CN104122209A - Visual observing system for growth process of microcrystalline silicon film and measurement method - Google Patents
Visual observing system for growth process of microcrystalline silicon film and measurement method Download PDFInfo
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- CN104122209A CN104122209A CN201410359091.8A CN201410359091A CN104122209A CN 104122209 A CN104122209 A CN 104122209A CN 201410359091 A CN201410359091 A CN 201410359091A CN 104122209 A CN104122209 A CN 104122209A
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Abstract
The invention discloses a visual observing system for observing growth design of a microcrystalline silicon film in real time and a measurement method, which effectively improve the defect that a traditional polarization microscope is relatively low in resolution in an observing process. The visual observing system for the growth process of the microcrystalline silicon film comprises a light source, a pinhole, a polarizer, a 1/4 wave plate, a convergent lens, a beam splitting prism, a vertical objective lens, a sample, an objective table, a polarization analyzer, a CCD camera and a computer. The visual observing system has the beneficial effects that a scanning problem in a traditional film thickness detection method is effectively improved, the continuous dynamic detection of the film is realized, the detection efficiency and precision are improved, and the resolution is high; besides, the observing system disclosed by the invention is simple in structure, and the method is simple, convenient and feasible and is convenient to popularize.
Description
Technical field
The invention belongs to field of optical measuring technologies, especially relate to a kind of visual inspection system and method for microcrystalline silicon film growth course.
Background technology
Since the nineties in 20th century, China's photovoltaic industry develops rapidly, and over especially past 5 years, the average growth rate per annum of solar cell has all reached fulminant level.End 2010, the output of the solar-energy photo-voltaic cell of China has accounted for 50% of world wide production.But the report that the photovoltaic enterprise development of Jin Liangnian China is restricted occurs again and again, analysis shows, too fast market expansion speed and relative development more slowly technical merit Shi Shi China photovoltaic industry meet with the one of the main reasons of bottleneck.Therefore, in order to extricate oneself out of a crisis, make the photovoltaic industry of China towards healthy future development, the scientific and technological content that improves its product is imperative.
The features such as the kind of solar cell is numerous, and wherein, microcrystalline silicon film has high-energy conversion ratio because of it, and the life-span is long, being considered to has one of material of application prospect most.But for microcrystalline silicon film, in material preparation, the main problem existing is exactly that its growth rate is lower, thereby causes manufacturing cost higher.Therefore studying the growth mechanism of microcrystal silicon material and improving its performance becomes the hot issue of current microcrystalline silicon film battery research, is paid attention to widely.And for real-time monitored and the analysis of its growth course, be the basis of its growth mechanism of research.
At present, the main method for detection of microcrystalline silicon film thickness has atomic force microscopy (AFM), X-ray diffraction method (XRD), Fourier transform infrared spectrometer (FTIR) and ellipsometer etc.Atomic force microscope is to be developed on the basis of scanning tunnel microscope (STM) by people such as Binnig for 1986.It studies surface structure and the character of material by detecting atomic weak interaction between atoms power between testing sample surface and a miniature force sensitive element.Micro-cantilever one end of a pair of faint power extreme sensitivity is fixed, and the small needle point of the other end approaches sample, at this moment it will with its interaction, acting force will make micro-cantilever generation deformation or motion state change.When scanning samples, utilize sensor to detect these and change, just can obtain distribution of forces information, thereby obtain surface structure information with nanometer resolution.The advantages such as it has high resolution, nondestructive measurement.X-ray diffraction technology is one of conventional structure detection means, and it is the technology of utilizing the undulatory property of X ray and the periodicity of internal crystal structure to carry out crystal structure analysis, and it has fast, accurately and the advantage such as convenient.Infra-red sepectrometry is the effective means of differentiating material and amalyzing substances structure, has been widely used in the qualitative firm and quantitative test of various materials, and has studied the aspects such as intermolecular and intramolecular interaction.Infrared absorption spectrum is that material molecule has absorbed after infrared radiation, cause molecular vibration one rotational energy level transition and the spectrum that forms, because appearing at infrared region, so be referred to as infrared spectrum, " material has selectivity to the absorption of infrared light; therefore different material has different infrared absorption spectruies, can judge accordingly the kind of material.The measuring principle of ellipsometer is optical polarization characteristic.When polarized light is from a kind of medium incides another kind of medium, the light of its reflection polarize branch along with medium refraction index, dielectric thickness, incident angle size waits change.Utilize this phenomenon, thereby can obtain by measuring the conversion of outgoing polarization of light composition the parameter such as thickness and refractive index of medium.And along with the development of computing machine, the robotization of hardware and the maturation of software have improved the speed of computing greatly, ripe software provides the new method of dealing with problems, and therefore, ellipsometer has been widely used in research, exploitation and manufacture process now.Comprehensively relatively above several method, its common feature is to have higher resolving power and measuring accuracy, has good measurement effect for static film.And in the observation of the growth course of the foregoing microcrystalline silicon film of dynamic membrane, because above measuring method all needs to scan detection in the time measuring, measurement range is little, and Measuring Time is long, can not reflect in real time the real surface information of sample, therefore not be suitable in real time dynamically observation.Polarization microscope utilizes the principle of traditional ellipsometer, and measuring principle is simple, has advantages of that measurement range is large simultaneously, does not need scanning can realize the film detection of dynamic of nano-precision.Therefore the method is more and more subject to the extensive concern of Chinese scholars.But the general problem one existing of current polarization microscope while being large-range measuring resolving power lower, the 2nd, observation sample is more single, cannot adapt to the observation of microcrystalline silicon film.
Summary of the invention
For addressing the above problem, the invention discloses a kind of visual inspection system and measuring method for the growth design of real-time monitored microcrystalline silicon film, the lower defect of resolution when effectively having improved traditional polarization microscope and observing.
In order to achieve the above object, the invention provides following technical scheme:
A visual inspection system for microcrystalline silicon film growth course, comprises light source, pin hole, the polarizer, quarter wave plate, plus lens, Amici prism, vertical object lens, sample, objective table, analyzer, CCD camera, computing machine, described plus lens comprises the first plus lens, the second plus lens, the 3rd plus lens, the 4th plus lens, described the first plus lens, pin hole, the second plus lens, the polarizer, quarter wave plate, the 3rd plus lens and Amici prism are successively set on the front of source of parallel light, described light source along light source exit direction, the first plus lens, pin hole, the second plus lens, the polarizer, quarter wave plate, the each optical axis coincidence of the 3rd plus lens, point optical plane of described Amici prism is to light source incline and from the horizontal by 45 degree, described pin hole is positioned on the front focal plane of the first plus lens, described the second plus lens is arranged on pin hole front and equals the focal length of the second plus lens, the horizontal optical axis of described the 3rd plus lens optical axis deviation Amici prism with the distance of pin hole, its front focal plane overlaps with vertical objective lens ', described vertical object lens be arranged on Amici prism under, objective table be arranged on vertical object lens under, described analyzer be arranged on Amici prism directly over, the 4th plus lens be arranged on analyzer directly over, CCD camera be horizontally set on the 4th plus lens directly over, the optical axis of described CCD camera, the optical axis of the 4th plus lens, the vertical optical axis of Amici prism, the optical axis coincidence of vertical object lens, described source of parallel light, pin hole, the first plus lens, the second plus lens, the polarizer, the optical axis deviation primary optical axis of quarter wave plate and the 3rd plus lens, the front focal plane of described the 4th plus lens overlaps with vertical objective lens ', described CCD camera is connected with computing machine.
Further, the angle of the described polarizer makes microcrystalline silicon film thickness be directly proportional to the light intensity that CCD camera receives.
Further, described objective table height is focused automatically by computer control.
The present invention also provides a kind of microcrystalline silicon film method for measuring thickness of the visual inspection system based on microcrystalline silicon film growth course, comprises the steps:
Steps A, calculates visual inspection system polarizer under extinction conditions, the angle value of analyzer according to the complex index of refraction of microcrystal silicon;
Step B, the angle of the fixing analyzer of angle value of the analyzer calculating according to steps A, by the rotation polarizer, the slight angle that changes the polarizer is placed many group different-thickness films under each angle condition on objective table, obtains image intensity information, obtain CCD collected by camera arrives under polarizer different angles measured film thickness numerical value and intensity signal, and curve plotting, obtain polarizer angle that light intensity is directly proportional to film thickness, and obtain direct ratio formula;
Step C, places sample microcrystalline silicon film on objective table, adjust polarizer angle and be in step B, obtain make light intensity be directly proportional to film thickness time angle value;
Step D, adjusts objective table height, observes the realtime graphic of CCD camera and focuses;
Step e, computing machine obtains image information;
Step F, image is processed and storage;
Step G, obtains the intensity signal of image each point, carries out after image is processed obtaining average intensity data, calculates fast corresponding thickness according to the direct ratio formula obtaining in step B.
As preferably, the film in described step B is trilamellar membrane structure.
Compared with prior art, tool of the present invention has the following advantages and beneficial effect:
Effectively improved the scanning problem that conventional films thickness detecting method faces, realized the continuous detection of dynamic of film, improved the efficiency and the precision that detect, resolution is high.In addition, recording geometry provided by the invention is simple in structure, and measuring method is simple and easy to do, is convenient to promote.
Brief description of the drawings
Fig. 1 is the visual inspection system architecture schematic diagram of microcrystalline silicon film growth course provided by the invention;
Fig. 2 is the light transmission shaft angle schematic diagram of polarizer;
Fig. 3 is the 1951 USAF resolution charts that the visual inspection system of microcrystalline silicon film growth course is observed;
Fig. 4 is resolving power fitting result schematic diagram.
Reference numerals list:
1-source of parallel light; The 2-the first plus lens; 3-pin hole; The 4-the second plus lens; 5-polarizer; 6-quarter wave plate; The 7-the three plus lens; 8-Amici prism; 9-vertical object lens; 10-sample thin film, 11-objective table; 12-analyzer; The 13-the four plus lens 4; 14-CCD camera; 15-computing machine.
Embodiment
Below with reference to specific embodiment, technical scheme provided by the invention is elaborated, should understands following embodiment and only be not used in and limit the scope of the invention for the present invention is described.
As shown in Figure 1, the invention provides a kind of visual inspection system of microcrystalline silicon film growth course, comprise light source 1, pin hole 3, the polarizer 5, quarter wave plate 6, plus lens, Amici prism 8, vertical object lens 9, sample 10, objective table 11, analyzer 12, CCD camera 14, computing machine 15.Wherein, lighting source 1 adopts monochromatic high power parallel source, and its wavelength is 460nm, output power 46 μ w.Pinhole diameter 100 μ m.Described plus lens is convex lens, specifically comprises the first plus lens 2, the second plus lens 4, the 3rd plus lens 7, the 4th plus lens 13, and focal length is respectively 30mm, 60mm, 90mm, and 200mm.Object lens 9 enlargement factors are 50 times, and objective focal length is 3.6mm, effective diameter 6.8mm.Described the first plus lens 2, pin hole 3, the second plus lens 4, the polarizer 5, quarter wave plate 6, the 3rd plus lens 7 and Amici prism 8 are successively set on the front of source of parallel light 1 along light source 1 exit direction, simultaneously, point optical plane of Amici prism 8 tilts and from the horizontal by 45 degree, described pin hole 3 is positioned on the front focal plane of the first plus lens 2, described light source 1 to light source 1, the first plus lens 2, pin hole 3, the second plus lens 4, the polarizer 5, quarter wave plate 6, the each optical axis coincidence of the 3rd plus lens 7, described vertical object lens 9 be arranged on Amici prism 8 under, objective table 11 be arranged on vertical object lens 9 under, described analyzer 12 be arranged on Amici prism 8 directly over, the 4th plus lens 13 be arranged on analyzer 45 directly over, CCD camera level 14 be arranged on the 4th plus lens 13 directly over, the optical axis of described CCD camera 14, the optical axis of the 4th plus lens 13, the vertical optical axis of Amici prism 8, the optical axis coincidence of vertical object lens 9, described source of parallel light 1, pin hole 2, the first plus lens 3, the second plus lens 4, the polarizer 5, the primary optical axis of the optical axis coincidence of the optical axis deviation of quarter wave plate 6 and the 3rd plus lens 7 and Amici prism 8, above-mentioned source of parallel light 1～three plus lens 7 is coaxial and all depart from the primary optical axis of Amici prism, can reduce like this lens in these parts, the diameter of polaroid, thus reduce costs.In this example, light source 1 optical axis and Amici prism centre distance are 3.1mm.Described CCD camera 14 is connected with computing machine 15.
As improvement, described objective table 11 is connected with computing machine, and objective table 11 height are focused automatically by computer control.
The first plus lens 2 is arranged between pin hole 3 and source of parallel light 1 along the exit direction of source of parallel light 1, source of parallel light 1, the first plus lens 2,3 threes are coaxial for pin hole, the second plus lens 4 is arranged on pin hole 3 fronts, and the distance of itself and pin hole 3 equals the focal length of the second plus lens 4, transfer parallel beam to through the divergent rays of the second plus lens 4 like this, thereby make incident ray pass through the polarizer 5 and quarter wave plate 6 with great luminous energy.Described the 3rd plus lens 7 is arranged between quarter wave plate 6 and Amici prism 8, its optical axis and quarter wave plate 6 optical axis coincidences, depart from the horizontal optical axis of Amici prism 8, the front focal plane of the 3rd plus lens 7 overlaps with object lens 9 back focal planes under Amici prism 8 simultaneously, thereby makes light source image in the back focal plane of vertical object lens 9.Described the 4th plus lens 13 is horizontally set between CCD camera 14 and analyzer 12 and the optical axis of the 4th plus lens 13 and the vertical optical axis coincidence of Amici prism 8, and the front focal plane of the 4th plus lens 13 overlaps with vertical object lens 9 back focal planes under Amici prism 8 simultaneously.The first plus lens 2, the second plus lens 4, the 3rd plus lens 7, the 4th plus lens 13 arranging by said method is conducive to ensure consistance and the stability of focal plane in production testing, thereby improves the precision of the service efficiency of light source and the stability of device systems and detection and detect effect.
Preferably, visual inspection system adopts high sensitization CCD camera as signal receiving unit, and design size is 8 × 8mm
2.
The present invention also provides a kind of microcrystalline silicon film method for measuring thickness based on above-mentioned recording geometry, comprises the steps:
First calculate visual inspection system polarizer under extinction conditions, the angle value of analyzer according to the complex index of refraction of microcrystal silicon;
When the incident light tilting is by after microcrystalline silicon film, the light being reflected by substrate presents light and shade because film thickness is different to be changed, and therefore can obtain the thickness information of microcrystalline silicon film by detecting polarized light intensity information.In visual inspection system provided by the invention, carry out analog computation, can change light intensity that CCD detects and the corresponding relation of microcrystalline silicon film thickness by changing the angle of the polarizer and analyzer.We can utilize MATLAB matching, utilize 2 × 2 matrix algorithmss to carry out analog computation to film thickness measuring, derive the relation between thickness and polarizer angle.But what calculate like this is only theoretical value, in practical operation, need can obtain more accurate relation formula by repetition test: the angle of first fixing analyzer, by the rotation polarizer, the slight angle (for example once changing 0.1 degree) that changes the polarizer, and under each angle, on objective table, place and organize different-thickness films (these film thicknesses can be measured by other modes in advance) more, adjust the height of objective table, observing the realtime graphic of CCD camera focuses, obtain image information by computer, and carry out image processing and storage, obtain the intensity signal of image each point, carry out after image is processed obtaining average intensity data, analyze CCD collected by camera arrives under polarizer different angles measured film thickness numerical value and intensity signal, and curve plotting, obtain the polarizer angle that light intensity is directly proportional to film thickness, and obtain direct ratio formula.
Because microcrystalline silicon film exists amorphous hatching layer in first growth course, and very large to the property effect of film.In order to approach actual conditions, in debugging step, adopt trilamellar membrane structure to simulate it.
As shown in Figure 2, first the angle of adjusting quarter wave plate and analyzer is respectively 45 ° and-50.1 °, polarizer angle is adjusted in segmentation, and carry out respectively the image intensity information acquisition of different-thickness trilamellar membrane, through data analysis, polarizer angular setting is 54.8 ° the most at last, and now film thickness is directly proportional to the light intensity that CCD camera receives.
Carry out thickness of sample while measuring, first place sample microcrystalline silicon film on objective table, adjust polarizer angle and be in step B, obtain make light intensity be directly proportional to film thickness time angle value;
Adjust objective table height, observe the realtime graphic of CCD camera and focus;
Obtain image information;
Image is processed and storage;
Obtain the intensity signal of image each point, carry out after image is processed obtaining average intensity data, calculate fast corresponding thickness according to above-mentioned direct ratio formula.
Fig. 3 is the 1951 USAF resolution charts of being observed by visual inspection system, and Fig. 4 is resolving power fitting result schematic diagram, and as can be seen from the figure, the maximum measurement range of visual inspection system is 160 × 160 μ m
2, resolving power can reach 0.34 μ m.The present invention has improved the scanning problem that conventional films thickness detecting method faces effectively, has realized the continuous detection of dynamic of film, has improved the efficiency and the precision that detect, and resolution is high.In addition, recording geometry provided by the invention is simple in structure, and method is simple, is convenient to promote.
The disclosed technological means of the present invention program is not limited only to the disclosed technological means of above-mentioned embodiment, also comprises the technical scheme being made up of above technical characterictic combination in any.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (5)
1. a visual inspection system for microcrystalline silicon film growth course, is characterized in that: comprise light source, pin hole, the polarizer, quarter wave plate, plus lens, Amici prism, vertical object lens, sample, objective table, analyzer, CCD camera, computing machine, described plus lens comprises the first plus lens, the second plus lens, the 3rd plus lens, the 4th plus lens, described the first plus lens, pin hole, the second plus lens, the polarizer, quarter wave plate, the 3rd plus lens and Amici prism are successively set on the front of source of parallel light, described light source along light source exit direction, the first plus lens, pin hole, the second plus lens, the polarizer, quarter wave plate, the each optical axis coincidence of the 3rd plus lens, point optical plane of described Amici prism is to light source incline and from the horizontal by 45 degree, described pin hole is positioned on the front focal plane of the first plus lens, described the second plus lens is arranged on pin hole front and equals the focal length of the second plus lens, the horizontal optical axis of described the 3rd plus lens optical axis deviation Amici prism with the distance of pin hole, its front focal plane overlaps with vertical objective lens ', described vertical object lens be arranged on Amici prism under, objective table be arranged on vertical object lens under, described analyzer be arranged on Amici prism directly over, the 4th plus lens be arranged on analyzer directly over, CCD camera be horizontally set on the 4th plus lens directly over, the optical axis of described CCD camera, the optical axis of the 4th plus lens, the vertical optical axis of Amici prism, the optical axis coincidence of vertical object lens, described source of parallel light, pin hole, the first plus lens, the second plus lens, the polarizer, the optical axis deviation primary optical axis of quarter wave plate and the 3rd plus lens, the front focal plane of described the 4th plus lens overlaps with vertical objective lens ', described CCD camera is connected with computing machine.
2. the visual inspection system of microcrystalline silicon film growth course according to claim 1, is characterized in that: the angle of the described polarizer makes microcrystalline silicon film thickness be directly proportional to the light intensity that CCD camera receives.
3. the visual inspection system of microcrystalline silicon film growth course according to claim 1 and 2, is characterized in that: described objective table height is focused automatically by computer control.
4. a microcrystalline silicon film method for measuring thickness, the visual inspection system of the microcrystalline silicon film growth course based on described in any one in claim 1～3 realizes, and it is characterized in that, comprises the steps:
Steps A, calculates visual inspection system polarizer under extinction conditions, the angle value of analyzer according to the complex index of refraction of microcrystal silicon;
Step B, the angle of the fixing analyzer of angle value of the analyzer calculating according to steps A, by the rotation polarizer, the slight angle that changes the polarizer is placed many group different-thickness films under each angle condition on objective table, obtains image intensity information, obtain CCD collected by camera arrives under polarizer different angles measured film thickness numerical value and intensity signal, and curve plotting, obtain polarizer angle that light intensity is directly proportional to film thickness, and obtain direct ratio formula;
Step C, places sample microcrystalline silicon film on objective table, adjust polarizer angle and be in step B, obtain make light intensity be directly proportional to film thickness time angle value;
Step D, adjusts objective table height, observes the realtime graphic of CCD camera and focuses;
Step e, computing machine obtains image information;
Step F, image is processed and storage;
Step G, obtains the intensity signal of image each point, carries out after image is processed obtaining average intensity data, calculates fast corresponding thickness according to the direct ratio formula obtaining in step B.
5. microcrystalline silicon film method for measuring thickness according to claim 4, is characterized in that: the film in described step B is trilamellar membrane structure.
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| CN113484326A (en) * | 2021-07-06 | 2021-10-08 | 南开大学 | Integrated laser damage surface observation system |
| CN114812425A (en) * | 2022-06-30 | 2022-07-29 | 江苏康辉新材料科技有限公司 | Method for observing micro-deformation of film surface |
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