CN104096318A - Hadron beam monitoring device and method based on pixel sensor chip - Google Patents
Hadron beam monitoring device and method based on pixel sensor chip Download PDFInfo
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- CN104096318A CN104096318A CN201410289229.1A CN201410289229A CN104096318A CN 104096318 A CN104096318 A CN 104096318A CN 201410289229 A CN201410289229 A CN 201410289229A CN 104096318 A CN104096318 A CN 104096318A
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Abstract
The invention provides a hadron beam monitoring device based on a pixel sensor chip. The hadron beam monitoring device comprises a vertical support and two independent two-dimensional monitoring devices. Two two-dimensional monitoring devices are fixed on two vertical plates of the vertical support. Each two-dimensional monitoring device is composed of a silicon pixel chip, a chip bonding circuit board, an anode plate and a cathode plate. A device monitoring method comprises the steps that a hadron beam passes through gas above a silicon pixel chip, so that the gas is ionized to produce an electron cluster; the electron cluster drifts under the action of an electric field above the silicon pixel chip, and is collected by a corresponding pixel on the silicon pixel chip; according to the pixel response on the silicon pixel chip, the two-dimensional information of the plane of the hadron beam on the silicon pixel chips is acquired; the hadron beam successively passes through the spaces above the silicon pixel chips which are mutually vertical on two two-dimensional monitoring devices; and the three-dimensional distribution of the hadron beam is reconstructed. According to the invention, the three-dimensional distribution information of the hadron beam is monitored in real time, and the device and the method have the advantages of beam non-blocking performance, radiation resistance and high position resolution.
Description
Technical field
The present invention relates to hadron therapy field, be specifically related to a kind of hadron line supervising device and method based on pixel sensing chip, for monitoring in real time hadron line.
Background technology
Hadron can not release energy after entering material at once in a large number, and the position of only stopping soon at hadron just can discharge its most of energy, forms a sharp-pointed energy peak-bragg peak, is called bragg peak effect.According to bragg peak effect, with hadron substitute photon, electronics carries out oncotherapy, can avoid tumor health tissues around, drop into more radiation dose, and electronics, photon has stronger biological effect relatively to tumor.
At present, hadron therapy has two kinds of beam delivery technology: line scattering and line scanning.Line scattering technology is to disperse line with scattering object, and the dose distribution after the collimator that re-uses customization makes scattering with compensator is consistent with target tumor volume.Line scanning technique is under the control of computer, uses Magnet to handle a narrow monoenergetic line by volume elements scanning target tumor.Because line scattering technology need to be by patient's equipment for customizing, and can produce a large amount of secondarys in scattering process, so line scanning technique has more advantage: convenient, little to healthy histologic lesion.Use the hadron therapy of line scanning technique to need intensity and the position distribution of monitoring line in real time, and feed back in time line information to control end, control end halved tie stream is adjusted.
Summary of the invention
The technical problem to be solved in the present invention is, need the monitoring intensity of line and the problem of position distribution in real time for the hadron therapy of existing line scanning technique, a kind of hadron line supervising device and method based on pixel sensing chip is provided, use silicon pixel chip to monitor in real time hadron line, there is the non-interception of line, radiation resistance and high position resolution.
The present invention for solving the problems of the technologies described above adopted technical scheme is:
Hadron line supervising device based on pixel sensing chip, comprises a vertical support frame and independently two-dimentional supervising device of two covers, and vertical support frame forms by two vertical plates are affixed, and the two-dimentional supervising device of two covers is separately fixed on two vertical plates of vertical support frame; The two-dimentional supervising device of every cover, by silicon pixel chip, chip bonding circuit board, positive plate, minus plate composition, is separated and is fixedly connected with by the first cylinder head bolt by alumina ceramic structure between described positive plate and minus plate; Described chip bonding circuit board is fixed on positive plate by epoxide-resin glue, positive plate ground connection; Described silicon pixel chip is fixedly mounted on chip bonding circuit board.
Press such scheme, the alumina ceramic structure of described two covers on two-dimentional supervising device is separately positioned on and between positive plate and minus plate, is positioned at the end that vertical support frame two vertical plates do not join; Meanwhile, the silicon pixel chip on the chip bonding circuit board of the two-dimentional supervising device of described two cover is arranged vertically and is all arranged on the end that is positioned at vertical support frame two vertical plate handing-over between positive plate and minus plate mutually.
Press such scheme, the two-dimentional supervising device of described two cover is fixed on two vertical plates of vertical support frame by the second cylinder head bolt respectively.
Press such scheme, described positive plate, minus plate are just to distributing, and silicon pixel chip is arranged between two parties between positive plate, minus plate and (is uniformly distributed for the electric field that ensures silicon pixel chip top).
Press such scheme, described silicon pixel chip is based on CMOS integrated circuit, formed by pixel array, Pixel Dimensions is in micron dimension, each pixel comprises top-level metallic, the electronics that silicon pixel chip comes for the direct Gas drift of collecting space outerpace also produces charge signal, and charge signal can convert analogue signal in pixel or digital signal is read.
Press such scheme, described chip bonding circuit board comprises 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter; Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip, digital to analog converter respectively, is used to digital signal processing circuit, silicon pixel chip, digital to analog converter that analog power and digital power are provided; Described digital signal processing circuit is connected with silicon pixel chip, for differential digital signal being converted to single-ended digital signal, for silicon pixel chip provides digital controlled signal; Described digital to analog converter is connected with silicon pixel chip, for digital signal is changed into analogue signal, for silicon pixel chip provides external reset voltage; Described 5.0V voltage conversion circuit is connected, is used to analog output voltage drive circuit that voltage is provided with analog output voltage drive circuit; The analog output of silicon pixel chip is connected with MCX adapter through analog output voltage drive circuit, and the simulation that analog output voltage drive circuit is used to the simulation of silicon pixel chip to read provides voltage to drive, make silicon pixel chip is read by MCX adapter and exported.
Press such scheme, described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit adopt respectively LM1117-3.3 chip, LM1117-5.0 chip, described analog output voltage drive circuit adopts THS4281 chip, described digital to analog converter adopts DAC8568 chip, and described digital signal processing circuit adopts SN65LVDT14 chip.
The present invention also provides a kind of method of carrying out the monitoring of hadron line according to the above-mentioned hadron line supervising device based on pixel sensing chip, comprises the following steps:
1) between the minus plate of the two-dimentional supervising device of two covers and positive plate, produce electric field, hadron line is through the gas of silicon pixel chip top, make gas ionization produce rain of electrons, rain of electrons drifts about under the effect of the electric field above silicon pixel chip, is collected by corresponding pixel on silicon pixel chip;
2), according to the response of pixel on silicon pixel chip, obtain the two-dimensional signal of hadron line in silicon pixel chip place plane;
3) by hadron line is passed above orthogonal silicon pixel chip successively from two cover two dimension supervising devices, rebuild the distributed in three dimensions of hadron line.
Press such scheme, described step 1) in hadron line pass from the top of silicon pixel chip, directly do not hit silicon pixel chip.
Press such scheme, described step 1) described in positive plate, minus plate just to distributing, silicon pixel chip is arranged between positive plate, minus plate between two parties, is uniformly distributed (between minus plate and positive plate, producing electric field) for the electric field that ensures silicon pixel chip top.
Beneficial effect of the present invention: can monitor in real time the distributed in three dimensions information of hadron line, position resolution is high, radiation resistance, the non-interception of line, does not need the gaseous environment sealing.
Brief description of the drawings
Fig. 1 is population structure schematic diagram of the present invention;
Fig. 2 is the structural representation of the two-dimentional supervising device of the every cover of the present invention;
Fig. 3 is the structured flowchart that chip bonding circuit board of the present invention and silicon pixel chip are connected;
Fig. 4 is the example structure schematic diagram of silicon pixel chip and peripheral circuit thereof in Fig. 3;
Fig. 5 is the example structure schematic diagram of 3.3V voltage conversion circuit in Fig. 3;
Fig. 6 is the example structure schematic diagram of 5V voltage conversion circuit in Fig. 3;
Fig. 7 is the example structure schematic diagram of analog output voltage drive circuit in Fig. 3;
Fig. 8 is the structural representation of MCX adapter in Fig. 3;
Fig. 9 is the example structure schematic diagram of digital to analog converter in Fig. 3;
Figure 10 is the example structure schematic diagram of digital signal processing circuit in Fig. 3;
Figure 11 is the electrical block diagram of the connector that in Fig. 3, silicon pixel chip is connected with outside input;
In Fig. 1～Fig. 2,1-vertical support frame, 2-two dimension supervising device, 3-silicon pixel chip, 4-chip bonding circuit board, 5-positive plate, 6-minus plate, 7-alumina ceramic structure, 8-the first cylinder head bolt, 9-the second cylinder head bolt.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in detail.
Shown in Fig. 1～Fig. 2, hadron line supervising device based on pixel sensing chip of the present invention, comprise a vertical support frame 1 and independently two-dimentional supervising device 2 of two covers, vertical support frame 1 forms by two vertical plates are affixed, and the two-dimentional supervising device 2 of two covers is separately fixed on two vertical plates of vertical support frame 1 (outsides of two vertical plates); The two-dimentional supervising device 2 of every cover forms by silicon pixel chip 3, chip bonding circuit board 4, positive plate 5, minus plate 6, is separated and be fixedly connected with by the first cylinder head bolt 8 between described positive plate 5 and minus plate 6 by alumina ceramic structure 7; Described chip bonding circuit board 4 is fixed on positive plate 5 by epoxide-resin glue, positive plate 5 ground connection; Described silicon pixel chip 3 is fixedly mounted on chip bonding circuit board 4.
The alumina ceramic structure 7 of described two covers on two-dimentional supervising device 2 is separately positioned on and between positive plate 5 and minus plate 6, is positioned at the end that 1 liang of vertical plate of vertical support frame does not join; Meanwhile, the silicon pixel chip 3 on the chip bonding circuit board 4 of the two-dimentional supervising device 2 of described two cover is arranged vertically and is all arranged on the end that is positioned at 1 liang of vertical plate handing-over of vertical support frame between positive plate 5 and minus plate 6 mutually.
The two-dimentional supervising device 2 of described two cover is fixed on two vertical plates of vertical support frame 1 by the second cylinder head bolt 9 respectively.
Described positive plate 5, minus plate 6 are just to distributing, and silicon pixel chip 3 is arranged between positive plate 5, minus plate 6 between two parties, for ensureing that the electric field of silicon pixel chip 3 tops is uniformly distributed (producing electric field between minus plate 6 and positive plate 5).
Described silicon pixel chip 3 is based on CMOS integrated circuit, formed by pixel array, Pixel Dimensions is in micron dimension, each pixel comprises top-level metallic, the electronics that silicon pixel chip 3 comes for the direct Gas drift of collecting space outerpace also produces charge signal, and charge signal can convert analogue signal in pixel or digital signal is read.In embodiment, to be specially patent publication No. be the silicon pixel chip that CN102931202A openly designs to silicon pixel chip 3.
Shown in Fig. 3～Fig. 4, described chip bonding circuit board 4 comprises 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter; Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip 3, digital to analog converter respectively, is used to digital signal processing circuit, silicon pixel chip, digital to analog converter that analog power and digital power are provided; Described digital signal processing circuit is connected with silicon pixel chip 3, for differential digital signal being converted to single-ended digital signal, for silicon pixel chip 3 provides digital controlled signal; Described digital to analog converter is connected with silicon pixel chip 3, for digital signal is changed into analogue signal, for silicon pixel chip 3 provides external reset voltage; Described 5.0V voltage conversion circuit is connected, is used to analog output voltage drive circuit that voltage is provided with analog output voltage drive circuit; The analog output of silicon pixel chip 3 is connected with MCX adapter through analog output voltage drive circuit, and the simulation that analog output voltage drive circuit is used to the simulation of silicon pixel chip 3 to read provides voltage to drive, make silicon pixel chip 3 is read by MCX adapter and exported.
Described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit adopt respectively the LM1117-5.0 chip shown in the LMS1117-3.3 chip shown in Fig. 5, Fig. 6, described analog output voltage drive circuit adopts the THS4281 chip of the company of Texas Instrument (Texas Instruments) shown in Fig. 7, the outfan of THS4281 chip is connected with the MCX adapter shown in Fig. 8, described digital to analog converter adopts the DAC8568 chip shown in Fig. 9, and described digital signal processing circuit adopts the SN65LVDT14 chip shown in Figure 10; Silicon pixel chip 3 is connected by the connector shown in Figure 11 with outside input.
Described silicon pixel chip 3 is fixed on chip bonding circuit board 4 by bonding technology, chip bonding circuit board 4 is used to silicon pixel chip 3 to provide analog power, digital power, digital controlled signal, external reset voltage and analog output voltage to drive, and the simulation that silicon pixel chip 3 is changed is read through the MCX adapter output on chip bonding circuit board 4.
The present invention is based on the method that the hadron line supervising device of pixel sensing chip carries out the monitoring of hadron line, comprise the following steps:
1) between the minus plate 6 of the two-dimentional supervising device 2 of two covers and positive plate 5, produce electric field, hadron line is through the gas of silicon pixel chip 3 tops, ensure that hadron line passes from the top of silicon pixel chip 3, directly do not hit silicon pixel chip 3, make gas ionization produce rain of electrons, rain of electrons drifts about under the effect of the electric field above silicon pixel chip 3, is collected by corresponding pixel on silicon pixel chip 3; Meanwhile, silicon pixel chip 3 is arranged between positive plate 5, minus plate 6 between two parties, is uniformly distributed for the electric field that ensures silicon pixel chip 3 tops;
2), according to the response of pixel on silicon pixel chip 3, obtain the two-dimensional signal of hadron line in silicon pixel chip 3 place planes;
3) by make hadron line successively from two covers two dimensions supervising devices 2 orthogonal silicon pixel chip 3 tops pass, rebuild the distributed in three dimensions of hadron line.
Finally should be noted that; above content is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; the simple modification that those of ordinary skill in the art carries out technical scheme of the present invention or be equal to replacement, does not all depart from essence and the scope of technical solution of the present invention.
Claims (10)
1. the hadron line supervising device based on pixel sensing chip, it is characterized in that, comprise a vertical support frame (1) and independently two-dimentional supervising device (2) of two covers, vertical support frame (1) forms by two vertical plates are affixed, and the two two-dimentional supervising devices of cover (2) are separately fixed on two vertical plates of vertical support frame (1); The two-dimentional supervising device of every cover (2), by silicon pixel chip (3), chip bonding circuit board (4), positive plate (5), minus plate (6) composition, is separated, is also fixedly connected with by the first cylinder head bolt (8) by alumina ceramic structure (7) between described positive plate (5) and minus plate (6); It is upper that described chip bonding circuit board (4) is fixed on positive plate (5) by epoxide-resin glue, positive plate (5) ground connection; Described silicon pixel chip (3) is fixedly mounted on chip bonding circuit board (4).
2. the hadron line supervising device based on pixel sensing chip according to claim 1, it is characterized in that, the alumina ceramic structure (7) on described two covers two-dimentional supervising devices (2) is separately positioned on and between positive plate (5) and minus plate (6), is positioned at the end that vertical support frame (1) two vertical plate does not join; Meanwhile, the silicon pixel chip (3) on the chip bonding circuit board (4) of the described two two-dimentional supervising devices of cover (2) is arranged vertically and is all arranged on the end that is positioned at vertical support frame (1) two vertical plate handing-over between positive plate (5) and minus plate (6) mutually.
3. the hadron line supervising device based on pixel sensing chip according to claim 1, it is characterized in that, the described two two-dimentional supervising devices of cover (2) are fixed on two vertical plates of vertical support frame (1) by the second cylinder head bolt (9) respectively.
4. the hadron line supervising device based on pixel sensing chip according to claim 1, it is characterized in that, described positive plate (5), minus plate (6) are just to distributing, and silicon pixel chip (3) is arranged between positive plate (5), minus plate (6) between two parties.
5. the hadron line supervising device based on pixel sensing chip according to claim 1, it is characterized in that, described silicon pixel chip (3) is based on CMOS integrated circuit, formed by pixel array, Pixel Dimensions is in micron dimension, each pixel comprises top-level metallic, and the electronics that silicon pixel chip (3) comes for the direct Gas drift of collecting space outerpace also produces charge signal, and charge signal can convert analogue signal in pixel or digital signal is read.
6. the hadron line supervising device based on pixel sensing chip according to claim 1, it is characterized in that, described chip bonding circuit board (4) comprises 3.3V voltage conversion circuit, 5.0V voltage conversion circuit, analog output voltage drive circuit, digital to analog converter, digital signal processing circuit and MCX adapter; Described 3.3V voltage conversion circuit is connected with digital signal processing circuit, silicon pixel chip (3), digital to analog converter respectively; Described digital signal processing circuit is connected with silicon pixel chip (3); Described digital to analog converter is connected with silicon pixel chip (3); Described 5.0V voltage conversion circuit is connected with analog output voltage drive circuit; The analog output of silicon pixel chip (3) is connected with MCX adapter through analog output voltage drive circuit.
7. the hadron line supervising device based on pixel sensing chip according to claim 6, it is characterized in that, described 3.3V voltage conversion circuit, 5.0V voltage conversion circuit adopt respectively LM1117-3.3 chip, LM1117-5.0 chip, described analog output voltage drive circuit adopts THS4281 chip, described digital to analog converter adopts DAC8568 chip, and described digital signal processing circuit adopts SN65LVDT14 chip.
8. a method of carrying out the monitoring of hadron line according to the above-mentioned hadron line supervising device based on pixel sensing chip, is characterized in that, comprises the following steps:
1) between the minus plate (6) of the two two-dimentional supervising devices of cover (2) and positive plate (5), produce electric field, hadron line is through the gas of silicon pixel chip (3) top, make gas ionization produce rain of electrons, rain of electrons drifts about under the effect of the electric field of silicon pixel chip (3) top, is collected by the upper corresponding pixel of silicon pixel chip (3);
2) according to the response of the upper pixel of silicon pixel chip (3), obtain the two-dimensional signal of hadron line in silicon pixel chip (3) place plane;
3) by hadron line is passed above orthogonal silicon pixel chip (3) successively from two cover two dimension supervising devices (2), rebuild the distributed in three dimensions of hadron line.
9. the method that the hadron line supervising device based on pixel sensing chip according to claim 8 carries out the monitoring of hadron line, it is characterized in that, described step 1) in hadron line pass from the top of silicon pixel chip (3), directly do not hit silicon pixel chip (3).
10. the method that the hadron line supervising device based on pixel sensing chip according to claim 8 carries out the monitoring of hadron line, it is characterized in that, described step 1) described in positive plate (5), minus plate (6) just to distributing, silicon pixel chip (3) is arranged between positive plate (5), minus plate (6) between two parties, is uniformly distributed for the electric field that ensures silicon pixel chip (3) top.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106841845A (en) * | 2016-12-15 | 2017-06-13 | 华中师范大学 | A kind of electronic device radiation resistance method of testing and system |
| CN111077561A (en) * | 2019-12-18 | 2020-04-28 | 中国科学院近代物理研究所 | Residual gas charged particle beam monitoring device and method thereof |
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| WO2006005059A2 (en) * | 2004-06-30 | 2006-01-12 | Lexitek, Inc. | High resolution proton beam monitor |
| EP1182510B1 (en) * | 2000-08-25 | 2006-04-12 | ASML Netherlands B.V. | Lithographic projection apparatus |
| WO2008119777A1 (en) * | 2007-03-30 | 2008-10-09 | Ion Beam Applications S.A. | Device and method for online quality assurance in hadron therapy |
| CN203017594U (en) * | 2012-12-31 | 2013-06-26 | 佛山顺德恒健强子医疗科技有限公司 | Hadron treatment device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6512942B1 (en) * | 1997-11-24 | 2003-01-28 | Computerized Medical Systems, Inc. | Radiation therapy and real time imaging of a patient treatment region |
| EP1182510B1 (en) * | 2000-08-25 | 2006-04-12 | ASML Netherlands B.V. | Lithographic projection apparatus |
| WO2006005059A2 (en) * | 2004-06-30 | 2006-01-12 | Lexitek, Inc. | High resolution proton beam monitor |
| WO2008119777A1 (en) * | 2007-03-30 | 2008-10-09 | Ion Beam Applications S.A. | Device and method for online quality assurance in hadron therapy |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106841845A (en) * | 2016-12-15 | 2017-06-13 | 华中师范大学 | A kind of electronic device radiation resistance method of testing and system |
| CN106841845B (en) * | 2016-12-15 | 2021-06-29 | 华中师范大学 | Method and system for testing radiation resistance of electronic device |
| CN111077561A (en) * | 2019-12-18 | 2020-04-28 | 中国科学院近代物理研究所 | Residual gas charged particle beam monitoring device and method thereof |
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