CN104051573B - A kind of silicon chip mask leather producing process - Google Patents
A kind of silicon chip mask leather producing process Download PDFInfo
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- CN104051573B CN104051573B CN201410271292.2A CN201410271292A CN104051573B CN 104051573 B CN104051573 B CN 104051573B CN 201410271292 A CN201410271292 A CN 201410271292A CN 104051573 B CN104051573 B CN 104051573B
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- silicon chip
- mask
- silicon
- producing process
- sol
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 96
- 239000010703 silicon Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000008569 process Effects 0.000 title claims abstract description 21
- 239000010985 leather Substances 0.000 title claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 239000000428 dust Substances 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 210000002268 wool Anatomy 0.000 claims description 24
- 235000008216 herbs Nutrition 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000003518 caustics Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000004278 EU approved seasoning Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007591 painting process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of silicon chip mask leather producing process, in silicon chip working process, first apply a layer thickness with sol evenning machine at silicon chip surface and evenly and there is the mix silica sol of autogenous shrinkage, then at silicon sol coatingsurface uniform deposition one layer of carbon dust, drying or leave standstill process after, silicon chip surface is formed has neat structure mask layer, the silicon chip surface of respective area is exposed owing to silicon sol shrinks, then the silicon chip surface after mask is carried out acid corrosion, cleans demoulding by production technique routinely, can formation rule and regular matte. Technique of the present invention can prepare uniform matte, and through matte prepared by the present invention, it is possible not only to expand the absorption to different wave length in solar spectrum, greatly reduce reflectivity, it is thus possible to the electricity conversion of further lifting solar cell, promote overall economic benefit, reduce the production cost of unit production capacity.
Description
Technical field
The present invention relates to the technology of preparing of solar energy battery adopted silicon chip, it is specifically related to a kind of silicon chip mask leather producing process, belongs to solar energy battery adopted silicon chip mask making herbs into wool technical field.
Background technology
Sun power, as a kind of renewable and clean energy resource, is progressively paid close attention to by common people and is used. In numerous solar products, the market share of silica-based solar cell assembly reaches more than 90%. Silicon wafer suede is that a kind of surface has silicon materials that are in order accurate or periodic micro structure, and sunlight has after making herbs into wool very low reflectivity and very high specific absorption, and the light near ultraviolet near infrared is almost all absorbed by it. Matte has the characteristic that wide spectral absorbs, it is possible to improve the photoelectric transformation efficiency of solar cell assembly, therefore has very big application prospect in prepared by solar cell.
Polycrystalline silicon surface wool manufacturing method, generally adopts following steps: silicon chip is carried out pre-washing and removes affected layer; Ultrasonic atomizatio technique or electrostatic painting process is adopted to cover the discontinuous plastic grain film of lid layer as mask at silicon chip surface; Silicon chip is placed in acid, alkaline solution carry out corrosion making herbs into wool; Silicon chip acetone after step 3 is washed plastic grain film, then by washed with de-ionized water, dries silicon chip.
The people such as Ai Fanfan (artificial lens journal, in April, 2009) adopt " silicon nitride mask legal system alternative emitter crystalline silicon solar cell ", Chinese patent CN101814547 then adopts printing grid line mask mode to prepare crystal silicon solar cell with selective emitter; CN102412338 then adopts optical mask process technology to carry out making herbs into wool. Although aforesaid method obtains certain effect, but technique is more complicated, preparation cost is also higher, and making herbs into wool effect is not ideal, and industrial application has bigger difficulty.
Summary of the invention
It is an object of the invention to provide a kind of silicon chip mask leather producing process that can realize promoting in production, technique is simple and easy to do, mask making herbs into wool is effective, it is possible to is applied in solar cell and prepares production field, significantly improves the photoelectric transformation efficiency efficiency of battery.
For achieving the above object, the technical scheme of the present invention is:
A kind of silicon chip mask leather producing process, comprises cleaning, mask, making herbs into wool, cleaning step, and described mask step is as follows:
In silicon chip substrate after the cleaning, first with the rotating speed of sol evenning machine with 3500 revs/min, even coating one layer of silicon sol mixed coating with autogenous shrinkage characteristic in 60 seconds; Again with gas phase deposition technology at silicon sol coatingsurface uniform deposition one layer of carbon dust, carbon dust deposit thickness is 2��3 ��m; Then carry out oven dry and make silicon sol coating shrinkage, finally form uniform sequential mask layer at silicon chip surface, silicon sol should be exposed after forming mask layer and shrink rear uniform sequential surface of silicon, namely expose uniform sequential surface of silicon. Above-mentioned silicon sol is nano level silica dioxide granule and the mixed solution of water and solvent oxidation sodium.
In above-mentioned mask step, it is also possible in silicon chip substrate after the cleaning, adopting sol evenning machine with the rotating speed of 3500 revs/min, evenly apply one layer of silicon sol coating being added with carbon dust in 60 seconds, wherein carbon dust deposit thickness is preferably 2��3 ��m; Then carry out oven dry and make silicon sol coating shrinkage, finally form uniform sequential mask layer at silicon chip surface; This mask layer forms the exposed structure that the surface of rear silicon chip should be ordering rule, namely exposes uniform sequential surface of silicon.
Above-mentioned carbon powder particle granularity is 100��500nm.
Deposit or after coating carbon dust, coating is carried out drying operation, is specifically operating as 120 DEG C of hot-air seasonings, silicon sol coating dehydration is reunited and shrinks, form uniform sequential mask layer at silicon chip surface. The uniform sequential mask layer of formation can be shunk after coatingsurface self or heating. The coating leaving standstill contraction as adopted then does not need heating, and autogenous shrinkage solidifies.
In above-mentioned making herbs into wool step, acid (alkali) the corrosive fluid concentration after mask should carry out suitable allotment and improve, as acid (alkali) the corrosive fluid concentration after mask should improve 5%��15% than normal concentration. Also can improve with production technique and adjust further. Mainly accelerate the speed of response of corrosion reaction, the control corrosion rate degree of depth.
Above-mentioned cleaning step is after adopting existing technique that silicon chip after making herbs into wool washes surface mask coating, then silicon chip is put into pure water, utilizes ultrasonic wave to carry out degumming cleaning at 75 DEG C. Namely cleaned post-drying obtains the matte with high light specific absorption prepared by present method.
The useful effect obtained:
Adopt mask leather producing process of the present invention, silicon chip surface mask quality and homogeneity thereof can be controlled easily, obviously improve systematicness and the homogeneity of silicon chip making herbs into wool matte, it is thus possible to the light absorption ratio of further lifting silicon chip and the matching with spectrum, improve cell piece efficiency, promote economic benefit. Technique of the present invention is simple and easy to do, quality controllable, has a good application prospect.
Accompanying drawing illustrates:
Fig. 1 is mask flow process 1 schematic diagram of the present invention
Fig. 2 is mask flow process 2 schematic diagram of the present invention
Fig. 3 is making herbs into wool front and rear surfaces reflectivity comparison diagram of the present invention
1, silicon chip; 2, silicon sol coating; 3, carbon dust.
Embodiment:
Below in conjunction with drawings and Examples, the present invention is described in further detail:
Embodiment 1
See Fig. 1, on silicon chip (1) substrate after the cleaning, adopt sol evenning machine with the rotating speed of 3500 revs/min, in 50 seconds, evenly apply the silicon sol coating (2) that one layer of nanometer silicon dioxide particle and water and solvent oxidation sodium are made; Then with gas phase deposition technology silicon sol coatingsurface uniform deposition one layer of carbon dust (3), carbon dust is of a size of 100��500nm, carbon dust deposit thickness is about 2��3 ��m, is about 1/3rd of making herbs into wool matte design thickness, is conducive to ensureing making herbs into wool effect; Then carry out oven dry and make silicon sol coating shrinkage, finally form uniform sequential mask layer at silicon chip surface, expose uniform sequential surface of silicon. Adopting existing technique that silicon face after mask carries out acid (alkali) subsequently and lose making herbs into wool, the conventional working concentration of acid (alkali) concentration ratio exceeds 5%; After washing silicon chip surface mask coating after making herbs into wool, then silicon chip is put into pure water, at 75 DEG C, utilize ultrasonic wave to carry out degumming cleaning; Clean the matte with high light specific absorption that namely post-drying obtains being prepared by present method.
Embodiment 2
See Fig. 2, in silicon chip substrate after the cleaning, adopt sol evenning machine with the rotating speed of 3500 revs/min, in 60 seconds, evenly apply one layer of silicon sol coating being added with carbon dust; Wherein carbon dust granularity is 100��500nm, and carbon dust deposit thickness is about about 1/3rd of matte design thickness; Silicon sol adopts nanometer silicon dioxide particle and water and solvent oxidation sodium to make, and carbon powder content ensures the settled layer of uniform sequential formation of deposits 2��3 ��m.
Then carry out oven dry and make silicon sol coating shrinkage, finally form uniform sequential mask layer at silicon chip surface, expose uniform sequential surface of silicon. Adopting existing technique that silicon face after mask carries out acid (alkali) subsequently and lose making herbs into wool, the conventional working concentration of acid (alkali) concentration ratio exceeds 15%; After washing silicon chip surface mask coating after making herbs into wool, then silicon chip is put into pure water, at 75 DEG C, utilize ultrasonic wave to carry out degumming cleaning; Clean the matte with high light specific absorption that namely post-drying obtains being prepared by present method.
Silicon chip surface reflectivity contrast before and after Fig. 3 making herbs into wool, adopt this above-mentioned mask etching method, it is possible to obviously improve systematicness and the homogeneity of silicon chip making herbs into wool matte, it is thus possible to the light absorption ratio of further lifting silicon chip and the matching with spectrum, improve cell piece efficiency, promote economic benefit.
The above-described specific embodiment being only the application, described embodiment is also not used to restriction this patent protection domain, and the equivalent structure change that therefore specification sheets of every utilization this patent and accompanying drawing content are done, all should be included in the protection domain of the application with reason.
Claims (9)
1. a silicon chip mask leather producing process, comprises cleaning, mask, making herbs into wool, cleaning step, it is characterised in that described mask step is as follows:
In silicon chip substrate after the cleaning, first with the rotating speed of sol evenning machine with 3500 revs/min, even coating one layer of silicon sol coating with autogenous shrinkage characteristic in 60 seconds; Again with gas phase deposition technology at silicon sol coatingsurface uniform deposition one layer of carbon dust; Then carry out oven dry and make silicon sol coating shrinkage, finally form uniform sequential mask layer at silicon chip surface; This mask layer forms the exposed structure that the surface of rear silicon chip should be ordering rule, namely exposes uniform sequential surface of silicon.
2. a kind of silicon chip mask leather producing process according to claim 1, it is characterised in that described carbon dust deposit thickness is 2��3 ��m.
3. a kind of silicon chip mask leather producing process according to claim 1, it is characterised in that described silicon sol is nano level silica dioxide granule and the mixed solution of water and solvent oxidation sodium.
4. a kind of silicon chip mask leather producing process according to claim 1, it is characterised in that described mask step is as follows:
In silicon chip substrate after the cleaning, adopt sol evenning machine with the rotating speed of 3500 revs/min, in 60 seconds, evenly apply one layer of silicon sol coating being added with carbon dust; Then carry out oven dry and make silicon sol coating shrinkage, finally form uniform sequential mask layer at silicon chip surface; This mask layer forms the exposed structure that the surface of rear silicon chip should be ordering rule, namely exposes uniform sequential surface of silicon.
5. a kind of silicon chip mask leather producing process according to claim 4, it is characterised in that in described mask layer, carbon dust deposit thickness is 2��3 ��m.
6. a kind of silicon chip mask leather producing process according to claim 1,4, it is characterised in that the granularity of described carbon dust is 100��500nm.
7. a kind of silicon chip mask leather producing process according to claim 1,4, it is characterised in that form the uniform covering coating of point-like after described silicon sol coating shrinkage at silicon chip surface, the silicon chip substrate of covering and the surface being corroded are isolated.
8. a kind of silicon chip mask leather producing process according to claim 1, it is characterised in that described making herbs into wool step adopts existing technique that silicon face after mask carries out acid or alkaline etching making herbs into wool, acid or caustic corrosion liquid concentration ratio normal concentration after mask rise 5%��15%.
9. a kind of silicon chip mask leather producing process according to claim 1, it is characterized in that described cleaning step is after adopting common process that silicon chip after making herbs into wool washes surface mask coating, silicon chip is put into pure water again, at 75 DEG C, utilizes ultrasonic wave to carry out degumming cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410271292.2A CN104051573B (en) | 2014-06-17 | 2014-06-17 | A kind of silicon chip mask leather producing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410271292.2A CN104051573B (en) | 2014-06-17 | 2014-06-17 | A kind of silicon chip mask leather producing process |
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| Publication Number | Publication Date |
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| CN104051573A CN104051573A (en) | 2014-09-17 |
| CN104051573B true CN104051573B (en) | 2016-06-01 |
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| CN107342336B (en) * | 2017-06-28 | 2018-12-07 | 泉州泉一科技有限公司 | A kind of preparation method of isotypy polycrystalline silicon suede |
| CN107633997B (en) * | 2017-08-10 | 2019-01-29 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FR2914630B3 (en) * | 2007-04-04 | 2009-02-06 | Saint Gobain | METHOD FOR SURFACE STRUCTURING OF A SOL-GEL LAYER PRODUCT, STRUCTURED SOL-GEL LAYER PRODUCT |
| WO2009078190A1 (en) * | 2007-12-17 | 2009-06-25 | Toppan Printing Co., Ltd. | Pattern forming method and pattern formed body |
| CN102903793A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Preparing method of selective emitter battery slice mask |
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