CN104119862B - 一种具有紫色荧光发射性能的配合物及其制备方法 - Google Patents

一种具有紫色荧光发射性能的配合物及其制备方法 Download PDF

Info

Publication number
CN104119862B
CN104119862B CN201410377613.7A CN201410377613A CN104119862B CN 104119862 B CN104119862 B CN 104119862B CN 201410377613 A CN201410377613 A CN 201410377613A CN 104119862 B CN104119862 B CN 104119862B
Authority
CN
China
Prior art keywords
fluorescent material
barbituric acid
purple
preparation
luminescence property
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410377613.7A
Other languages
English (en)
Other versions
CN104119862A (zh
Inventor
刘素娟
李星
康晶燕
赵亚云
赵秀华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Guanggu Biotechnology Research Institute Co ltd
Original Assignee
Ningbo University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningbo University filed Critical Ningbo University
Priority to CN201410377613.7A priority Critical patent/CN104119862B/zh
Publication of CN104119862A publication Critical patent/CN104119862A/zh
Application granted granted Critical
Publication of CN104119862B publication Critical patent/CN104119862B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

本发明公开了一种具有紫色发光性能的荧光材料及其制备方法,特点是:在碱性溶液中具有紫色特征吸收的巴比妥酸和邻菲罗啉与具有光学活性的镉离子进行化学反应制得荧光材料巴比妥酸镉化合物,该荧光材料是一种具有一定空间结构的巴比妥酸镉化合物,其分子式为C32H32CdN8O11,晶系为单斜,空间群为P2(1)/C,晶胞参数α=γ=90°,β=93.98°,镉离子采用六配位变形的八面体构型。该化合物含有丰富光学活性的Cd(II)离子,有利于电子跃迁和能量传递,具有良好的光电活性,显示出良好的紫光发射性能。

Description

一种具有紫色荧光发射性能的配合物及其制备方法
技术领域
本发明涉及一种荧光材料,尤其是涉及一种具有紫色发光性能的荧光材料及其制备方法。
背景技术
荧光,又作“萤光”,是指一种光致发光的冷发光现象。当某种常温物质经某种波长的入射光(通常是紫外线或X射线)照射,吸收光能后进入激发态,并且立即退激发并发出比入射光的的波长长的出射光(通常波长在可见光波段);而且一旦停止入射光,发光现象也随之立即消失。具有这种性质的出射光就被称之为荧光。具有强荧光性的物质,其分子往往具有以下特征:a、大的共轭双键(π键)体系;b、刚性的平面结构;c、环上的取代基是给电子取代基团;d、其最低的电子激发单重态为(π,π*)型。随着科学技术的进步,人们对荧光的研究越来越多,荧光物质的应用范围越来越广。荧光物质除用作染料外,还在照明、生化和医疗、太阳能捕集器、宝石与矿物、防伪标记等领域得到了更广泛的应用。
荧光材料是由金属(锌、铬)硫化物或稀土氧化物与微量活性剂配合经煅烧而成。无色或浅白色,是在紫外光(200~400nm)照射下,依颜料中金属和活化剂种类、含量的不同,而呈现出各种颜色的可见光(380~780nm)。荧光材料分无机荧光材料和有机荧光材料。无机荧光材料的代表为稀土离子发光及稀土荧光材料,其优点是吸收能力强,转换率高,稀土配合物中心离子的窄带发射有利于全色显示,且物理化学性质稳定。由于稀土离子具有丰富的能级和4f电子跃迁特性,使稀土成为发光宝库,为高科技领域特别是信息通讯领域提供了性能优越的发光材料。有机小分子发光材料种类繁多,它们多带有共轭杂环及各种生色团,结构易于调整,通过引入烯键、苯环等不饱和基团及各种生色团来改变其共轭长度,从而使化合物光电性质发生变化。
荧光粉材料最早问世于1938年。早期Mokes等人合成了钨酸钙等荧光粉并用于荧光灯中。1948年开发出了磷酸盐荧光粉,此荧光粉发光性能比早期荧光粉有了显著改善。随着对荧光粉研究的不断深入,人们开发出了三基色荧光粉。把稀土元素作为激活剂引进荧光粉中,使荧光粉的发光性能得到明显的改善。所谓超细粉末是指尺度介于分子、原子与块状材料之间,包括金属、非金属、有机、无机和生物等多种颗粒材料,也称纳米颗粒材料。目前市场上荧光粉主要有硫化物系荧光粉,铝酸盐荧光粉,磷酸盐系荧光粉,稀土荧光粉等。从发光波段来说主要有近紫外激发的红色、绿色和蓝色荧光粉。
总之,近紫外发光的红色、绿色和蓝色荧光粉都是围绕着光致发光实现,近几年,许多新型体系的荧光粉被研制和开发利用,使得先前开发的荧光粉性能得到改善。尤其是开发与改善了的近紫外荧光粉,使其在光发射器件上体现应用。目前已涌现了许多新型体系,如氮氧化物体系和钼(钨)酸盐体系等很有发展前景的红粉。但对于紫色发光性能的荧光材料目前还有许多改进的工作去做,例如:热稳定性差、发光效率低等,以至于还需要开发更多的新型的体系,以便完善其性能。
近年来研究发现具有光学活性的金属离子与虽无共轭双键结构但在碱性溶液中产生紫外特征吸收的有机配体化合物反应显示出良好的发光性能。该类研究具有显著的创新性:无机成分和有机成分可以进行有目的的筛选与调控,通过筛选金属离子的大小,实现对发光波长的调控;另外,可以在分子水平上对材料的设计合成,有利于研究结构与性能的关系,探索材料的发光机理,从而为设计新型发光材料提供理论依据。
发明内容
本发明所要解决的首要技术问题是针对现有技术,提供一种具有良好的具有紫色发光性能的镉化合物荧光材料及其制备方法。
本发明为解决上述技术问题而采取的技术方案为:一种具有紫色发光性能的镉化合物荧光材料,该荧光材料是一种具有一定空间结构的巴比妥酸镉化合物,其分子式为C32H32CdN8O11,晶系为单斜,空间群为P2(1)/c,晶胞参数α=γ=90°,β=93.98°,镉离子采用六配位变形的八面体构型。
上述荧光材料的制备方法,包括以下步骤:
向10mL的烧杯中加入巴比妥酸(0.05~0.15mmol,0.0055~0.0165g),1,10-邻菲罗啉(0.05~0.15mmol,0.0095~0.0285g),4mL去离子水,然后在磁力搅拌器上加热搅拌至配体溶解,溶解后的配体转入25mL不锈钢聚四氟乙烯高压反应釜的内衬中,最后加入醋酸镉(0.05~0.15mmol,0.013~0.039g);
将反应釜密封放入烘箱中,在30~90℃温度条件下反应2d~4d;然后自然冷却至室温,打开反应釜经过滤得无色块状晶体;
将制得的无色块状晶体用蒸馏水冲洗,自然风干后得到巴比妥酸镉化合物,其分子式为C32H32CdN8O11
参加反应的物质均为化学纯。
与现有技术相比,本发明的优点在于:将在碱性溶液中具有紫色特征吸收的巴比妥酸和邻菲罗啉与具有光学活性的镉离子进行化学反应制得新型巴比妥酸镉化合物,该化合物作为紫色光发射材料具有准确的空间结构(图1)和准确的分子式;含有丰富光学活性的Cd(II)离子,有利于电子跃迁和能量传递,从而使化合物具有良好的光电活性。所制备的材料具有良好的紫光发射性能,作为荧光材料具有潜在的应用前景。而采用本发明的方法则可以获得40-80%的产率。
附图说明
图1为本发明的巴比妥酸紫色荧光材料中心金属原子的配位环境图;
图2为本发明的巴比妥酸紫色荧光材料的荧光发射光谱。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。
实施例1:
向10mL的烧杯中加入巴比妥酸(0.05mmol,0.0055g),1,10-邻菲罗啉(0.05mmol,0.0095g),4mL去离子水,然后在磁力搅拌器上加热搅拌至配体溶解,溶解后的配体转入25mL不锈钢聚四氟乙烯高压反应釜的内衬中,最后加入醋酸镉(0.10mmol,0.026g);将反应釜密封放入烘箱中,在30℃温度条件下反应2d;然后自然冷却至室温,打开反应釜经过滤得无色块状晶体。
实施例2:
向10mL的烧杯中加入巴比妥酸(0.10mmol,0.011g),1,10-邻菲罗啉(0.10mmol,0.019g),4mL去离子水,然后在磁力搅拌器上加热搅拌至配体溶解,溶解后的配体转入25mL不锈钢聚四氟乙烯高压反应釜的内衬中,最后加入醋酸镉(0.05mmol,0.013g);将反应釜密封放入烘箱中,在60℃温度条件下反应3d;然后自然冷却至室温,打开反应釜经过滤得无色块状晶体。
实施例3:
向10mL的烧杯中加入巴比妥酸(0.15mmol,0.0165g),1,10-邻菲罗啉(0.15mmol,0.0285g),4mL去离子水,然后在磁力搅拌器上加热搅拌至配体溶解,溶解后的配体转入25mL不锈钢聚四氟乙烯高压反应釜的内衬中,最后加入醋酸镉(0.15mmol,0.039g);将反应釜密封放入烘箱中,在90℃温度条件下反应4d;然后自然冷却至室温,打开反应釜经过滤得无色块状晶体。
将上述实施例中制得的无色块状晶体用蒸馏水冲洗,自然风干;经测定,该镉巴比妥酸化合物的分子式为C32H32CdN8O11。晶系为单斜,空间群为P2(1)/c,晶胞参数α=γ=90°,β=93.98°,镉离子采用六配位变形的八面体构型配位,每个金属镉原子与两个1,10-phen配体中的两个氮原子和分别来自不同的两个配位水中的两个氧原子配位,并且与每个镉配位的两个1,10-phen配体的平面处于垂直位置。
其晶体中心原子的配位环境图如图1所示。
将所制得的镉巴比妥酸化合物C32H32CdN8O11进行荧光性能测试,该化合物显示出良好的紫色光发射性能(如图2)。
所属领域的普通技术人员应当理解:以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (3)

1.一种具有紫色发光性能的荧光材料,其特征在于该荧光材料是一种具有一定空间结构的巴比妥酸镉化合物,其分子式C32H32CdN8O11,晶系为单斜,空间群为P2(1)/c,晶胞参数α=γ=90°,β=93.98°,镉离子采用六配位变形的八面体构型。
2.根据权利要求1所述的一种具有紫色发光性能的荧光材料的制备方法,其特征在于包括以下步骤:
1)、向10mL的烧杯中加入0.05~0.15mmol巴比妥酸,0.05~0.15mmol的1,10-邻菲罗啉,4mL去离子水,然后在磁力搅拌器上加热搅拌至配体溶解,溶解后的配体转入25mL不锈钢聚四氟乙烯高压反应釜的内衬中,最后加入0.05~0.15mmol醋酸镉;
2)、将反应釜密封放入烘箱中,在30~90℃温度条件下反应2d~4d;然后自然冷却至室温,打开反应釜经过滤得无色块状晶体;
3)、将制得的无色块状晶体用蒸馏水冲洗,自然风干后得到巴比妥酸镉化合物,即为所述的具有紫色发光性能的荧光材料,经测定,其分子式为C32H32CdN8O11
3.根据权利要求2所述的具有紫色发光性能的荧光材料的制备方法,其特征在于参加反应的物质均为化学纯。
CN201410377613.7A 2014-08-01 2014-08-01 一种具有紫色荧光发射性能的配合物及其制备方法 Expired - Fee Related CN104119862B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410377613.7A CN104119862B (zh) 2014-08-01 2014-08-01 一种具有紫色荧光发射性能的配合物及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410377613.7A CN104119862B (zh) 2014-08-01 2014-08-01 一种具有紫色荧光发射性能的配合物及其制备方法

Publications (2)

Publication Number Publication Date
CN104119862A CN104119862A (zh) 2014-10-29
CN104119862B true CN104119862B (zh) 2016-03-30

Family

ID=51765506

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410377613.7A Expired - Fee Related CN104119862B (zh) 2014-08-01 2014-08-01 一种具有紫色荧光发射性能的配合物及其制备方法

Country Status (1)

Country Link
CN (1) CN104119862B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106366100B (zh) * 2016-07-27 2018-06-15 宁波大学 一种5-氨基乳清酸双核镉配合物
CN106928259B (zh) * 2017-03-10 2018-07-24 宁波大学 一种青色荧光材料及其制备方法
CN106905246B (zh) * 2017-03-10 2019-04-16 宁波大学 一种橙黄色荧光材料及其制备方法
CN106929007B (zh) * 2017-03-10 2019-01-22 宁波大学 一种青蓝色荧光材料及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102127426A (zh) * 2011-01-11 2011-07-20 宁波大学 一种具有紫色发光性能的荧光材料及其制备方法
CN102241972A (zh) * 2011-05-04 2011-11-16 宁波大学 一种具有紫色发光性能的荧光材料及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334786A (ja) * 2001-03-09 2002-11-22 Sony Corp 有機電界発光素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102127426A (zh) * 2011-01-11 2011-07-20 宁波大学 一种具有紫色发光性能的荧光材料及其制备方法
CN102241972A (zh) * 2011-05-04 2011-11-16 宁波大学 一种具有紫色发光性能的荧光材料及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"新配合物[Cd(H20)z(phen)z](PA)z的制备及晶体结构";李大光等,;《无机化学学报》;20020228;第18卷(第2期);第209-213页 *

Also Published As

Publication number Publication date
CN104119862A (zh) 2014-10-29

Similar Documents

Publication Publication Date Title
Sakthivel et al. Synthesis, luminescence properties and thermal stability of Eu3+-activated Na2Y2B2O7 red phosphors excited by near-UV light for pc-WLEDs
Kang et al. Recent advances and prospects of persistent luminescent materials as inner secondary self-luminous light source for photocatalytic applications
Vijayakumar et al. Energy transfer and color-tunable luminescence properties of Dy3+ and Eu3+ co-doped Na3Sc2 (PO4) 3 phosphors for near-UV LED-based warm white LEDs
Sun et al. Double perovskite Ca2LuTaO6: Eu3+ red-emitting phosphors: synthesis, structure and photoluminescence characteristics
Li et al. Color-tunable luminescence and energy transfer properties of Ca9Mg (PO4) 6F2: Eu2+, Mn2+ phosphors for UV-LEDs
CN102241974B (zh) 一种近蓝色荧光材料及其制备方法
Che et al. Investigation into the surface chemical analysis and luminescent properties of La7O6 (BO3)(PO4) 2: Dy phosphor
Khattab et al. Luminescent plant root: a step toward electricity-free natural lighting plants
Liang et al. Towards control facilities for mimicking plant growth optimum action spectrum: efficient near-ultraviolet to far-red light-conversion in Cr3+-doped rare-earth aluminate phosphors
Fuchs et al. Polyspectral white light emission from Eu3+, Tb3+, Dy3+, Tm3+ co-doped GdAl3 (BO3) 4 phosphors obtained by combustion synthesis
CN104119862B (zh) 一种具有紫色荧光发射性能的配合物及其制备方法
Dong et al. Bismuth activated blue phosphor with high absorption efficiency for white LEDs
Huang et al. A deep-red-emitting Bi3+/Mn4+-doped CaLi6La2Nb2O12 phosphor: Luminescence and energy transfer properties
Gao et al. Tuning the luminescence properties of blue and far‐red dual emitting Gd2MgTiO6: Bi3+, Cr3+ phosphor for LED plant lamp
Wang et al. Crystal structure tailoring and luminescence tuning of Sr1− xBaxAl2Si2O8: Eu2+ phosphors for white-light-emitting diodes
Miao et al. Deep‐red Ca3Al2Ge3O12: Eu3+ garnet phosphor with near‐unity internal quantum efficiency and high thermal stability for plant growth application
An et al. Multichannel control of PersL/upconversion/down-shifting luminescence in a single core–shell nanoparticle for information encryption
CN113913933A (zh) 一种铜基金属卤化物发光单晶的制备及其应用
Zhang et al. Novel bismuth silicate based upconversion phosphors: Facile synthesis, structure, luminescence properties, and applications
Govindan et al. Synthesis and luminescence properties of Ca3Ga4O9: Eu3+: An efficient red-emitter for WLEDs
Liu et al. Synthesis and luminescent properties of Na5 (La, Y)(MoO4) 4: Sm3+ phosphors for solid-state lighting application
Wu et al. Effects of Ce 3+ ions on the photoluminescence properties of Sr 2 SiO 4: Eu 2+ phosphors
CN102127426A (zh) 一种具有紫色发光性能的荧光材料及其制备方法
Schwung et al. KYW2O8: Eu3+–a closer look on its photoluminescence and structure
Sheoran et al. Structural and optoelectronic analysis of Ba5Zn4Gd8O21: Er3+ nanomaterials emitting green light for modern lighting applications

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20190730

Address after: 266300 Room 439, Pioneering Building, No. 1 Changjiang Road, Jiaozhou Economic and Technological Development Zone, Qingdao City, Shandong Province

Patentee after: Qingdao Magic Crystal Photoelectric Co.,Ltd.

Address before: 315211 Zhejiang Province, Ningbo Jiangbei District Fenghua Road No. 818

Patentee before: Ningbo University

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20191209

Address after: 221116 a757, East Fudong road and South Fuzhong Road (Jiayuan building), Tongshan New District, Xuzhou City, Jiangsu Province

Patentee after: Jiangsu Guanggu Biotechnology Research Institute Co.,Ltd.

Address before: 266300 Room 439, Pioneering Building, No. 1 Changjiang Road, Jiaozhou Economic and Technological Development Zone, Qingdao City, Shandong Province

Patentee before: Qingdao Magic Crystal Photoelectric Co.,Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160330

CF01 Termination of patent right due to non-payment of annual fee