CN104064518A - Scribing method and scribing device - Google Patents
Scribing method and scribing device Download PDFInfo
- Publication number
- CN104064518A CN104064518A CN201310662885.7A CN201310662885A CN104064518A CN 104064518 A CN104064518 A CN 104064518A CN 201310662885 A CN201310662885 A CN 201310662885A CN 104064518 A CN104064518 A CN 104064518A
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- Prior art keywords
- cutter
- scribe wheel
- angle
- delineation
- toe angle
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims description 16
- 241000220317 Rosa Species 0.000 claims description 15
- 230000001154 acute effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 22
- 229910010271 silicon carbide Inorganic materials 0.000 description 22
- 230000000694 effects Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
The invention relates to a scribing method and a scribing device capable of preventing horizontal cracks according to a declination angle during manufacturing during the scribing of SiC wafers. When a SiC substrate with the declination angle is scribed vertical to an orientation surface and vertical to a crystallographic axis of the SiC substrate, a scribing wheel with a knife front end angle different relative to the left and right of a knife front end ridge, large knife front end angle positioned at a high position from the perspective of the crystallographic axis, and small angle at the other side is employed to scribe. Therefore, the horizontal cracks can be reduced.
Description
Technical field
The present invention relates to a kind of rose method and scoring device of delineating for disjunction silicon carbide substrate (SiC substrate).
Background technology
Glass substrate is delineated, the situation of disjunction, be to carry out scribe wheel apply load and rotate and delineate.Disclose and have at this moment at patent documentation 1,2, delineate scored groove by the cutter toe angle left and right that makes scribe wheel is different in the mode tilting a little from glass surface.
Because SiC substrate is semiconductor excellent in chemical stability, therefore as the material of electronic component, for example can be used in light-emitting diode, Schottky diode (Schottky diode), MOSFET etc., also can be used as in addition semi-conductive substrate.In the situation using as semiconductor, similarly generate columned ingot casting (ingot) with general element silicon, be sliced into the wafer of circular plate type.Then, after being formed with multiple functional areas on wafer, being clathrate and delineating, disjunction and using as semiconductor substrate.
In addition, the lamination pattern of SiC substrate is crystallization multiform (polymorphism) semiconducting crystal that is easy to various variation, and in order to generate crystalline substance of heap of stone (epitaxial) film that is suitable for semi-conductive 4H-SiC, and develop the method that generates epitaxial of heap of stone on the substrate that has to tilt several times with respect to crystal axis at SiC (0001) face that makes Si atom be positioned at most surface.This inclination is several times called to drift angle (angle off), by the crystal plane that forms minutely rank (step) shape with drift angle at high-order crystal plane.(following in order to represent that corresponding to the direction of the jump of this drift angle the mode of the crystallization direction can identify wafer forms so-called directional plane (orientation flat), be called for short directed face) breach to serve as a mark, this directed face is at right angles to excise linearly one end of plectane with the direction tilting.Except this breach, also there is the situation that forms recess (notch) at plectane.
Patent documentation 1: No. 2785906 communique of Japanese Patent
Patent documentation 2: No. 2973354 communique of Japanese Patent
Summary of the invention
In addition,, in the situation that the wafer of SiC substrate is to clathrate carries out disjunction, once similarly use with the delineation of glass plate, the scribe wheel that the cutter toe angle of left and right is identical is delineated, disjunction, has the not good situation of crystalline quality.When inventor is in the time delineating with respect to crystal axis direction parallel direction, carry out brisement along this delineation line, though horizontal slight crack does not produce, end face quality is also good, but in the situation of vertically having carried out delineation with respect to crystallization direction, find to have horizontal slight crack and resulted from the tendency of a side of delineation line.And, even the substrate that has only produced horizontal slight crack in a side is carried out to brisement, be also difficult to obtain good end face quality.
Thus and thus carried out the situation of delineation in the scribe wheel that uses existing known cutter toe angle symmetry, have following problem points: the vertical direction entirety of the SiC substrate surface contacting due to tool setting front end applies load, therefore have the easily tendency at the horizontal slight crack of one-sided generation.
The present invention completes in order to solve above-mentioned existing known problem points, its object is to provide a kind of new rose method and scoring device, technical problem to be solved is can be in the time that SiC substrate is delineated, and the cutter front end that usage level slight crack is difficult to produce is delineated.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of rose method proposing according to the present invention, it is the rose method that SiC substrate is delineated, in the time that the vertical direction of the crystal axis with respect to SiC substrate is delineated, use with respect to the cutter toe angle difference of cutter front end crest line left and right and from crystal axis and observe the cutter toe angle scribe wheel large, that the opposing party's angle is less that is positioned at higher position is delineated; In the time delineating along crystal axis, use the identical scribe wheel of cutter toe angle of left and right to delineate SiC substrate.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid rose method, wherein this scribe wheel, also can be on circumference and soaks into cutter front end with the height of set interval formation breach.
Aforesaid rose method, wherein the breach on the circumference of this scribe wheel, also can be the Notch angle of the acute side of cutter front end is set as larger.
The object of the invention to solve the technical problems also realizes by the following technical solutions.A kind of scoring device proposing according to the present invention, be to intersect the scoring device of delineation for the SiC substrate to being formed with drift angle, it possesses: the engraving head of the scribe wheel identical with respect to the cutter toe angle of about cutter front end crest line is installed and the engraving head of the scribe wheel that the cutter toe angle of left and right of cutter front end is different is installed.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid scoring device, can be used in the rose method of the invention described above.
In addition, be called intersection delineation by delineate (forming delineation line) in the mode that (being generally in the vertical direction) intersects mutually on the same surface of same substrate.Generally speaking, scoring device, possesses: the engraving head, mounting of scribe wheel is installed or keeps the substrate of substrate to keep means and make engraving head with mounting or be held in the means that relatively move that the substrate of substrate maintenance means is relatively moving with respect to substrate surface parallel direction at front end; Engraving head has the scribe wheel that is installed on its front end loading or be held in the function that substrate keeps the substrate surface of means to press, under the state scribe wheel being pressed on to substrate surface, engraving head and substrate are relatively moved, and can delineate substrate.
The present invention compared with prior art has obvious advantage and beneficial effect.By technique scheme, rose method of the present invention and scoring device at least have following advantages and beneficial effect: though the present invention to the SiC substrate that is formed with drift angle the situation vertically to delineate with respect to crystallization direction, also can avoid the generation of horizontal slight crack, and end face precision can make brisement time improves.
In sum, the invention relates to a kind of rose method and scoring device, is that the drift angle when manufacturing prevents the generation of horizontal slight crack in the time that SiC wafer is delineated.Its solution is: at the SiC substrate to having drift angle, when vertically delineating with directed face, in the time that the vertical direction of the crystal axis with respect to SiC substrate is delineated, use with respect to the cutter toe angle difference of cutter front end crest line left and right and from crystal axis and observe the scribe wheel large, that the opposing party's angle is less of the cutter toe angle in higher position is delineated.Can make whereby the generation of horizontal slight crack tail off.The present invention has significant progress technically, has obvious good effect, is really a new and innovative, progressive, practical new design.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, and for above and other object of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Brief description of the drawings
Fig. 1 is the figure that represents the normal of wafer and the relation of crystal axis.
Fig. 2 is the front view that becomes the wafer of delineation object.
Fig. 3 A is the end view that represents wafer and general scribe wheel.
Fig. 3 B is the end view that represents the wafer scribe wheel different from cutter toe angle.
Fig. 4 A is the front view that uses general scribe wheel to carry out delineation with delineation load 0.06MPa.
Fig. 4 B is the front view that uses general scribe wheel to carry out delineation with delineation load 0.08MPa.
Fig. 4 C is the front view that uses general scribe wheel to carry out delineation with delineation load 0.1MPa.
Fig. 4 D is the front view that uses general scribe wheel to carry out delineation with delineation load 0.12MPa.
Fig. 5 A is the front view that uses the different scribe wheel of cutter toe angle of left and right to delineate with delineation load 0.06MPa.
Fig. 5 B is the front view that uses the different scribe wheel of cutter toe angle of left and right to carry out delineation with delineation load 0.08MPa.
Fig. 5 C is the front view that uses the different scribe wheel of cutter toe angle of left and right to carry out delineation with delineation load 0.1MPa.
Fig. 5 D is the front view that uses the different scribe wheel of cutter toe angle of left and right to carry out delineation with delineation load 0.12MPa.
Fig. 6 is the front view that represents the cutter fore-end of the scribe wheel of the 2nd example of the present invention.
Fig. 7 is the front view that represents the cutter fore-end of the scribe wheel of the 3rd example of the present invention.
[symbol description]
10:(0001) face
11: wafer
12: directed face
20,21,22,24: scribe wheel
α, β: cutter toe angle
Embodiment
Technological means and effect of taking for reaching predetermined goal of the invention for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to rose method and its embodiment of scoring device, method, step, structure, feature and effect thereof of proposing according to the present invention, be described in detail as follows.
Fig. 1 tilts with respect to (0001) face while being illustrated in the manufacture of SiC wafer and the normal of wafer that forms and the figure of the relation of crystal axis a little.In Fig. 1, in the face of (0001) face 10, definition crystal axis is x axle and vertical y axle therewith, and sets its normal for 10a.And, in the time setting the normal of wafer 11 for 11a, normal 10a, 11a angulation, be also that the inclination angle of wafer is bias angle theta, for example set 4 ° for.Fig. 2 is the front view of wafer 11.Be pre-formed the directional plane of a jiao (following, to claim directed face) 12 of excision circumference in the direction parallel with this angle for wafer 11.
In addition, as shown in Figure 3A, be general scribe wheel 20 with respect to the parallel line 13a of directed face 12 or when parallel direction has been carried out delineation therewith using cutter toe angle symmetrical, as above horizontal slight crack produces hardly.
On the other hand, as shown in Figure 3A, using cutter toe angle, symmetrical to be general scribe wheel 20 be formed with the situation of delineation line in the direction that is straight line 13b with directed face 12, produces horizontal slight crack.In the figure, the higher direction of the wafer shown in the left side corresponding diagram 1 of SiC wafer 11.
Then, describe for the concrete example of having delineated.Following disclose use the general scribe wheel 20 shown in Fig. 3 A with delineation speed 100mm/s, in respect to directed face 12 vertical direction-internal-cutting way carried out the example of delineation.Fig. 4 A uses this scribe wheel and becomes situation, Fig. 4 B of 0.06MPa to use this scribe wheel and become situation, Fig. 4 C of 0.08MPa to use this scribe wheel and become situation, Fig. 4 D of 0.1MPa to use this scribe wheel and delineation load set is become to the situation of 0.12MPa delineation load set delineation load set delineation load set, and the figure observing from above while having carried out delineation.As shown in Fig. 4 A～Fig. 4 C, produce many horizontal slight cracks in the left side of delineation line, and in Fig. 4 D, produce horizontal slight crack in both sides.
Therefore, in this example, in the time vertically delineating with respect to directed face 12, as the end view disclosing at Fig. 3 B, use the scribe wheel 21 of the cutter toe angle α cutter front end different from the cutter toe angle β on right side with left side to delineate to SiC substrate.The cutter toe angle α that uses the left side of this scribe wheel 21 is for example that 75 °, the cutter toe angle β on right side are for example 70 °, the different scribe wheel of cutter toe angle of left and right.Cutter toe angle is not limited to those value, and the cutter toe angle α of obtuse angle side for example sets the scope of 70～85 ° for, and the cutter toe angle β of acute side for example sets 65～80 ° for.In addition, the angle of cutter front end entirety is below 150 °, and differential seat angle is for example set 5 ° for.And, as shown in Figure 3 B, if the cutter toe angle β that the cutter toe angle α that uses the point that joins compared with the summit of scribe wheel to observe from x axle the left side that is positioned at higher position for left side is set as is large, observe from x axle the right side that is positioned at lower position is set as less scribe wheel and delineates, because the cutter front load in obtuse angle side reduces, therefore can avoid the generation of horizontal slight crack.And the progress direction of slight crack is producing slight crack with respect to substrate from the vertical direction tilting a little, and make can be along this line brisement.
Fig. 5 A uses the scribe wheel 21 shown in Fig. 3 B and becomes situation, Fig. 5 B of 0.06MPa to use this scribe wheel 21 and become situation, Fig. 5 C of 0.08MPa to use this scribe wheel 21 and become situation, Fig. 5 D of 0.1MPa to use this scribe wheel 21 and delineation load set is become to the situation of 0.12MPa and the figure observing from above while having carried out delineation delineation load set delineation load set delineation load set.Once comparison diagram 5A, Fig. 5 B and Fig. 4 A, Fig. 4 B, in the time using the scribe wheel 21 shown in Fig. 3 B to carry out delineation, the horizontal slight crack in the left side of delineation line is less, even and the horizontal slight crack producing in Fig. 5 C, Fig. 5 D also become less.Thus and thus, use to delineate to cutter toe angle being set for to the selected scribe wheel of less mode at the lower one tilting, can make whereby the generation of horizontal slight crack tail off.
Generally speaking, wafer 11 is clathrate to be delineated, and carries out disjunction and manufactures multiple wafers along its delineation line.Therefore, the situation of in fact delineating, as shown in Figure 2 A in delineation with respect to the parallel line 13a of the directed face 12 of wafer 11 or the situation of parallel line therewith, the general scribe wheel 20 that uses the cutter toe angle of left and right to equate as shown in Figure 3A, in the situation that forms the delineation line parallel with line 13b, use the scribe wheel 21 shown in Fig. 3 B, and delineate in the mode of the scribe wheel of switching those.Even also can make the generation of horizontal slight crack tail off in any direction accordingly.
Then, describe for the 2nd example of the present invention.In the 1st above-mentioned example, though use the different scribe wheel of cutter toe angle of left and right, as shown in No. 3074143rd, Japan Patent as, also can use the cutter front end on circumference to be formed with the scribe wheel of giving the projection of getting impact ready.Fig. 6 amplifies the part of scribe wheel 22 of this example and the enlarged drawing that represents.As shown in the drawing, be to make the cutter toe angle α of left and right different from β, and form equably breach 23 in the left and right of the crest line of scribe wheel 22 and become height and soak into type person.Can obtain accordingly the effect that can form high delineation of soaking into and can make the generation of the horizontal slight crack of side tail off further.
Then, describe for the 3rd example of the present invention.Fig. 7 amplifies the part of scribe wheel 24 of this example and the enlarged drawing that represents.As shown in the drawing, be to make the cutter toe angle α of left and right different from β, and make Notch angle become height compared with large until top formation cut channel for the acute side on the right side of the crest line of scribe wheel 24 to soak into type person.Also in this situation, can obtain the effect that can form high delineation of soaking into and can make the generation of the horizontal slight crack of side tail off further.
The present invention can be in the time that SiC substrate be carried out to disjunction the horizontal slight crack of minimizing produce, can to by SiC substrate is delineated, brisement and contribution is given in the semi-conductive manufacture of carrying out disjunction.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (5)
1. a rose method, is that SiC substrate is delineated, and it is characterized in that it comprises the following steps:
In the time that the vertical direction of the crystal axis with respect to SiC substrate is delineated, use with respect to the cutter toe angle difference of cutter front end crest line left and right and from crystal axis and observe the cutter toe angle scribe wheel large, that the opposing party's angle is less that is positioned at higher position is delineated;
In the time delineating along crystal axis, use the identical scribe wheel of cutter toe angle of left and right to delineate SiC substrate.
2. rose method according to claim 1, is characterized in that, wherein, this scribe wheel, is to soak into cutter front end with the height of set interval formation breach on circumference.
3. rose method according to claim 2, is characterized in that, wherein, the breach on the circumference of this scribe wheel, is that the Notch angle of the acute side of cutter front end is set as larger.
4. a scoring device, is to intersect delineation for the SiC substrate to being formed with drift angle, it is characterized in that, it possesses has:
The engraving head of the scribe wheel identical with respect to the cutter toe angle of cutter front end crest line left and right is installed, and
The engraving head of the scribe wheel that the cutter toe angle of left and right of cutter front end is different is installed.
5. scoring device according to claim 4, is characterized in that, it is used according to the rose method described in arbitrary claim in claims 1 to 3.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-055346 | 2013-03-18 | ||
| JP2013055346A JP6056575B2 (en) | 2013-03-18 | 2013-03-18 | Scribing method and scribing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104064518A true CN104064518A (en) | 2014-09-24 |
| CN104064518B CN104064518B (en) | 2019-03-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310662885.7A Expired - Fee Related CN104064518B (en) | 2013-03-18 | 2013-12-09 | Rose method and scoring device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6056575B2 (en) |
| KR (1) | KR102190861B1 (en) |
| CN (1) | CN104064518B (en) |
| TW (1) | TWI589538B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101725733B1 (en) | 2016-07-12 | 2017-04-11 | 엘지디스플레이 주식회사 | Apparatus for processing a substrate and display device by using the same |
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| JP2785906B2 (en) * | 1994-02-14 | 1998-08-13 | 日本板硝子株式会社 | Glass plate cutting method |
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| JP2973354B2 (en) | 1996-04-18 | 1999-11-08 | 日本板硝子株式会社 | Glass substrate for disk |
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| JP4710148B2 (en) * | 2001-02-23 | 2011-06-29 | パナソニック株式会社 | Manufacturing method of nitride semiconductor chip |
| JP2005093503A (en) * | 2003-09-12 | 2005-04-07 | Hitachi Cable Ltd | Dicing method |
| JP2005129741A (en) * | 2003-10-24 | 2005-05-19 | Tokyo Seimitsu Co Ltd | Dicing blade and dicing method |
| JP2006237375A (en) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | Method of dicing |
| JP4346598B2 (en) * | 2005-10-06 | 2009-10-21 | 株式会社東芝 | Compound semiconductor device and manufacturing method thereof |
| KR20100065632A (en) * | 2008-12-08 | 2010-06-17 | 세메스 주식회사 | A scrib wheel |
| JP5080551B2 (en) * | 2009-12-24 | 2012-11-21 | ラピスセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
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2013
- 2013-03-18 JP JP2013055346A patent/JP6056575B2/en not_active Expired - Fee Related
- 2013-12-02 TW TW102143954A patent/TWI589538B/en not_active IP Right Cessation
- 2013-12-09 CN CN201310662885.7A patent/CN104064518B/en not_active Expired - Fee Related
-
2014
- 2014-02-06 KR KR1020140013835A patent/KR102190861B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2785906B2 (en) * | 1994-02-14 | 1998-08-13 | 日本板硝子株式会社 | Glass plate cutting method |
| CN1150129A (en) * | 1995-11-06 | 1997-05-21 | 三星钻石工业株式会社 | Glass cutting disc |
| JPH09278474A (en) * | 1996-04-08 | 1997-10-28 | Nippon Sheet Glass Co Ltd | Glass wheel cutter and glass plate cutting method |
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| CN102310486A (en) * | 2010-07-08 | 2012-01-11 | 三星钻石工业股份有限公司 | Cutter wheel with groove |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI589538B (en) | 2017-07-01 |
| KR20140114285A (en) | 2014-09-26 |
| CN104064518B (en) | 2019-03-19 |
| JP2014183101A (en) | 2014-09-29 |
| TW201437162A (en) | 2014-10-01 |
| JP6056575B2 (en) | 2017-01-11 |
| KR102190861B1 (en) | 2020-12-14 |
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