CN104049270B - Light guide, method for manufacturing light guide and radiation detector - Google Patents
Light guide, method for manufacturing light guide and radiation detector Download PDFInfo
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- CN104049270B CN104049270B CN201310598497.7A CN201310598497A CN104049270B CN 104049270 B CN104049270 B CN 104049270B CN 201310598497 A CN201310598497 A CN 201310598497A CN 104049270 B CN104049270 B CN 104049270B
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Abstract
The invention provides a light guide, a method for manufacturing the light guide and a radiation detector. The light guide comprises a light inlet surface and a light outlet surface, wherein the light inlet surface is parallel to the light outlet surface, the size of the light inlet surface is equal to the size of the light outlet surface of a crystal array of the detector, the size of the light outlet surface is equal to the sum of the sizes of multiple photoelectric converters of the detector, surface treatment is conducted on all the surfaces of the light guide, multiple kerfs filled with preset light-reflecting media are formed in the light guide, the kerfs are distributed symmetrically with the perpendicular bisector of the light inlet surface and the light outlet surface of the light guide as the axis, visible light emitted by scintillation crystal is distributed to the multiple photoelectric converters in the detector through the kerfs, the visible light transmitted to the light guide by the scintillation crystal is made to be in an optical signal transmission direction through the light guide where the kerfs are formed and is limited in a certain area, the visible light emitted by the scintillation crystal can be accurately distributed to the effective receiving areas of the multiple photoelectric converters through the light guide, the amount of visible light entering the walls of the photoelectric converters can be reduced, and the resolution ratio of the detector is increased.
Description
Technical field
The present invention relates to optical detector technology field, more particularly to a kind of photoconduction and preparation method thereof, radiation detector.
Background technology
Positron emission tomography imaging-computed tomography（Positron Emission Tomography-
Computed Tomography, PET-CT）Equipment and single photon emission computerized tomography (Single-Photon
Emission Computed Tomography, SPECT) equipment is all typical medical imaging device now.Wherein, detector
As the core component of PET-CT or SPECT, it is mainly used in the positive electron released in detectable radionuclide decay process
With γ photon produced after electron annihilation.
Detector mainly includes scintillation crystal and optical-electrical converter.Scintillation crystal can be single bulky crystal,
Can be the crystal array that multiple fritter lattices are formed, be mainly used in for γ photon being converted into visible ray.Optical-electrical converter can
To be photomultiplier or photodiode etc., it is mainly used in it will be seen that light is converted into electric signal.The work of PET-CT equipment is former
Reason：Positive electron is discharged, positive electron and electron annihilation produce that a pair of energy be equal and direction during radionuclide decay
Contrary γ photon, after γ photon enters scintillation crystal, can make scintillation crystal ionize, inspire visible ray, project four
Visible ray on individual optical-electrical converter is converted into electric signal output.On each optical-electrical converter the intensity of produced electric signal with
The intensity of its received visible ray is directly proportional, and the intensity of the electric signal being exported according to each optical-electrical converter obtains γ light
The energy of son and γ photon incide the position of scintillation crystal.
γ photon incides scintillation crystal and inspires visible ray it is seen that light projection is on four optical-electrical converters, when exciting
When the light photon going out accurately projects four optical-electrical converters, the electric signal that each optical-electrical converter is exported can essence
The really quantity of the light photon that reflection optical-electrical converter should receive, then the resolution ratio of detector is just high.
In existing detector, scintillation crystal and optical-electrical converter direct-coupling, the output face of scintillation crystal visible ray with
The area of the receiving plane of optical-electrical converter visible ray is identical.Wall due to optical-electrical converter cannot receive the photon of visible ray,
The photon projecting the wall visible ray of each optical-electrical converter from scintillation crystal cannot be received, the having of each optical-electrical converter
Limited by effect light area, the photon of the visible ray that optical-electrical converter can receive reduces, and the electric signal of optical-electrical converter output subtracts
Weak, the position that the energy of γ photon of gained and γ photon incide scintillation crystal is inaccurate, leads to the resolution ratio of detector
Reduce.
At present, the method for raising detector resolution commonly used in the art is the size reducing scintillation crystal, scintillation crystal
Reduce, the minimum lattice generating the scintillation crystal of visible ray diminishes, the visible ray that in scintillation crystal, each lattice is excited can be made
Produce crosstalk, increase the complexity of scintillation crystal light splitting；And, reduce the size of scintillation crystal, can lead to and original flicker
Crystal phase ratio, subtracting the visible ray that undersized scintillation crystal marginal position excites can weaken, and also result in reduction detector and differentiate
Rate.
Content of the invention
In view of this, the invention provides a kind of photoconduction and preparation method thereof, radiation detector, scintillation crystal need not be reduced
Size can improve the resolution ratio of detector.
A kind of photoconduction for radiation detector, described photoconduction includes:
Incidence surface is parallel with exiting surface, and described incidence surface is equal sized with the exiting surface of detector crystal array, described go out
The area of light face and the multiple optical-electrical converter of detector and equal sized；
The all surface of photoconduction is all surface-treated, and photoconduction is provided with and is filled with the multiple of default reflective medium and cuts
Seam, described joint-cutting is distributed with the perpendicular bisector of photoconduction incidence surface and exiting surface for axial symmetry, and scintillation crystal is excited by described joint-cutting
The visible ray going out multiple optical-electrical converters to detector for the light splitting respectively.
Optionally, described photoconduction also includes：
The edge line of light guide side is chamfering with any one or more angles in four angles formed by photoconduction exiting surface,
Angle outer surface scribbles default reflective medium, and the visible reflectance that scintillation crystal edge is inspired is turned by described chamfering to photoelectricity
Parallel operation is received.
Optionally,
Identical with the thickness of photoconduction near the joint-cutting depth of four joint-cuttings of light guide side, photoconduction is cut in one
Heart light guide block, four edge-light guide blocks and four drift angle light guide blocks.
A kind of preparation method of photoconduction, described photoconduction is used for the visible ray that scintillation crystal in detector is inspired respectively
Multiple optical-electrical converters to detector for the light splitting, methods described includes：
Determine the size of photoconduction incidence surface according to the exiting surface of scintillation crystal, the incidence surface according to all optical-electrical converters
With the size determining photoconduction exiting surface；
The all surface of the photoconduction determining after size is surface-treated；
Determine the light splitting ratio of photoconduction using the refractive index of photoconduction and the reflectivity of default reflective medium；
Determine the lancing parameter of photoconduction using described light splitting ratio, described lancing parameter includes joint-cutting depth and every two
Joint-cutting distance between joint-cutting；
Using described lancing parameter, joint-cutting process is carried out to the photoconduction after surface treatment, and fill default anti-in joint-cutting
Optical medium, visible ray multiple light to detector for the light splitting respectively that scintillation crystal is inspired by the photoconduction after making joint-cutting process
Electric transducer.
Optionally, methods described also includes：
To any one in edge line and four angles formed by photoconduction exiting surface of the light guide side after surface treatment or
Multiple carry out chamfered, chamfered outer surface scribbles default reflective medium, makes the photoconduction after chamfered by scintillation crystal side
The visible reflectance that edge is inspired is received to optical-electrical converter.
Optionally, described determine that the lancing parameter of photoconduction includes using described light splitting ratio：
Scintillation crystal model is set up according to the crystalline size of scintillation crystal, crystal reflection rate and crystal refractive index, according to
Photoconduction after surface treatment sets up photoconduction model；
Calculate theoretical lancing parameter using light splitting ratio, described theory lancing parameter includes theoretical joint-cutting depth and every two
Theoretical joint-cutting distance between individual symmetrical joint-cutting；
The theoretical lancing parameter of adjustment obtains multiple alternative lancing parameter, the light guided mode of simulation setting different modulating lancing parameter
The visible ray that type exports to scintillation crystal model carries out the location drawing of scintillation crystal being obtained after light splitting；
The position decoding precision obtaining the scintillation crystal location drawing is not less than alternative lancing parameter conduct during the first preset value
Lancing parameter.
Optionally, described adjustment theory lancing parameter obtains multiple alternative lancing parameter, simulation setting different modulating joint-cutting
The visible ray that the photoconduction model of parameter exports to scintillation crystal model carries out the location drawing of scintillation crystal being obtained after light splitting
Including：
The theoretical joint-cutting depth of adjustment obtains multiple alternative joint-cutting depth, the different alternative joint-cutting depth of simulation setting, same reason
The scintillation crystal carrying out by the visible ray that the photoconduction model of joint-cutting distance exports to scintillation crystal model being obtained after light splitting
The location drawing；
The position decoding precision obtaining the scintillation crystal location drawing is not less than alternative joint-cutting depth conduct during the second preset value
Joint-cutting depth；
Adjustment theoretical joint-cutting distance obtains multiple alternative joint-cutting distances, and the different alternative joint-cutting distance of simulation setting, with all
The position of the scintillation crystal that the visible ray that the photoconduction model of seam depth exports to scintillation crystal model carries out being obtained after light splitting
Figure.
Optionally, described adjustment theory lancing parameter obtains multiple alternative lancing parameter, simulation setting different modulating joint-cutting
The visible ray that the photoconduction model of parameter exports to scintillation crystal model carries out the location drawing of scintillation crystal being obtained after light splitting
Including：
Adjustment theoretical joint-cutting distance obtains multiple alternative joint-cutting distances, the different alternative joint-cutting distance of simulation setting, same reason
The scintillation crystal carrying out by the visible ray that the photoconduction model of joint-cutting depth exports to scintillation crystal model being obtained after light splitting
The location drawing；
The position decoding precision of the acquisition scintillation crystal location drawing is not less than alternative joint-cutting during three preset values apart from conduct
Joint-cutting distance；
The theoretical joint-cutting depth of adjustment obtains multiple alternative joint-cutting depth, and the different alternative joint-cutting depth of simulation setting, with all
The position of the scintillation crystal that the visible ray that the photoconduction model of seam distance exports to scintillation crystal model carries out being obtained after light splitting
Figure.
Optionally, methods described also includes：
The photoconduction model visible ray that scintillation crystal model is exported of simulation setting different modulating chamfering parameter is carried out point
The location drawing of the scintillation crystal being obtained after light, described chamfering parameter includes angle and cambered surface；
The position decoding precision obtaining the scintillation crystal location drawing is not less than chamfering parameter during four preset values；
Then to any one in the edge line of light guide side and four angles formed by photoconduction exiting surface after surface treatment
Or multiple angle does chamfered and includes：
To any one in edge line and four angles formed by photoconduction exiting surface of the light guide side after surface treatment or
Chamfered is done using described chamfering parameter in multiple angles.
A kind of radiation detector, described detector includes：
Scintillation crystal, at least four optical-electrical converters and photoconduction of the present invention；
Described scintillation crystal is by single bulky crystal or the crystal array that is made up of at least two fritter lattices, described
Scintillation crystal passes through optical coupled medium direct-coupling with photoconduction；
The incidence surface of described photoconduction is equivalently-sized with the exiting surface of described scintillation crystal, the exiting surface of described photoconduction with described
The sum of the incidence surface of at least four optical-electrical converters equivalently-sized, photoconduction is provided with and is filled with cutting of default reflective medium
Seam；
Described photoconduction passes through optical coupled medium direct-coupling with described at least four optical-electrical converters；
Described scintillation crystal is used for inspiring visible ray, and by the visible light output inspiring to photoconduction；
The visible ray that described photoconduction is used for being inspired scintillation crystal distinguishes light splitting at least four optical-electrical converters；
At least four optical-electrical converters, for being converted into electric signal output by received visible ray.
As shown in the above, the method have the advantages that：
The invention provides a kind of photoconduction and preparation method thereof, radiation detector, described photoconduction includes：Incidence surface with go out light
Face is parallel, and described incidence surface is equal sized with the exiting surface of detector crystal array, described exiting surface and the multiple photoelectricity of detector
The area sum of converter equal sized；The all surface of photoconduction is all surface-treated, photoconduction is provided be filled with default
Multiple joint-cuttings of reflective medium, described joint-cutting is distributed with the perpendicular bisector of photoconduction incidence surface and exiting surface for axial symmetry, described joint-cutting
Visible ray multiple optical-electrical converters to detector for the light splitting respectively that scintillation crystal is inspired, the photoconduction after joint-cutting process
Scintillation crystal is exported visible ray to photoconduction on the direction of optical signal transmission, is limited in certain region, photoconduction is permissible
In the effective receiving zone domain of multiple optical-electrical converters to detector for the accurate light splitting of visible ray that scintillation crystal is exported, subtract
Incide the visible ray on the wall of optical-electrical converter less, improve the resolution ratio of detector.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of light guide embodiments one structural representation for radiation detector of the present invention；
Fig. 2 is joint-cutting example schematic on the incidence surface two-dimensional directional of photoconduction of the present invention；
Fig. 3 is joint-cutting schematic diagram in photoconduction one-dimensional square of the present invention；
Fig. 4 is a kind of preparation method embodiment two flow chart of photoconduction of the present invention；
Fig. 5 is a kind of preparation method embodiment three flow chart of photoconduction of the present invention；
Fig. 6 is a kind of preparation method example IV flow chart of photoconduction of the present invention；
Fig. 7 is the scintillation crystal location drawing under the different alternative joint-cutting depth of the present invention；
Fig. 8 be the different alternative joint-cutting of the present invention apart under the scintillation crystal location drawing；
Fig. 9 is the scintillation crystal location drawing under present invention difference chamfering parameter；
Figure 10 is a kind of present invention radiation detector example IV structural representation.
Specific embodiment
The invention discloses a kind of photoconduction preparation method and radiation detector, the photoconduction that preparation is provided with joint-cutting will flash crystalline substance
The visible ray that body is inspired multiple optical-electrical converters to detector for the light splitting respectively, improve the resolution ratio of detector.
Below in conjunction with the accompanying drawings the specific embodiment of the invention is described in detail.
Embodiment one
Fig. 1 is a kind of light guide embodiments one structural representation for radiation detector of the present invention, and described photoconduction includes：
Incidence surface 101 is parallel with exiting surface 102, the exiting surface size phase of described incidence surface 101 and detector crystal array
Deng, described exiting surface 102 and the multiple optical-electrical converter of detector area and equal sized.
The incidence surface 101 of photoconduction is used for the visible ray of the crystal array output of pick-up probe, by the visible ray receiving
After carrying out light splitting, export from exiting surface 102 to multiple optical-electrical converters of detector.The incidence surface 101 of photoconduction and exiting surface 102
Size can equal it is also possible to unequal.
The all surface of photoconduction is all surface-treated, and photoconduction is provided with the multiple joint-cuttings being filled with default reflective medium
103, described joint-cutting 103 is distributed with the perpendicular bisector of photoconduction incidence surface and exiting surface for axial symmetry, and described joint-cutting 103 is by scintillation crystal
The visible ray being inspired multiple optical-electrical converters to detector for the light splitting respectively.
Joint-cutting 103 1 shown in Fig. 1 has 10, wherein crosses two joint-cuttings of photoconduction upper and lower surface central point
Joint-cutting depth is 0, and in figure only draws 8 joint-cuttings that wherein joint-cutting depth is not 0, as shown in Figures 2 and 3, near light guide side
The joint-cutting depth of four joint-cuttings in face is identical with the thickness of photoconduction, and photoconduction is cut into a center light guide block 201, four edges
Light guide block 202 and four drift angle light guide blocks 203.
Fig. 2 is joint-cutting example schematic on the incidence surface two-dimensional directional of photoconduction of the present invention.Photoconduction one-dimensional square shown in Fig. 2
On joint-cutting have 5, the depth of the joint-cutting wherein overlapping with the perpendicular bisector of the incidence surface perpendicular to photoconduction and exiting surface is 0mm.
Fig. 3 is joint-cutting schematic diagram in photoconduction one-dimensional square of the present invention, and the joint-cutting depth of joint-cutting 301 is 3mm, joint-cutting 302
Joint-cutting depth is 1.263mm, and the joint-cutting depth of joint-cutting 303 is 0mm, and the joint-cutting depth of joint-cutting 304 is 1.263mm, joint-cutting 305
Joint-cutting depth is 3mm.Joint-cutting 303 is overlapped with the perpendicular bisector of the incidence surface perpendicular to photoconduction and exiting surface, joint-cutting 301 and joint-cutting
305 is symmetrical centered on perpendicular to the incidence surface of photoconduction and the perpendicular bisector of exiting surface, and joint-cutting 302 and joint-cutting 304 are with vertical
Symmetrical centered on the incidence surface of photoconduction and the perpendicular bisector of exiting surface, the joint-cutting deep equality of joint-cutting 301 and joint-cutting 305,
The joint-cutting deep equality of joint-cutting 302 and joint-cutting 304.Joint-cutting 301 is 24.6mm with the joint-cutting distance of joint-cutting 305, joint-cutting 302 with cut
The joint-cutting distance of seam 304 is 13.44mm.
Wherein, described surface treatment includes hair side process or polishing, the side of photoconduction can also be applied lighttight
Medium.
Optionally, described photoconduction also includes：
The edge line of light guide side is chamfering with any one or more angles in four angles formed by photoconduction exiting surface,
Angle outer surface scribbles default reflective medium, and the visible reflectance that scintillation crystal edge is inspired is turned by described chamfering to photoelectricity
Parallel operation is received.
Described default reflective medium includes polytetrafluoroethylene (PTFE) reflectance coating, magnesia or titanium oxide.In addition, can also adopt
With the others reflective medium such as barium sulfate or ESR reflective membrane, no longer repeat one by one here.
The material of described photoconduction includes epoxy resin, acrylic resin, silica gel or polyurethane.In addition, can also adopt
With the material such as glass or polymethyl-benzene e pioic acid methyl ester, no longer repeat one by one here.
As shown in the above, the method have the advantages that：
Incidence surface is parallel with exiting surface, and described incidence surface is equal sized with the exiting surface of detector crystal array, described go out
The area of light face and the multiple optical-electrical converter of detector and equal sized；The all surface of photoconduction is all surface-treated, light
Lead and be provided with the multiple joint-cuttings being filled with default reflective medium, described joint-cutting with the perpendicular bisector of photoconduction incidence surface and exiting surface is
Axial symmetry is distributed, visible ray multiple opto-electronic conversion to detector for the light splitting respectively that scintillation crystal is inspired by described joint-cutting
Device, scintillation crystal is exported visible ray to photoconduction on the direction of optical signal transmission by the photoconduction after joint-cutting is processed, and is limited in one
In fixed region, the accurate light splitting of visible ray that scintillation crystal can be exported by the photoconduction multiple optical-electrical converters to detector
Effective receiving zone domain in, reduce and incide visible ray on the wall of optical-electrical converter, improve the resolution ratio of detector.
Embodiment two
Fig. 4 is a kind of preparation method embodiment two flow chart of photoconduction of the present invention, and described photoconduction is used for dodging in detector
The visible ray that bright crystal is inspired multiple optical-electrical converters to detector for the light splitting respectively, methods described includes：
Step 401：Determine the size of photoconduction incidence surface according to the exiting surface of scintillation crystal, according to all optical-electrical converters
Size that is incidence surface and determining photoconduction exiting surface.
γ photon inspires visible ray after inciding scintillation crystal, scintillation crystal will be seen that optical transport to photoconduction.Visible ray
The face projected on scintillation crystal is the exiting surface of scintillation crystal it is seen that the incident face on photoconduction of light is the incidence surface of photoconduction.
The size of the exiting surface of scintillation crystal is equal sized with photoconduction incidence surface, so can make the visible ray from scintillation crystal outgoing
All incide in photoconduction.
Visible ray, after photoconduction light splitting, transmits to multiple optical-electrical converters of detector.Generally, detector
There are four optical-electrical converters, the optical-electrical converter array that composition is 2 × 2, each optical-electrical converter is responsible for receiving a quarter
The visible ray that individual photoconduction exiting surface projects.2 × 3 or 3 × 3 isostructural optical-electrical converter battle arrays can also be set according to actual conditions
Row.The size of photoconduction exiting surface and multiple optical-electrical converter incidence surfaces and equal sized, so can make from photoconduction outgoing
Visible ray be photoelectrically converted as far as possible device receive.
When the size and multiple optical-electrical converter incidence surfaces of the exiting surface of scintillation crystal and equal sized when, photoconduction
Incidence surface size is equal sized with exiting surface, and now, photoconduction is a rectangular structure；If the size of scintillation crystal exiting surface is big
When the size of the sum of multiple optical-electrical converter incidence surfaces, the incidence surface size of photoconduction is more than exiting surface size, and now, photoconduction is
One truncated rectangular pyramids.
Illustrate, when the cuboid that the size of scintillation crystal is 38mm × 38mm × 30mm, if multiple opto-electronic conversion
The incidence surface of device and a size of 38mm × 38mm, then photoconduction may be sized to 38mm × 38mm × 3mm, photoconduction along
The thickness in the direction of optical transport is very thick without arranging, as long as meeting the light splitting demand to visible ray, is existed with reducing visible ray
Light loss in transmitting procedure, and save light-guide material.
Step 402：The all surface of the photoconduction determining after size is surface-treated.
The surface in all faces of photoconduction is surface-treated, be all-trans in the surface in order to prevent visible ray from inciding photoconduction
Penetrate, a part of visible ray cannot lead to light loss from photoconduction outgoing.It is seen that light after being surface-treated to all surface of photoconduction
Each surface inciding photoconduction is diffusing reflection, such that it is able to make to incide the visible light output of photoconduction to optical-electrical converter.
Step 403：Determine the light splitting ratio of photoconduction using the refractive index of photoconduction and the reflectivity of default reflective medium.
Light splitting ratio is relevant with the material of photoconduction and the material of the default reflective medium of light splitting being adopted, the material of photoconduction
Matter can use the refractive index description of photoconduction, and the material of default reflective medium can be retouched with the reflectivity of default reflective medium
State.Light splitting ratio is used for describing the light splitting ability to visible ray for the photoconduction.Light splitting ratio is more accurate, then the light splitting to visible ray for the photoconduction
Ability is higher.
Step 404：Determine the lancing parameter of photoconduction using described light splitting ratio, described lancing parameter include joint-cutting depth with
And the joint-cutting distance between every two joint-cuttings.
Photoconduction can be determined using light splitting ratio along the joint-cutting depth in the transmission direction of visible ray, and every two joint-cuttings
Between joint-cutting distance.
The number of the joint-cutting on photoconduction, is generally odd number in one-dimensional square, wherein one joint-cutting with perpendicular to
The perpendicular bisector of the incidence surface of photoconduction and exiting surface overlaps, and other joint-cuttings are to hang down in the incidence surface and exiting surface of photoconduction
Symmetrical two-by-two centered on line.Wherein, centered on perpendicular to the incidence surface of photoconduction and the perpendicular bisector of exiting surface symmetrical two
The joint-cutting depth of bar joint-cutting is identical.Joint-cutting distance between every two joint-cuttings, generally, refers to perpendicular to photoconduction
The distance between two symmetrical joint-cuttings centered on the perpendicular bisector of incidence surface and exiting surface.
The depth of two farthest symmetrical joint-cuttings and light centered on the incidence surface of photoconduction and the perpendicular bisector of exiting surface
The thickness led in optical transmission direction is equal, therefore, farthest centered on the incidence surface of photoconduction and the perpendicular bisector of exiting surface
Article two, photoconduction is cut into 9 pieces by symmetrical joint-cutting.That is, joint-cutting to major general's photoconduction cuts into 9 pieces of little photoconductions, every piece little light
Each surface led is surface-treated.
Illustrate：Fig. 2 is joint-cutting example schematic on the incidence surface two-dimensional directional of photoconduction of the present invention, the light shown in Fig. 2
Leading the joint-cutting in one-dimensional square has 5, the joint-cutting wherein overlapping with the perpendicular bisector of the incidence surface perpendicular to photoconduction and exiting surface
Depth is 0mm.
Fig. 3 is joint-cutting schematic diagram in photoconduction one-dimensional square of the present invention, and the joint-cutting depth of joint-cutting 301 is 3mm, joint-cutting 302
Joint-cutting depth is 1.263mm, and the joint-cutting depth of joint-cutting 303 is 0mm, and the joint-cutting depth of joint-cutting 304 is 1.263mm, joint-cutting 305
Joint-cutting depth is 3mm.Joint-cutting 303 is overlapped with the perpendicular bisector of the incidence surface perpendicular to photoconduction and exiting surface, joint-cutting 301 and joint-cutting
305 is symmetrical centered on perpendicular to the incidence surface of photoconduction and the perpendicular bisector of exiting surface, and joint-cutting 302 and joint-cutting 304 are with vertical
Symmetrical centered on the incidence surface of photoconduction and the perpendicular bisector of exiting surface, the joint-cutting deep equality of joint-cutting 301 and joint-cutting 305,
The joint-cutting deep equality of joint-cutting 302 and joint-cutting 304.Joint-cutting 301 is 24.6mm with the joint-cutting distance of joint-cutting 305, joint-cutting 302 with cut
The joint-cutting distance of seam 304 is 13.44mm.
Determine lancing parameter using light splitting ratio, lancing parameter can be calculated according to light splitting ratio, mould can also be adopted
The methods such as plan further adjust to calculated lancing parameter, obtain the lancing parameter optimizing.
Step 405：Using described lancing parameter, joint-cutting process is carried out to the photoconduction after surface treatment, and fill in joint-cutting
Default reflective medium, the visible ray that scintillation crystal is inspired is distinguished light splitting to detector by the photoconduction after making joint-cutting process
Multiple optical-electrical converters.
Using the lancing parameter determining, joint-cutting process is carried out to photoconduction, and fill default reflective medium in joint-cutting.
Wherein, described default reflective medium includes：Polytetrafluoroethylene (PTFE) reflectance coating, magnesia, titanium oxide, two component or barium sulfate.
Need exist for illustrate, reflective medium be not limited in the present embodiment to above-mentioned several reflective mediums, can also be plus
Strong minute surface reflective membrane（Enhanced Specular Reflector, ESR）Deng other reflective mediums, no longer repeat one by one here.
Carry out the photoconduction after joint-cutting process, the accurate light splitting of visible ray that can inspire scintillation crystal is to detector
Multiple optical-electrical converters.It is filled with reflective medium due in joint-cutting, after scintillation crystal incides photoconduction, incidence can be limited in
It is transmitted in the region that two joint-cuttings that position is located are limited, transmission in other regions will not be refracted or reflected；
And photoconduction can make the visible ray of output incide in the effective receiving zone domain of optical-electrical converter the light splitting of visible ray, reduce into
It is mapped to the visible ray on the wall of optical-electrical converter.Therefore, photoconduction will be seen that the accurate light splitting of light turns to the photoelectricity that should receive
Parallel operation.The ratio accuracy of the visible ray received by each optical-electrical converter improves, and can accurately determine that visible ray is dodging
Position produced by bright crystal, improve detector to the positioning precision meeting event.
Need exist for illustrating, step 403 and step 404 do not limit and have to hold after step 401 and step 402
Row, it is also possible to first carry out step 403 and step 404, determines lancing parameter, then execution step 401 and 402.
Embodiment three
Fig. 5 is a kind of preparation method embodiment three flow chart of photoconduction of the present invention, and embodiment three is compared with embodiment two, right
Photoconduction increases chamfered, and methods described includes：
Step 501：Determine the size of photoconduction incidence surface according to the exiting surface of scintillation crystal, according to all optical-electrical converters
Size that is incidence surface and determining photoconduction exiting surface.
The visible ray difference light splitting that described photoconduction is used for scintillation crystal in detector is inspired is many to detector
Individual optical-electrical converter.
Step 502：The all surface of the photoconduction determining after size is surface-treated.
Step 503：Determine the light splitting ratio of photoconduction using the refractive index of photoconduction and the reflectivity of default reflective medium.
Step 504：Determine the lancing parameter of photoconduction using described light splitting ratio.
Described lancing parameter includes the joint-cutting distance between joint-cutting depth and every two joint-cuttings.
Step 505：Using described lancing parameter, joint-cutting process is carried out to the photoconduction after surface treatment, and fill in joint-cutting
Default reflective medium.
Visible ray multiple light to detector for the light splitting respectively that scintillation crystal is inspired by the photoconduction after joint-cutting process
Electric transducer.
Step 501 is similar to step 405 with step 401 in embodiment two to step 505, retouching in reference implementation example two
State, repeat no more here.
Step 506：To appointing in the edge line of light guide side and four angles formed by photoconduction exiting surface after surface treatment
Meaning is one or more to carry out chamfered, and chamfered outer surface applies reflective medium.
Carry out visible reflectance that scintillation crystal edge inspired by the photoconduction after chamfered to optical-electrical converter institute
Receive.
Chamfered is carried out to the four edges edge line of light guide side and four angles formed by the exiting surface of photoconduction, using default
Chamfering parameter, described chamfering parameter includes chamfer angle and chamfering cambered surface.After photoconduction does chamfered, can will be transmitted to
The light of photoconduction corner reflexes to the effective receiving zone domain of optical-electrical converter, can improve effective reception of corner location visible ray,
Improve detection accuracy.The four edges edge line of light guide side becomes four angles with exiting surface, can be according to actual needs to therein
Meaning is one or more to carry out chamfered.Wherein, chamfering can be cone, triangle or circular arc.
Need exist for illustrating, step 506 is not limited only to execute after step 505, can also be after step 502
Any one step before execute.
As shown in the above, the present invention also has the advantages that：
The light that photoconduction after chamfered can will be transmitted to photoconduction corner reflexes to the effective receiving zone of optical-electrical converter
Domain, can improve effective reception of corner location visible ray, improve detection accuracy.
Example IV
Fig. 6 is a kind of preparation method example IV flow chart of photoconduction of the present invention, and example IV, compared with embodiment two, is adopted
Determine the lancing parameter of photoconduction with the method for simulation using described light splitting ratio, methods described includes：
Step 601：Determine the size of photoconduction incidence surface according to the exiting surface of scintillation crystal, according to all optical-electrical converters
Size that is incidence surface and determining photoconduction exiting surface.
Step 602：The all surface of the photoconduction determining after size is surface-treated.
Step 603：Determine the light splitting ratio of photoconduction using the refractive index of photoconduction and the reflectivity of default reflective medium.
Step 601 is similar with embodiment two to step 603, the description of reference implementation example two, repeats no more here.
Step 604：Scintillation crystal model, root are set up according to scintillation crystal size, crystal reflection rate and crystal refractive index
Set up photoconduction model according to the photoconduction after surface treatment.
Crystalline size according to actual scintillation crystal arranges the size of scintillation crystal model, according to selected by scintillation crystal
Material determine crystal reflection rate and crystal refractive index in scintillation crystal model.The chi of the photoconduction being determined according to step 601
The very little size determining photoconduction model, the material according to selected by photoconduction determines photoconduction refractive index and the photoconduction reflectivity of photoconduction model.
Determine the reflectivity of the photoconductive surface in photoconduction model to photoconduction according to the specific embodiment that step 602 is surface-treated.
Scintillation crystal model and photoconduction model are the physical models set up according to actual scintillation crystal and photoconduction.
One scintillation crystal array of scintillation crystal modeling, is made up of N × N number of lattice, wherein, N >=2.
Step 605：Calculate theoretical lancing parameter using light splitting ratio.
Described theory lancing parameter includes the theoretical joint-cutting distance between theoretical joint-cutting depth and the symmetrical joint-cutting of each two.
Theoretical joint-cutting depth refers to the depth according to the calculated joint-cutting of light splitting ratio in the transmission direction of light.Theoretical joint-cutting distance
Relative distance between referring to according to the calculated every two symmetrical joint-cuttings of light splitting ratio.
Light splitting ratio can calculate theoretical lancing parameter, carries out joint-cutting process according to theoretical lancing parameter to photoconduction, can
To improve effective reception to visible ray for the optical-electrical converter to a certain extent, improve the detection essence of detector within the specific limits
Degree.Accordingly, it would be desirable to be adjusted to theoretical lancing parameter according to the scintillation crystal model set up and photoconduction model.
Step 606：The theoretical lancing parameter of adjustment obtains multiple alternative lancing parameter, simulation setting different modulating lancing parameter
Photoconduction model visible ray that scintillation crystal model the is exported location drawing of scintillation crystal that carries out being obtained after light splitting.
Described adjustment theory lancing parameter obtains multiple alternative lancing parameter two kinds of possible embodiments：
The first possible embodiment, first adjusts theoretical joint-cutting depth, then adjusts theoretical joint-cutting distance：
The theoretical joint-cutting depth of adjustment obtains multiple alternative joint-cutting depth, the different alternative joint-cutting depth of simulation setting, same reason
The scintillation crystal carrying out by the visible ray that the photoconduction model of joint-cutting distance exports to scintillation crystal model being obtained after light splitting
The location drawing.
First adjust theoretical joint-cutting depth, theoretical joint-cutting apart from constant, when in the location drawing of the scintillation crystal simulating, two row
When the distance of lattice is closer, corresponding for two row lattices joint-cutting is adjusted shallow；Accordingly, two row lattices distant when, by two
The corresponding joint-cutting of row lattice is adjusted deep.
The position decoding precision obtaining the scintillation crystal location drawing is not less than alternative joint-cutting depth conduct during the second preset value
Joint-cutting depth.
The position decoding precision of the scintillation crystal location drawing is used for describing the definition of the scintillation crystal location drawing, and technical staff can
With according to actual conditions concrete setting the second predetermined threshold value, according to the high definition being actually needed the selection scintillation crystal location drawing
?.As Fig. 7（a）And Fig. 7（b）Shown, under different alternative joint-cutting depth the scintillation crystal location drawing, chooses Fig. 7（b）Alternative
Joint-cutting depth is as joint-cutting depth.
Adjustment theoretical joint-cutting distance obtains multiple alternative joint-cutting distances, and the different alternative joint-cutting distance of simulation setting, with all
The position of the scintillation crystal that the visible ray that the photoconduction model of seam depth exports to scintillation crystal model carries out being obtained after light splitting
Figure.
After determining joint-cutting depth, keep joint-cutting depth constant, the theoretical joint-cutting distance of adjustment, the distance of two row lattices compares
When near, the adjustment corresponding joint-cutting of two row lattices is away from the perpendicular bisector of photoconduction；Accordingly, two row lattices distant when, adjustment
The corresponding joint-cutting of two row lattices is near the perpendicular bisector of photoconduction.
The possible embodiment of second, first adjusts theoretical joint-cutting distance, then adjusts theoretical joint-cutting depth：
Adjustment theoretical joint-cutting distance obtains multiple alternative joint-cutting distances, the different alternative joint-cutting distance of simulation setting, same reason
The scintillation crystal carrying out by the visible ray that the photoconduction model of joint-cutting depth exports to scintillation crystal model being obtained after light splitting
The location drawing.
First adjust theoretical joint-cutting distance, keep theoretical joint-cutting depth constant, the method for adjustment embodiment party possible with the first
Formula is similar to, and repeats no more here.
The position decoding precision of the acquisition scintillation crystal location drawing is not less than alternative joint-cutting during three preset values apart from conduct
Joint-cutting distance.
The position decoding precision of the scintillation crystal location drawing is used for describing the definition of the scintillation crystal location drawing, and technical staff can
With according to actual conditions concrete setting the 3rd predetermined threshold value, according to the high definition being actually needed the selection scintillation crystal location drawing
?.As Fig. 8（a）And Fig. 8（b）Shown, different alternative joint-cuttings apart under the scintillation crystal location drawing, choose Fig. 8（b）Alternative
Joint-cutting distance is as joint-cutting distance.
The theoretical joint-cutting depth of adjustment obtains multiple alternative joint-cutting depth, and the different alternative joint-cutting depth of simulation setting, with all
The position of the scintillation crystal that the visible ray that the photoconduction model of seam distance exports to scintillation crystal model carries out being obtained after light splitting
Figure.
After determining joint-cutting distance, keep joint-cutting apart from constant, the theoretical joint-cutting depth of adjustment, method of adjustment can with the first
The embodiment of energy is similar to, and repeats no more here.
Step 607：The position decoding precision obtaining the scintillation crystal location drawing is not less than alternative joint-cutting during the first preset value
Parameter is as lancing parameter.
The position decoding precision of the scintillation crystal location drawing is used for describing the definition of the scintillation crystal location drawing, and technical staff can
With according to actual conditions concrete setting the first predetermined threshold value, according to the high definition being actually needed the selection scintillation crystal location drawing
, using the selected corresponding alternative lancing parameter of the scintillation crystal location drawing as lancing parameter.
Step 608：It is visible that the photoconduction model of simulation setting different modulating chamfering parameter exports to scintillation crystal model
The location drawing of the scintillation crystal that light is obtained after carrying out light splitting, described chamfering parameter includes angle and cambered surface, obtains scintillation crystal
The position decoding precision of the location drawing is not less than chamfering parameter during four preset values.
The position decoding precision of the scintillation crystal location drawing is used for describing the definition of the scintillation crystal location drawing, and technical staff can
With according to actual conditions concrete setting the 4th predetermined threshold value, according to the high definition being actually needed the selection scintillation crystal location drawing
, obtain the selected scintillation crystal location drawing corresponding chamfering parameter.As Fig. 9（a）And Fig. 9（b）Shown, different chamfering ginsengs
The scintillation crystal location drawing under several, chooses Fig. 9（b）Corresponding chamfering parameter.
Need exist for illustrating, step 603 to step 608 can also execute, no before step 601 or step 602
It is only limitted to execution after step 602, and, step 608 can execute before step 605, is not limited in step 607
Execute afterwards.Optionally, step 608 can also select not execute.
Step 609：Using described lancing parameter, joint-cutting process is carried out to the photoconduction after surface treatment, and fill in joint-cutting
Default reflective medium, the visible ray that scintillation crystal is inspired is distinguished light splitting to detector by the photoconduction after making joint-cutting process
Multiple optical-electrical converters.
Step 610：To appointing in the edge line of light guide side and four angles formed by photoconduction exiting surface after surface treatment
Chamfered is done using described chamfering parameter in one or more angles of anticipating, and chamfered outer surface applies reflective medium, after making chamfered
The visible reflectance that scintillation crystal edge is inspired is received by photoconduction to optical-electrical converter.
Step 609 is similar with embodiment one with step 610, the description of reference implementation example one, repeats no more here.
The order of step 609 and step 610 execution is not defined it is also possible to first carry out step 510, in execution step
609.
As shown in the above, the present invention also has the advantages that：
Determine lancing parameter and the chamfering parameter of photoconduction using the method for simulation, determine lancing parameter with experiment and fall
Angular dimensions is compared, and decreases the loss of experiment material, shortens the time of research and development photoconduction, improves the efficiency realizing photoconduction.
Embodiment five
Figure 10 is a kind of present invention radiation detector embodiment five structural representation, and described detector includes：
A kind of radiation detector is it is characterised in that described detector includes：
Scintillation crystal 1001, at least four optical-electrical converters 1002 and the embodiment of the present invention two are to described in example IV
The photoconduction 1003 of method preparation.
Described scintillation crystal 1001 by single bulky crystal or the crystal array that is made up of at least two fritter lattices,
Need to do encapsulation process by the crystal array that at least two fritter lattices form, the side of each fritter lattice needs to apply reflective Jie
Matter.Described scintillation crystal 1001 and photoconduction 1003 pass through optical coupled medium direct-coupling.
The incidence surface of described photoconduction 1003 is equivalently-sized with the exiting surface of described scintillation crystal 1001, described photoconduction 1003
Exiting surface and the incidence surface of described at least four optical-electrical converters 1002 and equivalently-sized, photoconduction is provided be filled with anti-
The joint-cutting 1004 of optical medium.The incidence surface of photoconduction 1003 and exiting surface are all quadrangles, and two faces are parallel to each other.
Described photoconduction 1003 passes through optical coupled medium direct-coupling with described at least four optical-electrical converters 1002.
Wherein, described couplant includes silicone oil or epoxy resin optics glue.Need exist for illustrating, couplant
Be not limited in the present embodiment to above-mentioned several couplants, can also be ultra-violet curing optics glue or Silica hydrogel etc. its
His couplant, no longer repeats here one by one.Couplant between scintillation crystal 1001 and photoconduction 1003 and photoconduction 1003
Couplant between optical-electrical converter can identical it is also possible to different.
Described scintillation crystal 1001 is used for inspiring visible ray, and by the visible light output inspiring to photoconduction 1003.
When the crystal array that scintillation crystal 1001 is N × N, each surface of each of scintillation crystal lattice is all entered
Row surface treatment, to avoid visible ray to be totally reflected in lattice, causes visible light loss.And, to each lattice can
See that each surface of optical transmission direction applies default reflective medium, to prevent the visible ray being transmitted in each lattice from producing string
Disturb, the light splitting precision of impact photoconduction.
The material of described scintillation crystal includes bismuth germanium oxide（BGO）, yttrium luetcium silicate（LYSO）, mix cerium silicic acid lutetium（LSO）, silicic acid
Gadolinium（GSO）, sodium iodide（NaI）Or（Barium fluoride）BaF2.Need exist for illustrating, on the material of scintillation crystal is not limited in
State several, cesium fluoride can also be adopted（CsF）Prepare scintillation crystal etc. other materials, no longer repeat one by one here.
The visible ray that described photoconduction 1003 is used for being inspired scintillation crystal 1001 distinguishes light splitting at least four photoelectricity
Converter 1002.
Described photoconduction 1003 be using embodiment one to the method described in embodiment three prepared by photoconduction, photoconduction 1003
On have and carry out the joint-cutting after joint-cutting process using lancing parameter, be filled with default reflective medium in joint-cutting.Each table of photoconduction
Face is surface-treated, and is totally reflected with avoiding visible ray to transmit in photoconduction, causes the loss of visible ray.Wherein, photoconduction
Joint-cutting in 1003, can first joint-cutting, then fill reflectorized material in joint-cutting；Can also be directly to adopt reflectorized material to photoconduction
Carry out joint-cutting process.
Wherein, photoconduction is at least divided into 9 pieces by joint-cutting, 1 center light guide block, 4 edge-light guide blocks and 4 corner photoconductions
Block, the size of center light guide block is more than the size of remaining 8 light guide block.The number of light guide block be less than crystal array in lattice
Number, and the size of each light guide block is more than the size of 1 lattice.
Optionally, in photoconduction 1003 side and four angles formed by exiting surface, therein any one or more using falling
Angular dimensions carries out chamfered, and chamfered outer surface scribbles default reflective medium.The shape of described chamfering includes cone, triangle
Shape or circular arc etc..
Wherein, the described material preparing photoconduction includes epoxy resin, acrylic resin, silica gel or polyurethane.Need exist for
Illustrate, the material preparing photoconduction is not limited in above-mentioned several material, glass or polymethyl-benzene olefin(e) acid first can also be adopted
The other materials such as ester prepare photoconduction, no longer repeat one by one here.
Wherein, described default reflective medium include polytetrafluoroethylene (PTFE) reflectance coating, magnesia, titanium oxide, two component or
Barium sulfate.Need exist for illustrate, reflective medium be not limited in the present embodiment to above-mentioned several reflective mediums, also may be used
To be to strengthen minute surface reflective membrane（Enhanced Specular Reflector, ESR）Deng other reflective mediums, not another here
One repeats.The default reflective medium filled in joint-cutting can identical it is also possible to different, specifically can be selected according to actual conditions
Select.
At least four optical-electrical converters 1002, for being converted into electric signal output by received visible ray.
Described optical-electrical converter 1002 includes photomultiplier or light emitting diode.Need exist for illustrating, photoelectricity turns
Parallel operation 1002 be not limited in the present embodiment to above-mentioned several optical-electrical converters, can also be other light such as semiconductor devices
Electric transducer, no longer repeats here one by one.
As shown in the above, radiation detector provided by the present invention has the advantages that：
In radiation detector provided by the present invention, the exiting surface of scintillation crystal is coupled with the incidence surface of photoconduction, photoconduction
Exiting surface is coupled with multiple optical-electrical converters, and the visible ray that scintillation crystal excites generation is carried out accurate light splitting by photoconduction, makes visible
Light incides as far as possible in the effective receiving zone domain of optical-electrical converter and is received, and decreases the wall being incident on optical-electrical converter
On visible ray, improve the detection accuracy of radiation detector.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Within god and principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.
Claims (8)
1. a kind of photoconduction for radiation detector is it is characterised in that described photoconduction includes:
Incidence surface is parallel with exiting surface, and described incidence surface is equal sized with the exiting surface of detector crystal array, described exiting surface
With the area of the multiple optical-electrical converter of detector and equal sized；
The all surface of photoconduction is all surface-treated, and photoconduction is provided with the multiple joint-cuttings being filled with default reflective medium, institute
State joint-cutting to be distributed with the perpendicular bisector of photoconduction incidence surface and exiting surface for axial symmetry, with perpendicular to the incidence surface of photoconduction and exiting surface
Centered on perpendicular bisector, the joint-cutting depth of two symmetrical joint-cuttings is identical, and the visible ray that scintillation crystal is inspired is divided by described joint-cutting
Multiple optical-electrical converters to detector for the other light splitting；
The edge line of light guide side is chamfering with any one or more angles in four angles formed by photoconduction exiting surface, outside chamfering
Surface scribbles default reflective medium, and the visible reflectance that scintillation crystal edge is inspired by described chamfering is to opto-electronic conversion
Device；
The depth of the joint-cutting overlapping with the perpendicular bisector of the incidence surface perpendicular to photoconduction and exiting surface is 0, near light guide side
Article four, the joint-cutting depth of joint-cutting is identical with the thickness of photoconduction, and photoconduction is cut into a center light guide block, four edge-light guide blocks
And four drift angle light guide blocks.
2. a kind of preparation method of photoconduction is it is characterised in that described photoconduction is used for scintillation crystal in detector is inspired
Visible ray multiple optical-electrical converters to detector for the light splitting respectively, methods described includes：
Determine the size of photoconduction incidence surface according to the exiting surface of scintillation crystal, the incidence surface according to all optical-electrical converters and true
Determine the size of photoconduction exiting surface；
The all surface of the photoconduction determining after size is surface-treated；
Determine the light splitting ratio of photoconduction using the refractive index of photoconduction and the reflectivity of default reflective medium；
Determine the lancing parameter of photoconduction using described light splitting ratio, described lancing parameter include joint-cutting depth and every two symmetrical
Joint-cutting distance between joint-cutting；
Using described lancing parameter, joint-cutting process is carried out to the photoconduction after surface treatment, and fill default reflective Jie in joint-cutting
Matter, multiple photoelectricity to detector for the light splitting turn the visible ray that scintillation crystal is inspired by the photoconduction after making joint-cutting process respectively
Parallel operation.
3. method according to claim 2 is it is characterised in that methods described also includes：
To any one or more in edge line and four angles formed by photoconduction exiting surface of the light guide side after surface treatment
Carry out chamfered, chamfered outer surface scribbles default reflective medium, make the photoconduction after chamfered by scintillation crystal edge institute
The visible reflectance inspiring is to optical-electrical converter.
4. method according to claim 3 is it is characterised in that described joined using the joint-cutting that described light splitting ratio determines photoconduction
Number includes：
Scintillation crystal model is set up according to the crystalline size of scintillation crystal, crystal reflection rate and crystal refractive index, according to surface
Photoconduction after process sets up photoconduction model；
Calculate theoretical lancing parameter using light splitting ratio, described theory lancing parameter includes theoretical joint-cutting depth and each two pair
Claim the theoretical joint-cutting distance between joint-cutting；
The theoretical lancing parameter of adjustment obtains multiple alternative lancing parameter, the photoconduction model pair of simulation setting different modulating lancing parameter
The location drawing of the scintillation crystal that the visible ray of scintillation crystal model output is obtained after carrying out light splitting；
The position decoding precision of the acquisition scintillation crystal location drawing is not less than alternative lancing parameter during the first preset value as joint-cutting
Parameter.
5. method according to claim 4 is it is characterised in that described adjustment theory lancing parameter obtains multiple alternative joint-cuttings
Parameter, the visible ray that the photoconduction model of simulation setting different modulating lancing parameter exports to scintillation crystal model is carried out after light splitting
The location drawing of the scintillation crystal being obtained includes：
The theoretical joint-cutting depth of adjustment obtains multiple alternative joint-cutting depth, the different alternative joint-cutting depth of simulation setting, and same theory is cut
The position of the scintillation crystal that the visible ray that the photoconduction model of seam distance exports to scintillation crystal model carries out being obtained after light splitting
Figure；
The position decoding precision of the acquisition scintillation crystal location drawing is not less than alternative joint-cutting depth during the second preset value as joint-cutting
Depth；
Adjustment theoretical joint-cutting distance obtains multiple alternative joint-cutting distances, the different alternative joint-cutting distance of simulation setting, and same joint-cutting is deep
The location drawing of the scintillation crystal that the visible ray that the photoconduction model of degree exports to scintillation crystal model carries out being obtained after light splitting.
6. method according to claim 4 is it is characterised in that described adjustment theory lancing parameter obtains multiple alternative joint-cuttings
Parameter, the visible ray that the photoconduction model of simulation setting different modulating lancing parameter exports to scintillation crystal model is carried out after light splitting
The location drawing of the scintillation crystal being obtained includes：
Adjustment theoretical joint-cutting distance obtains multiple alternative joint-cutting distances, the different alternative joint-cutting distance of simulation setting, and same theory is cut
The position of the scintillation crystal that the visible ray that the photoconduction model of seam depth exports to scintillation crystal model carries out being obtained after light splitting
Figure；
The position decoding precision of the acquisition scintillation crystal location drawing is not less than alternative joint-cutting distance during three preset values as joint-cutting
Distance；
The theoretical joint-cutting depth of adjustment obtains multiple alternative joint-cutting depth, the different alternative joint-cutting depth of simulation setting, same joint-cutting away from
From photoconduction model visible ray that scintillation crystal model the is exported location drawing of scintillation crystal that carries out being obtained after light splitting.
7. the method according to claim 4-6 any one is it is characterised in that methods described also includes：
The visible ray that the photoconduction model of simulation setting different modulating chamfering parameter exports to scintillation crystal model is carried out after light splitting
The location drawing of the scintillation crystal being obtained, described chamfering parameter includes angle and cambered surface；
The position decoding precision obtaining the scintillation crystal location drawing is not less than chamfering parameter during four preset values；
Then to any one in the edge line of light guide side and four angles formed by photoconduction exiting surface after surface treatment or many
Individual angle is done chamfered and is included：
To any one or more in edge line and four angles formed by photoconduction exiting surface of the light guide side after surface treatment
Chamfered is done using described chamfering parameter in angle.
8. a kind of radiation detector is it is characterised in that described detector includes：
Scintillation crystal, at least four optical-electrical converters and using the photoconduction described in claim 1；
Described scintillation crystal by single bulky crystal or the crystal array that is made up of at least two fritter lattices, described flicker
Crystal passes through optical coupled medium direct-coupling with photoconduction；
The incidence surface of described photoconduction is equivalently-sized with the exiting surface of described scintillation crystal, the exiting surface of described photoconduction with described at least
The sum of the incidence surface of four optical-electrical converters equivalently-sized, photoconduction is provided with the joint-cutting being filled with default reflective medium；
Described photoconduction passes through optical coupled medium direct-coupling with described at least four optical-electrical converters；
Described scintillation crystal is used for inspiring visible ray, and by the visible light output inspiring to photoconduction；
The visible ray that described photoconduction is used for being inspired scintillation crystal distinguishes light splitting at least four optical-electrical converters；
At least four optical-electrical converters, for being converted into electric signal output by received visible ray.
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| CN106501838B (en) * | 2015-09-08 | 2019-08-27 | 中国科学院高能物理研究所 | A kind of light guide of radiation detector and preparation method thereof, radiation detector |
| CN106646580A (en) * | 2016-10-29 | 2017-05-10 | 无锡通透光电科技有限公司 | High-cost-performance nuclear radiation detector based on SiPM and BGO |
| CN107167832A (en) | 2017-07-28 | 2017-09-15 | 苏州瑞派宁科技有限公司 | A kind of nuclear detector |
| CN108519616A (en) * | 2018-03-26 | 2018-09-11 | 重庆睿视兴科技有限公司 | A kind of scintillator design principle and method improving industry CT detectivity |
| CN110376634B (en) * | 2019-07-19 | 2023-10-31 | 沈阳智核医疗科技有限公司 | Detection unit for a PET detector and PET detector |
| CN113447975B (en) * | 2021-06-24 | 2022-05-24 | 明峰医疗系统股份有限公司 | Light sharing detection system and detection method based on silicon photomultiplier detector |
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