CN104022745B - ultra-wideband high-power power amplifier device - Google Patents
ultra-wideband high-power power amplifier device Download PDFInfo
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- CN104022745B CN104022745B CN201410243210.3A CN201410243210A CN104022745B CN 104022745 B CN104022745 B CN 104022745B CN 201410243210 A CN201410243210 A CN 201410243210A CN 104022745 B CN104022745 B CN 104022745B
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Abstract
The invention relates to a power amplifier device and discloses a novel ultra-wideband high-power power amplifier device, which has high isolation between channels and small occupied space. The ultra-wideband high-power power amplifier device comprises an MCU (Micro Control Unit) module, a time delay circuit, four input signal processing units and four transfer switch units, wherein the four input signal processing units are connected to the four transfer switch units through the time delay circuit; the four input signal processing units and the four transfer switch units are all connected to the MCU module. The ultra-wideband high-power power amplifier device is suitable for implementing power amplification within the ultra-wideband signal range.
Description
Technical field
The present invention relates to a kind of power discharging device, specifically a kind of ultrabroad band High-power amplifier device.
Background technology
The mode realizing 30mhz-18ghz ultrabroad band power amplifier in prior art is: by dividing frequency range, then through duplex
Device or multiplexer synthesis；But duplexer cannot realize the synthesis of frequency zero clearance with multiplexer when synthesizing, inadequate realization can carry
To interfere with each other due to lacking isolation when using and device is caused damage, and the power discharging device realized by this way accounts for
Big with space.
Content of the invention
The technical problem to be solved is: proposes a kind of new ultrabroad band High-power amplifier device, passage
Between isolation high, and it is little to take up room.
The present invention solves above-mentioned technical problem and be the technical scheme is that
Ultrabroad band High-power amplifier device, is processed including mcu (microprocessor) module, time delay circuit, 4 input signals
Unit, 4 switching switch elements；It is single that described 4 input signal processing units connect described 4 switching switches by time delay circuit
Unit；Described 4 input signal processing units and 4 switching switch elements are all connected with mcu module；
Wherein, each input signal processing unit all includes bonder and the band filter being sequentially connected in series therewith, work(
Rate cymoscope；And the bonder in each input signal processing unit connects and shares an input interface, each input described
Bonder in signal processing unit is also by carrying ground；Each switching switch element all includes the first single-pole double throw and opens
Pass, load, the second single-pole double-throw switch (SPDT)；Described first single-pole double-throw switch (SPDT) connects described second single-pole double throw by load and opens
Close；The outfan of the second single-pole double-throw switch (SPDT) in each switching switch element shares an output interface.
Specifically, the bonder in each input signal processing unit described is corresponding respectively supports dc-1ghz, 0.9-
The frequency range of 3ghz, 2.9-6.1ghz, 6-18ghz；Band filter in each input signal processing unit is corresponding respectively to be supported
The frequency range of dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz；Power detector in each input signal processing unit
The corresponding frequency range supporting dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz respectively.
Specifically, first single-pole double-throw switch (SPDT) in each switching switch element described respectively corresponding support dc-1ghz,
The frequency range of 0.9-3ghz, 2.9-6.1ghz, 6-18ghz；The second single-pole double-throw switch (SPDT) in each switching switch element is right respectively
The frequency range of dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz should be supported.
The invention has the beneficial effects as follows: the bandwidth that the power discharging device of realization is supported, differential loss is little, and each interchannel has higher
Isolation, can by integrated for each device on one module share one input, output and power interface, greatly save
Take up room.
Brief description
Fig. 1 is the ultrabroad band High-power amplifier device architecture schematic diagram in embodiment；
In figure, 1,2,3,4 is power detector, and 5,6,7,8 is band filter, and 9,10,11,12 is bonder, and 13 are
Mcu module, 14 is time delay circuit, and 15,16,17,18 is the first single-pole double-throw switch (SPDT), and 27,28,29,30 is the second single-pole double throw
Switch, 31,32,33,34,35,36,37,38 is load.
Specific embodiment
It is contemplated that proposing a kind of new ultrabroad band High-power amplifier device, can solve on one module
30mhz-18ghz wide-band transmitter wideband composition problem, achievable full frequency band gapless synthesis, the big work(of one ultra broadband of formation
Rate power amplifier, reduces combining cost, reduces device simultaneously and takes up room.
Below in conjunction with the accompanying drawings and embodiment the solution of the present invention is further described:
As shown in figure 1, the ultrabroad band High-power amplifier device in this example, including mcu module, time delay circuit, 4 inputs
Signal processing unit, 4 switching switch elements；Described 4 input signal processing units connect described 4 by time delay circuit and cut
Change switch element；Described 4 input signal processing units and 4 switching switch elements are all connected with mcu module；
Wherein, each input signal processing unit all includes bonder and the band filter being sequentially connected in series therewith, work(
Rate cymoscope；And the bonder in each input signal processing unit connects and shares an input interface, each input described
Bonder in signal processing unit is also by carrying ground；Each switching switch element all includes the first single-pole double throw and opens
Pass, load, the second single-pole double-throw switch (SPDT)；Described first single-pole double-throw switch (SPDT) connects described second single-pole double throw by load and opens
Close；The outfan of the second single-pole double-throw switch (SPDT) in each switching switch element shares an output interface.
On being embodied as, the power discharging device for making to design supports the ultra-wideband of 30mhz-18ghz, by this ultra-wide
Frequency range is divided into this 4 frequency ranges of dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz, and selects to correspond to support respectively accordingly
The device of frequency range is combined, and for making the device after combination be capable of optimization performance, can follow in each parts selection
Following principle: when selecting bonder, the directional coupler of supporting peak power be 1w may be selected；Selecting band filter
When, optional squareness factor is tried one's best high；When selecting power detector, selective response time as fast as possible cymoscope；In choosing
When selecting single-pole double-throw switch (SPDT), select power can bear 100w, differential loss≤1db, the switch of switch isolation degree >=40db；Selecting
During load, optional resistance is the load of 50 ω；Carry out assembly synthesis according to figure 1 above after the completion of selection.
Its operation principle is: when radiofrequency signal inputs, four directional couplers carry out radiofrequency signal sampling in real time, coupling
The positive port coupled signal of device gives the band filter of corresponding different frequency range, then through radiofrequency power detector by radiofrequency signal
Be converted to direct current dc, direct current dc signal fed back to mcu, mcu changes, compares through ad, determines one of ceiling voltage,
Export a ttl high level in corresponding delivery outlet, this ttl high level is as the enable on-off control of power amplifier below
Signal.Whole signal sampling-analysis-control process can produce certain time delay, therefore is necessary to add one on radio-frequency channel
Individual delay circuit, the time sequencing being controlled again with ensureing radiofrequency signal first to identify.
The scope of protection of the presently claimed invention comprises but is not limited only to the content of above-described embodiment, those skilled in the art
Based on foregoing description in the case of without departing from spirit of the invention to the equivalent variations/replacement done by the solution of the present invention
All in the scope of the present invention.
Claims (3)
1. ultrabroad band High-power amplifier device is it is characterised in that include mcu module, time delay circuit, 4 input signals process
Unit, 4 switching switch elements；It is single that described 4 input signal processing units connect described 4 switching switches by time delay circuit
Unit；Described 4 input signal processing units and 4 switching switch elements are all connected with mcu module；
Wherein, each input signal processing unit all includes bonder and the band filter being sequentially connected in series therewith, power inspection
Ripple device；And the bonder in each input signal processing unit connects and shares an input interface, each input signal described
Bonder in processing unit is also by carrying ground；Each switching switch element all includes the first single-pole double-throw switch (SPDT), bears
Load, the second single-pole double-throw switch (SPDT)；Described first single-pole double-throw switch (SPDT) passes through load and connects described second single-pole double-throw switch (SPDT)；Each
The outfan of the second single-pole double-throw switch (SPDT) in switching switch element shares an output interface.
2. ultrabroad band High-power amplifier device as claimed in claim 1 is it is characterised in that each input signal described is processed
Bonder in the unit corresponding frequency range supporting dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz respectively；Each input
Band filter in the signal processing unit corresponding frequency supporting dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz respectively
Section；Power detector in each input signal processing unit respectively corresponding support dc-1ghz, 0.9-3ghz, 2.9-6.1ghz,
The frequency range of 6-18ghz.
3. ultrabroad band High-power amplifier device as claimed in claim 2 is it is characterised in that described each switches switch element
In the first single-pole double-throw switch (SPDT) corresponding frequency range supporting dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-18ghz respectively；Respectively
The second single-pole double-throw switch (SPDT) in individual switching switch element is corresponding respectively to support dc-1ghz, 0.9-3ghz, 2.9-6.1ghz, 6-
The frequency range of 18ghz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243210.3A CN104022745B (en) | 2014-06-03 | 2014-06-03 | ultra-wideband high-power power amplifier device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243210.3A CN104022745B (en) | 2014-06-03 | 2014-06-03 | ultra-wideband high-power power amplifier device |
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| CN104022745A CN104022745A (en) | 2014-09-03 |
| CN104022745B true CN104022745B (en) | 2017-01-25 |
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| CN1819453A (en) * | 2000-12-26 | 2006-08-16 | 松下电器产业株式会社 | High-frequency switch, high-frequency laminate, high- frequency radio, and high-frequency switching method |
| CN201374693Y (en) * | 2008-12-24 | 2009-12-30 | 鸿富锦精密工业（深圳）有限公司 | Wireless communication device |
| CN201699684U (en) * | 2010-05-31 | 2011-01-05 | 西安交通大学 | Frequency synthesizer of full-band multi-band orthogonal frequency division multiplexing ultra wideband radio frequency transceiver |
| CN102082578A (en) * | 2011-03-07 | 2011-06-01 | 四川九洲电器集团有限责任公司 | General ultra-wideband reception method |
| CN102969996A (en) * | 2012-11-15 | 2013-03-13 | 爱德森（厦门）电子有限公司 | Realization method of nonlinear ultrasonic test instrument analog amplifying circuit and realization device thereof |
-
2014
- 2014-06-03 CN CN201410243210.3A patent/CN104022745B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819453A (en) * | 2000-12-26 | 2006-08-16 | 松下电器产业株式会社 | High-frequency switch, high-frequency laminate, high- frequency radio, and high-frequency switching method |
| CN201374693Y (en) * | 2008-12-24 | 2009-12-30 | 鸿富锦精密工业（深圳）有限公司 | Wireless communication device |
| CN201699684U (en) * | 2010-05-31 | 2011-01-05 | 西安交通大学 | Frequency synthesizer of full-band multi-band orthogonal frequency division multiplexing ultra wideband radio frequency transceiver |
| CN102082578A (en) * | 2011-03-07 | 2011-06-01 | 四川九洲电器集团有限责任公司 | General ultra-wideband reception method |
| CN102969996A (en) * | 2012-11-15 | 2013-03-13 | 爱德森（厦门）电子有限公司 | Realization method of nonlinear ultrasonic test instrument analog amplifying circuit and realization device thereof |
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| CN104022745A (en) | 2014-09-03 |
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