CN104157730A - 一种单晶硅衬底锗外延薄膜的制备方法 - Google Patents

一种单晶硅衬底锗外延薄膜的制备方法 Download PDF

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CN104157730A
CN104157730A CN201410352977.XA CN201410352977A CN104157730A CN 104157730 A CN104157730 A CN 104157730A CN 201410352977 A CN201410352977 A CN 201410352977A CN 104157730 A CN104157730 A CN 104157730A
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thin film
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monocrystalline silicon
graphite
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陈诺夫
牟潇野
杨博
辛雅焜
吴强
弭辙
付蕊
刘虎
仲琳
白一鸣
高征
刘海
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North China Electric Power University
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Abstract

本发明提供一种单晶硅衬底锗外延薄膜的制备方法，所述方法包括如下步骤：(1)以单晶硅片为衬底；(2)在单晶硅片衬底抛光面上利用磁控溅射方法沉积一层石墨过渡层，石墨过渡层厚度为20-100nm；(3)在石墨过渡层上利用化学气相沉积的方法制备锗薄膜，厚度为20-100μm。本发明的方法将石墨作为硅和锗之间的过渡层，不仅可以消除硅和锗之间的晶格失配，还可以减小由于热膨胀系数不匹配造成的锗薄膜质量的下降，降低锗薄膜的缺陷密度。本发明的方法利用磁控溅射方法、化学气相沉积法制备出锗薄膜，用于后续多节叠层电池的制作，大幅度的降低多节太阳能电池的生产成本，提高太阳能电池的效率。

Description

一种单晶硅衬底锗外延薄膜的制备方法
技术领域
本发明属于锗外延薄膜制备技术领域，具体涉及一种利用磁控溅射方法和化学气相沉积方法在单晶硅衬底上制备锗薄膜的方法。
背景技术
近年来，在高效叠层太阳电池的研制中，由元素周期表中III族元素与V族元素组成的III-V族太阳能电池得到了极大的青睐。其中，在锗单晶衬底上生长的三结太阳电池Ge\GaInAs\GaInP具有最高的光电转换效率，在标准太阳光强(AM1.5)下其转换效率已达到35％，在聚光条件下其转换效率已超过42％(AM1.5，454倍聚光)。但是由于锗是典型的烯散金属，全世界可供开采的锗资源比较匮乏，价格昂贵，因此三结太阳电池的应用受到限制。
硅在地壳中储量丰富，其各项性能研究与生产技术已非常成熟，广泛应用于太阳电池领域和微电子领域。因此，为了降低多结高效太阳电池的成本和解决锗材料匮乏的问题，可以在单晶硅衬底上外延锗薄膜，再制备出Si\Ge\GaInAs\GaInP多节太阳能电池，这样既能减小锗原料的使用量，又能降低太阳电池的成本。然而，由于硅和锗的晶格常数不同，直接在硅上外延锗会出现较多的晶体缺陷，因此很难生长出锗外延层。
石墨材料具有低成本、热膨胀系数与硅相近、耐高温、同时可用作掺杂元素及电极材料等优点。因此，将石墨作为硅和锗之间的过渡层，即在单晶硅衬底上先沉积一层石墨薄膜后再外延锗薄膜，不仅可以消除硅和锗之间的晶格失配，还可以减小由于热膨胀系数不匹配造成的锗薄膜质量的下降，降低锗薄膜的缺陷密度。
发明内容
本发明的目的在于提供一种在单晶硅衬底上沉积制备锗薄膜的方法。
为实现本发明的目的，技术方案如下：
一种单晶硅衬底锗外延薄膜的制备方法，包括如下步骤：
(1)以单晶硅片为衬底；
(2)在单晶硅片衬底抛光面上沉积一层石墨过渡层；
(3)在石墨过渡层上利用化学气相沉积的方法制备锗薄膜。
所述单晶硅衬底为单面抛光或双面抛光的开盒即用型单晶硅片，厚度为160-400μm。
步骤(2)中采用磁控溅射的方法在单晶硅衬底上沉积石墨过渡层，沉积温度为300-800℃。
所述石墨过渡层厚度为20-100nm。
步骤(3)中采用化学气相沉积的方法制备锗薄膜，沉积温度为1000-1200℃。
锗薄膜厚度为20-100μm。
本发明的方法将石墨作为硅和锗之间的过渡层，由于石墨是单分子层结构，在单晶硅衬底上生长一层石墨过渡层对锗薄膜的生长有一定的外延诱导作用，因此生长出的锗薄膜表面更加平整，表面粗糙度大大降低。过渡层的存在有效的遏制了单晶硅衬底和锗薄膜之间的晶格失配，位错密度大大降低，而且由于石墨过渡层极薄，锗薄膜也只有20-100μm，有利于与其他光电器件集成。整个制备过程工艺简单，可以减少太阳电池制备的时间，节约能耗，降低成本，提高太阳电池的整体效率。
附图说明
图1为在单晶硅片衬底上制备锗薄膜的过程示意图。
图2为锗薄膜AFM扫描图。
图3为锗薄膜AFM三维显示图。
具体实施方式
为了进一步说明本发明的技术方案，以下结合附图和具体实例对本发明作进一步的说明。
本发明一种以单晶硅为衬底沉积制备锗外延薄膜的方法和技术。本发明利用磁控溅射方法在单晶硅衬底上，沉积石墨过渡层，再利用化学气相沉积方法在石墨过渡层上沉积一定厚度的锗薄膜，制备出以石墨为过渡层的单晶硅衬底锗薄膜。
如图1所示，一种单晶硅衬底锗外延薄膜的制备方法，包括如下步骤：
步骤1：以单晶硅片为衬底，硅片单面抛光或双面抛光；
步骤2：在单晶硅片衬底抛光面上利用磁控溅射方法沉积一层石墨过渡层，石墨过渡层厚度为20-100nm；
步骤3：在石墨过渡层上利用化学气相沉积的方法制备锗薄膜，厚度为20-100μm。
实现发明的最好方式
1、实现发明的主要设备：磁控溅射设备和化学气相沉积设备。
2、根据制备工艺，并根据生长设备的个体情况进行适当调整，如单晶硅片的选择，源的纯度，沉积薄膜的温度、时间、功率、气体流量等。工艺参数、薄膜厚度等。
实施例1
步骤1：以单晶硅片为衬底，硅片单面抛光或双面抛光；
步骤2：在单晶硅片衬底抛光面上利用磁控溅射方法沉积一层石墨过渡层，石墨过渡层厚度为50nm；
步骤3：在石墨过渡层上利用化学气相沉积的方法制备锗薄膜，厚度为80μm。
原子力显微镜分析(如图2-3所示)表明，在高温条件下，在石墨过渡层上生长锗薄膜时，成膜粒子在石墨表面迁移率较大，易于形成表面光滑平整的锗薄膜，表面粗糙度仅为0.638nm。Sq(Root Mean Square)为表面形貌相对于基准面的均方根粗糙度。
X射线衍射数据分析表明，薄膜样品展现了非常明显的锗薄膜衍射峰，且其半高宽非常小，呈现高度的择优取向。说明锗薄膜已经晶华，大大有利于后续多节电池在其上的合成。
实施例2
步骤1：以单晶硅片为衬底，硅片单面抛光或双面抛光；
步骤2：在单晶硅片衬底抛光面上利用磁控溅射方法沉积一层石墨过渡层，石墨过渡层厚度为70nm；
步骤3：在石墨过渡层上利用化学气相沉积的方法制备锗薄膜，厚度为100μm。

Claims (6)

1.一种单晶硅衬底锗外延薄膜的制备方法，其特征在于，包括如下步骤：
(1)以单晶硅片为衬底；
(2)在单晶硅片衬底抛光面上沉积一层石墨过渡层；
(3)在石墨过渡层上利用化学气相沉积的方法制备锗薄膜。
2.根据权利要求1所述的制备方法，其特征在于，所述单晶硅衬底为单面抛光或双面抛光的开盒即用型单晶硅片，厚度为160-400μm。
3.根据权利要求1所述的制备方法，其特征在于，步骤(2)中采用磁控溅射的方法在单晶硅衬底上沉积石墨过渡层，沉积温度为300-800℃。
4.根据权利要求1所述的制备方法，其特征在于，所述石墨过渡层厚度为20-100nm。
5.根据权利要求1所述的制备方法，其特征在于，步骤(3)中采用化学气相沉积的方法制备锗薄膜，沉积温度为1000-1200℃。
6.根据权利要求1所述的制备方法，其特征在于，锗薄膜厚度为20-100μm。
CN201410352977.XA 2014-07-23 2014-07-23 一种单晶硅衬底锗外延薄膜的制备方法 Pending CN104157730A (zh)

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CN113823555A (zh) * 2021-09-03 2021-12-21 合肥安德科铭半导体科技有限公司 一种在绝缘体上制备锗薄膜的方法
WO2022222450A1 (zh) * 2021-04-21 2022-10-27 浙江水利水电学院 一种fbar谐振器及其制备方法与应用

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022222450A1 (zh) * 2021-04-21 2022-10-27 浙江水利水电学院 一种fbar谐振器及其制备方法与应用
CN113823555A (zh) * 2021-09-03 2021-12-21 合肥安德科铭半导体科技有限公司 一种在绝缘体上制备锗薄膜的方法
CN113823555B (zh) * 2021-09-03 2024-06-07 合肥安德科铭半导体科技有限公司 一种在绝缘体上制备锗薄膜的方法

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