CN104048792B - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
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- CN104048792B CN104048792B CN201410039882.2A CN201410039882A CN104048792B CN 104048792 B CN104048792 B CN 104048792B CN 201410039882 A CN201410039882 A CN 201410039882A CN 104048792 B CN104048792 B CN 104048792B
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- battery plate
- pedestal
- semiconductor
- detecting device
- pressure
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- 239000012530 fluid Substances 0.000 claims description 17
- 230000002093 peripheral Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004378 air conditioning Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- -1 Diol ester Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229920001721 Polyimide Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000011528 polyamide (building material) Substances 0.000 description 2
- 230000003068 static Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000000108 ultra-filtration Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229920000069 poly(p-phenylene sulfide) Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
Abstract
A kind of pressure sensor (1,1001) is equipped with diaphragm (50,1050) on the pedestal (40,1040) being fixed in the cover (10,1010) and forms the pressurized space (52,1052) of enclosed oily substance.Semiconductor-type pressure-detecting device (60,1060) is connected using connecting line (80,1080,1081) with multiple terminal pins (70,1070).Battery plate (100,1100,1200) is removed around semiconductor-type pressure-detecting device (60,1060) or in a part for surrounding, it is connected using earthy connecting line (82) with ground terminal pin (72), or using soldering (1110) and ground terminal pin (1072) wiring, prevent the insulating properties dielectric charge in enclosed pressurized space (52,1052).
Description
Technical field
The present invention relates to a kind of pressure sensors with semiconductor-type pressure-detecting device.
Background technology
This pressure sensor examines refrigerant pressure on fridge-freezer or air-conditioning device for equipping
It surveys or equipment detects various Fluid pressures on industrial equipment.
The configuration of semiconductor-type pressure-detecting device is being divided by diaphragm and is being sealed in the compression chamber of oily substance, and having will
Pressure change in pressurized space is converted to electric signal and the function of being exported to outside.
Diaphragm is flexible metallic plate, and potential difference, enclosed oil are generated between semiconductor-type pressure detecting element
During class substance static electrification, semiconductor-type pressure detecting element generates unfavorable condition sometimes.
Therefore, electroconductive component is configured between semiconductor-type pressure detecting element and diaphragm, by by the electric conductivity
The zero potential of component and circuit connects to remove electricity, and this structure is disclosed in following patent documents.
Patent document 1：Japanese Patent Laid-Open 2003-302300 publications
The content of the invention
Problems to be solved by the invention
It is simpler except battery plate with structure it is an object of the present invention to provide a kind of press detection sensor, it is not necessary to
Expand the height dimension of pressurized space.
Means for solving the problems
(1) a kind of pressure sensor, has：Diaphragm, the diaphragm are subject to the pressure of fluid；Semiconductor-type pressure detecting fills
It puts, which has multiple connection gaskets comprising ground mat；Pedestal, the pedestal and the diaphragm it
Between form pressurized space, which is sealed with insulating properties medium, and the semiconductor-type pressure is set in the pressurized space
Force checking device；And erect multiple terminal pins and a ground terminal pin on the pedestal, the terminal pins with it is described
Semiconductor-type pressure-detecting device is electrically connected, and the zero potential of the ground terminal pin and circuit connects, the spy of the pressure sensor
Point is on the pedestal, to be set on the peripheral location of the semiconductor-type pressure-detecting device or a part for peripheral location
Have except battery plate, along from the short transverse that the pedestal originate from the diaphragm side during pedestal, it is described except battery plate quilt
Be configured to it is not Chong Die with the semiconductor-type pressure-detecting device, it is described except battery plate be configured to this except battery plate apart from the pedestal
Height it is identical with height of the semiconductor-type pressure-detecting device apart from the pedestal or be configured in than the semiconductor
The low position of formula pressure-detecting device, it is described except ground mat of the battery plate with the semiconductor-type pressure-detecting device and the ground connection
Terminal pins are electrically connected.
(2) pressure sensor as described in (1), its main feature is that, it is described except battery plate utilizes brazing mode and the ground terminal
Son pin electrical connection.
(3) a kind of pressure sensor, has：Diaphragm, the diaphragm are subject to the pressure of fluid；Pedestal, the pedestal with it is described
Pressurized space is formed between diaphragm, which is sealed with insulating properties medium, and semiconductor is provided in the pressurized space
Formula pressure-detecting device；And multiple terminal pins and ground terminal pin on the pedestal are erected, multiple terminal pins pass through company
Wiring is connected with the semiconductor-type pressure-detecting device, and the pressure detecting portion being made of the diaphragm and the pedestal is assembled into
The characteristics of one, the pressure sensor is on the pedestal, to be equipped with the semiconductor-type pressure-detecting device, Yi Jipei
Put on the semiconductor-type pressure-detecting device peripheral location or a peripheral location part except battery plate, along from the pedestal
The short transverse of starting from the diaphragm side during pedestal, it is described except battery plate be configured to not with the semiconductor-type pressure
Force checking device is overlapped, described except battery plate is configured to this except height of the battery plate apart from the pedestal, with the semiconductor-type pressure
Height of the force checking device apart from the pedestal is identical or configures in the position lower than the semiconductor-type pressure-detecting device,
It is described to remove battery plate, it is conducted by earthy connecting line and the ground terminal pin.
(4) pressure sensor as described in (3), its main feature is that, the other connections of line diameter ratio of the earthy connecting line
The line footpath of line is big.
(5) pressure sensor as described in (3), its main feature is that, the earthy connecting line is formed by more.
(6) pressure sensor as any one of (1) to (3), its main feature is that, the outline shape except battery plate is
Quadrangle, and central portion has fenestra.
(7) pressure sensor as any one of (1) to (3), its main feature is that, the outline shape except battery plate is
Octagon, and central portion has fenestra.
(8) pressure sensor as any one of (1) to (3), its main feature is that, the outline shape except battery plate is
Circle, and central portion has fenestra.
(9) pressure sensor as any one of (1) to (3), its main feature is that, in the part except battery plate
Equipped with slit.
The effect of invention
Structure using the present invention, it is possible to provide a kind of to have the high pressure of the reliability of abundant durability to electromagnetic noises such as electrostatic
Force snesor.
Description of the drawings
Fig. 1 is the sectional view of the pressure sensor of the present invention.
Fig. 2 is the top view of the pressure sensor major part of the present invention.
Fig. 3 is the enlarged plan view of the pressure sensor major part of the present invention.
Fig. 4 is the detailed enlarged cross-sectional view for representing semiconductor-type pressure detecting element and the major part except battery plate.
Fig. 5 is the definition graph for the 1st manufacturing process for representing the pressure sensor of the present invention, and (a) is sectional view, and (b) is to bow
View.
Fig. 6 is the definition graph for the 2nd manufacturing process for representing the pressure sensor of the present invention, and (a) is sectional view, and (b) is to bow
View.
Fig. 7 is the definition graph for the 3rd manufacturing process for representing the pressure sensor of the present invention, and (a) is sectional view, and (b) is to bow
View.
Fig. 8 is the top view for the 2nd implementation form for representing the pressure sensor of the present invention.
Fig. 9 is the top view for the 3rd implementation form for representing the pressure sensor of the present invention.
Figure 10 is the top view for the 4th implementation form for representing the pressure sensor of the present invention.
Figure 11 is the enlarged plan view of the major part for the 5th implementation form for representing the force snesor that the present invention presses.
Figure 12 is the longitudinal section view for the 6th implementation form for representing the pressure sensor of the present invention.
Figure 13 is the diagram of the major part for the 6th implementation form for representing the pressure sensor of the present invention, and (a) is to overlook
Figure, (b) is the A-A ' sectional views in (a).
Figure 14 is the diagram of the major part for the 7th implementation form for representing the pressure sensor of the present invention, and (a) is to overlook
Figure, (b) is the B-B ' sectional views in (a).
Symbol description
1st, 1001 pressure sensor
10th, 1010 the cover
20th, 1020 fluid introduction part
30th, 1030 installing component
32nd, 1032 fluids import room
40th, 1040 pedestal
50th, 1050 diaphragm
52nd, 1052 pressurized space
60th, 1060 semiconductor-type pressure-detecting device
62nd, 1062 glass pedestal
64th, 1064 detecting element
70th, 1070 terminal pins
72nd, 1072 ground terminal pin
74th, 1074 sealing element
80th, 1080,1081 connecting line
82nd, 1082 earthy connecting line
90th, 1090 Intermediate substrate
92nd, 1092 connector
94th, 1094 conducting wire
100th, 200,300,400,1100,1200 battery plate is removed
102nd, 202,302,402 fenestra
404 slits
1110th, 1210 soldering
Specific embodiment
Referring now to specification Fig. 1, Fig. 7, to illustrate the 1st implementation form of the present invention.
As shown in Figures 1 and 2, pressure sensor 1 has the cover 10 with stepped cylindrical shape, and big with the cover 10
Footpath opening portion is relatively equipped with fluid and flows into pipe 20.Pedestal 40, the peripheral part folder of diaphragm 50 are installed in the inside of the cover 10
Enter between pedestal 40 and installing component 30, the installing component 30 supports fluid and flows into pipe 20.
Insulating properties filled with oily substance etc. in the pressurized space 52 gone out in the pedestal 40 of plate-like with 50 zoning of diaphragm
Liquid medium.
The central portion of 52 side of pressurized space of pedestal 40 carries semiconductor-type pressure-detecting device 60.Pressure-detecting device 60
Including：The pedestal 62 of glass system and the pressure detecting element (semiconductor chip) 64 being attached on pedestal 62.
Around semiconductor-type pressure-detecting device 60, there are more terminal pins 70 of perforation pedestal 40.70 quilt of terminal pins
The insulation sealing of sealing element 74 is existed side by side on pedestal 40.
Also setting up has and 70 mutually isostructural ground terminal pin 72 of terminal pins.Terminal pins 70 and ground terminal pin 72 connect
In Intermediate substrate 90, it is connected with conducting wire 94 by connector 92 and is exported to outside.Semiconductor-type pressure-detecting device 60 and end
It is connected (wiring) with connecting line 80 between sub- pin 70.
The fluid that fluid is flowed into pipe 20 is imported to enter in fluid importing room 32, diaphragm 50 deforms due to its pressure, so as to
It pressurizes to the medium in pressurized space 52.
Semiconductor-type pressure detecting element 64 is detected the pressure oscillation and is converted to electric signal, passes through terminal pins 70
Electric signal is exported to outside.
The present invention pressure sensor 1 in, except battery plate 100 with surround the state of semiconductor-type pressure-detecting device 60 peace
On pedestal 40.
Outer shape shown in Fig. 2 except battery plate 100 is the flat shape with quadrangle, and being equipped with storage in inside partly leads
The fenestra 102 of body formula pressure-detecting device 60.
Also, it removes between battery plate 100 and ground terminal pin 72 with earthy 82 wiring of connecting line.
Ground terminal pin 72 is connected with the electric loop that current potential is zero, charged around semiconductor-type pressure-detecting device 60
Current potential, by except electricity, prevents the work caused by the static electrification of semiconductor-type pressure-detecting device 60 as a result, by removing battery plate 100
Unfavorable condition.
In this embodiment, using the earthy connecting line 82 larger compared to other 80 line footpaths of connecting line, thus
Electrical property is removed with higher.
As shown in the enlarged drawing of Fig. 3, Fig. 4, semiconductor-type pressure-detecting device 60 has a structure in which：In glass system
The upper surface of pedestal portion 62 is equipped with pressure detecting element 64, and semiconductor-type pressure-detecting device 60 utilizes adhesive layer 62a
And it is fixed on metal pedestal 40.
Except battery plate 100 is equipped with inorganic material or polyamide, polyimides, poly terephthalic acid second such as ceramics, glass
Diol ester (PET) etc. has the insulating layer of abundant heat resistance, has the structure for forming conductive layer 110 on the face of its one side, passes through
Adhesive layer 100a is fixed on pedestal 40.It is representative to have gold, copper, al and ni etc. as the material of conductive layer 110, in order to
Obtain higher voltage endurance, it is possible to use the high melting point material such as tungsten or molybdenum.
With 80 wiring of connecting line between semiconductor-type pressure-detecting device 60 (pressure detecting element 64) and terminal pins 70, remove
82 wiring of earthy connecting line of major diameter is used between the conductive layer 110 of battery plate 100 and ground terminal pin 72.
The plate equipped on pressure sensor 1 of the present invention is configured to except battery plate 100, compared with the table of fixed pedestal 40
The altitude datum position H in face0, except the surface level position H of battery plate 1002Than the glass system platform of semiconductor-type pressure-detecting device 60
The surface level position H of portions 621It is low.
As a result, the height dimension of pressurized space 52 is still made it is identical with previous pressure sensor in the state of, can
It is arranged except battery plate 100, it is not necessary to change the size of pressure sensor and can effectively play and the enclosed medium such as oily substance is removed
Electric effect.
The present invention is as described above, can effectively remove charged in pressurized space 52 and further reliably prevent semiconductor
The work unfavorable condition of formula pressure-detecting device 60.
In the following, the manufacturing process of pressure sensor of the present invention is illustrated.
Fig. 5 expressions make 52 lateral Shangdi of pressurized space set the pedestal 40 for being equipped with terminal pins 70 and ground terminal pin 72,
And the process of the central portion fixation semiconductor-type pressure-detecting device 60 in pedestal 40.
For the positioning of semiconductor-type pressure-detecting device 60, in this embodiment pedestal 40 central portion be equipped with it is recessed
Portion 42.Semiconductor-type pressure-detecting device 60 is fixed on using adhesive layer on pedestal 40.
Fig. 6 represents fixed except the process of battery plate 100 around semiconductor-type pressure-detecting device 60.
Except the central portion of battery plate 100 has fenestra 102, with the storage semiconductor-type pressure-detecting device in the fenestra 102
60 posture, by the upward state of conductive layer, will be fixed on except battery plate 100 with adhesive layer 100a on pedestal 40.
As shown in figure 4, the height and position H of 52 side of pressurized space except battery plate 1002Than the height position of glass system pedestal portion 62
Put H1It is low.
Fig. 7 is represented using connecting line 80 and earthy connecting line 82 to semiconductor-type pressure-detecting device 60 and terminal pins
70 and except between battery plate 100 and ground terminal pin 72 carry out wiring process.
Due to pressure detecting original paper 64 and except any part is not present in the space of 100 upside of battery plate, the wiring operation
Can easily it implement in the process identical with usual wire bonding.
Fig. 8 shows the 2nd implementation forms except battery plate.The implementation form except the outer shape of battery plate 200 is octagon, and
Central portion has fenestra 202.
Fig. 9 represents the 3rd implementation form except battery plate.The implementation form except the outer shape of battery plate 300 is circular, and in
Centre portion has fenestra 302.
Figure 10 represents the 4th implementation form except battery plate.The implementation form except battery plate 400 central portion have fenestra 402,
And a part is equipped with slit 404.The position of slit 404 is set in the diagonal position of ground terminal pin 72.
By setting slit 404, so as to obtain reliably except electro ultrafiltration.
Figure 11 represents the 5th implementation form of the present invention.
In this embodiment, earthy connecting line is formed with the connecting line 282 of more (this implementation form is three).
Each connecting line uses and other wiring identical line of connecting line 80, it is not necessary to prepare earthy special line.
Using the structure, also further can reliably carry out except electro ultrafiltration.Other structures are identical with previous implementation form.
1st~the 5th implementation form removes battery plate, and the height for leaving pedestal is configured to fill than semiconductor-type pressure detecting
Put leave pedestal height it is low, but can also be set into identical height.1st~the 5th implementation form removes battery plate, although setting
Into encirclement semiconductor-type pressure-detecting device, but as rectangle or circular except battery plate, it may be alternatively provided at semiconductor-type pressure detecting
In the transverse direction of device or a part (side) for surrounding.
In the pressure sensor of the present invention, due to around semiconductor-type pressure-detecting device or its side coil installs
Have except battery plate, it is therefore possible to prevent being influenced caused by the electromagnetic noises such as electrostatic in pressurized space, can improve as sensor
Reliability.
In addition, except battery plate 100 is according to the noise level of use environment, and can suitably choose whether to be arranged on pressurized space
It is interior.
By making except the height and position of battery plate is lower than the height and position of semiconductor-type pressure-detecting device, so as to damage
Simplify to the workability of wire bonding the manufacturing process of pressure sensor, size can also be kept into identical with previous.
Figure 12 and Figure 13 represents the 6th implementation form of the present invention.
As shown in FIG. 12 and 13, pressure sensor 1001 has with stepped columnar the cover 1010, in the cover
1010 major diameter opening portion is equipped with pressure sensing cell, which includes：It is equipped with aftermentioned semiconductor-type pressure
The pedestal 1040 of force checking device 1060；Pair flow into what the fluid introduction part 1020 that is connected of pipe was supported with fluid (not shown)
Installing component 1030；And diaphragm 1050 of the clamping of peripheral part mounted member 1030 etc..
In the pressurized space 1052 gone out in the pedestal 1040 by plate-like and 1050 zoning of diaphragm, the insulation such as filling oily substance
Property medium.The purposes of ball 1099 is that liquid medium is filled in compression sky in the hole 1099a by being formed on pedestal 1040
Between in 1052 after the hole given into sealing, and be fixed on the modes such as welding on pedestal 1040.
Central portion in 1052 side of pressurized space of pedestal 1040 carries semiconductor-type pressure-detecting device 1060.Pressure is examined
Surveying device 1060 includes：The pressure detecting element (semiconductor chip) 1064 of the pedestal 1062 and attaching of glass system on it.
Pressure detecting element 1064 has eight joint sheets (electrode) in this example, and three therein are the power inputs for exporting signal
Pad, ground mat and signal output pad, remaining five are signal adjustment pads.
There is the end of more (being eight in this example) of perforation pedestal 1040 around semiconductor-type pressure-detecting device 1060
Sub- pin 1070,1072.Terminal pins 1070,1072 are existed side by side using sealing element 1074 by insulation sealing to be located on pedestal 1040.
One in multiple terminal pins is ground terminal pin 1072.These seven terminal pins 1070 and a ground terminal pin
1072 are connected with Intermediate substrate 1090.In addition, three terminal pins being connected with power input pad, ground mat and signal output pad
1070th, 1072 it is connected by connector 1092 with conducting wire 1094.Conducting wire 1094 is with being arranged on equipped with the pressure sensor 1001
Circuit (not shown) connection in the control panels such as fridge-freezer or air-conditioning device.
Each connection gasket in addition to ground mat of semiconductor-type pressure-detecting device 1060 (pressure detecting element 1064) with
Terminal pins 1070 are connected (wiring) with connecting line 1080.In addition, ground mat connecting line 1081 connects with the aftermentioned battery plate 1100 that removes
It connects.
Above-mentioned pressure sensing cell is after configuring in the cover 1010, from the major diameter opening portion side of the cover 1010 and path
Resin P is filled and is solidificated in the inside of the cover 1010 by opening portion side (conducting wire 1094 is exported one side), thus pressure detecting list
Member is fixed in the cover 1010.
The fluid imported by fluid introduction part 1020 enters fluid and imports in room 1032, and diaphragm 1050 becomes due to its pressure
Shape, so as to pressurize to the medium in pressurized space 1052.
Semiconductor-type pressure detecting element 1064 is detected the pressure oscillation and is converted to electric signal, passes through terminal pins
1070 export electric signal to outside.
In the 6th implementation form, except battery plate 1100 to surround the state of semiconductor-type pressure-detecting device 1060 (half
Around conductor type pressure-detecting device 1060) it is attached to by bonding agent etc. on pedestal 1040.
Except the outer shape of battery plate 1100 is the flat shape with polygon, it is equipped in inside and surrounds semiconductor-type pressure
The fenestra 1102 of 1060 periphery of detection device and the hole portion 1102a inserted for ground terminal pin 1072.
In the state of being attached to except battery plate 1100 on pedestal 1040, the ground terminal pin 1072 of hole portion 1102a is inserted through
Top ends it is prominent slightly from the upper surface except battery plate 1100.Also, it removes and passes through between battery plate 1100 and ground terminal pin 1072
It is brazed 1110 and is electrically connected.
Due to will be combined using soldering 1110 except battery plate 1100 with ground terminal pin 1072, flat surface knot can be passed through
It closes.
Ground terminal pin 1072 is connected by conducting wire 1094 with the zero potential of circuit, and the circuit is located to be passed equipped with the pressure
In the control panel of the fridge-freezer of sensor 1001 or air-conditioning device etc., 1060 surrounding institute band of semiconductor-type pressure-detecting device
The current potential of electricity or the charged current potential of the liquid medium that is filled in pressurized space 1052, by removing battery plate 1100 by except electricity, by
This prevent because semiconductor-type pressure-detecting device 1060 it is charged caused by work it is bad.
Figure 14 is the diagram of the major part for the 7th implementation form for representing pressure sensor of the present invention, with Figure 12 and Figure 13
Identical symbol represents identical or equal part.
In the 7th implementation form shown in Figure 14, a part (side around semiconductor-type pressure-detecting device 1060
Face), except battery plate 1200 is attached to using bonding agent etc. on pedestal 1040.
Except the outer shape of battery plate 1200 has flat shape, with the encirclement semiconductor-type pressure-detecting device shown in Figure 14
1060 shape is different, configures in the side of the detection device 1060, compared to foregoing except battery plate 1100 is smaller.
This is also connected except battery plate 1200 using connecting line 1081 with the ground mat of semiconductor-type pressure-detecting device 1060, and
And except being electrically connected between battery plate 1200 and ground terminal pin 1072 by being brazed 1210, the ground terminal pin 1072 is inserted
It passes through and is located at this except the hole portion 1102a on battery plate 1200.
Since using being brazed 1210 pairs except battery plate 1200 is combined with ground terminal pin 1072, flat surface can be passed through
With reference to.
Ground terminal pin 1072 is connected by conducting wire 1094 with the zero potential of circuit, and the circuit is located to be passed equipped with the pressure
In the control panel of the fridge-freezer of sensor 1001 or air-conditioning device etc., 1060 surrounding institute band of semiconductor-type pressure-detecting device
The current potential of electricity or the charged current potential of the liquid medium that is filled in pressurized space 1052, by removing battery plate 1200 by except electricity, by
This prevent because semiconductor-type pressure-detecting device 1060 it is charged caused by work it is bad.
Except battery plate 1100,1200 is equipped with such as ceramics, inorganic material glass or polyamide, polyimides, poly- to benzene two
Formic acid glycol ester (PET), PPS etc. have the insulating layer of abundant heat resistance, have on the face of its one side and are formed with conductive layer
Structure is fixed on by adhesive layer on pedestal 1040.Conductive layer can be made of the plate of metal or also can by printing or
It fires and is formed.It is representative to have gold, copper, al and ni etc. as the material of conductive layer, in order to obtain higher voltage endurance
Property, it is possible to use the high melting point material such as tungsten or molybdenum.
In addition, except battery plate can also be not provided with insulating layer, and only formed with metallic plate.
Although the 6th~the 7th implementation form is formed as polygon except battery plate, also can be by itself and the 1st~the 3rd implementation form
It is identically formed as the rectangles such as quadrangle, octagon or circle.In addition, though removing for the 6th~the 7th implementation form is not set on battery plate
There is slit, but also can be uniformly set slit with the 4th implementation form.
The height for removing battery plate 1100,1200, leaving pedestal 1040 for the plate that the present invention the 6th, the 7th implementation form are equipped
Degree is set on the position identical or lower than it with the height for leaving pedestal 1040 of semiconductor-type pressure-detecting device 1060.It changes
Yan Zhi, except battery plate 1100,1200 is configured to, compared with the altitude datum position on the surface of fixed pedestal 1040, except battery plate
Surface level position is lower than the surface level position of the glass system pedestal portion 1062 of semiconductor-type pressure-detecting device 1060.
As a result, the height dimension of pressurized space 1052 is still made it is identical with previous pressure sensor in the state of,
Can be arranged except battery plate 1100,1200, it is not necessary to change the size of pressure sensor can effectively play it is enclosed to oily substance etc.
The electric removing effect of medium.
In addition, using said structure, when the connection gasket to pressure detecting element 1064 carries out wire bonding with terminal pins 1070
When, it except battery plate 1100,1200 will not counteract, will not decline its workability.
The present invention and further reliably prevents half as described above, can effectively remove charged in pressurized space 1052
The work of conductor type pressure-detecting device 1060 is bad.
In addition, except the height and position of battery plate 1100,1200 may be lower than the height and position of glass pedestal 1062.
It is electrically connected in addition, though removing between battery plate 1100,1200 and ground terminal pin 1072 by being brazed 1110, but
The present invention is not limited to this, and the modes such as riveting, crimping, press-in, welding or the bonding using conductive adhesive can also be used
And it is electrically connected.
Claims (13)
1. a kind of pressure sensor, has：
Diaphragm, the diaphragm are subject to the pressure of fluid；
Semiconductor-type pressure-detecting device, the semiconductor-type pressure-detecting device have multiple connection gaskets comprising ground mat；
Pedestal forms pressurized space between the pedestal and the diaphragm, which is sealed with insulating properties medium, described
The semiconductor-type pressure-detecting device is set in pressurized space；And
Erect multiple terminal pins and a ground terminal pin on the pedestal, the terminal pins and the semiconductor-type pressure
Detection device is electrically connected, and the zero potential of the ground terminal pin and circuit connects, which is characterized in that,
On the pedestal, it is equipped on the peripheral location of the semiconductor-type pressure-detecting device or a part for peripheral location
Except battery plate,
Along from the short transverse that the pedestal originates from the diaphragm side during pedestal, it is described except battery plate is configured to
It is Chong Die with the semiconductor-type pressure-detecting device,
It is described except battery plate be configured to this except height of the battery plate apart from the pedestal and the semiconductor-type pressure-detecting device away from
Height from the pedestal is identical or is configured in the position lower than the semiconductor-type pressure-detecting device,
It is described except battery plate is electrically connected with the ground mat of the semiconductor-type pressure-detecting device and the ground terminal pin.
2. pressure sensor as described in claim 1, which is characterized in that described except battery plate utilizes brazing mode and the ground connection
Terminal pins are electrically connected.
3. pressure sensor as claimed in claim 1 or 2, which is characterized in that the outline shape except battery plate is quadrangle,
And central portion has fenestra.
4. pressure sensor as claimed in claim 1 or 2, which is characterized in that the outline shape except battery plate is octagon,
And central portion has fenestra.
5. pressure sensor as claimed in claim 1 or 2, which is characterized in that the outline shape except battery plate is circular, and
Central portion has fenestra.
6. pressure sensor as claimed in claim 1 or 2, which is characterized in that be equipped in the part except battery plate narrow
Slot.
7. a kind of pressure sensor, has：
Diaphragm, the diaphragm are subject to the pressure of fluid；
Pedestal is formed with pressurized space between the pedestal and the diaphragm, which is sealed with insulating properties medium, in institute
It states and semiconductor-type pressure-detecting device is provided in pressurized space；And
Multiple terminal pins and ground terminal pin on the pedestal are erected, multiple terminal pins pass through connecting line and the semiconductor
Formula pressure-detecting device connects,
The pressure detecting portion assembling being made of the diaphragm and the pedestal is integral, which is characterized in that,
On the pedestal, it is equipped with the semiconductor-type pressure-detecting device and configuration is examined in the semiconductor-type pressure
Battery plate is removed on the survey peripheral location of device or a peripheral location part,
Along from the short transverse that the pedestal originates from the diaphragm side during pedestal, it is described except battery plate is configured to
It is Chong Die with the semiconductor-type pressure-detecting device,
It is described except battery plate be configured to this except height of the battery plate apart from the pedestal and the semiconductor-type pressure-detecting device away from
Height from the pedestal is identical or configures in the position lower than the semiconductor-type pressure-detecting device,
It is described to remove battery plate, it is conducted by earthy connecting line and the ground terminal pin.
8. pressure sensor as claimed in claim 7, which is characterized in that the line diameter ratio of the earthy connecting line is other even
The line footpath of wiring is big.
9. pressure sensor as claimed in claim 7, which is characterized in that the earthy connecting line is formed by more.
10. pressure sensor as claimed in claim 7, which is characterized in that the outline shape except battery plate is quadrangle, and
Central portion has fenestra.
11. pressure sensor as claimed in claim 7, which is characterized in that the outline shape except battery plate is octagon, and
Central portion has fenestra.
12. pressure sensor as claimed in claim 7, which is characterized in that the outline shape except battery plate is circular, and in
Centre portion has fenestra.
13. pressure sensor as claimed in claim 7, which is characterized in that slit is equipped in the part except battery plate.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-050489 | 2013-03-13 | ||
| JP2013050489A JP6205145B2 (en) | 2013-03-13 | 2013-03-13 | Pressure sensor |
| JP2013130154A JP6111151B2 (en) | 2013-06-21 | 2013-06-21 | Pressure sensor |
| JP2013-130154 | 2013-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104048792A CN104048792A (en) | 2014-09-17 |
| CN104048792B true CN104048792B (en) | 2018-06-01 |
Family
ID=
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|---|---|---|---|---|
| US6176137B1 (en) * | 1998-04-09 | 2001-01-23 | Fujikoki Corporation | Pressure sensor |
| US7231830B2 (en) * | 2004-09-24 | 2007-06-19 | Denso Corporation | Pressure sensor with processing circuit covered by sensor chip |
| CN101044382A (en) * | 2004-09-24 | 2007-09-26 | 格伦德福斯联合股份公司 | Pressure sensor |
| CN101253399A (en) * | 2005-08-16 | 2008-08-27 | 罗伯特·博世有限公司 | Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangement |
| CN102331322A (en) * | 2010-06-21 | 2012-01-25 | 罗伯特·博世有限公司 | Pressure sensor chip |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6176137B1 (en) * | 1998-04-09 | 2001-01-23 | Fujikoki Corporation | Pressure sensor |
| US7231830B2 (en) * | 2004-09-24 | 2007-06-19 | Denso Corporation | Pressure sensor with processing circuit covered by sensor chip |
| CN101044382A (en) * | 2004-09-24 | 2007-09-26 | 格伦德福斯联合股份公司 | Pressure sensor |
| CN101253399A (en) * | 2005-08-16 | 2008-08-27 | 罗伯特·博世有限公司 | Sensor arrangement comprising a substrate and a housing and method for producing a sensor arrangement |
| CN102331322A (en) * | 2010-06-21 | 2012-01-25 | 罗伯特·博世有限公司 | Pressure sensor chip |
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