CN104032281B - A kind of method solving the rear particle high jump of TEOS board maintenance - Google Patents
A kind of method solving the rear particle high jump of TEOS board maintenance Download PDFInfo
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- CN104032281B CN104032281B CN201410286826.9A CN201410286826A CN104032281B CN 104032281 B CN104032281 B CN 104032281B CN 201410286826 A CN201410286826 A CN 201410286826A CN 104032281 B CN104032281 B CN 104032281B
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Abstract
A kind of method solving the rear particle high jump of TEOS board maintenance, comprise inlet ductwork, under meter, film branch line, the spraying gun of film branch line, thick film branch line, the spraying gun of thick film branch line and processing chamber, after the maintenance of TEOS board, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, to the clean that thick film branch line and film branch line respectively carry out at least one times respectively, to discharge the crystallising small particles in film branch line and thick film branch line; The present invention can effectively solve because the reflux second particle that causes of pipeline gas pollutes, and the crystalline particle in film branch line and thick film branch line is all effectively cleaned, thus solves the particle high jump problem after board maintenance.
Description
Technical field
The present invention relates to ic manufacturing technology field, more particularly, relate to a kind of method solving particle high jump after the maintenance of TEOS (tetraethyl-silicon oxide) technique board in film deposition art.
Background technology
In semiconductor integrated circuit manufacturing process, TEOS deposit silicon-dioxide due to step coverage good, cost is low, be widely used as medium layer, wherein, TEOS deposit introduces reaction chamber containing the gaseous reactant forming film element, at silicon chip surface generation chemical reaction, thus solid film needed for generating be deposited on the technique on its surface.In actual volume production, in order to cost-saving and flexible allotment that is production capacity, usually TEOS thick-film technique and TEOS thin-film technique are applied to same board, as shown in Figure 1, Fig. 1 is TEOS board film branch line and thick film branch line schematic diagram in prior art, and wherein, 1 is inlet ductwork, 2 is under meter, 3 is film branch line, and 4 is the spraying gun of film branch line, and 5 is processing chamber, 6 is thick film branch line, and 7 is the spraying gun of thick film branch line; In FIG, liquid TEOS, after inlet ductwork and under meter, is branched to two-way pipeline, and a road is the spraying gun of film branch line and film branch line, then arrives processing chamber and carries out the process of deposit TEOS film; An other road is the spraying gun of thick film branch line and thick film branch line, then arrives processing chamber and carries out deposit TEOS thick film process; But in the TEOS depositing technics volume production of reality, particularly after the maintenance of TEOS board, always there is particle high jump phenomenon, serious first 1 ~ 3 batch of silicon chip also can be made to criticize be injured, particle high jump phenomenon refers to the small-particle being mingled with particle form in gas, coated products will cause salient point, and salient point place easily causes the integrity problem of the yields such as copper cash disconnection, defect and product; Such as use LAM (general woods) company Vector to do in TEOS depositing technics, in TEOS depositing technics volume production, particularly after board maintenance, always occur particle high jump phenomenon; Major cause be TEOS as liquid source, be easy to meet cold crystallization, particularly in the position of the bend of pipeline, valve and spraying gun Deng You mechanism resistance.
In the prior art, solution TEOS is easily met to the method for cold crystallization as liquid source, the advanced method of current industry brings insulation with heating on the gas piping of TEOS, heating zone makes the temperature of TEOS gas piping higher than the temperature of TEOS crystallization by the heating of resistance wire, to reach the method preventing TEOS crystallization, reduce the particle high jump phenomenon that TEOS board in use occurs.
But, the current method bringing insulation on the gas piping of TEOS with heating, can only reduce the particle high jump phenomenon that TEOS board in use occurs, but when running into board maintenance, TEOS board just must be lowered the temperature and be begun to speak, and comprises processing chamber cooling and heating zone cooling; The action of this cooling, easily causes the TEOS condensation-crystallization remained in pipeline, following response source air-flow of answering a pager's call enter processing chamber from and produce process particulates high jump problem.
If wish after board maintenance, still can ensure there is no particle high jump problem, then need the process treatment process running false sheet (being that testing plate carries out thin-film deposition process with silicon chip), the false sheet mode of existing race is in order to save time and cost, usually only TEOS thick-film technique is used, namely by using the processing method of deposit TEOS thick film, the particle in thick film lateral being carried out washing away with discharge line, avoiding ducted crystalline particle to cause high jump problem in product.
But, those skilled in the art know that, only use deposit TEOS thick-film technique, and do not use deposit TEOS thin-film technique, TEOS film branch line can not get effective purification, add the bend of pipeline, the position of valve and spraying gun Deng You mechanism resistance, often deposit crystalline particle, and can because the backflow effect at line branches mouth place, in film branch line, the TEOS particle of condensation-crystallization still can return thick film branch line, cause the pollution again of thick film branch line, so TEOS board maintenance answer a pager's call after, in TEOS thick film lateral and TEOS film lateral, there is the crystalline particle causing particle high jump in capital.
Therefore, those skilled in the art is devoted to develop a kind of method solving particle high jump after the maintenance of TEOS board, and after maintaining effectively can prevent board, the particle of first product silicon chip is injured, thus improves the yield of product, stability and reliability.
Summary of the invention
Because the above-mentioned defect of prior art, after the object of the invention is to effectively to prevent TEOS board from maintaining, the particle of first product silicon chip is injured, thus improves the yield of product, stability and reliability.
For achieving the above object, the invention provides the method for the rear particle high jump of a kind of effective solution TEOS board maintenance, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, TEOS is passed into respectively to thick film branch line and film branch line, to the clean that thick film branch line and film branch line respectively carry out at least one times respectively, to discharge the crystallising small particles in film branch line and thick film branch line, two-way film branch line and thick film branch line are all effectively cleaned, and effectively solve because pipeline gas refluxes the second particle pollution problem caused.Technical scheme of the present invention is as follows:
A kind of method solving the rear particle high jump of TEOS board maintenance, described TEOS board includes inlet ductwork, film branch line, thick film branch line and processing chamber, described inlet ductwork is equipped with under meter, described film branch line and thick film branch line are equipped with spraying gun respectively, described film branch line and thick film branch line are communicated with the processing chamber of described TEOS board respectively, described method comprises: by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, TEOS is passed into respectively to described thick film branch line and film branch line, to the clean that described thick film branch line and film branch line respectively carry out at least one times respectively, to discharge the crystallising small particles in described film branch line and thick film branch line, wherein, when carrying out clean to described thick film branch line, deposit TEOS thick-film technique is selected to run false sheet, the TEOS passed into by described inlet ductwork, described thick film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber, when carrying out clean to described film branch line, deposit TEOS thin-film technique is selected to run false sheet, the TEOS passed into by described inlet ductwork, described film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber.
Preferably, described thick film branch line and film branch line are hocketed clean.
Preferably, first clean is carried out to described film branch line, then clean is carried out to described thick film branch line.
Preferably, first clean is carried out to described film branch line, then clean is carried out to described thick film branch line, then, again clean is carried out to described film branch line.
Preferably, when clean is carried out to described thick film branch line, open the spraying gun of the described under meter of described inlet ductwork, described thick film branch line, close the spraying gun of described film branch line, the TEOS passed into by described inlet ductwork, described thick film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber, to discharge the crystallising small particles in described thick film branch line.
Preferably, when clean is carried out to described film branch line, open the spraying gun of the described under meter of described inlet ductwork, described film branch line, close the spraying gun of described thick film branch line, the TEOS passed into by described inlet ductwork, described film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber, to discharge the crystallising small particles in described film branch line.
Preferably, when carrying out clean to described film branch line, select deposit TEOS thin-film technique to run false sheet, deposition time is 6 ~ 8sec; When carrying out clean to described thick film branch line, select deposit TEOS thick-film technique to run false sheet, deposition time is 5 ~ 7sec.
The object herein designed is, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, respectively TEOS is passed into thick film branch line and film branch line, to the clean that thick film branch line and film branch line respectively carry out at least one times respectively, to discharge the crystallising small particles in film branch line and thick film branch line, and complete by operating system is disposable, two-way film branch line and thick film branch line are all effectively cleaned, the second particle pollution problem that the backflow of pipeline gas causes can be avoided, the particle issues brought is maintained to eliminate board, thus the particle high jump problem solved after board maintenance, the deposition time of cleaning film branch line is 6 ~ 8sec, and the deposition time of clean thick film branch line is 5 ~ 7sec, with under the prerequisite ensureing cleaning effect, shortens the cleaning operation time, reduces the cost waste of deposit TEOS.
Preferably, when carrying out clean to described film branch line, the flow that passes into of TEOS is 0.1 ~ 2mgm, and when carrying out clean to described thick film branch line, the flow that passes into of TEOS is 10 ~ 20mgm.
The object herein designed is, the processing parameter of selected flow during the false sheet of selected race, can while the effective flush pipe road of guarantee, there is the phenomenon of depositing crystalline particle in the resistance place of mechanism such as bend, valve reducing pipeline, in case stop machine platform maintains the particle high jump problem brought, the cost waste and the consumption of time that cause when running false sheet can be reduced again simultaneously.
As can be seen from technique scheme, a kind of method solving the rear particle high jump of TEOS board maintenance of the present invention, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, TEOS is passed into respectively to thick film branch line and film branch line, to the clean that thick film branch line and film branch line respectively carry out at least one times respectively, to discharge the crystallising small particles in film branch line and thick film branch line, two-way film branch line and thick film branch line are all effectively cleaned, and the second particle that effectively solution causes because pipeline gas refluxes pollutes.
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, idiographic flow and generation, to understand object of the present invention, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is TEOS board film branch line and thick film branch line schematic diagram in prior art;
Fig. 2 is a kind of process flow diagram solving the method for the rear particle high jump of TEOS board maintenance of the present invention;
Fig. 3 is that in the present invention, deposit TEOS film flows to schematic diagram with the TEOS of cleaning film branch line;
Fig. 4 is that in the present invention, deposit TEOS thick film flows to schematic diagram with the TEOS of clean thick film branch line.
In figure, 1 is inlet ductwork, and 2 is under meter, and 3 is film branch line, and 4 is the spraying gun of film branch line, and 5 is processing chamber, and 6 is thick film branch line, and 7 is the spraying gun of thick film branch line.
Embodiment
Below in conjunction with accompanying drawing 2 ~ 4, the specific embodiment of the present invention is described in further detail.
It should be noted that, in the following embodiments, be described as false sheet to adopt the silicon chip of 6 inches of sizes; As Fig. 2, Fig. 2 is a kind of process flow diagram solving the method for the rear particle high jump of TEOS board maintenance of the present invention, which illustrate the method for the rear particle high jump of a kind of effective solution TEOS board maintenance, described TEOS board includes inlet ductwork 1, film branch line 3 and thick film branch line 6, described inlet ductwork 1 is equipped with under meter 2, described film branch line 3 and thick film branch line 6 are equipped with spraying gun respectively, and described film branch line 3 and thick film branch line 6 are communicated with the processing chamber 5 of described TEOS board respectively.
In the clean of embodiment, first clean is carried out to described film branch line 3, as the step S01 in Fig. 2, again clean is carried out to described thick film branch line 6, as the step S02 in Fig. 2, then, again clean is carried out, as the step S03 in Fig. 2 to described film branch line 3.
Refer to Fig. 4, Fig. 4 is that in the present invention, deposit TEOS thick film flows to schematic diagram with the TEOS of clean thick film branch line; As shown in Figure 4, when clean is carried out to described thick film branch line 6, open the spraying gun 7 of the described under meter 2 of described inlet ductwork 1, described thick film branch line, close the spraying gun 4 of described film branch line, the TEOS passed into by described inlet ductwork 1, described thick film branch line 6 is entered through the crossing of described thick film branch line 6 and film branch line 3, and discharged to described processing chamber 5, to discharge the crystallising small particles in described thick film branch line 6; When carrying out clean to described thick film branch line 6, deposition time is the flow that passes into of 5sec, TEOS is 10mgm.
Refer to Fig. 3, Fig. 3 is that in the present invention, deposit TEOS film flows to schematic diagram with the TEOS of cleaning film branch line; As shown in Figure 3, when clean is carried out to described film branch line 3, open the spraying gun 4 of the described under meter 2 of described inlet ductwork 1, described film branch line, close the spraying gun 7 of described thick film branch line, the TEOS passed into by described inlet ductwork 1, described film branch line 3 is entered through the crossing of described thick film branch line 6 and film branch line 3, and discharged to described processing chamber 5, to discharge the crystallising small particles in described film branch line 3; When carrying out clean to described film branch line 3, deposition time is the flow that passes into of 6sec, TEOS is 0.1mgm.
As can be seen from above-described embodiment, the method of particle high jump after the maintenance of a kind of effective solution TEOS board of the present invention, by the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, respectively TEOS is passed into thick film branch line 6 and film branch line 3, to the clean that thick film branch line 6 carries out once, film branch line 3 is carried out to the clean of twice, to discharge the crystallising small particles in film branch line and thick film branch line, two-way film branch line and thick film branch line are all effectively cleaned, and the second particle that effectively solution causes because pipeline gas refluxes pollutes.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification sheets of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. one kind solves the method for the rear particle high jump of TEOS board maintenance, described TEOS board includes inlet ductwork, film branch line, thick film branch line and processing chamber, described inlet ductwork is equipped with under meter, described film branch line and thick film branch line are equipped with spraying gun respectively, described film branch line and thick film branch line are communicated with the processing chamber of described TEOS board respectively, it is characterized in that, described method comprises:
By the processing method of deposit TEOS thick film and deposit TEOS film, to run the mode of false sheet, TEOS is passed into respectively to described thick film branch line and film branch line, to the clean that described thick film branch line and film branch line respectively carry out at least one times respectively, to discharge the crystallising small particles in described film branch line and thick film branch line, wherein, when carrying out clean to described thick film branch line, deposit TEOS thick-film technique is selected to run false sheet, the TEOS passed into by described inlet ductwork, described thick film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber, when carrying out clean to described film branch line, deposit TEOS thin-film technique is selected to run false sheet, the TEOS passed into by described inlet ductwork, described film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber.
2. the as claimed in claim 1 method solving particle high jump after the maintenance of TEOS board, is characterized in that, to hocket clean to described thick film branch line and film branch line.
3. the method solving the rear particle high jump of TEOS board maintenance as claimed in claim 1, is characterized in that, first carry out clean to described film branch line, then carry out clean to described thick film branch line.
4. the method solving the rear particle high jump of TEOS board maintenance as claimed in claim 1, it is characterized in that, first clean is carried out to described film branch line, then clean is carried out to described thick film branch line, then, again clean is carried out to described film branch line.
5. the method for particle high jump after the solution TEOS board maintenance as described in Claims 1 to 4 any one, it is characterized in that, when clean is carried out to described thick film branch line, open the spraying gun of the described under meter of described inlet ductwork, described thick film branch line, close the spraying gun of described film branch line, the TEOS passed into by described inlet ductwork, described thick film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber, to discharge the crystallising small particles in described thick film branch line.
6. the method for particle high jump after the solution TEOS board maintenance as described in Claims 1 to 4 any one, it is characterized in that, when clean is carried out to described film branch line, open the spraying gun of the described under meter of described inlet ductwork, described film branch line, close the spraying gun of described thick film branch line, the TEOS passed into by described inlet ductwork, described film branch line is entered through the crossing of described thick film branch line and film branch line, and discharged to described processing chamber, to discharge the crystallising small particles in described film branch line.
7. the method for particle high jump after the solution TEOS board maintenance as described in Claims 1 to 4 any one, it is characterized in that, when carrying out clean to described film branch line, select deposit TEOS thin-film technique to run false sheet, deposition time is 6 ~ 8sec; When carrying out clean to described thick film branch line, select deposit TEOS thick-film technique to run false sheet, deposition time is 5 ~ 7sec.
8. the method for particle high jump after the solution TEOS board maintenance as described in Claims 1 to 4 any one, it is characterized in that, when clean is carried out to described film branch line, the flow that passes into of TEOS is 0.1 ~ 2mgm, when carrying out clean to described thick film branch line, the flow that passes into of TEOS is 10 ~ 20mgm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102877041A (en) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | Film deposition method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102877041A (en) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | Film deposition method |
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