CN104064632A - Preparation method for insulating layers of light emitting diodes - Google Patents
Preparation method for insulating layers of light emitting diodes Download PDFInfo
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- CN104064632A CN104064632A CN201310095938.1A CN201310095938A CN104064632A CN 104064632 A CN104064632 A CN 104064632A CN 201310095938 A CN201310095938 A CN 201310095938A CN 104064632 A CN104064632 A CN 104064632A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 45
- 239000011810 insulating material Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 41
- 238000009616 inductively coupled plasma Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000003763 carbonization Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910005540 GaP Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 206010034960 Photophobia Diseases 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 208000013469 light sensitivity Diseases 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000027950 fever generation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- -1 nitride gallium nitride Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention provides a preparation method for insulating layers of light emitting diodes. The preparation method comprises the steps of: 1, forming a lighting epitaxial structure comprising an N-type layer, a quantum well layer and a P-type layer on the front of a transparent substrate; 2, forming a V-shaped groove penetrating to a preset depth of the transparent substrate; 3. 3, forming a N-type layer platform by photoetching and etching processes; 4, forming metal layer structure covering the V-shaped groove and the N-type layer platform; 5, filling photosensitive insulating material in the V-shaped groove; 6, exposing and developing from the back of the transparent substrate, and removing the photosensitive insulating material which has not been covered by the metal layer structure; 7, enabling the photosensitive insulating material on the metal layer structure to return and performing high-temperature carbonization treatment on the same to form an insulating layer. The invention provides the novel groove-type electrode structure, and provides the method for effectively preparing the insulating layer; the preparation method is simple in step, beneficial to saving cost, and capable of effectively improving performance of the light emitting diode.
Description
Technical field
The present invention relates to a kind of preparation method of light-emitting diode, particularly relate to a kind of preparation method of light-emitting diode insulating barrier.
Background technology
Semiconductor lighting is as new and effective solid light source, there is the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, mankind's leap again after incandescent lamp, fluorescent lamp in history of throwing light on will be become, its application expands rapidly, just driving the upgrading of the industries such as traditional lighting, demonstration, its economic benefit and social benefit are huge.Just because of this, semiconductor lighting is generally regarded as one of new industry that 21 century is most with prospects, is also one of most important commanding elevation of the optoelectronic areas coming years.Light-emitting diode is by three four compounds, as GaAs(GaAs), GaP(gallium phosphide), GaAsP(gallium arsenide phosphide) etc. semiconductor make, its core is PN junction.Therefore it has the I-N characteristic of general P-N knot, i.e. forward conduction, oppositely cut-off, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects P district by N district, and N district is injected by P district in hole.How sub minority carrier (few son) part that enters the other side region is compound and luminous with majority carrier ().
Along with day by day closing on of LED lantern fair field outburst, the research and development competition of LED encapsulation technology is also very fierce.At present GaN base LED encapsulation mainly contains three kinds of positive assembling structure, inverted structure and vertical stratifications.Current comparatively ripe be III group-III nitride gallium nitride by sapphire material as substrate, due to the insulating properties of Sapphire Substrate, so common GaN base LED adopts positive assembling structure.The light that send positive assembling structure active area is via P XingGaN district and transparency electrode outgoing.This is simple in structure, and manufacture craft is relatively ripe.Yet positive assembling structure LED has two obvious shortcomings, first positive assembling structure LED p, n electrode are in the same side of LED, and electric current must be crossed n-GaN layer by cross-current, causes current crowding, and local pyrexia amount is high, has limited drive current; Secondly, due to the poor thermal conductivity of Sapphire Substrate, serious obstruction scattering and disappearing of heat.
In order to solve heat dissipation problem, flip-chip (Flipchip) technology has been invented by U.S. Lumileds Lighting company.First this method prepares the large scale LED chip with applicable eutectic welding, prepares the silicon base plate of corresponding size simultaneously, and makes the golden conductive layer of eutectic welding electrode thereon and draw conductive layer (ultrasonic wave gold ball bonding point).Then, utilize eutectic welding equipment that large scale LED chip and silicon base plate is welded together.To assembling structure, on radiating effect, there is very large improvement.But existing inverted structure is normally fixed in silicon substrate by the method for welding, thereby such way tends to introduce the radiating efficiency that more thermal resistance reduces LED chip.And, the LED chip of structure in this, P electrode and N electrode are prepared in the same side of LED chip conventionally, tend to increase the difficulty of back bonding technique and lead-in wire technique, and the more difficult manufacture that realizes wafer scale, easily causes the reduction of product yield.
The invention provides a kind of groove-shaped light-emitting diode electrode structure, can make P electrode and N electrode fabrication in the both sides of light-emitting diode, and a kind of method that can effectively adopt light sensitivity insulating material to insulate to this electrode structure is provided.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of light-emitting diode insulating barrier, for solving variety of problems of the prior art.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of light-emitting diode insulating barrier, described preparation method at least comprises the following steps:
1) provide a transparency carrier, in the positive epitaxial light emission structure that at least comprises N-type layer, quantum well layer and P type layer that forms of described transparency carrier;
2) in described epitaxial light emission structure and described transparency carrier, form the V-type groove that is through to described transparency carrier one predetermined depth;
3) described in etching, the N-type layer of the P type layer of V-type groove both sides, quantum well layer and part forms N-type layer platform;
4) form the metal-layer structure that is covered in described V-type groove and N-type layer platform surface;
5) in described V-type groove, fill photosensitive insulating material;
6) from the back side of described transparency carrier, said structure is exposed and developing process, remove the photosensitive insulating material of not blocked by described metal-layer structure, and retain the photosensitive insulating material on metal-layer structure surface;
7) photosensitive insulating material on metal-layer structure surface is refluxed and high temperature cabonization is processed, to complete the preparation of insulating barrier.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, described transparency carrier is Sapphire Substrate, and described N-type layer is N-GaN layer, and described quantum well layer is GaN/InGaN multiple quantum well layer, and described P type layer is P-GaN layer.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, step 2) adopt inductively coupled plasma ICP lithographic technique to etch described V-type groove.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, step 2) adopt inductively coupled plasma ICP etching method to etch described V-type groove.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, step 2) adopt laser udp hole punching to get described V-type groove.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, step 4) adopts sputtering method or galvanoplastic to form described metal-layer structure.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, described metal-layer structure is two or more the alloy in Cr, Ti, Al, Ti, Au.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, described photosensitive insulating material is positive photoresist.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, step 5) adopts spin-coating method to fill photosensitive insulating material in described V-type groove.
As a kind of preferred version of the preparation method of light-emitting diode insulating barrier of the present invention, described spin-coating method comprises the following steps: a) in said structure surface-coated photosensitive insulating material; B) rotation makes described photosensitive insulating material fill up described V-type groove completely at a slow speed; C) fast rotational is evenly distributed described photosensitive insulating material.
As mentioned above, the invention provides a kind of preparation method of light-emitting diode insulating barrier, comprising: 1) provide a transparency carrier, in the positive epitaxial light emission structure that at least comprises N-type layer, quantum well layer and P type layer that forms of described transparency carrier; 2) in described epitaxial light emission structure and described transparency carrier, form the V-type groove that is through to described transparency carrier one predetermined depth; 3) described in etching, the N-type layer of the P type layer of V-type groove both sides, quantum well layer and part forms N-type layer platform; 4) form the metal-layer structure that is covered in described V-type groove and N-type layer platform surface; 5) in described V-type groove, fill photosensitive insulating material; 6) from the back side of described transparency carrier, said structure is exposed and developing process, remove the photosensitive insulating material of not blocked by described metal-layer structure, and retain the photosensitive insulating material on metal-layer structure surface; 7) photosensitive insulating material on metal-layer structure surface is refluxed and high temperature cabonization is processed, to complete the preparation of insulating barrier.The invention provides a kind of novel groove-shaped electrode structure, and a kind of effective method of preparing light sensitivity insulating barrier is provided, step is simple, is conducive to save cost, and improves the performance of light-emitting diode.
Accompanying drawing explanation
Fig. 1～2 are shown as the structural representation that preparation method's step 1) of light-emitting diode insulating barrier of the present invention presents.
Fig. 3 is shown as preparation method's step 2 of light-emitting diode insulating barrier of the present invention) structural representation that presents.
Fig. 4 is shown as the structural representation that preparation method's step 3) of light-emitting diode insulating barrier of the present invention presents.
Fig. 5 is shown as the structural representation that preparation method's step 4) of light-emitting diode insulating barrier of the present invention presents.
Fig. 6 is shown as the structural representation that preparation method's step 5) of light-emitting diode insulating barrier of the present invention presents.
Fig. 7～Fig. 8 is shown as the structural representation that preparation method's step 6) of light-emitting diode insulating barrier of the present invention presents.
Element numbers explanation
101 transparency carriers
102 N-type layers
103 quantum well layers
104 P type layers
105 V-type grooves
106 N-type layer platform
107 metal-layer structures
108 photosensitive insulating material
109 insulating barriers
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 1～Fig. 8.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Fig. 1～Fig. 8, the present embodiment provides a kind of preparation method of light-emitting diode insulating barrier, and described preparation method at least comprises the following steps:
As shown in Fig. 1～Fig. 2, first carry out step 1), provide a transparency carrier 101, in the positive epitaxial light emission structure that at least comprises N-type layer 102, quantum well layer 103 and P type layer 104 that forms of described transparency carrier 101.
As example, described transparency carrier 101 is Sapphire Substrate, can be Sapphire Substrate or the graphical sapphire substrate of flat sheet type.Certainly, can be also the transparency carriers 101 such as Si substrate, SiC substrate.
As example, adopt chemical vapour deposition technique to form described epitaxial light emission structure.
As example, described N-type layer 102 is N-GaN layer, and described quantum well layer 103 is GaN/InGaN multiple quantum well layer 103, and described P type layer 104 is P-GaN layer.Certainly, described epitaxial light emission structure can be also as GaAs(GaAs) base, GaP(gallium phosphide) base, GaAsP(gallium arsenide phosphide) epitaxial light emission structure such as base.
As shown in Figure 3, then carry out step 2), in described epitaxial light emission structure and described transparency carrier 101, form the V-type groove 105 that is through to described transparency carrier 101 1 predetermined depth.
As example, first in described epitaxial light emission structure surface, make photo etched mask, then adopt inductively coupled plasma ICP etching method to etch described V-type groove 105, finally remove described photo etched mask.
As example, adopt inductively coupled plasma ICP lithographic technique to etch described V-type groove.
As example, adopt laser udp hole punching to get described V-type groove.
Preferably, described predetermined depth is 1/4～1/2 of described transparency carrier 101 thickness.
As shown in Figure 4, then carry out step 3), the N-type layer 102 of the P type layer 104 of V-type groove 105 both sides, quantum well layer 103 and part forms N-type layer platform 106 described in etching.
As example, adopt the N-type layer 102 of P type layer 104 described in ICP etching method etching, quantum well layer 103 and part, to be formed for preparing the N-type layer platform 106 of N electrode in V-type groove 105 both sides.
As shown in Figure 5, then carry out step 4), form the metal-layer structure 107 that is covered in described V-type groove 105 and N-type layer platform 106 surfaces.
As example, adopt sputtering method or galvanoplastic to form described metal-layer structure 107.In the present embodiment, adopt galvanoplastic to form described metal-layer structure 107.
As example, described metal-layer structure 107 is two or more the alloy in Cr, Ti, Al, Ti, Au.Certainly, described metal-layer structure 107 can be also as other metal materials such as W, Ag.It should be noted that, this metal material should have good barrier effect to ultraviolet ray, so that follow-up technique is carried out.
As shown in Figure 6, then carry out step 5), in the interior filling photosensitive insulating material 108 of described V-type groove 105.
As example, described photosensitive insulating material 108 is positive photoresist.
As example, adopt spin-coating method in the interior filling photosensitive insulating material 108 of described V-type groove 105.
As example, because described V-type groove 105 degree of depth are larger, and bottom is narrower, adopt common spin coating proceeding to be difficult to be filled to described V-type groove 105 bottoms, therefore, the invention provides a kind of spin coating method of photosensitive insulating material 108, first, select rarer photoresist or photoresist is adjusted to rarer state and carry out spin coating again, described spin-coating method comprises the following steps: a) in said structure surface-coated photosensitive insulating material 108; B) rotation makes described photosensitive insulating material 108 fill up described V-type groove 105 completely at a slow speed; C) fast rotational is evenly distributed described photosensitive insulating material 108.Adopt this method can effectively photosensitive insulating material 108 be filled up to described V-type groove 105, improve the performance of light-emitting diode.And, photosensitive insulating material 108 is compared as silicon dioxide or silicon nitride etc. with other insulating material, it is very simple that it removes technique, lithography mask version etc. need to do not made, and photosensitive insulating material 108 can not cause any damage to epitaxial light emission structure while removing substantially, and there is very good insulation effect.
As shown in Fig. 7～Fig. 8, then carry out step 6), from the back side of described transparency carrier 101, said structure exposed and develop, removing the photosensitive insulating material 108 of not blocked by described metal-layer structure 107, and retaining the photosensitive insulating material 108 on metal-layer structure 107 surfaces.
As example, adopt the ultraviolet ray of vertical incidence to expose, after developing, just can remove simply the photosensitive insulating material 108 of not blocked by described metal-layer structure 107, and retain the photosensitive insulating material 108 on metal-layer structure 107 surfaces.
Finally carry out step 7), the photosensitive insulating material 108 on metal-layer structure 107 surfaces is refluxed and high temperature cabonization processing, to complete the preparation of insulating barrier 109.
Photosensitive insulating material 108 after backflow and high temperature cabonization processing has good insulation effect and good mechanical strength, can improve the performance of final light-emitting diode.
In follow-up technical process, can the metal-layer structure in described V-type groove be exposed by the attenuate of transparency carrier, just can realize the electrode structure that P electrode and N electrode are positioned at light-emitting diode both sides.
In sum, the invention provides a kind of preparation method of light-emitting diode insulating barrier, comprising: 1) provide a transparency carrier, in the positive epitaxial light emission structure that at least comprises N-type layer, quantum well layer and P type layer that forms of described transparency carrier; 2) in described epitaxial light emission structure and described transparency carrier, form the V-type groove that is through to described transparency carrier one predetermined depth; 3) described in etching, the N-type layer of the P type layer of V-type groove both sides, quantum well layer and part forms N-type layer platform; 4) form the metal-layer structure that is covered in described V-type groove and N-type layer platform surface; 5) in described V-type groove, fill photosensitive insulating material; 6) from the back side of described transparency carrier, said structure is exposed and developing process, remove the photosensitive insulating material of not blocked by described metal-layer structure, and retain the photosensitive insulating material on metal-layer structure surface; 7) photosensitive insulating material on metal-layer structure surface is refluxed and high temperature cabonization is processed, to complete the preparation of insulating barrier.The invention provides a kind of novel groove-shaped electrode structure, and a kind of effective method of preparing light sensitivity insulating barrier is provided, step is simple, is conducive to save cost, and improves the performance of light-emitting diode.So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (10)
1. a preparation method for light-emitting diode insulating barrier, is characterized in that, described preparation method at least comprises the following steps:
1) provide a transparency carrier, in the positive epitaxial light emission structure that at least comprises N-type layer, quantum well layer and P type layer that forms of described transparency carrier;
2) in described epitaxial light emission structure and described transparency carrier, form the V-type groove that is through to described transparency carrier one predetermined depth;
3) described in etching, the N-type layer of the P type layer of V-type groove both sides, quantum well layer and part forms N-type layer platform;
4) form the metal-layer structure that is covered in described V-type groove and N-type layer platform surface;
5) in described V-type groove, fill photosensitive insulating material;
6) from the back side of described transparency carrier, said structure is exposed and developing process, remove the photosensitive insulating material of not blocked by described metal-layer structure, and retain the photosensitive insulating material on metal-layer structure surface;
7) photosensitive insulating material on metal-layer structure surface is refluxed and high temperature cabonization is processed, to complete the preparation of insulating barrier.
2. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: described transparency carrier is Sapphire Substrate, and described N-type layer is N-GaN layer, and described quantum well layer is GaN/InGaN multiple quantum well layer, and described P type layer is P-GaN layer.
3. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: step 2) adopt laserscribing to mark described V-type groove.
4. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: step 2) adopt inductively coupled plasma ICP lithographic technique to etch described V-type groove.
5. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: step 2) adopt laser udp hole punching to get described V-type groove.
6. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: step 4) adopts sputtering method or galvanoplastic to form described metal-layer structure.
7. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: described metal-layer structure is two or more the alloy in Cr, Ti, Al, Ti, Au.
8. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: described photosensitive insulating material is positive photoresist.
9. the preparation method of light-emitting diode insulating barrier according to claim 1, is characterized in that: step 5) adopts spin-coating method to fill photosensitive insulating material in described V-type groove.
10. the preparation method of light-emitting diode insulating barrier according to claim 9, is characterized in that: described spin-coating method comprises the following steps: a) in said structure surface-coated photosensitive insulating material; B) rotation makes described photosensitive insulating material fill up described V-type groove completely at a slow speed; C) fast rotational is evenly distributed described photosensitive insulating material.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111106221A (en) * | 2018-10-28 | 2020-05-05 | 广东众元半导体科技有限公司 | Wafer-level deep ultraviolet LED packaging mode |
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| CN102460742A (en) * | 2009-06-04 | 2012-05-16 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor body and optoelectronic semiconductor chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106221A (en) * | 2018-10-28 | 2020-05-05 | 广东众元半导体科技有限公司 | Wafer-level deep ultraviolet LED packaging mode |
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