CN104103398A - Electronic component - Google Patents
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- CN104103398A CN104103398A CN201410081799.1A CN201410081799A CN104103398A CN 104103398 A CN104103398 A CN 104103398A CN 201410081799 A CN201410081799 A CN 201410081799A CN 104103398 A CN104103398 A CN 104103398A
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- 239000004020 conductor Substances 0.000 claims abstract description 163
- 239000012212 insulator Substances 0.000 claims abstract description 47
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 claims description 4
- 238000010030 laminating Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000009413 insulation Methods 0.000 description 17
- 238000011144 upstream manufacturing Methods 0.000 description 13
- 230000004907 flux Effects 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 238000005094 computer simulation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
- H01F2017/002—Details of via holes for interconnecting the layers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coils Or Transformers For Communication (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Abstract
An electronic component having; a laminate 12 formed by laminating a plurality of insulator layers 16; and a coil L consisting of linear coil conductor layers 19a- 19d that are laminated along with the insulator layers, the coil having a spiral form or a helical form that windingly extends in a direction of lamination. In a cross section perpendicular to a direction in which the coil L conductor layers 19a-19d extend, the coil conductor layers have recesses Ga-Gd provided in their surfaces directed toward an inner circumference side of the coil, the recesses being set back toward an outer circumference side of the coil.
Description
Technical field
The present invention relates to electronic unit, more specifically say, relate to the electronic unit that is built-in with coil.
Background technology
As the relevant invention of the electronic unit in the past, the known laminate type electronic component that has patent documentation 1 to record for example.This laminate type electronic component possesses duplexer and coil.Duplexer forms by stacked a plurality of ferrite sheets.A plurality of coil-conductor patterns of coil connect by through hole, are the helical form of advancing and reeling to stacked direction on one side on one side.
Yet, in the laminate type electronic component of recording at patent documentation 1, if for example wish obtains the lower coil of D.C. resistance, need the live width of chap or thickening coil-conductor pattern, but like this, have the problem that is difficult to obtain larger inductance value.More specifically,, in spiral coil, the magnetic flux density of coil inside uprises.In this situation, cannot pass through coil-conductor pattern by the magnetic flux of coil inside.Due to the high-frequency signal that flows at coil, so the direction of the magnetic flux that coil produces periodically changes.If the direction of the magnetic flux by coil-conductor pattern periodically changes, in coil conductive pattern, produce eddy current and produce Joule heat.Its result, produces eddy current loss, and the inductance value of coil reduces.
Patent documentation 1: TOHKEMY 2000-286125 communique
Summary of the invention
Given this, the object of the present invention is to provide the electronic unit with larger inductance value.
The electronic unit of a mode of the present invention is characterised in that to possess: duplexer, and it forms by stacked a plurality of insulator layers; And coil, its coil-conductor layer by wire stacked together with above-mentioned insulator layer forms, above-mentioned coil is swirl shape or forms the helical form of advancing to stacked direction while reeling, section at the direction quadrature with above-mentioned coil-conductor layer extension, face in the inner circumferential side towards above-mentioned coil of this coil-conductor layer, is provided with the recess towards the outer circumferential side depression of this coil.
According to the present invention, can obtain the electronic unit with larger inductance value.
Accompanying drawing explanation
Fig. 1 is the stereoscopic figure of the electronic unit of an execution mode.
Fig. 2 is the exploded perspective view of the electronic unit of Fig. 1.
Fig. 3 is the sectional structure chart of A-A of duplexer of the electronic unit of Fig. 1.
Operation cutaway view when Fig. 4 is the manufacture of electronic unit.
Operation cutaway view when Fig. 5 is the manufacture of electronic unit.
Operation cutaway view when Fig. 6 is the manufacture of electronic unit.
Operation cutaway view when Fig. 7 is the manufacture of electronic unit.
Operation cutaway view when Fig. 8 is the manufacture of electronic unit.
Operation cutaway view when Fig. 9 is the manufacture of electronic unit.
Operation cutaway view when Figure 10 is the manufacture of electronic unit.
Operation cutaway view when Figure 11 is the manufacture of electronic unit.
Operation cutaway view when Figure 12 is the manufacture of electronic unit.
Operation cutaway view when Figure 13 is the manufacture of electronic unit.
Operation cutaway view when Figure 14 is the manufacture of electronic unit.
Operation cutaway view when Figure 15 is the manufacture of electronic unit.
Operation cutaway view when Figure 16 is the manufacture of electronic unit.
Operation cutaway view when Figure 17 is the manufacture of electronic unit.
Operation cutaway view when Figure 18 is the manufacture of electronic unit.
Operation cutaway view when Figure 19 is the manufacture of electronic unit.
Figure 20 means the chart of analog result.
Figure 21 is the photo of the cross-section structure of coil-conductor layer.
Figure 22 is the sectional structure chart of coil-conductor layer.
Figure 23 means the chart of analog result.
The explanation of Reference numeral:
Ga～Gh ... recess; L ... coil; Op1～Op4 ... opening; 10,10a ... electronic unit; 12 ... duplexer; 14a, 14b ... outer electrode; 16a～16i ... insulator layer; 18a～18h, 19a～19d ... coil-conductor layer.
Embodiment
Below, the electronic unit of an embodiment of the invention is described.
(structure of electronic unit)
Below, with reference to accompanying drawing, the structure of the electronic unit of an execution mode is described.Fig. 1 is the stereoscopic figure of the electronic unit 10 of an execution mode.Fig. 2 is the exploded perspective view of the electronic unit 10 of Fig. 1.Fig. 3 is the sectional structure chart of A-A of duplexer 12 of the electronic unit 10 of Fig. 1.In Fig. 3, outer electrode 14a, 14b have been omitted.Below, the stacked direction of duplexer 12 is defined as to above-below direction, the direction that the minor face of duplexer 12 extends when overlooking duplexer 12 from upside is defined as fore-and-aft direction, and the direction of the long limit extension of duplexer 12 is defined as to left and right directions.
As shown in Figure 1 to Figure 3, electronic unit 10 possesses duplexer 12, outer electrode 14a, 14b and coil L.Duplexer 12 forms by stacked insulator layer 25,16a～16i, is rectangular-shaped.Insulator layer 25,16a～16i stack gradually to downside from upside, and the outer rim being rectangle.At insulator layer 25, be provided with circular blank parts.Circular blank parts is used as direction identification mark.In addition, on insulator layer 16b, 16d, 16f, 16h, be respectively arranged with opening Op1～Op4.In addition, on insulator layer 16c, 16e, 16g, be provided with through hole Ta～Tc.Like this, be provided with insulator layer 16b, 16d, 16f, the 16h of opening Op1～Op4 and insulator layer 16c, 16e, the 16g of opening be not set alternately laminated.After opening Op1～Op4 and through hole Ta～Tc are described.Insulator layer 16a～16i is made by the glass that contains magnetic material.Below, the face of the upside of insulator layer 16a～16i is called to surface, the face of the downside of insulator layer 16a～16i is called to the back side.
When overlooking from upside, coil L is the helical form that the skidding that makes progress to clockwise direction coiling one side from downside enters on one side.Coil L comprises coil-conductor layer 19a～19d and path hole conductor Va～Vc.Coil-conductor layer 19a～19d is stacked together with insulator layer 16a～16i, and when overlooking from upside, coil-conductor layer 19a～19d is the linear conductor of reeling clockwise centered by duplexer 12 center (cornerwise intersection point).Coil-conductor layer 19a～19d for example makes by take the conductive material that Ag is principal component.Below, the end of the clockwise upstream side of coil-conductor layer 19a～19d is called to upstream extremity, the end in the clockwise downstream of coil-conductor layer 19a～19d is called to downstream.
In addition, as shown in Figure 2, coil-conductor layer 19a comprises coil-conductor layer 18a, 18b.When overlooking from upside, coil-conductor layer 18a, 18b are roughly identical shape, stacked on above-below direction.More specifically, coil-conductor layer 18b is arranged on the surface of insulator layer 16c.Opening Op1 is arranged on insulator layer 16b as described above.When overlooking from upside, opening Op1 is the wire overlapping with coil-conductor layer 18b and is the shape roughly the same with coil-conductor layer 18b.Wherein, the live width W3 of opening Op1 is thinner than the live width W2 of the live width W1 of coil-conductor layer 18a and coil-conductor layer 18b.
As shown in FIG. 2 and 3, coil-conductor layer 18a is arranged in opening Op1 and on the surface of insulator layer 16b.Yet when overlooking from upside, coil-conductor layer 18a surrounding from opening Op1 on the surface of insulator layer 16b is outstanding.Thus, at the section of the direction quadrature with coil-conductor layer 18a extension, the section shape that coil-conductor layer 18a is in T shape.And the lower surface of coil-conductor layer 18a contacts with the upper surface of coil-conductor layer 18b.Thus, at the section of the direction quadrature with coil-conductor layer 19a extension, coil-conductor layer 19a is the section shape after H font 90-degree rotation.Therefore,, at the section of the direction quadrature extending with coil-conductor layer 19a, the face in the inner circumferential side towards coil L of coil conductor layer 19a is provided with the recess Ga towards the outer circumferential side depression of coil L.Preferably, the depth D 1(of recess Ga is with reference to Fig. 3) be that 6 μ m are above and be below 40% of live width W1, W2 of coil-conductor layer 18a～18h.
Coil-conductor layer 19b possesses coil-conductor layer 18c, 18d as illustrated in fig. 2.Coil-conductor layer 19c possesses coil-conductor layer 18e, 18f as illustrated in fig. 2.Coil-conductor layer 19d possesses coil-conductor layer 18g, 18h as illustrated in fig. 2.Wherein, the structure of coil-conductor layer 19b～19d is identical with the structure of coil-conductor layer 19a, and therefore description thereof is omitted.In addition, the structure of opening Op2～Op4 is also identical with the structure of opening Op1, and therefore description thereof is omitted.
Through hole Ta～Tc connects respectively the hole of insulator layer 16c, 16e, 16g along the vertical direction.When overlooking from upside, through hole Ta overlaps with the upstream extremity of coil-conductor layer 18b and the downstream of coil-conductor layer 18c.When overlooking from upside, through hole Tb overlaps with the upstream extremity of coil-conductor layer 18d and the downstream of coil-conductor layer 18e.When overlooking from upside, through hole Tc overlaps with the upstream extremity of coil-conductor layer 18f and the downstream of coil-conductor layer 18g.
Path hole conductor Va is outstanding downwards from the upstream extremity of coil-conductor layer 18b, and is arranged in through hole Ta.Thus, the downstream of the upstream extremity of path hole conductor Va connecting coil conductor layer 18b and coil-conductor layer 18c.Path hole conductor Vb is outstanding downwards from the upstream extremity of coil-conductor layer 18d, and is arranged in through hole Tb.Thus, the downstream of the upstream extremity of path hole conductor Vb connecting coil conductor layer 18d and coil-conductor layer 18e.Path hole conductor Vc is outstanding downwards from the upstream extremity of coil-conductor layer 18f, and is arranged in through hole Tc.Thus, the downstream of the upstream extremity of path hole conductor Vc connecting coil conductor layer 18f and coil-conductor layer 18g.Thus, coil-conductor layer 19a～19d is by being connected by path hole conductor Va～Vc, and spiral coil L.
Outer electrode 14a covers the end face on the right side of duplexer 12, and turns back to the side of upper surface, lower surface and fore-and-aft direction.The downstream of coil-conductor layer 19a is led to the end face on the right side of duplexer 12.Thus, the downstream of coil-conductor layer 19a is connected with outer electrode 14a.
Outer electrode 14b covers the end face in the left side of duplexer 12, and turns back to the side of upper surface, lower surface and fore-and-aft direction.The upstream extremity of coil-conductor layer 19d is led to the end face in the left side of duplexer 12.Thus, the upstream extremity of coil-conductor layer 19d is connected with outer electrode 14b.
(manufacture method of electronic unit)
Next, with reference to accompanying drawing, the manufacture method of electronic unit 10 is described.Operation cutaway view when Fig. 4 to Figure 19 is the manufacture of electronic unit 10.Below, to manufacturing the operation of an electronic unit 10, describe, but in fact, by making after female duplexer, cut and make a plurality of electronic units 10 simultaneously.
First, as shown in Figure 4, by printing, apply photonasty insulation and stick with paste.And as shown in Figure 5, the whole face that this photonasty insulation is stuck with paste exposes.Thus, photonasty insulation is stuck with paste and be solidified to form insulator layer 16i.
Next, as shown in Figure 6, by being printed on the upper photoelectric sensitivity conductive that applies of insulator layer 16i, stick with paste.And, as shown in Figure 7, across mask M1, photoelectric sensitivity conductive is stuck with paste and exposed.At mask M1, be provided with the opening of the shape identical with coil-conductor layer 18h.Thus, suitable with coil-conductor layer 18h partly solidified in sticking with paste of photoelectric sensitivity conductive.And, as shown in Figure 8, with developer solution, remove uncured photoelectric sensitivity conductive and stick with paste.Thus, form coil-conductor layer 18h.
Next, as shown in Figure 9, by being printed on insulator layer 16i above and the upper photonasty insulation paste that applies of coil-conductor layer 18h.And, as shown in figure 10, across mask M2, this photonasty insulation is stuck with paste and exposed.Mask M2 covers the part corresponding with opening Op4 that photonasty insulation is stuck with paste.Thus, photonasty insulation partly solidified except opening Op4 in sticking with paste.And, as shown in figure 11, with developer solution, remove uncured photonasty insulation and stick with paste.Thus, form insulator layer 16h.
Next, as shown in figure 12, by being printed on insulator layer 16h above and applying photoelectric sensitivity conductive in opening Op4, stick with paste.And, as shown in figure 13, across mask M3, photoelectric sensitivity conductive is stuck with paste and exposed.At mask M3, be provided with the opening of the shape identical with coil-conductor layer 18g.Thus, suitable with coil-conductor layer 18g partly solidified in sticking with paste of photoelectric sensitivity conductive.And, as shown in figure 14, with developer solution, remove uncured photoelectric sensitivity conductive and stick with paste.Thus, form coil-conductor layer 18g.
Next, as shown in figure 15, by being printed on insulator layer 16h above and the upper photonasty insulation paste that applies of coil-conductor layer 18g.And, as shown in figure 16, across not shown mask, this photonasty insulation is stuck with paste and exposed.Not shown mask covers the part corresponding with through hole Tc that photonasty insulation is stuck with paste.Thus, photonasty insulation partly solidified except through hole Tc in sticking with paste.And, with developer solution, remove uncured photonasty insulation and stick with paste.Thus, form insulator layer 16g.Afterwards, by repeatedly carrying out the operation of Fig. 6 to Figure 16, form as illustrated in fig. 17 insulator layer 16b～16f, coil-conductor layer 18a～18f.
Next, as shown in figure 18, by being printed on insulator layer 16b above and the upper photonasty insulation paste that applies of coil-conductor layer 18a.And as shown in figure 19, the whole face that insulation is stuck with paste to photonasty exposes.Thus, photonasty insulation is stuck with paste and is solidified, and forms insulator layer 16a.And, by being printed on the upper insulation paste that applies of insulator layer 16a, form insulator layer 25.Thus, obtain the female duplexer as the aggregate of a plurality of duplexers 12.
Next, by female duplexers of cutting such as cutting machines, and obtain a plurality of duplexers 12 of not firing.And, under rated condition, the duplexer 12 of not firing is fired.
Next, by dipping, the both ends of the surface of duplexer 12 are applied to the conductive paste being formed by Ag, and carry out sintering, thereby form basal electrode.Finally, on basal electrode, implement the plating of Ni, Cu, Sn etc., thereby form outer electrode 14a, 14b.Via above operation, complete electronic unit 10.
(effect)
Electronic unit 10 according to present embodiment, can obtain larger inductance value.More specifically,, in forming spiral helicine coil L, the magnetic flux density of coil L inside uprises.And, cannot can pass through coil-conductor layer 18a～18h by the magnetic flux of coil L inside.Like this, if magnetic flux is by coil-conductor layer 18a～18h, produce eddy current, thereby the inductance value of coil L reduces.
Herein, cannot near the face of the inner circumferential side towards coil L of coil conductor layer 19a～19d, pass through by the magnetic flux of coil L inside.Therefore, eddy current also easily produces near the face of the inner circumferential side towards coil L of coil conductor layer 19a～19d.Therefore,, in electronic unit 10, the face in the inner circumferential side towards coil L of coil conductor layer 19a～19d, is provided with the recess Ga～Gd towards the outer circumferential side depression of coil L.Thus, near the less thick of the above-below direction face of the inner circumferential side towards coil L of coil-conductor layer 19a～19d.Thereby magnetic flux also shortens by the distance of coil-conductor layer 19a～19d.Its result, the situation that produces eddy current in coil-conductor layer 19a～19d reduces, thereby suppresses the inductance value reduction of coil L.In addition,, from computer simulation described later, preferably, the depth D 1 of recess Ga～Gd is more than 6 μ m and is below 40% of live width W1, W2 of coil-conductor layer 18a～18h.
(computer simulation)
Present inventor is correct in order to confirm that the inductance value of coil L becomes large principle in the above description, has carried out following computer simulation.As shown in the enlarged drawing of Fig. 3, the recess of the face setting of the outer circumferential side towards coil L at coil conductor layer 19a～19d is made as to recess Ge～Gh.And, the degree of depth of recess Ge～Gh is made as to depth D 2.Present inventor changes depth D 1, D2, and has calculated the inductance value of coil L.Below, the condition of the first model to the three models that use in computer simulation is described.
The first model
Depth D 1:0 μ m
Depth D 2:0 μ m
The second model
Depth D 1:10 μ m
Depth D 2:0 μ m
The 3rd model
Depth D 1:0 μ m
Depth D 2:10 μ m
In the first model, inductance value is 2.276nH.In the second model, inductance value is 2.321nH.That is, in the second model, compare with the first model, inductance value has increased 0.045nH.On the other hand, in the 3rd model, inductance value is 2.282nH.That is, in the 3rd model, compare with the first model, inductance value has only increased 0.006nH.Like this, known, the situation that is provided with recess Ge～Gh with the face of the outer circumferential side towards coil L at coil conductor layer 19a～19d is compared, in the situation that the face of the inner circumferential side towards coil L of coil conductor layer 19a～19d is provided with recess Ga～Gd, it is large that the inductance value of coil L becomes.Therefore, according to this computer simulation, knownly by recess Ga～Gd is set, can reduce the eddy current producing in coil conductor layer 19a～19d, thereby suppress the reduction of the inductance value of coil L.
Next, in order to investigate the optimum depth D 1 of recess Ga～Gd, make four-model to the seven models with following condition, and calculated the inductance value of each model.
Four-model
The live width of coil-conductor layer 19a～19d (live width W1, W2): 70 μ m
The thickness of coil-conductor layer 19a～19d: 12 μ m
The 5th model
The live width of coil-conductor layer 19a～19d (live width W1, W2): 60 μ m
The thickness of coil-conductor layer 19a～19d: 12 μ m
The 6th model
The live width of coil-conductor layer 19a～19d (live width W1, W2): 40 μ m
The thickness of coil-conductor layer 19a～19d: 12 μ m
The 7th model
The live width of coil-conductor layer 19a～19d (live width W1, W2): 40 μ m
The thickness of coil-conductor layer 19a～19d: 8 μ m
In above four-model to the seven models, the depth D 1 of recess Ga～Gd is changed, and calculated the inductance value of coil L.Figure 20 means the chart of analog result.The longitudinal axis represents the rate of change of inductance value, and transverse axis represents the depth D 1 of recess Ga～Gd.The rate of change of inductance value refers to, the rate of change with respect to inductance value when depth D 1 is 0 μ m.
Known according to Figure 20, in arbitrary model of four-model to the seven models, along with depth D 1 becomes large, inductance value increases.And in arbitrary model of four-model to the seven models, depth D 1 is that in situations more than 6 μ m, inductance value does not increase substantially.Thereby known depth D 1 is preferably more than 6 μ m.In addition, present inventor is made as depth D 1 10 μ m and has calculated inductance value.Thereby preferably, depth D 1 is below 10 μ m.
In addition, in four-model, known till depth D 1 is 30 μ m, inductance value does not change substantially.In four-model, live width W1 is 70 μ m.Therefore,, in four-model, if depth D 1 is below 42.8% of live width W1, inductance value does not change substantially.Similarly, in the 5th model, known till depth D 1 is 25 μ m, inductance value does not change substantially.In the 5th model, live width W1 is 60 μ m.Therefore,, in the 5th model, if depth D 1 is below 42.5% of live width W1, inductance value does not change substantially.In the 6th model, known till depth D 1 is 16 μ m, inductance value does not change substantially.In the 6th model, live width W1 is 40 μ m.Therefore,, in the 6th model, if depth D 1 is below 40.0% of live width W1, inductance value does not change substantially.In the 7th model, known till depth D 1 is 16 μ m, inductance value does not change substantially.In the 7th model, live width W1 is 40 μ m.Therefore,, in the 7th model, if depth D 1 is below 40.0% of live width W1, inductance value does not change substantially.As mentioned above, preferably, the depth D 1 of recess Ga～Gd is below 40% of live width W1, W2 of coil-conductor layer 18a～18h.
In addition also other the size of coil-conductor layer 19a～19d is described.As shown in Figure 3, preferably, the thickness H1 that is arranged on the part on insulator layer 16b, 16d, 16f, 16h of coil-conductor layer 18a, 18c, 18e, 18g is 8 μ m～12 μ m.In addition, preferably, the thickness H3 that is arranged on the part in opening Op1～Op4 of coil-conductor layer 18a, 18c, 18e, 18g is 7 μ m.In addition, preferably, the thickness H2 of coil-conductor layer 18b, 18d, 18f, 18h is 8 μ m～12 μ m.
(method of measurement of the degree of depth of recess)
Below, with reference to accompanying drawing, the method for measurement of the depth D 1 of recess Ga～Gd is described.
First, with cured resin ruggedized electronics parts 10.Electronic unit 10 after being reinforced by cured resin is ground, the section of coil-conductor layer 19a is exposed.And, the section of the coil-conductor layer 19a exposing is implemented to polishing, eliminate the grinding scar of the section of coil-conductor layer 19a.And, utilize laser microscope (VK-8700 of Keyemce company system), the section of coil-conductor layer 19a is taken.Figure 21 is the photo of the cross-section structure of coil-conductor layer 19a.
As shown in figure 21, in fact the section shape of coil-conductor layer 19a is from the shape of H font conquassation significantly.Therefore,, when measuring the depth D 1 of recess Ga～Gd, determine the bottom of recess Ga～Gd.The bottom of recess Ga～Gd is to be arranged in the part P1 that recess Ga～Gd leans on the outer circumferential side of coil L most as shown in figure 21.Next, determine the entrance of recess Ga～Gd.The entrance of recess Ga～Gd is to be arranged in the part P2 that coil-conductor layer 19a leans on the inner circumferential side of coil L most as shown in figure 21.And the distance of the left and right directions of measure portion P1 and part P2, is made as depth D 1.By above operation, D1 can fathom.
(variation)
Below, with reference to accompanying drawing, the electronic unit 10a of variation is described.Figure 22 is the sectional structure chart of coil-conductor layer 19a.For stereoscopic figure and the exploded perspective view of electronic unit 10a, quote Fig. 1 and Fig. 2.
Electronic unit 10a is different from electronic unit 10 aspect the section shape of coil conductor layer 19a～19d.Below, the section shape of coil-conductor layer 19a～19d is carried out, omit the explanation of other structure.
As shown in figure 22, in coil-conductor layer 18c with coil-conductor layer 18b across insulator layer 16c and opposed (that is, upper surface) depression.Thus, the distance of coil-conductor layer 18b and coil-conductor layer 18c increases.Its result, has suppressed because approaching the increase of the insertion loss of the caused electronic unit 10a of effect.In addition, pass with coil-conductor layer 18b and coil-conductor layer 18c is that example is illustrated, but for the relation of coil-conductor layer 18d and coil-conductor layer 18e and the relation of coil-conductor layer 18f and coil-conductor layer 18g, also identical with the relation of coil-conductor layer 18c with coil-conductor layer 18b.
Present inventor, in order to make to suppress the things to know of the insertion loss of electronic unit 10a, has carried out the computer simulation of following explanation.More specifically, present inventor makes the 8th model to the ten models with following condition, has investigated the frequency of high-frequency signal and the relation of Q value.
The common condition of the 8th model to the ten models
The live width of coil-conductor layer (live width W1, W2): 65 μ m
The quantity of coil-conductor layer: 5 layers
The number of turn of coil L: 4.5 circles
Coil L is to the distance of the end face of duplexer: 23 μ m
The 8th model
Distance L 1:5 μ m between coil-conductor layer 18b and coil-conductor layer 18c
The 9th model
Distance L 1:10 μ m between coil-conductor layer 18b and coil-conductor layer 18c
The tenth model
Distance L 1:15 μ m between coil-conductor layer 18b and coil-conductor layer 18c
Figure 23 means the chart of analog result.The longitudinal axis represents Q value, and transverse axis represents frequency.Known according to Figure 23, along with distance L 1 becomes large, it is large that the peak value of Q value becomes.That is, the known upper surface due to coil-conductor layer 18c depression, and distance L 1 between coil-conductor layer 18b and coil-conductor layer 18c becomes large, the Q value increase of electronic unit 10a.That is,, if known distance L 1 becomes large, can suppress the insertion loss of electronic unit 10a.
In addition, known according to Figure 23, in distance L 1, be 10 μ m when above, improved significantly the peak value of Q value.Thereby preferably, distance L 1 is more than 10 μ m.
(other execution mode)
Electronic unit of the present invention is not limited to above-mentioned electronic unit 10,10a, can in the scope of its purport, change.
In addition, electronic unit 10,10a are provided with recess Ge～Gh, but recess Ge～Gh not necessarily.
In addition, in electronic unit 10,10a, coil L is spiral helicine coil, but can be also for example in the situation that upside is overlooked, to form gyrate coil.In addition, coil L can be also the spiral helicine coil that is connected with a plurality of gyrate coil-conductor layers.
Industrial utilizability
As mentioned above, the present invention is useful to electronic unit, especially can obtain have larger inductance value electronic unit aspect excellent.
Claims (5)
1. an electronic unit, is characterized in that, possesses:
Duplexer, it forms by stacked a plurality of insulator layers; With
Coil, its coil-conductor layer by wire stacked together with described insulator layer forms, while described coil be swirl shape or be the helical form of reeling and advancing to stacked direction,
At the section of the direction quadrature extending with described coil-conductor layer, the face in the inner circumferential side towards described coil of this coil-conductor layer, is provided with the recess towards the outer circumferential side depression of this coil.
2. electronic unit according to claim 1, is characterized in that,
The degree of depth of described recess is more than 6 μ m.
3. electronic unit according to claim 1 and 2, is characterized in that,
The degree of depth of described recess is below 40% of live width of described coil-conductor layer.
4. according to the electronic unit described in any one in claim 1～3, it is characterized in that,
Described a plurality of insulator layer comprises the first insulator layer and is layered in the second insulator layer on this first insulator layer,
Described coil-conductor layer comprises the first coil conductor layer and the second coil-conductor layer,
Described the first coil conductor layer is arranged on described the first insulator layer,
At described the second insulator layer, be provided with the opening of wire, this opening has the thin live width of live width than the live width of described the first coil conductor layer and described the second coil-conductor layer, and when overlooking from stacked direction, described opening overlaps with this first coil conductor layer
Described the second coil-conductor layer is arranged in described opening and on described the second insulator layer.
5. electronic unit according to claim 4, is characterized in that,
Described a plurality of the first insulator layer and described a plurality of the second insulator layer are alternately stacked,
Described coil is to connect the spiral helicine coil that comprises that respectively described a plurality of coil-conductor layers of described the first coil conductor layer and described the second coil-conductor layer form,
In described the second coil-conductor layer, across described the first insulator layer, cave in the opposed face of described the first coil conductor layer.
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Also Published As
| Publication number | Publication date |
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| JP2014207280A (en) | 2014-10-30 |
| CN107068353A (en) | 2017-08-18 |
| CN107068353B (en) | 2020-06-30 |
| JP5761248B2 (en) | 2015-08-12 |
| US20140306792A1 (en) | 2014-10-16 |
| US9362042B2 (en) | 2016-06-07 |
| CN104103398B (en) | 2016-10-05 |
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