CN104103658A - Bar grating type SOI photoelectric detector with resonant cavity enhancement effects - Google Patents
Bar grating type SOI photoelectric detector with resonant cavity enhancement effects Download PDFInfo
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- CN104103658A CN104103658A CN201410352543.XA CN201410352543A CN104103658A CN 104103658 A CN104103658 A CN 104103658A CN 201410352543 A CN201410352543 A CN 201410352543A CN 104103658 A CN104103658 A CN 104103658A
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Abstract
The invention discloses a bar grating type SOI photoelectric detector with resonant cavity enhancement effects. The bar grating type SOI photoelectric detector with the resonant cavity enhancement effects solves the problem that semiconductor CMOS technology of an existing CMOS photoelectric detector structure limits improvements of device structures and electrical properties. The bar grating type SOI photoelectric detector with the resonant cavity enhancement effects comprises a P-type semiconductor substrate, a buried oxidation layer, an N-well region, a P-type ohm contact region, an annular ground electrode, an annular voltage electrode, an N-type ohm contact region, an output electrode, a bar grating type PCOMP, a top oxidation layer and polycrystalline silicon. The bar grating type SOI photoelectric detector with the resonant cavity enhancement effects is of bar grating structure, and increases the area of an exhaustion region. Simultaneously, due to the fact that an absorbing layer is thin, transition time of electron-hole pairs generated by photon-generated carriers is little when the electron-hole pairs are transited in the absorbing layer, the bar grating type SOI photoelectric detector with the resonant cavity enhancement effects is enabled to obtain high bandwidth, and the problem that quantum efficiency and the bandwidth of an existing photoelectric detector restrict each other is solved. The bar grating type SOI photoelectric detector with the resonant cavity enhancement effects has high responsiveness and the high bandwidth in work by changing transverse and lengthways structure (three dimensional structure) of the existing photoelectric detector.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of SOI photodetector with resonant cavity enhancement effect bar grid type.
Background technology
Because the continuous growth of optical fiber communication, infrared remote sensing and Military Application demand has promoted the development of semiconductor device and optical circuit thereof.Along with the continuous embodiment of optical circuit system powerful advantages, photoelectric device and circuit thereof have a wide range of applications in fields such as computing system, free space satellite system, optical disc storage application, imaging system and communication systems.Consider the compatibility of CMOS technique, traditional Si base photodetector is that the injection of carrying out N-shaped ion on Si substrate forms n well region (n-well), closes on the source region that forms p between n well region, at the metal lead wire of source region Base top contact electrode in substrate top; In n well region, by bar grid type, carry out the PCOMP that p-type Implantation forms bar grid type, in the part at PCOMP and n well region edge, generate the ohmic contact regions of n, and at the metal lead wire of ohmic contact regions Base top contact electrode; At each PCOMP top, form the ohmic contact regions of p, and at the metal lead wire of the Base top contact electrode of ohmic contact regions.Traditional cmos photodetector is because the absorption coefficient of Si is lower, thereby quantum efficiency is low, if improve quantum efficiency by increasing absorber thickness, can make bandwidth greatly reduce, and is unfavorable for improving the composite characteristic of device and system.Along with the development of semiconductor technology and TCAD, adopt spatial modulation (SML), the horizontal isostructural CMOS photodetector of PIN to be subject to CMOS process technology limit, responsiveness and bandwidth cannot further meet the demand of the light interconnection such as ultrahigh speed short distance.In order to realize the more photodetector of high-responsivity and bandwidth, researcher has also proposed avalanche breakdown photodetector (APD) structure based on silicon CMOS technique, the performances such as the responsiveness of this structure and frequency bandwidth are all better, weak point is that photodetector need to apply high reverse biased, has limited photodetector application scope greatly.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of SOI photodetector new construction with resonant cavity enhancement effect bar grid type is provided, by introducing Fabry-spread out chamber, utilize bar grating structure simultaneously, increase depletion region area, quantum efficiency is increased greatly, can not make Bandwidth Reduction simultaneously, this device can be realized in SOI CMOS technique, there is good processing compatibility, thereby can integrate and form electro-optical system on optoelectronic integrated circuit chip or sheet with common cmos device; Compare other can CMOS compatible photodetector simultaneously, has the feature of high-quantum efficiency, high-responsivity and high bandwidth.
A kind of resonant cavity enhanced photoelectric detector with bar grid type PCOMP of the present invention, comprises p-type Semiconductor substrate, buries oxide layer, N-shaped n-well well region, p-type ohmic contact regions, PCOMP, top layer oxide layer and the polysilicon of electrode, annular voltage pole, N-shaped ohmic contact regions, output electrode, bar grid type circlewise;
Apart from p-type semiconductor substrate surface 2 um places, be provided with and bury oxide layer, p-type Semiconductor substrate upper surface is provided with N-shaped n-well well region, annular p-type ohmic contact regions is arranged on p-type Semiconductor substrate upper surface and is positioned at N-shaped n-well well region outside, electrode is arranged on annular p-type ohmic contact regions circlewise, the N-shaped ohmic contact regions of annular is arranged on p-type Semiconductor substrate upper surface and is positioned at N-shaped n-well well region inner side, annular voltage pole is arranged on annular N-shaped ohmic contact regions, at p-type Semiconductor substrate upper surface and be positioned at the PCOMP that annular voltage pole inner side is provided with many bar grid types parallel to each other, on the PCOMP of every bar grid type, output electrode is set, between each electrode of p-type Semiconductor substrate upper surface, cover layer of oxide layer, at surface coverage one deck polysilicon of oxide layer.
Described p-type Semiconductor substrate is Sapphire Substrate or silicon substrate.
The described oxidated layer thickness that buries is 140nm.
Described N-shaped n-well well region thickness is 1.5um.
The PCOMP thickness of described bar grid type is 1um.
The oxidated layer thickness 140nm of described top layer.
Described polysilicon thickness is 60nm.
The material of described electrode circlewise, annular voltage pole and output electrode is respectively a kind of of Al or Cu.
Distance between the PCOMP of bar grid type is 1um.
The described epitaxial growth mode of burying oxide layer, N-shaped n-well well region, the PCOMP of bar grid type, HenXing ohmic contact regions, annular p-type ohmic contact regions adopts note oxygen isolation (SIMOX) method to realize.
The SOI photodetector new construction of resonant cavity enhanced grid type of the present invention, by introducing Fabry-spread out chamber, make light wave reciprocating motion in cavity, thereby make light wave Multiple through then out absorbed layer reach photoelectricity enhancement effect, device can obtain higher quantum efficiency.Utilize bar grating structure, increase depletion region area, simultaneously because absorbed layer is thinner, the transit time of the electron-hole pair that photo-generated carrier produces in absorbed layer is less, can make device obtain higher bandwidth, solve between the quantum efficiency of photodetector and bandwidth the problem of restriction mutually.
Beneficial effect: the present invention, by changing horizontal, longitudinal (three-dimensional) structure of photodetector, makes this new device have higher responsiveness and bandwidth when working as photodetector.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the A-A schematic cross-section of Fig. 1;
Fig. 4 is the B-B schematic cross-section of Fig. 1.
Embodiment
As shown in Fig. 1,2,3 and 4, a resonant cavity enhanced photoelectric detector with bar grid type PCOMP, comprises p-type Semiconductor substrate 1, buries oxide layer 2, N-shaped n-well well region 3, p-type ohmic contact regions 4, PCOMP 9, top layer oxide layer 11 and the polysilicon 10 of electrode 5, annular voltage pole 6, N-shaped ohmic contact regions 7, output electrode 8, bar grid type circlewise;
Apart from the surperficial 2 um places of p-type Semiconductor substrate 1 be provided with thickness be 140nm bury oxide layer 2, p-type Semiconductor substrate 1 upper surface is provided with the N-shaped n-well well region 3 that thickness is 1.5um, annular p-type ohmic contact regions 4 is arranged on p-type Semiconductor substrate 1 upper surface and is positioned at N-shaped n-well well region 3 outsides, electrode 5 arranges on annular p-type ohmic contact regions circlewise, the N-shaped ohmic contact regions 7 of annular is arranged on p-type Semiconductor substrate 1 upper surface and is positioned at N-shaped n-well well region 3 inner sides, annular voltage pole 6 is arranged on annular N-shaped ohmic contact regions 7, at p-type Semiconductor substrate 1 upper surface and be positioned at the PCOMP 9 that annular voltage pole 6 inner sides are provided with the bar grid type that many thickness parallel to each other are 1um, distance between the PCOMP of bar grid type is 1um.On the PCOMP of every bar grid type, output electrode 8 is set; Between each electrode of p-type Semiconductor substrate 1 upper surface, covering a layer thickness is 140nm oxide layer 11, the polysilicon 10 that is 60nm in surface coverage a layer thickness of oxide layer.
Described p-type Semiconductor substrate is silicon substrate.
Three kinds of described electrode materials are Cu.
The described epitaxial growth mode of burying oxide layer, N-shaped n-well well region, the PCOMP of bar grid type, HenXing ohmic contact regions, annular p-type ohmic contact regions adopts note oxygen isolation (SIMOX) method to realize.
When photon incides photosensitive equipment surperficial, absorbed part photon can excite photosensitive material production electron-hole pair, forms electric current, is called photoelectric effect, and the electronics now producing is called quantum efficiency with the ratio of the number of photons of all incidents.The quantum efficiency computing formula of normal optical electric explorer
, the computing formula of the quantum efficiency of resonant cavity type photodetector
, r wherein
1, r
2for the reflection coefficient of the upper and lower minute surface of resonant cavity,
for the absorption coefficient of material, L is depletion layer thickness.In resonant cavity, owing to choosing suitable mirror up and down, it is large that reflection coefficient becomes, the structure of bar grid type can increase the effective area of depletion layer simultaneously, but the motion for charge carrier can not cause delay, thereby can when thin depletion layer, obtain larger quantum efficiency, guarantee that bandwidth can not narrow down simultaneously.When top mirror is a pair of Si-SiO2, when end mirror is three couples of Si-SiO2, can be calculated by formula
=0.325, be the 2-3 of normal optical electric explorer doubly.This is to have supported theoretically the cavity resonator structure by bar grid type to improve the method for device quantum efficiency, has higher responsiveness when device is interconnected for light.
Claims (10)
1. a SOI photodetector with resonant cavity enhancement effect bar grid type, comprises p-type Semiconductor substrate, buries oxide layer, N-shaped n-well well region, p-type ohmic contact regions, PCOMP, top layer oxide layer and the polysilicon of electrode, annular voltage pole, N-shaped ohmic contact regions, output electrode, bar grid type circlewise;
It is characterized in that: apart from p-type semiconductor substrate surface 2 um places, be provided with and bury oxide layer, p-type Semiconductor substrate upper surface is provided with N-shaped n-well well region, annular p-type ohmic contact regions is arranged on p-type Semiconductor substrate upper surface and is positioned at N-shaped n-well well region outside, electrode is arranged on annular p-type ohmic contact regions circlewise, the N-shaped ohmic contact regions of annular is arranged on p-type Semiconductor substrate upper surface and is positioned at N-shaped n-well well region inner side, annular voltage pole is arranged on annular N-shaped ohmic contact regions, at p-type Semiconductor substrate upper surface and be positioned at the PCOMP that annular voltage pole inner side is provided with many bar grid types parallel to each other, on the PCOMP of every bar grid type, output electrode is set, between each electrode of p-type Semiconductor substrate 1 upper surface, cover layer of oxide layer, at surface coverage one deck polysilicon of oxide layer.
2. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: described p-type Semiconductor substrate is Sapphire Substrate or silicon substrate.
3. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: the described oxidated layer thickness that buries is 140nm.
4. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: described N-shaped n-well well region thickness is 1.5um.
5. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: the PCOMP thickness of described bar grid type is 1um.
6. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: the oxidated layer thickness 140nm of described top layer.
7. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: described polysilicon thickness is 60nm.
8. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: the material of described electrode circlewise, annular voltage pole and output electrode is respectively a kind of of Al or Cu.
9. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: the distance between the PCOMP of bar grid type is 1um.
10. a kind of SOI photodetector with resonant cavity enhancement effect bar grid type according to claim 1, is characterized in that: the described epitaxial growth mode of burying oxide layer, N-shaped n-well well region, the PCOMP of bar grid type, HenXing ohmic contact regions, annular p-type ohmic contact regions adopts note oxygen partition method to realize.
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| US20060008223A1 (en) * | 2003-08-15 | 2006-01-12 | Luxtera, Inc | PN diode optical modulators fabricated in rib waveguides |
| US20100327397A1 (en) * | 2009-06-25 | 2010-12-30 | Sumco Corporation | Method for manufacturing simox wafer and simox wafer |
| CN102593132A (en) * | 2012-02-24 | 2012-07-18 | 天津大学 | Lamination differential photoelectric detector based on standard CMOS (complementary metal oxide semiconductor) process |
| CN103219342A (en) * | 2013-04-07 | 2013-07-24 | 浙江工业大学 | Double-junction depth photodiode for fluorescence detection |
| CN203983286U (en) * | 2014-07-23 | 2014-12-03 | 杭州电子科技大学 | There is the SOI photodetector of resonant cavity enhancement effect bar grid type |
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- 2014-07-23 CN CN201410352543.XA patent/CN104103658A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060008223A1 (en) * | 2003-08-15 | 2006-01-12 | Luxtera, Inc | PN diode optical modulators fabricated in rib waveguides |
| US20100327397A1 (en) * | 2009-06-25 | 2010-12-30 | Sumco Corporation | Method for manufacturing simox wafer and simox wafer |
| CN102593132A (en) * | 2012-02-24 | 2012-07-18 | 天津大学 | Lamination differential photoelectric detector based on standard CMOS (complementary metal oxide semiconductor) process |
| CN103219342A (en) * | 2013-04-07 | 2013-07-24 | 浙江工业大学 | Double-junction depth photodiode for fluorescence detection |
| CN203983286U (en) * | 2014-07-23 | 2014-12-03 | 杭州电子科技大学 | There is the SOI photodetector of resonant cavity enhancement effect bar grid type |
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| 蔡子龙: "光互连中光开关与光探测器件的研究", 《中国优秀博硕士学位论文全文数据库 (硕士)》 * |
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Application publication date: 20141015 |