CN104096318B - Hadron line supervising device based on pixel sensing chip and method - Google Patents
Hadron line supervising device based on pixel sensing chip and method Download PDFInfo
- Publication number
- CN104096318B CN104096318B CN201410289229.1A CN201410289229A CN104096318B CN 104096318 B CN104096318 B CN 104096318B CN 201410289229 A CN201410289229 A CN 201410289229A CN 104096318 B CN104096318 B CN 104096318B
- Authority
- CN
- China
- Prior art keywords
- chip
- hadron
- pixel
- line
- supervising device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measurement Of Radiation (AREA)
Abstract
Hadron line supervising device based on pixel sensing chip, including the two-dimentional supervising device that a vertical support frame and two sets are independent, two set two dimension supervising devices are fixed on two vertical plates of vertical support frame；Often set two dimension supervising device is by silicon pixel chip, chip bonding circuit board, positive plate, minus plate composition.The monitoring method of device is: hadron line passes the gas above silicon pixel chip, makes gas ionization produce rain of electrons, drifts about, by pixel collection corresponding in silicon pixel chip under the effect of rain of electrons electric field above silicon pixel chip；According to the response of pixel in silicon pixel chip, obtain the hadron line two-dimensional signal in silicon pixel chip place plane；Pass over by making hadron line overlap orthogonal silicon pixel chip two dimension supervising devices from two successively, rebuild the distributed in three dimensions of hadron line.The present invention monitors the distributed in three dimensions information of hadron line in real time, has the non-interception of line, radiation resistance and high position resolution.
Description
Technical field
The present invention relates to hadron therapy field, be specifically related to a kind of hadron line supervising device based on pixel sensing chip and method,
For monitoring hadron line in real time.
Background technology
Hadron will not release energy after entering material at once in a large number, only just can discharge its major part in the position that hadron stops soon
Energy, forms sharp-pointed energy peak-bragg peak, referred to as a bragg peak effect.According to bragg peak effect, use hadron
Substitute photon, electronics carries out oncotherapy, can avoid the health tissues around tumor, puts into tumor and more radiates agent
Measure, and opposing electronic, photon have higher biological effect.
At present, hadron therapy has two kinds of beam delivery technology: line scattering and line scan.Line scattering technology is to use scattering
Body dissipates line, and the collimator re-using user's customization makes the dose distribution after scattering consistent with target tumor volume with compensator.
Line scanning technique is under computer control, uses Magnet to handle a narrow monoenergetic line and scans target tumor by volume elements.By
Need by patient's equipment for customizing in line scattering technology, and scattering process can produce a large amount of secondary, so line scanning
Technology more advantage: convenient is little to healthy histologic lesion.The hadron therapy using line scanning technique needs to monitor in real time bundle
The intensity of stream and position distribution, and feedback line information, to controlling end, makes control end halved tie flow to Row sum-equal matrix in time.
Summary of the invention
The technical problem to be solved in the present invention is, the hadron therapy for existing line scanning technique needs to monitor in real time the strong of line
Degree and the problem of position distribution, it is provided that a kind of hadron line supervising device based on pixel sensing chip and method, use silicon pixel
Chip monitors hadron line in real time, has the non-interception of line, radiation resistance and high position resolution.
The present invention solves that above-mentioned technical problem be the technical scheme is that
Hadron line supervising device based on pixel sensing chip, including the two-dimentional supervising device that a vertical support frame and two sets are independent,
Vertical support frame is formed by two vertical plates are affixed, and two set two dimension supervising devices are separately fixed on two vertical plates of vertical support frame；Often overlap
Two dimension supervising device by silicon pixel chip, chip bonding circuit board, positive plate, minus plate composition, described positive plate with
Separated by alumina ceramic structure between minus plate and pass through the fixing connection of the first cylinder head bolt；Described chip bonding electricity
Road plate is fixed on positive plate by epoxide-resin glue, positive plate ground connection；Described silicon pixel chip is fixedly mounted on chip bonding
On circuit board.
By such scheme, the alumina ceramic structure on described two set two dimension supervising devices be separately positioned on positive plate and minus plate it
Between be positioned at the end that vertical support frame two vertical plate does not joins；Meanwhile, the chip bonding circuit of described two set two dimension supervising devices
Silicon pixel chip on plate is mutually perpendicular to arrange and be arranged between positive plate and minus plate to be positioned at the handing-over of vertical support frame two vertical plate
End.
By such scheme, described two set two dimension supervising devices respectively by the second cylinder head bolt be fixed on vertical support frame two vertical
On plate.
By such scheme, described positive plate, minus plate just to distribution, silicon pixel chip be centrally positioned in positive plate, minus plate it
Between (for ensure above silicon pixel chip electric fields uniform distribution).
By such scheme, described silicon pixel chip, based on CMOS integrated circuit, is made up of pixel array, and Pixel Dimensions is at micron
Magnitude, each pixel comprises top-level metallic, silicon pixel chip for directly collect space outerpace Gas drift electronics,
And producing charge signal, charge signal can be converted into analogue signal in pixel or digital signal reads.
By such scheme, described chip bonding circuit board includes 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, mould
Intend output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter；Described 3.3V voltage is changed
Circuit is connected with digital signal processing circuit, silicon pixel chip, digital to analog converter respectively, for for digital signal processing circuit,
Silicon pixel chip, digital to analog converter provide analog power and digital power；Described digital signal processing circuit is with silicon pixel chip even
Connect, for differential digital signal is converted into single ended digital signals, provide digital controlled signal for silicon pixel chip；Described digital-to-analogue
Transducer is connected with silicon pixel chip, for digital signal is changed into analogue signal, provides external reset electricity for silicon pixel chip
Pressure；Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit, for carrying for analog output voltage drive circuit
Voltage supplied；The analog output of silicon pixel chip is connected with MCX adapter through analog output voltage drive circuit, simulation output
Voltag driving circuit reads for the simulation providing voltage to drive, make silicon pixel chip for the simulation reading of silicon pixel chip and passes through
MCX adapter exports.
By such scheme, described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit be respectively adopted LM1117-3.3 chip,
LM1117-5.0 chip, described analog output voltage drive circuit uses THS4281 chip, and described digital to analog converter uses
DAC8568 chip, described digital signal processing circuit uses SN65LVDT14 chip.
Present invention also offers and a kind of carry out hadron line monitoring according to above-mentioned hadron line supervising device based on pixel sensing chip
Method, comprise the following steps:
1) producing electric field between minus plate and the positive plate of two set two dimension supervising devices, hadron line passes above silicon pixel chip
Gas, makes gas ionization produce rain of electrons, drifts about, by silicon pixel core under the effect of rain of electrons electric field above silicon pixel chip
Corresponding pixel collection on sheet；
2) according to the response of pixel in silicon pixel chip, the hadron line two-dimensional signal in silicon pixel chip place plane is obtained；
3) by make hadron line successively from two set two dimension supervising devices orthogonal silicon pixel chip pass over, rebuild strong
The distributed in three dimensions of sub-line.
By such scheme, described step 1) in hadron line passing over from silicon pixel chip, the most directly hit silicon pixel core
Sheet.
By such scheme, described step 1) described in positive plate, minus plate just to distribution, silicon pixel chip is centrally positioned in sun
Between pole plate, minus plate, for ensureing that the electric fields uniform distribution above silicon pixel chip (produces electricity between minus plate and positive plate
).
Beneficial effects of the present invention: the distributed in three dimensions information of hadron line can be monitored in real time, position resolution is high, radiation resistance,
The non-interception of line, it is not necessary to the gaseous environment of sealing.
Accompanying drawing explanation
Fig. 1 is the population structure schematic diagram of the present invention；
Fig. 2 is the structural representation that the present invention often overlaps two dimension supervising device；
Fig. 3 is the structured flowchart that chip bonding circuit board of the present invention is connected with silicon pixel chip；
Fig. 4 is the example structure schematic diagram of silicon pixel chip and peripheral circuit thereof in Fig. 3；
Fig. 5 is the example structure schematic diagram of 3.3V voltage conversion circuit in Fig. 3；
Fig. 6 is the example structure schematic diagram of 5V voltage conversion circuit in Fig. 3；
Fig. 7 is the example structure schematic diagram of analog output voltage drive circuit in Fig. 3；
Fig. 8 is the structural representation of MCX adapter in Fig. 3；
Fig. 9 is the example structure schematic diagram of digital to analog converter in Fig. 3；
Figure 10 is the example structure schematic diagram of digital signal processing circuit in Fig. 3；
Figure 11 is the electrical block diagram of the connector that silicon pixel chip is connected with outside input in Fig. 3；
In Fig. 1～Fig. 2,1-vertical support frame, 2-two dimension supervising device, 3-silicon pixel chip, 4-chip bonding circuit board, 5-
Positive plate, 6-minus plate, 7-alumina ceramic structure, 8-the first cylinder head bolt, 9-the second cylinder head bolt.
Detailed description of the invention
The present invention is described in detail with embodiment below in conjunction with the accompanying drawings.
Shown in reference Fig. 1～Fig. 2, hadron line supervising device based on pixel sensing chip of the present invention, hangs down including one
Straight bracket 1 and two overlaps independent two-dimentional supervising device 2, and vertical support frame 1 is formed by two vertical plates are affixed, two set two dimension monitoring dresses
Put 2 and be separately fixed on two vertical plates of vertical support frame 1 (outsides of two vertical plates)；Often set two dimension supervising device 2 is by silicon picture
Element chip 3, chip bonding circuit board 4, positive plate 5, minus plate 6 form, between described positive plate 5 and minus plate 6
Separated by alumina ceramic structure 7 and pass through the first fixing connection of cylinder head bolt 8；Described chip bonding circuit board 4
It is fixed on positive plate 5 by epoxide-resin glue, positive plate 5 ground connection；Described silicon pixel chip 3 is fixedly mounted on chip bonding
On circuit board 4.
Alumina ceramic structure 7 on described two set two dimension supervising devices 2 is separately positioned on the meta of positive plate 5 and minus plate 6
In the end that 1 liang of vertical plate of vertical support frame does not joins；Meanwhile, the chip bonding circuit of described two set two dimension supervising devices 2
Silicon pixel chip 3 on plate 4 is mutually perpendicular to arrange and be arranged between positive plate 5 and minus plate 6 being positioned at vertical support frame 1 liang
The end of vertical plate handing-over.
Described two set two dimension supervising devices 2 are fixed on two vertical plates of vertical support frame 1 by the second cylinder head bolt 9 respectively.
Described positive plate 5, minus plate 6 are just to distribution, and silicon pixel chip 3 is centrally positioned between positive plate 5, minus plate 6,
For ensureing the electric fields uniform distribution (producing electric field between minus plate 6 and positive plate 5) above silicon pixel chip 3.
Described silicon pixel chip 3, based on CMOS integrated circuit, is made up of pixel array, and Pixel Dimensions is in micron dimension, each
Pixel all comprises top-level metallic, and silicon pixel chip 3 is for directly collecting the electronics of the Gas drift of space outerpace and producing electricity
Lotus signal, charge signal can be converted into analogue signal in pixel or digital signal reads.In embodiment, silicon pixel chip 3 has
Body be patent publication No. be the silicon pixel chip of the open design of CN102931202A.
With reference to shown in Fig. 3～Fig. 4, described chip bonding circuit board 4 includes that 3.3V voltage conversion circuit, 5.0V voltage turn
Change circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter；Described 3.3V
Voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip 3, digital to analog converter respectively, is used for as digital signal
Circuit, silicon pixel chip, digital to analog converter offer analog power and digital power are provided；Described digital signal processing circuit and silicon
Pixel chip 3 connects, and for differential digital signal is converted into single ended digital signals, provides digital control for silicon pixel chip 3
Signal；Described digital to analog converter is connected with silicon pixel chip 3, for digital signal being changed into analogue signal, for silicon pixel core
Sheet 3 provides external reset voltage；Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit, for for simulating
Output voltage drive circuit provides voltage；The analog output of silicon pixel chip 3 is through analog output voltage drive circuit and MCX
Adapter connects, and analog output voltage drive circuit provides voltage to drive, make silicon picture for reading for the simulation of silicon pixel chip 3
The simulation of element chip 3 is read and is exported by MCX adapter.
Described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit be respectively adopted the LMS1117-3.3 chip shown in Fig. 5,
LM1117-5.0 chip shown in Fig. 6, described analog output voltage drive circuit uses the Texas Instrument (Texas shown in Fig. 7
Instruments) the THS4281 chip of company, the outfan of THS4281 chip is connected with the MCX adapter shown in Fig. 8,
Described digital to analog converter uses the DAC8568 chip shown in Fig. 9, and described digital signal processing circuit uses shown in Figure 10
SN65LVDT14 chip；Silicon pixel chip 3 enters through the connector shown in Figure 11 with outside and is connected.
Described silicon pixel chip 3 is fixed on chip bonding circuit board 4 by bonding technology, chip bonding circuit
Plate 4 is for providing analog power, digital power, digital controlled signal, external reset voltage for silicon pixel chip 3 and simulating defeated
Going out voltage to drive, the simulation of silicon pixel chip 3 conversion reads the MCX adapter output on chip bonding circuit board 4.
The method that present invention hadron based on pixel sensing chip line supervising device carries out hadron line monitoring, comprises the following steps:
1) producing electric field between minus plate 6 and the positive plate 5 of two set two dimension supervising devices 2, hadron line passes silicon pixel chip
Gas above in the of 3, it is ensured that hadron line passes over from silicon pixel chip 3, the most directly hits silicon pixel chip 3, makes gas
Ionization produces rain of electrons, drifts about under the effect of rain of electrons electric field above silicon pixel chip 3, by corresponding in silicon pixel chip 3
Pixel collection；Meanwhile, silicon pixel chip 3 is centrally positioned between positive plate 5, minus plate 6, is used for ensureing silicon pixel core
Electric fields uniform distribution above sheet 3；
2) according to the response of pixel in silicon pixel chip 3, the hadron line two-dimensional signal in silicon pixel chip 3 place plane is obtained；
3) by make hadron line successively from two set two dimension supervising devices 2 orthogonal silicon pixel chip 3 pass over, weight
Build the distributed in three dimensions of hadron line.
Last it should be noted that, above content is only in order to illustrate technical scheme, rather than to scope
Limit, simple modification that technical scheme is carried out by those of ordinary skill in the art or equivalent, all without departing from
The spirit and scope of technical solution of the present invention.
Claims (10)
1. hadron line supervising device based on pixel sensing chip, it is characterized in that, including the two-dimentional supervising device (2) that a vertical support frame (1) and two sets are independent, vertical support frame (1) is formed by two vertical plates are affixed, and two sets two dimension supervising device (2) are separately fixed on two vertical plates of vertical support frame (1)；Often set two dimension supervising device (2) is by silicon pixel chip (3), chip bonding circuit board (4), positive plate (5), minus plate (6) composition, is separated by alumina ceramic structure (7) and be connected by the first cylinder head bolt (8) is fixing between described positive plate (5) with minus plate (6)；Described chip bonding circuit board (4) is fixed on positive plate (5) by epoxide-resin glue, positive plate (5) ground connection；Described silicon pixel chip (3) is fixedly mounted on chip bonding circuit board (4).
Hadron line supervising device based on pixel sensing chip the most according to claim 1, it is characterized in that, the alumina ceramic structure (7) on described two sets two dimension supervising device (2) is separately positioned between positive plate (5) and minus plate (6) and is positioned at the end that vertical support frame (1) two vertical plate does not joins；Meanwhile, the silicon pixel chip (3) on chip bonding circuit board (4) of described two sets two dimension supervising device (2) is mutually perpendicular to arrange and be arranged between positive plate (5) and minus plate (6) to be positioned at the end of vertical support frame (1) two vertical plate handing-over.
Hadron line supervising device based on pixel sensing chip the most according to claim 1, it is characterised in that described two sets two dimension supervising device (2) are fixed on two vertical plates of vertical support frame (1) by the second cylinder head bolt (9) respectively.
Hadron line supervising device based on pixel sensing chip the most according to claim 1, it is characterised in that described positive plate (5), minus plate (6) are just to distribution, and silicon pixel chip (3) is centrally positioned between positive plate (5), minus plate (6).
Hadron line supervising device based on pixel sensing chip the most according to claim 1, it is characterized in that, described silicon pixel chip (3) is based on CMOS integrated circuit, it is made up of pixel array, Pixel Dimensions is in micron dimension, each pixel comprises top-level metallic, and electronics that silicon pixel chip (3) is come for the Gas drift directly collecting space outerpace also produces charge signal, and charge signal can be converted into analogue signal in pixel or digital signal reads.
Hadron line supervising device based on pixel sensing chip the most according to claim 1, it is characterized in that, described chip bonding circuit board (4) includes 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter；Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip (3), digital to analog converter respectively；Described digital signal processing circuit is connected with silicon pixel chip (3)；Described digital to analog converter is connected with silicon pixel chip (3)；Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit；The analog output of silicon pixel chip (3) is connected with MCX adapter through analog output voltage drive circuit.
Hadron line supervising device based on pixel sensing chip the most according to claim 6, it is characterized in that, described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit are respectively adopted LM1117-3.3 chip, LM1117-5.0 chip, described analog output voltage drive circuit uses THS4281 chip, described digital to analog converter uses DAC8568 chip, and described digital signal processing circuit uses SN65LVDT14 chip.
8. the method carrying out hadron line monitoring according to the hadron line supervising device based on pixel sensing chip described in any one of the claims 1 ~ 7, it is characterised in that comprise the following steps:
1) electric field is produced between minus plate (6) and the positive plate (5) of two sets two dimension supervising device (2), hadron line is through the gas of silicon pixel chip (3) top, gas ionization is made to produce rain of electrons, rain of electrons drifts about under the effect of the electric field of silicon pixel chip (3) top, by the upper corresponding pixel collection of silicon pixel chip (3)；
2) according to the response of the upper pixel of silicon pixel chip (3), the hadron line two-dimensional signal in silicon pixel chip (3) place plane is obtained；
3) by making hadron line pass over from the two orthogonal silicon pixel chip (3) of set two dimension supervising devices (2) successively, the distributed in three dimensions of reconstruction hadron line.
The method that hadron line supervising device based on pixel sensing chip the most according to claim 8 carries out hadron line monitoring, it is characterized in that, hadron line passing over from silicon pixel chip (3) in described step 1), the most directly hits silicon pixel chip (3).
The method that hadron line supervising device based on pixel sensing chip the most according to claim 8 carries out hadron line monitoring, it is characterized in that, positive plate (5) described in described step 1), minus plate (6) are just to distribution, silicon pixel chip (3) is centrally positioned between positive plate (5), minus plate (6), is used for ensureing the electric fields uniform distribution of silicon pixel chip (3) top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410289229.1A CN104096318B (en) | 2014-06-24 | 2014-06-24 | Hadron line supervising device based on pixel sensing chip and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410289229.1A CN104096318B (en) | 2014-06-24 | 2014-06-24 | Hadron line supervising device based on pixel sensing chip and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104096318A CN104096318A (en) | 2014-10-15 |
| CN104096318B true CN104096318B (en) | 2016-08-17 |
Family
ID=51665104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410289229.1A Active CN104096318B (en) | 2014-06-24 | 2014-06-24 | Hadron line supervising device based on pixel sensing chip and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104096318B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841845B (en) * | 2016-12-15 | 2021-06-29 | 华中师范大学 | Method and system for testing radiation resistance of electronic device |
| CN111077561B (en) * | 2019-12-18 | 2022-02-18 | 中国科学院近代物理研究所 | Residual gas charged particle beam monitoring device and method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6512942B1 (en) * | 1997-11-24 | 2003-01-28 | Computerized Medical Systems, Inc. | Radiation therapy and real time imaging of a patient treatment region |
| EP1182510B1 (en) * | 2000-08-25 | 2006-04-12 | ASML Netherlands B.V. | Lithographic projection apparatus |
| WO2006005059A3 (en) * | 2004-06-30 | 2006-05-18 | Lexitek Inc | High resolution proton beam monitor |
| WO2008119777A1 (en) * | 2007-03-30 | 2008-10-09 | Ion Beam Applications S.A. | Device and method for online quality assurance in hadron therapy |
| CN203017594U (en) * | 2012-12-31 | 2013-06-26 | 佛山顺德恒健强子医疗科技有限公司 | Hadron treatment device |
-
2014
- 2014-06-24 CN CN201410289229.1A patent/CN104096318B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6512942B1 (en) * | 1997-11-24 | 2003-01-28 | Computerized Medical Systems, Inc. | Radiation therapy and real time imaging of a patient treatment region |
| EP1182510B1 (en) * | 2000-08-25 | 2006-04-12 | ASML Netherlands B.V. | Lithographic projection apparatus |
| WO2006005059A3 (en) * | 2004-06-30 | 2006-05-18 | Lexitek Inc | High resolution proton beam monitor |
| WO2008119777A1 (en) * | 2007-03-30 | 2008-10-09 | Ion Beam Applications S.A. | Device and method for online quality assurance in hadron therapy |
| CN203017594U (en) * | 2012-12-31 | 2013-06-26 | 佛山顺德恒健强子医疗科技有限公司 | Hadron treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104096318A (en) | 2014-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jun et al. | Fully integrated silicon probes for high-density recording of neural activity | |
| Vykydal et al. | USB interface for Medipix2 pixel device enabling energy and position-sensitive detection of heavy charged particles | |
| CN100484468C (en) | High sensitivity open type magnetic induction image measuring device | |
| CN104096318B (en) | Hadron line supervising device based on pixel sensing chip and method | |
| CN107495968A (en) | The device with anaesthetizing is fixed for mouse magnetic resonance | |
| CN107924796A (en) | Portable X ray generating means with electric field transmitting X radiographic sources | |
| CN105943071A (en) | X-ray ct imaging system | |
| CN206400009U (en) | electromagnetic field on-line monitoring system | |
| CN201194811Y (en) | Adjustable X-ray protection screen | |
| CN110812693A (en) | Multichannel high-frequency non-invasive accurate positioning nerve stimulation system | |
| CN109431503A (en) | A kind of miniature EIT device of wireless transmission | |
| CN203929638U (en) | Pulp density tester | |
| CN208954366U (en) | A kind of medical image instructional device | |
| CN203447299U (en) | PET-CT device with movable PET portion | |
| CN209221351U (en) | Particle therapy devices horizontal beam flow integrated morning examines instrument pedestal | |
| Pettinato et al. | Compact embedded detection electronics for accurate dose measurements of MV pulsed X-rays and electrons | |
| CN102783968A (en) | Micro-dose medical CBS-CT machine used on site | |
| CN204548919U (en) | A kind of pathology diagnosis and treatment sampling plate | |
| CN107894536A (en) | A kind of integrated power frequency electromagnet field sensor and on-Line Monitor Device | |
| CN206479420U (en) | A kind of rebound method surveys area's arrangement apparatus | |
| CN106362306B (en) | A kind of portable multi-channel laser therapeutic system | |
| CN210784386U (en) | Medical scanning bed with adjustable structure | |
| CN108853758A (en) | Particle therapy devices horizontal beam flow integrated morning examines instrument pedestal | |
| CN205107712U (en) | Special gamma camera of thyroid gland based on CZT | |
| CN104667436B (en) | Wave beam monitoring system and particle beam irradiation system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |