CN104051448A - 微型集成高灵敏度光电心率传感器 - Google Patents

微型集成高灵敏度光电心率传感器 Download PDF

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Publication number
CN104051448A
CN104051448A CN201410279268.3A CN201410279268A CN104051448A CN 104051448 A CN104051448 A CN 104051448A CN 201410279268 A CN201410279268 A CN 201410279268A CN 104051448 A CN104051448 A CN 104051448A
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China
Prior art keywords
heart rate
rate sensor
sensitivity
integrated high
miniature integrated
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CN201410279268.3A
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刘松涛
董楚才
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SHENZHEN HUAJING BAOFENG ELECTRONIC Co Ltd
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SHENZHEN HUAJING BAOFENG ELECTRONIC Co Ltd
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Priority to CN201410279268.3A priority Critical patent/CN104051448A/zh
Publication of CN104051448A publication Critical patent/CN104051448A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)

Abstract

本发明实现一种微型集成化的高灵敏度光电心率传感器，它集成了两个发黄绿光的LED芯片与一个带有光学滤波涂层和放大功能的光敏接收芯片。可以实现光电心率传感器的微小型化、一体化、抗干扰性和高灵敏性。利用标准的半导体封装生产工艺成型，工艺成熟可靠、一致性好。该传感器可广泛应用于智能手表、智能手环、智能手机、便携医疗仪器等便携产品中做心率检测用，也可用于需要类似功能的其它任何产品。

Description

微型集成高灵敏度光电心率传感器
所属技术领域
本发明涉及半导体芯片工艺、半导体封装、纳米光学涂层制作、LED芯片选型等高科技领域。它解决了光电心率传感器的高灵敏度、抗干扰能力强、体积微小型化及一体化封装等技术难题。
背景技术
目前，公知的光电心率传感器是由独立封装的发光LED与独立封装的光敏三极管组成。由于发光LED与光敏三极管是两个完全独立的封装，在应用时两个封装的安装距离太近不能安装，太远占据的空间位置就会很大，同时光信号就会衰减很大。在两个封装的安装过程中每次都会有误差，所以每个封装的最终安装位置都会有一定的偏差，位置的偏差就直接影响受光的角度，受光的角度不能保持一致光信号就会有衰减。光信号有衰减灵敏度就会变低，精准度也会降低一致性也会不好。由于光敏三极管敏感光谱的广谱特性，决定了它对很多光谱都会有很高的响应，从而在使用的过程中很多光谱都会对光敏三极管产生很多的干扰。因此由独立封装的发光LED与独立封装的光敏三极管组成的光电心率传感器在应用的过程中经常会有测试不准确的问题。产品的精准度低、灵敏度低、一致性不好、抗干扰能力差、可靠性也不能保证，给后端应用企业造成很大的设计投入和终端产品的成本压力，给智能手表、智能手环、智能手机、便携医疗仪器等产业造成很多负面的影响。
发明内容
为了克服现有光电心率传感器在应用加工过程中所存在的产品灵敏度低、精准度低、一致性不好、抗干扰能力差、可靠性也不能保证等不足，本发明提供了一种微型集成化的高灵敏度光电心率传感器，灵敏度高、抗干扰能力强、体积微小、一体化封装。非常适合大批量生产和客户使用。
本发明解决其技术问题所采用的技术方案是：专门开发一个带有光学滤波涂层和放大功能的光敏接收芯片，解决抗干扰和提高灵敏度的问题，然后利用标准的半导体工艺将它与两个发黄绿光的LED芯片集成在一个封装体内，形成一个完整的光电传感器。
本发明的有益效果是：在心率测试仪的前端(传感器部分)解决抗干扰和对信号进行放大的问题比在后端解决这些问题的有效性要好得多，提高了传感器的易用性。两个发黄绿光的LED芯片集中在一个点发光，发光亮度高、发光角度一致、直接提高了产品的灵敏度与精准度。带有光学滤波涂层的接收芯片直接将不需要的光谱过滤掉了，所以抗干扰能力非常高，输出电信号稳定。而接收芯片的放大功能也直接提高了输出信号的强度，提高了传感器整体的灵敏度。同时，由于这是利用标准成熟的半导体生产工艺进行的，所以质量稳定、一致性好。
附图说明
图1是本发明微型集成高灵敏光电心率传感器。
图1中1.为具有引脚连接线路的基板，2.为两个发黄绿光的LED芯片，3.为带有光学滤波涂层的接收芯片，4.为芯片电极与基板进行连接的导线，5.为三个芯片的保护胶体。
具体实施方式
使用全自动固晶机器将两个发黄绿光的LED芯片如图1.2与一个带有光学滤波涂层和信号放大的光敏接收芯片如图1.3依次分别放在具有引脚连接线路的基板如图1.1上。再使用全自动的金丝球焊机依次将两个发黄绿光的LED芯片与一个带有光学滤波涂层的接收芯片上的所有电极与基板之间用导线如图1.4进行连接。再使用专用的模具与专用的胶体进行注胶成型，然后切割分离成单个传感器单元如图1.5。

Claims (1)

1.微型集成高灵敏度光电心率传感器，其特征是：包含两个发黄绿光的LED芯片与一个专门设计的带有光学滤波涂层和信号放大的光敏接收芯片，利用半导体工艺将它们集成到一个几平方毫米的微小封装体内。以上所述为本发明的优选实施案例，并不用于限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
CN201410279268.3A 2014-06-16 2014-06-16 微型集成高灵敏度光电心率传感器 Pending CN104051448A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019232954A1 (zh) * 2018-06-04 2019-12-12 歌尔股份有限公司 心率模组
CN111370395A (zh) * 2020-03-24 2020-07-03 青岛歌尔智能传感器有限公司 心率模组的封装结构、封装方法及可穿戴设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
案里白条: "Integrated Heart Rate Sensor LST1303", 《奇笛》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019232954A1 (zh) * 2018-06-04 2019-12-12 歌尔股份有限公司 心率模组
US11596319B2 (en) 2018-06-04 2023-03-07 Weifang Goertek Microelectronics Co., Ltd. Heart rate module
CN111370395A (zh) * 2020-03-24 2020-07-03 青岛歌尔智能传感器有限公司 心率模组的封装结构、封装方法及可穿戴设备
CN111370395B (zh) * 2020-03-24 2022-12-23 青岛歌尔智能传感器有限公司 心率模组的封装结构、封装方法及可穿戴设备

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Application publication date: 20140917