CN104022647A - Self-switching voltage stabilizing circuit of power supply - Google Patents
Self-switching voltage stabilizing circuit of power supply Download PDFInfo
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- CN104022647A CN104022647A CN201410290540.8A CN201410290540A CN104022647A CN 104022647 A CN104022647 A CN 104022647A CN 201410290540 A CN201410290540 A CN 201410290540A CN 104022647 A CN104022647 A CN 104022647A
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Abstract
The invention relates to a self-switching voltage stabilizing circuit of a power supply. The self-switching voltage stabilizing circuit comprises a voltage stabilizing unit part and a power supply switching unit, wherein an external power supply voltage input end is connected with the voltage stabilizing unit part, the voltage stabilizing unit part is connected with a power supply voltage output end through the power supply switching unit part, and the power supply switching unit part is also connected with a backup power supply positive input end. The self-switching voltage stabilizing circuit has advantage of being designed by adopting split elements and devices, so that the design is relatively flexible, an appropriate MOSFET (metal oxide semiconductor field effect transistor) is selected, a voltage stabilizing circuit with high input voltage can be designed, for example a voltage stabilizing circuit with the input voltage of 8V to 60V can be designed; meanwhile, the MOSFET is relatively high in efficiency, and the voltage stabilizing circuit with relatively large output current under the same size can be designed.
Description
Technical field
The present invention relates to a kind of voltage stabilizing circuit of supporting that outside direct current and backup battery supply are automatically switched.
Background technology
In the time of Low Power Instrument Design, often use the back-up source after 3.6V Li-SOCL2 disposable lithium cell has a power failure as instrument to power to low consumption circuits such as RTC, MCU or LCD.In the time of circuit design, need to design the power supply supply of a commutation circuit for outside direct current supply power failure or after powering on selects, conventional way as shown in Figure 1, adopt low pressure difference linear voltage regulator U1 and diode switching mode, this commutation circuit adopts the mode of diode-isolated, must ensure that external dc power voltage is greater than cell voltage guarantee and correctly switches.
In the time of voltage regulation unit output 5V, circuit can well ensure to switch accurately.But along with integrated circuit adopts more low-power consumption technique more cheaply, the maximum operating voltage of increasing chip is limited in 3.6V, require voltage regulation unit to export not higher than 3.6V, on the one hand Li-SOCL2 disposable lithium cell is in the situation of full capacity in addition, and its voltage unloaded or low year time tends to be slightly higher than 3.6V.If still adopt the mode of diode-isolated, its modified model is as Fig. 2, must on cell circuit, go here and there more diode.Obviously can cause so larger diode drop, the utilance of battery capacity further declines.In addition, adopt diode-isolated, in the time that load significantly changes, the tube voltage drop of diode also can vary widely, and can reach 0.3～0.7V left and right, and two diodes are in the time that load current is larger, occur that on powered battery loop, pressure drop is excessive, the phenomenon that output voltage is too low.Obviously in the time that external dc power is powered, if design coupling is 3.6V to the voltage of integrated circuit when as 1mA load, in the time that load instantaneous variation arrives 50mA, now outside supply voltage is even lower because tube voltage drop may become 3.2V, now battery may produce the loss of hundreds of uA, and long this battery life will be lower than expected design.
Sum up the drawback of diode-isolated:
1), due to diode tube pressuring drop, battery utilizes capacity to diminish;
2) diode is in the time that load current changes, and its tube voltage drop variation causes output voltage shakiness, and underloading voltage is excessive, heavily loaded brownout;
3) need to sacrifice battery can utilize battery capacity to meet the switching needs of 3V system.
Summary of the invention
The technical problem to be solved in the present invention is a low cost stabilized voltage power supply of design, and the automatic switchover that solves instrument backup battery and outside direct-current input power supplying.
In order to solve the problems of the technologies described above, technical scheme of the present invention is to provide the adaptive switched voltage stabilizing circuit of a kind of power supply, comprise voltage regulation unit part and electrical source exchange cell mesh, outer power voltage input access voltage regulation unit part, voltage regulation unit part connects supply voltage output via electrical source exchange cell mesh, meanwhile, electrical source exchange cell mesh also connects back-up source electrode input end, it is characterized in that:
Voltage regulation unit part comprises the first resistance, the one NMOS pipe, the second resistance, the first electric capacity, the 2nd NMOS pipe, the 3rd resistance, the 4th resistance and a PNP triode, outer power voltage input connects the 2nd NMOS pipe drain electrode via the first resistance, the first resistance is connected across between a NMOS pipe drain electrode and grid simultaneously, the one NMOS pipe drain electrode also connects outer power voltage input, the one NMOS pipe source electrode is connected with the 2nd NMOS grid through the second resistance and the first electric capacity in parallel, the 2nd NMOS tube grid is through the 3rd grounding through resistance, the 2nd NMOS pipe source electrode is through the 4th grounding through resistance, the 2nd NMOS pipe source electrode connects a PNP triode emitter-base bandgap grading simultaneously, the one PNP transistor base and grounded collector,
Electrical source exchange unit portion comprises a PMOS pipe, the 3rd PMOS pipe, the 2nd PMOS pipe, the first diode, the second voltage-stabiliser tube and the 5th resistance, the one NMOS pipe source electrode drains with a PMOS pipe simultaneously, the 3rd gate pmos utmost point and the second gate pmos are extremely connected, the first gate pmos utmost point is through the 5th grounding through resistance, be connected with the first diode cathode simultaneously, the first diode anode is connected with the 3rd PMOS pipe drain electrode and the drain electrode of the 2nd PMOS pipe, the second voltage-stabiliser tube negative electrode connects a PMOS pipe drain electrode, the second voltage-stabiliser tube anode connects the first gate pmos utmost point, back-up source minus earth, back-up source electrode input end is connected with the 2nd PMOS pipe source electrode, the 2nd PMOS pipe drain electrode is connected with the 3rd PMOS pipe drain electrode, the 3rd PMOS pipe source electrode is connected with supply voltage output after joining with a PMOS pipe source electrode.
Preferably, described voltage regulation unit part also comprises the first voltage-stabiliser tube, and a described NMOS pipe source electrode is connected with the first voltage-stabiliser tube negative electrode, and the first voltage-stabiliser tube anode is connected with described the 2nd NMOS grid through the second resistance and first electric capacity of described parallel connection.
Preferably, a described NMOS pipe and described the 2nd NMOS manage or select identical model or adopt two NMOS multiple tubes.
Advantage of the present invention is to adopt discrete component designing voltage regulator circuit, makes design more flexible, selects suitable MOSFET, can design the voltage stabilizing circuit of high input voltage, as the voltage stabilizing of 8～60V input voltage; MOSFET has higher efficiency simultaneously, and equal volume can design the voltage stabilizing circuit of larger output current.
Use a NMOS pipe and the 2nd NMOS pipe to build voltage stabilizing circuit, because it selects identical model, or can adopt two NMOS multiple tubes, its response to temperature is consistent, realizes the temperature-compensating to voltage stabilizing main switch the one NMOS pipe.
Form commutation circuit by a PMOS pipe, the 2nd PMOS pipe and the 3rd PMOS pipe, because the conduction voltage drop of PMOS pipe is lower than diode, so there is higher switching efficiency.When the outside input direct-current voltage stabilizing output voltage situation more lower slightly than cell voltage, the amplitude of engineering design is at the half VTO/2 of the grid threshold voltage of PMOS, conventionally in 0.25V left and right simultaneously.
Brief description of the drawings
Fig. 1 is diode-isolated voltage stabilizing circuit figure;
Fig. 2 is modified model diode-isolated circuit diagram;
Fig. 3 is a kind of voltage stabilizing circuit circuit diagram with the adaptive switched function of power supply provided by the invention;
Fig. 4 is the exemplary plot of N-MOSFET grid threshold voltage temperature characterisitic;
Fig. 5 is the application drawing that uses principle of the invention design.
Embodiment
For the present invention is become apparent, hereby with preferred embodiment, and coordinate accompanying drawing to be described in detail below.
In conjunction with Fig. 3 and Fig. 5 application note, the adaptive switched voltage stabilizing circuit of a kind of power supply provided by the invention is made up of voltage stabilizing circuit unit and switch unit.In simulation example, be external dc power input from the voltage DC INPUT of outer power voltage input Vin_DC input, Rsoure is for changing the direct voltage size of external dc power input unit, the direct voltage of the exportable 0～60V of this power subsystem.SW1 is switch, for the switch of Simulation Control external dc power.Rload1 and Rload2 are artificial circuit simulation underloading and heavily loaded load, and SWload is the diverter switch of two kinds of loads.
Outside direct current input connects a NMOS pipe Q1 drain electrode through SW1, the first resistance R 1 is connected across between a NMOS pipe Q1 drain-gate utmost point, the one NMOS pipe Q1 grid connects the 2nd NMOS pipe Q2 drain electrode, the one NMOS pipe Q1 source electrode is the output of voltage stabilizing part, voltage stabilizing part output termination the first voltage-stabiliser tube D1 negative electrode, the first voltage-stabiliser tube D1 anode is linked the 2nd NMOS pipe Q2 grid through the second resistance R 2, the 2nd NMOS pipe Q2 grid is again through the 3rd resistance R 3 ground connection, the first capacitor C 1 at the second resistance R 2 two ends, the 2nd NMOS pipe Q2 source electrode is through the 4th resistance R 4 ground connection, the 2nd NMOS pipe Q2 source electrode connects a PNP triode Q3 emitter simultaneously, the one PNP triode Q3 collector electrode and base earth.
The output of voltage stabilizing part, the i.e. source electrode of a NMOS pipe Q1, drain electrode with a PMOS pipe Q4, the grid of the 3rd PMOS pipe Q5 and the 2nd PMOS pipe Q6 is connected, the 3rd PMOS pipe Q5 drain electrode is connected with the 2nd PMOS pipe Q6 drain electrode, and connect the first diode D3 anode, the first diode D3 negative electrode connects a PMOS pipe Q4 grid, the second voltage-stabiliser tube D2 anode connects a PMOS pipe Q4 grid, the second voltage-stabiliser tube D2 negative electrode connects the source electrode of a PMOS pipe Q4, the one PMOS pipe Q4 grid is through the 5th resistance R 5 ground connection, the 2nd PMOS pipe Q6 source electrode connects back-up source (being lithium battery in the present embodiment) electrode input end Battery positive pole, the one PMOS pipe Q4 is connected with the source electrode of the 3rd PMOS pipe Q5, its tie point is the supply voltage output end vo ut of switching part unit.
The switching component that direct current regulation circuit uses a NMOS pipe Q1N-MOSFET pipe to make voltage stabilizing circuit is realized, and gives a NMOS pipe Q1 gate charges by the first resistance R 1 input DC power, makes a NMOS pipe Q1 grid voltage increase.Open-minded in the time that Vgs is greater than grid threshold voltage, otherwise close, Vs_Q1=Vg_Q1-Vgs_Q1, a NMOS pipe Q1 source voltage is followed grid voltage, progressively raises.In order to make a NMOS pipe Q1 source voltage be stabilized in required voltage, between a NMOS pipe Q1 drain electrode and grid, set up Voltage Feedback, the operating state of the 2nd NMOS pipe Q2 grid sampling the one NMOS pipe Q1 source voltage control the 2nd NMOS pipe Q2, in the time that a NMOS pipe Q1 source voltage arrives design voltage, the 2nd NMOS pipe Q2 starts conducting, the one NMOS pipe Q1 grid voltage drags down, the one NMOS pipe Q1 starts to disconnect, the one NMOS pipe Q1 source voltage declines, in the time that a NMOS pipe Q1 source voltage drops under design voltage, the 2nd NMOS pipe Q2 starts to disconnect, the one NMOS pipe Q1 grid voltage rises again, the one NMOS pipe Q1 source voltage gos up.
Here the 2nd NMOS pipe Q2 uses with the NMOS of NMOS pipe Q1 identical characteristics and manages, and such the 2nd NMOS pipe Q2 can be that the first NMOS pipe Q1 grid threshold voltage does temperature-compensating.Its compensation principle describe as: the grid threshold voltage temperature characterisitic that Fig. 4 is a common N-MOSFET2N7002, known its is linear relationship VTO=-kt+b, VTO is grid threshold voltage, t is temperature, k, t is coefficient, grid threshold voltage varies with temperature and closes is Δ VTO=-k* Δ t, the grid threshold voltage Yin Wendu of a NMOS pipe Q1 raises while reduction, Vs_Q1 voltage raises with temperature rise, also Yin Wendu rising reduction of the grid threshold voltage of the 2nd NMOS pipe Q2 simultaneously, dragging down a NMOS pipe Q1 grid voltage declines a NMOS pipe Q1 source voltage, otherwise temperature reduces in like manner.
In feedback loop, sample mode is line sampling, and in order to make voltage stabilizing circuit have low voltage difference characteristic, we select the N-MOSFET of low grid threshold voltage, because this threshold voltage is less, electric resistance partial pressure sampled voltage is smaller.Consider the discrete type of device, sampled voltage is unsuitable too small, therefore people is for raising sampled voltage the 2nd NMOS pipe Q2 grid voltage, arrive ground at source series one reference voltage of the 2nd NMOS pipe Q2, here use PNP triode base to penetrate pressure drop as benchmark, the 4th resistance R 4 provides current bypass to triode.The first voltage-stabiliser tube D1 can accelerate voltage stabilizing initiating process, ensure in the time that a NMOS manages Q1 source voltage lower than VZ1, the 2nd NMOS pipe Q2 can not move, adding of the first voltage-stabiliser tube D1 simultaneously, can make the second resistance R 2 and the 3rd resistance R 3 select approaching resistance, make dividing potential drop ratio have better temperature characterisitic.If make circuit become more succinct, can omit the first voltage-stabiliser tube D1 direct short-circuit here, then adjust the resistance of the second resistance R 2 and the 3rd resistance R 3.The first capacitor C 1 is feedback compensation electric capacity.
Three P-MOSFET pipes of power supply automatic switchover circuit are realized.When external dc power has electricity, and when circuit output end of pressure-stabilizing (a NMOS pipe Q1 source electrode) voltage is greater than the difference of cell voltage and the 2nd PMOS pipe Q6 grid threshold voltage, the 2nd PMOS pipe Q6 disconnects, the 2nd PMOS pipe Q6 drain voltage can not given a PMOS pipe Q4 grid voltage charging through the first diode D3 diode, the one PMOS pipe Q4 grid voltage is because of the 5th resistance R 5 ground connection, between the one PMOS pipe Q4 grid source, voltage magnitude must be greater than the grid threshold voltage of a PMOS pipe Q4, PMOS pipe Q4 conducting, there is the one PMOS pipe Q4 conducting powering load electric in the situation that at external dc power, and battery backup power supply because of the 2nd PMOS pipe Q6 disconnects not can powering load, once external dc power power down, a NMOS pipe Q1 source voltage starts to decline.Before a PMOS pipe Q4 does not disconnect, the 3rd PMOS pipe Q5 source voltage is not less than the 3rd PMOS pipe Q5 grid voltage all the time, the 3rd PMOS pipe Q5 remains open state, now battery backup power supply is by body diode and the load isolation of the 3rd PMOS pipe Q5, and load voltage can not produce battery consumption before being greater than cell voltage.Along with a PMOS pipe Q4 grid voltage progressively rises, the one PMOS pipe Q4 source voltage progressively declines because of load consumption, because less than circuit minimum load when the design of the resistance of the 5th resistance R 5, therefore the tube voltage drop of the first diode D3 is less than the tube voltage drop of the 3rd PMOS pipe Q5 body diode, therefore when load voltage is depleted to lower than cell voltage, when cell voltage is managed Q5 body diode powering load by the 3rd PMOS, load voltage is less than a PMOS pipe Q4 grid voltage certainly, therefore ensure that a PMOS pipe Q4 disconnects when powered battery, load supplying forwards battery backup Power supply completely to, when outside direct current supply recovers, the 2nd PMOS pipe Q6 grid voltage rises, when the 2nd PMOS pipe Q6 reaches disconnection condition, the 2nd PMOS pipe Q6 disconnects, the 3rd PMOS pipe Q5 also disconnects, and a PMOS pipe Q4 grid is without charging current, and the 5th resistance R 5 ground connection, the one PMOS pipe Q4 conducting, load switches to external power source.
Claims (3)
1. the voltage stabilizing circuit that power supply is adaptive switched, comprise voltage regulation unit part and electrical source exchange cell mesh, outer power voltage input (Vin_DC) access voltage regulation unit part, voltage regulation unit part connects supply voltage output (Vout) via electrical source exchange cell mesh, simultaneously, electrical source exchange cell mesh also connects back-up source electrode input end (Battery), it is characterized in that:
Voltage regulation unit part comprises the first resistance (R1), the one NMOS pipe (Q1), the first voltage-stabiliser tube (D1), the second resistance (R2), the 2nd NMOS pipe (Q2), the 3rd resistance (R3), the 4th resistance (R4) and a PNP triode (Q3), outer power voltage input (Vin_DC) connects the 2nd NMOS pipe (Q2) drain electrode via the first resistance (R1), the first resistance (R1) is connected across between NMOS pipe (Q1) drain electrode and grid simultaneously, the one NMOS pipe (Q1) drain electrode also connects outer power voltage input (Vin_DC), the one NMOS pipe (Q1) source electrode is connected with the 2nd NMOS (Q2) grid through the second resistance (R2) and the first electric capacity (C1) in parallel, the 2nd NMOS pipe (Q2) grid is through the 3rd resistance (R3) ground connection, the 2nd NMOS pipe (Q2) source electrode is through the 4th resistance (R4) ground connection, the 2nd NMOS pipe (Q2) source electrode connects PNP triode (Q3) emitter-base bandgap grading simultaneously, the one PNP triode (Q3) base stage and grounded collector,
Electrical source exchange unit portion comprises a PMOS pipe (Q4), the 3rd PMOS pipe (Q5), the 2nd PMOS pipe (Q6), the first diode (D3), the second voltage-stabiliser tube (D2) and the 5th resistance (R5), the one NMOS pipe (Q1) source electrode drains with a PMOS pipe (Q4) simultaneously, the 3rd PMOS pipe (Q5) grid and the 2nd PMOS pipe (Q6) grid are connected, the one PMOS pipe (Q4) grid is through the 5th resistance (R5) ground connection, be connected with the first diode (D3) negative electrode simultaneously, the first diode (D3) anode manages (Q5) drain electrode with the 3rd PMOS and the 2nd PMOS pipe (Q6) drain electrode is connected, the second voltage-stabiliser tube (D2) negative electrode connects PMOS pipe (Q4) drain electrode, the second voltage-stabiliser tube (D2) anode connects PMOS pipe (Q4) grid, back-up source minus earth, back-up source electrode input end (Battery) is managed (Q6) source electrode with the 2nd PMOS and is connected, the 2nd PMOS pipe (Q6) drain electrode is connected with the 3rd PMOS pipe (Q5) drain electrode, the 3rd PMOS pipe (Q5) source electrode is managed after (Q4) source electrode joins and is connected with supply voltage output (Vout) with a PMOS.
2. the adaptive switched voltage stabilizing circuit of a kind of power supply as claimed in claim 1, it is characterized in that, described voltage regulation unit part also comprises the first voltage-stabiliser tube (D1), described NMOS pipe (Q1) source electrode is connected with the first voltage-stabiliser tube (D1) negative electrode, and the first voltage-stabiliser tube (D1) anode is connected with described the 2nd NMOS (Q2) grid through the second resistance (R2) and first electric capacity (C1) of described parallel connection.
3. the adaptive switched voltage stabilizing circuit of a kind of power supply as claimed in claim 1, is characterized in that, a described NMOS pipe (Q1) and described the 2nd NMOS manage (Q2) or select identical model or adopt two NMOS multiple tubes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410290540.8A CN104022647A (en) | 2014-06-25 | 2014-06-25 | Self-switching voltage stabilizing circuit of power supply |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410290540.8A CN104022647A (en) | 2014-06-25 | 2014-06-25 | Self-switching voltage stabilizing circuit of power supply |
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| CN104022647A true CN104022647A (en) | 2014-09-03 |
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| CN201410290540.8A Pending CN104022647A (en) | 2014-06-25 | 2014-06-25 | Self-switching voltage stabilizing circuit of power supply |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104467082A (en) * | 2014-11-24 | 2015-03-25 | 成都贝发信息技术有限公司 | Power source circuit based on production management system |
| CN104467083A (en) * | 2014-11-24 | 2015-03-25 | 成都贝发信息技术有限公司 | Voltage-stabilized power circuit applicable to quality management system |
| CN104467081A (en) * | 2014-11-24 | 2015-03-25 | 成都贝发信息技术有限公司 | Power supply circuit based on quality control system |
| CN106787130A (en) * | 2016-12-20 | 2017-05-31 | 深圳市元征科技股份有限公司 | A kind of power supply switch circuit and terminal |
| CN109245287A (en) * | 2018-10-29 | 2019-01-18 | 宁波耀泰电器有限公司 | A kind of dual power supply automatic switch-over circuit |
| CN109831020A (en) * | 2019-02-20 | 2019-05-31 | 广州奥格智能科技有限公司 | A kind of ultra-low loss two-way power supply switching anti-back flow circuit |
| WO2020034447A1 (en) * | 2018-08-14 | 2020-02-20 | 广州奥格智能科技有限公司 | Ultra-low loss dual power switching circuit having anti-backflow function |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467082A (en) * | 2014-11-24 | 2015-03-25 | 成都贝发信息技术有限公司 | Power source circuit based on production management system |
| CN104467083A (en) * | 2014-11-24 | 2015-03-25 | 成都贝发信息技术有限公司 | Voltage-stabilized power circuit applicable to quality management system |
| CN104467081A (en) * | 2014-11-24 | 2015-03-25 | 成都贝发信息技术有限公司 | Power supply circuit based on quality control system |
| CN106787130A (en) * | 2016-12-20 | 2017-05-31 | 深圳市元征科技股份有限公司 | A kind of power supply switch circuit and terminal |
| CN106787130B (en) * | 2016-12-20 | 2019-08-02 | 深圳市元征科技股份有限公司 | A kind of power supply switch circuit and terminal |
| WO2020034447A1 (en) * | 2018-08-14 | 2020-02-20 | 广州奥格智能科技有限公司 | Ultra-low loss dual power switching circuit having anti-backflow function |
| CN109245287A (en) * | 2018-10-29 | 2019-01-18 | 宁波耀泰电器有限公司 | A kind of dual power supply automatic switch-over circuit |
| CN109831020A (en) * | 2019-02-20 | 2019-05-31 | 广州奥格智能科技有限公司 | A kind of ultra-low loss two-way power supply switching anti-back flow circuit |
| CN109831020B (en) * | 2019-02-20 | 2024-05-24 | 奥格科技股份有限公司 | Reverse flow preventing circuit for ultralow-loss two-path power supply switching |
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Application publication date: 20140903 |