CN104078832A - Middle-infrared wave band self-cascade optical parametric oscillation laser device - Google Patents
Middle-infrared wave band self-cascade optical parametric oscillation laser device Download PDFInfo
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- CN104078832A CN104078832A CN201410312024.0A CN201410312024A CN104078832A CN 104078832 A CN104078832 A CN 104078832A CN 201410312024 A CN201410312024 A CN 201410312024A CN 104078832 A CN104078832 A CN 104078832A
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Abstract
The invention discloses a middle-infrared wave band self-cascade optical parametric oscillation laser device. A total-reflection endoscope, a laser crystal of a semiconductor laser end face/side pump, an acousto-optic Q-switch, a composite endoscope, a nonlinear optical crystal and an output endoscope are sequentially arranged in an optical path, wherein the total-reflection endoscope and the output endoscope form a base frequency cavity, the composite endoscope and the output endoscope form an optical parametric oscillation cavity, a dielectric film plated on the composite endoscope performs high-resolution transmission on the base frequency laser and meanwhile performs high-resolution transmission on optical wave length of primary and secondary optical parametric oscillation signals, a dielectric film plated on the output endoscope performs high-resolution transmission on the base frequency laser and primary signals, and meanwhile secondary optical parametric oscillation signal light partially penetrates the dielectric film. The middle-infrared wave band self-cascade optical parametric oscillation laser device has the advantages of being compact in structure, high in laser production efficiency and the like.
Description
Technical field
The invention belongs to optoelectronic areas, specifically refer to a kind of laser aid that can be used for realizing 2.6 microns of middle-infrared band Laser outputs, refer to especially middle-infrared band Self-cascading optical parametric oscillator laser.
Background technology
In infrared 2.5-3 micron laser have important application prospect at aspects such as laser medicine, laser biology engineering, gas remote sensing and industrial pollution source monitorings.The light laser of this wave band can also, as the pumping source of mid and far infrared band of light parametric oscillator, obtain special wavelength mid-infrared laser required in the more Laser output of long-wave band, particularly electrooptical countermeasures system simultaneously, particularly important to defence and military system.
In recent years, the expert of different field competitively carries out distinct methods and obtains the LASER Light Source research in this wave band in the world, such as adopting that quantum-well semiconductor laser obtains, erbium ion-doped laser material is directly exported and adopting the optical parametric oscillation etc. of 1.5 micron waveband er-doped laser pumpings.The middle-infrared band laser power that adopts aforesaid way to obtain is at present generally lower.Immature due to middle-infrared band Q-switching device, the pulse laser output that realizes peak value is more difficult.
Mid infrared laser is to utilize second nonlinear optic mixing to realize the technology of optical frequency conversion, is a kind of important means that obtains laser with new wavelength.Contrast other second nonlinear optic frequency conversion (frequencys multiplication, with frequently etc.) device, optical parametric oscillator has tunable advantage, and its tuning range can be from ultraviolet to far infrared, having made up common lasers and frequency multiplication thereof and can only export the defect of some specific wavelength laser, is the important channel that obtains tunable, the high coherent radiation light source of broadband and new wave band of laser system.
Summary of the invention
The object of the invention is the shortcoming and defect existing in order to overcome prior art, and a kind of compact conformation, middle-infrared band Self-cascading optical parametric oscillator laser that laser generation efficiency is high are provided.
For achieving the above object, technical scheme of the present invention is in light path, to place successively the chamber mirror that is all-trans, the laser crystal of semiconductor laser end faces/side faces pumping, acoustooptic Q-switching, Compound Cavity mirror, nonlinear optical crystal and output cavity mirror, chamber mirror and the output cavity mirror composition fundamental frequency chamber of being wherein all-trans, form optical parametric oscillation chamber by Compound Cavity mirror and output cavity mirror, the deielectric-coating plating on described Compound Cavity mirror is to the high transmission of basic frequency laser and simultaneously to the reflection of growing tall of the signal light-wave of first and secondary light parametric oscillation, the deielectric-coating plating on described output cavity mirror sees through the flashlight part of basic frequency laser and the high reflection of first flashlight and while secondary light parametric oscillation.
Further arrange is that described nonlinear optical crystal is to be the arsenic acid titanyl potassium by noncritical phase matching cutting.
Further arrange is that the laser crystal of described semiconductor laser end faces/side faces pumping is neodymium ion doped laser crystal.
Self-cascading optical parametric oscillation process of the present invention is as follows: the fundamental frequency light that the laser crystal of semiconductor laser end faces/side faces pumping produces produces flashlight by first optical parametric oscillation, this flashlight is enclosed in optical parametric oscillation chamber, as the pump light of secondary light parametric oscillation, realize based on monolithic nonlinear optical crystal secondary light parametric oscillation, obtain middle-infrared band Laser output.
Middle-infrared band Self-cascading optical parametric oscillator laser implementation of the present invention is: the laser crystal that adopts the pumping of semiconductor laser end faces/side faces, the fundamental frequency light producing forms fundamental frequency chamber interior resonance at be all-trans chamber mirror and output cavity mirror, and modulates to improve fundamental frequency light peak power in fundamental frequency chamber by acoustooptic Q-switching.This fundamental frequency light is as the pump light of optical parametric oscillation process, and pumping nonlinear optical crystal produces flashlight.Flashlight is enclosed in vibration in Compound Cavity mirror and output cavity mirror composition optical parametric oscillation chamber to be strengthened, and as the pump light of secondary light parametric oscillation, pumping same nonlinear optical crystal produces the flashlight of middle-infrared band, is exported by output cavity mirror.
The arsenic acid titanyl potassium of the public same noncritical phase matching cutting of twice optical parametric oscillation process of Self-cascading optical parametric oscillation laser experience of the present invention, make laser structure compactness, and effectively utilize the advantage of noncritical phase matching, for the optical parametric oscillation of the flight optical crystal that adopts noncritical phase matching to cut, have and there is no deviation angle, the feature that effective nonlinear coefficient is high, so frequency conversion conversion efficiency is high.Calculating by us to phase matched parameter, has proposed the imagination of middle-infrared band Self-cascading optical parameter oscillating laser of the present invention, and has successfully realized by experiment efficient 2.6 micron waveband mid-infrared laser outputs.This invention, as long as by fundamental frequency light is adjusted to Q, is easy to realize the pulse laser output of high repetition, peak value, has unique advantage in acquisition aspect pulsed infrared laser.
Below in conjunction with specification drawings and specific embodiments, the present invention is described further.
Brief description of the drawings
Fig. 1 middle-infrared band Self-cascading optical parametric oscillator laser;
The plated film transmittance curve of Compound Cavity mirror used in Fig. 2 embodiment of the present invention;
The plated film transmittance curve of output cavity mirror used in Fig. 3 embodiment of the present invention;
In Fig. 1: 1 is the chamber mirror that is all-trans, and 2 is neodymium ion doped laser crystal, and 3 is acoustooptic Q-switching, and 4 is Compound Cavity mirror, and 5 is nonlinear optical crystal, and 6 is output cavity mirror.
Embodiment
Below by embodiment, the present invention is specifically described; only be used to further illustrate the present invention; can not be interpreted as limiting the scope of the present invention, the technician in this field can make some nonessential improvement and adjustment to the present invention according to the content of foregoing invention.
Embodiment: make a middle-infrared band Self-cascading optical parametric oscillator laser according to the light path of Fig. 1, for exporting middle-infrared band laser.
Neodymium ion doped laser crystal 2 adopts Nd:YVO
4; Nonlinear optical crystal 5 adopts press 90 ° of θ, the arsenic acid titanyl potassium crystal that the noncritical phase matching of Φ=0 ° is cut; The deielectric-coating that Compound Cavity mirror 4 plates is to 1.06 microns of high transmissions of basic frequency laser, the high reflection of the signal light wavelength (2.6 micron waveband) of the signal light wavelength to first optical parametric oscillation (1.5 micron waveband) and secondary parametric oscillation simultaneously, plated film transmittance curve is as Fig. 2.The deielectric-coating that output cavity mirror 6 plates is to the high reflection of the signal light wavelength (1.5 micron waveband) of (1.06 micron waveband) basic frequency laser and first optical parametric oscillation, signal light wavelength (2.6 micron waveband) transmitance of secondary parametric oscillation is 10% left and right simultaneously, and plated film transmittance curve is as Fig. 3.
The semiconductor laser end pumped laser crystal 2 that adopts 808nm wavelength, 1.06 microns of fundamental frequency light of generation form fundamental frequency chamber interior resonance at be all-trans chamber mirror 1 and output cavity mirror 6, and modulate to improve fundamental frequency light peak power in fundamental frequency chamber by acoustooptic Q-switching.These 1.06 microns of fundamental frequency light are as the pump light of optical parametric oscillation, and pumping nonlinear optical crystal 5 produces the flashlight of 1.5 micron wavebands.Flashlight is enclosed in Compound Cavity mirror 4 and output cavity mirror 6 forms vibration reinforcement in optical parametric oscillation chamber, as the pump light of secondary light parametric oscillation, pumping same nonlinear optical crystal 5 produces the middle-infrared band flashlight of 2.6 micron wavebands, is exported by output cavity mirror 6.Under the pump power of 10W, realize the mid-infrared laser of 2.6 more than 1W micron wavebands, light phototranstormation efficiency is more than 10%.
Laser crystal 2 use Nd:YAG or Nd:YAP or Nd:GdVO
4replace Nd:YVO
4, obtained equally the middle-infrared band flashlight of 2.6 micron wavebands.
Claims (3)
1. a middle-infrared band Self-cascading optical parametric oscillator laser, it is characterized in that: in light path, place successively the chamber mirror that is all-trans, the laser crystal of semiconductor laser end faces/side faces pumping, acoustooptic Q-switching, Compound Cavity mirror, nonlinear optical crystal and output cavity mirror, chamber mirror and the output cavity mirror composition fundamental frequency chamber of being wherein all-trans, form optical parametric oscillation chamber by Compound Cavity mirror and output cavity mirror, the deielectric-coating plating on described Compound Cavity mirror is to the high transmission of basic frequency laser and simultaneously to the reflection of growing tall of the signal light-wave of first and secondary light parametric oscillation, the deielectric-coating plating on described output cavity mirror sees through the flashlight part of basic frequency laser and the high reflection of first flashlight and while secondary light parametric oscillation.
2. a kind of middle-infrared band Self-cascading optical parametric oscillator laser according to claim 1, is characterized in that: described nonlinear optical crystal is to be the arsenic acid titanyl potassium by noncritical phase matching cutting.
3. a kind of middle-infrared band Self-cascading optical parametric oscillator laser according to claim 1, is characterized in that: the laser crystal of described semiconductor laser end faces/side faces pumping is neodymium ion doped laser crystal.
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| CN201410312024.0A CN104078832A (en) | 2014-07-02 | 2014-07-02 | Middle-infrared wave band self-cascade optical parametric oscillation laser device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105233424A (en) * | 2015-11-09 | 2016-01-13 | 温州大学 | Visible-waveband multifunctional laser medical instrument |
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| US6175578B1 (en) * | 1995-10-26 | 2001-01-16 | Mitsubishi Cable Industries, Ltd. | Optical device |
| CN101103501A (en) * | 2004-11-30 | 2008-01-09 | 电子科学工业公司 | Nonlinear crystal modifications for durable high-power laser wavelength conversion |
| CN101242076A (en) * | 2008-02-28 | 2008-08-13 | 山东大学 | A KTA crystal full solid Raman laser |
| CN101673917A (en) * | 2009-09-29 | 2010-03-17 | 天津大学 | End-pumped mid-infrared KTA parametric oscillator |
| CN101895054A (en) * | 2009-05-22 | 2010-11-24 | 清华大学 | Wavelength converting system and method |
| CN102709805A (en) * | 2012-03-21 | 2012-10-03 | 清华大学 | Method and device for realizing laser with wavelength greater than 3.7 microns |
-
2014
- 2014-07-02 CN CN201410312024.0A patent/CN104078832A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175578B1 (en) * | 1995-10-26 | 2001-01-16 | Mitsubishi Cable Industries, Ltd. | Optical device |
| CN101103501A (en) * | 2004-11-30 | 2008-01-09 | 电子科学工业公司 | Nonlinear crystal modifications for durable high-power laser wavelength conversion |
| CN101242076A (en) * | 2008-02-28 | 2008-08-13 | 山东大学 | A KTA crystal full solid Raman laser |
| CN101895054A (en) * | 2009-05-22 | 2010-11-24 | 清华大学 | Wavelength converting system and method |
| CN101673917A (en) * | 2009-09-29 | 2010-03-17 | 天津大学 | End-pumped mid-infrared KTA parametric oscillator |
| CN102709805A (en) * | 2012-03-21 | 2012-10-03 | 清华大学 | Method and device for realizing laser with wavelength greater than 3.7 microns |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105233424A (en) * | 2015-11-09 | 2016-01-13 | 温州大学 | Visible-waveband multifunctional laser medical instrument |
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