CN104035089A - Optical aliasing prevention traceable fine measurement tape semiconductor laser ranging device and method - Google Patents
Optical aliasing prevention traceable fine measurement tape semiconductor laser ranging device and method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
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Abstract
An optical aliasing prevention traceable fine measurement tape semiconductor laser ranging device and method belongs to the phase laser ranging technology. The device comprises a measuring tape generating unit, a laser frequency shift unit, an aliasing prevention measuring light path and a phase measuring unit. The method comprises the following steps of, firstly, starting a frequency reference laser device and a semiconductor laser device; secondly, taking one beam as a reference laser beam, and taking the other beam as a measuring laser beam; thirdly, taking c/Iv2-v3I as a fine measurement tape; fourthly, taking c/Iv4-v2I as a rough measurement tape; fifthly, moving a measuring pyramid prism to a target end to obtain the phase differences of (i) phi (/i) 1 and (i) phi (/i) 2 of the fine measurement tape and the rough measurement tape; lastly, obtaining a measured distance value through formulas. The optical aliasing prevention traceable fine measurement tape semiconductor laser ranging device and method solves the problems that superlong wavelengths and ultrashort wavelengths cannot be generated synchronously and laser tapes are incapable of performing direct tracing and have nonlinear periodic errors and frequency aliasing, and has the advantages of being high in measuring range, measuring precision, stability and practicality.
Description
Technical field
The invention belongs to phase place laser measuring technique, relate generally to a kind of phase laser distance apparatus and method.
Background technology
Large-scale metrology receives much concern in the large-scale optical, mechanical and electronic integration equipment processing and manufacturings such as the machine-building of development large-scale precision, great scientific and technological engineering, aerospace industry, shipping industry and microelectronics equipment industry, wherein several meters of large-scale metrologies to hundreds of rice scope are large parts processing and the whole important foundations of assembling in aerospace vehicle and jumbo ship, the quality of its measuring method and equipment performance directly affects workpiece quality and assembly precision, and then running quality, performance and the life-span of a whole set of equipment of impact.The chi phase ranging methods of surveying utilize one group of survey chi wavelength from big to small to the measurement of refining step by step of tested distance more, solve conflicting between measurement range and measuring accuracy, can in hundreds of meters of overlength operating distances, reach submillimeter to micron-sized static measurement precision.
, survey in chi phase laser distance technology more, although the mode that many survey chis are measured has step by step been taken into account the demand of measurement range and measuring accuracy, but the restriction due to light source technology, bigness scale chi and accurate measurement chi can not produce the line phase of going forward side by side simultaneously and measure, caused Measuring Time long, the problem that measurement result real-time is poor, on the other hand due to take in surveying chi phase laser distance technology survey chi wavelength size and measure as benchmark, survey the stability of chi wavelength and the precision that accuracy directly affects laser ranging, therefore how to obtain bigness scale chi and the accurate measurement chi wavelength that high stability can be traced to the source, and make it to participate in measuring is to improve at present the subject matter of surveying chi phase laser distance precision and real-time more simultaneously.
Long distance even over distance measure under background, the output power of light source is one of important aspect, known by existing LASER Light Source is analyzed, more conventional light source is gas laser, semiconductor laser, solid state laser and dye laser at present.Wherein gas laser is simple in structure, good beam quality, but its output power is limited simultaneously, document [Zeng Ming, fourth Venus, Yuan Xiaodong. improve the research of frequency-stabilized He-Ne laser output power. Acta Optica .1996.1] mention conventional He-Ne laser instrument peak power output also only in 5 milliwatts, can not meet the needs of long range measurements.And semiconductor laser is a kind of high-level efficiency, broadband, is convenient to the laser instrument of modulation, its peak power output is far longer than gas laser, and simple in structure, meets demand for development and the trend of over distance range finding.
In absolute distance measurement, another key point is to survey stability and the tractability of chi, it is relevant with light source technology, by known to the analysis of the light source technology of phase laser distance method laser, the modulation means of phase method has directly modulation of electric current, optical modulation and intermode beat frequency modulation system etc. both at home and abroad at present.
Direct current modulation method is utilized semiconductor laser, and light intensity curent change and the feature that changes comes the output intensity of noise spectra of semiconductor lasers to modulate has the advantages such as the modulation of being simple and easy to.Document [Siyuan Liu, Jiubin Tan and Binke Hou. Multicycle Synchronous Digital Phase Measurement Used to Further Improve Phase-Shift Laser Range Finding.
meas. Sci. Technol.2007, 18:1756 – 1762] and patent [the large range high precision fast laser ranging apparatus and method of multiple frequency synchronous modulation, publication number: CN1825138] all set forth a kind of current modulating method of based semiconductor laser instrument, it adopts the synthetic composite signal of multiple frequency synchronous to carry out synchronous modulation to laser output power, realized at synchronization and obtained in multifrequency modulation range finding each modulation frequency for the measurement result of tested distance, but in order to obtain linear modulation, make the straight line portion of working point in output characteristic curve, must when adding modulation signal electric current, add a suitable bias current makes its output signal undistorted, the introducing of direct current biasing has strengthened power consumption, when working long hours, temperature raises, can affect the stability of Output optical power, cause modulation waveform distortion, and the increase along with modulating frequency, depth of modulation can reduce, cause modulation waveform distortion, can not carry out high frequency modulated, size and the degree of stability of accurate measurement chi wavelength have been limited, on the other hand in the actual application of large-scale metrology, laser easily causes the loss of laser power in long Distance Transmission process, cause the impact on modulation waveform, and then accuracy and the degree of stability of impact survey chi, its frequency stability of surveying chi is generally less than 10
-7.
Utilize light modulating method to be mainly acoustooptic modulation method and electro-optic modulation method, its modulation band-width is subject to the multifactorial impact of laser beam diameter etc., also can bring waveform distortion, particularly just even more serious when high frequency (Gigahertz), therefore it forms large survey chi, and measuring accuracy is difficult to improve owing to being subject to the restriction of maximum modulation frequency.
Utilize laser instrument different mode to export formed beat signal as the method for surveying chi, be called intermode modulation.The chamber long correlation of the modulation band-width of the method and laser instrument, He-Ne laser frequency stabilization technology is ripe, its frequency stability is high, the degree of stability of the survey chi being obtained by it is high, patent [high precision multiple frequency synchronous phase laser distance apparatus and method, publication number: CN 102419166] and patent [the multiple frequency synchronous phase laser distance apparatus and method based on dual-acousto-optic shift, publication number: CN 102305591A] all utilized the intermode modulation of He-Ne laser instrument and in conjunction with acousto-optic frequency translation technology, high-precision accurate measurement chi and bigness scale chi have been obtained, but the survey chi that the method produces does not possess tractability, when it is measured, absolute measuring chi length needs another detection system to provide, increased the complicacy of measuring, on the other hand, this method of utilizing process of heterodyning to obtain accurate measurement chi phase place, the frequency of its processing signals is higher, can follow-up phase measurement difficulty and measuring accuracy be affected, and supposes that phase-measurement accuracy is 0.05
o, range measurement accuracy will reach 1um-10um, and signal frequency is at least 2GHz-20GHz, far beyond the bandwidth of signal processing circuit.
Patent [superheterodyne device and method of reseptance and receiving trap SIC (semiconductor integrated circuit), publication number: CN102484492A] all introduced a kind of superhet interference signal treatment technology, Zhang Cunman [the Zhang Cunman etc. of Tsing-Hua University, superhet is interfered absolute distance measurement Review Study, optical technology 1998, (1): 7-9.] introduced superhet absolute distance measurement method, the method has reduced the processing frequency of signal, more easily reaches higher measuring accuracy.But this technology has three improved aspects of needs: the first, and this technology can only obtain one and survey chi, and does not possess tractability, can not carry out the chis of surveying more and measure, let alone survey the synchronism of chi more; The second, it is less that superhet obtains surveying chi wavelength, generally in micron dimension, and can only be for the measurement of the micro-shape in surface.The 3rd, owing to using multi-frequency measurement and traditional anti-aliasing optical path with polarization spectroscope, inevitably produce non-linear cycle error and frequency alias, the measuring accuracy of phase place is impacted.
In order to improve the stability of laser instrument output frequency, occurred usining that the Output of laser frequency of iodine saturated absorption frequency stabilization laser instrument, as the frequency-stabilizing method of frequency stabilization benchmark, utilizes the saturated absorption spectra of iodine to carry out rrequency-offset-lock control to He-Ne laser instrument and semiconductor laser.China is also studied, such as patent ZL200910072518.5 and patent ZL200910072519.X etc., a kind of rrequency-offset-lock device that utilizes iodine saturated absorption He-Ne frequency stabilized laser has all been described, make the laser output frequency after rrequency-offset-lock there is very high frequency stability, have advantages of that output frequency can trace to the source, but the output frequency of laser reaches 10
14hz, corresponding survey chi is between 400-700nm, and measurement range, in nm rank, can not be found range for long distance laser, needs badly a kind ofly high frequency stability laser frequency is converted to the laser ranging on a large scale that can trace to the source surveys chi, and synchronizes them the technology of generation.
In sum, in laser ranging field, existing three problems needs to solve, and first, the synchronous generation of overlength wavelength and ultrashort wavelength, make it to take into account measuring accuracy and measurement range, the second, high precision can be traced to the source and be surveyed the generation of chi, to improve the accuracy of surveying chi wavelength, and reduce and measure the step that wavelength needs other system to provide, the 3rd, reduce the impact on measuring accuracy of non-linear cycle error and frequency alias.The present invention is directed to these three problems proposes a solution.
Summary of the invention
The object of the invention is in order to solve can not synchronously producing of the overlength wavelength that exists and ultrashort wavelength in existing phase laser distance technology, Laser Measuring chi is not directly traced to the source and the problem of non-linear cycle error and frequency alias, a kind of traced to the source accurate measurement chi semiconductor laser range apparatus and method of anti-optics aliasing are provided, reach the object of increase range finding dirigibility, simplification range finding step, raising measurement efficiency, precision and real-time.
The object of the present invention is achieved like this:
A kind of traced to the source accurate measurement chi semiconductor laser range device of anti-optics aliasing, it is characterized in that: described device forms by surveying chi generation unit, laser shift frequency unit, anti-aliasing optical path and phase measurement unit, wherein survey Laser output that chi generation unit sends to the input end of laser shift frequency unit, the output beam of laser shift frequency unit and output to anti-aliasing optical path, the output signal I of anti-aliasing optical path
3, I
4, I
5, I
6be input to respectively phase measurement unit;
The structure of described survey chi generation unit is: the laser beam of frequency reference laser instrument transmitting arrives the input end of optical splitter, first output terminal of optical splitter connects a semiconductor laser input end, a semiconductor laser output terminal connects the input end of a polaroid, second output terminal of described optical splitter connects No. two semiconductor laser input ends, the output terminal of No. two semiconductor lasers connects the input end of No. two polaroids, and an output terminal of frequency stabilized semiconductor laser connects the input end of No. three polaroids;
The structure of described laser shift frequency unit is: the input end of a half-wave plate connects the output terminal of a polaroid, the output terminal of a half-wave plate connects the input end of a polarization spectroscope, an output terminal of a polarization spectroscope connects the input end of a catoptron, another output terminal of a polarization spectroscope connects an input end of laser splicer, the output terminal of a catoptron connects an input end of a laser frequency shifter, the output terminal of a DDS signal source connects another input end of a laser frequency shifter, the output terminal of a laser frequency shifter connects an input end of laser splicer, spectroscopical input end connects the output terminal of No. two polaroids, a spectroscopical output terminal connects the input end of No. two catoptrons, spectroscopical another output terminal connects an input end of laser splicer, the output terminal of No. two catoptrons connects an input end of No. two laser frequency shifters, another input end of No. two laser frequency shifters connects the output terminal of No. two DDS signal sources, the output terminal of No. two laser frequency shifters connects an input end of laser splicer, an input end of No. three described laser frequency shifters connects the output terminal of No. three polaroids, another input end of No. three laser frequency shifters connects the output terminal of No. three DDS signal sources, the output terminal of No. three laser frequency shifters connects an input end of laser splicer, laser splicer output reference laser light beam and measuring laser beam,
The structure of described anti-aliasing optical path is: No. two spectroscopes of reference laser light beam directive, through No. two spectroscope reflections, enter prism of corner cube and form laser beam a, through No. two spectroscope transmissions, enter reference prism and form laser beam b, laser beam a reflects back into spectroscope No. two by a bugle cone prism, through No. two spectroscope transmissions, form laser beam c again, reflect to form laser beam d, laser beam b reflects back into spectroscope No. two by reference prism, through No. two spectroscope transmissions, form laser beam e again, reflect to form laser beam f, described No. two spectroscopes of measuring laser beam directive, through No. two spectroscope transmissions, enter measuring prism and form laser beam g, reflection enters a bugle cone prism and forms laser beam h, laser beam f enters spectroscope No. two through measuring prism reflection, through No. two spectroscope transmissions, form laser beam j again, reflect to form laser beam i, laser beam h enters spectroscope No. two through a bugle cone prism reflection, through No. two spectroscope transmissions, form laser beam l again, reflect to form laser beam k, described laser beam c overlaps with laser beam i, and through No. four polaroids, enter the input end of a photelectric receiver, described laser beam d overlaps with laser beam j, and through No. five polaroids, enter the input end of No. two photelectric receivers, described laser beam e overlaps with laser beam k, and through No. six polaroids, enter the input end of No. three photelectric receivers, described laser beam f overlaps with laser beam l, and through No. seven polaroids, enter the input end of No. four photelectric receivers,
The structure of described phase measurement unit is: the output terminal of a photelectric receiver and No. four photelectric receivers is connected with the input end of No. two low-pass filters with a low-pass filter respectively, the defeated output terminal of a low-pass filter and No. two low-pass filters is connected with the input end that is connected frequency mixer, the output terminal of frequency mixer connects the input end of phase measurement meter, No. two photelectric receiver is connected with the input end of No. four low-pass filters with No. three low-pass filters respectively with No. four photelectric receivers, the output terminal of No. three low-pass filters and No. four low-pass filters is connected with the input end of phase measurement meter.
A traced to the source accurate measurement chi He-Ne laser distance measurement method for anti-optics aliasing as claimed in claim 1, is characterized in that: concrete steps are as follows:
Step 1, open frequency benchmark laser, frequency stabilized semiconductor laser, a semiconductor laser and No. two semiconductor lasers, after through preheating and frequency stabilization, the laser that frequency stabilized semiconductor laser output frequency is stable
,within a semiconductor laser and No. two semiconductor lasers are locked in the certain frequency scope of frequency reference laser instrument by FEEDBACK CONTROL by output frequency, the laser sending from frequency stabilized semiconductor laser after polaroid only surplus frequency be
v 1horizontal polarization direction laser, the rrequency-offset-lock laser sending from semiconductor laser after polaroid only surplus frequency be
v 2horizontal polarization direction laser, the rrequency-offset-lock laser that No. two semiconductor lasers send remaining frequency after polaroid is
v 3vertical polarization laser;
Step 2, by the formed three beams of laser of step 1, enter laser shift frequency unit, its medium frequency is
v 2laser beam, after half-wave plate and a polarization spectroscope, separate the two mutually perpendicular laser in bundle polarization direction, wherein a road is through laser frequency shifter, by DDS signal source driving laser frequency shifter, shift frequency frequency is
f 1, another road is shift frequency not, and frequency is
v 3laser after spectroscope, be also divided into two-way one tunnel through laser frequency shifter, shift frequency frequency is
f 2, frequency is
v 1laser, through No. three laser frequency shifters, carry out shift frequency, shift frequency frequency is
f 4, obtain frequency and be
v 4 =v 1 + f 4laser, the laser of last various frequencies has five kinds of frequencies, is respectively
v 2,
v 3,
v 4,
v 2+
f 1with
v 3+
f 2, through the part of laser splicer, close light, by frequency, be
v 2+
f 1with
v 3+
f 2laser synthetic a branch of, form reference laser light beam, frequency is
v 2,
v 3,
v 4the synthetic measuring laser beam of laser, and shine respectively anti-aliasing optical path;
Step 3, reference laser light beam are divided into laser beam a and laser beam b through No. two spectroscopes, measuring laser beam is divided into laser beam g and laser beam h through No. two spectroscopes, laser beam b and laser beam h are respectively after a bugle cone prism and reference prism reflection, a bit joining on No. two spectroscope light splitting surfaces forms two beam interferometer light beams, wherein light beam through polarization direction with
v 4become 45 No. six polaroids of spending to enter No. three photodetectors and carry out opto-electronic conversion, then by the electric signal that obtains after No. four low-pass filters comprising accurate measurement chi signal phase information, its frequency is
f 1-
f 2, corresponding survey chi length is
, another light beam through polarization direction with
v 4after No. seven identical polaroids, obtain frequency and be
v 4,
v 2the laser of horizontal polarization direction, then enter into No. four photodetectors and carry out opto-electronic conversion, the frequency of the electric signal obtaining its output electrical signals after No. two low-pass filters is
v 4-
v 2, corresponding survey chi length is
;
When step 4, measurement start, reference prism maintains static, traverse measurement prism is to destination end, measuring distance is L, laser beam g is after measuring prism reflection, at No. two spectroscopical another some places, converge formation interfering beam with laser beam a, then form two beam interferometer laser through spectroscope light splitting, wherein a branch of through polarization direction with
v 4become 45 No. five polaroids of spending to enter No. two photodetectors and carry out opto-electronic conversion, then by the electric signal that obtains after No. three low-pass filters comprising accurate measurement chi signal phase information, its frequency is
f 1-
f 2, corresponding survey chi length is
, another light beam through polarization direction with
v 4after No. four identical polaroids, obtain frequency and be
v 4,
v 2the laser of horizontal polarization direction, then enter into a photelectric receiver and carry out opto-electronic conversion, the frequency of the electric signal obtaining its output electrical signals after a low-pass filter is
v 4-
v 2, corresponding survey chi length is
;
Step 5, by frequency, be
v 4-
v 2two signals access frequency mixer, reduce the frequency of two signals, then send into phase measurement meter, obtain the phase differential of two frequencies
Φ 1, by frequency, be
f 1-
f 2electric signal send into phase measurement meter and survey phase, obtain the phase differential of two signals
Φ 2, according to formula
try to achieve the distance measure of bigness scale chi
l c , and its substitution formula is tried to achieve to the phase place round values of accurate measurement chi
; Wherein
floor(
x) function returns
xthe integral part of value, finally according to formula, try to achieve tested distance value:
, in formula: c is the light velocity, the air refraction that n is environment.
Feature of the present invention and beneficial effect are:
First, the present invention proposes a kind of traced to the source accurate measurement chi production method and device of based semiconductor laser instrument, these apparatus and method utilize frequency reference type iodine stabilized laser to carry out rrequency-offset-lock control to the laser of two semiconductor laser outputs, and utilize two laser after frequency stabilization to form laser ranging accurate measurement chi with superhet form, make accurate measurement chi wavelength can directly be traceable to frequency/wavelength benchmark laser, and can adjust according to actual needs lock point, and then accurate measurement chi wavelength is regulated, increased the dirigibility of range finding, overcome and in existing distance measuring equipment, surveyed the shortcoming that chi is not directly traced to the source, simplify general distance measuring equipment and when absolute measuring is long, surveyed the step that chi wavelength needs another detection system to provide, improved measurement efficiency and precision, this is that the present invention distinguishes one of innovative point of existing apparatus.
The second, the present invention proposes a kind of many surveys chi phase-locking acquisition methods and device of being combined with superhet based on heterodyne.These apparatus and method utilize laser frequency shifter to carry out shift frequency to the laser of component frequency, produce the laser of multi-frequency, and utilize heterodyne approach and superhet method to obtain respectively bigness scale chi and accurate measurement chi simultaneously, and then make it to participate in to measure simultaneously, realized the synchro measure of thick accurate measurement chi phase place, shorten Measuring Time, improved the real-time of measurement result.The laser interferometry combining with superhet by heterodyne obtains test phase signal, eliminate common mode interference, improved the degree of stability of surveying chi, reduced the frequency of phase measuring circuit reception signal simultaneously, reduce the difficulty of circuit design, this is two of the present invention's innovative point of distinguishing existing apparatus.
The 3rd, the semiconductor laser of the present invention's employing based on rrequency-offset-lock is as surveying chi generation light source, make semiconductor laser Frequency Locking on iodine frequency stabilization absorption peak, have advantages of that frequency stability is high, and semiconductor laser light resource Output of laser energy is large, light echo energy is strong, signal to noise ratio (S/N ratio) is higher, more be conducive to the measurement of long distance, overcome to a certain extent the light echo energy that general gas flow laser instrument causes because light energy output is faint faint, signal to noise ratio (S/N ratio) is low, the problem that even causes system normally to work.This is three of the present invention's innovative point of distinguishing existing apparatus.
The 4th, the present invention the anti-aliasing interference technique of a kind of multi-frequency and device proposed.In these apparatus and method, reference light and measurement light reach anti-aliasing optical path through different paths, in interference mirror group in anti-aliasing optical path, reference light and measurement light carry out the measurement of twice interference realization to tested distance through different paths, because two light beams are without aliasing, elimination is due to optical device or light source polarization direction is undesirable produces that polarized light is revealed and aliasing, thereby in principle, has avoided non-linear cycle error and frequency alias error.This is four of the present invention's innovative point of distinguishing existing apparatus.
Accompanying drawing explanation
Fig. 1 is the general structure schematic diagram of laser ranging system of the present invention;
Fig. 2 is for surveying the structural representation of chi generation unit;
Fig. 3 is the structural representation of laser shift frequency unit;
Fig. 4 is reference signal beam interference schematic diagram;
Fig. 5 is measuring-signal beam interference schematic diagram;
Fig. 6 is anti-aliasing optical path structural representation;
Fig. 7 is phase measurement cellular construction schematic diagram
Piece number explanation in figure: 1, survey chi generation unit, 2, laser shift frequency unit, 3, anti-aliasing optical path, 4, phase measurement unit, 5, frequency reference laser instrument, 6, optical splitter, 7, a semiconductor laser, 8, a polaroid, 9, No. two semiconductor lasers, 10, No. two polaroids, 11, frequency stabilized semiconductor laser, 12, No. three polaroids, 13, a half-wave plate, 14, a polarization spectroscope, 15, a catoptron, 16, a laser frequency shifter, 17, a DDS signal source, 18, spectroscope, 19, No. two catoptrons, 20, No. two laser frequency shifters, 21, No. two DDS signal sources, 22, No. three laser frequency shifters, 23, No. three DDS signal sources, 24, laser splicer, 25, reference laser light beam, 26, measuring laser beam, 27, No. two spectroscopes, 28, prism of corner cube, 29, measuring prism, 30, reference prism, 31, a photelectric receiver, 32, No. four polaroids, 33, No. five polaroids, 34, No. two photelectric receivers, 35, No. six polaroids, 36, No. three photelectric receivers, 37, No. seven polaroids, 38, No. four photelectric receivers, 39, a low-pass filter, 40, No. two low-pass filters, 41, No. three low-pass filters, 42, No. four low-pass filters, 43, frequency mixer, 44, phase measurement meter.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present invention is described in detail.
A kind of traced to the source accurate measurement chi semiconductor laser range device of anti-optics aliasing, it is characterized in that: described device forms by surveying chi generation unit 1, laser shift frequency unit 2, anti-aliasing optical path 3 and phase measurement unit 4, wherein survey Laser output that chi generation unit 1 sends to the input end of laser shift frequency unit 2, output reference laser light beam 25 and the measuring laser beam 26 of laser shift frequency unit 2 output to anti-aliasing optical path 3, the output signal I of anti-aliasing optical path 3
3, I
4, I
5, I
6be input to respectively phase measurement unit 4;
The structure of described survey chi generation unit 1 is: the laser beam of frequency reference laser instrument 5 transmittings arrives the input end of optical splitter 6, first output terminal of optical splitter 6 connects semiconductor laser 7 input ends, semiconductor laser 7 output terminals connect the input end of a polaroid 8, second output terminal of described optical splitter 6 connects No. two semiconductor laser 9 input ends, the output terminal of No. two semiconductor lasers 9 connects the input end of No. two polaroids 10, and an output terminal of frequency stabilized semiconductor laser 11 connects the input end of No. three polaroids 12;
The structure of described laser shift frequency unit 2 is: the input end of a half-wave plate 13 connects the output terminal of a polaroid 8, the output terminal of a half-wave plate 13 connects the input end of a polarization spectroscope 14, an output terminal of a polarization spectroscope 14 connects the input end of a catoptron 15, another output terminal of a polarization spectroscope 14 connects an input end of laser splicer 24, the output terminal of a catoptron 15 connects an input end of a laser frequency shifter 16, the output terminal of a DDS signal source 17 connects another input end of a laser frequency shifter 16, the output terminal of a laser frequency shifter 16 connects an input end of laser splicer 24, the input end of spectroscope 18 connects the output terminal of No. two polaroids 10, an output terminal of spectroscope 18 connects the input end of No. two catoptrons 19, another output terminal of spectroscope 18 connects an input end of laser splicer 24, the output terminal of No. two catoptrons 19 connects an input end of No. two laser frequency shifters 20, another input end of No. two laser frequency shifters 20 connects the output terminal of No. two DDS signal sources 21, the output terminal of No. two laser frequency shifters 20 connects an input end of laser splicer 24, an input end of No. three described laser frequency shifters 22 connects the output terminal of No. three polaroids 12, another input end of No. three laser frequency shifters 22 connects the output terminal of No. three DDS signal sources 23, the output terminal of No. three laser frequency shifters 22 connects an input end of laser splicer 24, laser splicer 24 output reference laser light beam 25 and measuring laser beam 26,
The structure of described anti-aliasing optical path 3 is: No. two spectroscopes 27 of reference laser light beam 25 directive, through No. two spectroscope 27 reflections, enter prism of corner cube 28 and form laser beam a 25-1, through No. two spectroscope 27 transmissions, enter reference prism 30 and form laser beam b 25-2, laser beam a 25-1 reflects back into spectroscope 27 No. two by a bugle cone prism 28, through No. two spectroscope 27 transmissions, form laser beam c 25-3 again, reflect to form laser beam d25-4, laser beam b 25-2 reflects back into spectroscope 27 No. two by reference prism 30, through No. two spectroscope 27 transmissions, form laser beam e 25-5 again, reflect to form laser beam f 25-6, described No. two spectroscopes 27 of measuring laser beam 26 directive, through No. two spectroscope 27 transmissions, enter measuring prism 29 and form laser beam g 26-1, reflection enters a bugle cone prism 28 and forms laser beam h 26-2, laser beam f 26-1 enters spectroscope 27 No. two through measuring prism 29 reflections, through No. two spectroscope 27 transmissions, form laser beam j26-4 again, reflect to form laser beam I 26-3, laser beam h 26-2 enters spectroscope 27 No. two through bugle cone prism 28 reflections, through No. two spectroscope 27 transmissions, form laser beam l 26-6 again, reflect to form laser beam k 26-5, described laser beam c 25-3 overlaps with laser beam I 26-3, and through No. four polaroids 32, enter the input end of a photelectric receiver 31, described laser beam d 25-4 overlaps with laser beam j 26-4, and through No. five polaroids 33, enter the input end of No. two photelectric receivers 34, described laser beam e 25-5), overlap with laser beam k 26-5, and through No. six polaroids 35, enter the input end of No. three photelectric receivers 36, described laser beam f 25-6 overlaps with laser beam l 26-6, and through No. seven polaroids 37, enter the input end of No. four photelectric receivers 38,
The structure of described phase measurement unit 4 is: the output terminal of a photelectric receiver 31 and No. four photelectric receivers 38 is connected with the input end of No. two low-pass filters 40 with a low-pass filter 39 respectively, the defeated output terminal of a low-pass filter 39 and No. two low-pass filters 40 is connected with the input end that is connected frequency mixer 43, the output terminal of frequency mixer 43 connects the input end of phase measurement meter 44, No. two photelectric receiver 34 is connected with the input end of No. four low-pass filters 42 with No. three low-pass filters 41 respectively with No. four photelectric receivers 38, the output terminal of No. three low-pass filters 42 and No. four low-pass filters 42 is connected with the input end of phase measurement meter 44.
One, two, No. three laser frequency shifter 16,20,22 of described laser shift frequency unit 2 comprises acousto-optic frequency shifters, electro-optic frequency translation device, and travel frequency can regulate.
In described survey chi generation unit 1, one, No. two semiconductor laser 7,9 is the rrequency-offset-lock laser instrument based on frequency reference laser instrument, and frequency stabilized semiconductor laser 11 is common frequency stabilized laser.
Described survey chi generation unit 1 medium frequency benchmark laser 5 comprises iodine stabilized laser, femtosecond laser frequency comb laser instrument, and frequency stability is better than 10
-12.
A traced to the source accurate measurement chi He-Ne laser distance measurement method for anti-optics aliasing, is characterized in that: concrete steps are as follows:
Step 1, open frequency benchmark laser 5, frequency stabilized semiconductor laser 11, semiconductor laser 7 and No. two semiconductor lasers 9, after through preheating and frequency stabilization, the laser that frequency stabilized semiconductor laser 11 output frequencies are stable
,within a semiconductor laser 7 and No. two semiconductor lasers 9 are locked in the certain frequency scope of frequency reference laser instrument 5 by FEEDBACK CONTROL by output frequency, the laser sending from frequency stabilized semiconductor laser 11 after polaroid only surplus frequency be
v 1horizontal polarization direction laser, the rrequency-offset-lock laser sending from semiconductor laser 7 after polaroid only surplus frequency be
v 2horizontal polarization direction laser, the rrequency-offset-lock laser that No. two semiconductor lasers 9 send remaining frequency after polaroid is
v 3vertical polarization laser;
Step 2, by the formed three beams of laser of step 1, enter laser shift frequency unit 2, its medium frequency is
v 2laser beam, after half-wave plate and a polarization spectroscope 14, separate the two mutually perpendicular laser in bundle polarization direction, wherein a road is through laser frequency shifter, by DDS signal source driving laser frequency shifter, shift frequency frequency is
f 1, another road is shift frequency not, and frequency is
v 3laser after spectroscope, be also divided into two-way one tunnel through laser frequency shifter, shift frequency frequency is
f 2, frequency is
v 1laser, through No. three laser frequency shifters, carry out shift frequency, shift frequency frequency is
f 4, obtain frequency and be
v 4 =v 1 + f 4laser, the laser of last various frequencies has five kinds of frequencies, is respectively
v 2,
v 3,
v 4,
v 2+
f 1with
v 3+
f 2, through the part of laser splicer 24, close light, by frequency, be
v 2+
f 1with
v 3+
f 2laser synthetic a branch of, form reference laser light beam 25, frequency is
v 2,
v 3,
v 4the synthetic measuring laser beam 26 of laser, and shine respectively anti-aliasing optical path;
Step 3, reference laser light beam 25 are divided into laser beam a 25-1 and laser beam b 25-2 through No. two spectroscopes 27, measuring laser beam 26 is divided into laser beam g 26-1 and laser beam h 26-2 through No. two spectroscopes 27, laser beam b 25-2 and laser beam h 26-2 are respectively after a bugle cone prism 28 and reference prism 30 reflections, a bit joining on No. two spectroscope 27 light splitting surfaces forms two beam interferometer light beams, wherein light beam through polarization direction with
v 4become 45 No. six polaroids 35 of spending to enter No. three photodetectors 36 and carry out opto-electronic conversion, then by the electric signal that obtains after No. four low-pass filters 42 comprising accurate measurement chi signal phase information, its frequency is
f 1-
f 2, corresponding survey chi length is
, another light beam through polarization direction with
v 4 after No. seven identical polaroids 37, obtain frequency and be
v 4,
v 2the laser of horizontal polarization direction, then enter into No. four photodetectors 38 and carry out opto-electronic conversion, the frequency of the electric signal obtaining its output electrical signals after No. two low-pass filters is
v 4-
v 2, corresponding survey chi length is
;
When step 4, measurement start, reference prism 30 maintains static, traverse measurement prism 29 is to destination end, measuring distance is L, laser beam g 26-1 is after measuring prism 29 reflections, at another some place of No. two spectroscopes 27, converge formation interfering beam with laser beam a 25-1, then form two beam interferometer laser through spectroscope light splitting, wherein a branch of through polarization direction with
v 4become 45 No. five polaroids 33 of spending to enter No. two photodetectors 34 and carry out opto-electronic conversion, then by the electric signal that obtains after No. three low-pass filters 41 comprising accurate measurement chi signal phase information, its frequency is
f 1-
f 2, corresponding survey chi length is
, another light beam through polarization direction with
v 4 after No. four identical polaroids 32, obtain frequency and be
v 4,
v 2the laser of horizontal polarization direction, then enter into a photelectric receiver 31 and carry out opto-electronic conversion, the frequency of the electric signal obtaining its output electrical signals after a low-pass filter 29 is
v 4-
v 2, corresponding survey chi length is
;
Step 5, by frequency, be
v 4-
v 2two signals access frequency mixer 43, reduce the frequency of two signals, then send into phase measurement meter 44, obtain the phase differential of two frequencies
Φ 1, by frequency, be
f 1-
f 2electric signal send into phase measurement meter 44 and survey phase, obtain the phase differential of two signals
Φ 2, according to formula
try to achieve the distance measure of bigness scale chi
l c , and its substitution formula is tried to achieve to the phase place round values of accurate measurement chi
; Wherein
floor(
x) function returns
xthe integral part of value, finally according to formula, try to achieve tested distance value:
, in formula: c is the light velocity, the air refraction that n is environment.
Described two path signal phase differential
Φ 1with phase differential
Φ 2measurement at synchronization, carry out.
Described laser frequency
v 2with
v 3can trace to the source to iodine frequency stabilization frequency reference source, the accurate measurement chi forming
can trace to the source.
Claims (7)
1. the traced to the source accurate measurement chi semiconductor laser range device of an anti-optics aliasing, it is characterized in that: described device forms by surveying chi generation unit (1), laser shift frequency unit (2), anti-aliasing optical path (3) and phase measurement unit (4), wherein survey Laser output that chi generation unit (1) sends to the input end of laser shift frequency unit (2), output reference laser light beam (25) and the measuring laser beam (26) of laser shift frequency unit (2) output to anti-aliasing optical path (3), the output signal I of anti-aliasing optical path (3)
3, I
4, I
5, I
6be input to respectively phase measurement unit (4);
The structure of described survey chi generation unit (1) is: the laser beam of frequency reference laser instrument (5) transmitting arrives the input end of optical splitter (6), first output terminal of optical splitter (6) connects a semiconductor laser (7) input end, a semiconductor laser (7) output terminal connects the input end of a polaroid (8), second output terminal of described optical splitter (6) connects No. two semiconductor lasers (9) input end, the output terminal of No. two semiconductor lasers (9) connects the input end of No. two polaroids (10), an output terminal of frequency stabilized semiconductor laser (11) connects the input end of No. three polaroids (12),
The structure of described laser shift frequency unit (2) is: the input end of a half-wave plate (13) connects the output terminal of a polaroid (8), the output terminal of a half-wave plate (13) connects the input end of a polarization spectroscope (14), an output terminal of a polarization spectroscope (14) connects the input end of a catoptron (15), another output terminal of a polarization spectroscope (14) connects an input end of laser splicer (24), the output terminal of a catoptron (15) connects an input end of a laser frequency shifter (16), the output terminal of a DDS signal source (17) connects another input end of a laser frequency shifter (16), the output terminal of a laser frequency shifter (16) connects an input end of laser splicer (24), the input end of spectroscope (18) connects the output terminal of No. two polaroids (10), an output terminal of spectroscope (18) connects the input end of No. two catoptrons (19), another output terminal of spectroscope (18) connects an input end of laser splicer (24), the output terminal of No. two catoptrons (19) connects an input end of No. two laser frequency shifters (20), another input end of No. two laser frequency shifters (20) connects the output terminal of No. two DDS signal sources (21), the output terminal of No. two laser frequency shifters (20) connects an input end of laser splicer (24), an input end of described No. three laser frequency shifters (22) connects the output terminal of No. three polaroids (12), another input end of No. three laser frequency shifters (22) connects the output terminal of No. three DDS signal sources (23), the output terminal of No. three laser frequency shifters (22) connects an input end of laser splicer (24), laser splicer (24) output reference laser light beam (25) and measuring laser beam (26),
The structure of described anti-aliasing optical path (3) is: reference laser light beam (25) No. two spectroscopes of directive (27), through No. two spectroscopes (27) reflection, enter prism of corner cube (28) and form laser beam a(25-1), through No. two spectroscopes (27) transmission, enter reference prism (30) and form laser beam b(25-2), laser beam a(25-1) by a bugle cone prism (28), reflect back into No. two spectroscopes (27), through No. two spectroscopes (27) transmission, form laser beam c(25-3 again), reflect to form laser beam d(25-4), laser beam b(25-2) by reference prism (30), reflect back into No. two spectroscopes (27), through No. two spectroscopes (27) transmission, form laser beam e(25-5 again), reflect to form laser beam f(25-6), described measuring laser beam (26) No. two spectroscopes of directive (27), through No. two spectroscopes (27) transmission, enter measuring prism (29) and form laser beam g(26-1), reflection enters a bugle cone prism (28) and forms laser beam h(26-2), laser beam f(26-1) through measuring prism (29) reflection, enter No. two spectroscopes (27), through No. two spectroscopes (27) transmission, form laser beam j(26-4 again), reflect to form laser beam i(26-3), laser beam h(26-2) through bugle cone prism (28) reflection, enter No. two spectroscopes (27), through No. two spectroscopes (27) transmission, form laser beam l(26-6 again), reflect to form laser beam k(26-5), described laser beam c(25-3) with laser beam i(26-3) overlap, and enter the input end of a photelectric receiver (31) through No. four polaroids (32), described laser beam d(25-4) with laser beam j(26-4) overlap, and enter the input end of No. two photelectric receivers (34) through No. five polaroids (33), described laser beam e(25-5) with laser beam k(26-5) overlap, and enter the input end of No. three photelectric receivers (36) through No. six polaroids (35), described laser beam f(25-6) with laser beam l(26-6) overlap, and enter the input end of No. four photelectric receivers (38) through No. seven polaroids (37),
The structure of described phase measurement unit (4) is: the output terminal of a photelectric receiver (31) and No. four photelectric receivers (38) is connected with the input end of No. two low-pass filters (40) with a low-pass filter (39) respectively, the defeated output terminal of a low-pass filter (39) and No. two low-pass filters (40) is connected with the input end that is connected frequency mixer (43), the output terminal of frequency mixer (43) connects the input end of phase measurement meter (44), No. two photelectric receivers (34) are connected with the input end of No. four low-pass filters (42) with No. three low-pass filters (41) respectively with No. four photelectric receivers (38), the output terminal of No. three low-pass filters (41) and No. four low-pass filters (42) is connected with the input end of phase measurement meter (44).
2. the traced to the source accurate measurement chi semiconductor laser range device of anti-optics aliasing according to claim 1, it is characterized in that: one, two, No. three laser frequency shifter (16,20,22) of described laser shift frequency unit (2) comprises acousto-optic frequency shifters, electro-optic frequency translation device, and travel frequency can regulate.
3. the traced to the source accurate measurement chi semiconductor laser range device of anti-optics aliasing according to claim 1, it is characterized in that: in described survey chi generation unit (1), one, No. two semiconductor laser (7,9) is the rrequency-offset-lock laser instrument based on frequency reference laser instrument, and frequency stabilized semiconductor laser (11) is common frequency stabilized laser.
4. the traced to the source accurate measurement chi semiconductor laser range device of anti-optics aliasing according to claim 1, it is characterized in that: described survey chi generation unit (1) medium frequency benchmark laser (5) comprises iodine stabilized laser, femtosecond laser frequency comb laser instrument, and frequency stability is better than 10
-12.
5. traced to the source an accurate measurement chi semiconductor laser range method for anti-optics aliasing as claimed in claim 1, is characterized in that: concrete steps are as follows:
Step 1, open frequency benchmark laser (5), frequency stabilized semiconductor laser (11), a semiconductor laser (7) and No. two semiconductor lasers (9), after through preheating and frequency stabilization, the stable laser of frequency stabilized semiconductor laser (11) output frequency
,within a semiconductor laser (7) and No. two semiconductor lasers (9) are locked in the certain frequency scope of frequency reference laser instrument (5) by FEEDBACK CONTROL by output frequency, the laser sending from frequency stabilized semiconductor laser (11) after polaroid only surplus frequency be
v 1horizontal polarization direction laser, the rrequency-offset-lock laser sending from a semiconductor laser (7) after polaroid only surplus frequency be
v 2horizontal polarization direction laser, the rrequency-offset-lock laser that No. two semiconductor lasers (9) send remaining frequency after polaroid is
v 3vertical polarization laser;
Step 2, by the formed three beams of laser of step 1, enter laser shift frequency unit (2), its medium frequency is
v 2laser beam, after half-wave plate and a polarization spectroscope (14), separate the two mutually perpendicular laser in bundle polarization direction, wherein a road is through laser frequency shifter, by DDS signal source driving laser frequency shifter, shift frequency frequency is
f 1, another road is shift frequency not, and frequency is
v 3laser after spectroscope, be also divided into two-way one tunnel through laser frequency shifter, shift frequency frequency is
f 2, frequency is
v 1laser, through No. three laser frequency shifters, carry out shift frequency, shift frequency frequency is
f 4, obtain frequency and be
v 4 =v 1 + f 4laser, the laser of last various frequencies has five kinds of frequencies, is respectively
v 2,
v 3,
v 4,
v 2+
f 1with
v 3+
f 2, through the part of laser splicer (24), close light, by frequency, be
v 2+
f 1with
v 3+
f 2laser synthetic a branch of, form reference laser light beam (25), frequency is
v 2,
v 3,
v 4the synthetic measuring laser beam (26) of laser, and shine respectively anti-aliasing optical path;
Step 3, reference laser light beam (25) are divided into laser beam a(25-1 through No. two spectroscopes (27)) and laser beam b(25-2), measuring laser beam (26) is divided into laser beam g(26-1 through No. two spectroscopes (27)) and laser beam h(26-2), laser beam b(25-2) with laser beam h(26-2) respectively after a bugle cone prism (28) and reference prism (30) reflection, a bit joining on No. two spectroscopes (27) light splitting surface forms two beam interferometer light beams, wherein light beam through polarization direction with
v 4become 45 No. six polaroids (35) of spending to enter No. three photodetectors (36) and carry out opto-electronic conversion, then by the electric signal that obtains after No. four low-pass filters (42) comprising accurate measurement chi signal phase information, its frequency is
f 1-
f 2, corresponding survey chi length is
, another light beam through polarization direction with
v 4 after identical No. seven polaroids (37), obtain frequency and be
v 4,
v 2the laser of horizontal polarization direction, then enter into No. four photodetectors (38) and carry out opto-electronic conversion, the frequency of the electric signal obtaining its output electrical signals after No. two low-pass filters is
v 4-
v 2, corresponding survey chi length is
;
When step 4, measurement start, reference prism (30) maintains static, traverse measurement prism (29) is to destination end, measuring distance is L, laser beam g(26-1) after measuring prism (29) reflection, with laser beam a(25-1) at another some place of No. two spectroscopes (27), converge formation interfering beam, then form two beam interferometer laser through spectroscope light splitting, wherein a branch of through polarization direction with
v 4become 45 No. five polaroids (33) of spending to enter No. two photodetectors (34) and carry out opto-electronic conversion, then by the electric signal that obtains after No. three low-pass filters (41) comprising accurate measurement chi signal phase information, its frequency is
f 1-
f 2, corresponding survey chi length is
, another light beam through polarization direction with
v 4 after identical No. four polaroids (32), obtain frequency and be
v 4,
v 2the laser of horizontal polarization direction, then enter into a photelectric receiver (31) and carry out opto-electronic conversion, the frequency of the electric signal obtaining its output electrical signals after a low-pass filter (29) is
v 4-
v 2, corresponding survey chi length is
;
Step 5, by frequency, be
v 4-
v 2two signals access frequency mixer (43), reduce the frequency of two signals, then send into phase measurement meter (44), obtain the phase differential of two frequencies
Φ 1, by frequency, be
f 1-
f 2electric signal send into phase measurement meter (44) and survey phase, obtain the phase differential of two signals
Φ 2, according to formula
try to achieve the distance measure of bigness scale chi
l c , and its substitution formula is tried to achieve to the phase place round values of accurate measurement chi
; Wherein
floor(
x) function returns
xthe integral part of value, finally according to formula, try to achieve tested distance value:
, in formula: c is the light velocity, the air refraction that n is environment.
6. the traced to the source accurate measurement chi semiconductor laser range method of anti-optics aliasing according to claim 5, is characterized in that: described two path signal phase differential
Φ 1with phase differential
Φ 2measurement at synchronization, carry out.
7. the traced to the source accurate measurement chi semiconductor laser range method of anti-optics aliasing according to claim 5, is characterized in that: described laser frequency
v 2with
v 3can trace to the source to iodine frequency stabilization frequency reference source, the accurate measurement chi forming
can trace to the source.
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