CN104037270A - 适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法 - Google Patents
适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法 Download PDFInfo
- Publication number
- CN104037270A CN104037270A CN201310103785.0A CN201310103785A CN104037270A CN 104037270 A CN104037270 A CN 104037270A CN 201310103785 A CN201310103785 A CN 201310103785A CN 104037270 A CN104037270 A CN 104037270A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- photoresistance
- patterning
- sapphire
- lower floor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 119
- 239000010980 sapphire Substances 0.000 title claims abstract description 119
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000000059 patterning Methods 0.000 title claims description 55
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 4
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 230000008439 repair process Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Led Devices (AREA)
Abstract
本发明公开一种适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法。图案化的蓝宝石基板适用在作为发光元件的基板。蓝宝石基板结构包括光阻层、光阻下层及蓝宝石基板。光阻层为均质层,其材质为G线光阻、I线光阻、248nm DUV光阻或193nm Arf光阻,且具有平坦表面。光阻下层为均质层,其材质为有机化合物或无机化合物,且具有平坦表面。蓝宝石基板为使用长晶技术所形成,光阻层及光阻下层为使用涂布技术所形成。在蓝宝石基板结构形成后,依序通过曝光/显影程序、蚀刻程序及清除程序使蓝宝石基板结构逐步转换成为图案化蓝宝石基板。
Description
技术领域
本发明涉及一种适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法,特别是涉及一种可用以产生优良发光元件基板的适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法。
背景技术
现代发光元件,利用光电效应原理,通过激发的电子与电洞的结合,将电能转换为光的形式,进行量产时使用半导体制程,现代发光元件中最为普遍应用的为发光二极管。发光二极管具有元件寿命长、冷光发光、低耗电量、反应速度快及无需暖灯时间等等优点,且通过半导体制程,使其还具有体积小、坚固耐冲击及容易大量生产等优点,更可根据应用需求而制成阵列或是及小型光学元件。
近年来能源价格高涨,追求节能减碳成为全球趋势,为进一步提升发光二极管的应用范围,如何以较低的能源消耗达成较高的发光效率成为学术界及产业界不约而同的研究发展目标。理论上,当电子与电洞结合而发散的光线可以全部辐射至外界,达到100%的发光效率,但是在实际的情况下,发光二极管元件内部的结构及材质会造成各种光线传递的损耗,因而降低光线传递到外界的发光效率。
为提升发光二极管的发光效率,图案化技术已经被应用在蓝宝石基材,例如图1所显示的发光二极管基板100是一种蓝宝石基材110,在蓝宝石基材的表面130配置许多底部150为三角形的三角锥体结构120,以散射由发光二极管内部发出的光线,避免全反射发生,并增加光线穿透出发光二极管 表面的机率。为了增加发光效率,三角锥体结构104以最密集的方式组成。其他型式的图案化或是角锥体设计也逐渐被提出。
然而,使用半导体制程技术以产生包含多个锥体的图案时,由于单层光阻层的材料特性,在进行蚀刻时难以精确控制蓝宝石基板上个别锥体的高度及直径大小,造成锥体高度及直径均匀度不佳,以致于无法达成优选的发光元件出光效率。
发明内容
鉴于上述现有技术的问题,本发明的目的在于提供一种适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法,以解决蓝宝石基板上个别锥体的高度及直径大小均匀度不佳的问题。
为此,本发明提出一种适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法。本发明提出的蓝宝石基板结构包含蓝宝石基板,覆盖在蓝宝石基板上的光阻下层,以及覆盖在光阻下层上的光阻层。光阻层用于在经过曝光/显影程序后对光阻下层及蓝宝石基板进行蚀刻程序。
进一步地,本发明提出的蓝宝石基板结构的半径优选为2英寸、4英寸、6英寸、8英寸或12英寸。
进一步地,根据本发明提出的蓝宝石基板结构,其中光阻下层为均质层,且具有平坦表面。
更进一步,根据本发明提出的蓝宝石基板结构,其中光阻下层的材质为有机化合物或无机化合物。
进一步地,根据本发明提出的蓝宝石基板结构,其中光阻层为均质层,且具有平坦表面。
更进一步,根据本发明提出的蓝宝石基板结构,其中光阻层的材质为G线光阻(G-line photoresist)、I线光阻(I-line photoresist)、248nm DUV光阻或193nm Arf光阻。
根据本发明的另一目的,提出一种图案化蓝宝石基板的形成方法,适用于产生发光元件的基板。图案化蓝宝石基板的形成方法包含下列步骤:使用长晶技术形成蓝宝石基板;使用涂布技术形成光阻下层,光阻下层覆盖在蓝宝石基板上;使用涂布技术形成光阻层,光阻层覆盖在光阻下层上。
更进一步,图案化蓝宝石基板的形成方法还包含下列步骤:通过曝光/显影程序在光阻层产生光阻图案。
更进一步,图案化蓝宝石基板的形成方法还包含下列步骤:通过光阻图案及蚀刻程序,对光阻下层及蓝宝石基板产生光阻下层图案及初步图案化蓝宝石基板。
更进一步,图案化蓝宝石基板的形成方法还包含下列步骤:进行清除程序,以移除光阻图案及光阻下层图案以及修整初步图案化蓝宝石基板,以产生图案化的蓝宝石基板。
综上所述,根据本发明的适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法,可以具有一个或多个下述优点:
(1)此蓝宝石基板结构中的光阻下层具有平坦化及较高的耐蚀刻性质。
(2)此蓝宝石基板结构在使用半导体制程技术以产生多个锥体的图案时,可获得较好的锥体均匀性。
为使审查员对本发明的技术特征及有益效果有更进一步的了解与认识,下面以优选实施例及配合进行详细说明。
附图说明
图1为现有技术的一种发光二极管基板的立体示意图;
图2为本发明的蓝宝石基板结构的实施例的侧视示意图;
图3为本发明的图案化蓝宝石基板的形成方法的实施例的流程图;
图4为本发明的图案化蓝宝石基板的形成方法的曝光/显影程序的实施例的侧视示意图;
图5为本发明的图案化蓝宝石基板的形成方法的蚀刻程序的实施例的侧视示意图;以及
图6为本发明的图案化蓝宝石基板的形成方法的清除程序的实施例的侧视示意图。
【符号说明】
100:发光二极管基板
110:蓝宝石基材
120:三角锥体
130:表面
150:底部
200:蓝宝石基板结构
210:光阻层
210a:光阻图案
220:光阻下层
220a:光阻下层图案
230:蓝宝石基板
230a:初步图案化蓝宝石基板
230b:图案化的蓝宝石基板
240:锥体
S10~S15:步骤
具体实施方式
为使本发明的上述目的、特征和优点能更明显易懂,下文依本发明的适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法,特举优选实施例,并配合附图,作详细说明如下,其中相同的元件将以相同的元件符号 加以说明。
本发明揭露一种适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法,适用在改善现有的图案化蓝宝石基板上锥体高度及直径均匀度不佳的问题。本发明提出的蓝宝石基板结构包含蓝宝石基板,覆盖在蓝宝石基板上的光阻下层,以及覆盖在光阻下层上的光阻层。在蓝宝石基板结构形成后,依序通过曝光/显影程序、蚀刻程序及清除程序使蓝宝石基板结构逐步转换成为具有多个锥体的图案化蓝宝石基板,锥体的设计可以增加发光元件内部产生的光线透射至外界的效率,并且能够适当增加蓝宝石基材表面的面积,以降低后续发光元件长晶的难度。此外,本发明提出的蓝宝石基板结构包含覆盖在蓝宝石基板上方的一层光阻下层,可改善多个锥体高度及直径大小的均匀度,以增加发光元件的出光率。本发明的适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法可应用在多种发光元件,例如发光二极管。
请参阅图2,图2为本发明的蓝宝石基板结构的实施例的侧视示意图。图2的蓝宝石基板结构200包括蓝宝石基板230,覆盖在蓝宝石基板230上的光阻下层220,以及覆盖在光阻下层220上的光阻层210。光阻层210用以在经过曝光/显影程序后对光阻下层220及蓝宝石基板230进行蚀刻程序。本发明提出的蓝宝石基板结构的半径优选为2英寸、4英寸、6英寸、8英寸或12英寸。
进一步地,根据本发明的蓝宝石基板结构200,其中光阻下层220为均质层,且具有平坦表面。
更进一步,根据本发明提出的蓝宝石基板结构200,其中光阻下层220的材质为有机化合物或无机化合物。
进一步地,根据本发明提出蓝宝石基板结构200,其中光阻层210为均质层,且具有平坦表面。
更进一步,根据本发明提出的蓝宝石基板结构200,其中光阻层210的 材质为G线光阻(G-line photoresist)、I线光阻(I-line photoresist)、248nm DUV光阻或193nm Arf光阻。
请参阅图3,图3为本发明的图案化蓝宝石基板的形成方法的实施例的流程图。图3的步骤流程为:S10:使用长晶技术形成蓝宝石基板;S11:使用涂布技术形成光阻下层,光阻下层覆盖在蓝宝石基板上;S12:使用涂布技术形成光阻层,光阻层覆盖在光阻下层上;S13:通过曝光/显影程序在光阻层产生光阻图案;S14:通过光阻图案及蚀刻程序,对光阻下层及蓝宝石基板产生光阻下层图案及初步图案化蓝宝石基板;S15:进行清除程序,以移除光阻层及光阻下层以及修整初步图案化蓝宝石基板,以产生图案化的蓝宝石基板。
请参阅图4,图4为本发明的图案化蓝宝石基板的形成方法的曝光/显影程序的实施例的侧视示意图。在图4中,光阻层210的图案区域范围在进行曝光后进行显影而在光阻层210形成光阻图案210a。
请参阅图5,图5为本发明的图案化蓝宝石基板的形成方法的蚀刻程序的实施例的侧视示意图。在图5中,光阻图案210a作为蚀刻屏蔽蚀刻光阻下层220,以所得到的光阻下层图案220a作为蚀刻屏蔽蚀刻蓝板石基板230,以形成初步图案化蓝宝石基板230。
请参阅图6,图6为本发明的图案化蓝宝石基板的形成方法的清除程序的实施例的侧视示意图。图5中显示在进行清除程序后,光阻图案210a及光阻下层图案220a已经移除,初步图案化蓝宝石基板230a在经过修整之后形成多个锥体240,以产生最终的图案化蓝宝石基板230b。
以上所述仅为举例,而非为限制。任何未脱离本发明的精神与范畴,而对其进行的等效修改或变更,均应包含在所附的权利要求的范围中。
Claims (10)
1.一种适用在图案化的蓝宝石基板结构,其特征在于,包含:
蓝宝石基板;
光阻下层,覆盖在所述蓝宝石基板上;以及
光阻层,覆盖在所述光阻下层上,所述光阻层用于在经过曝光/显影程序后对所述光阻下层及所述蓝宝石基板进行蚀刻程序。
2.如权利要求1所述的蓝宝石基板结构,其特征在于,所述蓝宝石基板结构的半径为2英寸、4英寸、6英寸、8英寸或12英寸。
3.如权利要求1所述的蓝宝石基板结构,其特征在于,所述光阻下层为均质层,且具有平坦表面。
4.如权利要求3所述的蓝宝石基板结构,其特征在于,所述光阻下层的材质为有机化合物或无机化合物。
5.如权利要求1所述的蓝宝石基板结构,其特征在于,所述光阻层为均质层,且具有平坦表面。
6.如权利要求5所述的蓝宝石基板结构,其特征在于,所述光阻层的材质为G线光阻、I线光阻、248nm DUV光阻或193nm Arf光阻。
7.一种图案化蓝宝石基板的形成方法,其特征在于,包括下列步骤:
使用长晶技术形成蓝宝石基板;
使用涂布技术形成光阻下层,所述光阻下层覆盖在所述蓝宝石基板上;以及
使用涂布技术形成光阻层,所述光阻层覆盖在所述光阻下层上。
8.如权利要求7所述的图案化蓝宝石基板的形成方法,其特征在于,还包含下列步骤:
通过曝光/显影程序在所述光阻层产生光阻图案。
9.如权利要求8所述的图案化蓝宝石基板的形成方法,其特征在于,还包含下列步骤:
通过所述光阻图案及蚀刻程序,对所述光阻下层及所述蓝宝石基板产生光阻下层图案及初步图案化蓝宝石基板。
10.如权利要求9所述的图案化蓝宝石基板的形成方法,其特征在于,还包含下列步骤:
进行清除程序,以移除所述光阻图案及所述光阻下层图案以及修整所述初步图案化蓝宝石基板,以产生图案化的蓝宝石基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102107725 | 2013-03-05 | ||
TW102107725A TW201436284A (zh) | 2013-03-05 | 2013-03-05 | 適用於圖案化之藍寶石基板結構及圖案化藍寶石基板形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104037270A true CN104037270A (zh) | 2014-09-10 |
Family
ID=51467969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310103785.0A Pending CN104037270A (zh) | 2013-03-05 | 2013-03-28 | 适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20140255640A1 (zh) |
CN (1) | CN104037270A (zh) |
TW (1) | TW201436284A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104332534A (zh) * | 2014-10-14 | 2015-02-04 | 厦门润晶光电有限公司 | 将图案化蓝宝石衬底不良品重制的方法 |
CN106002632A (zh) * | 2016-07-20 | 2016-10-12 | 厦门润晶光电集团有限公司 | 化学机械研磨抛光垫修整器 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106601601B (zh) * | 2017-02-06 | 2023-11-17 | 福建中晶科技有限公司 | 一种图形化蓝宝石衬底的光刻方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6048664A (en) * | 1999-03-12 | 2000-04-11 | Lucent Technologies, Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
-
2013
- 2013-03-05 TW TW102107725A patent/TW201436284A/zh unknown
- 2013-03-28 CN CN201310103785.0A patent/CN104037270A/zh active Pending
- 2013-06-04 US US13/909,694 patent/US20140255640A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104332534A (zh) * | 2014-10-14 | 2015-02-04 | 厦门润晶光电有限公司 | 将图案化蓝宝石衬底不良品重制的方法 |
CN106002632A (zh) * | 2016-07-20 | 2016-10-12 | 厦门润晶光电集团有限公司 | 化学机械研磨抛光垫修整器 |
Also Published As
Publication number | Publication date |
---|---|
US20140255640A1 (en) | 2014-09-11 |
TW201436284A (zh) | 2014-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8367446B2 (en) | Method for preparing patterned substrate by using nano- or micro- particles | |
CN101515625B (zh) | 发光二极管芯片衬底结构的制备方法 | |
TW200511893A (en) | Method of manufacturing organic electroluminescent display device and organic electroluminescent display device, and display device equipped with organic electroluminescent display device | |
CN102810611A (zh) | 具有透光锥的磊晶基板、发光二极管,及其制作方法 | |
EP2882267A3 (en) | Wiring substrate, light emitting device, and manufacturing method of wiring substrate | |
CN103227249B (zh) | 一种双层纳米图形化led的制备工艺方法 | |
CN203800068U (zh) | 图形化衬底以及倒装led芯片 | |
CN109904285B (zh) | 一种发光二极管芯片及其制造方法 | |
CN104037270A (zh) | 适用在图案化的蓝宝石基板结构及图案化蓝宝石基板的形成方法 | |
CN101567415B (zh) | 发光二极管芯片衬底结构的制备方法 | |
WO2016176941A1 (zh) | 有机电致发光器件及其制备方法 | |
CN101867001B (zh) | 自对准工艺制作凸形图形衬底的方法 | |
CN103840038A (zh) | 实现增强led样品光提取效率的三维类球形结构及制备方法 | |
JP2006100684A (ja) | 発光素子の製造方法 | |
CN205452333U (zh) | 一种led灯的弧形六角星锥图形化蓝宝石衬底 | |
WO2019148581A1 (zh) | 一种柔性led器件及其制备方法 | |
CN204966528U (zh) | 一种微纳米图形化蓝宝石衬底 | |
CN103107252A (zh) | 在AlGaInP基LED的GaP表面制备类球形结构的方法 | |
CN103137815A (zh) | 新型pss基版结构及其制作方法 | |
TW201248915A (en) | Light-emitting diode of high light-extraction efficiency and its preparation method | |
CN203103350U (zh) | 一种带荧光粉层的白光led器件 | |
CN101515626B (zh) | 发光二极管芯片衬底结构的制造方法 | |
CN204696144U (zh) | 一种用于倒装led芯片的衬底 | |
TWI514621B (zh) | 發光二極體結構 | |
CN102867901A (zh) | 一种带荧光粉层的白光led器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140910 |
|
WD01 | Invention patent application deemed withdrawn after publication |