CN104090165A - Silicon nano sensing array giant piezoresistive coefficient measuring system and four-point bending force-applying device - Google Patents
Silicon nano sensing array giant piezoresistive coefficient measuring system and four-point bending force-applying device Download PDFInfo
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Abstract
The invention relates to a silicon nano sensing array giant piezoresistive coefficient measuring system and a four-point bending force-applying device. The system is composed of three parts: a four-point bending force-applying device, a micro resistance detecting device and a micro strain detecting device. The four-point bending force-applying device applies uniform axial stress (strain) to a silicon nanowire sensing array. The four-point bending force-applying device comprises a ship-shaped base, a base sliding rail slot, equal-altitude L-shaped fixtures placed in a mirroring manner, equal-altitude L-shaped load supporting platforms placed in a mirroring manner, nuts, gaskets, threaded connecting rods, a top connecting rod, a plurality of weights with certain mass, a tray and a loading pressure head. The weights are added to the tray through the connecting rod on the spacing-adjustable loading pressure head to apply pressure to a silicon nanowire, and the output voltage across the two ends of a bridge circuit after pressure is applied is measured by the micro resistance detecting device. The device has the advantages of simple manufacture, small size, low cost and low power consumption. The device has higher precision and high stability due to the adoption of an array-type multi-point average measurement technology.
Description
Technical field
The invention belongs to minute mechanical and electrical system technical field, be specifically related to the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array.
Background technology
At present, development along with technology such as micro-nano processing and analyses, research finds that the size effect of semiconductor material under micro-nano-scale, piezoresistive effect, grain boundary effect etc. have brought special performance for it at aspects such as power, heat, optical, electrical, magnetic, and produce thus micro/nano level electronic devices and components powerful, superior performance, be widely used in the sensor of micro-nano electronic mechanical system, as pressure transducer, acceleration transducer and various biochemical sensor.Therefore micro Nano material has huge application prospect.The resistance-strain coefficient of the silicon voltage dependent resistor (VDR) of tradition doping process is less, and along with diminishing of size sensor, the voltage dependent resistor (VDR) of traditional doping process can not meet the requirement of modern high sensitivity testing.Silicon nanowires is as a kind of novel monodimension nanometer material, do not have always good method to characterize its piezoresistive effect and Li Min characteristic important parameter---piezoresistance coefficient is measured, greatly limited the applicating and exploitation of silicon nanowires sensing arrangement.And silicon nanowires sensing arrangement can have huge piezoresistance coefficient, therefore study huge piezoresistance coefficient to the practical exploitation of silicon nanowires highly significant.While utilizing at present atomic force microscope (AFM), scanning electron microscope and transmission electron microscope (TEM) to measure piezoresistance coefficient, find that the two ends of close silicon nanowires are in extended state, center section is in compressive state, two regions are because the resistance variations that piezoresistive effect produces is cancelled out each other, measurement accuracy is greatly declined, secondly, the method equipment is complicated, expensive, volume is large, environment, temperature, humidity are all had to strict requirement, not convenient in the use, Measuring Time is long.
Utilize the piezoresistive effect of MOS raceway groove and technotron (JFET) raceway groove also can realize pressure drag detection.But the subject matter that MOS raceway groove pressure drag detects has 3 points.(1) metal-oxide-semiconductor is a kind of transistor with amplification, and the subtle change of grid voltage can cause the marked change of channel impedance, so poor anti jamming capability.(2) for realizing pressure drag, detect and metal-oxide-semiconductor need to be connected into electric bridge, and there is negative feedback in MOS electric bridge, can cause the remarkable decline of pressure drag sensitivity.Theoretical calculating shows that the sensitivity of enhancement mode metal-oxide-semiconductor electric bridge is less than half of force sensing resistance electric bridge.(3) when member is crooked, maximum stress appears at surface, along with the increase stress of the degree of depth declines rapidly.And metal-oxide-semiconductor design feature has determined that raceway groove cannot be produced on surface, cause sensitivity to decline.Also there is the similar problem of MOS raceway groove pressure drag structure in JFET raceway groove pressure drag structure, to the responsive poor anti jamming capability of grid voltage, there is negative feedback meeting desensitization etc.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, the present invention proposes the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array, to reach the pick-up unit of simplifying huge piezoresistance coefficient and the object that improves detection sensitivity and precision, the present invention utilizes multiplexer switch to realize the technology of array multi-point average monitor strain and resistance, thereby it has more high precision and better stability, easy to use, shortened Measuring Time.
In order to reach above target, the invention provides the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array, comprise four-point bending force application apparatus, small resistance pick-up unit and small strain pick-up unit, wherein, described four-point bending force application apparatus comprises ship type base 1, base sliding-rail groove, nut 3, two contour L-type fixtures 4, top links 5, two contour L-type load support platforms 12, counterweight 6, pallets 7 and loads pressure head 8, described base 1 front surface is marked with scale mark 2, and described base sliding-rail groove is arranged on the upper surface of described base 1; Described contour L-type fixture 4 and contour L-type load support platform 12 are symmetrical arranged with respect to the center line of described four-point bending force application apparatus respectively, and described contour L-type fixture 4 and contour L-type load support platform 12 can be slidably arranged in described base sliding-rail groove; Described loading pressure head 8 is arranged on the top of described contour L-type load support platform 12; Described nut 3 comprises upper nut, and described upper nut is arranged on described pallet 7 and loads between pressure head 8, and described top links 5 is from top to bottom successively through described counterweight 6, pallet 7 middle parts, upper nut and loading pressure head 8 middle parts; The both side ends of described pallet 7 and loading pressure head 8 is resisted against respectively on described contour L-type fixture 4;
Described small resistance pick-up unit comprises Wheatstone bridge and Acquisition System for Weak Signal based, and the arbitrary silicon nanowires of described Wheatstone bridge in described silicon nanowires sensor array 13 forms with three precision resistances identical with described silicon nanowires resistance; Described Acquisition System for Weak Signal based comprises pre-amplification circuit, second level filtering and amplifying circuit, voltage follower, analog to digital converter and terminal module, and described pre-amplification circuit, second level filtering and amplifying circuit, voltage follower, analog to digital converter are connected in turn with LCD MODULE; Described Acquisition System for Weak Signal based is connected with the voltage output end of described Wheatstone bridge;
Described small strain pick-up unit comprises full-bridge type foil gauge 11, described full-bridge type foil gauge 11 sticks on respectively the stress point position of the pros and cons of described silicon nanowires sensor array chip 13, described four full-bridge type foil gauges (11) form four strain full-bridge circuits and realize the measurement of strain multi-point average, the present invention adopts four full-bridge type foil gauges (11) to form four strain full-bridge circuits, each two of silicon nanowires sensor array chip pros and cons, measure the strain multi-point average of silicon nanowires sensor array chip thereby realize; Described Acquisition System for Weak Signal based is connected with the output terminal of described strain full-bridge circuit.
The present invention also provides a kind of four-point bending force application apparatus, comprise ship type base 1, base sliding-rail groove, nut 3, two contour L-type fixtures 4, top links 5, two contour L-type load support platforms 12, counterweight 6, pallets 7 and load pressure head 8, described base 1 front surface is marked with scale mark 2, and described base sliding-rail groove is arranged on the upper surface of described base 1; Described contour L-type fixture 4 and contour L-type load support platform 12 are symmetrical arranged with respect to the center line of described four-point bending force application apparatus respectively, and described contour L-type fixture 4 and contour L-type load support platform 12 can be slidably arranged in described base sliding-rail groove; Described loading pressure head 8 is arranged on the top of described contour L-type load support platform 12; Described nut 3 comprises upper nut, and described upper nut is arranged on described pallet 7 and loads between pressure head 8, and described top links 5 is from top to bottom successively through described counterweight 6, pallet 7 middle parts, upper nut and loading pressure head 8 middle parts; The both side ends of described pallet 7 and loading pressure head 8 is resisted against respectively on described contour L-type fixture 4.
The invention has the beneficial effects as follows:
1. the present invention is large to carrying out the length testing scope of silicon nanowires sensor array chip of four-point bending, and the length of silicon nanowires sensor array chip can be continually varying size value, and equal installation testings on same experimental provision.
2. the present invention, to all adopting fixed support platform in silicon nanowires sensor array chip testing process, can not produce too much influence factor because of stiff end constraint, guarantees the accuracy of test result.
3. the present invention, when test silicon nano wire sensor array chip, can adjust the distance of two strong points and two load(ing) points, eliminates test sample and when bend by pressure, produces too much elongation, improves the accuracy of data.
4. the present invention adopts small resistance pick-up unit and the small strain pick-up unit based on multi-point average measuring technique, single unit system manufacture is simple, volume is little, cost is low, precision is high, less demanding to environment, Measuring Time greatly reduces, and has very strong market popularization value.
Accompanying drawing explanation
In order to further illustrate content of the present invention and feature, further describe in conjunction with the following drawings, wherein:
Fig. 1. four-point bending device schematic diagram of the present invention.
Fig. 2. the front surface figure of tested silicon nanowires sensor array.
Fig. 3. the back view of tested silicon nanowires sensor array.
Fig. 4. small strain of the present invention detects and small resistance pick-up unit entire block diagram.
Fig. 5. the full-bridge circuit that three precision resistances that silicon nanowires of the present invention is identical with its resistance form.
Fig. 6. the multiplexer switch control circuit of small strain detection of the present invention and small resistance pick-up unit.
Fig. 7. pre-amplification circuit of the present invention.
Fig. 8. the second level of the present invention filtering and amplifying circuit and follower circuit.
Fig. 9. A/D change-over circuit of the present invention.
Embodiment
For making object and the technical scheme of the present invention/inventive embodiments clearer, below in conjunction with the accompanying drawing of the present invention/inventive embodiments, the technical scheme of the present invention/inventive embodiments is clearly and completely described.Obviously, described embodiment is a part of embodiment of the present invention/invention, rather than whole embodiment.Based on described the present invention/inventive embodiment, the every other embodiment that those of ordinary skills obtain under the prerequisite without creative work, belongs to the scope that the present invention/invention is protected.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, and all terms used herein (comprising technical term and scientific terminology) have the meaning identical with the general understanding of those of ordinary skill in the present invention/field that the present invention belongs to.Should also be understood that such as those terms that define in general dictionary and should be understood to have the consistent meaning of meaning in the context with prior art, unless and definition as here, can not explain by idealized or too formal implication.
The implication of the "and/or" described in the present invention/invention refers to separately individualism or both simultaneous situations include interior.
The implication of " inside and outside " described in the present invention/invention refers to respect to equipment itself, in the direction of sensing equipment inside is, otherwise outside being, but not specific restriction to equipment mechanism of the present invention.
When the implication of " left and right " described in the present invention/invention refers to reader over against accompanying drawing, reader's the left side is a left side, and the right of reader is the right side, but not specific restriction to equipment mechanism of the present invention.
The implication of " connection " described in the present invention/invention can be that the direct connection between parts can be also by the indirect connection of other parts between parts.
The implication of " clockwise " described in the present invention/invention and " counterclockwise " refers to clockwise and counterclockwise direction shown in accompanying drawing, definition while being the reading comprehension for easy-to-read person, but not specific restriction to the equipment mechanism of the present invention/invention.
Fig. 1 is four-point bending device schematic diagram of the present invention; Fig. 2 is the front surface figure of tested silicon nanowires sensor array; Fig. 3. be the back view of tested silicon nanowires sensor array; Fig. 4 is that small strain of the present invention detects and small resistance pick-up unit entire block diagram; Fig. 5 is the full-bridge circuit of three precision resistances compositions that silicon nanowires of the present invention is identical with its resistance; Fig. 6 is the multiplexer switch control circuit of small strain detection of the present invention and small resistance pick-up unit; Fig. 7 is pre-amplification circuit of the present invention; Fig. 8 is the second level of the present invention filtering and amplifying circuit and follower circuit; Fig. 9 is A/D change-over circuit of the present invention.The huge piezoresistance coefficient measuring system of silicon nanosensor array provided by the invention comprises four-point bending force application apparatus, small resistance pick-up unit and small strain pick-up unit three parts.Wherein four-point bending force application apparatus applies even axial stress (strain) to silicon nanowires sensor array chip, as shown in Figure 1, the contour L-type fixture 4 that this device comprises ship type base 1, base sliding-rail groove, mirror image placement is, the counterweight 6 of the contour L-type load support platform 12 of mirror image placement, nut 3, pad 9, threaded rod 10, top links 5, some quality, pallet 7 and loading pressure head 8.The installation step of this four-point bending device is described in detail in detail below:
(a) the contour L-type fixture 4 that mirror image is placed slides in the sliding-rail groove on base respectively, insert threaded rod 10, cover Upper gasket 9, the nut 3 of screwing on again, wouldn't tighten, according to the size dimension that loads pressure head 8, utilize the scale mark 2 of base 1 front surface, adjust symmetrically the contour L-type fixture 4 of mirror image placement to assigned address, fastening nut 3, makes L-type fixture 4 be connected with base 1 is fastening;
(b) the contour L-type load support platform 12 that mirror image is placed, insert threaded rod 10, cover Upper gasket 9, the nut 3 of screwing on again, wouldn't tighten, according to the situation different in size of silicon nanowires sensor array chip 13, utilize the scale mark 2 of base 1 front surface, adjust symmetrically the contour L-type load support platform 12 of mirror image placement to assigned address, fastening nut 3, makes it to be connected with base 1 is fastening;
(c) by adding counterweight 6 on the pallet 7 toward loading pressure head 8, cause chip to be subject to the axial homogeneous state of stress, can carry out four-point bending test.
The huge piezoresistance coefficient testing process that the four-point bending test of four-point bending charger provided by the invention and silicon nanowires is described in detail in detail below, is specifically completed by following steps:
The method of the survey strain that the present invention adopts is based on strain ga(u)ge, strain is converted into electric signal and measures.At the stress point of silicon nanowires sensor array chip 13, be close to foil gauge 11, the deformation of its effect for occurring to a certain degree when silicon nanowires sensor array chip 13, foil gauge 11 also can produce corresponding reciprocity strain, the voltage signal that is directly proportional to strain of output, utilizes PC host computer to carry out can obtaining after data processing the strain value of silicon nanowires sensor array.Its course of work is: change → small-signal of change → full-bridge of silicon nanowires sensor array pressurized generation axial strain → foil gauge resistance output voltage amplification → data processing → record strain data of being correlated with.In order to improve the strain measurement precision of silicon nanowires, the present invention adopts foil gauge Hui Sitong full-bridge connection, its have highly sensitive, measurement range is wide, circuit is simple, precision is high and be easy to realize the features such as temperature compensation, has met well the requirement of strain measurement.The 5V supply voltage of strain full-bridge adopts ADP3303;
Pasting foil gauge is a most important link, in measuring process, in order to allow the distortion of silicon nanowires sensor array pass to foil gauge by tack coat faithfully, guarantee that tack coat evenly, firmly, does not produce creep.Its taping process is: check the insulation resistance value of surface → stickups foil gauge → curing → survey foil gauge of foil gauge resistance → cleanings silicon nanowires sensor array chip → draw wire;
By Du Pont's line, utilize multiplexer switch to be connected to Acquisition System for Weak Signal based the terminals of a plurality of strainometer conducting resinls and foil gauge and form small strain pick-up unit.Particularly, because the differential mode strain signal of electric bridge output is very little, feature based on signal, the instrument integrated transporting discharging AD620 that the present invention adopts AD company to produce, AD620 has low-power consumption, gain adjustable, the instrumentation amplifier of high input impedance and common-mode rejection ratio, particularly suitable is done the preamplifier state of small-signal, OP07 has low input offset voltage, Low Drift Temperature, low input noise, voltage amplitude and high precision operating amplifier steady in a long-term, form active low pass amplifying circuit with resistance capacitance, mode by cascade is carried out amplification filtering to the faint small-signal of electric bridge, A/D converter is the core component of data acquisition circuit, and the simulating signal that it is responsible for input is converted to digital signal, so that central processing unit is processed.Correctly selecting A/D converter is the key that improves data acquisition circuit precision.The high-resolution analog to digital converter that the AD7794 ShiADI company that the present invention adopts releases, AD7794 is applicable to 6 tunnel difference inputs of 24 of low-power consumption, low noise, complete simulation leading portion, built-in low noises in high-acruracy survey application
; Low noise instrument amplifier in also integrated sheet, thereby can directly input small-signal to ADC.A built-in accurate low noise in sheet, Low Drift Temperature bandgap voltage reference, also can adopt maximum two outside difference reference sources, sheet internal characteristic comprises programmable excitation current source, fusing current is controlled and bias voltage generator, by low side power switch, can be used to turn-off bridge type magnetic sensor between twice conversion, thereby it is minimum that systemic-function is dropped to, output speed can change in the scope of 4.17HZ to 470HZ, supply voltage adopts 2.5V to 5.25V to power, its clock signal port, data write inbound port and data output end respectively with the PA3 of low-power consumption characteristic single-chip microcomputer STM32F103RBT6, PA5, PA6 is connected.The AIN1+ of AD7794 and AIN1-are for gathering the analog voltage of electric bridge output, and reference source is REF1+ and REF1-, by saving the data in EEPROM after A/D analog to digital conversion; The processing aspect EEPROM module of data, because storage data is more, selects storage area larger, lower-cost AT24C256 reservoir.This EEPROM has 32KB capacity, passes through I
2c bus is connected with STM32, realizes the storage of data and reads.RS232 realizes the communication work with host computer, successfully a large amount of test datas is transferred to PC and does data processing and analysis.Can certainly intuitively numerical value be presented on LCD1602 liquid crystal.
As electric bridge △ Usc=0 during in equilibrium state, when being subject to ballast, silicon nanowires sensor array drives the strain variation of foil gauge, thus the variation that produces △ Usc.According to formula ε=△ Usc/ (Ui*K), can calculate the strain value after silicon nanowires sensor array pressurized.
Wherein: ε---the strain value after the pressurized of silicon nanowires;
△ Usc---the output voltage of full-bridge after foil gauge pressurized;
Ui---strain full-bridge supply voltage;
The sensitivity coefficient of K---foil gauge.
In order to guarantee the more accuracy of data, by the external multiplexer switch CD4052 of the full-bridge circuit of a plurality of foil gauges, CD4052 is a difference 4 passage numeral control simulation switches, has A, two scale-of-two control input ends of B and INH input, has low conduction impedance and very low cut-off leakage current.Amplitude is that the digital signal of 4.5～20V can be controlled peak-to-peak value to the simulating signal of 20V.For example, if VDD=+5V, VSS=0, VEE=-13.5V, the simulating signal of can control-13.5～4.5V of the digital signal of 0～5V, these on-off circuits have extremely low quiescent dissipation in whole VDD-VSS and VDD-VEE power range, irrelevant with the logic state of control signal, when INH input end=" 1 ", all passage cut-offs.A passage in 4 pairs of passages of two binary input signal gatings, can connect this and input to output.What the present invention adopted is the Y passage on the second tunnel, control bit A, B is received to the PA1 of STM32, and PA2 makes it put 1 and 0.The value of each passage of multiplexer switch CD4052 is averaged, records mean strain value and carry out follow-up data processing;
Because △ R/R is very little, it is not too accurate that multimeter is measured, and need to adopt some metering circuit, and the measurement that resistance is changed to △ R/R is relatively converted to the measurement of voltage, by △ Uout=(△ R/R) * U0 formula, can calculate easily the resistance subtle change of silicon nanowires 13.
Wherein: △ Uout---bridge output voltage;
U0---supply voltage (for bridge voltage);
Resistance value ratio after the pressurized of △ R/R---silicon nanowires before change in resistance and pressurized.
Typical metering circuit adopts Wheatstone bridge, due to the silicon nanowires strain that is squeezed, produces the variation of resistance, thereby causes the imbalance of electric bridge, has produced differential wave.The impedance of direct current amplifier input stage is very high, and with bridge wall impedance phase ratio, it is infinitely great that its loaded impedance can be considered.Therefore the present invention has adopted direct current bridge, and the Hui Sitong full-bridge circuit that three precision resistances identical with its resistance of arbitrary silicon nanowires in silicon nanowires sensor array 13 are formed, measures its change in resistance while there is strain;
The present invention utilizes multiplexer switch CD4052 that a plurality of Wheatstone bridges and Acquisition System for Weak Signal based are formed to small resistance pick-up unit, and a plurality of measured values are averaged to processing.Its pre-amplification circuit is also to adopt the amplifying circuit of being built by AD620, secondary output stage amplifier circuit is also built by OP07, in order to suppress to disturb, the first order is as the low-pass filter of single order, in order to improve driving force, assurance signal can not put the too many of decay front, and afterbody is as voltage follower; The A/D conversion electrical equipment of small resistance pick-up unit also adopts low-power consumption, low noise, the high-resolution AD7794 analog to digital converter in high-acruracy survey application.The average voltage level of final output is presented on liquid crystal LCD1602.Adopted array multi-point average measuring technique to improve the measuring accuracy of change in resistance.
According to the scale mark 2 of the front surface of base 1, adjust symmetrically distance between the contour L-type load support platform 12 top cusps that mirror image (two opposition) places, tightening nut 3, be fixed on base 1, then silicon nanowires sensor array chip 13 is placed in support platform 12, guarantee that silicon nanowires 13 is smooth vertical and horizontal, guarantee to load pressure head 8 loads in assigned address, guarantee the Stability and veracity loading;
The slide rail that loads contour L-type fixture 3 both sides that pressure head first places by mirror image (two opposition) is placed in two pressure points that load pressure head on the surface of silicon nanowires sensor array chip 13, by loading connecting rod 5 on pressure head 8, to the counterweight 6 that adds some quality on pallet 7, to silicon nanowires sensor array chip 13 surfaces, exerts pressure;
Add lentamente counterweight, when operation loads pressure head 8, record strain and the change in resistance of silicon nanowires sensor array 13 after average, and utilize general piezoresistance coefficient formula to realize the measuring and calculating to the huge piezoresistance coefficient of silicon nanowires sensor array according to strain and change in resistance.
Above are only specific embodiments of the invention, the application when not limiting the invention in other materials piezoresistance coefficient and measuring, all modifications of making within the spirit and principles in the present invention, is equal to and replaces and improvement etc., within all should being included in protection scope of the present invention.
These are only the present invention/working of an invention mode, it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the present invention/patent of invention scope.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to the protection domain of the present invention/invention.
Claims (10)
1. the huge piezoresistance coefficient measuring system of silicon nanosensor array, is characterized in that, comprises four-point bending force application apparatus, small resistance pick-up unit and small strain pick-up unit, wherein,
Described four-point bending force application apparatus comprises ship type base (1), base sliding-rail groove, nut (3), two contour L-type fixtures (4), top links (5), two contour L-type load support platforms (12), counterweight (6), pallet (7) and loads pressure head (8), described base (1) front surface is marked with scale mark (2), and described base sliding-rail groove is arranged on the upper surface of described base (1); Described contour L-type fixture (4) and contour L-type load support platform (12) are symmetrical arranged with respect to the center line of described four-point bending force application apparatus respectively, and described contour L-type fixture (4) and contour L-type load support platform (12) can be slidably arranged in described base sliding-rail groove; Described loading pressure head (8) is arranged on the top of described contour L-type load support platform (12); Described nut (3) comprises upper nut, described upper nut is arranged on described pallet (7) and loads between pressure head (8), and described top links (5) is from top to bottom successively through described counterweight (6), pallet (7) middle part, upper nut and loading pressure head (8) middle part; The both side ends of described pallet (7) and loading pressure head (8) is resisted against respectively on described contour L-type fixture (4);
Described small resistance pick-up unit comprises Wheatstone bridge and Acquisition System for Weak Signal based, and the arbitrary silicon nanowires of described Wheatstone bridge in described silicon nanowires sensor array (13) forms with three precision resistances identical with described silicon nanowires resistance; Described Acquisition System for Weak Signal based comprises pre-amplification circuit, second level filtering and amplifying circuit, voltage follower, analog to digital converter and terminal module, and described pre-amplification circuit, second level filtering and amplifying circuit, voltage follower, analog to digital converter are connected in turn with LCD MODULE; Described Acquisition System for Weak Signal based is connected with the voltage output end of described Wheatstone bridge;
Described small strain pick-up unit comprises full-bridge type foil gauge (11), two described full-bridge type foil gauges (11) are respectively pasted in the stress point position of the pros and cons of described silicon nanowires sensor array chip (13), and described four full-bridge type foil gauges (11) form four strain full-bridge circuits; Described Acquisition System for Weak Signal based is connected with the output terminal of described strain full-bridge circuit.
2. the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array according to claim 1, it is characterized in that, described nut (3) also comprises middle part nut and sidepiece nut, is respectively used to described contour L-type load support platform (12) and contour L-type fixture (4) to be fixed in sliding-rail groove; Described middle part nut and sidepiece nut end are respectively arranged with threaded rod (10), and and described contour L-type load support platform (12) and contour L-type fixture (4) between be provided with pad (9).
3. the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array according to claim 2, it is characterized in that, also comprise silicon nanowires sensor array chip (13), the top of described contour L-type load support platform (12) arranges respectively a triangular pointed, and described silicon nanowires sensor array chip (13) is placed in described triangular pointed; The bottom of described loading pressure head (8) is with two dismountable equilateral triangle tips, described equilateral triangle tip can be arranged on the top of described contour L-type load support platform (12) movably, and is symmetric with the middle null position of scale mark (2); Described equilateral triangle tip is arranged between described loading pressure head (8) and silicon nanowires sensor array chip (13).
4. according to the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array described in claim 2 or 3, it is characterized in that, the shaft portion of described top links (5) is shape of threads.
5. the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array according to claim 1, is characterized in that, the bridge voltage that supplies of described Wheatstone bridge is provided by precision voltage source.
6. the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array according to claim 5, is characterized in that, described terminal module is liquid crystal display or host computer.
7. according to the huge piezoresistance coefficient measuring system of a kind of silicon nanosensor array described in claim 5 or 6, it is characterized in that, comprise a plurality of Wheatstone bridges, described a plurality of Wheatstone bridges are comprised of the identical silicon nanowires of a plurality of resistances and precision resistance; Between described a plurality of Wheatstone bridge and Acquisition System for Weak Signal based, be provided with multichannel reset switch control circuit.
8. a four-point bending force application apparatus, it is characterized in that, comprise ship type base (1), base sliding-rail groove, nut (3), two contour L-type fixtures (4), top links (5), two contour L-type load support platforms (12), counterweight (6), pallet (7) and load pressure head (8), described base (1) front surface is marked with scale mark (2), and described base sliding-rail groove is arranged on the upper surface of described base (1); Described contour L-type fixture (4) and contour L-type load support platform (12) are symmetrical arranged with respect to the center line of described four-point bending force application apparatus respectively, and described contour L-type fixture (4) and contour L-type load support platform (12) can be slidably arranged in described base sliding-rail groove; Described loading pressure head (8) is arranged on the top of described contour L-type load support platform (12); Described nut (3) comprises upper nut, described upper nut is arranged on described pallet (7) and loads between pressure head (8), and described top links (5) is from top to bottom successively through described counterweight (6), pallet (7) middle part, upper nut and loading pressure head (8) middle part; The both side ends of described pallet (7) and loading pressure head (8) is resisted against respectively on described contour L-type fixture (4).
9. a kind of four-point bending force application apparatus according to claim 8, it is characterized in that, described nut (3) also comprises middle part nut and sidepiece nut, is respectively used to described contour L-type load support platform (12) and contour L-type fixture (4) to be fixed in sliding-rail groove; Described middle part nut and sidepiece nut end are respectively arranged with threaded rod (10), and and described contour L-type load support platform (12) and contour L-type fixture (4) between be provided with pad (9).
10. a kind of four-point bending force application apparatus according to claim 9, it is characterized in that, also comprise silicon nanowires sensor array chip (13), the top of described contour L-type load support platform (12) arranges respectively a triangular pointed, and described silicon nanowires sensor array chip (13) is placed in described triangular pointed; The bottom of described loading pressure head (8) is with two dismountable equilateral triangle tips, described equilateral triangle tip can be arranged on the top of described contour L-type load support platform (12) movably, and is symmetric with the middle null position of scale mark (2); Described equilateral triangle tip is arranged between described loading pressure head (8) and silicon nanowires sensor array chip (13).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410214287.8A CN104090165B (en) | 2014-05-21 | 2014-05-21 | The huge piezoresistance coefficient of silicon nanosensor array measures system and four-point bending force application apparatus |
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| CN201410214287.8A CN104090165B (en) | 2014-05-21 | 2014-05-21 | The huge piezoresistance coefficient of silicon nanosensor array measures system and four-point bending force application apparatus |
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| CN104090165A true CN104090165A (en) | 2014-10-08 |
| CN104090165B CN104090165B (en) | 2016-08-17 |
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| CN105258839A (en) * | 2015-10-30 | 2016-01-20 | 南京信息工程大学 | Array type air pressure measurement compensation device and method based on quantum particle swarm wavelet neural network |
| WO2017080340A1 (en) * | 2015-11-09 | 2017-05-18 | 南京信息工程大学 | Nanowire giant piezo-resistive property measurement device and manufacturing method therefor |
| CN108519286A (en) * | 2018-04-27 | 2018-09-11 | 中国信息通信研究院 | A kind of load test equipment and test method for chute |
| CN110991576A (en) * | 2019-11-19 | 2020-04-10 | 江苏佳利达国际物流股份有限公司 | Standardized tray circulation management platform based on NB-LOT technology |
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| US7456638B2 (en) * | 2005-04-19 | 2008-11-25 | University Of South Florida | MEMS based conductivity-temperature-depth sensor for harsh oceanic environment |
| CN103712738A (en) * | 2013-12-18 | 2014-04-09 | 大连理工大学 | Quartz wafer or wafer group sensitivity calibration device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105258839A (en) * | 2015-10-30 | 2016-01-20 | 南京信息工程大学 | Array type air pressure measurement compensation device and method based on quantum particle swarm wavelet neural network |
| WO2017080340A1 (en) * | 2015-11-09 | 2017-05-18 | 南京信息工程大学 | Nanowire giant piezo-resistive property measurement device and manufacturing method therefor |
| CN108519286A (en) * | 2018-04-27 | 2018-09-11 | 中国信息通信研究院 | A kind of load test equipment and test method for chute |
| CN110991576A (en) * | 2019-11-19 | 2020-04-10 | 江苏佳利达国际物流股份有限公司 | Standardized tray circulation management platform based on NB-LOT technology |
| CN110991576B (en) * | 2019-11-19 | 2020-10-02 | 江苏佳利达国际物流股份有限公司 | Standardized tray circulation management platform based on NB-LOT technology |
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| CN104090165B (en) | 2016-08-17 |
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