CN104060321A - Single crystal furnace use quartz pin - Google Patents
Single crystal furnace use quartz pin Download PDFInfo
- Publication number
- CN104060321A CN104060321A CN201310447045.9A CN201310447045A CN104060321A CN 104060321 A CN104060321 A CN 104060321A CN 201310447045 A CN201310447045 A CN 201310447045A CN 104060321 A CN104060321 A CN 104060321A
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- CN
- China
- Prior art keywords
- single crystal
- contact part
- liquid level
- insertion section
- heat shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a single crystal furnace use quartz pin which comprises an inserting part, a contact part and a hook; one end of the inserting part is inserted into a groove at the bottom of a heat shield; one end of the contact part is connected with the other end of the inserting part, a non connecting end of the contact part extends downward out of the bottom of the heat shield; and the hook is arranged at the connection position of the inserting part and the contact part. The distance between the bottom end of the contact part and the bottom of the heat shield is 15 mm. At the end of material melting of a single crystal furnace, the molten silicon liquid level position can be judged and adjusted by the quartz pin by use of the relative distance between a crucible and the heat shield, and the quartz pin can play the role of controlling the molten silicon liquid level position in the single crystal silicon preparation process, and ensures the molten silicon liquid level position is same in each single crystal preparation process.
Description
Technical field
The present invention relates to a kind of position control, particularly a kind of quartz pins for single crystal growing furnace.
Background technology
Existing monocrystalline is produced in process, because of operator's difference and equipment error factor, affects material and finishes the rear position control to fusion silicon liquid level and have deviation.So, process variations while easily causing silicon single crystal to be produced, it is unstable that silicon single crystal is produced environment of living in, produces that to obtain silicon single crystal quality variant, and monocrystalline quality repeatability is not strong.
Summary of the invention
The object of the present invention is to provide a kind of such such environmental effects that reduces, ensure the strong quartz pins for single crystal growing furnace of monocrystalline quality repeatability.
For solving the problems of the technologies described above, the present invention, for the quartz pins of single crystal growing furnace, comprising: insertion section, and insert in the groove of heat shielding bottom one end of described insertion section; Contact part, one end of described contact part is connected with the other end of described insertion section, and the front of motor of described contact part leans out described heat shielding bottom downwards; Hook, described hook is arranged on the junction of described insertion section and described contact part.
The distance of the top of described contact part and described heat shielding bottom is 15 millimeters.
The present invention is used for the quartz pins of single crystal growing furnace after single crystal growing furnace material finishes, utilize crucible and heat shielding relative distance, use quartzy steady brace to judge, regulate the position of fusion silicon liquid level, can produce to play in process at silicon single crystal and control the effect of fusion silicon liquid level position, guarantee that each monocrystalline fusion silicon liquid level processed gets all at same position.
Brief description of the drawings
Fig. 1 is the quartz pins structural representation of the present invention for single crystal growing furnace;
Fig. 2 is that the present invention uses schematic diagram for the quartz pins of single crystal growing furnace.
The present invention is used for the quartz pins accompanying drawing description of reference numerals of single crystal growing furnace:
1-insertion section 2-heat shielding 3-groove
4-contact part 5-hook
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail for the quartz pins of single crystal growing furnace.
As shown in Figure 1 and Figure 2, the present invention, for the quartz pins of single crystal growing furnace, comprising: insertion section 1, and insert in the groove 3 of heat shielding 2 bottoms one end of insertion section 1; Contact part 4, one end of contact part 4 is connected with the other end of insertion section 1, is provided with hook 5 in insertion section 1 and the junction of contact part 4.Meanwhile, the front of motor of contact part 4 leans out heat shielding 2 bottoms downwards, and the distance of the top of front of motor and heat shielding 2 bottoms is 15 millimeters.
When work, the confirmation of quartz pins steady brace original state, the bottom of contact part 4 front of motors is apart from 15 millimeters of heat shielding 2 bottoms; Material finishes, and rising crucible to silicon liquid level touches quartz pins bottom; After quartz pins contact liquid level, bushing position declines 5 millimeters, is fixed on bushing position, starts crystal pulling process seeding, shouldering, isometrical, ending, and whole process is constant.
The present invention is used for the quartz pins of single crystal growing furnace after single crystal growing furnace material finishes, utilize crucible and heat shielding relative distance, use quartzy steady brace to judge, regulate the position of fusion silicon liquid level, can produce to play in process at silicon single crystal and control the effect of fusion silicon liquid level position, guarantee that each monocrystalline fusion silicon liquid level processed gets all at same position.
Below the preferred embodiment of the invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all modification being equal to or replacement under the prerequisite without prejudice to the invention spirit, and the modification that these are equal to or replacement are all included in the application's claim limited range.
Claims (2)
1. for the quartz pins of single crystal growing furnace, it is characterized in that, comprising:
Insertion section, insert in the groove of heat shielding bottom one end of described insertion section;
Contact part, one end of described contact part is connected with the other end of described insertion section, and the front of motor of described contact part leans out described heat shielding bottom downwards;
Hook, described hook is arranged on the junction of described insertion section and described contact part.
2. the quartz pins for single crystal growing furnace according to claim 1, is characterized in that, the distance of the bottom of described contact part and described heat shielding bottom is 15 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310447045.9A CN104060321A (en) | 2013-09-27 | 2013-09-27 | Single crystal furnace use quartz pin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310447045.9A CN104060321A (en) | 2013-09-27 | 2013-09-27 | Single crystal furnace use quartz pin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104060321A true CN104060321A (en) | 2014-09-24 |
Family
ID=51548245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310447045.9A Pending CN104060321A (en) | 2013-09-27 | 2013-09-27 | Single crystal furnace use quartz pin |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104060321A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947180A (en) * | 2015-07-06 | 2015-09-30 | 麦斯克电子材料有限公司 | Method for determining crystal leading crucible position of single crystal furnace |
| WO2020156213A1 (en) * | 2019-02-01 | 2020-08-06 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3747696B2 (en) * | 1999-07-23 | 2006-02-22 | 株式会社Ｓｕｍｃｏ | Heat shielding member of silicon single crystal pulling device |
| CN201864792U (en) * | 2010-12-10 | 2011-06-15 | 镇江荣德新能源科技有限公司 | Guide cylinder for czochralski method monocrystalline silicon growing device and monocrystalline silicon growing device |
| CN202202016U (en) * | 2011-07-07 | 2012-04-25 | 杭州慧翔电液技术开发有限公司 | Single crystal furnace thermal field device capable of measuring distance between liquid level of molten silicon and flow guide barrel |
| CN202898594U (en) * | 2012-11-09 | 2013-04-24 | 英利能源（中国）有限公司 | Molten silicon liquid surface ranging component for crystalline silicon melting furnace and crystalline silicon melting furnace |
| CN203530478U (en) * | 2013-09-27 | 2014-04-09 | 上海申和热磁电子有限公司 | Quartz pin used in single crystal furnace |
-
2013
- 2013-09-27 CN CN201310447045.9A patent/CN104060321A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3747696B2 (en) * | 1999-07-23 | 2006-02-22 | 株式会社Ｓｕｍｃｏ | Heat shielding member of silicon single crystal pulling device |
| CN201864792U (en) * | 2010-12-10 | 2011-06-15 | 镇江荣德新能源科技有限公司 | Guide cylinder for czochralski method monocrystalline silicon growing device and monocrystalline silicon growing device |
| CN202202016U (en) * | 2011-07-07 | 2012-04-25 | 杭州慧翔电液技术开发有限公司 | Single crystal furnace thermal field device capable of measuring distance between liquid level of molten silicon and flow guide barrel |
| CN202898594U (en) * | 2012-11-09 | 2013-04-24 | 英利能源（中国）有限公司 | Molten silicon liquid surface ranging component for crystalline silicon melting furnace and crystalline silicon melting furnace |
| CN203530478U (en) * | 2013-09-27 | 2014-04-09 | 上海申和热磁电子有限公司 | Quartz pin used in single crystal furnace |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947180A (en) * | 2015-07-06 | 2015-09-30 | 麦斯克电子材料有限公司 | Method for determining crystal leading crucible position of single crystal furnace |
| WO2020156213A1 (en) * | 2019-02-01 | 2020-08-06 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20151231 Address after: 750021, Guangming West Road, Yinchuan Development Zone, the Ningxia Hui Autonomous Region, 25 Applicant after: Ningxia silver and Amperex Technology Limited Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140924 |
|
| RJ01 | Rejection of invention patent application after publication |