CN104124135A - 一种激光退火方法 - Google Patents
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Abstract
本发明公开了一种激光退火方法,使用一激光退火装置对一基板上的半导体结构表面进行扫描,所述激光退火装置包括激光源和光学器具,包括:所述激光源提供一激光束;所述激光束投射在一镜面上,行进路线改变90°后通过所述光学器具进行会聚;使用该激光束对所述基板进行扫描;所述激光束以脉冲序列组的方式产生,所述脉冲序列组包括M组脉冲序列,每一组所述脉冲序列包括N个脉冲,其中,M和N为大于1的自然数。本发明可以减少非晶硅氧化可能,改善硅基片电性,并且由于进行激光退火的机台不再需要设置内部腔体,可以减少机台重量,机台保养上也变得较为容易。
Description
技术领域
本发明涉及激光退火技术,尤其涉及一种利用激光对非晶硅进行退火以改善由非晶硅转化后得到的多晶硅电性的激光退火方法。
背景技术
现有非晶硅转换成多晶硅,一般是使用高温炉退火或是使用准分子激光系统退火,加热时间过长导致硅膜氧化,且必需使用非常大的腔体内部充满氮气,比如美国专利US6027960(Laser annealingmethod and laser annealing device)中是以波长为308nm的准分子激光照射于非晶硅上面,如图1所示,基板表面的非晶硅经历回火过程后成为多晶硅,其中基板需要置放在一个腔体101中的机台上,同时通过气体管道给腔体101内部充满氮气,以减少基板表面非晶硅区域在回火过程中与氧接触。由于使用到的机台腔体101具有一定的体积,另外还需要布设气体管道,使得机台占用工作地较大,机台又比较重,保养成本比较高。
发明内容
针对上述存在的问题,本发明的目的是提供一种激光退火方法,省去了腔体这一结构同时确保非晶硅在退火过程中减少硅膜氧化可能,从而达到改善硅基片电性的目的,减少机台重量,使得机台保养上较为容易。
本发明的目的是通过下述技术方案实现的:
一种激光退火方法,使用一激光退火装置对一基板上的半导体结构表面进行扫描,所述激光退火装置包括激光源和光学器具,其中,所述激光退火方法包括:
所述激光源提供一激光束;
所述激光束投射在一镜面上,行进路线改变90°后通过所述光学器具进行会聚;
使用该激光束对所述基板表面的非晶硅区域进行快速扫描;
其中,所述激光束以脉冲序列组的方式产生,所述脉冲序列组包括M组脉冲序列,每一组所述脉冲序列包括N个脉冲,其中,M和N均为大于1的自然数。
上述的激光退火方法,其中,各个所述脉冲序列之间的间隔时间为20ms。
上述的激光退火方法,其中,所述脉冲序列的持续时间小于50ns。
上述的激光退火方法,其中,所述脉冲的脉冲宽度小于10ps。
上述的激光退火方法,其中,所述激光束的波长为523nm或527nm或532nm。
上述的激光退火方法,其中,所述光学器具为单块凸透镜或多块凸透镜组合排列而成。
上述的激光退火方法,其中,所述激光源采用超快激光器。
上述的激光退火方法,其中,所述超快激光器采用声光Q开关,电光Q开关,锁模技术及MOPA脉冲序列组控制。
与已有技术相比,本发明的有益效果在于:
减少非晶硅氧化可能,改善硅基片电性,并且由于进行激光退火的机台不再需要设置内部腔体,可以减少机台重量,机台保养上也变得较为容易。
附图说明
图1示出了现有技术激光退火方法的设备装置结构示意图;
图2示出了本发明激光退火方法的流程示意框图;
图3示出了本发明激光退火方法的激光退火装置的结构示意图;
图4示出了本发明激光退火方法的激光束脉冲序列示意图。
具体实施方式
下面结合原理图和具体操作实施例对本发明作进一步说明。
在本发明激光退火方法的优选实施例中,使用一激光退火装置对一基板1上的半导体结构表面进行扫描,如图3所示,激光退火装置包括激光源2和光学器具3,激光退火装置可以置放于机台上,机台不设置内部腔体。
参看图2所示,本激光退火步骤包括:
激光源2提供一激光束0,在本发明的优选实施方案中,激光束0的波长为532nm的超短波激光,也可以是527nm或者523nm等其他波长的超短波激光。
激光束0投射在一镜面4上,镜面4为表面平整的反光镜,镜面4位于激光束的行进路线上且与水平面呈45度夹角,激光束0因为在镜面4上产生反射后的行进路线改变90°,之后通过光学器具3进行会聚。在本发明的优选实施例中,光学器具3为光学器具为单块凸透镜或多块凸透镜组合排列而成,凸透镜的相关器材容易从市面上获得,便于本发明的实现。
最后使用该激光束0对基板1的表面的非晶硅区域11进行快速扫描,尤其地,激光束0以脉冲序列组(pulse train)的方式产生,脉冲序列组的时间频度示意如图4所示,图中,横轴表示时间,纵轴表示激光源发射脉冲的能量大小。
需要指出的是,本实施例中的脉冲序列组包括M组脉冲序列5,虚线框内为一组脉冲序列5,每一组脉冲序列5包括N个脉冲,其中,M和N均为大于1的自然数,N的数值将基于脉冲序列5的长度和脉冲的宽度决定。
在本发明优选实施例中,各个脉冲序列5之间的间隔时间为20ms,脉冲序列5的持续时间小于50ns,每一个脉冲的脉冲宽度小于10ps。由于脉冲以一个非常密集的速度产生,并且各个脉冲的宽度也很小,如此使得从脉冲发射至晶体表面的时间缩短至很有限的区间内,大大降低了非晶硅表面在退火过程中暴露在空气中的时间,即降低了非晶硅表面分子与氧气的接触时间,因此,整个过程虽然不是在密闭腔体内通过通入惰性气体以与氧气隔绝,但也从一定程度上等同于与氧气隔绝,使得硅膜被氧化的概率能够降到最低。
需要指出的是,脉冲序列5的脉冲宽度和发射间隙均可通过调节激光源的相应参数来设置,对发射该脉冲序列5的激光源结构却并无影响。
在本发明的优选实施例中,激光源2采用超快激光器,超快激光器采用声光Q开关,电光Q开关,锁模技术及MOPA脉冲序列组控制,其能量范围优选为100mJ/cm2至500mJ/cm2,能量范围可以根据实际需要调整。以上当然可以选取其他类型的激光器,并不仅仅局限于上述具体类型。
另外,在激光退火过程中还要对基片0底部进行加热,加热温度为100℃至700℃,该温度范围保证了基片1表层的非晶硅分子在激光源2的激光序列扫描下能最大限度地转化为多晶硅分子。
综上,本发明可以减少非晶硅转化为多晶硅时被氧化的可能性,较大程度地改善了硅基片电性,并且由于进行激光退火的机台不再需要设置内部腔体,可以减少机台重量,机台保养上也变得较为容易。
以上对本发明的具体实施例进行了详细描述,但本发明并不限制于以上描述的具体实施例,其只是作为范例。对于本领域技术人员而言,任何等同修改和替代也都在本发明的范畴之中。因此,在不脱离本发明的精神和范围下所作出的均等变换和修改,都应涵盖在本发明的范围内。
Claims (8)
1.一种激光退火方法,使用一激光退火装置对一基板上的半导体结构表面进行扫描,所述激光退火装置包括激光源和光学器具,其特征在于,所述激光退火方法包括:
所述激光源(2)提供一激光束(0);
所述激光束投射在一镜面(4)上,行进路线改变90°后通过所述光学器具(3)进行会聚;
使用该激光束(0)对所述基板(1)表面的非晶硅区域(11)进行快速扫描;
其中,所述激光束(0)以脉冲序列组的方式产生,所述脉冲序列组包括M组脉冲序列,每一组所述脉冲序列包括N个脉冲,其中,M和N均为大于1的自然数。
2.如权利要求1所述的激光退火方法,其特征在于,各个所述脉冲序列之间的间隔时间为20ms。
3.如权利要求2所述的激光退火方法,其特征在于,所述脉冲序列的持续时间小于50ns。
4.如权利要求2所述的激光退火方法,其特征在于,所述脉冲的脉冲宽度小于10ps。
5.如权利要求3或4所述的激光退火方法,其特征在于,所述激光束(0)的波长为523nm或527nm或532nm。
6.如权利要求5所述的激光退火方法,其特征在于,所述光学器具为单块凸透镜或多块凸透镜组合排列而成。
7.如权利要求6所述的激光退火方法,其特征在于,所述激光源采用超快激光器。
8.如权利要求7所述的激光退火方法,其特征在于,所述超快激光器采用声光Q开关,电光Q开关,锁模技术及MOPA脉冲序列组控制。
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US14/092,713 US20140322925A1 (en) | 2013-04-26 | 2013-11-27 | Method of laser annealing process |
TW103101685A TW201440937A (zh) | 2013-04-26 | 2014-01-16 | 一種雷射退火方法 |
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