CN104124134B - Etching method of composite membrane - Google Patents
Etching method of composite membrane Download PDFInfo
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- CN104124134B CN104124134B CN201310149253.0A CN201310149253A CN104124134B CN 104124134 B CN104124134 B CN 104124134B CN 201310149253 A CN201310149253 A CN 201310149253A CN 104124134 B CN104124134 B CN 104124134B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Abstract
The invention discloses an etching method of a composite membrane, comprising the following steps: a device with a composite membrane deposited thereon is provided, wherein the composite membrane is formed by successively stacking a first polycrystalline silicon layer, a silicon dioxide layer and a second polycrystalline silicon layer and the second polycrystalline silicon layer is directly contacted with the device; surface pretreatment is carried out on the first polycrystalline silicon layer; the first polycrystalline silicon layer is coated with a photoresist, and then the first polycrystalline silicon layer undergoes main etching, and finally the polycrystalline silicon layer undergoes over etching; the silicon dioxide layer undergoes main etching, then the silicon dioxide layer undergoes over etching; and the second polycrystalline silicon layer undergoes main etching, and then the second polycrystalline silicon layer undergoes over etching. According to the etching method of the composite membrane, the first polycrystalline silicon layer, the silicon dioxide layer and the second polycrystalline silicon layer successively undergo etching. Etching is carried out for three times after photoetching is carried out for one time. Only one polycrystal etching machine is used. Productivity is high.
Description
Technical field
The present invention relates to semiconductor fabrication process field, more particularly, to a kind of lithographic method of composite film.
Background technology
At present, microelectric technique comes into super large-scale integration and age of system integration, and microelectric technique is
Become mark and the basis of information age.
In microelectric technique, the manufacture of one piece of IC chip completes, and needs through IC design, mask plate
The operations such as manufacture, original material manufacture, chip manufacture, encapsulation, test.Wherein, formation process is performed etching to semi-conductor silicon chip
The technology of groove, it appears particularly critical.
Etching (etch) is one of semiconductor fabrication process, microelectronics ic manufacturing process and minute manufacturing technique phase
When important step, it is a kind of main technique that graphical (pattern) being associated with photoetching is processed.
In conjunction with Fig. 1, device 200 surface is sequentially depositing the second polycrystal layer 30, silicon dioxide layer 20 and the first polycrystal layer 10 3
Rotating fields, the second polycrystal layer 30, silicon dioxide layer 20 and the first polycrystal layer 10 composition composite film, on the first polycrystal layer 10
Side is the photoresistance 40 etching.Some special process need use and there is the second polycrystal layer 30, silicon dioxide layer 20 and
The bar of the composite film structure of the first polycrystal layer 10 three-decker is as cantilever beam or other structures part.Accordingly, it would be desirable to will
Etch out by the composite film that the second polycrystal layer 30, silicon dioxide layer 20 and the first polycrystal layer 10 form.
The lithographic method of traditional composite film is to grow the second polycrystal layer 30, silicon dioxide layer 20 and the first polycrystalline
After layer 10 trilamellar membrane layer, gluing, exposure, development, are then used by three equipment and perform etching, and carry out three quarters after one layer of photoetching
Erosion.However, this method uses the quantity of board more, lead to production capacity low.
Content of the invention
Based on this it is necessary to provide a kind of lithographic method of the higher composite film of lower production capacity.
A kind of lithographic method of composite film, comprises the steps:
Deposition is provided to have the device of composite film, described composite film is by the first polysilicon layer, silicon dioxide layer and second
Polysilicon layer stacks gradually formation and described second polysilicon layer and described device directly contact；
Surface preparation is carried out to described first polysilicon layer；
Described first polysilicon layer coats photoresistance, then to described first polysilicon under the first process gas atmosphere
Layer carries out main etching, then carries out over etching to described first polysilicon layer；
Under the second process gas atmosphere, main etching is carried out to described silicon dioxide layer, then to described silicon dioxide layer
Carry out over etching；
Under described first process gas atmosphere, main etching is carried out to described second polysilicon layer, then to described second
Polysilicon layer carries out over etching.
In one embodiment, described first process gas atmosphere is hbr, cl2And o2Mixed atmosphere, described hbr, cl2
And o2Mixed atmosphere in hbr, cl2And o2Molar ratio range be 1:1.6～3:0.01～0.05.
In one embodiment, described second process gas atmosphere is cf4And chf3Mixed atmosphere, described cf4And chf3
Mixed atmosphere in cf4And chf3Molar ratio range be 3～5:4.
In one embodiment, described first polysilicon layer is carried out in the operation of over etching, over etching amount be 40%～
50%.
In one embodiment, described silicon dioxide layer is carried out in the operation of over etching, over etching amount is 30%～60%.
In one embodiment, described second polysilicon layer is carried out in the operation of over etching, over etching amount be 30%～
40%.
In one embodiment, cl is passed through in the operation that described composite film is carried out with surface preparation2Etch.
In one embodiment, the operation carrying out main etching to described first polysilicon layer also includes: completes after main etching
Perform etching the operation of end point determination.
In one embodiment, the lithographic method of described composite film is realized by polycrystal etching board.
In one embodiment, the power of described polycrystal etching board is 600w～900w.
The lithographic method of this composite film is carried out to the first polysilicon layer, silicon dioxide layer and the second polysilicon layer successively
Etching, carries out three etchings it is only necessary to use a polycrystal etching board, with respect to traditional composite film after a photoetching
Lithographic method, reduces the human cost Manufacturing cost required for composite film etching, and production capacity is higher.
Brief description
Fig. 1 be an embodiment deposition have composite film device schematic diagram；
Fig. 2 is the flow chart of the lithographic method of the composite film of an embodiment.
Specific embodiment
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.Elaborate a lot of details in order to fully understand this in the following description
Bright.But the present invention can be much to implement different from alternate manner described here, and those skilled in the art can be not
Similar improvement is done, therefore the present invention is not embodied as being limited by following public in the case of running counter to intension of the present invention.
For ordinary circumstance, polysilicon layer, after most of region is etched totally, is confirmed whether usually through monitoring device
Etching is clean, but actually can there is monitoring leak, that is to say there is the clean region that is not etched on a small quantity, and for
The etched portions increasing on the basis of etched time or etch amount are referred to as over etching amount.
The lithographic method of an embodiment composite film as shown in Figure 2, comprises the steps:
S10, offer deposition have the device 200 of composite film.
In conjunction with Fig. 1, composite film is stacked gradually by the first polysilicon layer 10, silicon dioxide layer 20 and the second polysilicon layer 30
Formed, and the second polysilicon layer 30 and device 200 directly contact.
The concrete thickness of the first polysilicon layer 10, silicon dioxide layer 20 and the second polysilicon layer 30 is typically based on and is actually needed
As long as determining it is to be understood that its thickness range meets the understanding of those skilled in the art, all permissible.
S20, surface preparation is carried out to the first polysilicon layer 10.
First polysilicon layer 10 is due to direct and air contact, the often one layer sio very thin due to aoxidizing generation2, one
As can pass through cl2Erosion removal, by selecting suitable cl2Concentration and etching time, complete the operation of surface preparation.
In present embodiment, the operation of surface preparation is realized by polycrystal etching board.The power of polycrystal etching board
Can be 600w～900w.cl2As long as the least concentration that limited more than polycrystal etching board of concentration and be less than polycrystal etching
The maximum concentration that board is limited.Specific etching time then needs according to cl2Concentration determine.In general, cl2Concentration
When higher, etching time is shorter；And cl2Concentration relatively low when, etching time is longer.
S30, on the first polysilicon layer 10 coat photoresistance 40, then under the first process gas atmosphere, to the first polycrystalline
Silicon layer 10 carries out main etching, then carries out over etching to the first polysilicon layer 10.
Photoresistance 40 selects material commonly used in the art, in the present invention not too many restriction.
Before main etching is carried out to the first polysilicon layer 10, need etching atmosphere is carried out stable, be typically slowly introducing the
One process gas is until reach requirement.
First process gas atmosphere is typically chosen hbr, cl2And o2Mixed atmosphere.hbr、cl2And o2Mixed atmosphere in
hbr、cl2And o2Molar ratio range be 1:1.6～3:0.01～0.05.
In s30, also need to after the completion of main etching perform etching end point determination, thus confirming that the first polysilicon layer 10 etching is dry
Only.
In s30, over etching amount can be 40%～50%, thus ensureing that the first polysilicon layer 10 etches totally and not right
Silicon dioxide layer 20 impacts.Typically adjust over etching amount by adjusting etch period.
In present embodiment, the main etching of the first polysilicon layer 10 and the operation of over etching pass through polycrystal etching board in fact
Existing.The power of polycrystal etching board can be 600w～900w.
S40, under the second process gas atmosphere, main etching is carried out to silicon dioxide layer 20, then to silicon dioxide layer 20
Carry out over etching.
Before main etching is carried out to silicon dioxide layer 20, need etching atmosphere is carried out stablizing, be typically slowly introducing second
Process gas simultaneously excludes the first process gas, until it reaches require.
Second process gas atmosphere is typically chosen cf4And chf3Mixed atmosphere.cf4And chf3Mixed atmosphere in cf4With
chf3Molar ratio range be 3～5:4.
In s40, also need to after the completion of main etching perform etching end point determination, thus confirming that silicon dioxide layer 20 etching is dry
Only.
In s40, over etching amount can be 30%～60%, thus ensureing that silicon dioxide layer 20 etches totally, and not to the
Two polysilicon layers 30 impact.Typically adjust over etching amount by adjusting etch period.
In present embodiment, the main etching of silicon dioxide layer 20 and the operation of over etching are realized by polycrystal etching board.
The power of polycrystal etching board can be 600w～900w.Using polycrystal etching board silicon dioxide layer 20 is carried out main etching and
During over etching, typically adopt timed etch, and selective etching speed is relatively low and selects higher quarter to the second polysilicon layer 30
Erosion menu (the etch amount very little to the second polysilicon layer 30 for this menu), the second polysilicon layer 30.
It is pointed out that it is not necessary to carry out surface preparation in advance when performing etching to silicon dioxide layer 20,
Do not need to coat photoresistance again.
S50, under described first process gas atmosphere, main etching is carried out to the second polysilicon layer 30, then to more than second
Crystal silicon layer 30 carries out over etching.
Before main etching is carried out to the second polysilicon layer 30, need etching atmosphere is carried out stable, be typically slowly introducing the
One process gas simultaneously excludes the second process gas, until it reaches require.
Second process gas atmosphere is as shown in s30.
In s50, also need to after the completion of main etching perform etching end point determination, thus confirming that the second polysilicon layer 30 etching is dry
Only.
In s50, over etching amount can be 30%～40%, thus ensureing that the second polysilicon layer 30 etches totally and not right
Device 200 impacts.Typically adjust over etching amount by adjusting etch period.
In present embodiment, the main etching of the second polysilicon layer 30 and the operation of over etching pass through polycrystal etching board in fact
Existing.The power of polycrystal etching board can be 600w～900w.
It is pointed out that it is not necessary to carry out surface preparation in advance when performing etching to the second polysilicon layer 30,
Also without coating photoresistance again.
The lithographic method of this composite film is successively to the first polysilicon layer 10, silicon dioxide layer 20 and the second polysilicon layer
30 perform etching, and carry out three etchings it is only necessary to use a polycrystal etching board after a photoetching, are combined with respect to traditional
The lithographic method of film layer, reduces the human cost Manufacturing cost required for composite film etching, and production capacity is higher.
Additionally, the lithographic method of traditional etching composite film is directed to different material (polysilicon and dioxies in etching
SiClx), need using two kinds of boards so that etch topography is affected to lead to etch topography to be difficult to protect by two kinds of different platform situations
Card and monitoring.And the lithographic method of this composite film only needs using a kind of polycrystal etching board, is conducive to etch topography
Ensure and monitor.
Finally, due to the first polysilicon layer 10 and the second polysilicon layer 30 etching process are extremely similar, etched using three times
It is easily caused obscuring of the first polysilicon layer 10 and the second polysilicon layer 30, increase the risk of operator's maloperation.And it is this
The lithographic method of composite film only needs, using a kind of polycrystal etching board, to reduce the wind of etching operation personnel's maloperation
Danger.
Embodiment described above only have expressed the several embodiments of the present invention, and its description is more concrete and detailed, but simultaneously
Therefore the restriction to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, some deformation can also be made and improve, these broadly fall into the guarantor of the present invention
Shield scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (8)
1. a kind of lithographic method of composite film is it is characterised in that comprise the steps:
Deposition is provided to have the device of composite film, described composite film is by the first polysilicon layer, silicon dioxide layer and the second polycrystalline
Silicon layer stacks gradually formation and described second polysilicon layer and described device directly contact；
Surface preparation is carried out to described first polysilicon layer；
Described first polysilicon layer coats photoresistance, then under the first process gas atmosphere, described first polysilicon layer is entered
Row main etching, then carries out over etching to described first polysilicon layer；
Under the second process gas atmosphere, main etching is carried out to described silicon dioxide layer, then described silicon dioxide layer is carried out
Over etching；
Under described first process gas atmosphere, main etching is carried out to described second polysilicon layer, then to described second polycrystalline
Silicon layer carries out over etching；Described first process gas atmosphere is hbr, cl2And o2Mixed atmosphere, described hbr, cl2And o2Mixed
Close hbr, cl in atmosphere2And o2Molar ratio range be 1:1.6～3:0.01～0.05；
Described second process gas atmosphere is cf4And chf3Mixed atmosphere, described cf4And chf3Mixed atmosphere in cf4With
chf3Molar ratio range be 3～5:4.
2. the lithographic method of composite film according to claim 1 is it is characterised in that carry out to described first polysilicon layer
In the operation of over etching, over etching amount is 40%～50%.
3. the lithographic method of composite film according to claim 1 was it is characterised in that carried out to described silicon dioxide layer
In the operation of etching, over etching amount is 30%～60%.
4. the lithographic method of composite film according to claim 1 is it is characterised in that carry out to described second polysilicon layer
In the operation of over etching, over etching amount is 30%～40%.
5. the lithographic method of composite film according to claim 1 is it is characterised in that carry out surface to described composite film
Cl is passed through in the operation of pretreatment2Etch.
6. the lithographic method of composite film according to claim 1 is it is characterised in that carry out to described first polysilicon layer
The operation of main etching also includes: carries out the operation of etching terminal detection after completing main etching.
7. the lithographic method of the composite film according to any one in claim 1～6 is it is characterised in that described be combined
The lithographic method of film layer is realized by polycrystal etching board.
8. the lithographic method of composite film according to claim 7 is it is characterised in that the power of described polycrystal etching board
For 600w～900w.
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| CN201310149253.0A CN104124134B (en) | 2013-04-25 | 2013-04-25 | Etching method of composite membrane |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310149253.0A CN104124134B (en) | 2013-04-25 | 2013-04-25 | Etching method of composite membrane |
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| CN104124134B true CN104124134B (en) | 2017-02-01 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101202224A (en) * | 2006-12-14 | 2008-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for polysilicon etching |
| CN101339903A (en) * | 2007-06-27 | 2009-01-07 | 应用材料股份有限公司 | Methods for high temperature etching a high-k material gate structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005041177A (en) * | 2003-07-25 | 2005-02-17 | Fuji Xerox Co Ltd | Process for producing heating resistor, process for manufacturing ink jet recording head |
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2013
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101202224A (en) * | 2006-12-14 | 2008-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for polysilicon etching |
| CN101339903A (en) * | 2007-06-27 | 2009-01-07 | 应用材料股份有限公司 | Methods for high temperature etching a high-k material gate structure |
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Effective date of registration: 20170926 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |
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