CN104032281A - Method for solving particle high jump of tetraethyl orthosilicate (TEOS) drilling crew after being maintained - Google Patents
Method for solving particle high jump of tetraethyl orthosilicate (TEOS) drilling crew after being maintained Download PDFInfo
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Abstract
The invention discloses a method for solving particle high jump of a tetraethyl orthosilicate (TEOS) drilling crew after being maintained. The method adopts the following components: an inlet pipeline, a flow meter, a film branch pipeline, an atomizer of the film branch pipeline, a thick film branch pipeline, an atomizer of the thick film branch pipeline and a process chamber. The method comprises the following steps: after the TEOS drilling crew is maintained, respectively carrying out cleaning treatment on the thick film branch pipeline and the film branch pipeline for at least one time by adopting a technique of depositing a TEOS thick film and depositing a TEOS film, so as to discharge small crystal particles in the film branch pipeline and the thick film branch pipeline. By adopting the method, secondary particle pollution caused by gas backflow of the pipeline can be effectively solved, and the crystal particles in the film branch pipeline and the thick film branch pipeline are effectively cleaned, so that the problem of the particle high jump after the drilling crew is maintained is solved.
Description
Technical field
The present invention relates to ic manufacturing technology field, more particularly, relate to the method for the rear particle high jump of TEOS in a kind of solution film deposition art (tetraethyl-silicon oxide) technique board maintenance.
Background technology
In semiconductor integrated circuit manufacturing process, TEOS deposit silicon-dioxide is because step coverage is good, cost is low, as medium layer, be widely used, wherein, TEOS deposit is the gaseous reactant introducing reaction chamber that forms film element containing, and at silicon chip surface generation chemical reaction, thereby generates required solid film and is deposited on its surperficial technique.In actual volume production, for cost-saving and flexible allotment production capacity, conventionally TEOS thick-film technique and TEOS thin-film technique are applied to same board, as shown in Figure 1, Fig. 1 is TEOS board divided thin film bye-pass and thick film branch line schematic diagram in prior art, and wherein, 1 is inlet ductwork, 2 is under meter, 3 is divided thin film bye-pass, and 4 is the spraying gun of divided thin film bye-pass, and 5 is processing chamber, 6 is thick film branch line, and 7 is the spraying gun of thick film branch line; In Fig. 1, liquid TEOS, after inlet ductwork and under meter, is branched to two-way pipeline, and a road is the spraying gun of divided thin film bye-pass and divided thin film bye-pass, then to processing chamber, carries out deposit TEOS film and processes; An other road is the spraying gun of thick film branch line and thick film branch line, then to processing chamber, carries out deposit TEOS thick film process; But in actual TEOS depositing technics volume production, particularly after the maintenance of TEOS board, always there is particle high jump phenomenon, serious also can make first 1～3 batch of silicon chip criticize to be injured, particle high jump phenomenon refers to be mingled with in gas the small-particle of particle form, on overlay film product, will cause salient point, salient point place easily causes that copper cash disconnects, the integrity problem of the yield such as damaged and product; For example use LAM (general woods) Vector of company to do in TEOS depositing technics, in TEOS depositing technics volume production, particularly, after board maintenance, always occur particle high jump phenomenon; Major cause be TEOS as liquid source, be easy to meet cold crystallization, particularly in the position of bend, valve and the spraying gun Deng You mechanism resistance of pipeline.
In the prior art, for solving TEOS, as liquid source, easily meet the method for cold crystallization, the advanced method of industry is with heating, to bring insulation on the gas piping of TEOS at present, heating zone makes the temperature of TEOS gas piping higher than the temperature of TEOS crystallization by the heating of resistance wire, to reach the method that prevents TEOS crystallization, reduce the particle high jump phenomenon that TEOS board in use occurs.
Yet, the current method of insulation of bringing with heating on the gas piping of TEOS, can only reduce the particle high jump phenomenon that TEOS board in use occurs, but when running into board and maintain, TEOS board just must be lowered the temperature and begin to speak, and comprises processing chamber cooling and heating zone cooling; The action of this cooling, easily causes the TEOS condensation-crystallization remaining in pipeline, the following response source air-flow of answering a pager's call enter processing chamber from and produce technique particle high jump problem.
If wished after board maintenance, still can guarantee does not have particle high jump problem, need to have the process treatment process that runs false sheet (take silicon chip carry out thin-film deposition processing for testing plate), the false sheet mode of existing race is in order to save time and cost, conventionally only use TEOS thick-film technique, by using the processing method of deposit TEOS thick film, the particle in thick film lateral is washed away with discharge line, avoid ducted crystalline particle to cause the high jump problem in product.
Yet, those skilled in the art know that, only use deposit TEOS thick-film technique, and do not use deposit TEOS thin-film technique, TEOS divided thin film bye-pass can not get effective purification, add the bend of pipeline, the position of valve and spraying gun Deng You mechanism resistance, often deposit crystalline particle, and can be because the backflow effect that pipeline divides prong place, in divided thin film bye-pass, the TEOS particle of condensation-crystallization still can return to thick film branch line, cause the pollution again of thick film branch line, after so the maintenance of TEOS board is answered a pager's call, in TEOS thick film lateral and TEOS divided thin film small transfer line, there is causing the crystalline particle of particle high jump in capital.
Therefore, those skilled in the art is devoted to develop a kind of TEOS of solution board maintenance method of particle high jump afterwards, can effectively prevent that board from maintaining the particle of first product silicon chip afterwards and being injured, thereby has improved yield, stability and the reliability of product.
Summary of the invention
Because the above-mentioned defect of prior art the object of the invention is to effectively prevent that TEOS board from maintaining the particle of first product silicon chip afterwards and being injured, thereby yield, stability and the reliability of product have been improved.
For achieving the above object, the invention provides the method for the rear particle high jump of a kind of effective solution TEOS board maintenance, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, to thick film branch line and divided thin film bye-pass, pass into respectively TEOS, thick film branch line and divided thin film bye-pass are respectively carried out respectively to clean at least one times, to discharge the crystallization small-particle in divided thin film bye-pass and thick film branch line, two-way divided thin film bye-pass and thick film branch line are all effectively cleaned, and the second particle pollution problem that effectively solution refluxes and causes due to pipeline gas.Technical scheme of the present invention is as follows:
A kind of method that solves the rear particle high jump of TEOS board maintenance, described TEOS board includes inlet ductwork, divided thin film bye-pass, thick film branch line and processing chamber, described inlet ductwork is equipped with under meter, described divided thin film bye-pass and thick film branch line are equipped with respectively spraying gun, described divided thin film bye-pass and thick film branch line are communicated with respectively the processing chamber of described TEOS board, it is characterized in that, after the maintenance of described solution TEOS board, the method for particle high jump is by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, to described thick film branch line and divided thin film bye-pass, pass into respectively TEOS, described thick film branch line and divided thin film bye-pass are respectively carried out respectively to clean at least one times, to discharge the crystallization small-particle in described divided thin film bye-pass and thick film branch line, wherein, when described thick film branch line is carried out to clean, select deposit TEOS thick-film technique to run false sheet, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described thick film branch line, and discharged to described processing chamber, when described divided thin film bye-pass is carried out to clean, select deposit TEOS thin-film technique to run false sheet, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described divided thin film bye-pass, and discharged to described processing chamber.
Preferably, to described thick film branch line and the divided thin film bye-pass clean that hockets.
Preferably, first described divided thin film bye-pass is carried out to clean, more described thick film branch line is carried out to clean.
Preferably, first described divided thin film bye-pass is carried out to clean, more described thick film branch line is carried out to clean, then, again described divided thin film bye-pass is carried out to clean.
Preferably, when described thick film branch line is carried out to clean, open the described under meter of described inlet ductwork, the spraying gun of described thick film branch line, close the spraying gun of described divided thin film bye-pass, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described thick film branch line, and discharged to described processing chamber, to discharge the crystallization small-particle in described thick film branch line.
Preferably, when described divided thin film bye-pass is carried out to clean, open the described under meter of described inlet ductwork, the spraying gun of described divided thin film bye-pass, close the spraying gun of described thick film branch line, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described divided thin film bye-pass, and discharged to described processing chamber, to discharge the crystallization small-particle in described divided thin film bye-pass.
Preferably, when described divided thin film bye-pass is carried out to clean, select deposit TEOS thin-film technique to run false sheet, deposition time is 6～8sec; When described thick film branch line is carried out to clean, select deposit TEOS thick-film technique to run false sheet, deposition time is 5～7sec.
The object of design is herein, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, thick film branch line and divided thin film bye-pass are passed into respectively to TEOS, thick film branch line and divided thin film bye-pass are respectively carried out respectively to clean at least one times, to discharge the crystallization small-particle in divided thin film bye-pass and thick film branch line, and complete by operating system is disposable, two-way divided thin film bye-pass and thick film branch line are all effectively cleaned, the second particle pollution problem that can avoid the backflow of pipeline gas to cause, the particle issues of bringing to eliminate board maintenance, thereby solve the particle high jump problem after board maintenance, the deposition time of cleaning film branch line is 6～8sec, and the deposition time of clean thick film branch line is 5～7sec, to guarantee, under the prerequisite of cleaning effect, shortening the cleaning operation time, reduces the cost waste of deposit TEOS.
Preferably, when described divided thin film bye-pass is carried out to clean, the flow that passes into of TEOS is 0.1～2mgm, and when described thick film branch line is carried out to clean, the flow that passes into of TEOS is 10～20mgm.
The object of design is herein, the processing parameter of selected flow during the false sheet of selected race, can be when guaranteeing effective flush pipe road, there is the phenomenon of depositing crystalline particle in mechanism's resistance places such as the bend of minimizing pipeline, valve, in case the particle high jump problem that the maintenance of stop machine platform brings can reduce again the cost waste and the consumption of time that cause while running false sheet simultaneously.
From technique scheme, can find out, a kind of method that solves the rear particle high jump of TEOS board maintenance of the present invention, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, to thick film branch line and divided thin film bye-pass, pass into respectively TEOS, thick film branch line and divided thin film bye-pass are respectively carried out respectively to clean at least one times, to discharge the crystallization small-particle in divided thin film bye-pass and thick film branch line, two-way divided thin film bye-pass and thick film branch line are all effectively cleaned, and the second particle that effectively solution causes because pipeline gas refluxes pollutes.
Below with reference to accompanying drawing, the technique effect of design of the present invention, idiographic flow and generation is described further, to understand fully object of the present invention, feature and effect.
Accompanying drawing explanation
Fig. 1 is TEOS board divided thin film bye-pass and thick film branch line schematic diagram in prior art;
Fig. 2 is a kind of process flow diagram that solves the method for the rear particle high jump of TEOS board maintenance of the present invention;
Fig. 3 is that in the present invention, deposit TEOS film flows to schematic diagram with the TEOS of cleaning film branch line;
Fig. 4 is that in the present invention, deposit TEOS thick film flows to schematic diagram to clean the TEOS of thick film branch line.
In figure, 1 is inlet ductwork, and 2 is under meter, and 3 is divided thin film bye-pass, and 4 is the spraying gun of divided thin film bye-pass, and 5 is processing chamber, and 6 is thick film branch line, and 7 is the spraying gun of thick film branch line.
Embodiment
Below in conjunction with accompanying drawing 2～4, the specific embodiment of the present invention is described in further detail.
It should be noted that, in the following embodiments, take and adopt 6 inches of big or small silicon chips to describe as example as false sheet; As Fig. 2, Fig. 2 is a kind of process flow diagram that solves the method for the rear particle high jump of TEOS board maintenance of the present invention, it has illustrated the method for the rear particle high jump of a kind of effective solution TEOS board maintenance, described TEOS board includes inlet ductwork 1, divided thin film bye-pass 3 and thick film branch line 6, described inlet ductwork 1 is equipped with under meter 2, described divided thin film bye-pass 3 and thick film branch line 6 are equipped with respectively spraying gun, and described divided thin film bye-pass 3 and thick film branch line 6 are communicated with respectively the processing chamber 5 of described TEOS board.
In the clean of embodiment, first described divided thin film bye-pass 3 is carried out to clean, as the step S01 in Fig. 2, again described thick film branch line 6 is carried out to clean, as the step S02 in Fig. 2, then, again described divided thin film bye-pass 3 is carried out to clean, as the step S03 in Fig. 2.
Refer to Fig. 4, Fig. 4 is that in the present invention, deposit TEOS thick film flows to schematic diagram to clean the TEOS of thick film branch line; As shown in Figure 4, when described thick film branch line 6 is carried out to clean, open the described under meter 2 of described inlet ductwork 1, the spraying gun 7 of described thick film branch line, close the spraying gun 4 of described divided thin film bye-pass, the TEOS being passed into by described inlet ductwork 1, through the crossing of described thick film branch line 6 and divided thin film bye-pass 3, enter described thick film branch line 6, and discharged to described processing chamber 5, to discharge the crystallization small-particle in described thick film branch line 6; When described thick film branch line 6 is carried out to clean, deposition time is 5sec, and the flow that passes into of TEOS is 10mgm.
Refer to Fig. 3, Fig. 3 is that in the present invention, deposit TEOS film flows to schematic diagram with the TEOS of cleaning film branch line; As shown in Figure 3, when described divided thin film bye-pass 3 is carried out to clean, open the described under meter 2 of described inlet ductwork 1, the spraying gun 4 of described divided thin film bye-pass, close the spraying gun 7 of described thick film branch line, the TEOS being passed into by described inlet ductwork 1, through the crossing of described thick film branch line 6 and divided thin film bye-pass 3, enter described divided thin film bye-pass 3, and discharged to described processing chamber 5, to discharge the crystallization small-particle in described divided thin film bye-pass 3; When described divided thin film bye-pass 3 is carried out to clean, deposition time is 6sec, and the flow that passes into of TEOS is 0.1mgm.
From above-described embodiment, can find out, the method of particle high jump after the maintenance of a kind of effective solution TEOS board of the present invention, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, thick film branch line 6 and divided thin film bye-pass 3 are passed into respectively to TEOS, the clean that thick film branch line 6 is carried out once, divided thin film bye-pass 3 is carried out to the clean of twice, to discharge the crystallization small-particle in divided thin film bye-pass and thick film branch line, two-way divided thin film bye-pass and thick film branch line are all effectively cleaned, and the second particle that effectively solution causes because pipeline gas refluxes pollutes.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification sheets of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. one kind solves the method that TEOS board maintains rear particle high jump, described TEOS board includes inlet ductwork, divided thin film bye-pass, thick film branch line and processing chamber, described inlet ductwork is equipped with under meter, described divided thin film bye-pass and thick film branch line are equipped with respectively spraying gun, described divided thin film bye-pass and thick film branch line are communicated with respectively the processing chamber of described TEOS board, it is characterized in that, after the maintenance of described solution TEOS board, the method for particle high jump is by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, to described thick film branch line and divided thin film bye-pass, pass into respectively TEOS, described thick film branch line and divided thin film bye-pass are respectively carried out respectively to clean at least one times, to discharge the crystallization small-particle in described divided thin film bye-pass and thick film branch line, wherein, when described thick film branch line is carried out to clean, select deposit TEOS thick-film technique to run false sheet, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described thick film branch line, and discharged to described processing chamber, when described divided thin film bye-pass is carried out to clean, select deposit TEOS thin-film technique to run false sheet, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described divided thin film bye-pass, and discharged to described processing chamber.
2. the method for particle high jump after the maintenance of solution as claimed in claim 1 TEOS board, is characterized in that, to described thick film branch line and the divided thin film bye-pass clean that hockets.
3. the method for particle high jump after solution TEOS board as claimed in claim 1 maintenance, is characterized in that, first described divided thin film bye-pass is carried out to clean, more described thick film branch line is carried out to clean.
4. solution TEOS board as claimed in claim 1 maintains the method for rear particle high jump, it is characterized in that, first described divided thin film bye-pass is carried out to clean, more described thick film branch line is carried out to clean, then, again described divided thin film bye-pass is carried out to clean.
5. the solution TEOS board as described in claim 1～4 any one maintains the method for rear particle high jump, it is characterized in that, when described thick film branch line is carried out to clean, open the described under meter of described inlet ductwork, the spraying gun of described thick film branch line, close the spraying gun of described divided thin film bye-pass, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described thick film branch line, and discharged to described processing chamber, to discharge the crystallization small-particle in described thick film branch line.
6. the solution TEOS board as described in claim 1～4 any one maintains the method for rear particle high jump, it is characterized in that, when described divided thin film bye-pass is carried out to clean, open the described under meter of described inlet ductwork, the spraying gun of described divided thin film bye-pass, close the spraying gun of described thick film branch line, the TEOS being passed into by described inlet ductwork, through the crossing of described thick film branch line and divided thin film bye-pass, enter described divided thin film bye-pass, and discharged to described processing chamber, to discharge the crystallization small-particle in described divided thin film bye-pass.
7. the method for particle high jump after the maintenance of the solution TEOS board as described in claim 1～4 any one, is characterized in that, when described divided thin film bye-pass is carried out to clean, select deposit TEOS thin-film technique to run false sheet, deposition time is 6～8sec; When described thick film branch line is carried out to clean, select deposit TEOS thick-film technique to run false sheet, deposition time is 5～7sec.
8. the solution TEOS board as described in claim 1～4 any one maintains the method for rear particle high jump, it is characterized in that, when described divided thin film bye-pass is carried out to clean, the flow that passes into of TEOS is 0.1～2mgm, when described thick film branch line is carried out to clean, the flow that passes into of TEOS is 10～20mgm.
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| CN201410286826.9A CN104032281B (en) | 2014-06-24 | 2014-06-24 | A kind of method solving the rear particle high jump of TEOS board maintenance |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102877041A (en) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | Film deposition method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102877041A (en) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | Film deposition method |
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