CN104034517B - A kind of sub-wavelength photon screen focusing performance detection method - Google Patents
A kind of sub-wavelength photon screen focusing performance detection method Download PDFInfo
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Abstract
The invention discloses a kind of sub-wavelength photon screen focusing performance detection method.This detection method adopts the hybrid detection system that exposure method and scanning method combine, by LASER Light Source, beam-expanding collimation system, sub-wavelength photon screen, have been coated with the silicon chip of photoresist, vacuum pump, work stage, computer control system form；Wherein, work stage is collectively constituted by two-dimensional workpiece platform and the piezoelectric ceramics of PI Corp., and two-dimensional workpiece platform is used for coarse adjustment, and piezoelectric ceramics is used for accurate adjustment；The direction of motion of work stage and step value are configured by the software of computer control system, and wherein X-direction controls the stepping of focal length, and Y-direction controls the movement of focal beam spot.The certainty of measurement of the detection method of the present invention is not by the impact of CCD pixel spacing, it is not necessary to optical amplifier link, does not change the hot spot actual energy in space and is distributed.
Description
Technical field
The present invention relates to optical technical field, in particular a kind of sub-wavelength photon screen focusing performance detection method.
Background technology
Calendar year 2001, Germany L.Kipp professor publish an article on Nature periodical, the concept of photonsieves is proposed first, after be interpreted into " photon screen ", being a kind of diffraction optics image device, it is to replace the printing opacity endless belt of Fresnel structure to be formed with the aperture being randomly dispersed on printing opacity endless belt.After structure optimization, the aperture of random distribution can suppress secondary and Advanced Diffraction effectively, thus improving contrast and the resolving power of imaging, even can break traditions diffraction imaging theory, it is achieved super-resolution imaging.Hereafter, photon screen, by state, the big quantity research of inside and outside scholar, can be widely used in the fields such as nano-photoetching, astronomical observation, Aerial photography, weapon vision.
Along with improving constantly of resolving power requirement, as: reaching the sub-wavelength order of magnitude (that is: the spot diameter after focusing is less than incident light source wavelength), existing detection method is no longer applicable to the detection of photon screen focusing performance.Find a kind of new detection method, the focal imaging performance (containing performances such as spot size, Energy distribution, focal length sizes) of sub-wavelength photon screen is characterized, thus Optimization Theory and processing technology, play a driving role for practical in nano-photoetching system of sub-wavelength photon screen, it has also become industry is badly in need of the key problem solved.
Summary of the invention
The technical problem to be solved is the deficiency existed for prior art, it is provided that a kind of sub-wavelength photon screen focusing performance detection method.
Technical scheme is as follows:
A kind of sub-wavelength photon screen focusing performance detection method, this detection method adopts the hybrid detection system that exposure method and scanning method combine, by LASER Light Source (2-1), beam-expanding collimation system (2-2), sub-wavelength photon screen (2-3), have been coated with the silicon chip (2-4) of photoresist, vacuum pump (2-5), work stage (2-6), computer control system (2-7) form；Wherein, work stage (2-6) is collectively constituted by two-dimensional workpiece platform and the piezoelectric ceramics of PI Corp., and two-dimensional workpiece platform is used for coarse adjustment, and piezoelectric ceramics is used for accurate adjustment；The direction of motion of work stage (2-6) and step value are configured by the software of computer control system (2-7), and wherein X-direction controls the stepping of focal length, and Y-direction controls the movement of focal beam spot；
null1) operation principle of this hybrid detection system is: the light that LASER Light Source (2-1) sends becomes uniform after beam-expanding collimation system (2-2) processes、The directional light of collimation，Directional light forms tiny hot spot after sub-wavelength photon screen (2-3) focuses on focal plane，The silicon chip (2-4) having coated photoresist is placed on focal plane place，Silicon chip (2-4) is adsorbed by vacuum pump (2-5)，Relative position between sub-wavelength photon screen (2-3) and silicon chip (2-4) is accurately controlled by work stage (2-6)，The direction of motion of work stage (2-6) and step value are configured by the software of computer control system (2-7)，Silicon chip (2-4) after exposure namely obtains hot spot after development，Spot diameter is the actual measurement resolving power of sub-wavelength photon screen，Its size and Energy distribution carry secondary development function measurement and the display of software by atomic force microscope，When hot spot obtains minima，The corresponding distance between sub-wavelength photon screen (2-3) and silicon chip (2-4) is actual measurement focal length；
2) detection process is as follows: the wavelength of LASER Light Source is necessarily equal to incident light source wavelength during photon screen design, X-direction selects less than design focal length certain numerical value a as initial exposure distance, i.e. (X-a) μm, the initial value of Y-direction does not have ad hoc rule, only represent first exposure spot position in silicon chip, complete single exposure process；Then Y-direction stepping Δ y, increases a step value Δ x by X-direction simultaneously, and namely exposure distance becomes (X-a+ Δ x) μm, completes the exposure process of second hot spot；It is sequentially carried out down, until exposure distance is more than design focal length certain numerical value a, i.e. (X+a) μm；With developer solution, the silicon chip after exposure is developed, near focal plane, obtain the hot spot that a series of diameter after sub-wavelength photon screen focuses on are different, the X that minimum light spot is corresponding is focal length, minimum light spot size and Energy distribution and is carried secondary development function measurement and the display of software by atomic force microscope.
Photoresist on the described silicon chip scribbling photoresist is the photoresist to incident light source hypersensitivity.
The value of described a be design focal length ± 20%.
The value of described Δ x carries out value according to actual needs, and from desirable focal plane place farther out, the span of Δ x is 1-2 μm, and when desirable focal plane, the span of Δ x is 50-200nm.
The suggestion span of described Δ y is 1000-2000 μm, thus better discriminating between the interval of two hot spots.
The invention have the benefit that 1) certainty of measurement is by the impact of CCD pixel spacing, it is not necessary to optical amplifier link, do not change the hot spot actual energy in space and be distributed；2) can be used for the measurement of sub-wavelength photon screen focusing performance (containing performances such as spot size, Energy distribution, focal length sizes)；3) mixing detection method that this technical scheme is exposure method and scanning method combines, true reappearance photoetching process, good Process ba-sis is laid in the application in nano-photoetching system of the sub-wavelength photon screen；4) nano-photoetching system can be used for the manufacture of super large-scale integration.
Accompanying drawing explanation
The hybrid detection system that Fig. 1 is exposure method and scanning method combines.
Fig. 2 is sub-wavelength photon screen (because visual field is limited, only take part picture) in kind.
Fig. 3 is sub-wavelength photon screen focal beam spot light intensity normalization distribution.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.
Embodiment 1
1, the hybrid detection system that Fig. 1 is exposure method and scanning method combines, by LASER Light Source 2-1, beam-expanding collimation system 2-2, sub-wavelength photon screen 2-3, have been coated with the silicon chip 2-4 of photoresist, vacuum pump 2-5, work stage 2-6, computer control system 2-7 form.nullThe light that LASER Light Source 2-1 sends becomes uniform after beam-expanding collimation system 2-2 processes、The directional light of collimation，Directional light forms tiny hot spot after sub-wavelength photon screen 2-3 focuses on focal plane，The silicon chip 2-4 having coated photoresist is placed on focal plane place，Silicon chip 2-4 is adsorbed by vacuum pump 2-5，Relative position between sub-wavelength photon screen 2-3 and silicon chip 2-4 is accurately controlled by work stage 2-6，The direction of motion of work stage 2-6 and step value are configured by the software of computer control system 2-7，Silicon chip 2-4 after exposure can obtain hot spot after development，Spot diameter is the actual measurement resolving power of sub-wavelength photon screen，Its size and Energy distribution can carry secondary development function measurement and the display of software by atomic force microscope，When hot spot obtains minima，The corresponding distance between sub-wavelength photon screen 2-3 and silicon chip 2-4 is actual measurement focal length.
Wherein, the wavelength of LASER Light Source is necessarily equal to incident light source wavelength when photon screen designs；Work stage 2-6 is collectively constituted by two-dimensional workpiece platform and the piezoelectric ceramics of PI Corp., and two-dimensional workpiece platform is used for coarse adjustment, and piezoelectric ceramics is used for accurate adjustment, and the stepping accuracy of piezoelectric ceramics is 5nm；The direction of motion of work stage 2-6 and step value are configured by the software of computer control system 2-7, and wherein X-direction controls the stepping of focal length, and Y-direction controls the movement of focal beam spot.
2, the detection process of sub-wavelength photon screen focusing performance detection method is as follows: consider the processing technology error of sub-wavelength photon screen, X-direction is optional less than designing focal length certain numerical value a as initial exposure distance, i.e. (X-a) μm, the initial value of Y-direction does not have ad hoc rule, only represent first exposure spot position in silicon chip, complete single exposure process.Then Y-direction stepping Δ y is (for better discriminating between the interval of two hot spots, can step value Δ y be taken larger), X-direction being increased a step value Δ x, namely exposure distance becomes (X-a+ Δ x) μm, completes the exposure process of second hot spot simultaneously.It is sequentially carried out down, until exposure distance is more than design focal length certain numerical value a, i.e. (X+a) μm.With developer solution, the silicon chip after exposure is developed, near focal plane, obtain the hot spot that a series of diameter after sub-wavelength photon screen focuses on are different, the X that minimum light spot is corresponding is focal length, and namely minimum light spot size and Energy distribution carry secondary development function measurement and the display of software by atomic force microscope.
About the value of a, value can be carried out according to actual needs, generally take design focal length ± 20% scope, for instance design focal length is 150 μm, and taking a is 30 μm, then initial exposure distance is chosen as 120 μm, and termination exposure distance is chosen as 180 μm.
About the value of Δ x, can carrying out value according to actual needs, from desirable focal plane place farther out, the suggestion span of Δ x is (1-2) μm；When desirable focal plane, suggestion span (50-200) nm of Δ x；Because the depth of focus of photon screen is shorter, during such as close focal plane, Δ x is taken greatly, be just likely to miss optimal focal plane.
Embodiment 2
In this specific embodiment, test object sub-wavelength photon screen is as shown in Figure 2, this photo is obtained when amplifying 1100 times by scanning electron microscope S-4800, design parameter is: incident light source wavelength is 457nm, and focal length is 150 μm, diameter 250 μm, most outer shroud hole diameter is 420nm, hole diameter and corresponding zone plate endless belt width ratio are 1.46, calculate by sub-wavelength photon screen imaging theory, and resolution is about 288nm.
As it is shown in figure 1, the detection system adopted for the present embodiment.Wherein, when the centre wavelength of LASER Light Source 2-1 must design with sub-wavelength photon screen 2-3, incident light source wavelength is consistent, because sub-wavelength photon screen 2-3 is diffraction imaging optical element, to wavelength sensitive, it is 457nm that the present embodiment chooses wavelength, and linear polarization mode, live width is less than 0.1nm；Beam-expanding collimation system 2-2 is made up of lens 1, lens 2 and pin hole, and Main Function is to become the light that LASER Light Source 2-1 sends more to collimate uniform directional light；The placement direction of sub-wavelength photon screen 2-3 is perpendicular to detection system primary optical axis；The photoresist being coated with on silicon chip 2-4 must be the photoresist to incident light source hypersensitivity, because the diffraction efficiency of sub-wavelength photon screen is relatively low, cause the waste of energy, consider the characteristic of laser source wavelength, have employed SU-8 type photoresist in the present embodiment, the photoresist spinner that gluing process is accurately controlled by rotating speed completes；Vacuum pump 2-5 is used for adsorbing silicon chip；Work stage 2-6 is made up of two-dimensional workpiece platform and the piezoelectric ceramics of PI Corp., and wherein two-dimensional workpiece platform is used for coarse adjustment, and stepping accuracy is 100nm, and piezoelectric ceramics is used for accurate adjustment, and stepping accuracy is 5nm；The software program of computer control system 2-7 is write by VC++ language, has that exposure image selects, step direction controls, step value is arranged, the function such as focometry, exposure image dimensional measurement；
Concrete detection process is as follows: 1) adjust beam-expanding collimation system 2-2, makes the LASER Light Source 2-1 light sent become the uniform directional light of collimation；2) by the software program of computer control system 2-7, X, Y-direction being resetted, wherein X-direction represents focal length, and Y-direction represents the interval of adjacent two hot spots；3) sub-wavelength photon screen error in design and making is considered, may result in real focal length off-design value, therefore first X-direction is stepped to 120 μm as initial exposure distance, the initial value of Y-direction does not have ad hoc rule, only represent first exposure spot position in silicon chip, this example takes 4000 μm, completes single exposure process；4) Y-direction stepping 1000 μm, increase a step value 1 μm by X-direction simultaneously, and namely X-direction distance becomes 121 μm, completes the exposure process of second hot spot；5) repeating above-mentioned exposure process, until X-direction distance becomes 140 μm, for avoiding missing pinpointed focus, reduce X-direction step value, change 50nm into, Y-direction step value is constant, repeats above-mentioned exposure process；6) until X-direction distance becomes 160 μm, the step value 1 μm of X-direction is recovered, until X-direction distance becomes 180 μm；7) with developer solution, the silicon chip after exposure is developed, near focal plane, obtain the hot spot that a series of diameter is different, interval between hot spot and the step value of Y-direction 1000 μm, the X that minimum light spot is corresponding is focal length, the focal length that the present embodiment records is 145.8 μm, close with design load 160 μm, and relative error is only 2.8%；8) minimum light spot size and Energy distribution can carry secondary development function measurement and the display of software by atomic force microscope, and the hot spot measuring sub-wavelength photon screen in the present embodiment is 444.8nm.
Owing to sub-wavelength photon screen belongs to diffraction optics image-forming component, breach the conventional diffractive limit, directly judge that the resolving power of sub-wavelength photon screen is relatively difficult by Rayleigh criterion, full width at half maximum (the FWHM of conventional diffraction pattern main lobe in actual applications, FullWithatHalf-Maximum) quality and the resolving power of sub-wavelength photon screen imaging facula are judged, the full width at half maximum of this embodiment Central Asia wavelength photons sieve focal beam spot is 302nm, as shown in Figure 3.Close with design load 288nm, relative error is only 4.86%, and this error is mainly caused by processing technology error.
It should be appreciated that for those of ordinary skills, it is possible to improved according to the above description or converted, and all these are improved and convert the protection domain that all should belong to claims of the present invention.
Claims (5)
1. a sub-wavelength photon screen focusing performance detection method, it is characterized in that, this detection method adopts the hybrid detection system that exposure method and scanning method combine, by LASER Light Source (2-1), beam-expanding collimation system (2-2), sub-wavelength photon screen (2-3), have been coated with the silicon chip (2-4) of photoresist, vacuum pump (2-5), work stage (2-6), computer control system (2-7) form；Wherein, work stage (2-6) is collectively constituted by two-dimensional workpiece platform and the piezoelectric ceramics of PI Corp., and two-dimensional workpiece platform is used for coarse adjustment, and piezoelectric ceramics is used for accurate adjustment；The direction of motion of work stage (2-6) and step value are configured by the software of computer control system (2-7), and wherein X-direction controls the stepping of focal length, and Y-direction controls the movement of focal beam spot；
null1) operation principle of this hybrid detection system is: the light that LASER Light Source (2-1) sends becomes uniform after beam-expanding collimation system (2-2) processes、The directional light of collimation，Directional light forms tiny hot spot after sub-wavelength photon screen (2-3) focuses on focal plane，The silicon chip (2-4) having coated photoresist is placed on focal plane place，Silicon chip (2-4) is adsorbed by vacuum pump (2-5)，Relative position between sub-wavelength photon screen (2-3) and silicon chip (2-4) is accurately controlled by work stage (2-6)，The direction of motion of work stage (2-6) and step value are configured by the software of computer control system (2-7)，Silicon chip (2-4) after exposure namely obtains hot spot after development，Spot diameter is the actual measurement resolving power of sub-wavelength photon screen，Its size and Energy distribution carry secondary development function measurement and the display of software by atomic force microscope，When hot spot obtains minima，The corresponding distance between sub-wavelength photon screen (2-3) and silicon chip (2-4) is actual measurement focal length；
2) detection process is as follows: the wavelength of LASER Light Source is necessarily equal to incident light source wavelength during photon screen design, X-direction selects less than design focal length certain numerical value a as initial exposure distance, i.e. (X-a) μm, the initial value of Y-direction does not have ad hoc rule, only represent first exposure spot position in silicon chip, complete single exposure process；Then Y-direction stepping Δ y, increases a step value Δ x by X-direction simultaneously, and namely exposure distance becomes (X-a+ Δ x) μm, completes the exposure process of second hot spot；It is sequentially carried out down, until exposure distance is more than design focal length certain numerical value a, i.e. (X+a) μm；With developer solution, the silicon chip after exposure is developed, near focal plane, obtain the hot spot that a series of diameter after sub-wavelength photon screen focuses on are different, the X that minimum light spot is corresponding is focal length, minimum light spot size and Energy distribution and is carried secondary development function measurement and the display of software by atomic force microscope.
2. sub-wavelength photon screen focusing performance detection method according to claim 1, is characterized in that, described in the photoresist that scribbles on the silicon chip of photoresist be the photoresist to incident light source hypersensitivity.
3. sub-wavelength photon screen focusing performance detection method according to claim 1, is characterized in that, the value of described a be design focal length ± 20%.
4. sub-wavelength photon screen focusing performance detection method according to claim 1, is characterized in that, the value of described Δ x carries out value according to actual needs, and from desirable focal plane place farther out, the span of Δ x is 1-2 μm；When desirable focal plane, the span of Δ x is 50-200nm.
5. sub-wavelength photon screen focusing performance detection method according to claim 1, is characterized in that, the span of described Δ y is 1000-2000 μm, is conducive to better discriminating between the interval of adjacent two hot spots.
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| CN104656174B (en) * | 2015-03-10 | 2017-08-29 | 西华大学 | Sub-wavelength photon screen compound eye |
| CN104865627B (en) * | 2015-05-30 | 2018-01-16 | 苏州大学 | A kind of broadband photon sieve based on wavefront coding technology |
| CN105404017B (en) * | 2015-12-21 | 2017-12-08 | 哈尔滨工业大学 | Photon screen primary mirror dual colour imaging optical system and its application |
| CN106054297A (en) * | 2016-08-01 | 2016-10-26 | 苏州大学 | Large field diffraction photon sieve |
| CN110275232A (en) * | 2018-03-16 | 2019-09-24 | 中国科学院上海光学精密机械研究所 | A kind of varifocal imaging method based on Greece's ladder photon screen |
| CN109141825B (en) * | 2018-09-13 | 2019-07-02 | 西华大学 | Subwavelength optics image device focal length measuring equipment and its measurement method |
| CN112946688B (en) * | 2021-02-02 | 2024-02-02 | 松山湖材料实验室 | Novel photon counting laser radar 3D imaging method and device |
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| CN101561637A (en) * | 2009-05-15 | 2009-10-21 | 中国科学院光电技术研究所 | Laser direct-writing photoetching system based on photon sieve |
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