CN104167400B - Packaging part with four sides having no pins and packaging technology and manufacturing technology of packaging part - Google Patents

Packaging part with four sides having no pins and packaging technology and manufacturing technology of packaging part Download PDF

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Publication number
CN104167400B
CN104167400B CN201410281990.0A CN201410281990A CN104167400B CN 104167400 B CN104167400 B CN 104167400B CN 201410281990 A CN201410281990 A CN 201410281990A CN 104167400 B CN104167400 B CN 104167400B
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pin
copper
substrate matrix
matrix
layers
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CN104167400A (en
Inventor
郭桂冠
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Riyuexin semiconductor (Suzhou) Co.,Ltd.
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SUZHOU RIYUEXIN SEMICONDUCTOR CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

The invention discloses a packaging part with four sides having no pins, and packaging technology and manufacturing technology of the packaging part. The packaging part with four sides having no pins includes a substrate matrix, a plurality of pins are buried inside the substrate matrix and protrude out of the substrate matrix, an IC chip and a plurality of lead contact pieces are arranged on the substrate matrix, and the end of the substrate matrix, where each pin protrudes, is provided with a solder mask; a solder mask is arranged between the IC chip and the substrate matrix, and the IC chip and the plurality of lead contact pieces are connected through bonding wires; the IC chip, the ends of the pins where solder masks are arranged, the lead contact pieces, and the bonding wires are all packaged in a plastic packaging body; and the other end of each pin is electroplated with a nickel-plated layer or a nickel ball or a gold-plated layer or a gold ball. Through the abovementioned method, according to the packaging technology and the manufacturing technology, production efficiency can be improved, two editions of products can be machined by one time, and innovative etching technology can prevent damage and oxidization of the four sides having no pins, thereby greatly prolonging service lives of the products.

Description

A kind of four limit pin-less packaging parts and packaging technology, manufacture craft
Technical field
The present invention relates to the manufacture field without pin package, be specifically related to the packaging technology of a kind of four limits without pin package.
Background technology
QFN is a kind of without pin package, and in square or rectangle, package bottom middle position has a large area exposed pads to be used for heat conduction, and the encapsulation periphery around large bonding pad has the conductive welding disk realizing electrical connection.Because QFN encapsulation has gull wing lead-in wire unlike traditional SOIC and TSOP encapsulates, the conductive path between inner pin and pad is short, and in coefficient of self-inductance and packaging body, routing resistance is very low, so it can provide the electrical property of brilliance.In addition, it also provides outstanding heat dispersion by the leadframe pad exposed, and this pad has direct heat dissipation channel, for discharging the heat in encapsulation.Usually heat dissipation bonding pad is directly welded on circuit boards, and the dissipating vias in PCB contributes to unnecessary power consumption to be diffused in copper ground plate, thus absorb unnecessary heat.
Packaging technology without pin package has multiple, after aQFN framework employing half-etching (half etching) technique, its framework front arranges many regularly arranged cylindric copper bumps, and (end face radius is at about 0.230mm, height 0.08mm), and the aQFN framework back side is a monoblock copper alloy layer, in the completed after Duan Feng Installed, utilization is acid or the copper alloy pin of alkaline solution to the product back side carries out selective etch.MIS technology adopts the two-sided etching of QFN, but brushes plastic packaging material (compound) overleaf in advance, then Jin Hang Feng Installed technique.MIS technique carries out metal plating and the etching of the interior pin of lead frame, outer pin and connecting line on metal base, then carries out the pre-encapsulating of plastic packaging material, makes the unlike material such as metal, plastic packaging material incorporate one.
But above-mentioned packaging technology is all operate piecewise; process velocity is slower; and above-mentioned method for packing is owing to being first encapsulate substantially; and then carry out the coating process of pin; then in encapsulation process; pin is easily impaired or be oxidized, thus impacts subsequent production and use, and namely not only production efficiency is low but also can not well tamper seal piece installing for existing packaging technology.
Summary of the invention
, without the packaging technology of pin package, can enhance productivity in four limits that the object of the present invention is to provide, disposable processing two editions products, and the etch process of innovation can avoid four limits to be undermined oxidation without pin, greatly improves product useful life.
For achieving the above object, technical scheme disclosed by the invention is: a kind of four limit pin-less packaging parts, comprise substrate matrix, be embedded in substrate matrix in multiple pin and protrude from described substrate matrix, substrate matrix is provided with IC chip, multiple wire contact, and one end that each pin protrudes from described substrate matrix is provided with solder mask; Be provided with solder mask between described IC chip and described substrate matrix, be connected by bonding line between described IC chip with multiple wire contact; Described IC chip, pin are provided with one end of solder mask, wire contact, bonding line are all packaged in plastic-sealed body; The other end of described each pin is all electroplate with nickel coating or nickel ball or Gold plated Layer or gold goal.
Preferably, the thickness of described nickel coating is 0.1mm-0.3mm.
The invention discloses a kind of packaging technology of four limit pin-less packaging parts, get four limit leaderless chip carrier structures to be packaged, described four limit leaderless chip carrier structures comprise substrate matrix, be embedded in substrate matrix in multiple pin and protrude from described substrate matrix, substrate matrix is provided with IC chip, multiple wire contact, and one end that each pin protrudes from described substrate matrix is provided with solder mask; Be provided with solder mask between described IC chip and described substrate matrix, be connected by bonding line between described IC chip with multiple wire contact; Described IC chip, pin are provided with one end of solder mask, wire contact, bonding line are all packaged in plastic-sealed body; Described plastic-sealed body is positioned at the side of described substrate matrix, and the opposite side of described substrate matrix is closed with layers of copper; Layers of copper on described substrate matrix etched completely, the pin that script is closed by layers of copper is exposed, and exposed pin does electroplating processes.
Preferably, described electroplating processes refers to and to power on tin coating or tin ball or layer gold or gold goal at exposed pin.
In described packaging technology, preferably, utilize containing sulfuric acid, H 2o 2mixed solution the layers of copper on substrate matrix is etched completely.Described when layers of copper on substrate matrix is etched completely, be adopt containing H2SO4, H 2o 2, Cu 2+mixed solution etch, wherein, in mixed solution, the content range of H2SO4 is 75g/L-125g/L, H 2o 2content range be 155g/L-205g/L, Cu 2+content range be 10g/L-75g/L.Preferably, H in mixed solution 2sO 4content range be 80g/L-120g/L, H 2o 2content range be 160g/L-200g/L, Cu 2+content range be 15g/L-70g/L.
The invention also discloses a kind of manufacture craft of four limit pin-less packaging parts, comprise the steps:
Step a, making substrate matrix: get a support plate, in the two sides of support plate difference pressing layers of copper, all etch thinning by layers of copper, difference electro-coppering post in the layers of copper on support plate two sides; After the plating of copper post terminates, the equal lamination matrix in the both sides of support plate, the outside metal cladding of matrix, the copper post on support plate two sides is all packaged in corresponding matrix;
Step b, making pin: on the matrix on support plate two sides, open copper window and boring respectively, the copper window offered and boring are electroplated, form pin; Open the matrix after copper window and laser drilling and form substrate matrix;
Step c, make wire contact: the metal level of the outside plating of matrix forms wire contact opening in copper window and laser drilling process;
Steps d, solder mask is set: on pin, arrange solder mask, pin package is in solder mask; Described solder mask uses solder mask; In electroplating surface nickel dam or the layer gold of wire contact;
Step e, IC chip is set: remove support plate, then support plate both sides form the semi-finished product of one or four limit pin-less packaging parts respectively, and each half-finished layers of copper is etched away certain thickness; Each semi-finished product are pasted and solidification IC chip, utilize bonding line to be connected with corresponding wire contact by IC chip; Preferably, each half-finished layers of copper is etched away 1um-5um;
Step f, plastic packaging: by the semi-finished product lamination plastic-sealed body in above-mentioned steps e, make IC chip, one end that pin is provided with solder mask, wire contact, bonding line be all packaged in plastic-sealed body;
Step g, etching pin and plating: plastic-sealed body is positioned at the side of described substrate matrix, the opposite side of described substrate matrix is the layers of copper in step e after etching; Layers of copper is etched completely, makes pin exposed, exposed pin does electroplating processes.
Preferably, in above-mentioned steps a, support plate two sides is the two-layer layers of copper of pressing respectively, and wherein, the thickness of ground floor layers of copper is between 10-12um, and the thickness of second layer layers of copper is between 1-5um, and preferably, the thickness of second layer layers of copper is between 1-3um.
The manufacture craft of four described limit pin-less packaging parts, preferably, described electroplating processes refers to electroplates pure stannum layer or pure tin ball on exposed pin.
The manufacture craft of four described limit pin-less packaging parts, preferably, in step a, support plate is that PP material is made.
The manufacture craft of four described limit pin-less packaging parts, preferably, in described step a, the matrix of support plate both sides lamination adopts polypropylene material or glass fiber material to make.
The manufacture craft of four described limit pin-less packaging parts, preferably, in described step a, layers of copper all etch thinning after thickness be 10-14um.
Invention utilizes individual layer to make the wiring layer of QFN without plastic cement base version (being the base material 1 in the accompanying drawing) System of fiber glass cores layer, and inlet wire carries out the encapsulation of IC chip.In packaging technology of the present invention and manufacture craft, after plastic packaging material encapsulating completes, carry out the etching of product back copper foil again and the outer pin etching of the copper material of product is exposed, finally carrying out the Pure Tin Plating Process of copper pin, because Cu is oxidizable in atmosphere, affect the reliability of pin, the zinc-plated Cu that both avoided is oxidized, and possesses again conduction heat transfer effect, can also strengthen the ability that product is combined with pcb board, namely tin electrodeposited coating enhances the ability of surface patch, can avoid the generation of verdigris.
Manufacture craft of the present invention is compared with existing manufacture craft, owing to being that once property processes two editions products on a support plate, effectively can improving speed of production, and do coating process at the outer surface of pin, what avoid copper pin is undermined the situations such as oxidation, improves product useful life.
The invention has the beneficial effects as follows: method for packing and the manufacture craft of the present invention four limit pin-less packaging part can be enhanced productivity, disposable processing two editions products, and the etch process of innovation can avoid four limits to be undermined oxidation without pin, greatly improve product useful life.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention four limit pin-less packaging part one preferred embodiment;
Fig. 2 to Figure 13 is the fabrication processing schematic diagram of the present invention four limit pin-less packaging part.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Please refer to accompanying drawing 1 to accompanying drawing 13, the embodiment of the present invention comprises:
embodiment 1:please refer to accompanying drawing 1, a kind of four limit pin-less packaging parts, comprise substrate matrix 1, are embedded in substrate matrix 1 and protrude from substrate matrix 1 in multiple pin 2, substrate matrix 1 is provided with IC chip 4, multiple wire contact 6, and one end that each pin 2 protrudes from substrate matrix 1 is provided with solder mask 3; Be provided with between IC chip 4 and substrate matrix 1 between solder mask 3, IC chip 4 with multiple wire contact 6 and be connected by bonding line 5; IC chip 4, pin 2 are provided with one end of solder mask 3, wire contact 6, bonding line 5 are all packaged in plastic-sealed body 7; The other end of each pin 2 is all electroplate with nickel plating ball 20.
embodiment 2:please refer to accompanying drawing 13, a kind of four limit pin-less packaging parts, comprise substrate matrix 1, are embedded in substrate matrix 1 and protrude from substrate matrix 1 in multiple pin, substrate matrix 1 is provided with IC chip 4, multiple wire contact 6, and one end that each pin 2 protrudes from substrate matrix 1 is provided with solder mask 3; Be provided with between IC chip 4 and substrate matrix 1 between solder mask 3, IC chip 4 with multiple wire contact 6 and be connected by bonding line 5; IC chip 4, pin 2 are provided with one end of solder mask 3, wire contact 6, bonding line 5 are all packaged in plastic-sealed body 7; The other end of each pin 2 is all electroplate with nickel coating 20.
The thickness of nickel coating 20 can between 0.1mm-0.3mm; In the present embodiment, the thickness of nickel coating 20 is 0.1mm.
embodiment 3:the difference of the present embodiment and embodiment 2 is, in the present embodiment, the thickness of nickel coating is 0.2mm.
embodiment 4:the difference of the present embodiment and embodiment 2 is, in the present embodiment, the other end of each pin 2 is all electroplate with Gold plated Layer 20.The thickness of Gold plated Layer 20 can between 0.1mm-0.3mm.
embodiment 5:the difference of the present embodiment and embodiment 2 is, in the present embodiment, the other end of each pin 2 is all electroplate with nickel coating, is electroplate with Gold plated Layer again at the outer surface of nickel coating; Nickel coating and Gold plated Layer form the coating 20 on pin 2 surface jointly.The thickness of coating 20 can between 0.1mm-0.3mm.
embodiment 6:please refer to accompanying drawing 11 and accompanying drawing 13, a kind of packaging technology of four limit pin-less packaging parts, get four limit leaderless chip carrier structures to be packaged, described four limit leaderless chip carrier structures comprise substrate matrix 1, be embedded in substrate matrix 1 in multiple pin 2 and protrude from substrate matrix 1, substrate matrix 1 is provided with IC chip 4, multiple wire contact 6, and one end that each pin 2 protrudes from substrate matrix 1 is provided with solder mask 3; Be provided with between IC chip 4 and substrate matrix 1 between solder mask 3, IC chip 4 with multiple wire contact 6 and be connected by bonding line 5; IC chip 4, pin 2 are provided with one end of solder mask 3, wire contact 6, bonding line 5 are all packaged in plastic-sealed body 7; Plastic-sealed body 7 is positioned at the side of substrate matrix 1, and the opposite side of substrate matrix 1 is closed with layers of copper 81 '; Layers of copper 81 ' on substrate matrix 1 etched completely, script is exposed by the one end of the pin 2 that layers of copper 81 ' is closed, and exposed pin 2 does electroplating processes, forms coating 20.
Described electroplating processes refers to power in one end of exposed pin 2 tin coating or tin ball or layer gold or gold goal.
In the present embodiment, be utilize the mixed solution containing sulfuric acid, H2O2 the layers of copper 81 ' on substrate matrix 1 to be etched completely during etched copper 81 '.
embodiment 7:please refer to accompanying drawing 11 and accompanying drawing 13, a kind of packaging technology of four limit pin-less packaging parts, get four limit leaderless chip carrier structures to be packaged, described four limit leaderless chip carrier structures comprise substrate matrix 1, be embedded in substrate matrix 1 in multiple pin 2 and protrude from substrate matrix 1, substrate matrix 1 is provided with IC chip 4, multiple wire contact 6, and one end that each pin 2 protrudes from substrate matrix 1 is provided with solder mask 3; Be provided with between IC chip 4 and substrate matrix 1 between solder mask 3, IC chip 4 with multiple wire contact 6 and be connected by bonding line 5; IC chip 4, pin 2 are provided with one end of solder mask 3, wire contact 6, bonding line 5 are all packaged in plastic-sealed body 7; Plastic-sealed body 7 is positioned at the side of substrate matrix 1, and the opposite side of substrate matrix 1 is closed with layers of copper 81 '; Layers of copper 81 ' on substrate matrix 1 etched completely, script is exposed by the one end of the pin 2 that layers of copper 81 ' is closed, and exposed pin 2 does electroplating processes, forms coating 20.
Described electroplating processes refers to the tin coating that to power in one end of exposed pin 2, and the thickness of tin layers is between 0.1mm-0.3mm, and the thickness of tin layers can be 0.1mm, 0.2mm, 0.3mm.
In the present embodiment, be utilize containing H during etched copper 81 ' 2sO 4, H 2o 2, Cu 2+mixed solution the layers of copper 81 ' on substrate matrix 1 is etched completely.Wherein, H in mixed solution 2sO 4content range be 75g/L-125g/L, H 2o 2content range be 155g/L-205g/L, Cu 2+content range be 10g/L-75g/L.
embodiment 7:difference in the present embodiment and above-described embodiment is, described electroplating processes refers to the tin coating that to power in one end of exposed pin 2, and the thickness of tin layers is 0.3mm.
In the present embodiment, be utilize containing H during etched copper 81 ' 2sO 4, H 2o 2, Cu 2+mixed solution the layers of copper 81 ' on substrate matrix 1 is etched completely.Wherein, H in mixed solution 2sO 4content range be 80g/L-120g/L, H 2o 2content range be 160g/L-200g/L, Cu 2+content range be 15g/L-70g/L.
embodiment 8:difference in the present embodiment and above-described embodiment is, described electroplating processes refers to tin-ball electroplating on one end of exposed pin 2, and the thickness that tin ball protrudes from substrate matrix 1 is 0.25mm.
In the present embodiment, be utilize containing H during etched copper 81 ' 2sO 4, H 2o 2, Cu 2+mixed solution the layers of copper 81 ' on substrate matrix 1 is etched completely.Wherein, H in mixed solution 2sO 4content be 100g/L, H 2o 2content range be 180g/L, Cu 2+content range be 65g/L.
embodiment 9:please refer to accompanying drawing 2 to accompanying drawing 13, the invention also discloses a kind of manufacture craft of four limit pin-less packaging parts, comprise the steps:
Step a, please refer to accompanying drawing 2, accompanying drawing 3 and accompanying drawing 4, make substrate matrix: get a support plate 10, the pressing layers of copper 8 respectively on the two sides of support plate 10, in the present embodiment, support plate 10 two sides is the two-layer layers of copper of pressing respectively, is layers of copper 80 and layers of copper 81 respectively.The layers of copper 81 on support plate 10 two sides is all etched thinning, then difference electro-coppering post 9 in the layers of copper 8 on support plate 10 two sides; After copper post 9 plating terminates, the equal lamination matrix 1 ' in the both sides of support plate 10, the outside metal cladding 6 ' of matrix 1 ', the copper post 9 on support plate 10 two sides is all packaged in corresponding matrix 1 '; Preferably, in step a described in the present embodiment, the layers of copper 8 on support plate 10 two sides all etch thinning after gross thickness be 15um, wherein the thickness of layers of copper 81 is 12um, and the thickness of layers of copper 80 is 3um.
Step b, making pin: please refer to accompanying drawing 5 and accompanying drawing 6, the matrix 1 ' on support plate 10 two sides opens copper window and boring respectively, the copper window offered and boring are electroplated, form pin 2; Open the matrix 1 ' after copper window and laser drilling and form substrate matrix 1.
Step c, make wire contact: outer metal layers 6 ' forms wire contact 6 opening in copper window and laser drilling process;
Steps d, solder mask is set: please refer to accompanying drawing 7 and accompanying drawing 8, on pin 2 lamination solder mask 3, pin 2 is packaged in solder mask 3; Solder mask 3 uses commodity to be called the solder mask of PSR4000 AUS308; At the electroplating surface metal layer 60 of wire contact 6, metal level 60 can be nickel dam also can be layer gold, also can in the surface of wire contact 6 successively electroless nickel layer and layer gold.
Step e, IC chip is set: please refer to accompanying drawing 9 and accompanying drawing 10, remove support plate 10, then support plate 10 both sides form the semi-finished product of one or four limit pin-less packaging parts respectively, and each half-finished layers of copper 8 is etched away certain thickness, layers of copper 80 etched away completely, layers of copper 81 etching becomes layers of copper 81 '; Each semi-finished product are pasted and solidification IC chip 4, utilize bonding line 5 to be connected with corresponding wire contact 6 by IC chip 4;
Step f, plastic packaging: please refer to accompanying drawing 11, by the semi-finished product lamination plastic-sealed body 7 in above-mentioned steps e, make IC chip 4, one end that pin 2 is provided with solder mask 3, wire contact 6, bonding line 5 be all packaged in plastic-sealed body 7;
Step g, etching pin and plating: plastic-sealed body 7 is positioned at the side of substrate matrix 1, the opposite side of substrate matrix 1 is the layers of copper 81 ' in step e after etching; Layers of copper 81 ' etched completely, one end that pin 2 is closed by layers of copper 81 ' is originally exposed, and exposed pin 2 does electroplating processes; Described electroplating processes refers to electroplates pure stannum layer or pure tin ball on exposed pin 2.
In the present embodiment, in above-mentioned steps a, support plate 10 is that PP material is made.
In the present embodiment, in above-mentioned steps a, the matrix 1 ' of support plate 10 both sides lamination is the glass fiber material adopting commodity to be called GHPL-830NX.
embodiment 10:the difference of the present embodiment and embodiment 7 is, in the present embodiment, solder mask 3 uses commodity to be called the solder mask of AUS320.
embodiment 11:the difference of the present embodiment and embodiment 7 is, in the present embodiment, the matrix 1 ' of support plate 10 both sides lamination adopts polypropylene material.
embodiment 12:the difference of the present embodiment and embodiment 7 is, in the present embodiment, each half-finished layers of copper 80 etched away completely in step e, layers of copper 81 etches away 3um becomes layers of copper 81 '.
embodiment 13:the difference of the present embodiment and embodiment 7 is, in the present embodiment, each half-finished layers of copper 80 etched away completely in step e, layers of copper 81 etches away 7um becomes layers of copper 81 '.
embodiment 14:in another embodiment, the layers of copper 8 on support plate 10 two sides etch thinning after thickness can be 10um, 11um, 12um, 13um, 14um.
embodiment 15:in another embodiment, support plate 10 is that the glass fiber material adopting commodity to be called GHPL-830NX is made.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.

Claims (8)

1. the packaging technology of a limit pin-less packaging part, it is characterized in that, get four limit leaderless chip carrier structures to be packaged, described four limit leaderless chip carrier structures comprise substrate matrix, be embedded in substrate matrix in multiple pin and protrude from described substrate matrix, substrate matrix is provided with IC chip, multiple wire contact, and one end that each pin protrudes from described substrate matrix is provided with solder mask; Be provided with solder mask between described IC chip and described substrate matrix, be connected by bonding line between described IC chip with multiple wire contact; Described IC chip, pin are provided with one end of solder mask, wire contact, bonding line are all packaged in plastic-sealed body; Described plastic-sealed body is positioned at the side of described substrate matrix, and the opposite side of described substrate matrix is closed with layers of copper; Layers of copper on described substrate matrix etched completely, the pin that script is closed by layers of copper is exposed, and exposed pin does electroplating processes.
2. packaging technology according to claim 1, is characterized in that, described electroplating processes refers to and to power on tin coating or tin ball or layer gold or gold goal at exposed pin.
3. packaging technology according to claim 2, is characterized in that, utilizes the mixed solution containing sulfuric acid, H2O2 the layers of copper on substrate matrix to be etched completely.
4. a manufacture craft for four limit pin-less packaging parts, is characterized in that, comprise the steps:
Step a, making substrate matrix: get a support plate, in the two sides of support plate difference pressing layers of copper, all etch thinning by layers of copper, difference electro-coppering post in the layers of copper on support plate two sides; After the plating of copper post terminates, the equal lamination matrix in the both sides of support plate, the outside metal cladding of matrix, the copper post on support plate two sides is all packaged in corresponding matrix;
Step b, making pin: on the matrix on support plate two sides, open copper window and boring respectively, the copper window offered and boring are electroplated, form pin; Open the matrix after copper window and laser drilling and form substrate matrix;
Step c, make wire contact: the metal level of the outside plating of matrix forms wire contact opening in copper window and laser drilling process; Steps d, solder mask is set: on pin, arrange solder mask, pin package is in solder mask; Described solder mask uses solder mask; In electroplating surface nickel dam or the layer gold of wire contact;
Step e, IC chip is set: remove support plate, then support plate both sides form the semi-finished product of one or four limit pin-less packaging parts respectively, and each half-finished layers of copper is etched away certain thickness; Each semi-finished product are pasted and solidification IC chip, utilize bonding line to be connected with corresponding wire contact by IC chip;
Step f, plastic packaging: by the semi-finished product lamination plastic-sealed body in above-mentioned steps e, make IC chip, one end that pin is provided with solder mask, wire contact, bonding line be all packaged in plastic-sealed body;
Step g, etching pin and plating: plastic-sealed body is positioned at the side of substrate matrix, the opposite side of described substrate matrix is the layers of copper in step e after etching; Layers of copper is etched completely, makes pin exposed, exposed pin does electroplating processes.
5. the manufacture craft of four limit pin-less packaging parts according to claim 4, is characterized in that, described electroplating processes refers to electroplates pure stannum layer or pure tin ball on exposed pin.
6. the manufacture craft of four limit pin-less packaging parts according to claim 5, is characterized in that, in step a, support plate is that PP material is made.
7. the manufacture craft of four limit pin-less packaging parts according to claim 6, is characterized in that, in described step a, the matrix of support plate both sides lamination adopts polypropylene material or glass fiber material to make.
8. the manufacture craft of four limit pin-less packaging parts according to claim 7, is characterized in that, in described step a, layers of copper all etch thinning after thickness be 10-14um.
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CN109243983B (en) * 2018-08-31 2020-10-30 苏州日月新半导体有限公司 Method for preparing integrated circuit package, integrated circuit substrate and preparation method thereof
US11373936B2 (en) 2019-11-14 2022-06-28 Rohde & Schwarz Gmbh & Co. Kg Flat no-leads package, packaged electronic component, printed circuit board and measurement device

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