CN104103723A - 氮化镓发光二极管及其制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract description 15
- 229910002601 GaN Inorganic materials 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 11
- 230000001788 irregular Effects 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 7
- 239000002245 particle Substances 0.000 claims 4
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000274 aluminium melt Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
本发明提供一种氮化物发光二极管,包括衬底、缓冲层、N型层、活性层以及P型层,其特征在于:提供低三甲基铝的缓冲层,能有效地提高发光二极管的发光效率。
Description
技术领域
本发明涉及氮化物半导体光电组件,尤其涉及一种具有改善缓冲层结构的氮化物半导体光电器件。
背景技术
发光二极管(Light-emitting diode,LED)在节能,环保和寿命长方面的优势,所以受到广泛关注。特别是基于氮化镓材料的LED,由于其波长范围理论上覆盖了整个可见光波段和紫外波段,因此成为目前LED发展的主流方向。氮化镓材料蓝光LED技术无论在研究上和商业化生产应用上都取得了进步,其应用领域广阔。但目前LED的发光效率相对较低,从外延结构而言,除了提升内部量子效率(IQE:Internal Quantum
Efficiency)之外,改善外部量子效率(EQE:External Quantum Efficiency)也是重要的课题。
这些LED组件,具有在蓝宝石衬底上形成氮化物缓冲层,由Si掺杂GaN的N型接触层,由具有InGaN的多层量子井结构(MQW:Multi-Quantum-Well)活性层,由Mg掺杂的P型氮化物接触层依次迭层而形成的结构,这种结构具有较高亮度的半导体组件特性。
发明内容
针对现有技术,为了有效地提高发光二极管的发光效率,本发明提供一种氮化镓发光二极管及其制作方法,其主要方案包括:提供三甲基铝成长的缓冲层结构,利用三甲基铝熔点较低的特性,升温至660℃以上可通入氨气,由于在达到660℃温度前不通氨气,只通入三甲基铝源,记此温度为T1,让三甲基铝熔解形成不规则的形状,使发光二极管可通过缓冲层的不规则铝金属产生反射与折射效应,以提高外部量子效率。
为了达到上述目的,此结构包括缓冲层、N型层、应力释放层、活性层以及P型层,此金属铝缓冲层厚度(a)的范围为5Å≦a≦300Å。
本发明的缓冲层下的衬底可选用氧化铝单晶(Sapphire)或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN衬底。
本发明的缓冲层的成长温度(b)的范围为200℃≦b≦1000℃,其中温度T1小于或等于660℃,更优地,所述温度T1为200℃~660℃。
本发明的缓冲层成长后需要升温高于三甲基铝的熔点660℃,记此温度为T2(T2>T1),再接着进行氮化物结构成长,可通过三甲基铝的有机金属气相沉积形成薄膜或利用电子束蒸镀铝金属形成薄膜。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1为本发明之实施例1之氮化镓发光二极管剖视图。
图中标示:1.衬底;2.缓冲层;3.N型层;4.应力释放层;5.多量子阱有源区(活性层);6. P型层。
具体实施方式
下面结合附图和实施例对本发明的具体实施方式进行详细说明。
实施例
1
请参看附图1,在衬底1上生长缓冲层2,然后在缓冲层2上生长N型层3,再在N型层3上生长应力释放层4,接着在应力释放层4上生长多量子阱有源区(活性层)5,然后在多量子阱有源区5上生长P型层6。衬底1的材质可选用氧化铝单晶(Sapphire)或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN衬底,但不以此为限。晶格常数(lattice constant)接近于氮化物半导体的单晶氧化物也可包含其中,在本实施例优选使用Sapphire;位于衬底1上之缓冲层2,其材料为金属铝 (Al)。
位于缓冲层2上之N型氮化镓层3,位于N型氮化镓层3上的应力释放层4,此应力释放层4为氮化铟镓或氮化铟镓/氮化镓超晶格结构,位于应力释放层4上之活性层5,其材质是氮化铟镓,位于活性层5上的P型层6,其成长温度介于700℃到1100℃,P型层6厚度小于600Å。
本实施方式的氮化镓发光二极管结构使用衬底为Sapphire,位于衬底1上之缓冲层2,此缓冲层2通过三甲基铝的有机金属气相沉积形成,其成长温度(b)为200℃≦b≦1000℃,厚度(a)为5Å≦a≦300Å,缓冲层2成长后,需要升温至高于三甲基铝的熔点660℃,记此温度为T2(T2>T1),当升温至660℃以上可通入氨气或同时通入三甲基镓与氨气,接着在所述缓冲层2上继续形成N型层、活性层以及P型层。由于在达到660℃温度前不通氨气,可以使得三甲基铝熔解形成不规则的形状,使发光二极管可通过缓冲层的不规则铝金属产生反射与折射效应,以提高外部量子效率。
依据本发明具低电阻值P型层之氮化镓,其 P型电极层包括Ni/Au,Ni/Pd,Ni/Pt,Pd/Au,Pt/Au,Ti/Au,Cr/Au,TiN,TiWNx,WSix之金属导电层或透明导电氧化层包含ITO,ZnO,NiO,CTO等等。
实施例
2
本实施例与实施例1的区别在于:实施例1的金属铝薄膜层是通过三甲基铝的有机金属气相沉积形成,而本实施例的金属铝薄膜层是利用电子束蒸镀铝形成。
应当理解的是,上述具体实施方案为本发明的优选实施例,本发明的范围不限于该实施例,凡依本发明所做的任何变更,皆属本发明的保护范围之内。
Claims (10)
1.氮化物发光二极管,包括缓冲层、N型层、活性层以及P型层,其特征在于:所述缓冲层为金属铝,其呈不规则颗粒状,当活性层发出的光线入射至所述缓冲层时发生反射与折射效应。
2.根据权利要求1所述的氮化物发光二极管,其特征在于:所述金属铝缓冲层厚度为5Å~300Å。
3.根据权利要求1所述的氮化物发光二极管,其特征在于:还包括一应力释放层,其位于所述N型层和活性层之间。
4.氮化物发光二极管的制作方法,包括步骤:
提供一衬底,
在所述衬底之上形成一呈不规则颗粒状的金属铝薄膜层作为缓冲层;
在所述金属铝缓冲层上依次形成N型层、活性层、P型层,当活性层发出的光线入射至所述不规则颗粒状的缓冲层时,发生反射与折射效应。
5.根据权利要求4所述的氮化物发光二极管的制作方法,其特征在于:将所述衬底置于一反应室里,调节所述反应室的温度为T1,仅通入三甲基铝源,使其在温度T1条件下熔融聚集在所述衬底上形成不规则颗粒状的铝薄膜层。
6.根据权利要求5所述的氮化物发光二极管的制作方法,其特征在于:所述温度T1小于或等于660℃。
7.根据权利要求6所述的氮化物发光二极管的制作方法,其特征在于:所述温度T1为200℃~660℃。
8.根据权利要求4所述的氮化物发光二极管的制作方法,其特征在于:当形成一定厚度的铝薄膜层后关闭三甲基铝源,调节所述反应室的温度为T2,并通入氨气或同时通入三甲基镓与氨气,在所述缓冲层上继续形成N型层、活性层以及P型层,其中T2>T1。
9.根据权利要求8所述的氮化物发光二极管的制作方法,其特征在于:所述温度T2大于660℃。
10.根据权利要求4所述的氮化物发光二极管的制作方法,其特征在于:所述金属铝薄膜层利用电子束蒸镀铝形成。
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Cited By (4)
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WO2016023352A1 (zh) * | 2014-08-11 | 2016-02-18 | 厦门市三安光电科技有限公司 | 氮化镓发光二极管及其制作方法 |
CN105514232A (zh) * | 2016-01-08 | 2016-04-20 | 华灿光电股份有限公司 | 一种发光二极管外延片、发光二极管及外延片的制作方法 |
CN105514234A (zh) * | 2015-12-14 | 2016-04-20 | 安徽三安光电有限公司 | 一种氮化物发光二极管及其生长方法 |
CN109192826A (zh) * | 2018-07-09 | 2019-01-11 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
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CN103346223A (zh) * | 2013-06-06 | 2013-10-09 | 华灿光电股份有限公司 | 一种发光二极管的外延片 |
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CN101719465B (zh) * | 2009-11-27 | 2015-10-21 | 晶能光电(江西)有限公司 | 硅衬底GaN基半导体材料的制造方法 |
CN104103723B (zh) * | 2014-08-11 | 2017-09-29 | 安徽三安光电有限公司 | 氮化镓发光二极管及其制作方法 |
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CN101388346A (zh) * | 2007-09-12 | 2009-03-18 | 中国科学院半导体研究所 | 在Si衬底上生长ZnO薄膜的方法 |
US20090309126A1 (en) * | 2008-06-16 | 2009-12-17 | Toyoda Gosei Co., Ltd. | Group III nitride-based compound semiconductor light-emitting device and production method therefor |
CN103346223A (zh) * | 2013-06-06 | 2013-10-09 | 华灿光电股份有限公司 | 一种发光二极管的外延片 |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2016023352A1 (zh) * | 2014-08-11 | 2016-02-18 | 厦门市三安光电科技有限公司 | 氮化镓发光二极管及其制作方法 |
CN105514234A (zh) * | 2015-12-14 | 2016-04-20 | 安徽三安光电有限公司 | 一种氮化物发光二极管及其生长方法 |
CN105514232A (zh) * | 2016-01-08 | 2016-04-20 | 华灿光电股份有限公司 | 一种发光二极管外延片、发光二极管及外延片的制作方法 |
CN105514232B (zh) * | 2016-01-08 | 2018-04-24 | 华灿光电股份有限公司 | 一种发光二极管外延片、发光二极管及外延片的制作方法 |
CN109192826A (zh) * | 2018-07-09 | 2019-01-11 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
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