, but are not limited to this.Can also be formed as with respect to reference position 2C different away from
From.Even if formation said structure, by grasp in advance this boundary portion and reference position 2C position relationship data such that it is able to
The boundary portion of the top 21 according to each groove portion 20 and bottom 22 with cannot measured zone distance, and with high precision test maintaining part
The set location of the Semiconductor substrate 100 on 2 surface 2A.
In addition, in embodiment 1 and 2, the bottom surface 20A of groove portion 20 has carried out mirror finish, but is not limited to this.Example
As passed through to be formed with metal film on the 20A of bottom surface, thus forming reflecting surface by metal film.In addition, reflecting surface can also lead to
Cross gold-plated formation.Even if formation said structure, due to the reflectance of the light on the 20A of bottom surface can be improved, therefore, it is possible to obtain with
The same effect of embodiment 1 and 2.
In addition, in embodiment 1 and 2, probe matrix 10 is configured to carry out relative movement with respect to maintaining part 2,
But it is not limited to this.For example, it is possible to be set to make the maintaining part 2 being capable of relative movement with respect to probe matrix.Even if being formed
Said structure is it is also possible to obtain and present embodiment identical effect.
In addition, in embodiment 1 and 2, test section 3 is arranged on probe matrix 10, but is not limited to this.Test section
3 can also be provided independently from probe matrix 10.
In addition, in embodiment 1 and 2, contact probe head 30 is configured to, there is using spring slip in the z-axis direction
Property, but it is not limited to this.For example, contact probe head 30 can be stacking probe, line probe etc..In addition, contact probe head 30 also may be used
To be cantilevered.
In addition, in embodiment 1 and 2, the surface 2A of maintaining part 2 is formed as tabular surface, but is not limited to this.
For example, the surface 2A of maintaining part 2 can be formed as pears surface.If formation said structure, quasiconductor can be suppressed to serve as a contrast
The stickup of the surface 2A of bottom 100 and maintaining part 2.And, in this case, surface 2A is difficult to the effect as reflecting surface,
But due to the step between the top 21 of groove portion 20 and bottom 22 can be detected, therefore, using the boundary portion on top 21 and bottom 22
(the periphery side end on top 21) and the distance of reference position 2C and the testing result being obtained by test section 3 of each groove portion 20,
Can be with the set location of the Semiconductor substrate 100 on the surface 2A of high precision test maintaining part 2.
In addition, in embodiment 1 and 2, multiple groove portion 20 being formed radially along maintaining part 2, but it is not limited to this.Example
As with reference to Fig. 9, groove portion 20 can be along the circumference formation of Semiconductor substrate 100.In the semiconductor device involved by embodiment 2
Evaluating apparatus in it is also possible to be formed with groove portion 20 in the way of the side 25 along top bar 23.Even if formation said structure,
Can obtain and the same effect of embodiment 1 and 2.
In addition, in embodiment 1 and 2, multiple groove portions 20 can be covered by protecting film.In this case, protecting film
The light that test section 3 to be set to is used can pass through.For example, the material constituting protecting film is more than or equal to for transmitance
60% material, is zinc oxide etc..
Here, enumerating the feature structure of the present invention, it includes the part repeating with an above-mentioned embodiment part.
In the evaluation methodology of semiconductor device involved in the present invention, to formation partly leading on a semiconductor substrate 100
The evaluating apparatus of the semiconductor device that body device is electrically evaluated, have：Maintaining part 2, Semiconductor substrate 100 is maintained at by it
On the 2A of surface；And test section 3, it detects to the concavo-convex of surface 2A of maintaining part 2.Maintaining part 2 comprises on the 2A of surface
Multiple groove portions 20, multiple groove portions 20 are formed as, when being maintained at Semiconductor substrate 100 on the 2A of surface, with Semiconductor substrate 100
Periphery overlap, and, a part compared with the periphery of Semiconductor substrate 100 positioned at outside.
Accordingly, for the peripheral end 110 of Semiconductor substrate 100, the area inside the periphery positioned at Semiconductor substrate 100
Domain and be located at Semiconductor substrate 100 periphery outside region between, can increase compared with the situation not having groove portion 20 with inspection
The difference (difference of height) of survey portion 3 distance.Therefore, with the situation that groove portion 20 is not formed on the surface 2A of maintaining part 2
Compare, it is possible to increase the accuracy of detection peripheral end 110 of Semiconductor substrate 100 being detected using test section 3.Its knot
Really, it is possible to increase probe matrix 10 is with respect to the aligning accuracy of Semiconductor substrate 100.
Above-mentioned groove portion 20 can be formed as, when being maintained at Semiconductor substrate 100 on the 2A of surface, from Semiconductor substrate
100 central side extends to outer peripheral side.
Thus, in the center of Semiconductor substrate 100, the position deviation of the reference position with respect to maintaining part 2 can be by
In the case of allowing, even if it is also possible to be carried out half-and-half with high accuracy using test section 3 in the state of creating this position deviation
The detection of the peripheral end 110 of conductor substrate 100, it is possible to increase probe matrix 10 is with respect to the para-position essence of Semiconductor substrate 100
Degree.
Above-mentioned groove portion 20 can be formed as, when being maintained at Semiconductor substrate 100 on the 2A of surface, in Semiconductor substrate
100 week upwardly extends.
Thereby, it is possible to during by being detected to the peripheral end 110 of Semiconductor substrate 100 with high accuracy using test section 3
Detection place, be arranged in the arbitrary region on the periphery of Semiconductor substrate 100.
When being maintained at Semiconductor substrate 100 on the 2A of surface, above-mentioned groove portion 20 can be in the radial direction of Semiconductor substrate 100
On, formed multiple in various location.
Thus, even if in the case that the Semiconductor substrate 100 that external diameter is different is maintained at the surface 2A of maintaining part 2,
Can use and be overlapped with the periphery with Semiconductor substrate 100, and, a part is located at compared with the periphery of Semiconductor substrate 100
The groove portion 20 that the mode in outside is formed, carries out the detection of the peripheral end 110 to Semiconductor substrate 100 with high accuracy.
The bottom surface 20A of above-mentioned surface 2A and groove portion 20 can abreast be arranged.
If formation said structure, angle and test section 3 and bottom surface 20A that test section 3 formed can be made with surface 2A
The angle being formed is roughly the same.For example, in test section 3 be optical profile type range sensor in the case of, can make surface 2A and
Bottom surface 20A forms roughly the same angle with respect to the optical axis of the light being irradiated by test section 3.As a result, can be with from detection
The light that portion 3 is irradiated and reflected using surface 2A or bottom surface 20A can reach the mode of test section 3 effectively, constitutes test section
3.Further, since from above-mentioned surface 2A, the depth to the 20A of bottom surface is formed as fixed value, therefore, it is possible to respect to existing
Maintaining part 2 and be readily formed groove portion 20.
From depth to the 20A of bottom surface for the above-mentioned surface 2A, when Semiconductor substrate 100 is maintained on the 2A of surface,
Compared with the periphery of Semiconductor substrate 100 in the region in outside, in central side and the Semiconductor substrate of Semiconductor substrate 100
100 outer circumferential side can be different.
If formation said structure, even if the end of the outer circumferential side in the groove portion 20 (groove portion 20 of the outer circumferential side of maintaining part 2
End) place, it is also possible to high precision test in the case of there is defect or indentation equivalent damage or being attached with foreign body etc.
The position of peripheral end 110.Specifically, when being maintained at Semiconductor substrate 100 on the 2A of surface, in groove portion 20 with partly lead
The periphery of body substrate 100 is compared in the region in outside, is formed with the stage portion different from the end of outer circumferential side.That is, in groove
It is formed with top 21 and bottom 22 in portion 20.Thus, even if the end of outer circumferential side has the feelings of defect equivalent damage in groove portion 20
Condition or in the case that this end is attached with foreign body etc., by will be arranged on inner side and and Semiconductor substrate compared with this end
The stage portion being exposed to outside is compared in 100 periphery, as top 21 and bottom 22 and the distance of test section 3 difference (height
Difference) and detected such that it is able to be entered to the distance of this stage portion and the peripheral end 110 of Semiconductor substrate 100 with high accuracy
Row detection.
It is also possible that above-mentioned test section 3 is the range sensor of optical profile type, groove portion 20 has reflecting surface in bottom surface 20A.
Thereby, it is possible to the most of light irradiating to the bottom surface 20A of groove portion 20 from test section 3 are reflected.As a result, energy
Enough amounts increasing from bottom surface 20A (reflecting surface) to the reflected light reaching test section 3, it is possible to increase outer to Semiconductor substrate 100
The accuracy of detection of peripheral end portion 110.
Above-mentioned reflecting surface can also carry out mirror finish.If adopting this structure, can be with respect to maintaining part 2
After defining groove portion 20, by mirror finish is carried out to the bottom surface 20A of groove portion 20, thus forming reflecting surface.Therefore, it is possible to low
Cost forms reflecting surface.
Above-mentioned reflecting surface can be formed by metal film.So it is also possible to will shine from test section 3 to the bottom surface 20A of groove portion 20
The most of light penetrated are reflected.As a result, can increase from bottom surface 20A (reflecting surface) to the reflected light reaching test section 3
Amount, it is possible to increase the accuracy of detection to the peripheral end 110 of Semiconductor substrate 100.
Above-mentioned reflecting surface can also be by gold-plated formation.So it is also possible to by from test section 3 to the bottom surface 20A of groove portion 20
The most of light irradiating are reflected.As a result, can increase from bottom surface 20A (reflecting surface) to the reflected light reaching test section 3
Amount, it is possible to increase the accuracy of detection to the peripheral end 110 of Semiconductor substrate 100.
The surface 2A of above-mentioned maintaining part 2 can also be formed as pears surface.If formed as pears surface, inciting somebody to action
The stickup of surface 2A and Semiconductor substrate 100 when Semiconductor substrate 100 is maintained on the surface 2A of maintaining part 2, can be suppressed.
Can also also have：Determination part (contact probe head 30), its welding disk with above-mentioned semiconductor device is (for example, in Fig. 2
Electrode pad 101) electrical connection；And determination part matrix (probe matrix 10), it keeps determination part (contact probe head 30), detection
Portion 3 is arranged on determination part matrix (probe matrix 10).
If formation said structure, can be by evaluating apparatus 1 miniaturization of semiconductor device.
Above-mentioned groove portion 20 can also be covered by protecting film.If covered, it is prevented from the inside of groove portion 20 by protecting film
Attachment foreign body or dirt, or the end generation defect equivalent damage of the outer circumferential side of groove portion 20.
It is also possible that above-mentioned maintaining part 2, on the 2A of surface, has recess, groove portion in the outer circumferential side of Semiconductor substrate 100
20 are formed in recess.
I.e. it is also possible on the surface 2A of maintaining part 2, being provided with top bar 23 in the central side of Semiconductor substrate and leave office
Rank 24, wherein, the outer circumferential side of this top bar 23 of 24 encirclements of getting out of a predicament or an embarrassing situation.If formation said structure, even if being formed for having
Quasiconductor in the thinner wall section 130 of central side and the heavy section 140 being formed at outer circumferential side in the way of surrounding this thinner wall section 130
Substrate 100 it is also possible to carry out the detection to peripheral end 110 with high accuracy.
Embodiments of the present invention are illustrated, it is believed that embodiment of disclosure is only at whole aspects
Illustrate, rather than restricted content.The scope of the present invention is illustrated by claims, comprises the content equal with claim
And the whole changes in scope.
Claims (13)
1. a kind of evaluating apparatus of semiconductor device, it is electrically commented to the semiconductor device being formed on a semiconductor substrate
Valency,
The evaluating apparatus of this semiconductor device have：
Maintaining part, Semiconductor substrate is kept from the teeth outwards by it；And
Test section, it detects to the concavo-convex of described surface of described maintaining part,
Described maintaining part comprises multiple groove portions on said surface,
Multiple described groove portions are formed as, when keeping on said surface described Semiconductor substrate, with described Semiconductor substrate
Periphery overlap, and, positioned at outside compared with the periphery of a part of and described Semiconductor substrate,
In described groove portion compared with the periphery of described Semiconductor substrate in the region in outside, be formed with described groove portion in
Outer circumferential side the different stage portion in end,
The depth to the bottom surface of described groove portion from described surface, described Semiconductor substrate is being kept on said surface
When, compared with the periphery of described Semiconductor substrate in the region in outside, in central side and the institute of described Semiconductor substrate
The outer circumferential side stating Semiconductor substrate is different.
2. the evaluating apparatus of semiconductor device according to claim 1, wherein,
Described groove portion is formed as, when keeping on said surface described Semiconductor substrate, from described Semiconductor substrate
The lateral outer circumferential side of the heart extends.
3. the evaluating apparatus of semiconductor device according to claim 1, wherein,
Described groove portion is formed as, when keeping on said surface described Semiconductor substrate, in the week of described Semiconductor substrate
Upwardly extend.
4. the evaluating apparatus of semiconductor device according to claim 1, wherein,
By described Semiconductor substrate keep on said surface when, described groove portion in described Semiconductor substrate radially not
Multiple with being formed at position.
5. the evaluating apparatus of the semiconductor device according to any one of Claims 1 to 4, wherein,
The bottom surface of described surface and described groove portion is abreast arranged.
6. the evaluating apparatus of semiconductor device according to claim 5, wherein,
Described test section is the range sensor of optical profile type, and described groove portion has reflecting surface in described bottom surface.
7. the evaluating apparatus of semiconductor device according to claim 6, wherein,
Mirror finish has been carried out to described reflecting surface.
8. the evaluating apparatus of semiconductor device according to claim 6, wherein,
Described reflecting surface is formed by metal film.
9. the evaluating apparatus of semiconductor device according to claim 8, wherein,
Described reflecting surface is by gold-plated formation.
10. the evaluating apparatus of semiconductor device according to claim 1, wherein,
The described surface of described maintaining part is formed as pears surface.
The evaluating apparatus of 11. semiconductor devices according to claim 1, wherein,
The evaluating apparatus of this semiconductor device also have：
Determination part, it is electrically connected with the welding disk of described semiconductor device；And
Determination part matrix, it keeps described determination part,
Described test section is arranged on described determination part matrix.
The evaluating apparatus of 12. semiconductor devices according to claim 1, wherein,
Described groove portion is covered by protecting film.
The evaluating apparatus of 13. semiconductor devices according to claim 1, wherein,
Described maintaining part on said surface, has recess in the outer circumferential side of described Semiconductor substrate, and described groove portion is formed at institute
State in recess.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-107123 | 2013-05-21 | ||
| JP2013107123A JP5885701B2 (en) | 2013-05-21 | 2013-05-21 | Semiconductor device evaluation equipment |
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| Publication Number | Publication Date |
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| CN104183516A CN104183516A (en) | 2014-12-03 |
| CN104183516B true CN104183516B (en) | 2017-03-01 |
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| US (1) | US9551745B2 (en) |
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| US10168380B2 (en) * | 2015-01-23 | 2019-01-01 | Mitsubishi Electric Corporation | Semiconductor device evaluation jig, semiconductor device evaluation apparatus, and semiconductor device evaluation method |
| CN110832633B (en) * | 2017-06-30 | 2023-06-02 | 东芝三菱电机产业系统株式会社 | Substrate positioning device and substrate positioning method |
| JP6788630B2 (en) * | 2018-05-31 | 2020-11-25 | 株式会社ヨコオ | Semiconductor inspection equipment with antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5624943A (en) * | 1979-08-08 | 1981-03-10 | Mitsubishi Electric Corp | Semiconductor device |
| JPH0630370B2 (en) * | 1987-08-27 | 1994-04-20 | 東京エレクトロン株式会社 | Probe device |
| JPH06162987A (en) * | 1992-11-18 | 1994-06-10 | Hitachi Ltd | Sample processing device |
| JP2876507B2 (en) * | 1993-04-14 | 1999-03-31 | 日立電子エンジニアリング株式会社 | Wafer foreign matter inspection device |
| JPH10144748A (en) * | 1996-11-12 | 1998-05-29 | Shimadzu Corp | Wafer stage |
| US6025730A (en) * | 1997-03-17 | 2000-02-15 | Micron Technology, Inc. | Direct connect interconnect for testing semiconductor dice and wafers |
| JP4592885B2 (en) * | 2000-07-31 | 2010-12-08 | 富士通セミコンダクター株式会社 | Semiconductor substrate testing equipment |
| JP2002280287A (en) * | 2001-03-19 | 2002-09-27 | Nikon Corp | Method and device for detecting position, method and device for exposure, and method of manufacturing device |
| JP2004128273A (en) * | 2002-10-03 | 2004-04-22 | Sharp Corp | Light emitting element |
| JP4744178B2 (en) * | 2005-04-08 | 2011-08-10 | シャープ株式会社 | Light emitting diode |
| JP2006339189A (en) * | 2005-05-31 | 2006-12-14 | Oki Electric Ind Co Ltd | Semiconductor wafer and semiconductor device using the same |
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| US9551745B2 (en) | 2017-01-24 |
| JP2014229696A (en) | 2014-12-08 |
| CN104183516A (en) | 2014-12-03 |
| JP5885701B2 (en) | 2016-03-15 |
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