CN104112767A - Array substrate, organic light emitting diode (LED) display panel and display device - Google Patents
Array substrate, organic light emitting diode (LED) display panel and display device Download PDFInfo
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- CN104112767A CN104112767A CN201410363074.1A CN201410363074A CN104112767A CN 104112767 A CN104112767 A CN 104112767A CN 201410363074 A CN201410363074 A CN 201410363074A CN 104112767 A CN104112767 A CN 104112767A
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- base palte
- array base
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- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 99
- 239000000565 sealant Substances 0.000 claims description 31
- 239000012212 insulator Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 4
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
Abstract
The invention relates to an array substrate, an organic light emitting diode (LED) display panel and a display device. The array substrate comprises an array base, a structure layer, and an organic LED layer that is arranged on the top part of the structure layer. The array substrate is characterized by further comprising a passivation layer, a non-luminous area that covers the organic LED layer in the array substrate, and a side surface of the structure layer. According to the technical scheme, the array substrate has the advantages that full color can be realized through WOLED (White Organic Light-Emitting Diode); an electrode is lapped by means of spacer, and thus the display panel is outstanding in conductivity and water resistance, and high in panel reliability.
Description
Technical field
The present invention relates to organic light-emitting diode packaging technical field, in particular to a kind of array base palte, a kind of organic LED display panel and a kind of display unit.
Background technology
The advantageous feature such as organic electroluminescence device has active illuminating, visual angle is wide, contrast is high, fast response time, are described as Display Technique of new generation.
Organic Light Emitting Diode (being OLED) display true color can utilize WOLED to add COA (Color-filter on Array, colored filter and array base palte are integrated) or the mode of CF (Color-filter colored filter) realize, specifically can comprise that transmitting WOLED in the end adds the mode of COA and the mode that top transmitting WOLED adds CF.Wherein with top transmitting WOLED, add the advantages such as the mode of CF has high aperture and backboard processing procedure is simpler and easy.
But the mode that top transmitting WOLED adds CF is due to the very penetration electrode that powers on, no matter be with thin metal or TCO is (Transparent Conductive Oxide, transparent conductive oxide film), all have because of sheet resistor value excessive, while causing making large-area OLEDs display, easily produce IR Drop (resistance drop) and make panel luminosity uneven, although auxiliary electrode can be made on CF cover plate, utilize Photo Spacer (chock insulator matter) mode to be overlapped on top electrode to reduce IR Drop, but in order to reach good electrical overlap joint, between top electrode and PS, just can not there is insulating barrier, thereby the water preventing ability variation that causes display floater, cause the reliability of panel to reduce.
Summary of the invention
Technical problem to be solved by this invention is, how to guarantee the water preventing ability of array base palte, closer, how when adopting chock insulator matter mode to overlap upper electrode layer, guarantees to have block-water performance and the reliability of the display floater of array base palte.
For this purpose, the present invention proposes a kind of array base palte, comprise: array substrate, structure sheaf, be laid in the Organic Light Emitting Diode layer at described structure sheaf top, also comprise: passivation layer, is covered in the non-light-emitting area of Organic Light Emitting Diode layer and the side of described structure sheaf in described array base palte.
Preferably, the arranged outside of described array substrate has covers brilliant thin film region or soft board weld zone, described passivation layer be arranged at described Organic Light Emitting Diode layer and described in cover between brilliant thin film region or described soft board weld zone.
Preferably, described passivation layer is single layer structure or multiple-level stack structure.
Preferably, described passivation layer is silicon nitride, silica, aluminium oxide and/or titanium oxide.
The invention allows for a kind of organic LED display panel, comprise array base palte described in above-mentioned any one, on the Organic Light Emitting Diode layer of described array base palte, be formed with upper electrode layer, also comprise color membrane substrates, wherein, described color membrane substrates comprises color film substrate, color film basal surface is formed with color rete to the one side of array base palte, on color rete, be formed with auxiliary electrode layer, in auxiliary electrode layer, be formed with on chock insulator matter or described color rete and be formed with chock insulator matter, the auxiliary electrode layer at chock insulator matter top contacts described upper electrode layer.
Preferably, between described color membrane substrates and described array base palte, be filled with the first sealant, described passivation is sealed by described the first sealant layer by layer.
Preferably, also comprise: the second sealant, is arranged at described the first sealant peripheral, for sealing described the first sealant.
Preferably, the viscosity of described the first sealant is less than the viscosity of described the second sealant.
Preferably, also comprise: metal routing, is arranged at described chock insulator matter bottom, and contacts with described auxiliary electrode layer.
Preferably, described metal routing is the metal or metal alloy such as aluminium, molybdenum or silver.
Preferably, described auxiliary electrode layer is transparent conductive film.
Preferably, described upper electrode layer comprise following at least one: the composite bed that is coated with transparent conductive film on silver layer, magnesium ag alloy layer, indium tin oxide layer, indium zinc oxide layer, metal level.
The invention allows for a kind of display unit, comprise the organic LED display panel described in above-mentioned any one.
Pass through technique scheme, the passivation layer that is covered in the non-light-emitting area of Organic Light Emitting Diode layer and the side of structure sheaf is set on array base palte, can adopt WOLED to realize true color, and when overlapping upper electrode layer in chock insulator matter mode, guarantee that array base palte and the display floater with array base palte have good electric conductivity and block-water performance, and higher panel reliability.
Accompanying drawing explanation
By reference to accompanying drawing, can more clearly understand the features and advantages of the present invention, accompanying drawing is schematically to should not be construed as the present invention is carried out to any restriction, in the accompanying drawings:
Fig. 1 shows the structural representation of array base palte according to an embodiment of the invention;
Fig. 2 shows passivation layer position view according to an embodiment of the invention;
Fig. 3 A shows the structural representation of organic LED display panel according to an embodiment of the invention;
Fig. 3 B shows the structural representation of organic LED display panel according to another embodiment of the present invention;
Fig. 4 shows the structural representation of organic LED display panel in accordance with another embodiment of the present invention.
Drawing reference numeral explanation:
1-structure sheaf; 10-array substrate; The color film substrate of 2-; The color rete of 20-; 3-passivation layer; 4-chock insulator matter; 5-auxiliary electrode layer; 6-Organic Light Emitting Diode layer; 7-metal routing; 8-covers brilliant thin film region or soft board weld zone; 9-Anisotropically conductive glued membrane.
Embodiment
Can more clearly understand above-mentioned purpose of the present invention, feature and advantage, below in conjunction with the drawings and specific embodiments, the present invention is further described in detail.It should be noted that, in the situation that not conflicting, the application's embodiment and the feature in embodiment can combine mutually.
A lot of details have been set forth in the following description so that fully understand the present invention; but; the present invention can also adopt other to be different from other modes described here and implement, and therefore, protection scope of the present invention is not subject to the restriction of following public specific embodiment.
Fig. 1 shows the structural representation of array base palte according to an embodiment of the invention.
As shown in Figure 1, array base palte comprises according to an embodiment of the invention: array substrate 10, structure sheaf 1, be laid in the Organic Light Emitting Diode layer 6 at structure sheaf 1 top, also comprise: passivation layer 3, be covered in the non-light-emitting area of Organic Light Emitting Diode layer 6 in array base palte, and the side of structure sheaf 1.
It should be noted that, between array base palte and color membrane substrates, be full of the first sealant, and array base palte comprises array substrate 10, structure sheaf 1 and Organic Light Emitting Diode layer 6, wherein structure sheaf 1 is not single one deck, but in order to realize the set of each layer of array base palte function, can comprise as required: grid, gate insulator, active layer, etching barrier layer, source-drain layer, resin insulating barrier, pixel electrode layer (pixel electrode layer can be used as anode), pixel define a plurality of layers such as layer, but are not limited to this.Passivation layer 3 is covered in the non-luminous region of Organic Light Emitting Diode layer 6, i.e. the edge of Organic Light Emitting Diode layer 6, simultaneously two sides of covered structure layer 1.
Side by the non-light-emitting area at Organic Light Emitting Diode layer 6 and structure sheaf 1 covers passivation layer 3, can guarantee adopting WOLED to realize true color, and when overlapping upper electrode layer in the mode of chock insulator matter 4, the moisture that reduction is infiltrated from hermetically-sealed construction side, thus guarantee that the display floater consisting of this array base palte has good block-water performance and higher panel reliability.
(what wherein only drawn array substrate 10 1 sides covers brilliant thin film region or soft board weld zone 8 as shown in Figure 2, the opposite side of array substrate 10 also can be provided with and cover brilliant thin film region or soft board weld zone 8), preferably, the arranged outside of array substrate 10 has covers brilliant thin film region (COF) or soft board weld zone (FPC) 8, be laid on Anisotropically conductive glued membrane 9 (being ACF), passivation layer 3 is arranged between the He Fujing thin film region, luminous zone or soft board weld zone 8 of Organic Light Emitting Diode layer 6.
Because passivation layer 3 between He Fujing thin film region, the luminous zone of Organic Light Emitting Diode layer 6 or soft board weld zone 8, can guarantee that passivation layer 3 is in the first sealant, and be not coated with the luminous zone of OLED layer 6.
Preferably, passivation layer 3 is single layer structure or multiple-level stack structure.
Preferably, passivation layer 3 is silicon nitride, silica, aluminium oxide and/or titanium oxide.
As shown in Figure 3 A and Figure 3 B, organic LED display panel comprises the array base palte in above-mentioned any one according to an embodiment of the invention, on the Organic Light Emitting Diode layer 6 of array base palte, be formed with upper electrode layer (not shown in FIG., be specially one deck Thin electrode layers that is laid in array Organic Light Emitting Diode layer 6 upper surface), also comprise color membrane substrates, wherein, color membrane substrates comprises color film substrate 2, color film substrate 2 is formed with color rete 20 towards the one side of array base palte, on color rete 20, be formed with auxiliary electrode layer 5, in auxiliary electrode layer 5, be formed with chock insulator matter 4 (as shown in Figure 3A), or on color rete 20, be formed with chock insulator matter 4 (as shown in Figure 3 B), the upper electrode layer of the auxiliary electrode layer 5 contact array substrates at chock insulator matter 4 tops.
Preferably, between color film substrate 2 and array base palte, be filled with the first sealant, passivation layer 3 is sealed by the first sealant.
Preferably, also comprise: the second sealant, is arranged at the first sealant peripheral, for sealing the first sealant.
Preferably, the viscosity of the first sealant is less than the viscosity of the second sealant.
At first sealant arranged outside the first sealant, can further ensure the sealing property of display floater, and can improve the surface evenness of the first sealant, and because the first sealant directly contacts Organic Light Emitting Diode layer 6, in solidification process, can to Organic Light Emitting Diode layer 6, cause damage due to the tension force of contact-making surface, by the viscosity of the first sealant, be set to be less than the viscosity of the second sealant, can guarantee that in solidification process, the contact-making surface of the first sealant and Organic Light Emitting Diode layer 6 only has less tension force, reduce the damage of Organic Light Emitting Diode layer 6, simultaneously, the second sealant adopts larger viscosity, can guarantee to there is to external world stronger water preventing ability, improve overall sealing performance.
As shown in Figure 4, for the structure of Fig. 3 A, added metal routing 7, preferably, organic LED display panel can also comprise: metal routing 7, is arranged at chock insulator matter 4 bottoms, and contacts with auxiliary electrode layer 5.
Preferably, metal routing 7 is that the metal or metal alloy such as aluminium, molybdenum or silver are made.
By the bottom at chock insulator matter 4, metal routing 7 is set, can increases the conductivity of auxiliary electrode layer 5, and reduce the IR drop in organic LED display panel front.
Auxiliary electrode layer 5 is transparent conductive film, can be made by oxide and the composite multi-component oxide film material thereof of the metals such as In, Sn, Zn and Cd, for example ITO (tin indium oxide) or IZO (indium zinc oxide).
Preferably, upper electrode layer comprise following at least one: the composite bed that is coated with transparent conductive film on silver layer, magnesium ag alloy layer, indium tin oxide layer, indium zinc oxide layer, metal level.
The invention allows for a kind of display unit, comprise the organic LED display panel of above-mentioned any one.
The display unit of the embodiment of the present invention is such as being: any product or parts with Presentation Function such as Electronic Paper, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
More than be described with reference to the accompanying drawings technical scheme of the present invention, considered in correlation technique, when adopting chock insulator matter mode to overlap electrode, be difficult to guarantee the reliability of block-water performance and the panel of display floater.By the application's technical scheme, can adopt WOLED realize true color, and when overlapping electrode in chock insulator matter mode, what guarantee display floater has good electric conductivity and block-water performance and a higher panel reliability.
In addition, those skilled in the art will be appreciated that, according to actual needs, organic LED display panel of the present invention can also comprise other structure and parts, organic LED display panel manufacture method can also comprise other step and details, just irrelevant with improvements of the present invention, do not repeat them here.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (12)
1. an array base palte, comprising: array substrate, structure sheaf and be laid in the Organic Light Emitting Diode layer at described structure sheaf top, it is characterized in that, and also comprise:
Passivation layer, is covered in the non-light-emitting area of Organic Light Emitting Diode layer and the side of described structure sheaf in described array base palte.
2. array base palte according to claim 1, it is characterized in that, the arranged outside of described array substrate has covers brilliant thin film region or soft board weld zone, described passivation layer be arranged at described Organic Light Emitting Diode layer luminous zone and described in cover between brilliant thin film region or described soft board weld zone.
3. according to array base palte described in claim 1 or 2, it is characterized in that, described passivation layer is single layer structure or multiple-level stack structure.
4. according to array base palte described in claim 1 or 2, it is characterized in that, described passivation layer is silicon nitride, silica, aluminium oxide and/or titanium oxide.
5. an organic LED display panel, is characterized in that, comprises in claim 1 to 4 array base palte described in any one, on the Organic Light Emitting Diode layer of described array base palte, is formed with upper electrode layer, also comprises color membrane substrates,
Wherein, described color membrane substrates comprises color film substrate, described color film basal surface is formed with color rete to the one side of described array base palte, on described color rete, be formed with auxiliary electrode layer, in described auxiliary electrode layer, be formed with on chock insulator matter or described color rete and be formed with chock insulator matter, the auxiliary electrode layer at described chock insulator matter top contacts described upper electrode layer.
6. organic LED display panel according to claim 5, is characterized in that, between described color membrane substrates and described array base palte, be filled with the first sealant, described passivation layer is sealed by described the first sealant.
7. organic LED display panel according to claim 5, is characterized in that, also comprises:
The second sealant, is arranged at described the first sealant peripheral, for sealing described the first sealant.
8. organic LED display panel according to claim 7, is characterized in that, the viscosity of described the first sealant is less than the viscosity of described the second sealant.
9. organic LED display panel according to claim 5, is characterized in that, also comprises:
Metal routing, is arranged at described chock insulator matter bottom, and contacts with described auxiliary electrode layer.
10. according to organic LED display panel described in any one in claim 5 to 9, it is characterized in that, described auxiliary electrode layer is transparent conductive film.
11. according to organic LED display panel described in any one in claim 5 to 9, it is characterized in that, described upper electrode layer comprise following at least one:
On silver layer, magnesium ag alloy layer, indium tin oxide layer, indium zinc oxide layer, metal level, be coated with the composite bed of transparent conductive film.
12. 1 kinds of display unit, is characterized in that, comprise the organic LED display panel described in any one in claim 5 to 11.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410363074.1A CN104112767B (en) | 2014-07-28 | 2014-07-28 | Array base palte, organic LED display panel and display device |
| PCT/CN2014/092521 WO2016015421A1 (en) | 2014-07-28 | 2014-11-28 | Array substrate, organic light-emitting diode display panel and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410363074.1A CN104112767B (en) | 2014-07-28 | 2014-07-28 | Array base palte, organic LED display panel and display device |
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| Publication Number | Publication Date |
|---|---|
| CN104112767A true CN104112767A (en) | 2014-10-22 |
| CN104112767B CN104112767B (en) | 2017-09-19 |
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| CN201410363074.1A Active CN104112767B (en) | 2014-07-28 | 2014-07-28 | Array base palte, organic LED display panel and display device |
Country Status (2)
| Country | Link |
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| CN (1) | CN104112767B (en) |
| WO (1) | WO2016015421A1 (en) |
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| WO2016015421A1 (en) * | 2014-07-28 | 2016-02-04 | 京东方科技集团股份有限公司 | Array substrate, organic light-emitting diode display panel and display apparatus |
| WO2016176876A1 (en) * | 2015-05-04 | 2016-11-10 | 深圳市华星光电技术有限公司 | Oled display device |
| CN106298839A (en) * | 2015-06-03 | 2017-01-04 | 上海和辉光电有限公司 | Display device and display floater thereof |
| CN107293573A (en) * | 2017-07-06 | 2017-10-24 | 京东方科技集团股份有限公司 | Oled substrate and OLED display |
| CN107316951A (en) * | 2017-08-16 | 2017-11-03 | 京东方科技集团股份有限公司 | Package substrate and preparation method thereof, OLED display panel and preparation method thereof |
| CN107565056A (en) * | 2017-08-29 | 2018-01-09 | 京东方科技集团股份有限公司 | A kind of package substrate, OLED display panel and its method for packing |
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| CN109923675A (en) * | 2017-09-26 | 2019-06-21 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate, organic light-emitting diode (OLED) display apparatus and the method for manufacturing organic light-emitting diode display substrate |
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| KR101114191B1 (en) * | 2010-09-17 | 2012-03-13 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device |
| CN103545345B (en) * | 2013-11-11 | 2016-09-21 | 京东方科技集团股份有限公司 | A kind of display floater and preparation method thereof, display device |
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2014
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| WO2016015421A1 (en) | 2016-02-04 |
| CN104112767B (en) | 2017-09-19 |
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