CN104078380A - Structure and method for monitoring N-type source drain ion implantation alignment degree through same type junction - Google Patents
Structure and method for monitoring N-type source drain ion implantation alignment degree through same type junction Download PDFInfo
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- CN104078380A CN104078380A CN201410357283.5A CN201410357283A CN104078380A CN 104078380 A CN104078380 A CN 104078380A CN 201410357283 A CN201410357283 A CN 201410357283A CN 104078380 A CN104078380 A CN 104078380A
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention provides a structure and method for monitoring N-type source drain ion implantation alignment degree through the same type junction. The monitoring structure comprises a light resistant zone and a N-type source drain ion implantation zone, wherein the N-type source drain ion implantation zone is composed of a N-type trap-N-type source drain electrode structure which comprises N-type traps, N-type source drain electrodes, gate electrodes, a dielectric layer and contact holes corresponding to the N-type source drain electrodes; the light resistant zone is composed of a N-type structure which comprises N-type traps, the gate electrodes, the dielectric layer and the contact holes corresponding to the dielectric layer; N-type source drain ions are implanted in the N-type source drain ion implantation zone and scanned by positive potential electron beams to obtain voltage lining degree images; the alignment degree of the light resistant zone can be monitored according to changed contact holes, so that the real-time monitoring of the alignment degree of the N-type source drain ion implantation in CMOC (Complementary Metal-Oxide-Semiconductor Transistor) is realized and the phenomenon that the electric leakage of a PMOS (P-channel Metal Oxide Semiconductor) is generated when the N-type source drain ions are implanted into the N-type traps of the PMOS is avoided.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of structure and method for supervising that utilizes homotype to tie to monitor N-type source leakage Implantation Aligning degree in CMOS.
Background technology
Along with development and the critical size of integrated circuit technology are scaled, polytechnic process window is more and more less, cmos device becomes one of electronic component important in existing integrated circuit, in the preparation process of cmos device, requirement to various manufacturing process is more and more higher, such as source-drain electrode Implantation Aligning degree etc.; As shown in Figure 1, for the electric leakage defect schematic diagram of the PMOS that obtains through electron beam scanning, find after deliberation, it is while leaking Implantation in N-type source, to produce Aligning degree deviation that PMOS produces one of formation reason of electric leakage defect, thereby cause having injected N-type source in the N-type trap in PMOS and leak ion, in Fig. 1, under negative potential electron beam scanning pattern, in dotted line frame, should be dark hole for the position display in bright hole, in the N-type trap of this explanation PMOS, inject N-type source and leaked ion, that is to say that N-type source leakage Implantation produces Aligning degree deviation.PMOS produces electric leakage defect will cause the even yield inefficacy of whole cmos device, thereby increase cost.Therefore it is very necessary, monitoring for this N-type source leakage Implantation Aligning degree.Implantation is leaked in N-type source, and to produce Aligning degree deviation be while leaking Implantation due to N-type source after all, covers that the photoresistance generation Aligning degree deviation of the N-type trap top of PMOS causes.Therefore, monitoring N-type source leakage Implantation Aligning degree deviation can realize by monitoring the photoresistance Aligning degree deviation of leaking in ion implantation process in this N-type source.
As shown in Figure 2, when Implantation is leaked in N-type source, photoresistance produces the various situation schematic diagrames of Aligning degree deviation, wherein, dotted line represents out-of-the way position, solid line represents normal position, can see, the situation of photoresistance generation deviation comprises: single direction offset-type (Fig. 2 (a)), excessive type (Fig. 2 (b)), interior receipts type (Fig. 2 (c)), rotary-type (Fig. 2 (d)), comprehensive (Fig. 2 (e)).Industry all adopts optical detection to monitor at present, but due to the complexity of Aligning degree deviation in the restriction of resolution and actual photoresist process, thereby be difficult to be monitored accurately, the more important thing is, its testing result cannot be set up and directly contact with caused electric leakage problem.
Therefore, urgent need can be leaked Implantation Aligning degree to N-type source in CMOS exactly and be carried out test structure and the method for monitoring in real time, thereby avoids the generation of PMOS device leak electricity and cause the problem of whole component failure to occur.
Summary of the invention
In order to overcome above problem, the present invention aims to provide structure and the method for in a kind of CMOS, utilizing the characteristic of homotype knot to monitor N-type source leakage Implantation Aligning degree, and utilize N-type source to leak the Aligning degree of the photoresistance adopting when Implantation, monitor N-type source and leak Implantation Aligning degree, thereby realize and N-type source is leaked to Implantation Aligning degree carries out accurately and effectively monitoring in real time, avoid injecting N-type source in the N-type trap of PMOS device and leak ion and produce electric leakage.
To achieve these goals, the invention provides a kind of structure of utilizing homotype knot monitoring N-type source to leak Implantation Aligning degree, described monitoring structure is arranged in the non-functional area of Semiconductor substrate, wherein, described monitoring structure comprises leakage ion implanted region, N-type source and photoresistance district, monitor described N-type source by the Aligning degree in described photoresistance district and leak Implantation Aligning degree, wherein
Leakage ion implanted region, described N-type source is made up of N-type trap-N-type source-drain electrode structure, comprise: the N-type trap arranging in nonfunctional area, the N-type source-drain electrode arranging in described N-type trap, leak the grid between ion trap in described N-type source, be positioned at the dielectric layer on surface, described nonfunctional area, and be arranged in described dielectric layer and the contact hole corresponding to described N-type source-drain electrode;
Described photoresistance district is made up of N-type well structure, comprising: the N-type trap arranging in nonfunctional area, and the grid between described N-type trap, is positioned at the dielectric layer on surface, nonfunctional area, and is arranged in described dielectric layer and the contact hole corresponding to described N-type trap;
In the voltage contrast striograph obtaining under positive potential electron beam scanning pattern, contact hole corresponding to described N-type trap-N-type source-drain electrode structure is shown as bright hole, and contact hole corresponding to described N-type well structure is shown as dark hole.
Preferably, the N-type trap in described monitoring structure is some parallel row equidistantly arranges, and described grid is some parallel row and equidistantly arranges; And the orthogonal thereto distribution of row at the row at described grid place and described N-type trap place;
In described photoresistance district, it between described grid, is only N-type trap; In leakage ion implanted region, described N-type source, between described grid, be provided with N-type trap and N-type source-drain electrode.
Preferably, in described monitoring structure, spacing, the width of described grid and the width of described N-type trap between spacing, described N-type trap between described grid are all identical.
Preferably, in the straight line that each outline line of described photoresistance district all can form at adjacent two described contact holes, find parallel with it straight line.
Preferably, described photoresistance district around leakage ion implanted region, described N-type source around setting.
The present invention also provides a kind of homotype N-type source of becoming a partner that utilizes to leak the method that Implantation Aligning degree is monitored, and it comprises preparation and two processes of electron beam scanning of monitoring structure, wherein,
The preparation of described monitoring structure comprises:
Step S01: the nonfunctional area of a Semiconductor substrate is provided, and leakage ion implanted region, N-type source and photoresistance district are set in described nonfunctional area;
Step S02: carry out successively the preparation of N-type trap and grid in described nonfunctional area;
Step S03: cover one deck N-type source and leak Implantation photoresistance in described photoresistance district;
Step S04: carry out N-type source leakage Implantation in the N-type trap of leakage ion implanted region, described N-type source, thereby form N-type source-drain electrode in this N-type trap;
Step S05: remove described N-type source and leak Implantation photoresistance;
Step S06: form dielectric layer on surface, described nonfunctional area, form contact hole in described dielectric layer and above corresponding respectively to the described N-type trap in described N-type source-drain electrode and described photoresistance district;
Described electron beam scanning process comprises:
Step S07: under positive potential electron beam scanning pattern, adopt electron beam to scan described monitoring structure, obtain the virtual voltage contrast striograph of described test structure; Wherein, contact hole corresponding to described N-type trap-N-type source-drain electrode structure is shown as bright hole, and the contact hole corresponding to described N-type well structure in described photoresistance district is shown as dark hole;
Step S08: described monitoring structure is set at the normal voltage contrast striograph without in Aligning degree deviation situation; Wherein, contact hole corresponding to described N-type trap-N-type source-drain electrode structure is shown as bright hole, and the contact hole corresponding to described N-type well structure in described photoresistance district is shown as dark hole;
Step S09: described virtual voltage contrast striograph and described normal voltage contrast striograph are contrasted, find out the contact hole that brightness changes occurs: wherein, comprise in described N-type trap-N-type source-drain electrode structure from bright hole and become the contact hole that is become bright hole in the contact hole in dark hole or described N-type well structure from dark hole;
Step S10: the data of the described contact hole changing according to found out generation brightness obtain the Aligning degree deviation in described photoresistance district, that is to say described N-type source leakage Implantation Aligning degree deviation.
Preferably, in described step S07, the parameter that described electron beam scans described monitoring structure comprises: pixel is 30～80nm, and landing energy is 500～1200eV, and electric current is 50～100nA.
Preferably, described step S10 specifically comprises:
Step S101: the described contact hole changing according to described generation brightness is judged the offset direction in described photoresistance district;
Step S102: whether the side-play amount of analyzing described contact hole according to described offset direction is again the integral multiple of adjacent described contact hole spacing on described offset direction;
Step S103: if not, described contact hole spacing is divided into some sections, again prepare described monitoring structure and electron beam scanning process according to the distance values of described each section, until described virtual voltage contrast striograph is identical with described normal voltage image data.
Preferably, described photoresistance district around leakage ion implanted region, described N-type source around setting.
Structure and the method for utilizing homotype junction characteristic to monitor N-type source leakage Implantation Aligning degree of the present invention, adopt under positive potential electron beam scanning pattern homotype NN to become conducting state and N trap is not on-state separately principle, thereby design the monitoring structure with N-type trap-N-type source leakage ion trap structure and independent N-type well structure, in monitoring structure, mark off leakage ion implanted region, HeNXing source, photoresistance district, photoresistance district is made up of independent N-type well structure, and leakage ion implanted region, N-type source is made up of N-type trap-N-type source-drain electrode structure; Under positive potential electron beam scanning pattern, the structural contact hole of N-type trap-N-type source-drain electrode is shown as bright hole, and the contact hole on N-type well structure is shown as dark hole separately, therefore, once Aligning degree deviation occurs in photoresistance district, will cause corresponding contact hole generation brightness to change; Then according to the data that the contact hole that brightness changes occurs such as position data, quantity etc. obtain the Aligning degree deviation in photoresistance district, that is to say that N-type source leaks Implantation Aligning degree deviation; Thereby realize the real-time monitoring of N-type source in CMOS being leaked to Implantation Aligning degree, avoid the unnecessary waste of PMOS component failure and cost.
Brief description of the drawings
Fig. 1 is the electric leakage defect schematic diagram of the PMOS that obtains through electron beam scanning
When Fig. 2 is N-type source leakage Implantation, photoresistance produces the various situation schematic diagrames of Aligning degree deviation
Fig. 3 is the schematic top plan view that the monitoring structure of Implantation Aligning degree is leaked in the N-type source of a preferred embodiment of the present invention
Fig. 4 is partial cross section's structural representation that the monitoring structure of Implantation Aligning degree is leaked in the N-type source of a preferred embodiment of the present invention
The schematic flow sheet of the method for supervising of Implantation Aligning degree is leaked in Fig. 5 N-type of the present invention source
Fig. 6-11 are the corresponding plan structure schematic diagram of each preparation process of the monitoring structure of a preferred embodiment of the present invention
Figure 12 is the cross section structure of monitoring structure and the voltage contrast image schematic diagram of contact hole thereof that contains leakage ion implanted region, N-type source and photoresistance district under the positive potential electron beam scanning pattern of a preferred embodiment of the present invention
Figure 13 is the normal voltage contrast striograph of the monitoring structure of a preferred embodiment of the present invention
What Figure 14 was a preferred embodiment of the present invention carries out the virtual voltage contrast image of the monitoring structure forming after electron beam scanning and the contrast schematic diagram of normal voltage contrast image
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
The principle of monitoring structure of the present invention and method for supervising is: according in positive potential electron beam scanning process, the conducting of N-type trap-N-type source-drain electrode structure, and the not conducting of N-type well structure, thereby corresponding contact hole shows the characteristic of different brightness and carries out Aligning degree judgement, under positive potential condition, the contact hole of the former correspondence is shown as bright hole, and contact hole corresponding to the latter is shown as dark hole; In the time that the position generation Aligning degree deviation of the photoresistance in ion implantation process is leaked in N-type source, the photoresistance district in monitoring structure also can change, the contact hole that originally should be shown as bright hole (or dark hole) is shown as dark hole (or bright hole), the Aligning degree deviation that the Aligning degree deviation that obtains photoresistance district according to the position of the contact hole changing is also N-type source leaks Implantation.
Why not conducting of N-type well structure, is shown as dark hole, be due to: under positive potential condition, the secondary electron major part of incident in electron beam is blocked in this body structure surface, thereby contact hole corresponding to this structure is shown as dark hole; In like manner, the conducting of N-type trap-N-type source-drain electrode structure, is shown as bright hole, be due to: under positive potential condition, the secondary electron major part of incident in electron beam is absorbed by this structure, flows to N-type trap by N-type source-drain electrode, thereby contact hole corresponding to this structure is shown as bright hole.
Monitoring structure of the present invention, is arranged in Semiconductor substrate, and the Semiconductor substrate that the present invention adopts has functional areas and nonfunctional area, and nonfunctional area refers to can not affect the region of Semiconductor substrate function such as Cutting Road, virtual region etc.Semiconductor substrate can be, but not limited to as silicon substrate; Monitoring structure of the present invention is arranged in the non-functional area of Semiconductor substrate, and it includes leakage ion implanted region, N-type source and photoresistance district.
This is because the photoresistance generation Aligning degree deviation in Implantation region is leaked in blocking without carrying out N-type source that one of reason of PMOS leaky adopts while being N-type source leakage Implantation, leaks ion thereby cause having injected N-type source in the N-type trap of PMOS; Thus, monitoring N-type source leakage Implantation Aligning degree can be realized by the Aligning degree of monitoring this photoresistance, and the Aligning degree of this photoresistance can utilize the Aligning degree in the photoresistance district in monitoring structure to monitor.Therefore, leakage ion implanted region, N-type source and photoresistance district are set in monitoring structure, leakage ion implanted region, N-type source is the region of leaking ion for injecting N-type source, photoresistance district is the region of not injecting any type source leakage ion, in the process of injecting N-type source leakage ion, photoresistance is set in photoresistance district and leaks Implantation to photoresistance district for stopping N-type source, if there is Aligning degree deviation in photoresistance district, can cause N-type source to leak Implantation generation Aligning degree deviation, therefore, can find N-type source to leak the Aligning degree deviation of Implantation by the Aligning degree deviation in monitoring photoresistance district.
Leakage ion implanted region, N-type source is made up of N-type trap-N-type source-drain electrode structure, comprise: the N-type trap arranging in nonfunctional area, the N-type source-drain electrode arranging in N-type trap, grid between N-type source-drain electrode, be positioned at the dielectric layer on surface, nonfunctional area, and be arranged in dielectric layer and the contact hole corresponding to N-type source-drain electrode.
Photoresistance district is made up of N-type well structure, comprising: the N-type trap arranging in nonfunctional area, the grid between N-type trap, is positioned at the dielectric layer on surface, nonfunctional area, and is arranged in dielectric layer and the contact hole corresponding to N-type trap.It should be noted that, photoresistance district should not block above the N-type trap of leakage ion implanted region, N-type source, such as the outline line in photoresistance district can be above the region above grid or between N-type trap.
In the voltage contrast striograph obtaining under positive potential electron beam scanning pattern, contact hole corresponding to N-type trap-N-type source-drain electrode structure is shown as bright hole, and the contact hole that N-type well structure is corresponding is shown as dark hole.
It should be noted that, in the present invention, in the dielectric layer above the grid in leakage ion implanted region, HuoNXing source, photoresistance district, also can be provided with contact hole.
Below with reference to accompanying drawing 3-4 and specific embodiment, the structure of utilizing homotype junction characteristic monitoring N-type source leakage Implantation Aligning degree is described in further detail.It should be noted that, accompanying drawing all adopts very the form simplified, uses non-ratio accurately, and only in order to object convenient, that clearly reach aid illustration the present embodiment.
Refer to Fig. 3, the schematic top plan view of leaking the monitoring structure of Implantation Aligning degree for the N-type source of a preferred embodiment of the present invention; In the present embodiment, monitoring structure is arranged in the nonfunctional area 1 of Semiconductor substrate, and N-type trap 2 is arranged to some parallel columns of equidistantly arranging, and grid 3 is arranged to some parallel row of equidistantly arranging, and arranges with N-type trap 2 is orthogonal thereto; Article two, the region that dotted line frame forms is photoresistance district a, WeiNXing source, the region leakage ion implanted region b that inner dotted line circle is lived; In photoresistance district a, it between grid 3, is N-type trap 2; In the b of leakage ion implanted region, N-type source, between grid 3, be N-type trap 2 and N-type source-drain electrode 5; Between grid 3 and respectively above the N-type trap 2 in photoresistance district and N-type source-drain electrode 5, be provided with contact hole 6; It should be noted that, for the ease of expressing, display dielectric layer not in accompanying drawing 3.
In the present invention, photoresistance district a can also have following characteristics: in the straight line that a each outline line in photoresistance district all can form at adjacent two contact holes, find parallel with it straight line.Like this, there is when skew at photoresistance district a, can ensure that each contact hole generation brightness on straight line that each outline line parallels with it contact hole forms changes more consistent, thereby can effectively judge photoresistance district a and occur the direction of skew; Or in the time that photoresistance district a rotates, situation about changing according to the brightness of the contact hole on the straight line paralleling with its outline line, also can effectively judge the data such as the anglec of rotation.That is to say that skew or the rotation of the profile paralleling with contact hole place straight line to photoresistance district a is all very responsive, thereby effectively detect the Aligning degree situation in photoresistance district.It should be noted that, no matter how the outline line of photoresistance district a arranges, and it all can not block the N-type trap top in leakage ion implanted region, N-type source, and this just requires the outline line of photoresistance district a above the region between N-type trap or above grid.
In the present embodiment, as shown in Figure 3, photoresistance district a around the b of leakage ion implanted region, N-type source around setting.The square that photoresistance district a is hollow out, the region of middle hollow out can be, but not limited to as rhombus, can also be other polygon or irregular figure etc.Each limit of the outline of photoresistance district a parallels with horizontal line or vertical curve that adjacent contact hole forms, in the straight line that each limit of the rhombus of middle hollow out all can form at adjacent two contact holes, finds parallel with it straight line.For example, each limit of rhombus parallels with adjacent contact hole straight line composition and that be 45 degree with horizontal line angle; Or each limit of rhombus parallels with adjacent contact hole straight line composition and that be 60 degree with horizontal sextant angle etc.
For the ease of subsequent calculations Aligning degree deviation, in the monitoring structure of the present embodiment, spacing, the width of grid and the width of N-type trap between spacing, N-type trap between grid are all identical.But the invention is not restricted to this.
For the ease of clear complete expression monitoring structure of the present invention, refer to Fig. 4, list the cross section structure schematic diagram that contains leakage ion implanted region, N-type source and photoresistance district of a preferred embodiment of the present invention; Wherein, in dotted line frame, be photoresistance district; Leakage ion implanted region, N-type source comprises: the N-type trap 2 arranging in nonfunctional area 1, the N-type source-drain electrode 5 arranging in N-type trap 2, grid (not shown) between N-type source-drain electrode 5, be positioned at the dielectric layer 7 on 1 surface, nonfunctional area, and be arranged in dielectric layer 7 and the contact hole 6 corresponding to N-type source-drain electrode 5.Photoresistance district comprises: the N-type trap 2 arranging in nonfunctional area 1, the grid (not shown) between N-type trap 2, is positioned at the dielectric layer 7 on 1 surface, nonfunctional area, and is arranged in dielectric layer 7 and the contact hole 7 corresponding to N-type trap 2.
The method for supervising that Implantation Aligning degree is leaked in N-type source below with reference to accompanying drawing 5-14 and specific embodiment is described in further detail.It should be noted that, accompanying drawing all adopts very the form simplified, uses non-ratio accurately, and only in order to object convenient, that clearly reach aid illustration the present embodiment.
Refer to Fig. 5, for leaking the schematic flow sheet of the method for supervising of Implantation Aligning degree in N-type of the present invention source; The method for supervising of N-type of the present invention source leakage Implantation Aligning degree comprises preparation and two processes of electron beam scanning of monitoring structure:
First, referring to Fig. 6-11, is the corresponding plan structure schematic diagram of each preparation process of the monitoring structure of a preferred embodiment of the present invention; The monitoring structure of the present embodiment adopts the monitoring structure in above-mentioned accompanying drawing 3 and accompanying drawing 4, describes as an example of the method prepared and adopt the monitoring structure in electron beam scanning accompanying drawing 3 and accompanying drawing 4 example; The preparation of the monitoring structure of the present embodiment comprises:
Step S01: refer to Fig. 6, the nonfunctional area 1 of a Semiconductor substrate is provided, and N-type source leakage ion implanted region b and photoresistance district a are set in nonfunctional area 1;
Concrete, in the present invention, Semiconductor substrate comprises for the preparation of the functional areas of cmos device and for the preparation of the nonfunctional area of monitoring structure; Semiconductor substrate can be any Semiconductor substrate, and in the present embodiment, Semiconductor substrate is silicon substrate; For ease of describing, in Fig. 6-11, only show the monitoring structure schematic diagram of nonfunctional area 1, and the structure of cmos device in functional areas and be prepared as prior art does not repeat them here.Photoresistance district a is the region of not carrying out any type source and leaking Implantation, for as the regions of two dotted line frame formations in Fig. 6; Leakage ion implanted region, N-type source b is the region that inner dotted line circle is lived.Monitoring structure in this method adopts the structure shown in Fig. 3 in above-described embodiment, and its structure is repeated no more.
Step S02: refer to Fig. 7, carry out successively the preparation of N-type trap 2 and grid 3 in nonfunctional area 1;
Concrete, in the present embodiment, can adopt existing method in nonfunctional area 1, to carry out successively the preparation of N-type trap 2 and grid 3, the present invention repeats no more this; It should be noted that, in order to realize the real-time monitoring of the N-type source in CMOS preparation technology being leaked to Implantation, in the process of the monitoring structure in preparation the present invention, in functional areas also at interlock system for cmos device, like this, once find that in monitoring structure Aligning degree deviation appears in photoresistance district, can know that Aligning degree deviation appears in the N-type source leakage Implantation of nmos device, thereby can stop preparation, and make corresponding correction and eliminate N-type source leakage Implantation Aligning degree deviation.N-type trap 2 is arranged to some parallel columns of equidistantly arranging, and grid 3 is arranged to some parallel row of equidistantly arranging, and arranges with N-type trap 2 is orthogonal thereto; Spacing, the width of grid and the width of N-type trap between spacing, the adjacent N-type trap of neighboring gates are all identical.
Step S03: refer to Fig. 8, cover one deck N-type source and leak Implantation photoresistance 4 in photoresistance district;
Concrete, in the present embodiment, leak ion implantation process owing to all carrying out N-type source on the nonfunctional area 1 at whole silicon substrate, need to adopt photoresistance will not carry out any type source leakage Implantation region and shelter from; Here, in the preparation process of monitoring structure, the photoresistance that N-type source adopts while leaking Implantation is called N-type source and leaks Implantation photoresistance 4, and the region that Implantation photoresistance 4 correspondences are leaked in N-type source is photoresistance district; That is to say, photoresistance district is the region that need not carry out any type source leakage Implantation, and the shape of Implantation photoresistance 4 and the shape in photoresistance district and big or small identical are leaked in N-type source.
Step S04: refer to Fig. 9, leak Implantation to carrying out N-type source in the N-type trap 2 in leakage ion implanted region, N-type source, thereby form N-type source-drain electrode 5 in this N-type trap;
Concrete, in the present embodiment, leak in N-type source under the protection of Implantation photoresistance 4, only need to carry out N-type source to the region outside photoresistance district and leak and in the N-type trap 2 of Implantation, carry out N-type source and leak Implantation; Each technological parameter that Implantation is leaked in N-type source can require to set according to actual process, and the present invention is not restricted this.
Step S05: refer to Figure 10, remove N-type source and leak Implantation photoresistance 4;
Concrete, in the present embodiment, after N-type source leakage Implantation completes, can be, but not limited to wet etching and remove N-type source leakage Implantation photoresistance 4.
Step S06: refer to Figure 11, form dielectric layer (in Figure 11 not display dielectric layer) on nonfunctional area surface, form contact hole 6 in dielectric layer and above corresponding respectively to the N-type trap 2 in N-type source-drain electrode 5 and photoresistance district a;
Concrete, in the present embodiment, can be, but not limited to adopt chemical vapour deposition technique metallization medium layer, the material of dielectric layer can but be not limited to for silica.
In the present embodiment, can adopt prior art to form contact hole, comprise and adopt photoetching and plasma dry etch process in dielectric layer, to form contact hole structure, then filled conductive material in contact hole structure, such as tungsten, thereby form the contact hole with conducting function.
So far, the monitoring structure in the present embodiment is just made complete, below in conjunction with accompanying drawing 12-14, the electron beam scanning process of embodiment is described further, and the electron beam scanning process of the present embodiment comprises the following steps:
Step S07: under positive potential electron beam scanning pattern, adopt electron beam to scan monitoring structure, obtain the virtual voltage contrast striograph of test structure;
Concrete, in the present embodiment, the parameter that electron beam scans monitoring structure can require to set according to actual process, preferably, Ke Yiwei: pixel is 30～80nm, landing energy is 500～1200eV, electric current is 50～100nA.Voltage contrast image reflects into figure and is referred to as voltage contrast striograph; Under positive potential electron beam scanning pattern, contact hole corresponding to N-type trap-N-type source-drain electrode structure in leakage ion implanted region, N-type source in monitoring structure is shown as bright hole, the contact hole that in photoresistance district, N-type well structure is corresponding is shown as dark hole, as shown in figure 12, the cross section structure of the monitoring structure that contains leakage ion implanted region, N-type source and photoresistance district under the positive potential electron beam scanning pattern for a preferred embodiment of the present invention and the voltage contrast image schematic diagram of contact hole thereof, wherein, the region of two dotted line frame formations is photoresistance district; Contact hole shows that Huo An hole, bright hole is according to the corresponding structure of contact hole, the degree of absorption of the secondary electron in electron beam to be decided; Under positive potential electron beam scanning pattern, in the time of the corresponding structure conducting of contact hole, absorb a large amount of secondary electrons, thereby contact hole is shown as bright hole, otherwise, be shown as dark hole; In the present embodiment, under positive potential electron beam scanning pattern, the homotype NN structure that N-type trap 2-N type source-drain electrode 5 forms is conducting state, it can absorb a large amount of secondary electrons, the N-type trap 2 of secondary electron below N-type source-drain electrode 5 flows to it, thus contact hole 6 corresponding to this structure is shown as bright hole; And N-type trap 2 structures in photoresistance district a are not on-state, a large amount of secondary electrons is gathered in N-type trap 2 surfaces, thereby contact hole 6 corresponding to this structure is shown as dark hole.
Step S08: monitoring structure is set at the normal voltage contrast striograph without in Aligning degree deviation situation;
Concrete, refer to Figure 13, be the normal voltage contrast striograph of the monitoring structure of a preferred embodiment of the present invention; According to aforementioned principles, without Aligning degree deviation in the situation that, in leakage ion implanted region, N-type source, contact hole corresponding to N-type trap 2-N type source-drain electrode 5 structures is shown as bright hole, and in photoresistance district, contact hole corresponding to N-type trap 2 structures is shown as dark hole.Normal voltage contrast striograph is without the data in Aligning degree deviation situation, can related data input be obtained to normal voltage contrast striograph according to existing graphic simulation software.
Here, normal voltage contrast image can also obtain in the following manner: Defect Scanning formula is set in electron beam scanning instrument, setting at least one contact hole in monitoring structure of the present invention occurs extremely, to go out the normal voltage contrast striograph of monitoring structure according to the type simulation of monitoring structure.
Can also be the origin of coordinates by an ad-hoc location of setting in monitoring structure, the position data of each contact hole and sized data are input in simulation softward, obtain normal voltage contrast striograph through analogue simulation.
Step S09: virtual voltage contrast striograph and normal voltage contrast striograph are contrasted, find out the contact hole that brightness changes; Wherein, comprise in N-type trap-N-type source-drain electrode structure from bright hole and become the contact hole that is become bright hole in the contact hole in dark hole or N-type well structure from dark hole;
Concrete, refer to Figure 14, for the virtual voltage contrast image that carries out the monitoring structure forming after electron beam scanning of a preferred embodiment of the present invention and the contrast schematic diagram of normal voltage contrast image, for the ease of expressing, the N-type source-drain electrode in display monitoring structure not in Figure 14, and the nonfunctional area of Semiconductor substrate.
Under virtual voltage contrast striograph and the contrast of normal voltage contrast striograph, there is Aligning degree deviation situation and can effectively detect in photoresistance district; In the time there is Aligning degree deviation in photoresistance district, that is to say that actual photoresistance district occurs in the situation of various misalignment, a certain contact hole in normal voltage contrast striograph in corresponding data and virtual voltage contrast striograph corresponding data there will be difference, this just shows that actual photoresistance district has produced Aligning degree deviation, and the data such as position or quantity that produce these contact holes of image variation can reflect that the situation of deviation of the alignment occurs in photoresistance district.
In Figure 14, thick dashed line represents actual photoresistance district, fine dotted line represents not occur the photoresistance district of skew, there is overall offset to the right in actual photoresistance district, in normal voltage contrast striograph, the contact hole that shows dark hole on the N-type well structure in photoresistance district is shown as bright hole in virtual voltage contrast striograph, and the contact hole that is shown as bright hole in N-type trap-N-type source-drain electrode structure is shown as dark hole in virtual voltage contrast striograph.
Step S10: the data of the contact hole changing according to found out generation brightness obtain the Aligning degree deviation in photoresistance district, that is to say N-type source leakage Implantation Aligning degree deviation.
Concrete, refer to Figure 14, according to the data that the contact hole that image changes occurs such as position datas such as the distances in contact hole spacing, contact hole and photoresistance district, and the quantity of the contact hole of generation ANOMALOUS VARIATIONS etc., can calculate photoresistance district side-play amount, i.e. Aligning degree deviation; In Figure 14, show, photoresistance district is offset to the right, and side-play amount is the spacing of two contact holes adjacent in horizontal direction, that is to say N-type source-drain electrode Implantation Aligning degree deviation.It should be noted that, in actual monitored process, may there is the situation of the integral multiple that is not contact hole spacing in photoresistance district side-play amount, while so having injected N-type source leakage ion in the skew of photoresistance district causes the N-type well region in photoresistance district, this injection phase also can be shown as bright hole, this just causes the inaccuracy of the numerical value of the integral multiple of only getting contact hole spacing unavoidably, now, as long as make actual photoresistance district shelter from all N-type traps below it by adjustment.Such as, this step S10 can comprise following process:
Step S101: the offset direction of judging photoresistance district according to the contact hole that brightness variation occurs;
Here, can find by contrast the offset direction of the contact hole that brightness variation occurs, for example, in Figure 14, in normal voltage contrast striograph, leftmost dark hole, photoresistance district has become bright hole, and the dark hole on the right in the hollow out region in photoresistance district has become bright hole, and the bright hole on the left side becomes dark hole, this shows, photoresistance district is offset to the right.
Step S102: whether be the integral multiple of adjacent contact pitch of holes on offset direction according to the side-play amount of offset direction analysis contact hole again;
Here, according to generation offset direction, photoresistance district, the variable condition of corresponding contact hole in initial setting normal voltage contrast striograph and virtual voltage contrast striograph; In the time that side-play amount is integral multiple, photoresistance district all can change along the brightness of the contact hole of the head and end of offset direction; In the time that side-play amount is not integral multiple, photoresistance district only has one end to change along the brightness of the contact hole of the head and end of offset direction.
Step S103: if not, described contact hole spacing being divided into some sections, the non-integer part using the distance values of described each section as described side-play amount, obtains described test side-play amount;
Here, in adjacent two contact hole spacing ranges of initial setting real offset non-integer part on offset direction, this scope is further divided into multiple intervals, such as 1.2,1.4,1.6,1.8 etc.;
Step S104: again prepare monitoring structure and electron beam scanning process according to test side-play amount, until virtual voltage contrast striograph is identical with described normal voltage image data.
Utilize these side-play amounts to adjust actual photoresistance district, until the voltage contrast striograph of actual monitored structure is identical with normal voltage contrast striograph.But, according to the contrast of virtual voltage contrast striograph and normal voltage image data, can also adopt existing other mathematical method to obtain the Aligning degree deviation in photoresistance district, the present invention is not restricted this.For example, set side-play amount within the scope of x～x+1, wherein x is nonnegative integer, adopt second iteration method or other iterative method, progressively choose side-play amount, and adjust the position in photoresistance district according to this side-play amount, again prepare monitoring structure and electron beam scanning, until virtual voltage contrast striograph is identical with described normal voltage image data.
It should be noted that, in electron beam scanning process for CMOS, owing to there being dissimilar defect in cmos device, need to set up multiple dissimilar monitoring structures, the voltage contrast image that so how finds accurately needed monitoring structure during at electron beam scanning is also very important; Therefore,, in another preferred embodiment of the present invention, electron beam scanning process can also specifically comprise:
Steps A 01: utilize electron beam scanning instrument according to defects detection formula, monitoring structure to be scanned the voltage contrast striograph of the physical location that obtains the contact hole in monitoring structure; Here, the voltage contrast striograph of the physical location of contact hole can obtain by taking electronic scanning picture.
Concrete, in defects detection formula, set in dissimilar monitoring structure and have at least a contact hole to occur defect; Not necessarily real defect of said defect, just a kind of hypothesis; Occur that according to hypothesis the position of defect obtains the categorical data of monitoring structure, and contrast with the striograph of contact hole physical location, find the striograph of the contact hole physical location of the monitoring structure in the present invention.
Steps A 02: set up defects detection formula in electron beam scanning instrument, obtain the voltage contrast striograph of the normal place of the contact hole in monitoring structure according to defects detection formula; Here, the voltage contrast striograph of the normal place of contact hole can obtain by digital simulation program;
Steps A 03: contrast according to the voltage contrast striograph of the voltage contrast striograph of physical location and normal place, obtain the Aligning degree deviation profile data of the physical location of contact hole;
Steps A 04: the Aligning degree deviation that obtains photoresistance district according to above-mentioned Aligning degree deviation profile data.
In sum, structure and the method for utilizing homotype junction characteristic to monitor N-type source leakage Implantation Aligning degree of the present invention, adopt under positive potential scan pattern homotype NN to become conducting state and N trap is not on-state separately principle, thereby design the monitoring structure with N-type trap-N-type source leakage ion trap structure and independent N-type well structure, in monitoring structure, mark off leakage ion implanted region, HeNXing source, photoresistance district, photoresistance district is made up of independent N-type well structure, and leakage ion implanted region, N-type source is made up of N-type trap-N-type source-drain electrode structure; Under positive potential electron beam scanning pattern, the structural contact hole of N-type trap-N-type source-drain electrode is shown as bright hole, and the contact hole on N-type well structure is shown as dark hole separately, therefore, once Aligning degree deviation occurs in photoresistance district, will cause corresponding contact hole generation brightness to change; Then according to the data that the contact hole that brightness changes occurs such as position data, quantity etc. obtain the Aligning degree deviation in photoresistance district, that is to say that N-type source leaks Implantation Aligning degree deviation; Thereby realize the real-time monitoring of N-type source in CMOS being leaked to Implantation Aligning degree, avoid the unnecessary waste of PMOS component failure and cost.
Although the present invention discloses as above with preferred embodiment; right described embodiment only gives an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (9)
1. a structure of utilizing homotype knot monitoring N-type source to leak Implantation Aligning degree, described monitoring structure is arranged in the non-functional area of Semiconductor substrate, it is characterized in that, described monitoring structure comprises leakage ion implanted region, N-type source and photoresistance district, monitor described N-type source by the Aligning degree in described photoresistance district and leak Implantation Aligning degree, wherein
Leakage ion implanted region, described N-type source is made up of N-type trap-N-type source-drain electrode structure, comprise: the N-type trap arranging in nonfunctional area, the N-type source-drain electrode arranging in described N-type trap, leak the grid between ion trap in described N-type source, be positioned at the dielectric layer on surface, described nonfunctional area, and be arranged in described dielectric layer and the contact hole corresponding to described N-type source-drain electrode;
Described photoresistance district is made up of N-type well structure, comprising: the N-type trap arranging in nonfunctional area, and the grid between described N-type trap, is positioned at the dielectric layer on surface, nonfunctional area, and is arranged in described dielectric layer and the contact hole corresponding to described N-type trap;
In the voltage contrast striograph obtaining under positive potential electron beam scanning pattern, contact hole corresponding to described N-type trap-N-type source-drain electrode structure is shown as bright hole, and contact hole corresponding to described N-type well structure is shown as dark hole.
2. monitoring structure according to claim 1, is characterized in that, the N-type trap in described monitoring structure is some parallel row equidistantly arranges, and described grid is some parallel row and equidistantly arranges; And the orthogonal thereto distribution of row at the row at described grid place and described N-type trap place;
In described photoresistance district, it between described grid, is only N-type trap; In leakage ion implanted region, described N-type source, between described grid, be provided with N-type trap and N-type source-drain electrode.
3. monitoring structure according to claim 2, is characterized in that, in described monitoring structure, spacing, the width of described grid and the width of described N-type trap between spacing, described N-type trap between described grid are all identical.
4. monitoring structure according to claim 2, is characterized in that, in the straight line that each outline line of described photoresistance district all can form at adjacent two described contact holes, finds parallel with it straight line.
5. monitoring structure according to claim 1, is characterized in that, described photoresistance district around leakage ion implanted region, described N-type source around setting.
6. utilize the homotype N-type source of becoming a partner to leak the method that Implantation Aligning degree is monitored, it is characterized in that, comprise preparation and two processes of electron beam scanning of monitoring structure, wherein,
The preparation of described monitoring structure comprises:
Step S01: the nonfunctional area of a Semiconductor substrate is provided, and leakage ion implanted region, N-type source and photoresistance district are set in described nonfunctional area;
Step S02: carry out successively the preparation of N-type trap and grid in described nonfunctional area;
Step S03: cover one deck N-type source and leak Implantation photoresistance in described photoresistance district;
Step S04: carry out N-type source leakage Implantation in the N-type trap of leakage ion implanted region, described N-type source, thereby form N-type source-drain electrode in this N-type trap;
Step S05: remove described N-type source and leak Implantation photoresistance;
Step S06: form dielectric layer on surface, described nonfunctional area, form contact hole in described dielectric layer and above corresponding respectively to the described N-type trap in described N-type source-drain electrode and described photoresistance district;
Described electron beam scanning process comprises:
Step S07: under positive potential electron beam scanning pattern, adopt electron beam to scan described monitoring structure, obtain the virtual voltage contrast striograph of described test structure; Wherein, contact hole corresponding to described N-type trap-N-type source-drain electrode structure is shown as bright hole, and the contact hole corresponding to described N-type well structure in described photoresistance district is shown as dark hole;
Step S08: described monitoring structure is set at the normal voltage contrast striograph without in Aligning degree deviation situation; Wherein, contact hole corresponding to described N-type trap-N-type source-drain electrode structure is shown as bright hole, and the contact hole corresponding to described N-type well structure in described photoresistance district is shown as dark hole;
Step S09: described virtual voltage contrast striograph and described normal voltage contrast striograph are contrasted, find out the contact hole that brightness changes occurs: wherein, comprise in described N-type trap-N-type source-drain electrode structure from bright hole and become the contact hole that is become bright hole in the contact hole in dark hole or described N-type well structure from dark hole;
Step S10: the data of the described contact hole changing according to found out generation brightness obtain the Aligning degree deviation in described photoresistance district, that is to say described N-type source leakage Implantation Aligning degree deviation.
7. method for supervising according to claim 6, is characterized in that, in described step S07, the parameter that described electron beam scans described monitoring structure comprises: pixel is 30～80nm, and landing energy is 500～1200eV, and electric current is 50～100nA.
8. method for supervising according to claim 6, is characterized in that, described step S10 specifically comprises:
Step S101: the described contact hole changing according to described generation brightness is judged the offset direction in described photoresistance district;
Step S102: whether the side-play amount of analyzing described contact hole according to described offset direction is again the integral multiple of adjacent described contact hole spacing on described offset direction;
Step S103: if not, described contact hole spacing is divided into some sections, again prepare described monitoring structure and electron beam scanning process according to the distance values of described each section, until described virtual voltage contrast striograph is identical with described normal voltage image data.
9. method for supervising according to claim 6, is characterized in that, described photoresistance district around leakage ion implanted region, described N-type source around setting.
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