CN104112767B - Array base palte, organic LED display panel and display device - Google Patents
Array base palte, organic LED display panel and display device Download PDFInfo
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- CN104112767B CN104112767B CN201410363074.1A CN201410363074A CN104112767B CN 104112767 B CN104112767 B CN 104112767B CN 201410363074 A CN201410363074 A CN 201410363074A CN 104112767 B CN104112767 B CN 104112767B
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- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 22
- 125000006850 spacer group Chemical group 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 107
- 239000000565 sealant Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a kind of array base palte, a kind of organic LED display panel and a kind of display device, wherein, the array base palte includes：Array substrate, structure sheaf, the Organic Light Emitting Diode being laid at the top of structure sheaf layer, it is characterised in that also include：Passivation layer, is covered in the non-light-emitting area of Organic Light Emitting Diode layer and the side of structure sheaf in array base palte.By technical scheme, true color can realized using WOLED, and while overlapping electrode in spacer material mode, it is ensured that display panel has good electric conductivity and block-water performance, and higher panel reliability.
Description
Technical field
The present invention relates to organic light-emitting diode packaging technical field, in particular to a kind of array base palte, Yi Zhongyou
Machine LED display panel and a kind of display device.
Background technology
Organic electroluminescence device has the actively advantageous feature, quilt such as luminous, visual angle wide, contrast is high, fast response time
It is described as the Display Technique of a new generation.
Organic Light Emitting Diode (i.e. OLED) display true color can add COA (Color-filter using WOLED
On Array, colored filter is integrated with array base palte) or CF (Color-filter colored filters) mode realize, specifically
The mode that bottom emitting WOLED adds CF plus COA mode and top emitting WOLED can be included.Wherein added with top emitting WOLED
Upper CF mode has the advantages that high aperture and backboard processing procedure are simpler.
But top emitting WOLED adds CF mode because Top electrode is penetration electrode, either with thin metal or TCO
(Transparent Conductive Oxide, transparent conductive oxide film), has because sheet resistance values are excessive, causes to make
During large-area OLEDs display, easily produce IR Drop (resistance drop) and make panel luminosity uneven, although can will be auxiliary
Help electrode to be made on CF cover plates, Top electrode is overlapped on to reduce IR Drop, still using Photo Spacer (spacer material) mode
In order to reach good electrical overlap joint, just there can not be insulating barrier between Top electrode and PS, so as to cause blocking water for display panel
Property be deteriorated, causing the reliability of panel reduces.
The content of the invention
The technical problems to be solved by the invention are how to ensure the water preventing ability of array base palte, closer, how
While upper electrode layer being overlapped using spacer material mode, it is ensured that the block-water performance of the display panel with array base palte and trust
Degree.
For this purpose, the present invention proposes a kind of array base palte, including：Array substrate, structure sheaf, it is laid in the structure
Organic Light Emitting Diode layer at the top of layer, in addition to：Passivation layer, is covered in Organic Light Emitting Diode layer in the array base palte
Non-light-emitting area and the side of the structure sheaf.
Preferably, chip on film area or soft board weld zone are provided with the outside of the array substrate, the passivation layer is set
Between the Organic Light Emitting Diode floor and the chip on film area or the soft board weld zone.
Preferably, the passivation layer is single layer structure or multilayer lamination structure.
Preferably, the passivation layer is silicon nitride, silica, aluminum oxide and/or titanium oxide.
The invention also provides a kind of organic LED display panel, including array base palte described in any of the above-described,
Upper electrode layer, in addition to color membrane substrates are formed with the Organic Light Emitting Diode layer of the array base palte, wherein, the color film base
Plate includes colour film substrate, and colour film substrate is formed with color film layer, color film layer towards the one side of array base palte and is formed with auxiliary electrode
The auxiliary electrode layer being formed with spacer material or the color film layer at the top of spacer material, spacer material is formed with layer, auxiliary electrode layer
Contact the upper electrode layer.
Preferably, between the color membrane substrates and the array base palte be filled with the first sealant, the passivation layer by layer by
The first sealant sealing.
Preferably, in addition to：Second sealant, is arranged at the first sealant periphery, close for sealing described first
Seal agent.
Preferably, the viscosity of first sealant is less than the viscosity of second sealant.
Preferably, in addition to：Metal routing, is arranged at the spacer material bottom, and be in contact with the auxiliary electrode layer.
Preferably, the metal routing is the metal or metal alloy such as aluminium, molybdenum or silver.
Preferably, the auxiliary electrode layer is transparent conductive film.
Preferably, the upper electrode layer includes following at least one：Silver layer, magnesium ag alloy layer, indium tin oxide layer, indium oxide
Composite bed covered with transparent conductive film in zinc layers, metal level.
The invention also provides a kind of display device, including the organic light-emitting diode display face described in any of the above-described
Plate.
By above-mentioned technical proposal, set on array base palte the non-light-emitting area that is covered in Organic Light Emitting Diode layer and
The passivation layer of the side of structure sheaf, can realize true color, and overlap the same of upper electrode layer in spacer material mode using WOLED
When, it is ensured that array base palte and the display panel with array base palte have good electric conductivity and block-water performance, and higher
Panel reliability.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood from by reference to accompanying drawing, accompanying drawing is schematical without that should manage
Solve to carry out any limitation to the present invention, in the accompanying drawings：
Fig. 1 shows the structural representation of array base palte according to an embodiment of the invention；
Fig. 2 shows passivation layer position view according to an embodiment of the invention；
Fig. 3 A show the structural representation of organic LED display panel according to an embodiment of the invention；
Fig. 3 B show the structural representation of organic LED display panel according to another embodiment of the present invention；
Fig. 4 shows the structural representation of organic LED display panel in accordance with another embodiment of the present invention.
Drawing reference numeral explanation：
1- structure sheafs；10- array substrates；2- colour film substrates；20- coloured silk film layers；3- passivation layers；4- spacer materials；5- auxiliary electricity
Pole layer；6- Organic Light Emitting Diodes layer；7- metal routings；8- chip on film area or soft board weld zone；9- Anisotropically conductive glued membranes.
Embodiment
The above objects, features and advantages of the present invention can be more clearly understood that, below in conjunction with the accompanying drawings and specific implementation
The present invention is further described in detail mode.It should be noted that in the case where not conflicting, embodiments herein
And the feature in embodiment can be mutually combined.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also
Implemented with being different from other modes described here using other, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
Fig. 1 shows the structural representation of array base palte according to an embodiment of the invention.
As shown in figure 1, array base palte according to an embodiment of the invention includes：Array substrate 10, structure sheaf 1, laying
Organic Light Emitting Diode layer 6 in the top of structure sheaf 1, in addition to：Passivation layer 3, is covered in organic light-emitting diodes in array base palte
The non-light-emitting area of tube layer 6, and structure sheaf 1 side.
It should be noted that the first sealant is filled between array base palte and color membrane substrates, and array base palte is included
Array substrate 10, structure sheaf 1 and Organic Light Emitting Diode layer 6, wherein structure sheaf 1 is not single one layer, but for reality
The set of each layer of existing array base palte function, can include as needed：Grid, gate insulator, active layer, etch stopper
Multiple layers such as layer, source-drain layer, resin insulating barrier, pixel electrode layer (pixel electrode layer can be used as anode), pixel defining layer, but
It is not limited to this.And passivation layer 3 is then covered in the non-luminous region of Organic Light Emitting Diode layer 6, i.e. Organic Light Emitting Diode layer 6
Edge, while covered structure layer 1 two sides.
By covering passivation layer 3, Ke Yibao in the side of the non-light-emitting area of Organic Light Emitting Diode layer 6 and structure sheaf 1
Card is realizing true color using WOLED, and while overlapping upper electrode layer in the way of spacer material 4, reduces from sealing structure side
The moisture that side is penetrated into, so as to ensure that the display panel being made up of the array base palte has good block-water performance and higher face
Plate reliability.
(wherein only depict chip on film area or the soft board weld zone 8 of the side of array substrate 10, array base as shown in Figure 2
The opposite side at bottom 10 can also be provided with chip on film area or soft board weld zone 8), it is preferable that the outside of array substrate 10 is set
There are chip on film area (COF) or soft board weld zone (FPC) 8, be laid on Anisotropically conductive glued membrane 9 (i.e. ACF), then passivation layer 3
It is arranged between the luminous zone of Organic Light Emitting Diode floor 6 and chip on film area or soft board weld zone 8.
Because passivation layer 3 be in Organic Light Emitting Diode floor 6 luminous zone and chip on film area or soft board weld zone 8 it
Between, it is ensured that passivation layer 3 is in the first sealant, and does not cover the luminous zone of organic LED layers 6.
Preferably, passivation layer 3 is single layer structure or multilayer lamination structure.
Preferably, passivation layer 3 is silicon nitride, silica, aluminum oxide and/or titanium oxide.
As shown in Figure 3 A and Figure 3 B, organic LED display panel according to an embodiment of the invention includes above-mentioned
Upper electrode layer is formed with array base palte in any one, the Organic Light Emitting Diode layer 6 of array base palte (to be not drawn into, have in figure
Body is one layer of Thin electrode layers for being laid in 6 upper surface of array Organic Light Emitting Diode layer), in addition to color membrane substrates, wherein, color film
Substrate includes colour film substrate 2, and colour film substrate 2 is formed with color film layer 20, color film layer 20 towards the one side of array base palte and is formed with
It is formed with auxiliary electrode layer 5, auxiliary electrode layer 5 on spacer material 4 (as shown in Figure 3A), or color film layer 20 and is formed with spacer material 4
(as shown in Figure 3 B), the upper electrode layer of the contact array substrate of auxiliary electrode layer 5 at the top of spacer material 4.
Preferably, the first sealant is filled between colour film substrate 2 and array base palte, passivation layer 3 is close by the first sealant
Envelope.
Preferably, in addition to：Second sealant, is arranged at the first sealant periphery, for sealing the first sealant.
Preferably, the viscosity of the first sealant is less than the viscosity of the second sealant.
First sealant is set on the outside of the first sealant, the sealing property of display panel can be further ensured, and
The surface evenness of the first sealant can be improved, and because the first sealant directly contacts Organic Light Emitting Diode layer 6,
In solidification process, damage can be caused to Organic Light Emitting Diode layer 6 due to the tension force of contact surface, pass through gluing the first sealant
Degree is set smaller than the viscosity of the second sealant, it is ensured that the first sealant and Organic Light Emitting Diode layer 6 in solidification process
Contact surface only there is less tension force, reduce the damage of Organic Light Emitting Diode layer 6, meanwhile, the second sealant is using larger
Viscosity, it is ensured that to external world with stronger water preventing ability, improve overall sealing performance.
As shown in figure 4, the structure for Fig. 3 A with the addition of metal routing 7, it is preferable that organic LED display panel
It can also include：Metal routing 7, is arranged at the bottom of spacer material 4, and be in contact with auxiliary electrode layer 5.
Preferably, metal routing 7 is made up of metal or metal alloy such as aluminium, molybdenum or silver.
By setting metal routing 7 in the bottom of spacer material 4, the electric conductivity of auxiliary electrode layer 5 can be increased, and reduction has
The positive IR drop of machine LED display panel.
Auxiliary electrode layer 5 is transparent conductive film, can be by the oxide of the metals such as In, Sn, Zn and Cd and its compound many
First oxide film material is made, such as ITO (tin indium oxide) or IZO (indium zinc oxide).
Preferably, upper electrode layer includes following at least one：Silver layer, magnesium ag alloy layer, indium tin oxide layer, indium zinc oxide
Composite bed covered with transparent conductive film on layer, metal level.
The invention also provides the organic LED display panel of a kind of display device, including any of the above-described.
The display device of the embodiment of the present invention for example can be：Electronic Paper, mobile phone, tablet personal computer, television set, display,
Any product or part with display function such as notebook computer, DPF, navigator.
Technical scheme is described in detail above in association with accompanying drawing, it is contemplated that in correlation technique, is using spacer material
When mode overlaps electrode, it is difficult to ensure the block-water performance of display panel and the reliability of panel.By the technical scheme of the application,
True color can realized using WOLED, and while overlapping electrode in spacer material mode, it is ensured that having for display panel is good
Electric conductivity and block-water performance, and higher panel reliability.
In addition, it will be recognized by those skilled in the art that according to actual needs, organic light-emitting diode display face of the invention
Plate can also include other structures and part, and organic LED display panel manufacture method can also include other steps
Rapid and details, simply the improvements with the present invention are unrelated, will not be repeated here.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (11)
1. a kind of array base palte, including：Array substrate, structure sheaf and the Organic Light Emitting Diode being laid at the top of the structure sheaf
Layer, it is characterised in that also include：
Passivation layer, is covered in the non-light-emitting area of Organic Light Emitting Diode layer and the side of the structure sheaf in the array base palte
Face；
The chip on film area being laid on Anisotropically conductive glued membrane or soft board weld zone, institute are provided with the outside of the array substrate
State passivation layer be arranged at the Organic Light Emitting Diode floor luminous zone and the chip on film area or the soft board weld zone it
Between.
2. array base palte according to claim 1, it is characterised in that the passivation layer is single layer structure or multiple-level stack knot
Structure.
3. array base palte according to claim 1, it is characterised in that the passivation layer is silicon nitride, silica, aluminum oxide
And/or titanium oxide.
4. a kind of organic LED display panel, it is characterised in that including array any one of claims 1 to 3
Upper electrode layer, in addition to color membrane substrates are formed with substrate, the Organic Light Emitting Diode layer of the array base palte,
Wherein, the color membrane substrates include colour film substrate, and the colour film substrate is formed with coloured silk towards the one side of the array base palte
It is formed with auxiliary electrode layer, the auxiliary electrode layer and is formed with spacer material or the color film layer in film layer, the color film layer
It is formed with the auxiliary electrode layer at the top of spacer material, the spacer material and contacts the upper electrode layer.
5. organic LED display panel according to claim 4, it is characterised in that the color membrane substrates and the battle array
The first sealant is filled between row substrate, the passivation layer is sealed by first sealant.
6. organic LED display panel according to claim 5, it is characterised in that also include：
Second sealant, is arranged at the first sealant periphery, for sealing first sealant.
7. organic LED display panel according to claim 6, it is characterised in that the viscosity of first sealant
Less than the viscosity of second sealant.
8. organic LED display panel according to claim 4, it is characterised in that also include：
Metal routing, is arranged at the spacer material bottom, and be in contact with the auxiliary electrode layer.
9. the organic LED display panel according to any one of claim 4 to 8, it is characterised in that the auxiliary
Electrode layer is transparent conductive film.
10. the organic LED display panel according to any one of claim 4 to 8, it is characterised in that the upper electricity
Pole layer includes following at least one：
Silver layer, magnesium ag alloy layer, indium tin oxide layer, IZO layer, the composite bed covered with transparent conductive film on metal level.
11. a kind of display device, it is characterised in that including the Organic Light Emitting Diode any one of claim 4 to 10
Display panel.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410363074.1A CN104112767B (en) | 2014-07-28 | 2014-07-28 | Array base palte, organic LED display panel and display device |
| PCT/CN2014/092521 WO2016015421A1 (en) | 2014-07-28 | 2014-11-28 | Array substrate, organic light-emitting diode display panel and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410363074.1A CN104112767B (en) | 2014-07-28 | 2014-07-28 | Array base palte, organic LED display panel and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104112767A CN104112767A (en) | 2014-10-22 |
| CN104112767B true CN104112767B (en) | 2017-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410363074.1A Active CN104112767B (en) | 2014-07-28 | 2014-07-28 | Array base palte, organic LED display panel and display device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104112767B (en) |
| WO (1) | WO2016015421A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112767B (en) * | 2014-07-28 | 2017-09-19 | 京东方科技集团股份有限公司 | Array base palte, organic LED display panel and display device |
| CN104821329A (en) * | 2015-05-04 | 2015-08-05 | 深圳市华星光电技术有限公司 | Oled display device |
| CN106298839A (en) * | 2015-06-03 | 2017-01-04 | 上海和辉光电有限公司 | Display device and display floater thereof |
| CN106228931A (en) * | 2016-09-23 | 2016-12-14 | 深圳市国显科技有限公司 | A kind of Novel OLED display and processing technology thereof |
| CN107293573A (en) * | 2017-07-06 | 2017-10-24 | 京东方科技集团股份有限公司 | Oled substrate and OLED display |
| CN107316951B (en) * | 2017-08-16 | 2019-01-29 | 京东方科技集团股份有限公司 | Package substrate and preparation method thereof, OLED display panel and preparation method thereof |
| US10566568B2 (en) | 2017-08-29 | 2020-02-18 | Boe Technology Group Co., Ltd. | Organic light emitting diode display substrate, organic light emitting diode display apparatus, and method of fabricating organic light emitting diode display substrate |
| CN107565056B (en) * | 2017-08-29 | 2019-11-01 | 京东方科技集团股份有限公司 | A kind of package substrate, OLED display panel and its packaging method |
| CN107579168B (en) * | 2017-08-31 | 2023-11-03 | 京东方科技集团股份有限公司 | Color film substrate, preparation method thereof, display panel and packaging method |
| CN109923675B (en) * | 2017-09-26 | 2024-04-05 | 京东方科技集团股份有限公司 | Organic light emitting diode display substrate, organic light emitting diode display device, and method of manufacturing organic light emitting diode display substrate |
| CN108074962A (en) * | 2018-02-11 | 2018-05-25 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel, display device |
| CN109581725A (en) * | 2018-12-18 | 2019-04-05 | 深圳市华星光电半导体显示技术有限公司 | Color membrane substrates and display panel |
| CN110112311B (en) * | 2019-05-10 | 2020-10-27 | 武汉华星光电半导体显示技术有限公司 | Display panel and display module |
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| CN103715231A (en) * | 2013-12-31 | 2014-04-09 | 京东方科技集团股份有限公司 | Organic light emitting display panel and display device |
| CN103744238A (en) * | 2013-12-10 | 2014-04-23 | 京东方科技集团股份有限公司 | Array substrate and display device |
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| US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
| KR101028277B1 (en) * | 2010-05-25 | 2011-04-11 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting unit |
| KR101125025B1 (en) * | 2010-07-23 | 2012-03-27 | 엘지이노텍 주식회사 | Light emitting device and method for manufacturing the same |
| KR101114191B1 (en) * | 2010-09-17 | 2012-03-13 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device |
| CN103545345B (en) * | 2013-11-11 | 2016-09-21 | 京东方科技集团股份有限公司 | A kind of display floater and preparation method thereof, display device |
| CN104112767B (en) * | 2014-07-28 | 2017-09-19 | 京东方科技集团股份有限公司 | Array base palte, organic LED display panel and display device |
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| CN103744238A (en) * | 2013-12-10 | 2014-04-23 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN103715231A (en) * | 2013-12-31 | 2014-04-09 | 京东方科技集团股份有限公司 | Organic light emitting display panel and display device |
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