CN104177616A - Moisture-proof organic silicon material for LED encapsulation - Google Patents
Moisture-proof organic silicon material for LED encapsulation Download PDFInfo
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- CN104177616A CN104177616A CN201410395400.7A CN201410395400A CN104177616A CN 104177616 A CN104177616 A CN 104177616A CN 201410395400 A CN201410395400 A CN 201410395400A CN 104177616 A CN104177616 A CN 104177616A
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Abstract
The invention discloses a moisture-proof organic silicon material for LED (Light Emitting Diode) encapsulation. The moisture-proof organic silicon material comprises the following components in parts by weight: 20-30 parts of propyl triethoxysilane, 20-30 parts of diphenyl dichlorosilane, 3-6 parts of methylhexahydrophthalic anhydride, 5-10 parts of zinc acetylacetonate, 0.5-5 parts of tetrabutylammonium bromide, 0.5-3 parts of benzyl triphenyl phosphorus bromide, 0.5-2.5 parts of diphenyl silanediol, 0.5-1.5 parts of lithium naphthenate and 10-15 parts of waterproof agents, wherein the waterproof agent is one or more than one of siloxane, alkyl silane, amino siloxane, epoxy siloxane, acryloyl siloxane and methylacryloyl siloxane. The moisture-proof organic silicon material for LED encapsulation, which is disclosed by the invention, keeps high light transmittance and good high-temperature resistant property of an organic silicon material; due to addition of the water-proofing agent, the moisture absorption resistance of the encapsulating material is effectively enhanced, so that the encapsulating material can be used outdoors for a long time without causing serious light attenuation due to moisture absorption.
Description
Technical field
The present invention relates to LED encapsulation technology field, relate in particular to a kind of LED encapsulation moisture-proof organosilicon material.
Background technology
Under the background of global energy shortage, the white light LEDs with advantages such as energy-efficient, environmental protections gets most of the attention under the prospect of illumination market.In recent years, along with the continuous breakthrough of the technology such as White-light LED chip making, fluorescent material preparation and device heat radiation, white light LEDs luminous efficiency, brightness and power all have increased significantly.LED encapsulation refers to the encapsulation of luminescence chip, and comparing integrated antenna package has relatively big difference, and the encapsulation of LED not only requirement can be protected wick, but also can printing opacity, so the encapsulation of LED has special requirement to packaged material.The specific refractory power of current LED packaged material and ageing-resistant ability are not also fine, and after solidifying, internal stress is large, poor impact resistance, and use temperature can not be too high, otherwise packaged material transparency can reduce, and causes LED brightness deterioration.And during for open air, long-term moisture absorption meeting causes the variation of packaged material, as surface atomizing, chip, embroider erosion etc., therefore, the resistance to water soak of LED packaged material is also very important.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, the LED encapsulation that a kind of shock-resistance is good, resistance to water soak is good moisture-proof organosilicon material is provided.
The present invention adopts following technical scheme to achieve these goals:
A moisture-proof organosilicon material is used in LED encapsulation, comprises that the component of following weight part forms: propyl-triethoxysilicane 20-30 part, diphenyl dichlorosilane 20-30 part, methyl hexahydrophthalic anhydride 3-6 part, zinc acetylacetonate 5-10 part, Tetrabutyl amonium bromide 0.5-5 part, benzyl tri-phenyl-phosphorus bromide 0.5-3 part, Diphenylsilanediol 0.5-2.5 part, naphthenic acid lithium 0.5-1.5 part, water-resisting agent 10-15 part;
Described water-resisting agent is selected from one or more in siloxanes, alkyl silane, amido siloxanes, epoxy group(ing) siloxanes, acryl siloxanes, methacryloyl radical siloxane.
Preferably, moisture-proof organosilicon material is used in described LED encapsulation, it is characterized in that: the component that comprises following weight part forms: 25 parts of propyl-triethoxysilicanes, 25 parts of diphenyl dichlorosilanes, 5 parts of methyl hexahydrophthalic anhydrides, 7 parts of zinc acetylacetonates, 2.5 parts of Tetrabutyl amonium bromides, 1.5 parts of benzyl tri-phenyl-phosphorus bromides, 1.5 parts of Diphenylsilanediols, 1 part of naphthenic acid lithium, 12 parts of water-resisting agents;
Described water-resisting agent is selected from one or more in siloxanes, alkyl silane, amido siloxanes, epoxy group(ing) siloxanes, acryl siloxanes, methacryloyl radical siloxane.
The preparation method of moisture-proof organosilicon material for described LED encapsulation, comprises following preparation process: after proportionally each component being mixed, be heated to 80-100 ℃, then through room temperature vacuum defoamation 30 minutes, curing temperature is sulfidization molding at 100-120 ℃.
Compared with the prior art, beneficial effect of the present invention is as follows:
LED encapsulation moisture-proof organosilicon material of the present invention, when keeping organosilicon material high transmission rate and good resistance to elevated temperatures, add water-resisting agent, effectively improved the resistance to water soak of packaged material, can be for a long time for open air, and there will not be moisture absorption to cause serious light decay.
Embodiment
Below in conjunction with embodiment, the present invention is further illustrated, but the present invention is not limited only to these embodiment, do not departing under the prerequisite of aim of the present invention, within any improvement of doing all drops on protection scope of the present invention.
Embodiment 1:
A moisture-proof organosilicon material is used in LED encapsulation, comprises that the component of following weight part forms: 25 parts of propyl-triethoxysilicanes, 25 parts of diphenyl dichlorosilanes, 5 parts of methyl hexahydrophthalic anhydrides, 7 parts of zinc acetylacetonates, 2.5 parts of Tetrabutyl amonium bromides, 1.5 parts of benzyl tri-phenyl-phosphorus bromides, 1.5 parts of Diphenylsilanediols, 1 part of naphthenic acid lithium, 6 parts of siloxanes, 3 parts of alkyl silanes, 1 part of amido siloxanes;
Preparation method: after proportionally each component being mixed, be heated to 100 ℃, then through room temperature vacuum defoamation 30 minutes, curing temperature is sulfidization molding at 120 ℃.
Embodiment 2:
A moisture-proof organosilicon material is used in LED encapsulation, comprises that the component of following weight part forms: 20 parts of propyl-triethoxysilicanes, 30 parts of diphenyl dichlorosilanes, 3 parts of methyl hexahydrophthalic anhydrides, 10 parts of zinc acetylacetonates, 0.5 part of Tetrabutyl amonium bromide, 3 parts of benzyl tri-phenyl-phosphorus bromides, 0.5 part of Diphenylsilanediol, 1.5 parts of naphthenic acid lithiums, 4 parts of alkyl silanes, amido siloxanes, 5 parts of epoxy group(ing) siloxanes, 3 parts of acryl siloxanes;
Preparation method: after proportionally each component being mixed, be heated to 80 ℃, then through room temperature vacuum defoamation 30 minutes, curing temperature is sulfidization molding at 100 ℃.
Embodiment 3:
A moisture-proof organosilicon material is used in LED encapsulation, comprises that the component of following weight part forms: 30 parts of propyl-triethoxysilicanes, 25 parts of diphenyl dichlorosilanes, 5 parts of methyl hexahydrophthalic anhydrides, 8 parts of zinc acetylacetonates, 3 parts of Tetrabutyl amonium bromides, 2 parts of benzyl tri-phenyl-phosphorus bromides, 2 parts of Diphenylsilanediols, 1 part of naphthenic acid lithium, 7 parts of siloxanes, 3 parts of epoxy group(ing) siloxanes, 5 parts of methacryloyl radical siloxanes.
Preparation method: after proportionally each component being mixed, be heated to 100 ℃, then through room temperature vacuum defoamation 30 minutes, curing temperature is sulfidization molding at 110 ℃.
Test example:
Respectively by the LED packaged material of embodiment 1, embodiment 2, embodiment 3 and the traditional filling one-tenth of LED packaged material 5mm lamp, at the beginning of 130 ℃, bake 1 hour, after 150 ℃, bake 5 hours, then lamp finished product is placed in autoclave, pressure-controlling is at 2atm, 130 ℃ of temperature, test 48 hours, utilize LED luminance test machine to record light decay data, light decay=(rear optical throughput-initial luminous flux)/initial luminous flux, test result is as following table:
| ? | Light decay per-cent |
| Embodiment 1 | -1.58％ |
| Embodiment 2 | -1.95％ |
| Embodiment 3 | -2.02％ |
| Traditional LED packaged material | -36.58％ |
Claims (3)
1. a moisture-proof organosilicon material is used in LED encapsulation, it is characterized in that: the component that comprises following weight part forms: propyl-triethoxysilicane 20-30 part, diphenyl dichlorosilane 20-30 part, methyl hexahydrophthalic anhydride 3-6 part, zinc acetylacetonate 5-10 part, Tetrabutyl amonium bromide 0.5-5 part, benzyl tri-phenyl-phosphorus bromide 0.5-3 part, Diphenylsilanediol 0.5-2.5 part, naphthenic acid lithium 0.5-1.5 part, water-resisting agent 10-15 part;
Described water-resisting agent is selected from one or more in siloxanes, alkyl silane, amido siloxanes, epoxy group(ing) siloxanes, acryl siloxanes, methacryloyl radical siloxane.
2. moisture-proof organosilicon material is used in LED encapsulation according to claim 1, it is characterized in that: the component that comprises following weight part forms: 25 parts of propyl-triethoxysilicanes, 25 parts of diphenyl dichlorosilanes, 5 parts of methyl hexahydrophthalic anhydrides, 7 parts of zinc acetylacetonates, 2.5 parts of Tetrabutyl amonium bromides, 1.5 parts of benzyl tri-phenyl-phosphorus bromides, 1.5 parts of Diphenylsilanediols, 1 part of naphthenic acid lithium, 12 parts of water-resisting agents;
Described water-resisting agent is selected from one or more in siloxanes, alkyl silane, amido siloxanes, epoxy group(ing) siloxanes, acryl siloxanes, methacryloyl radical siloxane.
3. LED according to claim 1 and 2 encapsulates the preparation method with moisture-proof organosilicon material, it is characterized in that: comprise following preparation process: after proportionally each component being mixed, be heated to 80-100 ℃, then through room temperature vacuum defoamation 30 minutes, curing temperature was sulfidization molding at 100-120 ℃.
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| CN201410395400.7A CN104177616A (en) | 2014-08-12 | 2014-08-12 | Moisture-proof organic silicon material for LED encapsulation |
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| CN201410395400.7A CN104177616A (en) | 2014-08-12 | 2014-08-12 | Moisture-proof organic silicon material for LED encapsulation |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102504270A (en) * | 2011-10-28 | 2012-06-20 | 中科院广州化学有限公司 | High-performance organic silicon electronic pouring sealant and preparation method and application thereof |
| CN102863801A (en) * | 2012-10-25 | 2013-01-09 | 上纬（上海）精细化工有限公司 | High-hardness high-adhesion silicone resin composition |
| CN102993753A (en) * | 2012-11-23 | 2013-03-27 | 中科院广州化学有限公司 | Composite hybrid organic silicon LED (Light Emitting Diode) packaging material, preparation method and applications thereof |
| CN102863799B (en) * | 2012-10-17 | 2014-02-26 | 东莞市贝特利新材料有限公司 | High-refractive-index organosilicon material for light-emitting diode (LED) packaging and preparation method of high-refractive-index organosilicon material |
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2014
- 2014-08-12 CN CN201410395400.7A patent/CN104177616A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102504270A (en) * | 2011-10-28 | 2012-06-20 | 中科院广州化学有限公司 | High-performance organic silicon electronic pouring sealant and preparation method and application thereof |
| CN102863799B (en) * | 2012-10-17 | 2014-02-26 | 东莞市贝特利新材料有限公司 | High-refractive-index organosilicon material for light-emitting diode (LED) packaging and preparation method of high-refractive-index organosilicon material |
| CN102863801A (en) * | 2012-10-25 | 2013-01-09 | 上纬（上海）精细化工有限公司 | High-hardness high-adhesion silicone resin composition |
| CN102993753A (en) * | 2012-11-23 | 2013-03-27 | 中科院广州化学有限公司 | Composite hybrid organic silicon LED (Light Emitting Diode) packaging material, preparation method and applications thereof |
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Application publication date: 20141203 |