CN104157761A - 一种提高光取出率的氮化镓基发光二极管结构及制备方法 - Google Patents
一种提高光取出率的氮化镓基发光二极管结构及制备方法 Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Description
结构 | 载流子浓度 | 迁移率 |
P-DaN | 1.99×1017/cm-3 | 10.15cm2/Vs |
N-InGaN | 2.28×1019/cm-3 | 245.5cm2/Vs |
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Cited By (9)
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CN105304774A (zh) * | 2015-11-03 | 2016-02-03 | 湘能华磊光电股份有限公司 | 一种led外延层生长方法 |
CN105405934A (zh) * | 2015-11-03 | 2016-03-16 | 湘能华磊光电股份有限公司 | 一种提高led外延晶体质量的外延生长方法 |
CN105977355A (zh) * | 2016-05-09 | 2016-09-28 | 华灿光电股份有限公司 | 一种发光二极管外延片及其制备方法 |
CN104638082B (zh) * | 2015-02-04 | 2017-10-13 | 映瑞光电科技(上海)有限公司 | 低电压GaN 基LED 外延结构的制作方法 |
CN107546306A (zh) * | 2016-06-29 | 2018-01-05 | 晶能光电(江西)有限公司 | 一种具有高复合效率的量子阱结构及外延结构 |
CN109037401A (zh) * | 2018-06-21 | 2018-12-18 | 中国工程物理研究院电子工程研究所 | 一种氮化镓基水平纳米柱壳核结构阵列led的制备方法 |
CN110034213A (zh) * | 2019-03-27 | 2019-07-19 | 太原理工大学 | 一种高性能GaN基发光二极管结构及其制备方法 |
CN112563376A (zh) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | 一种二极管外延结构 |
CN114497307A (zh) * | 2022-04-19 | 2022-05-13 | 徐州立羽高科技有限责任公司 | 一种基于氮化铝镓材料的发光二极管外延结构及其制造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080308832A1 (en) * | 2007-06-14 | 2008-12-18 | Epistar Corporation | Light-emitting device |
CN102842661A (zh) * | 2012-09-12 | 2012-12-26 | 合肥彩虹蓝光科技有限公司 | 氮化镓基发光二极管外延生长方法 |
CN102867892A (zh) * | 2012-09-06 | 2013-01-09 | 合肥彩虹蓝光科技有限公司 | 具有In掺杂的低温生长P型GaN外延方法 |
CN103077964A (zh) * | 2013-01-18 | 2013-05-01 | 中国科学院半导体研究所 | 改进p-GaN薄膜欧姆接触的材料结构及其制备方法 |
CN203013782U (zh) * | 2012-09-17 | 2013-06-19 | 惠州比亚迪实业有限公司 | 一种led芯片 |
CN103500780A (zh) * | 2013-09-29 | 2014-01-08 | 山西飞虹微纳米光电科技有限公司 | 一种氮化镓基led外延结构及其制备方法 |
CN103682010A (zh) * | 2012-09-17 | 2014-03-26 | 比亚迪股份有限公司 | 一种led芯片及制备方法 |
CN103700745A (zh) * | 2014-01-03 | 2014-04-02 | 合肥彩虹蓝光科技有限公司 | 一种高亮度氮化镓基发光二极管外延生长方法 |
CN103746052A (zh) * | 2013-12-27 | 2014-04-23 | 太原理工大学 | 一种InGaN基多量子阱结构及其制备方法 |
CN103915532A (zh) * | 2014-04-11 | 2014-07-09 | 西安神光皓瑞光电科技有限公司 | 一种紫外led外延结构生长方法 |
-
2014
- 2014-08-30 CN CN201410436399.8A patent/CN104157761B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080308832A1 (en) * | 2007-06-14 | 2008-12-18 | Epistar Corporation | Light-emitting device |
CN102867892A (zh) * | 2012-09-06 | 2013-01-09 | 合肥彩虹蓝光科技有限公司 | 具有In掺杂的低温生长P型GaN外延方法 |
CN102842661A (zh) * | 2012-09-12 | 2012-12-26 | 合肥彩虹蓝光科技有限公司 | 氮化镓基发光二极管外延生长方法 |
CN203013782U (zh) * | 2012-09-17 | 2013-06-19 | 惠州比亚迪实业有限公司 | 一种led芯片 |
CN103682010A (zh) * | 2012-09-17 | 2014-03-26 | 比亚迪股份有限公司 | 一种led芯片及制备方法 |
CN103077964A (zh) * | 2013-01-18 | 2013-05-01 | 中国科学院半导体研究所 | 改进p-GaN薄膜欧姆接触的材料结构及其制备方法 |
CN103500780A (zh) * | 2013-09-29 | 2014-01-08 | 山西飞虹微纳米光电科技有限公司 | 一种氮化镓基led外延结构及其制备方法 |
CN103746052A (zh) * | 2013-12-27 | 2014-04-23 | 太原理工大学 | 一种InGaN基多量子阱结构及其制备方法 |
CN103700745A (zh) * | 2014-01-03 | 2014-04-02 | 合肥彩虹蓝光科技有限公司 | 一种高亮度氮化镓基发光二极管外延生长方法 |
CN103915532A (zh) * | 2014-04-11 | 2014-07-09 | 西安神光皓瑞光电科技有限公司 | 一种紫外led外延结构生长方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104638082B (zh) * | 2015-02-04 | 2017-10-13 | 映瑞光电科技(上海)有限公司 | 低电压GaN 基LED 外延结构的制作方法 |
CN105304774A (zh) * | 2015-11-03 | 2016-02-03 | 湘能华磊光电股份有限公司 | 一种led外延层生长方法 |
CN105405934A (zh) * | 2015-11-03 | 2016-03-16 | 湘能华磊光电股份有限公司 | 一种提高led外延晶体质量的外延生长方法 |
CN105405934B (zh) * | 2015-11-03 | 2017-11-17 | 湘能华磊光电股份有限公司 | 一种提高led外延晶体质量的外延生长方法 |
CN105304774B (zh) * | 2015-11-03 | 2017-12-29 | 湘能华磊光电股份有限公司 | 一种led外延层生长方法 |
CN105977355A (zh) * | 2016-05-09 | 2016-09-28 | 华灿光电股份有限公司 | 一种发光二极管外延片及其制备方法 |
CN107546306A (zh) * | 2016-06-29 | 2018-01-05 | 晶能光电(江西)有限公司 | 一种具有高复合效率的量子阱结构及外延结构 |
CN109037401A (zh) * | 2018-06-21 | 2018-12-18 | 中国工程物理研究院电子工程研究所 | 一种氮化镓基水平纳米柱壳核结构阵列led的制备方法 |
CN110034213A (zh) * | 2019-03-27 | 2019-07-19 | 太原理工大学 | 一种高性能GaN基发光二极管结构及其制备方法 |
CN110034213B (zh) * | 2019-03-27 | 2024-01-23 | 太原理工大学 | 一种高性能GaN基发光二极管结构及其制备方法 |
CN112563376A (zh) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | 一种二极管外延结构 |
CN114497307A (zh) * | 2022-04-19 | 2022-05-13 | 徐州立羽高科技有限责任公司 | 一种基于氮化铝镓材料的发光二极管外延结构及其制造方法 |
CN114497307B (zh) * | 2022-04-19 | 2022-08-02 | 徐州立羽高科技有限责任公司 | 一种基于氮化铝镓材料的发光二极管外延结构及其制造方法 |
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