CN104065351B - Power amplifier based on monolithic integrated circuit - Google Patents
Power amplifier based on monolithic integrated circuit Download PDFInfo
- Publication number
- CN104065351B CN104065351B CN201310086540.1A CN201310086540A CN104065351B CN 104065351 B CN104065351 B CN 104065351B CN 201310086540 A CN201310086540 A CN 201310086540A CN 104065351 B CN104065351 B CN 104065351B
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- transistor
- resistor
- capacitor
- base stage
- colelctor electrode
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Abstract
The invention discloses a power amplifier based on a monolithic integrated circuit. The power amplifier comprises a direct-current power source, an ampere meter, a voltmeter, ten transistors, a diode, three capacitors and ten resistors. According to the invention, the integrated circuit is adopted, so that the power amplifier is strong in anti-interference capability; the power amplifier has the advantages of simple circuit structure, relatively strong anti-interference capability and relatively long service life.
Description
Technical field
The present invention relates to a kind of power amplifier, more particularly, to a kind of power amplifier based on monolithic integrated optical circuit.
Background technology
At present, the requirement to modern shipborne radar has：Improve target acquisition distance, Anti-jamming Ability for Radar, data with new
Rate, functional reliability and shortening available machine time.And radar antenna transmitting and the vertical direction broad beam Existential Space receiving select
Property is poor；Target elevation can not be measured；Visit in radar because of the interference between direct radio ripple and sea surface reflection radio wave
Survey in region and there is Pattern nulling；Amplifier for carrier-borne antenna；High elevation angle airbound target detection poor performance；Anti-interference energy
Power is poor；So it is accomplished by receiving by its signal of antenna pair and sending, and aerial signal, from anti-interference, it requires and it is believed
Number amplification is received and is sent.But, currently used for receive with send antenna signal amplifier, poor anti jamming capability, no
Amplification that can accurately to signal.
Content of the invention
The purpose of the present invention is that to provide to solve the above problems and a kind of is put based on the power of monolithic integrated optical circuit
Big device.
The present invention is achieved through the following technical solutions above-mentioned purpose：
The present invention include dc source, ammeter, voltmeter, the first transistor, transistor seconds, third transistor,
Four transistors, the 5th transistor, the 6th transistor, the 7th transistor, the 8th transistor, the 9th transistor, the tenth transistor, two
Pole pipe, the first capacitor, the second capacitor, the 3rd capacitor, first resistor device, second resistance device, 3rd resistor device, the 4th electricity
Resistance device, the 5th resistor, the 6th resistor, the 7th resistor, the 8th resistor, the 9th resistor and the tenth resistor, described
The cathode output end of dc source respectively with the first end of described 3rd resistor device, the positive pole of described diode and described second electricity
The first end of resistance device connects, and the second end of described 3rd resistor device is connected with the emitter stage of described transistor seconds, and described second
Second end of resistor is connected with the emitter stage of described the first transistor, the base stage of described the first transistor respectively with described two poles
The base stage of the negative pole of pipe, the first end of described 4th resistor and described transistor seconds connects, the collection of described the first transistor
Electrode respectively with the emitter stage of described third transistor, the emitter stage of described 4th transistor, described 5th transistor current collection
Pole, the colelctor electrode of described 6th transistor connect, the base stage of described third transistor respectively with described first capacitor first
The first end of end and described first resistor device connects, straight with described after the second described ammeter of end series connection of described first capacitor
The cathode output end of stream power supply connects, the colelctor electrode of described third transistor respectively with the base stage of described 5th transistor and described
The first end of the 9th resistor connects, the colelctor electrode of described 4th transistor respectively with the base stage of described 6th transistor and described
The first end of the tenth resistor connects, the second end emitter stage, institute with described 5th transistor respectively of described 9th resistor
State the base stage of the 8th transistor and the colelctor electrode of described 9th transistor connect, the second end of described tenth resistor respectively with institute
State emitter stage, the base stage of described 9th transistor, the base stage of described tenth transistor and described tenth crystal of the 6th transistor
The colelctor electrode of pipe connects, base stage first end, described second electric capacity with described 5th resistor respectively of described 4th transistor
First end connection, the second end of described 6th resistor and described 3rd capacitor of the first end of device and described 6th resistor
First end connect, the second end the second end, described 7th resistance with described second capacitor respectively of described 5th resistor
The first end of the first end of device, the first end of described voltmeter and described 8th resistor connects, and the of described 7th resistor
Two ends are connected with the base stage of described 7th transistor and the colelctor electrode of described 8th transistor respectively, described 7th transistor send out
Emitter-base bandgap grading is connected with the colelctor electrode of described transistor seconds, the emitter stage of described 9th transistor respectively with described tenth transistor
Emitter stage, the negative pole output of the emitter stage, the colelctor electrode of described 7th transistor and described dc source of described 8th transistor
End connect, the second end of described first resistor device, the second end of described 4th resistor, the second end of described 3rd capacitor,
Second end of the second end of described voltmeter and described 8th resistor is all connected with the cathode output end of described dc source.
The beneficial effects of the present invention is：
The present invention is by making power amplifier strong antijamming capability using integrated circuit；The present invention has circuit structure letter
Advantage single, that antijamming capability is relatively strong and service life is longer.
Brief description
Fig. 1 is a kind of circuit diagram of power amplifier based on monolithic integrated optical circuit of the present invention.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings：
As shown in figure 1, the present invention includes dc source, ammeter, voltage Table V, the first transistor VT1, transistor seconds
VT2, third transistor VT3, the 4th transistor VT4, the 5th transistor VT5, the 6th transistor VT6, the 7th transistor VT7,
Eight transistor VT8, the 9th transistor VT9, the tenth transistor VT10, diode VD, the first capacitor C1, the second capacitor C2,
3rd capacitor C3, first resistor device R1, second resistance device R2,3rd resistor device R3, the 4th resistor R4, the 5th resistor
R5, the 6th resistor R6, the 7th resistor R7, the 8th resistor R8, the 9th resistor R9 and the tenth resistor R10, direct current
The cathode output end in the source first end with the first end, the positive pole of diode VD and second resistance device R2 of 3rd resistor device R3 respectively
Connect, second end of 3rd resistor device R3 is connected with the emitter stage of transistor seconds VT2, second end of second resistance device R2 and the
The emitter stage of one transistor VT1 connects, base stage negative pole, the 4th resistor R4 with diode VD respectively of the first transistor VT1
First end and the base stage of transistor seconds VT2 connect, the colelctor electrode of the first transistor VT1 respectively with third transistor VT3
Emitter stage, the emitter stage of the 4th transistor VT4, the colelctor electrode of the 5th transistor VT5, the colelctor electrode of the 6th transistor VT6 connect,
The base stage of third transistor VT3 is connected with the first end of the first capacitor C1 and the first end of first resistor device R1 respectively, and first
It is connected with the cathode output end of dc source after the second end series electrical flow table of capacitor C1, the colelctor electrode of third transistor VT3
It is connected with the base stage of the 5th transistor VT5 and the first end of the 9th resistor R9 respectively, the colelctor electrode of the 4th transistor VT4 is respectively
It is connected with the base stage of the 6th transistor VT6 and the first end of the tenth resistor R10, second end of the 9th resistor R9 is respectively with
The colelctor electrode of the emitter stage, the base stage of the 8th transistor VT8 and the 9th transistor VT9 of five transistor VT5 connects, the tenth resistor
Second end of R10 respectively with the emitter stage of the 6th transistor VT6, the base stage of the 9th transistor VT9, the tenth transistor VT10 base
The colelctor electrode of pole and the tenth transistor VT10 connects, the base stage of the 4th transistor VT4 respectively with the first end of the 5th resistor R5,
First end connection, second end of the 6th resistor R6 and the 3rd electric capacity of the first end of the second capacitor C2 and the 6th resistor R6
The first end of device C3 connects, the second end the second end, the 7th resistor R7 with the second capacitor C2 respectively of the 5th resistor R5
The first end of first end, the first end of voltage Table V and the 8th resistor R8 connect, second end of the 7th resistor R7 respectively with
The colelctor electrode connection of the base stage of the 7th transistor VT7 and the 8th transistor VT8, the emitter stage of the 7th transistor VT7 and the second crystalline substance
The colelctor electrode of body pipe VT2 connects, emitter stage emitter stage, the 8th crystalline substance with the tenth transistor VT10 respectively of the 9th transistor VT9
The cathode output end of the emitter stage, the colelctor electrode of the 7th transistor VT7 and dc source of body pipe VT8 connects, first resistor device R1
The second end, second end of the 4th resistor R4, second end of the 3rd capacitor C3, the second end of voltage Table V and the 8th resistance
Second end of device R8 is all connected with the cathode output end of dc source.
Claims (1)
1. a kind of power amplifier based on monolithic integrated optical circuit it is characterised in that：Including dc source, ammeter, voltmeter,
The first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the 7th transistor,
8th transistor, the 9th transistor, the tenth transistor, diode, the first capacitor, the second capacitor, the 3rd capacitor, first
Resistor, second resistance device, 3rd resistor device, the 4th resistor, the 5th resistor, the 6th resistor, the 7th resistor, the 8th
Resistor, the 9th resistor and the tenth resistor, the cathode output end of described dc source respectively with described 3rd resistor device
The first end of first end, the positive pole of described diode and described second resistance device connects, the second end of described 3rd resistor device with
The emitter stage of described transistor seconds connects, and the second end of described second resistance device is connected with the emitter stage of described the first transistor
Connect, base stage negative pole, the first end of described 4th resistor and described with described diode respectively of described the first transistor
The base stage of two-transistor connects, the colelctor electrode of described the first transistor respectively with the emitter stage of described third transistor, described the
The emitter stage of four transistors, the colelctor electrode of described 5th transistor, the colelctor electrode of described 6th transistor connect, and the described 3rd is brilliant
The base stage of body pipe is connected with the first end of described first capacitor and the first end of described first resistor device respectively, described first electricity
It is connected with the cathode output end of described dc source after the second described ammeter of end series connection of container, the collection of described third transistor
Electrode is connected with the base stage of described 5th transistor and the first end of described 9th resistor respectively, the collection of described 4th transistor
Electrode is connected with the base stage of described 6th transistor and the first end of described tenth resistor respectively, and the of described 9th resistor
The two ends colelctor electrode with the emitter stage, the base stage of described 8th transistor and described 9th transistor of described 5th transistor respectively
Connect, the second end of described tenth resistor respectively with the emitter stage of described 6th transistor, the base stage of described 9th transistor,
The colelctor electrode of the base stage of described tenth transistor and described tenth transistor connects, the base stage of described 4th transistor respectively with institute
The first end stating the first end, the first end of described second capacitor and described 6th resistor of the 5th resistor connects, described
Second end of the 6th resistor is connected with the first end of described 3rd capacitor, the second end of described 5th resistor respectively with institute
State the second end, the first end of described 7th resistor, the first end of described voltmeter and described 8th resistance of the second capacitor
The first end of device connects, the second end base stage and described 8th crystal with described 7th transistor respectively of described 7th resistor
The colelctor electrode of pipe connects, and the emitter stage of described 7th transistor is connected with the colelctor electrode of described transistor seconds, and the described 9th is brilliant
The emitter stage of body pipe respectively with the emitter stage of described tenth transistor, the emitter stage of described 8th transistor, described 7th crystal
The cathode output end of the colelctor electrode of pipe and described dc source connects, the second end of described first resistor device, described 4th resistance
Second end of device, second end at described second end of the 3rd capacitor, the second end of described voltmeter and described 8th resistor
All it is connected with the cathode output end of described dc source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310086540.1A CN104065351B (en) | 2013-03-18 | 2013-03-18 | Power amplifier based on monolithic integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310086540.1A CN104065351B (en) | 2013-03-18 | 2013-03-18 | Power amplifier based on monolithic integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104065351A CN104065351A (en) | 2014-09-24 |
| CN104065351B true CN104065351B (en) | 2017-02-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310086540.1A Expired - Fee Related CN104065351B (en) | 2013-03-18 | 2013-03-18 | Power amplifier based on monolithic integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104065351B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112204844B (en) * | 2020-07-15 | 2023-12-19 | 英诺赛科（珠海）科技有限公司 | Electronic circuit and semiconductor device having the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1954488A (en) * | 2005-02-28 | 2007-04-25 | 英飞凌科技股份公司 | Monolithically integrated power amplifier device |
| CN203166840U (en) * | 2013-03-18 | 2013-08-28 | 成都中远信电子科技有限公司 | Power amplifier based on monolithic integrated circuit |
-
2013
- 2013-03-18 CN CN201310086540.1A patent/CN104065351B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1954488A (en) * | 2005-02-28 | 2007-04-25 | 英飞凌科技股份公司 | Monolithically integrated power amplifier device |
| CN203166840U (en) * | 2013-03-18 | 2013-08-28 | 成都中远信电子科技有限公司 | Power amplifier based on monolithic integrated circuit |
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| Publication number | Publication date |
|---|---|
| CN104065351A (en) | 2014-09-24 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Song Shengjun Inventor before: Fan Yong |
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| COR | Change of bibliographic data | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170119 Address after: Class 1 the first middle school of Shandong province 271199 Laiwu high tech Zone Wenshui Street No. 29 Shandong city in Laiwu province 56 Level 3 Department Applicant after: Song Shengjun Address before: The middle Tianfu Avenue in Chengdu city Sichuan province 610000 No. 1388 1 2 storey building No. 264 Applicant before: Chengdu Zhongyuanxin Electronic Technology Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 Termination date: 20180318 |