CN104022745A - Ultra-wideband high-power power amplifier device - Google Patents
Ultra-wideband high-power power amplifier device Download PDFInfo
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- CN104022745A CN104022745A CN201410243210.3A CN201410243210A CN104022745A CN 104022745 A CN104022745 A CN 104022745A CN 201410243210 A CN201410243210 A CN 201410243210A CN 104022745 A CN104022745 A CN 104022745A
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Abstract
The invention relates to a power amplifier device and discloses a novel ultra-wideband high-power power amplifier device, which has high isolation between channels and small occupied space. The ultra-wideband high-power power amplifier device comprises an MCU (Micro Control Unit) module, a time delay circuit, four input signal processing units and four transfer switch units, wherein the four input signal processing units are connected to the four transfer switch units through the time delay circuit; the four input signal processing units and the four transfer switch units are all connected to the MCU module. The ultra-wideband high-power power amplifier device is suitable for implementing power amplification within the ultra-wideband signal range.
Description
Technical field
The present invention relates to a kind of power discharging device, specifically the high-power power discharging device of a kind of ultrabroad band.
Background technology
The mode that realizes 30MHz-18GHZ ultrabroad band power amplifier in prior art is: by dividing frequency range, more synthetic through duplexer or multiplexer; But that duplexer and multiplexer cannot be realized frequency zero gap when synthetic is synthetic, realization can bring in use owing to lacking isolation and interfere with each other device is caused to damage reluctantly, and the power discharging device of realizing by which takes up room greatly.
Summary of the invention
Technical problem to be solved by this invention is: propose the high-power power discharging device of a kind of novel ultrabroad band, interchannel isolation is high, and it is little to take up room.
The present invention solves the problems of the technologies described above adopted technical scheme:
The high-power power discharging device of ultrabroad band, comprises MCU (microprocessor) module, time delay circuit, 4 input signal processing units, 4 diverter switch unit; Described 4 input signal processing units connect described 4 diverter switch unit by time delay circuit; Described 4 input signal processing units and 4 diverter switch unit all connect MCU module;
Wherein, each input signal processing unit includes coupler and connects successively with it band pass filter, power detector; And the coupler in each input signal processing unit is connected and is shared an input interface, and the coupler in described each input signal processing unit is also by load ground connection; Each diverter switch unit includes the first single-pole double-throw switch (SPDT), load, the second single-pole double-throw switch (SPDT); Described the first single-pole double-throw switch (SPDT) connects described the second single-pole double-throw switch (SPDT) by load; The output of the second single-pole double-throw switch (SPDT) in each diverter switch unit shares an output interface.
Concrete, the coupler in described each input signal processing unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively; Band pass filter in each input signal processing unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively; Power detector in each input signal processing unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively.
Concrete, the first single-pole double-throw switch (SPDT) in described each diverter switch unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively; The second single-pole double-throw switch (SPDT) in each diverter switch unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively.
The invention has the beneficial effects as follows: the bandwidth that the power discharging device of realization is supported, differential loss is little, and each interchannel has higher isolation, each device can be integrated in a module and share input, output and a power interface, has greatly saved and has taken up room.
Brief description of the drawings
Fig. 1 is the high-power power discharging device structural representation of the ultrabroad band in embodiment;
In figure, 1,2,3,4 is power detector, 5,6,7,8 is band pass filter, 9,10,11,12 is coupler, 13 is MCU module, and 14 is time delay circuit, and 15,16,17,18 is the first single-pole double-throw switch (SPDT), 27,28,29,30 is the second single-pole double-throw switch (SPDT), and 31,32,33,34,35,36,37,38 is load.
Embodiment
The present invention is intended to propose the high-power power discharging device of a kind of novel ultrabroad band, can in a module, solve 30MHz-18GHZ wide-band transmitter wideband composition problem, can realize full frequency band gapless synthetic, form a high-power power amplifier of ultra broadband, reduce and close road cost, reduce device simultaneously and take up room.
Below in conjunction with drawings and Examples, the solution of the present invention is further described:
As shown in Figure 1, the high-power power discharging device of ultrabroad band in this example, comprises MCU module, time delay circuit, 4 input signal processing units, 4 diverter switch unit; Described 4 input signal processing units connect described 4 diverter switch unit by time delay circuit; Described 4 input signal processing units and 4 diverter switch unit all connect MCU module;
Wherein, each input signal processing unit includes coupler and connects successively with it band pass filter, power detector; And the coupler in each input signal processing unit is connected and is shared an input interface, and the coupler in described each input signal processing unit is also by load ground connection; Each diverter switch unit includes the first single-pole double-throw switch (SPDT), load, the second single-pole double-throw switch (SPDT); Described the first single-pole double-throw switch (SPDT) connects described the second single-pole double-throw switch (SPDT) by load; The output of the second single-pole double-throw switch (SPDT) in each diverter switch unit shares an output interface.
On concrete enforcement, for the power discharging device that makes to design is supported the super wideband of 30MHz-18GHZ, this ultratvide frequency band is divided into DC-1GHz, 0.9-3GHz, these 4 frequency ranges of 2.9-6.1GHz, 6-18GHz, and select the corresponding device of supporting corresponding band respectively to combine, can realize optimize performance for making the device after combination, in the time of each parts selection, can follow following principle: in the time selecting coupler, can select to support that maximum power is the directional coupler of 1W; In the time of select tape bandpass filter, can select squareness factor as far as possible high; In the time selecting power detector, select fast as far as possible wave detector of reaction time; In the time selecting single-pole double-throw switch (SPDT), select power can bear 100W, differential loss≤1db, the switch of switch isolation degree >=40db; In the time selecting load, can select resistance is the load of 50 Ω; After selection completes, carrying out assembly according to upper Fig. 1 synthesizes.
Its operation principle is: in the time that radiofrequency signal is inputted, four directional couplers carry out radiofrequency signal sampling in real time, the forward port coupled signal of coupler is given the band pass filter of corresponding different frequency range, through radiofrequency power detector, radiofrequency signal is converted to direct current DC again, by direct current DC signal feedback to MCU, MCU changes, compares through AD, determine one of them ceiling voltage, at a TTL high level of corresponding delivery outlet output, this TTL high level is as the enable switch control signal of power amplifier below.Whole signal sampling-analysis-control procedure can produce certain time delay, therefore on radio-frequency channel, is necessary to add a delay circuit, to ensure that radiofrequency signal first identifies the time sequencing of controlling again.
The scope of protection of the presently claimed invention comprises but is not limited only to the content of above-described embodiment, and equivalent variations/replacement that those skilled in the art have done the solution of the present invention in the situation that not departing from Spirit Essence of the present invention based on foregoing description is all in protection range of the present invention.
Claims (3)
1. the high-power power discharging device of ultrabroad band, is characterized in that, comprises MCU module, time delay circuit, 4 input signal processing units, 4 diverter switch unit; Described 4 input signal processing units connect described 4 diverter switch unit by time delay circuit; Described 4 input signal processing units and 4 diverter switch unit all connect MCU module;
Wherein, each input signal processing unit includes coupler and connects successively with it band pass filter, power detector; And the coupler in each input signal processing unit is connected and is shared an input interface, and the coupler in described each input signal processing unit is also by load ground connection; Each diverter switch unit includes the first single-pole double-throw switch (SPDT), load, the second single-pole double-throw switch (SPDT); Described the first single-pole double-throw switch (SPDT) connects described the second single-pole double-throw switch (SPDT) by load; The output of the second single-pole double-throw switch (SPDT) in each diverter switch unit shares an output interface.
2. the high-power power discharging device of ultrabroad band as claimed in claim 1, is characterized in that, the coupler in described each input signal processing unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively; Band pass filter in each input signal processing unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively; Power detector in each input signal processing unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively.
3. the high-power power discharging device of ultrabroad band as claimed in claim 2, is characterized in that, the first single-pole double-throw switch (SPDT) in described each diverter switch unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively; The second single-pole double-throw switch (SPDT) in each diverter switch unit is the corresponding frequency range of supporting DC-1GHz, 0.9-3GHz, 2.9-6.1GHz, 6-18GHz respectively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410243210.3A CN104022745B (en) | 2014-06-03 | 2014-06-03 | ultra-wideband high-power power amplifier device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410243210.3A CN104022745B (en) | 2014-06-03 | 2014-06-03 | ultra-wideband high-power power amplifier device |
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| CN104022745A true CN104022745A (en) | 2014-09-03 |
| CN104022745B CN104022745B (en) | 2017-01-25 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1819453A (en) * | 2000-12-26 | 2006-08-16 | 松下电器产业株式会社 | High-frequency switch, high-frequency laminate, high- frequency radio, and high-frequency switching method |
| CN201374693Y (en) * | 2008-12-24 | 2009-12-30 | 鸿富锦精密工业（深圳）有限公司 | Wireless communication device |
| CN201699684U (en) * | 2010-05-31 | 2011-01-05 | 西安交通大学 | Frequency synthesizer of full-band multi-band orthogonal frequency division multiplexing ultra wideband radio frequency transceiver |
| CN102082578A (en) * | 2011-03-07 | 2011-06-01 | 四川九洲电器集团有限责任公司 | General ultra-wideband reception method |
| CN102969996A (en) * | 2012-11-15 | 2013-03-13 | 爱德森（厦门）电子有限公司 | Realization method of nonlinear ultrasonic test instrument analog amplifying circuit and realization device thereof |
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2014
- 2014-06-03 CN CN201410243210.3A patent/CN104022745B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819453A (en) * | 2000-12-26 | 2006-08-16 | 松下电器产业株式会社 | High-frequency switch, high-frequency laminate, high- frequency radio, and high-frequency switching method |
| CN201374693Y (en) * | 2008-12-24 | 2009-12-30 | 鸿富锦精密工业（深圳）有限公司 | Wireless communication device |
| CN201699684U (en) * | 2010-05-31 | 2011-01-05 | 西安交通大学 | Frequency synthesizer of full-band multi-band orthogonal frequency division multiplexing ultra wideband radio frequency transceiver |
| CN102082578A (en) * | 2011-03-07 | 2011-06-01 | 四川九洲电器集团有限责任公司 | General ultra-wideband reception method |
| CN102969996A (en) * | 2012-11-15 | 2013-03-13 | 爱德森（厦门）电子有限公司 | Realization method of nonlinear ultrasonic test instrument analog amplifying circuit and realization device thereof |
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| CN104022745B (en) | 2017-01-25 |
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