CN104092441B - Monolithic integration ultraviolet light receiver front end amplifier circuit based on 4H-SiC substrate - Google Patents
Monolithic integration ultraviolet light receiver front end amplifier circuit based on 4H-SiC substrate Download PDFInfo
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Abstract
The invention discloses a monolithic integration ultraviolet receiver front-end amplifying circuit based on a 4H-SiC substrate, which is characterized by comprising the following components in series connection in sequence and integrated on the 4H-SiC substrate: the RGC input circuit is designed by adopting a 4H-SiC MESFET device, and a common-gate amplifier circuit and a common-source amplifier circuit are cascaded to form feedback; further comprising: and the two ends of the negative feedback circuit are respectively connected with the input end of the voltage gain circuit and the output end of the output circuit. The invention has the advantages that: the dominant pole of the circuit is effectively transferred through the RGC input circuit, the voltage gain circuit and the output circuit, and the circuit bandwidth is expanded; based on the 4H-SiC substrate, the high-temperature-resistant high-power-resistant radiation-resistant; the circuit has wider bandwidth and low circuit noise, is suitable for ultraviolet light communication, and can be applied to the fields of satellite detection and the like.
Description
Technical Field
The invention relates to an ultraviolet receiver front-end amplification circuit, in particular to a monolithic integration ultraviolet receiver front-end amplification circuit based on a 4H-SiC substrate, and belongs to the technical field of electricity.
Background
With the continuous development of the information industry, optical communication networks are becoming more and more important. The dependence on large transmission capacities and the ever increasing speed make it increasingly more attractive to use light as a carrier for information dissemination. Optoelectronic integrated circuits have also come to be produced in which photonic devices and electronic devices are integrated on a single substrate. The optoelectronic integrated circuit has the advantages of small volume, light weight, low noise, high reliability, low integrated inductance and capacitance, and the like, so that the optoelectronic integrated circuit plays an increasingly important role in the fields of telecommunication systems, computer systems, military systems, optical information processing systems, and the like.
In recent years, the ultraviolet detection technology has been developed rapidly and gradually becomes another photoelectric comprehensive technology for both military use and civil use. Military aspects, namely missile early warning, missile guidance, ultraviolet communication and the like; the method is mainly applied to the fields of measuring the ultraviolet content in the air, combustion engineering, ultraviolet water purification treatment and the like in the civil field. With the further improvement of the technology, the application prospect and the market of the ultraviolet detection technology are wider, and the ultraviolet detection technology becomes a hot spot for the research and development of all countries in the world.
Optical receivers for ultraviolet detection have gained widespread attention. Further, optoelectronic integrated circuits using ultraviolet light as background have attracted much interest, and how to integrate photonic devices and electronic devices of optical transmitters or receivers and other parts in a system on the same chip has become a hot point of research. The monolithic integrated device has incomparable advantages in the aspects of performance, reliability and the like compared with the traditional circuit. And because the ultraviolet detection technology is generally applied to severe environments such as aerospace, artificial satellites, space detection and the like, the used materials are required to have the capability of working under the conditions of high temperature, high frequency, high power, high irradiation and the like. The third generation semiconductor has unique advantages, shows good characteristics in the aspects of high temperature and high power, and has attracted much attention of people. The SiC material is an ideal material for manufacturing high temperature resistance, corrosion resistance and radiation resistance due to the large forbidden band width, and has great potential for solving the problems of high temperature, high power and extreme environment. In addition, the high cut-off frequency and the large breakdown voltage characteristic also make the application of the optical receiver preamplifier have good advantages. The design of SiC-based optical receiver modules is therefore of great significance. However, no mature circuit model is available for circuit design in both optical devices and SiC devices, and if analog analysis is to be performed on optoelectronic integrated circuits (OEICs) by using a microelectronic circuit simulation method, an equivalent circuit model thereof needs to be established first.
In the overall optical receiver system, the preamplifier is the most critical component, which determines the sensitivity and bandwidth of the overall receiver system. The function of the preamplifier is to convert the current signal output by the light detector into a voltage signal. Because the current signal output by the photoelectric detector is very small, requirements are made on the bandwidth and noise of the preamplifier, and generally methods for improving the bandwidth include inductive peaking, common source input and the like. However, these methods have certain disadvantages, such as: the use of inductive peaking techniques can result in large chip areas, while the introduction of inductance can increase the delay of circuit signals, and inductive peaking techniques are not suitable for integration. The common source stage input can improve the noise performance and linearity of the circuit, but has poor effect of inhibiting the influence of input capacitance.
Disclosure of Invention
The invention aims to provide a monolithic integrated ultraviolet light receiver front-end amplifying circuit based on a 4H-SiC substrate, which has a simple structure, wider bandwidth and lower noise.
In order to achieve the above object, the present invention adopts the following technical solutions:
a monolithic integration ultraviolet light receiver front end amplifier circuit based on 4H-SiC substrate, characterized by comprising:
ultraviolet detector U1: the anode is connected with the input end of the RGC input circuit, the cathode is connected with a DC voltage source V2For converting the received ultraviolet light signal into a current signal,
RGC input circuit: input end and ultraviolet detector U1The anode of the voltage gain circuit is connected, the output end of the voltage gain circuit is connected with the input end of the voltage gain circuit, and the voltage gain circuit is used for connecting the ultraviolet detector U1The transmitted current signal is converted into a voltage signal, and the ultraviolet detector U is shielded1The capacitance of the capacitor, the bandwidth of the circuit is expanded,
a voltage gain circuit: the input end is connected with the output end of the RGC input circuit, the output end is connected with the input end of the output circuit, and is used for further amplifying the signal output by the RGC input circuit and improving the gain of the output signal,
an output circuit: the input end is connected with the output end of the voltage gain circuit and is used for driving the subsequent circuit and isolating the internal circuit from the subsequent circuit,
the ultraviolet detector U1The RGC input circuit, the voltage gain circuit and the output circuit are integrated on the 4H-SiC substrate.
The monolithic integrated ultraviolet receiver front-end amplifier circuit based on the 4H-SiC substrate is characterized in that the RGC input circuit is designed by adopting a 4H-SiC MESFET device, a common-gate amplifier circuit and a common-source amplifier circuit are cascaded to form feedback,
the common-gate amplifier circuit is composed of a resistor Rd、RsAnd a transistor M2Composition of the aforementioned resistor RdOne end of which is connected to the voltage VDD and the other end of which is connected to the transistor M2The drain terminal of the resistor R is connected withsAnd a terminal of the transistor M2Is connected to the source terminal and the other end is grounded, the transistor M2The source terminal and the drain terminal of the transistor M are respectively the input terminal and the output terminal of the common grid amplifying circuit2The gate terminal of the amplifier passes through a resistor R in the common source stage amplifying circuitLConnecting with a voltage VDD to form a common gate structure,
the common source stage amplifying circuit is composed of a resistor RLAnd a transistor M1Composition of the transistor M1Source terminal of the resistor R is grounded, drain terminal of the resistor R is grounded, and the resistor R is connected with the drain terminal of the resistor RLIs connected to a resistor RLIs connected to a voltage VDD, the aforementioned transistor M1The gate end and the drain end of the amplifier are respectively the input end and the output end of the common source amplifier circuit,
the input end and the output end of the common-source amplification circuit are respectively connected with the input end of the common-gate amplification circuit and the transistor M2The gate terminal of the gate is connected with,
the input end and the output end of the common-gate amplifying circuit are respectively the input end and the output end of the RGC input circuit.
The monolithic integrated ultraviolet receiver front-end amplification circuit based on the 4H-SiC substrate is characterized in that the voltage gain circuit is composed of a resistor R1、R2And a transistor M3The resistance R1One end of which is connected to the voltage VDD and the other end of which is connected to the transistor M3Is connected to the drain terminal of the resistor R2And a terminal of the transistor M3Is connected to the source terminal and the other end is grounded, the transistor M3The gate terminal and the drain terminal of the voltage gain circuit are respectively an input terminal and an output terminal of the voltage gain circuit.
The monolithic integration ultraviolet light receiver front-end amplifying circuit based on the 4H-SiC substrate is characterized in that the output circuit is composed of a transistor M4And a resistor R having one end connected to the transistor M4Is connected to the source, the other end is grounded, and the transistor M is connected to the source4Is connected to a voltage VDD, a transistor M4Gate terminal ofAnd the source end is the input end and the output end of the output circuit respectively.
The monolithic integration ultraviolet receiver front-end amplification circuit based on the 4H-SiC substrate is characterized in that the ultraviolet detector is a 4H-SiC ultraviolet detector.
The monolithic integration ultraviolet receiver front-end amplification circuit based on the 4H-SiC substrate is characterized in that the 4H-SiC ultraviolet detector is of an MSM structure and is composed of two Schottky barrier diodes which are arranged back to back.
The monolithic integrated ultraviolet receiver front-end amplification circuit based on the 4H-SiC substrate is characterized by further comprising: a negative feedback circuit for the negative feedback circuit,
the aforementioned negative feedback circuit resistance RFThe resistance RFThe two ends of the voltage gain circuit are respectively connected with the input end of the voltage gain circuit and the output end of the output circuit, and the effect of stabilizing output signals is achieved.
The invention has the advantages that:
1. the dominant pole of the circuit is effectively transferred through the RGC input circuit, the voltage gain circuit and the output circuit, and the circuit bandwidth is expanded;
2. based on the 4H-SiC substrate, the high-temperature-resistant high-power-resistant radiation-resistant;
3. the circuit has wider bandwidth and low circuit noise, is suitable for ultraviolet light communication, and can be applied to the fields of satellite detection and the like.
Drawings
FIG. 1 is a schematic diagram of the front-end amplifier circuit of the UV receiver of the present invention;
FIG. 2 is a circuit diagram of an ultraviolet light receiver front end amplification circuit of the present invention;
fig. 3 is an equivalent circuit diagram of the ultraviolet detector in the MSM structure of fig. 2.
Fig. 4 is a graph of simulated frequency characteristics of the ultraviolet receiver front-end circuit of the present invention;
fig. 5 is a graph of simulated transient characteristics of the ultraviolet receiver front-end circuit of the present invention;
fig. 6 is a graph of simulated input noise characteristics of the ultraviolet light receiver front-end circuit of the present invention.
Detailed Description
The invention is described in detail below with reference to the figures and the embodiments.
Referring to fig. 1 and 2, the monolithically integrated ultraviolet light receiver front end amplification circuit based on a 4H-SiC substrate of the present invention includes: ultraviolet detector U1RGC input circuit, voltage gain circuit and output circuit, and ultraviolet detector U1The RGC input circuit, the voltage gain circuit and the output circuit are all integrated on a 4H-SiC substrate. Wherein:
1. ultraviolet detector U1For converting the received ultraviolet light signal into current signal, its anode is connected with input end of RGC input circuit, and its cathode is connected with DC voltage source V2Positive electrode connection of V2The negative pole of the ultraviolet detector U1 is grounded, and a resistor R is connected in parallel at two ends of the ultraviolet detector U1gResistance RgIs an ultraviolet detector U1The load of (2).
As a preferred scheme, the ultraviolet detector U1Is a 4H-SiC ultraviolet detector. More preferably, the 4H-SiC ultraviolet detector U1The structure is MSM structure, which is composed of two Schottky barrier diodes back to back. In normal operation the two diode depletion regions are connected and have the same electric field direction, and when biased at a sufficiently large voltage, there is always one diode in reverse bias, thus having a small reverse bias current and high responsivity.
Based on the working principle of the ultraviolet detector with the MSM structure, an equivalent circuit model is established based on a carrier continuity equation, as shown in FIG. 3. The circuit model has three terminals, PinThe end points are virtual ports, the input of optical signals is simulated by the electric signals, and the two end points of the NA and the NB are the anode and the cathode of the detector in sequence.
Because the MSM plane structure of the ultraviolet detector is simple, the ultraviolet detector with the MSM structure has good compatibility with a field effect tube.
2. The RGC input circuit is used for connecting the ultraviolet detector U1The transmitted current signal is converted into a voltage signal, and the ultraviolet detector U is shielded1The capacitance, the expanded circuit bandwidth, the input end of the RGC input circuit and the ultraviolet detector U1And the output end is connected with the input end of the voltage gain circuit.
3. The voltage gain circuit is used for further amplifying the signal output by the RGC input circuit and improving the gain of the output signal, the input end of the voltage gain circuit is connected with the output end of the RGC input circuit, and the output end of the voltage gain circuit is connected with the input end of the output circuit.
4. The input end of the output circuit is connected with the output end of the voltage gain circuit. The output circuit is used for driving a subsequent circuit and isolating an internal circuit from the subsequent circuit, so that the driving capability of the front-end amplifying circuit is improved.
As a preferred solution, referring to fig. 1 and 2, the monolithic integrated ultraviolet light receiver front-end amplifier circuit based on 4H-SiC substrate of the present invention further comprises: a negative feedback circuit. Negative feedback circuit resistance RFIs formed of a resistor RFOne end of which is connected to the input terminal of the voltage gain circuit and the other end of which is connected to the output terminal of the output circuit, and when the output signal increases, the resistor R is connected to the output terminal of the output circuitF(negative feedback circuit) feeds back the high level to the input terminal of the voltage gain circuit via the transistor M3Transistor M3Is pulled low, which in turn acts as a transistor M4Thus the transistor M4The output signal of the source follower is lowered, that is, the output potential of the output circuit is lowered, thereby playing a role of stabilizing the output signal, and vice versa.
In the invention, the RGC input circuit is preferably designed by a 4H-SiC MESFET device, and the RGC input circuit is formed by cascade connection of a common-gate amplifier circuit and a common-source amplifier circuit to form feedback. The common-gate amplifier circuit and the common-source amplifier circuit are described below.
Referring to fig. 2, the common gate amplifying circuit is composed of a resistor Rd、RsAnd a transistor M2Composition wherein the resistance RdOne end of which is connected to the voltage VDD and the other end of which is connected to the transistor M2Is connected to the drain terminal of the resistor RsAnd a terminal of the transistor M2The source end of the transformer is connected with the ground, and the other end of the transformer is grounded. Transistor M2The source terminal of (1) is the input terminal of the common grid amplifying circuit, the transistor M2The drain terminal of the transistor M is the output terminal of the common-gate amplifier circuit2The gate terminal of the amplifier passes through a resistor R in the common source stage amplifying circuitLAnd connecting the voltage VDD to form a common gate structure.
Referring to fig. 2, the common source stage amplifying circuit is composed of a resistor RLAnd a transistor M1Composition, transistor M1Source terminal of the resistor R is grounded, drain terminal of the resistor R is grounded, and the resistor R is connected with the drain terminal of the resistor RLIs connected to a resistor RLAnd the other end thereof is connected to the voltage VDD. Transistor M1The gate terminal of the transistor M is the input terminal of the common source amplifier circuit1The drain terminal of the amplifier is the output terminal of the common source amplifier circuit.
The connection relationship between the common-gate amplification circuit and the common-source amplification circuit is as follows: input end of common source stage amplifying circuit, namely transistor M1Gate terminal of the common-gate amplifier circuit, i.e. the transistor M2Is connected with the source end, and the output end of the common source stage amplifying circuit is the transistor M1Drain terminal of and transistor M2The gate terminals of the common gate amplifying circuits are connected to form a negative feedback loop, so that the output signals of the common gate amplifying circuits can be effectively stabilized.
In the common-gate amplifier circuit and the common-source amplifier circuit, the transistor M is the input terminal of the common-gate amplifier circuit2The source end of the circuit is the input end of an RGC input circuit, the input end of the RGC input circuit and the ultraviolet detector U1The anode of (2) is connected; transistor M as output terminal of common-gate amplifier circuit2The output end of the RGC input circuit is connected with the input end of the voltage gain circuit.
Preferably, referring to FIG. 2, the voltage gain circuit is formed by a resistor R1、R2And a transistor M3Is formed of a resistor R1One end of which is connected to the voltage VDD and the other end of which is connected to the transistor M3Is connected to the drain terminal of the resistor R2And a terminal of the transistor M3The source end of the transformer is connected with the ground, and the other end of the transformer is grounded. Transistor M3The gate terminal of the voltage gain circuit is the output of the voltage gain circuitInput terminal, input terminal of voltage gain circuit and output terminal of RGC input circuit, i.e. transistor M2The drain end of the first transistor is connected; transistor M3The drain of the voltage gain circuit is the output end of the voltage gain circuit, and the output end of the voltage gain circuit is connected with the input end of the output circuit.
Preferably, referring to fig. 2, the output circuit is formed by a transistor M4And a resistor R, wherein one end of the resistor R is connected with the transistor M4Is connected to the source, the other end is grounded, and the transistor M4Is connected to a voltage VDD. Transistor M4The gate terminal of the output circuit is the input terminal of the output circuit, the input terminal of the output circuit and the output terminal of the voltage gain circuit, i.e. the transistor M3The drain end of the first transistor is connected; transistor M4The output end of the output circuit is connected with one end of the negative feedback circuit, and the other end of the negative feedback circuit is connected with the input end of the voltage gain circuit.
By simulation in PSpcie, we obtain the amplitude-frequency characteristic, transient characteristic and equivalent input noise curve of the whole circuit, see fig. 4, fig. 5 and fig. 6, respectively.
Therefore, the monolithic integrated ultraviolet receiver front-end amplifying circuit designed by adopting the 4H-SiC MESFET has good characteristics: the bandwidth is wider and the noise is lower.
It should be noted that the above-mentioned embodiments do not limit the present invention in any way, and all technical solutions obtained by using equivalent alternatives or equivalent variations fall within the protection scope of the present invention.
Claims (5)
1. A monolithic integration ultraviolet light receiver front end amplifier circuit based on 4H-SiC substrate, characterized by comprising:
ultraviolet detector U1: the anode is connected with the input end of the RGC input circuit, the cathode is connected with a DC voltage source V2The anode is connected and used for converting the received ultraviolet light signal into a current signal;
RGC input circuit: input end and ultraviolet detector U1Is connected with the anode, the output end of the anode is connected with the input end of the voltage gain circuit, and is used forAn ultraviolet detector U1The transmitted current signal is converted into a voltage signal, and the ultraviolet detector U is shielded1The capacitor of (2) expands the circuit bandwidth;
a voltage gain circuit: the input end is connected with the output end of the RGC input circuit, and the output end is connected with the input end of the output circuit, so as to further amplify the signal output by the RGC input circuit and improve the gain of the output signal;
an output circuit: the input end is connected with the output end of the voltage gain circuit and used for driving a subsequent circuit and isolating the internal circuit from the subsequent circuit;
the ultraviolet detector U1The RGC input circuit, the voltage gain circuit and the output circuit are integrated on the 4H-SiC substrate;
the RGC input circuit is designed by adopting a 4H-SiC MESFET device, and a common gate amplification circuit and a common source amplification circuit are cascaded to form feedback;
the common gate amplifying circuit is composed of a resistor Rd、RsAnd a transistor M2Composition of, the resistance RdOne end of which is connected to the voltage VDD and the other end of which is connected to the transistor M2Is connected to the drain terminal of the resistor RsAnd a terminal of the transistor M2The source end of the transistor M is connected, the other end of the transistor M is grounded, and the transistor M is connected with the ground2The source terminal and the drain terminal of the transistor M are respectively the input terminal and the output terminal of the common grid amplifying circuit2The gate terminal of the amplifier circuit passes through a resistor R in a common source electrode amplifying circuitLConnecting a voltage VDD to form a common gate structure;
the common source amplifying circuit is composed of a resistor RLAnd a transistor M1Composition of, the transistor M1Source terminal of the resistor R is grounded, drain terminal of the resistor R is grounded, and the resistor R is connected with the drain terminal of the resistor RLIs connected to a resistor RLIs connected to a voltage VDD, said transistor M1The gate end and the drain end of the amplifier are respectively the input end and the output end of the common source amplifying circuit;
the input end and the output end of the common source amplifying circuit are respectively connected with the input end of the common gate amplifying circuit and the transistor M2The grid end of the grid is connected;
the input end and the output end of the common grid amplifying circuit are respectively the input end and the output end of the RGC input circuit;
the voltage gain circuit is composed of a resistor R1、R2And a transistor M3Is formed of the resistor R1One end of which is connected to the voltage VDD and the other end of which is connected to the transistor M3Is connected to the drain terminal of the resistor R2And a terminal of the transistor M3The source end of the transistor M is connected, the other end of the transistor M is grounded, and the transistor M is connected with the ground3The gate terminal and the drain terminal of the voltage gain circuit are respectively an input terminal and an output terminal of the voltage gain circuit.
2. The monolithically integrated 4H-SiC substrate based ultraviolet light receiver front end amplification circuit of claim 1, wherein the output circuit is formed by a transistor M4And a resistor R having one end connected with the transistor M4Is connected to the source and the other end is grounded, the transistor M4Is connected to a voltage VDD, a transistor M4The gate terminal and the source terminal of the output circuit are respectively an input terminal and an output terminal of the output circuit.
3. The monolithically integrated 4H-SiC substrate based ultraviolet light receiver front end amplification circuit of claim 1, wherein the ultraviolet detector is a 4H-SiC ultraviolet detector.
4. The monolithically integrated ultraviolet receiver front-end amplification circuit based on a 4H-SiC substrate of claim 3, wherein the 4H-SiC ultraviolet detector is of an MSM structure and is composed of two back-to-back schottky barrier diodes.
5. The monolithically integrated 4H-SiC substrate based ultraviolet light receiver front end amplification circuit of any of claims 1 to 4, further comprising: a negative feedback circuit;
the negative feedback circuit resistance RFIs formed of the resistor RFThe two ends of the voltage gain circuit are respectively connected with the input end of the voltage gain circuit and the output end of the output circuit, and the effect of stabilizing output signals is achieved.
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| CN103441737A (en) * | 2013-08-27 | 2013-12-11 | 西北工业大学 | Transresistance preamplifier circuit |
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| KR100574969B1 (en) * | 2004-02-12 | 2006-05-02 | 삼성전자주식회사 | Regulated cascode amplifier circuit with gain enhancement |
| JP5639554B2 (en) * | 2011-09-15 | 2014-12-10 | 株式会社東芝 | Light receiving circuit |
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| CN101068106A (en) * | 2006-05-04 | 2007-11-07 | 三星电子株式会社 | Regulated cascode circuit, an amplifier including the same, and method of regulating a cascode circuit |
| CN103441737A (en) * | 2013-08-27 | 2013-12-11 | 西北工业大学 | Transresistance preamplifier circuit |
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Effective date of registration: 20210804 Address after: 401332 unit 1, building 1, phase 3, R & D building, Xiyong micro power park, Shapingba District, Chongqing Patentee after: Chongqing Institute of integrated circuit innovation Xi'an University of Electronic Science and technology Address before: 710071 No. two Taibai South Road, Shaanxi, Xi'an Patentee before: XIDIAN University |
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